WO2006125571A1 - Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung - Google Patents
Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung Download PDFInfo
- Publication number
- WO2006125571A1 WO2006125571A1 PCT/EP2006/004783 EP2006004783W WO2006125571A1 WO 2006125571 A1 WO2006125571 A1 WO 2006125571A1 EP 2006004783 W EP2006004783 W EP 2006004783W WO 2006125571 A1 WO2006125571 A1 WO 2006125571A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solder
- layer
- soldering
- ubm pad
- ubm
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 222
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 285
- 238000006243 chemical reaction Methods 0.000 claims abstract description 43
- 230000001627 detrimental effect Effects 0.000 claims abstract description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 88
- 238000005476 soldering Methods 0.000 claims description 58
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 54
- 239000010949 copper Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 9
- 238000003746 solid phase reaction Methods 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 231
- 238000001465 metallisation Methods 0.000 description 24
- 239000011135 tin Substances 0.000 description 23
- 239000010936 titanium Substances 0.000 description 15
- 239000007791 liquid phase Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 238000009736 wetting Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 229910007637 SnAg Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910008433 SnCU Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000003878 thermal aging Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- RSIWALKZYXPAGW-NSHDSACASA-N 6-(3-fluorophenyl)-3-methyl-7-[(1s)-1-(7h-purin-6-ylamino)ethyl]-[1,3]thiazolo[3,2-a]pyrimidin-5-one Chemical compound C=1([C@@H](NC=2C=3N=CNC=3N=CN=2)C)N=C2SC=C(C)N2C(=O)C=1C1=CC=CC(F)=C1 RSIWALKZYXPAGW-NSHDSACASA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003336 CuNi Inorganic materials 0.000 description 2
- 229910020658 PbSn Inorganic materials 0.000 description 2
- 101150071746 Pbsn gene Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- BJXYHBKEQFQVES-NWDGAFQWSA-N enpatoran Chemical compound N[C@H]1CN(C[C@H](C1)C(F)(F)F)C1=C2C=CC=NC2=C(C=C1)C#N BJXYHBKEQFQVES-NWDGAFQWSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- ZUGYBSSWYZCQSV-UHFFFAOYSA-N indium(3+);phosphite Chemical compound [In+3].[O-]P([O-])[O-] ZUGYBSSWYZCQSV-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GDUANFXPOZTYKS-UHFFFAOYSA-N 6-bromo-8-[(2,6-difluoro-4-methoxybenzoyl)amino]-4-oxochromene-2-carboxylic acid Chemical compound FC1=CC(OC)=CC(F)=C1C(=O)NC1=CC(Br)=CC2=C1OC(C(O)=O)=CC2=O GDUANFXPOZTYKS-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 229910016347 CuSn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 101150049168 Nisch gene Proteins 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 229910010380 TiNi Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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- H01L2924/1025—Semiconducting materials
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- H01L2924/1032—III-V
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT06742995T ATE500613T1 (de) | 2005-05-25 | 2006-05-19 | Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung |
EP06742995A EP1883962B1 (de) | 2005-05-25 | 2006-05-19 | Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung |
JP2008512742A JP2008543035A (ja) | 2005-05-25 | 2006-05-19 | Ubmパッド、はんだ接触子及びはんだ接合方法 |
US11/915,128 US20080308297A1 (en) | 2005-05-25 | 2006-05-19 | Ubm Pad, Solder Contact and Methods for Creating a Solder Joint |
DE502006009000T DE502006009000D1 (de) | 2005-05-25 | 2006-05-19 | Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005024088.7 | 2005-05-25 | ||
DE102005024088 | 2005-05-25 | ||
DE102005051857A DE102005051857A1 (de) | 2005-05-25 | 2005-10-28 | UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung |
DE102005051857.5 | 2005-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006125571A1 true WO2006125571A1 (de) | 2006-11-30 |
Family
ID=36889041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/004783 WO2006125571A1 (de) | 2005-05-25 | 2006-05-19 | Ubm-pad, lötkontakt und verfahren zur herstellung einer lötverbindung |
Country Status (9)
Country | Link |
---|---|
US (1) | US20080308297A1 (de) |
EP (1) | EP1883962B1 (de) |
JP (1) | JP2008543035A (de) |
KR (1) | KR20080008375A (de) |
AT (1) | ATE500613T1 (de) |
DE (2) | DE102005051857A1 (de) |
PT (1) | PT1883962E (de) |
TW (1) | TWI302722B (de) |
WO (1) | WO2006125571A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5099644B2 (ja) * | 2006-05-29 | 2012-12-19 | 日本電気株式会社 | 電子部品、半導体パッケージ及び電子機器 |
US8293587B2 (en) * | 2007-10-11 | 2012-10-23 | International Business Machines Corporation | Multilayer pillar for reduced stress interconnect and method of making same |
US9035459B2 (en) * | 2009-04-10 | 2015-05-19 | International Business Machines Corporation | Structures for improving current carrying capability of interconnects and methods of fabricating the same |
US8378485B2 (en) | 2009-07-13 | 2013-02-19 | Lsi Corporation | Solder interconnect by addition of copper |
TWI381901B (zh) * | 2009-12-15 | 2013-01-11 | Univ Yuan Ze | 抑制錫-鎳介金屬於銲點中生成的方法 |
JP5693375B2 (ja) * | 2010-05-28 | 2015-04-01 | シチズンホールディングス株式会社 | 半導体発光素子 |
US8797057B2 (en) | 2011-02-11 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Testing of semiconductor chips with microbumps |
TWI430377B (zh) * | 2011-08-09 | 2014-03-11 | Univ Nat Chiao Tung | 用於減緩介金屬化合物成長之方法 |
JP2013187423A (ja) * | 2012-03-08 | 2013-09-19 | Elpida Memory Inc | 半導体チップ及びその製造方法 |
JP6525620B2 (ja) * | 2015-02-05 | 2019-06-05 | キヤノン株式会社 | 液体吐出ヘッド用基板の製造方法 |
US11257745B2 (en) * | 2017-09-29 | 2022-02-22 | Intel Corporation | Electroless metal-defined thin pad first level interconnects for lithographically defined vias |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904859A (en) * | 1997-04-02 | 1999-05-18 | Lucent Technologies Inc. | Flip chip metallization |
US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
EP1223613A2 (de) * | 2001-01-15 | 2002-07-17 | Nec Corporation | Elektrodenstruktur für Halbleitervorrichtung, sowie Herstellungsverfahren und -apparatur |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000022027A (ja) * | 1998-06-29 | 2000-01-21 | Sony Corp | 半導体装置、その製造方法およびパッケージ用基板 |
JP4237325B2 (ja) * | 1999-03-11 | 2009-03-11 | 株式会社東芝 | 半導体素子およびその製造方法 |
KR100311975B1 (ko) * | 1999-12-16 | 2001-10-17 | 윤종용 | 반도체소자 및 그 제조방법 |
US6596619B1 (en) * | 2002-05-17 | 2003-07-22 | Taiwan Semiconductor Manufacturing Company | Method for fabricating an under bump metallization structure |
US7095121B2 (en) * | 2002-05-17 | 2006-08-22 | Texas Instrument Incorporated | Metallic strain-absorbing layer for improved fatigue resistance of solder-attached devices |
JP3978449B2 (ja) * | 2002-06-21 | 2007-09-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
-
2005
- 2005-10-28 DE DE102005051857A patent/DE102005051857A1/de not_active Withdrawn
-
2006
- 2006-05-19 WO PCT/EP2006/004783 patent/WO2006125571A1/de active Application Filing
- 2006-05-19 DE DE502006009000T patent/DE502006009000D1/de active Active
- 2006-05-19 AT AT06742995T patent/ATE500613T1/de active
- 2006-05-19 EP EP06742995A patent/EP1883962B1/de active Active
- 2006-05-19 PT PT06742995T patent/PT1883962E/pt unknown
- 2006-05-19 KR KR1020077027168A patent/KR20080008375A/ko not_active Application Discontinuation
- 2006-05-19 US US11/915,128 patent/US20080308297A1/en not_active Abandoned
- 2006-05-19 JP JP2008512742A patent/JP2008543035A/ja active Pending
- 2006-05-23 TW TW095118197A patent/TWI302722B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904859A (en) * | 1997-04-02 | 1999-05-18 | Lucent Technologies Inc. | Flip chip metallization |
US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
EP1223613A2 (de) * | 2001-01-15 | 2002-07-17 | Nec Corporation | Elektrodenstruktur für Halbleitervorrichtung, sowie Herstellungsverfahren und -apparatur |
Also Published As
Publication number | Publication date |
---|---|
PT1883962E (pt) | 2011-05-31 |
TW200705585A (en) | 2007-02-01 |
DE102005051857A1 (de) | 2007-02-22 |
JP2008543035A (ja) | 2008-11-27 |
US20080308297A1 (en) | 2008-12-18 |
EP1883962B1 (de) | 2011-03-02 |
EP1883962A1 (de) | 2008-02-06 |
TWI302722B (en) | 2008-11-01 |
ATE500613T1 (de) | 2011-03-15 |
DE502006009000D1 (de) | 2011-04-14 |
KR20080008375A (ko) | 2008-01-23 |
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