WO2006120843A1 - Procede de nettoyage par plasma, procede de formation de film et appareil de traitement par plasma - Google Patents

Procede de nettoyage par plasma, procede de formation de film et appareil de traitement par plasma Download PDF

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Publication number
WO2006120843A1
WO2006120843A1 PCT/JP2006/308112 JP2006308112W WO2006120843A1 WO 2006120843 A1 WO2006120843 A1 WO 2006120843A1 JP 2006308112 W JP2006308112 W JP 2006308112W WO 2006120843 A1 WO2006120843 A1 WO 2006120843A1
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WIPO (PCT)
Prior art keywords
plasma
cleaning
gas
gap
upper electrode
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PCT/JP2006/308112
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English (en)
Japanese (ja)
Inventor
Shigeo Ashigaki
Yoshihiro Kato
Satoru Kawakami
Masayuki Moroi
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Tokyo Electron Limited
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Publication of WO2006120843A1 publication Critical patent/WO2006120843A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • Plasma cleaning method, film forming method, and plasma processing apparatus Plasma cleaning method, film forming method, and plasma processing apparatus
  • the present invention relates to a plasma cleaning method, a film forming method, and a plasma processing apparatus. Specifically, for example, plasma is generated in a processing container used for film forming processing such as chemical vapor deposition (CVD).
  • the present invention relates to a plasma cleaning method and a film forming method for cleaning by using.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-57106 (Claims)
  • Patent Document 1 in a parallel plate type plasma apparatus, when plasma cleaning is performed by applying high frequency power to the upper and lower electrodes, the electrodes are damaged, causing dust generation, May affect film formation performance.
  • materials such as A1 are commonly used for the showerhead, which is a gas introduction member of the plasma CVD apparatus and also serves as the upper electrode, but this A1 made material is used for the purpose of removing a large amount of deposits in a short time.
  • high output power is applied to a single head, plasma damage is added, causing corrosion of the electrode itself, dust generation, and the like, resulting in poor film reproducibility.
  • an object of the present invention is to provide a plasma taring that can be reliably cleaned in a short time with high taring efficiency while suppressing corrosion and damage to parts in the processing container. It is to provide a method.
  • the present invention relates to a processing container, an upper electrode and a lower electrode arranged to face each other in the processing container, a gas introducing means for introducing a cleaning gas into the processing container, and an external device in the processing container.
  • the second step is performed following the first step, and the second electrode has a wider interval between the upper electrode and the lower electrode than the first gear. Characterized by comprising a second step of cleaning the inside processing hairdressing device with a gap, and a Purazumaku cleaning method.
  • At least the gas introduction means force also introduces a cleaning gas
  • the upper electrode and the Z or the lower electrode A step of cleaning the inside of the processing container by generating a plasma of a cleaning gas by applying a high frequency power, and a plasma of the cleaning gas generated outside is introduced into the processing container from the plasma introducing means. And performing a cleaning step.
  • a plasma cleaning method comprising:
  • the gas introduction means cap is simultaneously introduced with the plasma.
  • a cleaning gas is introduced, and at the same time, high-frequency power is applied to the upper electrode and Z or the lower electrode, thereby A plasma cleaning method is characterized in that a plasma of a cleaning gas is generated inside.
  • the second step of cleaning the inside of the processing container in the second gap introduces a cleaning gas into the upper electrode and Z or the lower electrode.
  • This is a step force for cleaning the inside of the processing vessel by generating a plasma of the cleaning gas by applying a high frequency power, which is performed following the second step, and is generated at least externally in the second gap.
  • a plasma cleaning method further comprising a third step of cleaning the inside of the processing container by introducing a plasma of the cleaning gas.
  • the present invention introduces a cleaning gas from the gas introduction means while introducing the plasma of the cleaning gas generated outside, and the upper electrode and the Z or the lower portion.
  • a plasma cleaning method is characterized in that high-frequency power is applied to an electrode to generate plasma of tarry gas in the processing vessel.
  • the high frequency power applied to the upper electrode and Z or the lower electrode in the third step is applied to the upper electrode and Z or the lower electrode in the second step. It is a brass maturing method characterized by being smaller than high-frequency power.
  • the present invention is the plasma cleaning method, wherein the cleaning in the first step is performed until the deposit formed on the side portion of the lower electrode is removed.
  • the cleaning in the second step is stopped immediately before the deposit formed on the upper electrode is removed and the upper electrode is exposed. It is.
  • the present invention is the plasma turing method, wherein the processing container is a processing container for forming a film on a target object by a CVD method.
  • the present invention is the plasma tailing method, wherein the first gap is the same as the gap when the film is formed on the object to be processed.
  • the second gap is a gear for transporting an object to be processed to the processing container. This is the same plasma cleaning method as that described above.
  • the present invention is the plasma cleaning method, wherein the CVD method is a plasma CVD using an organic compound as a raw material.
  • the present invention is the plasma cleaning method, wherein the organic compound contains Si, and the plasma CVD is film formation of a film containing Si as a constituent element.
  • the present invention is a plasma cleaning method, wherein a gas containing a halogen compound and oxygen is used as a cleaning gas.
  • the halogenated compound is NF, characterized in that the plasma tally
  • the present invention relates to a processing container for performing a film forming process on an object to be processed, an upper electrode and a lower electrode disposed to face each other in the processing container, and a tarrying gas in the processing container.
  • a film forming method using a plasma processing apparatus having a gas introducing means for introducing gas and a plasma introducing means for introducing plasma generated externally into the processing vessel, and using a plasma processing apparatus, And a step of cleaning the plasma processing apparatus after that, and the step of cleaning the plasma processing apparatus sets the interval between the upper electrode and the lower electrode to a first level.
  • the gap is set to 1 and the gas introduction means force is also introduced with cleaning gas, and high frequency power is applied to the upper electrode and Z or the lower electrode to clean the gas.
  • a first step of generating a gas gas plasma and cleaning the inside of the processing vessel is performed following the first step, and the upper electrode and the lower electrode are compared with the first gap. And a second step of cleaning the inside of the processing container with a second gap having a wide gap.
  • the present invention relates to a processing container for performing a film forming process on an object to be processed, an upper electrode and a lower electrode disposed opposite to each other in the processing container, and a tallying gas in the processing container.
  • Gas introducing means for introducing gas plasma introducing means for introducing externally generated plasma into the processing container, gap adjusting means for adjusting the distance between the upper electrode and the lower electrode, and plasma in the processing container
  • Control part to control and cleaning The control unit controls the upper electrode, the lower electrode, the gas introducing means, the plasma introducing means, and the gap adjusting means to set a first interval between the upper electrode and the lower electrode.
  • the gas introduction means also introduces a cleaning gas, and a high frequency power is applied to the upper electrode and Z or the lower electrode to generate a cleaning gas plasma, thereby cleaning the inside of the processing vessel.
  • the plasma processing apparatus is characterized in that the inside of the processing container is cleaned with a second gear having a wider gap between the upper electrode and the lower electrode than the first gap.
  • the present invention relates to a control program that operates on a computer and performs a plasma tiling method of a plasma processing apparatus at the time of execution.
  • the plasma cleaning method includes an upper portion disposed opposite to each other in the processing container. Tiling of a plasma processing apparatus provided with an electrode and a lower electrode, a gas introducing means for introducing a cleaning gas into the processing container, and a plasma introducing means for introducing an externally generated plasma into the processing container
  • the gap between the upper electrode and the lower electrode is set to the first gap
  • the gas introduction means force is introduced as well as the cleaning gas
  • a high frequency power is applied to the lower electrode to generate a plasma of a tarrying gas, and the inside of the processing vessel is tarnished.
  • the first step is performed in succession to the first step, and the second gap in which the distance between the upper electrode and the lower electrode is wider than the first gap is set in the processing vessel.
  • a control program comprising: a second step of cleaning.
  • the present invention is a computer storage medium storing a control program that runs on a computer, and the control program performs a plasma tiling method of a plasma processing apparatus at the time of execution.
  • Generated in the processing vessel an upper electrode and a lower electrode arranged opposite to each other in the processing vessel, a gas introducing means for introducing a cleaning gas into the processing vessel, and generated outside in the processing vessel
  • a plasma cleaning method for cleaning a plasma processing apparatus provided in a plasma introduction means for introducing plasma
  • a gap between the upper electrode and the lower electrode is set to a first gap
  • the gas introduction means In addition to introducing cleaning gas, high-frequency power is applied to the upper electrode and Z or the lower electrode.
  • Te of cleaning gas Bra The first step of generating a gap and cleaning the inside of the processing container is performed following the first step, and the distance between the upper electrode and the lower electrode is larger than that of the first gap.
  • a computer storage medium comprising: a second step of cleaning the inside of the processing container with a wide second gap.
  • the cleaning is divided into a plurality of steps, and the interval between the upper electrode and the lower electrode is set according to each step. Therefore, efficient cleaning is possible, and the components in the processing container Cleaning can be performed reliably in a short time while suppressing corrosion and damage.
  • FIG. 1 is a cross-sectional view schematically showing a plasma CVD apparatus suitable for carrying out the method of the present invention.
  • FIG. 2 is a flowchart showing an outline of a cleaning procedure.
  • FIG. 3 is a schematic view of a plasma CVD apparatus for explaining a cleaning procedure.
  • FIG. 4 is a flowchart showing the steps of a film forming process including cleaning.
  • FIG. 5 is a graph showing the relationship between the number of wafers processed and the number of particles.
  • FIG. 6 is a graph showing the relationship between the number of wafers processed and the film thickness.
  • FIG. 7 is a graph showing the relationship between the number of wafers processed and the refractive index.
  • the processing container to be cleaned by the plasma cleaning method of the present invention is used for a film forming process by, for example, a thermal CVD method, a plasma CVD method, etc., and particularly a wafer (processed object) using a plasma.
  • the present invention can be suitably applied to a film deposition apparatus for plasma CVD that forms a film on a body.
  • the film to be formed by the CVD process is not particularly limited, and examples thereof include a film formed by plasma CVD using an organic compound as a raw material.
  • examples of the organic compound include organic compounds containing Si, such as trimethylsilane, dimethylethoxysilane, triethylsilazane, and tetramethyldisilazane.
  • an S-type film containing Si as a constituent element of the film can be cited.
  • a SiC film such as a SiCH film or a SiOCH film, a SiCN film, SiON film, SiN film, S ⁇ film and the like.
  • the cleaning gas it is preferable to use a gas containing a halogen element such as fluorine or oxygen as a constituent element.
  • a gas containing a halogen element such as fluorine or oxygen
  • a halogen compound and Z or oxygen and an inert gas as a carrier.
  • a gas mixture is mentioned, and NF / O ZHe is preferable.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma CVD apparatus 1 suitable for implementing the present invention.
  • This plasma CVD apparatus 1 is configured as a capacitively coupled parallel plate plasma CVD apparatus with electrode plates facing in parallel vertically.
  • This plasma CVD apparatus (plasma processing apparatus) 1 has a chamber 1 as a processing container 2 formed into a cylindrical shape made of, for example, an aluminum cover whose surface is ceramic sprayed. 2 is a safety ground.
  • a susceptor 3 which also has a silicon force and on which a wafer W for forming a predetermined film is placed, and functions as a lower electrode is provided.
  • the susceptor 3 is embedded with a conductor (not shown), and is configured to receive high-frequency power through the conductor.
  • the susceptor 3 has an upper center formed into a convex disk shape, and an electrostatic chuck 5 in which an electrode 6 is interposed between insulating materials is provided thereon.
  • an electrostatic chuck 5 in which an electrode 6 is interposed between insulating materials is provided thereon.
  • the wafer W can be electrostatically attracted by Coulomb force.
  • a focus ring 7 made of a ceramic material such as alumina is provided on the outer periphery of the susceptor 3.
  • a shower head 10 that functions as an upper electrode is provided above the susceptor 3 so as to face the susceptor 3 in parallel.
  • the shower head 10 is made of a material such as A1, and is supported on the upper wall 2a of the chamber 12 through an insulating material (not shown).
  • a large number of discharge holes 11 are provided on the surface 10a of the shower head 10 facing the susceptor 3. Yes. Note that the surface of the wafer W and the shower head 10 are separated by a predetermined interval, and this distance can be adjusted by an elevating mechanism (described later).
  • the shower head 10 is provided with a gas inlet 12 and communicates with the discharge hole 11 via a gas supply chamber 10b inside the shower head 10.
  • the gas inlet 12 is connected to a gas supply source 20 for supplying a film forming gas and a cleaning gas via a gas supply pipe 23.
  • the gas supply source 20 has a film forming gas supply source 21 and a cleaning gas supply source 22. These gas sources are connected to pipes branched from the gas supply pipe 23 by a valve 24 and a mass Connected via low controller 25 and valve 26.
  • a film forming gas by C VD for example, a mixed gas of (CH 3) SiH and He, a cleaning gas,
  • a mixed gas of NF, O, and He or a mixed gas of NF, O, and Ar is used.
  • the film forming gas and the cleaning gas reach the space in the shower head 10 through the gas inlet 12 and are discharged from the discharge holes 11.
  • An exhaust pipe 15 is provided on the side wall of the chamber 12, and this exhaust pipe 15 is connected to an exhaust device 40 such as a dry pump, for example, and the inside of the chamber 12 has a predetermined pressure reduction. It is configured so that it can be evacuated to a predetermined pressure of the atmosphere, for example lOPa or less.
  • the side wall of the chamber 12 is provided with a loading / unloading port for the wafer W and a gate valve for opening and closing the loading / unloading port (both are not shown), and the wafer W is transferred through these. It ’s like that.
  • the susceptor 3 is supported by a support base 4, and can be lifted and lowered via a shaft 16a by a lifting mechanism 16 such as a ball screw mechanism.
  • a lifting mechanism 16 such as a ball screw mechanism.
  • the drive part of the support 4 is covered with a bellows 14 made of a material such as stainless steel (SUS).
  • a bellows cover 13 is provided outside the bellows 14.
  • a high frequency power source 30 is connected to the shower head 10 functioning as an upper electrode, and a matching unit 31 is interposed in the power supply line.
  • This high frequency power supply 30 supplies high frequency power of 13.56 MHz, for example, to the shower head 10, and forms a high frequency electric field for plasma formation between the shower head 10 as the upper electrode and the susceptor 3 as the lower electrode. To do.
  • the shower head 10 is connected to a low-pass filter (LPF) (not shown).
  • LPF low-pass filter
  • a high frequency power supply 32 is connected to the susceptor 3 functioning as a lower electrode, and a matching unit 33 is interposed in the power supply line.
  • the high-frequency power source 32 can supply high-frequency power having a frequency of, for example, 2. OMHz to the susceptor 3 that is the lower electrode.
  • a high pass filter (HPF) (not shown) is connected to the susceptor 3.
  • a plasma introducing unit 17 is provided on the side wall of the chamber 12, and a remote plasma unit 50 for generating a cleaning gas plasma is connected to the plasma introducing unit 17. ing.
  • the remote plasma unit 50 is connected to a second tar- ing gas supply source 51 via a valve 52, and the second cleaning gas supply source 51 receives a cleaning gas such as the halogen-containing mixed gas illustrated above. Is supplied, converted into plasma in the remote plasma unit 50, and sent to the chamber 12.
  • the plasma generation means in the remote plasma unit 50 is not particularly limited.
  • the Taly Jung gas can be converted into plasma by a method such as an inductive coupling method (ICP method).
  • ICP method inductive coupling method
  • the remote plasma unit 50 for example, a commercially available product such as “ASTRON” (trade name; manufactured by mks) can be suitably used. It is preferable to provide an ion filter for trapping ions in the plasma near the exit of the remote plasma unit 50 so that radicals are dominant in the plasma introduced into the chamber 2. .
  • Each component of the plasma CVD apparatus 1 is connected to and controlled by a process controller 60 having a CPU.
  • the process controller 60 includes a keyboard on which a process manager inputs commands for managing the plasma CVD apparatus 1, a plasma,
  • a user interface 61 is connected, which is a display that visualizes and displays the operating status of the CVD apparatus 1.
  • the plasma CVD apparatus 1 is a recipe in which a control program (software) and process condition data for realizing various processes executed by the plasma CVD apparatus 1 are controlled by the process controller 60. Is stored.
  • an arbitrary recipe is called from the storage unit 62 according to an instruction from the user interface 61 and executed by the process controller 60, so that plasma CVD is performed under the control of the process controller 60.
  • the desired processing in device 1 is performed.
  • the recipes such as the control program and processing condition data may be stored in a computer-readable storage medium such as a CD-ROM, hard disk, flexible disk, flash memory, or the like. For example, it can be transmitted online from another device as needed via a dedicated line.
  • the wafer W is first placed on the susceptor 3 and is attracted and left by the electrostatic chuck 5.
  • the inside of the chamber 12 is exhausted to a predetermined degree of vacuum by the exhaust device 40.
  • the support base 4 is raised by the elevating mechanism 16 to place Ueno and W at the processing position.
  • the susceptor 3 is controlled to a predetermined temperature, and the exhaust in the chamber 12 is exhausted by the exhaust device 40 to obtain a predetermined high vacuum state.
  • the film forming gas is supplied from the film forming gas supply source 21 to the chamber 12 while being controlled to a predetermined flow rate.
  • the film forming gas supplied to the shower head 10 is uniformly discharged toward the wafer W from the discharge holes 11.
  • a high frequency power of, for example, about 13.56 MHz is applied from the high frequency power supply 30 to the shower head 10, thereby generating a high frequency electric field between the shower head 10 as the upper electrode and the susceptor 3 as the lower electrode,
  • the deposition gas is turned into plasma. This plasma is attracted to the vicinity of the susceptor 3 by applying power having a frequency lower than that of the high frequency power applied to the shower head 10 to the susceptor 3.
  • FIG. 2 is a flowchart showing an example of the procedure of the plasma cleaning method.
  • FIG. 3 schematically shows a state in the chamber 12 of the plasma cleaning process in the first to third steps.
  • the deposit film D is drawn exaggeratedly.
  • the gap between the upper and lower electrodes (specifically, the distance from the lower surface of the shower head 10 to the upper surface of the susceptor 3) is adjusted to the first gap (step Sl l).
  • the first gap can be the same gap as that at the time of film formation, for example.
  • a large amount of deposit film D adheres to the inner wall of the chamber 12 and the side of the susceptor 3.
  • the deposited wafers W and W are unloaded from the chamber 12 after the film deposition process, and a dummy wafer is loaded and placed on the susceptor 3 instead. By placing a dummy wafer, damage to the susceptor 3 due to plasma can be prevented.
  • the cleaning gas is supplied from the cleaning gas supply source 22 to the chamber 2 at a predetermined flow rate, and a high frequency power of, for example, about 13.56 MHz is applied from the high frequency power supply 30 to the shower head 10.
  • a high frequency power of, for example, about 13.56 MHz is applied from the high frequency power supply 30 to the shower head 10.
  • the cleaning gas supplied to the shower head 10 is uniformly discharged from the discharge holes 11, the cleaning gas is generated by the high-frequency electric field generated between the shower head 10 as the upper electrode and the susceptor 3 as the lower electrode.
  • the plasma cleaning of the first step is performed by the plasma generated by the parallel plate type plasma generating means (hereinafter, sometimes referred to as “parallel plate plasma” for convenience) (step S12).
  • the deposit film D adhering mainly to the side wall surface of the susceptor 3 is removed by the plasma of the cleaning gas.
  • the gap is set to be small so that the plasma of the cleaning gas sufficiently acts on the side wall surface of the susceptor 3.
  • the deposits on the shower head 10 and the inner wall of the chamber 1-2 are also partially cleaned and removed.
  • the chamber 1 is covered with the deposit film D including the facing surface 10a of the A1 shower head 10, the deposit film D functions as a protective film and has a high cleaning speed. Even if cleaning is applied, damage to the shower head 10 can be avoided.
  • the cleaning condition of the first step is preferably selected so that the inner surface of the upper wall 2a including the A1 shower head 10 can be uniformly cleaned.
  • the NF gas as a cleaning gas is supplied from the gas inlet 12.
  • the pressure inside the chamber 1 is adjusted to 50 to 100 Pa, and, for example, high frequency power of 13.56 MHz, for example, is output to the shower head 10 as the upper electrode 0.42 WZcm 2 to 0.998 WZcm 2 or less (the susceptor 3 which is the lower electrode is OWZcm 2 ; in other words, it means that the high frequency power is not applied to the lower electrode; the same applies hereinafter). It is preferable to generate a high-frequency electric field and turn the Tarry Jung gas into a plasma.
  • a wafer W having a TEOS film (SiO film) formed on the susceptor 3 is placed.
  • etching test using a cleaning gas plasma (pseudo-cleaning test) was performed, and conditions were selected such that the in-plane uniformity of the etching rate was about 5% (lSigma%).
  • the TEOS film etching test was performed to select the cleaning conditions.
  • the SiC-based film the etching rate is too high, and all etching may occur, making it difficult to evaluate uniformity. Therefore, instead, a test using a TEOS film that can evaluate the etching characteristics with a slower etching rate than the SiC-based film was adopted. Since the SiC-based film and the TEOS film have a certain correlation in etching characteristics, it is possible to indirectly evaluate the etching characteristics (ie, cleaning characteristics) of the SiC-based film.
  • the cleaning speed force of the deposit film D formed on the side surface of the susceptor 3 can also be obtained.
  • the overetching time equivalent to 10% is set to the time for removing all of it (just etching time). it can .
  • the showerhead 10 made of A1 is still covered with the deposit film D, and it is confirmed that A1 is not exposed.
  • the second gap can be a gap when the wafer W is carried into and out of the chamber 12, for example, and can be set by lowering the susceptor 3 to the transfer position of the wafer W.
  • the second gap is not limited to the gap at the time of loading / unloading, but is preferably as wide as possible. Therefore, the maximum gap may be designed. This is because if the gap is wide, the plasma can be spread to every corner of the processing space in the chamber 12, so that uniform cleaning can be achieved.
  • the second step of plasma tallying is performed using parallel plate plasma (step S14).
  • the deposit film D on the side of the susceptor 3 is almost removed, so that the inner surface of the upper wall 2a mainly including the shower head 10 is mainly removed.
  • Cleaning is performed for the purpose of removing the deposit film D adhering to the surface.
  • the parallel plate plasma can be spread over the entire processing space in the chamber 2 by widening the gap, the side walls in the chamber 1 and the inner surface of the upper wall 2a should be cleaned evenly. Can do.
  • a cleaning condition in the second step so that the inner surface of the upper wall 2a including the A1 shower head 10 can be cleaned uniformly.
  • the NF gas as a cleaning gas is supplied from the gas inlet 12.
  • the pressure inside the chamber 1 is adjusted to 50 to 100 Pa, and for example, high frequency power of 13.56 MHz, for example, is output to the showerhead 10 as the upper electrode 0.70 WZcm per wafer unit area 2 or 1.
  • 26WZcm 2 below (the susceptor 3 is a lower electrode OWZcm 2) produce a high frequency electric field between applied to the electrodes at the output of, preferably be plasma tally Yungugasu.
  • the TEOS on the susceptor 3 is used as the cleaning condition for the second step.
  • a film SiO film is placed to generate cleaning gas plasma, and its etching rate
  • the cleaning conditions were selected so that the in-plane uniformity of the film was about 5% (lSigma%).
  • the TEOS film was used to select the tailing condition for the same reason as above.
  • the cleaning time in this second step is until the deposit film D formed on the upper wall 2a including the showerhead 10 made of A1 is removed, and just before the facing surface 10a of the showerhead 10 is exposed. It is preferable to set the time. This time can be obtained by measuring the cleaning speed of the deposit film D formed on the upper wall 2a and calculating the film thickness force of the deposit film D. Also, this time can be obtained from the total amount of film formed on the wafer W.
  • the cleaning time is preferably set to 20 to 30 seconds, and when the total film forming amount is different, it is preferable to determine the cleaning time in this proportional relationship. If the A1 shower head 10 is exposed and cleaning is performed with a parallel plate plasma with a strong output, the protection effect due to the deposit D cannot be obtained. Although it causes deterioration of film reproducibility, plasma damage can be reduced by stopping the cleaning in the second step immediately before the shower head 10 is exposed. Therefore, it is possible to reduce the cleaning time by maximizing efficient cleaning using parallel flat plate plasma with a high cleaning speed, and to prevent plasma damage to the shower head 10, etc. The frequency can be reduced and the operating efficiency of the film forming apparatus can be improved.
  • cleaning using remote plasma which will be described later, may be performed in combination with cleaning using parallel plate plasma.
  • Step S15 the deposit film D remaining in the chamber 12 is removed by a combination of remote plasma and low power parallel plate plasma.
  • the A1 shower head 10 is exposed, reducing the plasma damage caused by the cleaning gas. Therefore, mild remote plasma and low power parallel plate plasma are used.
  • remote plasma only remote plasma may be used.
  • Cleaning using remote plasma is performed by introducing F-containing plasma generated in the remote plasma unit 50 into the chamber 12.
  • F-containing plasma generated in the remote plasma unit 50 into the chamber 12.
  • parallel plate plasma for example, tally containing NF etc.
  • the shower head 10 serving as the upper electrode, for example, 13.
  • the high frequency power applied here be a smaller output than the high frequency power applied to the shower head 10 in the second step.
  • the cleaning time of the third step can be selected experimentally by conducting a long-term running test.
  • the total deposition amount of the SiC-based film deposited on the wafer W is 0.5 ⁇ m. If this is the case, 900-1000 seconds should be used.
  • FIG. 4 is a process diagram showing an example of the procedure of the film forming method.
  • a film forming process for forming a SiC-based film or the like is performed on a predetermined number (for example, 3 to: L0, preferably 5 to 7) of wafers W
  • the first -Perform the first cleaning according to the third step then perform the film forming process on the predetermined number of wafers W in the same manner, and then perform the second cleaning in the same order.
  • Plasma tailing is inserted intermittently during the film formation process.
  • the gap between the upper and lower electrodes was first adjusted to the first gap.
  • This first gap was set to 18 mm, which was the same as during film formation.
  • NF gas as tally gas is 133mLZmin (sccm)
  • O gas is 67mLZmin (sccm)
  • He gas are introduced at 400 mLZmin (sccm), the pressure inside the chamber 12 is adjusted to 65 Pa (0.488 Torr), and the high frequency power of 13.56 MHz is output to the shower head 10 which is the upper electrode 500 W (wafer) 0.7 WZcm 2 per unit area; applied to the susceptor 3 as the lower electrode at 0 W), a high frequency electric field was generated between the electrodes, and a cleaning gas plasma was generated.
  • the temperature of the electrostatic chuck 5 was 300 ° C.
  • the cleaning time in this first step is the time required to remove all of the deposit film D formed on the side surface of the susceptor 3 (just etching time). 121 seconds were used as the time to hold At the end of this first step, that is, when the removal of the deposit film D on the side surface of the susceptor 3 was completed, the A1 showerhead 10 was still covered with the deposit film D and was not exposed.
  • the cleaning condition of the first step is that the upper wall 2 including the shower head 10 made of A1.
  • TEOS film SiO film on susceptor 3
  • the gap was widened and adjusted to the second gap.
  • This second gap was set to 116 mm by lowering the susceptor 3 to the transfer position where the wafer W was loaded and unloaded.
  • the interior of the chamber 1 is adjusted to 65 Pa (0.48 8 Torr) mainly for the purpose of removing the deposit film D adhering to the shower head 10 and the inner wall of the chamber 1, and cleaning is performed from the gas inlet 12. 200mLZ of NF gas as gas
  • the cleaning time in the second step was set to 26 seconds based on the cleaning speed of the deposit film D formed on the upper wall 2a including the showerhead 10 made of A1.
  • a TEOS film SiO film is formed on the susceptor 3 in order to uniformly clean the inner surface of the upper wall 2a including the shower head 10 made of A1.
  • the deposit film D remaining in the chamber 12 was removed by a combination of remote plasma and low-power parallel plate plasma.
  • the A1 showerhead 10 was already exposed, so in order to reduce damage to the showerhead 10, remote plasma was used and a low-power parallel plate plasma was supplementarily used.
  • F-containing plasma generated by the ICP method in the remote plasma unit 50 was introduced into the chamber 12.
  • a high frequency power of about 13.56 MHz is applied to the shower head 10 as the upper electrode at an output of 200 W (0.28 WZcm 2 per wafer unit area; 0 W to the susceptor 3 as the lower electrode).
  • a high frequency electric field was generated between the electrodes, and a cleaning gas plasma was generated.
  • the inside of the chamber 12 is adjusted to 266 Pa (2 Torr)
  • NF gas as the tallying gas from the gas inlet 12 is 300 mLZmin (sccm)
  • O gas is 100 mLZmin (scc
  • the horizontal axis in Fig. 5 is the number of wafers W processed, and the vertical axis is the number of particles per wafer W.
  • particles having a particle size exceeding 0.16 / zm were counted. From Fig. 5, the number of particles did not increase even when the cumulative number of wafers W processed reached 10,000, and the average number of wafers moved around 13 Z wafers.
  • the electrodes are damaged, and the number of accumulated treatments is about 1000 to 1500, and particles exceeding the allowable range are generated. It was.
  • FIG. 6 shows changes in film thickness and in-plane uniformity in the running test.
  • FIG. 7 shows changes in the refractive index and its in-plane uniformity in the running test.
  • FIG. 7 shows that the refractive index and the uniformity of the refractive index in each wafer W surface are almost the same level even when the number of processed wafers is increased, and the film quality variation is small.
  • the average refractive index of all wafers W was 1.8965, and the variation in refractive index between all wafers was 0.48% (1 Sigma%). Further, the uniformity of the refractive index within the wafer W plane was 0.64% (lSigma a%) on average.
  • plasma may not be used for CVD film formation as long as the apparatus can use plasma for the force cleaning described by taking the cleaning of the plasma CVD apparatus as an example.
  • the object to be cleaned may be a processing vessel of a thermal CVD apparatus that does not use plasma.
  • the force applied to the shower head 10 as the upper electrode may be applied to the lower electrode. It may be applied to both the upper electrode and the lower electrode.

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Abstract

Le procédé de nettoyage par plasma de l’invention inclut une première étape au cours de laquelle un espace entre une électrode supérieure et une électrode inférieure est fixé à un premier écartement, un gaz de nettoyage est introduit via un moyen d’introduction de gaz, le plasma de gaz de nettoyage est généré en appliquant une alimentation électrique de haute fréquence à l’électrode supérieure et/ou l’électrode inférieure et l’intérieur d’une enceinte de traitement est nettoyé. Cette première étape est suivie d’une deuxième étape destinée à effectuer un nettoyage en générant le plasma de gaz de nettoyage en utilisant un second écartement plus important que le premier. Cette deuxième étape est suivie d’une troisième étape consistant à effectuer un nettoyage en introduisant au moins le plasma de gaz de nettoyage généré à l’extérieur avec le second écartement.
PCT/JP2006/308112 2005-05-11 2006-04-18 Procede de nettoyage par plasma, procede de formation de film et appareil de traitement par plasma WO2006120843A1 (fr)

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CN112813415A (zh) * 2020-12-31 2021-05-18 拓荆科技股份有限公司 腔体内的清洁方法

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JP5220447B2 (ja) * 2008-03-17 2013-06-26 東京エレクトロン株式会社 基板処理システムの洗浄方法、記憶媒体及び基板処理システム
JP2014038874A (ja) * 2010-11-08 2014-02-27 Canon Anelva Corp プラズマ誘起ｃｖｄ方法
KR101289719B1 (ko) * 2011-12-22 2013-07-26 (주)지니아텍 유기발광다이오드의 마스크 세정장치
JP6290177B2 (ja) * 2013-03-13 2018-03-07 株式会社日立国際電気 基板処理装置、基板処理装置のクリーニング方法及び半導体装置の製造方法並びにプログラム
JP7246217B2 (ja) * 2019-03-19 2023-03-27 東京エレクトロン株式会社 成膜装置の洗浄方法
CN112687537B (zh) * 2020-12-17 2024-05-17 北京北方华创微电子装备有限公司 金属硬掩膜刻蚀方法

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JP2002057106A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置のクリーニング方法及び処理装置
JP2002343787A (ja) * 2001-05-17 2002-11-29 Research Institute Of Innovative Technology For The Earth プラズマ処理装置およびそのクリーニング方法

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JP2002057106A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置のクリーニング方法及び処理装置
JP2002343787A (ja) * 2001-05-17 2002-11-29 Research Institute Of Innovative Technology For The Earth プラズマ処理装置およびそのクリーニング方法

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CN112813415A (zh) * 2020-12-31 2021-05-18 拓荆科技股份有限公司 腔体内的清洁方法

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