Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/077—Connecting of TAB connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/0711—Apparatus therefor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/0711—Apparatus therefor
  • H10W72/07141—Means for applying energy, e.g. ovens or lasers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/0711—Apparatus therefor
  • H10W72/07173—Means for moving chips, wafers or other parts, e.g. conveyor belts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
  • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
  • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
  • H10W72/07207—Temporary substrates, e.g. removable substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
  • H10W72/07231—Techniques
  • H10W72/07235—Applying EM radiation, e.g. induction heating or using a laser
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
  • H10W72/07231—Techniques
  • H10W72/07236—Soldering or alloying
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
  • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/073—Connecting or disconnecting of die-attach connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/073—Connecting or disconnecting of die-attach connectors
  • H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
  • H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
  • H10W72/07307—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating the auxiliary member being a temporary substrate, e.g. a removable substrate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
  • H10W72/241—Dispositions, e.g. layouts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/321—Structures or relative sizes of die-attach connectors
  • H10W72/325—Die-attach connectors having a filler embedded in a matrix
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
  • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
  • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
  • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Definitions

• the present invention relates to a method for transferring a chip arranged on a transfer substrate to a contact substrate and contacting the chip with the contact substrate, in which the chip adhesively attached on a contact surface of the transfer substrate facing towards the contact substrate applies laser energy backwards through the transfer substrate and the chip is brought backward through the transfer substrate by means of a pressure device with its one contact surface of the contact substrate oppositely arranged chip contacts in contact with arranged on the contact surface substrate contacts and a thermal connection between the chip contacts and the substrate contacts is made. Furthermore, the invention relates to a device for carrying out the aforementioned method.
• the contacting of chips on a substrate regularly requires a handling of the chips, such that, before the actual contacting operation is carried out, a positioning of the chip relative to the substrate takes place, which is intended to ensure that the one that is successful Contacting necessary relative orientation of the chip contacts is given to the substrate contacts.
• This handling of the individual chips requires a correspondingly high expenditure on equipment, often associated with additional process steps for positioning the individual chips, which require correspondingly long process times for carrying out the entire contacting process.
• the present invention has for its object to provide a method for contacting chips on substrates, which manages with a relatively low handling costs and allows a shortening of the contacting times.
• the contacting of the chip with a substrate is not based on an immediate handling of the chip, but rather by mechanical and thermal loading of a transfer substrate, so that the orientation of the chip, as a prerequisite for a subsequent contacting process, by the arrangement the chip is defined on the transfer substrate and can avoid immediate handling of the chip having the comparatively smallest dimensions.
• the backside adhesive attachment of the chip to the transfer substrate allows for parallel backpressure of the chip with pressure and temperature simultaneously with execution of the delivery motion to establish an initial mechanical contact between the chip contacts and the substrate contacts and release the adhesive bond of the chip to the transfer substrate , Simultaneously with the release of the adhesive connection, the medium-term thermal application of the chip makes it possible to heat the chip contacts with the transfer of the heat into the substrate contacts, so that it is possible to produce a thermal connection to the mechanically permanent, electrically conductive connection between the chip contacts and the substrate contacts is.
• an adhesive application which can be set exactly to the desired release temperature, ie the temperature at which the chip separates from the film, is suitable in a particular manner with regard to the choice of the adhesive material.
• the adhesive application is designed as a pressure-sensitive adhesive applied to the film, it is particularly easy to apply the chip to the film.
• an adhesive coating applied to the chip is provided for connecting the chip to the transfer substrate.
• an adhesive application arranged between the chip and the contact substrate can be used, which is protected by the temperature loading. is curable and is designed to be electrically conductive in the connection region between the chip contacts and the substrate contacts. This is the case, for example, in the case of an anisotropic adhesive which, as a result of pressurization, experiences alignment of electrically conductive adhesive particles in the region of pressure peaks.
• solder material arranged on the chip contacts and / or the substrate contacts for connecting the chip to the contact substrate, so that a solder connection is produced for the mechanical and electrical connection of the chip to the contact substrate.
• connections between the chip and the contact substrate are also possible, such that, for example, between the chip contacts and the substrate contacts a solder connection is produced, which serves primarily for the production of the electrical contact, and, moreover, between the chip and the contact substrate Temperaturbeetzschung hardenable adhesive application is provided in the manner of an underfillers.
• the chips are arranged on the foil in a wafer arrangement formed by the singulation of chips from a wafer composite. This makes it possible to transfer the chips in exactly the same arrangement on the transfer substrate, which is based on a separation of the chips from a wafer, ie by a corresponding sawing of the wafer adjusts.
• the wafer can be provided with an adhesive application prior to dicing for dicing the chips, so that they are transferred in wafer arrangement to the transfer substrate immediately after dicing in their entirety can, without the individual chips have to be handled individually.
• wafer arrangement on the transfer substrate it may also be advantageous to choose an arrangement of the chips on the transfer substrate, which corresponds to a contact substrate arrangement, so for example when a single contact substrate with a plurality of chips of the arrangement of the respective chips associated substrate contacts.
• the device according to the invention has the features of claim 11 and is particularly suitable for carrying out the method according to the invention.
• the device according to the invention comprises a transfer tool which comprises a laser device and a pressure device and thus both the implementation of the feed movement for the production of the mechanical contact and the thermal loading for the production of the permanent mechanical see and electrical connection between the chip and the contact substrate allows.
• the transfer tool has a tool body for connecting an optical fiber for transmitting laser energy and provided with a laser transmission means contact mouth, so that both of the above functions, so both the implementation of the delivery movement as well as the application of laser energy, with a particular compact design of the transfer tool are possible.
• the advantageous embodiment of the contact mouthpiece as a pressure capillary allows a particularly discrete pressurization with simultaneous direct laser application by the capillary bore.
• a force-transmitting element which deflects under a defined load in particular a spring-supported force transmission element, is arranged between the tool body and the contact mouthpiece.
• a corresponding plurality of transfer tools is arranged in a transfer head, so that the transfer and contacting can take place either simultaneously or in a defined sequence.
• the matrix arrangement can be selected in a particularly advantageous manner, for example in accordance with a wafer arrangement of chips.
• the device for arranging the transfer substrate comprises a receiving device for Arrangement of a separating foil as a transfer substrate with a plurality of chips in wafer arrangement and is provided with a positioning device for positioning the individual chips of the wafer arrangement according to the arrangement of the chips on the contact substrate, it is possible, regardless of the formation of the contact substrates or the distribution of Chips on the contact substrates based on a defined wafer arrangement of the chips to produce any distribution of chips on the contact substrates in the contacting.
• the device for receiving the transfer substrate comprises a web guide device for guiding a transfer substrate designed as a film web and is provided with a feed device for positioning the individual chips in accordance with the arrangement of the chips on the contact substrate.
• a web guide device for guiding a transfer substrate designed as a film web and is provided with a feed device for positioning the individual chips in accordance with the arrangement of the chips on the contact substrate.
• Fig. Ia and Ib a basic representation of the method principle
• FIG. 2 shows a method variant relating to the implementation of the method based on a transfer substrate designed as a "sawing foil"
• FIG. Fig. 3 shows a variant of the method for carrying out the
• Fig. 4 is an enlarged view of the processes in carrying out the method directly in
• FIG. 6 shows the implementation of the method based on a transfer substrate designed as a "sawing film” with a schematic representation of a transfer head in plan view.
• a transfer tool 10 comprising a laser device designed as an optical fiber 11, which simultaneously serves as a pressure device 12 in the present case.
• the optical fiber 1 1 is guided in a channel 14 of a tool body 13.
• the lower end face of the tool body 13 serves to form a contact substrate receiving means 15, on which by means of vacuum openings 16, a film 17 is held.
• the film 17 is equipped with a plurality of chips 18, which are adhesively held on the film 17 by means of a not shown here, between a back side 19 of the chip 18 and the film 17 formed adhesive layer.
• 1 b shows the transfer tool 10 in a position immediately above a contact substrate 20, in a transfer configuration, in which the chip 18 arranged opposite a free contact end 21 of the optical fiber 1 1 bridges one between a contact surface 22 of the chip 18 and a contact surface 23 of the contact substrate 20 formed contact gap 24 to the plant the contact substrate 20 is urged.
• the serving simultaneously in the present embodiment as a pressure device 12 optical fiber 11 is moved against the back side 19 of the chip 18.
• the chip 18 is energized with laser energy through the foil 17 which is transparent to laser energy, so that heating takes place of the chip 18 is the result.
• the adhesive forces acting in the adhesive layer between the back side 19 of the chip 18 and the film 17 are reduced and the adhesive forces of a temperature-curable adhesive material placed between the contact surfaces 22 and 23 are activated. This results in a permanent mechanical connection between the chip 18 and the contact substrate 20 while simultaneously releasing the connection between the film 17 and the back side 19 of the chip 18.
• FIG. 2 and 3 show two possible variants of the method or devices which can be used in this process, wherein in FIG. 2 a method variant based on a separating foil 25 formed by a "sawing foil", which serves as a transfer substrate, is carried out by means of a first transfer device 87 3 shows a method variant in which the method is carried out by means of a second transfer device 88 based on a transfer substrate designed as a film web 26.
• FIG. 2 In order to simplify the illustration, only one transfer tool 27 is shown in FIG. 2, which acts on the separating film 25 at the rear.
• a front side 28 of the separating film 25 On a front side 28 of the separating film 25 is a plurality of chips 18 in so-called wafer assembly 29, ie the chips 18 are located exactly in the relative arrangement, which adjusts as a result of a singulation process for producing individual chips 18 from a wafer.
• a circumferential support frame 31 which is provided at defined intervals with vacuum openings 16 which allow holding the film 25 in the position shown in Fig. 2.
• a contact gap 32 Below the wafer 18 arranged on the separating film 25 chips 18 is spaced by a contact gap 32, a contact substrate 33 which is disposed on a contact substrate receiving means 34.
• the transfer substrate is not formed as a separating film 25 but as a film web 26, which is moved over a web guide device 36 past a film web system 37.
• the arrangement of chips 18 on the film web 26 can take place in such a way that the entire wafer surface of the wafer is provided with an adhesive application prior to singulation. After separation has taken place, the chips 18 disposed in wafer arrangement 29 can then be applied to the film web 26 by means of the adhesive application arranged on their rear side 19.
• the web guiding device 36 For transporting the film web 26, the web guiding device 36 has a film web supply reel 38, a film web take-up reel 39 and two deflecting rollers 40, 41, which allow the film web 26 to be guided parallel to the film web installation device 37.
• the Folienbahnstromein- device 37 includes a plurality of vacuum openings not shown here, which is an investment of the film web 26 for setting a defined contact gap 35 between the film web 26 and a
• the contact substrate web installation device 43 is likewise provided with a multiplicity of vacuum openings 16 which serve for the defined contact of the contact substrate web 42 with the contact substrate web installation device 43.
• a transfer head 44 comprising a plurality of transfer tools 45, 46, which are received via a head rail 51, in the tool housing 47 of the transfer tools 45, 46 are defined, arranged in a composite arrangement for forming the transfer head 44 , In the
• Tool bodies 47 of the transfer tools 45, 46 each receive a longitudinally guided feed element 48, which in each case protrudes into feed recesses 49 of the film web installation device 37.
• FIG. 4 shows a transfer tool 45, 46 during the execution of the feed movement in the direction of a contact substrate 50 arranged on the contact substrate web 42.
• the feed movement is carried out by the movement of the tool body 47 of the transfer tool 45, 46.
• the feed element 48 guided longitudinally displaceably in the tool body 47 is supported on the tool body via a spring device 54 arranged in the tool body 47. off at 47.
• the contact substrate 50 is provided with an anisotropic adhesive material 61 in the region of its contact surface 58 having two substrate contacts 56, 57, in which pressure contacts are formed between chip contacts 59, 60 and the substrate contacts 56 , 57 train senior contact bridges.
• the adhesive material 61 is cured with permanent fixation of the abovementioned contact bridges.
• the adhesive bond formed by the adhesive layer 55 between the back 19 of the chip 18 and the film web 26 has been released, so that after a return movement of the transfer tool 45, 46 in the direction of the arrow 89, the contact between the chip 18 and the contact substrate 50 is maintained and an advancing movement of the film web 26 and the contact substrate web 42 for carrying out a subsequent transmission and contacting operation can take place.
• FIG. 5 shows a plurality of transfer tools 62 to 67, which are combined to form a series arrangement 69 by means of a common headrail 68.
• the individual transfer tools 62 to 67 correspond in their construction and in their function to the transfer tools 45, 46 already explained above with reference to FIGS. 3 and 4.
• a total of six transfer tools 62 to 67 are combined to form the row arrangement 69.
• adjusting devices 76 are provided, both the relative orientation of the longitudinal axes of the transfer tools 62 to 67 with each other and a uniform height adjustment of the transfer tools 62 to 67 for Forming a uniform distance a between a contact tip 92 of the transfer tools 62 to 67 and a reference surface F allow.
• the separating film 25 consists of a so-called "sawing film.”
• the separating film 25 is one and the same film used to produce a plurality of individual chips by sawing a wafer
• the singulated chips are located in a so-called wafer arrangement on the sawing foil.
• Separation film 25 to use as a transfer substrate for performing the method.
• a transfer head 78 is used for the simultaneous transfer of the plurality of chips in wafer arrangement, which is indicated in Fig. 6 only by schematic representation of the individual optical fibers 11, which are assigned to the transfer tools arranged in series arrangements 69 to 74.
• contact substrate web 79 On the contact substrate arrangements 80 with a plurality of contact substrates (not further illustrated here) are arranged, which may correspond with respect to the arrangement of their substrate contacts of the wafer arrangement of the chips predetermined arrangement of the chip contacts or may deviate therefrom.
• the contact substrate arrangements 80 can be moved by means of suitable transport devices 81, 82 by advancing the contact substrate web 79 in the feed direction 77 under the wafer arrangement on the singling film 25.
• the entire wafer arrangement of chips in a transfer and contacting can be transferred to the contact substrates of the contact substrate assembly 80, analogous to the representation in Fig. 4.
• the substrate contacts of the contact substrate assembly and the chip contacts of Chips arranged in a wafer arrangement can also be used to transfer and contact the chips individually or in groups, with the appropriate relative positioning of the chips to the contact substrates being able to take place via a corresponding control device 83 with axes of movement 84 and 85.
• the control device 83 can be controlled by means of camera devices 86 combined with an image processing device.
• a thermally activatable adhesive application between the chip and the contact substrate can be provided in the exemplary embodiment illustrated in FIG. 6, as already explained with reference to FIG. 4.
• a material which contains activated carbon fibers to produce the conductivity is used as the adhesive material.
• the implementation of a LötWallet ist done, for example, a Lötmaterial Huawei can be provided on the chip contacts and / or the contact substrate contacts. It is also possible to provide the chip contacts with a contact metallization, which consists of a current-deposited nickel-gold coating.

Landscapes

• Wire Bonding (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Priority Applications (6)

Applications Claiming Priority (2)

Publications (2)

Family

ID=37073818

Family Applications (1)

Country Status (7)

Cited By (2)

Families Citing this family (33)

Family Cites Families (17)

• 2006
  • 2006-04-10 JP JP2008504617A patent/JP5964005B2/ja not_active Expired - Lifetime
  • 2006-04-10 WO PCT/DE2006/000628 patent/WO2006105782A2/de not_active Ceased
  • 2006-04-10 EP EP06742229.5A patent/EP1869701B1/de not_active Expired - Lifetime
  • 2006-04-10 US US11/910,771 patent/US9401298B2/en active Active
  • 2006-04-10 KR KR1020077025897A patent/KR101250186B1/ko not_active Expired - Lifetime
  • 2006-04-10 CN CN2006800111703A patent/CN101164150B/zh not_active Expired - Lifetime
  • 2006-04-10 DE DE112006001493T patent/DE112006001493A5/de not_active Withdrawn

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