WO2006103854A1 - 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 - Google Patents
吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 Download PDFInfo
- Publication number
- WO2006103854A1 WO2006103854A1 PCT/JP2006/303360 JP2006303360W WO2006103854A1 WO 2006103854 A1 WO2006103854 A1 WO 2006103854A1 JP 2006303360 W JP2006303360 W JP 2006303360W WO 2006103854 A1 WO2006103854 A1 WO 2006103854A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- coating layer
- polishing
- adsorption
- self
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
- B23Q3/088—Work-clamping means other than mechanically-actuated using vacuum means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Definitions
- the present invention relates to an adsorption device that holds an adherend by vacuum adsorption of an adherend such as Ueno, and the like, a polishing apparatus using the adsorption device, a semiconductor device, and a semiconductor device manufacturing method.
- a suction device for holding a deposit by vacuum suction of a wafer a plurality of convex portions of a plurality of pin-shaped or ridges I having a pin shape or a ridge are formed on the suction surface side such that their tip surfaces have the same height.
- An adsorption device is known (for example, JP-A-2002-21714, JP-A-10-50810).
- the concave force between the convex portions S negative pressure with the tip end face of each convex portion in contact with the concave portion holds the wafer flat along the distal end face of each convex portion.
- Ru the tip surface of each convex portion is an adsorption surface that contacts and is in contact with the wafer.
- the wafer deforms and bulges in the vicinity of the portion, causing various problems.
- the wafer is planarized and polished ⁇
- the foreign matter will cause excessive polishing near the place where it has been polished S, which is a fatal defect.
- the adsorption surface of the adsorption device is cleaned, but it is impossible to completely remove the foreign matter.
- the machine area of the wafer and the suction surface is limited to the area of the tip end surface of the convex portion. As a result, the probability that foreign matter such as dust or abrasive lj intervenes between the wafer and the suction surface is greatly reduced, which is very preferable.
- a nonwoven fabric having a thickness of several hundred / im different is used as a woven fabric, and this woven fabric is bonded on the tip surface of each convex portion of the woven fabric with a double-sided adhesive tape. ing. And, the case where the non-woven fabric is disposed only on the tip end face of each of the convex portions (FIG. 1 of JP-A-2004-259792), and the non-woven fabric completely covers the concave portion between the self-protruding convex portions.
- the forces applied to the respective non-woven fabrics may be different from each other (in such a case, for example, in the wafer polishing and polishing, the wafer and the polishing pad And the relative motion between them)), which results in relatively large differences in the thickness of each part of the non-woven fabric, which causes the wafer to squeeze, from this point of view , It turned out that the flatness of the wafer was lowered.
- the non-woven fabric is disposed only on the tip end face of each of the convex portions, and for that reason, the wafer may not be warped. It is possible to place the non-woven fabric only on the tip end face of each convex part. Above, it is very difficult in practice.
- the non-woven fabric is provided to reduce the protrusion of the wafer in the vicinity of the place where the foreign matter is present.
- this attempts to increase the flatness of the wafer there is a possibility that the flatness of the wafer may be reduced due to the non-woven fabric regardless of foreign matter.
- the present invention has been made in view of such circumstances, and an object thereof is to reduce the influence of foreign matter, and further, to create an adsorption device capable of further enhancing the flatness of an adherend in an adsorption state.
- Another object of the present invention is to provide a polishing apparatus capable of preventing partial overpowering I polishing.
- the object of the present invention is to provide a method of manufacturing a body device capable of manufacturing a body device with improved yield and at low cost as compared with the conventional method of manufacturing a semiconductor device, and a body device of tm cost.
- the adsorption device is such that in the adsorption device for holding the tirts adhesion by vacuum adsorption of the attachment, the tip faces have substantially the same height.
- At least one lower layer is formed between the coating layer and the adsorption layer.
- the coating layer is formed by polishing a region corresponding to the tip end surface of the plurality of convex portions in the surface region.
- the coating layer is obtained by polishing a region corresponding to the tip end surface of the plurality of convex portions in the surface region, and the loose coating layer after polishing and the lower coating layer are combined. It is preferable that the thickness is 4 0 ⁇ m or more and 9 O / in or less. It is preferred that the knit coating layer be composed of odor.
- At least the outermost layer of the coating layer is preferably made of a polyurethane resin, an acrylic resin or a fluorine-containing rubber.
- the pencil hardness by J I S 5 6 0 0 5-4 of the self-coating layer is approximately H.
- the plurality of projections have a pin shape or a ridge.
- the polishing apparatus by applying a load between the polishing body and the object to be polished held by the above-described adsorption device, the displacement between mm ⁇ and the material to be polished is relatively moved. It is configured to polish the skin Liste
- the method of manufacturing a housing device according to the present invention includes the step of planarizing the surface of the body using the polishing apparatus.
- a body device according to the present invention is manufactured by this semiconductor device manufacturing method. According to the present invention as described above, it is possible to reduce the influence of foreign matter, and to use an adsorption device capable of further enhancing the flatness of 3 ⁇ 4 P and adherents in the adsorption state.
- FIG. 1 is a cross-sectional view and a partially enlarged cross-sectional view showing an adsorption device according to a first embodiment of the present invention.
- FIG. 2 is a plan view of the suction device shown in FIG.
- FIG. 3 is an HWf plan view schematically showing the suction device shown in FIG. 1 with a wafer being sucked.
- FIG. 4 is a top cross-sectional view schematically showing a state in which a wafer is adsorbed by the adsorption device according to the comparative example.
- FIG. 5 is a plan view showing a suction device according to a second embodiment of the present invention.
- FIG. 6 is a schematic view of a polishing apparatus according to a third embodiment of the present invention.
- FIG. 7 is a flowchart showing a semiconductor device manufacturing process. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 (a) is a WTr elevation view showing a suction device 1 according to a first embodiment of the present invention.
- Figure 1 (b) is an enlarged cross-sectional view of part of Figure 1 (a).
- FIG. 2 is a schematic plan view of the suction device 1 shown in FIG. However, in FIG. 2, illustration of the coating layer 3 and the base layer 4 is omitted.
- the suction device 1 is configured as a flexible wafer chuck that suctions and holds a wafer W as a substance to be sucked.
- this adsorption device 1 is provided with a disk-shaped adsorption particle 2, a coating layer 3, and a lower 3 ⁇ 4 S 4.
- the adsorption residue 2 is made of, for example, a ceramic such as alumina or stainless steel, and has an Oka I crucible.
- a large number of pin-shaped convex portions 2 a are formed on the upper surface side (adsorption surface side) of the adsorption base material 2. These convex portions 2 a are evenly distributed over the entire top surface of the adsorption St 2 (flat: for example, 1 / im 3 ⁇ 4 3 ⁇ 4).
- a convex portion 2b having an annular convex shape is also formed along the outer periphery.
- the heights of the upper surfaces of the convex portions 2a and 2b are all the same, and the upper surfaces of the convex portions 2a and 2b are positioned in the same plane with high accuracy.
- the height of the protrusions 2 a and 2 b is about several hundred ⁇ m
- the width of the protrusions 2 a and 2 b in the illustrated example, the force for making the shape of the protrusions 2 a in a square shape in plan view
- the diameter of the convex portion 2 a is 500.degree.
- the pitch of the convex portions 2a is set to an appropriate value so as not to be too large.
- the communication port 6 is opened at a plurality of locations in the recess 5 between the convex portions 2 a and 2 b at the upper surface side of the suction fit 2.
- the coating layer 3 and the lower layer 4 are formed so as not to block the communication port 6.
- a connection port 7 is opened on the lower surface of the suction hole 2.
- Figure 1 (a) shows a cross section along the line A-A 'in Figure 2. However, in this cross section, the communication port 6, the connection port 7 and the passage 8 are shown by f: in order to facilitate 2 ⁇ 4 ⁇ in FIG. 1 (a).
- the coating layer 3 is coated on the upper surface side (Ueno, W side) of the adsorptive substrate 2 through the underlayer 4, has elasticity, and is composed of one or more layers. There is.
- the coating layer 3 may be composed of a single layer, or may be composed of laminated multiple mils. Also, the coating layer 3 can be made up of odor, not necessarily limited to this! /.
- pencil hardness of the coating layer 3 according to JIS K 5 6 0 5-4 Is preferred to be approximately H.
- the coating layer 3 can be made of, for example, a polyurethane resin, an acrylic resin, or a fluorine-based rubber.
- the outermost layer is composed of one of the polyuretan resin, the acrylic resin and the fluororubber, and the layers other than the layer are composed of other materials. Layers other than layers may also be made of the same material as the layer.
- the chemical resistance, the generation prevention property of acid gas, etc. are required:
- the material of the coating layer 3 may be selected appropriately according to the requirement: 131.
- the thickness of the portion of the coating layer 3 on the upper surface of the convex portions 2 a and 2 b is preferably relatively thin such as several tens of ⁇ m 3!.
- the thickness of each part will be relatively different, and this will cause Ueno and W to swell.
- the thickness of the portion on the upper surface of the convex portions 2 a and 2 b in the coating layer 3 is made relatively thin, the thickness of each portion is not so different. Wafer w can reduce waviness.
- Underlayer 4 is formed on Lower leakage 4 may be a single layer, or even double strokes.
- a material suitable for enhancing the adhesion between the two is selected. In some cases, the following is not necessarily required.
- a region of the surface region of the coating layer 3 corresponding to the upper surface of each of the convex portions 2 a and 2 b (a region of the portion on the upper surface of the convex portions 2 a and 2 b in the coating layer 3)
- the polishing process is applied.
- This polishing process can be performed, for example, as a lapping process or a lapping process.
- the plane is made, for example, 1 ⁇ 13 ⁇ 5.
- the area of the coating layer 3 corresponding to the upper surface of each of the convex portions 2 a and 2 b is polished to increase its flatness, the waviness of the wafer W can be further reduced. It is preferable because it can further enhance the surface area of the adsorption-held weno, w.
- a beadless non-bead coating material is used as the material of the coating layer 3 (in particular, the material of the layer to be the outermost layer after polishing processing).
- a beadless non-bead coating material is used as the material of the coating layer 3 (in particular, the material of the layer to be the outermost layer after polishing processing).
- bead-based coating materials containing beads are generally used for reducing ⁇ , but the bead particle size is relatively large, and each bead has a dispersion in particle size. Because it is relatively large, the polishing process may cause the beads to remain hemispherically projecting or to form hemispherical depressions as removal traces of the beads, which makes it difficult to increase the flatness ⁇ J ⁇ It is for.
- a bead-based coating material containing beads is used.
- the suction ax 2 having the above-mentioned structure.
- the height of the projections 2 a and 2 b is 1 ⁇ m 3 ⁇ 4 ⁇ 4s
- the height of the projections 2 a and 2 b is several hundred ⁇ m 3 ⁇ 4 3 ⁇ 4
- the width of the projections 2 a and 2 b is 5 0 0
- the pitch of the mi convex portion 2 a is set to 8 0 0 ⁇ ⁇ 3 ⁇ 4 ⁇ 4 ⁇ 4.
- a primer to be the base layer 4 is applied to the upper surface side of the adsorptive substrate 2 with a spray gun or the like, and the volatile component of the primer is volatilized by causing the primer to comfort by a predetermined amount.
- Lower leakage 4 thickness For example, 10 ⁇ ⁇ ! It shall be ⁇ 20 ⁇ m 3 ⁇ 4g.
- the thickness of coating layer 3 in this state is, for example, 80 ⁇ !
- the total of the lower 4 and the coating layer 3 in this state is, for example, 12 ⁇ m ⁇ l.
- the coating layer 3 Flatten the three areas of interest.
- the total UK? Of the coating layer 3 and the base layer 4 in the relevant region after this planarization and polishing is, for example, preferably 40 im to 9 ⁇ , more preferably 60 ⁇ to 80/2 m. Les.
- the force applied to each part of the upper surface of 2 b may be mutually different, resulting in a relatively large difference in the thickness of each apportionment, resulting in Ueno, W
- the total AMI is preferred to be 90 ⁇ m or less, because it swells.
- the suction device 1 is completed.
- FIG. 3 is a schematic view showing the adsorption device 1 shown in FIG. 1 with the Ueno and W adsorbed.
- FIG. 3 (a) shows the case where there is no foreign matter 20 such as dust between the wafer W and the suction surface
- FIG. 3 (b) shows the case where there is a foreign matter 20 between them.
- the lower surface of the foreign substance 20 does not intervene between the wafer W and the coating layer 3, and the lower surface of the wafer W is maintained flat.
- the coating layer 3 is supported by the convex portions 2a and 2b having a rigid ridge having the same height on the upper surface.
- the lower surface of the Ueno, W is held flat even in the case where the foreign matter 20 of, for example, im order intervenes between the Ueno, W and the coating layer 3 . This is This is because the foreign matter 20 tends to be buried in the coating layer 3 due to the elasticity of the coating layer 3.
- the total film thickness of the coating layer 3 and the foundation layer 4 in the relevant area after the planarization and polishing be at least ⁇ m.
- adsorption device according to a comparative example to be compared with the adsorption device 1 according to the present embodiment.
- This comparative example is an adsorption apparatus in which the lower part of the adsorption apparatus 1 shown in FIG. 1 is removed and the coating layer 3 is removed.
- Fig. 4 is a schematic view of the adsorption device according to this comparative example, showing the adsorption state of Ueno and W.
- Fig. 4 is a plan view showing the presence of foreign matter 20 between the wafer W and the adsorption surface. ing.
- the wafer W when the foreign matter 20 intervenes between the Ueno W and the suction surface, the wafer W is deformed in the vicinity of the location, whereas the wafer W is deformed in this embodiment.
- the wafer W even if foreign matter 20 is interposed between the wafer W and the suction surface, the wafer W is not deformed by the foreign matter 20, and the lower surface (surface to be attracted) of the wafer w can be made flat. it can.
- the influence of the foreign matter 20 can be reduced, and the flatness of the wafer W in the 55 mounted state can be improved.
- the force for sucking in the foreign matter 20 to the back surface (lower surface) of the wafer w becomes weak. Later, when cleaning the wafer W and W, it becomes easy to remove the foreign matter 20 from the wafer W, and the cleaning becomes easy.
- the shape of the wafer W is not transferred to the upper surface of the wafer W, so that the height of the flat surface of the wafer U in the suction state (especially, the surface of the opposite surface (upper surface) of the surface of the wafer W) it can.
- the coating layer 3 since the coating layer 3 has elasticity and has a strain, the wafer w is protected by the coating layer 3 during loading and unloading of the wafer w. As in the comparative example shown in 4, coating layer 3 force is provided Compared with the scale, the back surface of Ueno, w is less likely to be damaged during loading and unloading.
- the coating layer 3 is formed instead of the non-woven fabric adopted by the technique of Japanese Patent Application Laid-Open No. 2 0 5 2 5 7 9 2 2.
- the thickness of the ring layer 3 can be made relatively thin, and the thickness is made relatively thin. Even if the forces applied to the respective portions of the upper surface of the convex portions 2a and 2b in the coating layer 3 are different from each other, the thicknesses of the respective defects are not so different. The undulation of W can be reduced, and also from this point of view, it is possible to enhance the flatness of the wafer W in the adsorption state.
- the coating layer 3 is coated on the suction base 2. Coating layer 3 is difficult to peel off due to good adhesion.
- the adsorption device 1 if polyurethane resin, acrylic resin or fluorocarbon rubber is used as the material of the base layer of the coating layer 3, the number of wafers is high. Even if the wafer W is suctioned and the wafer W is polished by a polishing apparatus as shown in FIG. 6 described later, the wafer W becomes difficult to slip at.
- the adsorption device 1 when polyurethane resin, acrylic resin or fluorocarbon rubber is used as the material of the base layer of the coating layer 3, the mechanical characteristics are utilized. It also becomes possible to clean the coating layer 3 by a simple method using a brush or the like.
- Second embodiment when polyurethane resin, acrylic resin or fluorocarbon rubber is used as the material of the base layer of the coating layer 3, the mechanical characteristics are utilized. It also becomes possible to clean the coating layer 3 by a simple method using a brush or the like.
- FIG. 5 is a plan view showing a suction device 21 according to a second embodiment of the present invention, which corresponds to FIG. Elements in FIG. 5 that are the same as or correspond to elements in FIGS. 1 and 2 are assigned the same reference numerals, and redundant descriptions thereof will be omitted.
- the coating layers 3 and 4 are omitted from illustration.
- the adsorption device 21 according to the present embodiment differs from the adsorption device 1 according to the first embodiment in that the upper surface edge j of the adsorption base material 2 is replaced with the pin-shaped convex portion 2 a.
- a plurality of annular convex portions 2c are formed, and the f 3 ⁇ 4Of position of the communication port 6 is changed accordingly.
- the plurality of convex portions 2 c are concentric with the convex portion 2 b forming an annular convex line disposed on the outer peripheral portion. It is arranged to become.
- the coating layer 3 is coated on the upper surface side of the adsorptive substrate 2 via the underlayer 4 including the upper surface of 2 c.
- the pattern of the convex part on the suction pressure 2 is not limited to the pattern of the suction device 1, 21.
- the convex portion 2c shown in FIG. 5 may be formed in a pattern which is interrupted in the middle of the circumferential direction (for example, every 90 °).
- the polishing apparatus includes a polishing tool 51 and a lower side of the polishing tool 51. Between the wafer W and the polishing tool 51 via the wafer chuck 52 that holds the wafer U as a workpiece to be polished and the supply path (not shown) formed on the polishing tool 51. It is equipped with a feeding unit (not shown) for feeding (slurry).
- the polishing tool 51 can be rotated, moved up and down, and oscillated (reciprocated) as shown by arrows a, b and c in FIG. 6 by using an electric motor etc. as an activator and not shown. ing.
- the wafer chuck 52 can be rotated as shown by an arrow t in FIG. 6 by a rotating table 53 (not shown) using an electric motor or the like as an actuator.
- the connection port 7 (see FIG. 1) of the wafer chuck 52 is connected to a vacuum pump (not shown) via a passage in the rotation table 53.
- the polishing tool 51 has a polishing body 54 formed of a polishing pad or the like, and a surface (upper surface in FIG. 6) opposite to the polishing surface (lower surface in FIG. 6) of the polishing body 54. And.
- any of the suction devices 1 and 21 according to the first and second embodiments described above is used as the wafer check 52.
- polishing of the wafer W While the polishing tool 51 swings while rotating, the stone polishing body 54 of the polishing tool 51 is pressed against the upper surface of the wafer W on the wafer chuck 52 with a predetermined pressure (load).
- the wafer chuck 52 is rotated by the rotating tape 'nore 53 to rotate the wafer W and the wafer W so that relative movement is performed between the wafer W and the polishing tool 51.
- it is supplied between the wafer W and the polishing body 54 from the grinding and polishing IH co-feeding unit, and is diffused therebetween to polish the surfaces to be polished of Ueno and W.
- the coating layer 3 can be made relatively thin. Even if the forces applied to the portions on the upper surface of the convex portions 2a and 2b in the coating layer 3 are different from each other, the thickness of the respective awards is not so different. The undulation can be reduced, and this point force can also improve the flatness of the wafer W in the adsorption state. If Ueno and W swell, the wafer W is partially over-polished and polished, and the wafer W becomes defective. Therefore, according to the present embodiment, from this point as well, it is possible to prevent partial over-exposure of the wafer W and W, and the yield of the wafer W is improved. Fourth embodiment, from this point as well, it is possible to prevent partial over-exposure of the wafer W and W, and the yield of the wafer W is improved. Fourth embodiment
- FIG. 7 is a flowchart showing a body device manufacturing process.
- the semiconductor device manufacturing process is started, and first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. Proceed to step S 2 0 1 to S 2 0 4 according to your selection.
- Step S201 is an oxidation process that oxidizes the surface of the silicon wafer.
- Step S202 is a CVD process in which a silicon Ueno is formed by CVD or the like and a fabric is formed on the surface.
- Step S203 is an electrode forming step of forming an electrode on a silicon wafer by a process such as vapor deposition.
- Step S204 is an ion implantation step for implanting ions into a silicon wafer.
- step S 2 0 9 Go to to determine the strength of the CMP process. If not, go to step S 2 0 6 1 Do ⁇ go to step S 2 0 5.
- Step S 2 05 is a CMP step, in which the interlayer insulating film or the metal film on the surface of the semiconductor device is planarized using the polishing apparatus according to the present invention or the polishing method according to the present invention. Formation of damascene by polishing etc. is performed.
- Step S 2 0 6 is as photolithographic. In this process, a resist is applied to the silicon wafer, a circuit pattern is printed on the silicon wafer by exposure using an exposure apparatus, and a developing power of the exposed silicon wafer is performed. Further, the next step S 2 0 7 is an etching step in which a portion other than the developed resist image is etched away, then the resist is peeled off, and the etching is finished to remove the unnecessary resist.
- step S 2 0 8 it is judged whether all the necessary steps have been completed, and if complete, return to step S 2 0 0 and repeat the previous steps to repeat the circuit pattern on the silicon wafer. Is formed. If it is determined in step S 2 0 8 that all steps have been completed, it becomes end.
- a body device manufactured by the method of manufacturing a housing device according to the present invention is a body device having a high yield and being inexpensive.
- the polishing apparatus according to the present invention may be used in the CMP process of the body device manufacturing process other than the semiconductor device manufacturing process. As mentioned above, although each embodiment of this invention was described, this invention is not limited to these.
- the adsorption apparatus according to the present invention can be used in a fine exposure apparatus (stepper), a spin coat apparatus, and various other apparatuses.
- the object to be adsorbed of the adsorption device according to the present invention is not limited to a wafer, and may be configured to adsorb various substrates other than the wafer and other objects to be adsorbed.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/887,211 US8371564B2 (en) | 2005-03-28 | 2006-02-17 | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
KR1020077024747A KR101290845B1 (ko) | 2005-03-28 | 2006-02-17 | 흡착 장치, 연마 장치, 반도체 디바이스 및 반도체디바이스 제조 방법 |
KR1020137000770A KR101367010B1 (ko) | 2005-03-28 | 2006-02-17 | 흡착 장치, 연마 장치, 반도체 디바이스 및 반도체 디바이스 제조 방법 |
US13/750,874 US8662485B2 (en) | 2005-03-28 | 2013-01-25 | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005090297 | 2005-03-28 | ||
JP2005-090297 | 2005-03-28 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/887,211 A-371-Of-International US8371564B2 (en) | 2005-03-28 | 2006-02-17 | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
US13/750,874 Continuation US8662485B2 (en) | 2005-03-28 | 2013-01-25 | Suction apparatus, polishing apparatus, semiconductor device, and method of manufacturing a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006103854A1 true WO2006103854A1 (ja) | 2006-10-05 |
Family
ID=37053122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/303360 WO2006103854A1 (ja) | 2005-03-28 | 2006-02-17 | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8371564B2 (ja) |
JP (1) | JP2006305713A (ja) |
KR (2) | KR101290845B1 (ja) |
TW (1) | TW200636905A (ja) |
WO (1) | WO2006103854A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016508676A (ja) * | 2013-02-28 | 2016-03-22 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 低熱膨張係数の上部を備えたワーク受台構造 |
CN106736762A (zh) * | 2017-02-15 | 2017-05-31 | 珠海格力智能装备有限公司 | 吸盘夹具和显示屏边框加工设备 |
CN107649889A (zh) * | 2017-10-27 | 2018-02-02 | 无锡智谷锐拓技术服务有限公司 | 一种机械加工用缓冲工作台 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006305713A (ja) * | 2005-03-28 | 2006-11-09 | Nikon Corp | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
US20080221880A1 (en) * | 2007-03-07 | 2008-09-11 | Cerra Joseph P | Mobile music environment speech processing facility |
WO2008155860A1 (ja) * | 2007-06-21 | 2008-12-24 | Hitachi Plasma Display Limited | ダイコータ装置、プラズマディスプレイパネル用基板構体の製造方法 |
JP5074125B2 (ja) * | 2007-08-09 | 2012-11-14 | リンテック株式会社 | 固定治具並びにワークの処理方法 |
JP5311190B2 (ja) * | 2008-05-14 | 2013-10-09 | 株式会社ニコン | 吸着装置の製造方法および研磨装置 |
JP4639313B2 (ja) * | 2009-01-08 | 2011-02-23 | 日本フッソ工業株式会社 | フッ素樹脂コーティングプレート及び吸着ステージ |
JP4761334B2 (ja) * | 2009-02-23 | 2011-08-31 | 株式会社ソディック | 着色セラミック真空チャックおよびその製造方法 |
JP5316172B2 (ja) * | 2009-04-02 | 2013-10-16 | 株式会社安川電機 | ウェハ吸引パッド及びそれを備えたプリアライナ |
DE102009018434B4 (de) * | 2009-04-22 | 2023-11-30 | Ev Group Gmbh | Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten |
DE102009044305A1 (de) * | 2009-10-21 | 2011-05-05 | Fooke Gmbh | Verfahren zum Halten und Bearbeiten eines Werkstückes mit Spannplatte, sowie Vorrichtung zum Aussteifen eines Werkstückes mit Spannplatte |
EP2513960A4 (en) * | 2009-12-15 | 2014-10-08 | Solexel Inc | MOBILE EMPTY MEDIA FOR PROCESSING A FINE PLATE |
NL2007834A (en) * | 2010-12-23 | 2012-06-27 | Asml Netherlands Bv | Lithographic apparatus and removable member. |
WO2012103967A1 (en) * | 2011-02-01 | 2012-08-09 | Asml Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
JP5999972B2 (ja) * | 2012-05-10 | 2016-09-28 | 株式会社ディスコ | 保持テーブル |
EP2927947B1 (en) * | 2012-11-28 | 2020-05-06 | Kyocera Corporation | Placement member and method for manufacturing same |
WO2014126896A1 (en) * | 2013-02-13 | 2014-08-21 | Entegris, Inc. | Vacuum chuck with polymeric embossments |
JP6148084B2 (ja) * | 2013-06-26 | 2017-06-14 | 京セラ株式会社 | 吸着部材 |
CN103811332B (zh) * | 2014-02-14 | 2016-05-25 | 北京京东方显示技术有限公司 | 一种干法刻蚀设备的下部电极基台和干法刻蚀设备 |
SE539408C2 (en) * | 2015-10-21 | 2017-09-19 | Rollquett Patent Ab | Label picking arrangement and method for picking labels |
CN107443200B (zh) * | 2016-06-01 | 2019-06-25 | 中国科学院大连化学物理研究所 | 一种铣磨用真空吸附调节台 |
JP6711721B2 (ja) * | 2016-07-27 | 2020-06-17 | 日本特殊陶業株式会社 | 真空吸着部材 |
US10149565B2 (en) | 2016-10-04 | 2018-12-11 | Sonal Dave | Reconfigurable hanger |
EP3305415B1 (en) * | 2016-10-06 | 2021-04-28 | Exel Industries | Method and installation for painting a surface of a component with a pattern |
CN106737064B (zh) * | 2016-12-27 | 2018-09-11 | 嘉兴高维智控有限公司 | 全自动蓝宝石抛磨设备 |
CN106625064B (zh) * | 2016-12-27 | 2018-07-10 | 嘉兴高维智控有限公司 | 蓝宝石片抛磨装置 |
GB2559982B (en) * | 2017-02-23 | 2021-11-24 | Asm Assembly Systems Singapore Pte Ltd | Tooling support and workpiece support assembly |
JP6910723B2 (ja) * | 2017-08-22 | 2021-07-28 | 株式会社ディスコ | 研削方法 |
CN108637879A (zh) * | 2018-07-04 | 2018-10-12 | 深圳市鑫万福珠宝首饰有限公司 | 一种蓝宝石加工抛光装置 |
IT201900013011A1 (it) * | 2019-07-26 | 2021-01-26 | F O M Ind S R L | Macchina per la lavorazione di profilati di alluminio, leghe leggere, pvc o simili |
CN110919429A (zh) * | 2019-12-09 | 2020-03-27 | 常熟焱智交通设备零部件有限公司 | 一种用于散热体加工的便捷式装配体 |
US11638882B2 (en) * | 2020-04-26 | 2023-05-02 | Shantou Chenghai Lichengfeng Plastic Products Factory | Wall-climbing vehicle and bottom cover of such vehicle |
TWI752729B (zh) * | 2020-11-18 | 2022-01-11 | 華憬科技有限公司 | 表面處理裝置 |
US20220314595A1 (en) * | 2021-03-31 | 2022-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chuck, lamination process, and manufacturing method of semiconductor package using the same |
WO2023197237A1 (zh) * | 2022-04-14 | 2023-10-19 | 华为技术有限公司 | 研磨台、研磨头、研磨设备及研磨方法 |
CN115056045B (zh) * | 2022-06-30 | 2023-10-20 | 成都泰美克晶体技术有限公司 | 一种晶圆单面抛光装置及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6373625A (ja) * | 1986-09-17 | 1988-04-04 | Shin Etsu Handotai Co Ltd | 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 |
JPH0691463A (ja) * | 1992-09-14 | 1994-04-05 | Hitachi Ltd | 板状体の保持装置 |
JPH10229115A (ja) * | 1997-02-14 | 1998-08-25 | Sumitomo Metal Ind Ltd | ウェハ用真空チャック |
JP2004259792A (ja) * | 2003-02-25 | 2004-09-16 | Nikon Corp | 吸着装置、吸着装置用シート、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1771538A (en) * | 1927-03-30 | 1930-07-29 | Du Pont | Coated product |
NL94856C (ja) * | 1954-12-30 | 1900-01-01 | ||
US3627338A (en) * | 1969-10-09 | 1971-12-14 | Sheldon Thompson | Vacuum chuck |
US3762939A (en) * | 1971-07-02 | 1973-10-02 | Gen Electric | Method of protecting a metallic surface from corrosion and resultant article |
US4183545A (en) * | 1978-07-28 | 1980-01-15 | Advanced Simiconductor Materials/America | Rotary vacuum-chuck using no rotary union |
US4778326A (en) * | 1983-05-24 | 1988-10-18 | Vichem Corporation | Method and means for handling semiconductor and similar electronic devices |
JPS63210148A (ja) * | 1987-02-26 | 1988-08-31 | Nikko Rika Kk | 真空チヤツク用プラスチツクス焼結体 |
DE8703223U1 (ja) * | 1987-03-03 | 1987-04-16 | Modellbau Paul Apitz, 7913 Senden, De | |
US5248521A (en) * | 1988-06-27 | 1993-09-28 | Mazda Motor Corporation | Method for repairing a coating surface |
US4965096A (en) * | 1988-08-25 | 1990-10-23 | Rca Licensing Corp. | Method for preparing improved lithium-silicate glare-reducing coating for a cathode-ray tube |
JPH0372578A (ja) * | 1989-05-30 | 1991-03-27 | Kansai Paint Co Ltd | 缶内面用複層塗膜 |
JPH08500075A (ja) * | 1992-08-11 | 1996-01-09 | イー・カショーギ・インダストリーズ | 水和凝結性容器 |
US5584746A (en) * | 1993-10-18 | 1996-12-17 | Shin-Etsu Handotai Co., Ltd. | Method of polishing semiconductor wafers and apparatus therefor |
US5733603A (en) * | 1996-06-05 | 1998-03-31 | Kimberly-Clark Corporation | Surface modification of hydrophobic polymer substrate |
JP2821678B2 (ja) | 1997-04-07 | 1998-11-05 | 株式会社ニコン | 基板の吸着装置 |
US6257564B1 (en) * | 1998-05-15 | 2001-07-10 | Applied Materials, Inc | Vacuum chuck having vacuum-nipples wafer support |
US6365232B1 (en) * | 1998-09-23 | 2002-04-02 | Rohr, Inc. | Adhesive bond tool having improved release coating for advanced composite and metallic components and method |
US6491570B1 (en) * | 1999-02-25 | 2002-12-10 | Applied Materials, Inc. | Polishing media stabilizer |
US6403213B1 (en) * | 1999-05-14 | 2002-06-11 | E. I. Du Pont De Nemours And Company | Highly filled undercoat for non-stick finish |
KR100316712B1 (ko) * | 1999-06-22 | 2001-12-12 | 윤종용 | 화학기계적 연마장치에 웨이퍼를 로딩/언로딩하기 위한 로드컵의 페디스탈 |
JP2002187060A (ja) * | 2000-10-11 | 2002-07-02 | Ebara Corp | 基板保持装置、ポリッシング装置、及び研磨方法 |
JP2002217141A (ja) | 2001-01-15 | 2002-08-02 | Nikon Corp | 研磨方法、研磨装置、半導体デバイス製造方法、及び半導体デバイス |
WO2003030232A1 (fr) * | 2001-09-28 | 2003-04-10 | Shin-Etsu Handotai Co.,Ltd. | Disque de serrage et d'usinage de pieces, dispositif d'usinage de pieces et procede d'usinage |
US20030064158A1 (en) * | 2001-10-03 | 2003-04-03 | Thirkeldsen C. G. | Method and apparatus for improving corrosion resistance of chrome plated material |
US6746318B2 (en) * | 2001-10-11 | 2004-06-08 | Speedfam-Ipec Corporation | Workpiece carrier with adjustable pressure zones and barriers |
US6844029B2 (en) * | 2001-10-26 | 2005-01-18 | Kansai Paint Co., Ltd. | Photocurable primer composition and coating method by use of the same |
US7344786B2 (en) * | 2001-10-29 | 2008-03-18 | Fujifilm Corporation | Magnetic recording medium including a smooth coating layer on one side of the support |
US6610360B2 (en) * | 2001-11-28 | 2003-08-26 | Guardian Industries Corp. | Buffing diamond-like carbon (DLC) to improve scratch resistance |
US20040051026A1 (en) * | 2002-09-18 | 2004-03-18 | Flynn Robert William | Mold core coating |
US20040175551A1 (en) * | 2003-03-04 | 2004-09-09 | Ford Motor Company | Wet-on-wet two-tone painting |
CN100543073C (zh) * | 2003-08-08 | 2009-09-23 | 优泊公司 | 热塑性树脂膜 |
US20050074555A1 (en) * | 2003-10-07 | 2005-04-07 | Konica Minolta Medical & Graphic, Inc. | Producing method for die coater and coating apparatus |
DE10357268B3 (de) * | 2003-12-01 | 2005-06-09 | Mb-Portatec Gmbh | Verfahren und Anordnung zur Bearbeitung von Dünnblechen und dünnwandigen, einfach oder doppelt gekrümmten Platten oder Schalen |
US20070298175A1 (en) * | 2004-05-18 | 2007-12-27 | Ashland Licensing And Intellectual Property Llc | Process for Coating and Cleaning Metal Surfaces |
US20050266180A1 (en) * | 2004-05-26 | 2005-12-01 | Yubai Bi | Ink-jet recording medium for dye-or pigment-based ink-jet inks |
JP2006305713A (ja) * | 2005-03-28 | 2006-11-09 | Nikon Corp | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
-
2006
- 2006-02-10 JP JP2006034179A patent/JP2006305713A/ja active Pending
- 2006-02-17 KR KR1020077024747A patent/KR101290845B1/ko active IP Right Grant
- 2006-02-17 US US11/887,211 patent/US8371564B2/en active Active
- 2006-02-17 KR KR1020137000770A patent/KR101367010B1/ko active IP Right Grant
- 2006-02-17 WO PCT/JP2006/303360 patent/WO2006103854A1/ja active Application Filing
- 2006-03-27 TW TW095110487A patent/TW200636905A/zh unknown
-
2013
- 2013-01-25 US US13/750,874 patent/US8662485B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6373625A (ja) * | 1986-09-17 | 1988-04-04 | Shin Etsu Handotai Co Ltd | 半導体ウエ−ハマウンテイング用樹脂薄膜層の形成方法 |
JPH0691463A (ja) * | 1992-09-14 | 1994-04-05 | Hitachi Ltd | 板状体の保持装置 |
JPH10229115A (ja) * | 1997-02-14 | 1998-08-25 | Sumitomo Metal Ind Ltd | ウェハ用真空チャック |
JP2004259792A (ja) * | 2003-02-25 | 2004-09-16 | Nikon Corp | 吸着装置、吸着装置用シート、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016508676A (ja) * | 2013-02-28 | 2016-03-22 | ワトロー エレクトリック マニュファクチュアリング カンパニー | 低熱膨張係数の上部を備えたワーク受台構造 |
CN106736762A (zh) * | 2017-02-15 | 2017-05-31 | 珠海格力智能装备有限公司 | 吸盘夹具和显示屏边框加工设备 |
CN107649889A (zh) * | 2017-10-27 | 2018-02-02 | 无锡智谷锐拓技术服务有限公司 | 一种机械加工用缓冲工作台 |
Also Published As
Publication number | Publication date |
---|---|
KR101367010B1 (ko) | 2014-02-24 |
KR101290845B1 (ko) | 2013-08-07 |
US20090060688A1 (en) | 2009-03-05 |
JP2006305713A (ja) | 2006-11-09 |
TW200636905A (en) | 2006-10-16 |
KR20130018990A (ko) | 2013-02-25 |
US8371564B2 (en) | 2013-02-12 |
US8662485B2 (en) | 2014-03-04 |
US20130200559A1 (en) | 2013-08-08 |
KR20080002890A (ko) | 2008-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006103854A1 (ja) | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 | |
TW436381B (en) | Improved CMP platen with patterned surface background of the invention | |
JP5339680B2 (ja) | 表面の研磨 | |
US7582221B2 (en) | Wafer manufacturing method, polishing apparatus, and wafer | |
JP4864757B2 (ja) | 基板載置台及びその表面処理方法 | |
US6193587B1 (en) | Apparatus and method for cleansing a polishing pad | |
TWI458592B (zh) | Grinding head and grinding device | |
JP4086722B2 (ja) | 基板保持装置及び研磨装置 | |
EP0874390A1 (en) | Grinding method of grinding device | |
JP2008528309A (ja) | 低圧研磨のための多層研磨パッド | |
JPH11156711A (ja) | 研磨装置 | |
US20060070872A1 (en) | Pad design for electrochemical mechanical polishing | |
JPH11512978A (ja) | 電子装置の化学機械的平坦化のための方法および装置 | |
JP2004259792A (ja) | 吸着装置、吸着装置用シート、研磨装置、半導体デバイス及び半導体デバイス製造方法 | |
TW201838018A (zh) | 用於化學機械拋光的無黏合劑載具 | |
TW201904720A (zh) | 化學機械研磨系統與方法 | |
JP2009113196A (ja) | 除去レートランプアップによる影響を減少し且つ欠陥レートを安定化するための柔軟パッド調整方法 | |
WO2004001829A1 (ja) | 研磨体、研磨装置、半導体デバイス及び半導体デバイスの製造方法 | |
US7699972B2 (en) | Method and apparatus for evaluating polishing pad conditioning | |
JP2004140178A (ja) | 化学的機械研磨装置 | |
TW202228916A (zh) | 用於改善cmp性能的工作臺表面修改和高性能墊調節 | |
US6300248B1 (en) | On-chip pad conditioning for chemical mechanical polishing | |
CN216967413U (zh) | 卡环及包括该卡环的基板研磨装置 | |
KR100576822B1 (ko) | 화학적ㆍ기계적 연마장치 | |
JP3638138B2 (ja) | ウエーハ保持盤の作製方法及びウエーハの研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 11887211 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077024747 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06714499 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020137000770 Country of ref document: KR |