WO2006043599A1 - 耐熱性樹脂 - Google Patents
耐熱性樹脂 Download PDFInfo
- Publication number
- WO2006043599A1 WO2006043599A1 PCT/JP2005/019219 JP2005019219W WO2006043599A1 WO 2006043599 A1 WO2006043599 A1 WO 2006043599A1 JP 2005019219 W JP2005019219 W JP 2005019219W WO 2006043599 A1 WO2006043599 A1 WO 2006043599A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin
- precursor
- diamine compound
- elastic modulus
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
- C08G73/1025—Preparatory processes from tetracarboxylic acids or derivatives and diamines polymerised by radiations
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3412—Heterocyclic compounds having nitrogen in the ring having one nitrogen atom in the ring
- C08K5/3432—Six-membered rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/254—Polymeric or resinous material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2813—Heat or solvent activated or sealable
- Y10T428/2817—Heat sealable
- Y10T428/2822—Wax containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Definitions
- Thermoplastic resins and solvents that are conventionally known as low-elasticity resins have glass transition points below or near room temperature, and have problems with reliability at high temperatures.
- Low-elasticity polyimide is used as a low-stress and heat-resistant material for semiconductor protective films, multilayer circuit board insulating films, semiconductor adhesive films, flexible circuit board coverlays, etc. (Patent Documents) :! ⁇ See 6).
- Patent Document 2 JP-A-6-73178
- Patent Document 3 JP-A-6-207024
- Patent Document 4 JP-A-6-73178
- thermoplastic resin by controlling the chemical structure of the thermoplastic resin, the temperature dependency of the elastic modulus is reduced, and a resin having an elastic modulus value of lGPa to lMPa at room temperature to 250 ° C is obtained. Came out.
- This resin is an excellent resin having low elasticity and low stress and having heat resistance capable of maintaining the cohesive strength and reliability even at high temperatures.
- thermoplastic resin or a precursor resin thereof having an elastic modulus at room temperature of 25 ° C of 1 GPa or less and an elastic modulus at 250 ° C of IMPa or more.
- thermoplastic resin or a precursor resin thereof according to (1) above which does not have a sea-island structure (phase separation structure) of 0.1 / m or more and is transparent.
- a photosensitive resin composition comprising the thermoplastic resin or precursor resin thereof described in (1) to (5) above, or a photosensitizer.
- R to R each independently represent a hydrogen atom or an organic group having carbon atoms:!
- thermoplastic resin or precursor resin thereof according to (4) or (5) above and powder carbon.
- thermoplastic resin having low stress and high reliability, which has been difficult in the past.
- a functional resin using the resin of the present invention for example, a photosensitive resin or a conductive resin, can have low stress and high reliability at the same time.
- the present invention provides a thermoplastic resin having low stress and heat resistance, and a method for producing the same.
- thermoplastic resin having low stress and heat resistance has an elastic modulus force at 25 ° C of 1 GPa or less and an elastic modulus at 250 ° C of IMPa or more.
- the life span at 25 ° C is 0.8 GPa or less, especially. 5 GPa or less, preferably F, and elastic modulus at 250 ° C. is preferably lOMPa or more.
- the thermoplastic resin here refers to a straight-chain polymer compound that does not have a three-dimensional crosslinked structure. Examples of such a resin include polyimide, polyamideimide, polyesterimide, polyester, polyamide, and polyester. Examples thereof include condensed materials such as nzuxazole, polycarbodiimide, and poly carbonate.
- low-stress resins have a crosslinked structure and can be made of a material having a glass transition point (Tg) of room temperature or lower or near room temperature, many of which are inorganic materials or highly elastic resins. It was a complex. In addition, there is a possibility that such a resin can be obtained even with a resin having a phase separation structure (sea-island structure). However, in the former, there is a problem that stress is generated by curing shrinkage, and in the latter, it is very difficult to control such a phase structure. Since the elastic modulus of one of the domains was IMPa or less, there was a problem that practical heat resistance could not be obtained. Many of the low-elasticity resins containing siloxane belong to this.
- the present invention particularly relates to a non-silicone resin having a siloxane content of less than 10% by mass.
- the present invention can provide a transparent thermoplastic resin having a siloxane content of less than 10% by mass and having no sea-island structure (phase separation structure) of 0.1 ⁇ or more.
- the transparent means that the haze appearance by visual observation even when what dyeing process Nag, can not be confirmed 0. 1 beta m or more structures in cross-sectional observation by transmission electron microscopy (TEM) .
- TEM transmission electron microscopy
- thermoplastic resin of the present invention can be obtained by controlling the structure at the molecular level. That is, a linear polymer (high Tg resin) with a high Tg is copolymerized with a resin (low Tg resin) with a Tg of room temperature or less, and the chemical compatibility between them and the molecular weight of the low Tg resin are controlled. Can be obtained.
- the modulus of elasticity of the high Tg resin is high, if the modulus of elasticity of the high Tg resin containing many low Tg resins is low, the low Tg resin is copolymerized in a small proportion.
- the high Tg resin is a heat-resistant polymer having a Tg of 250 ° C or higher. Etc. Tg of high Tg resin is preferred Or more than 270 ° C.
- the low Tg resin copolymerized with the high Tg resin includes, for example, a liquid elastomer such as polyalkylene oxide, poly acrylate, polybutadiene, hydrogenated polybutadiene, and polybutadiene allylnitrile copolymer.
- a typical example is a terminal-modified compound, which can be copolymerized in a high Tg resin by an appropriate terminal group.
- the Tg of the low Tg resin is preferably not more than 120 ° C.
- the number average molecular weight of the low Tg resin is generally 200 to 10000, preferably 500 to 5000.
- terminal group examples include an amino group, a carboxyl group, and a hydroxyl group.
- a three-dimensional cross-linked structure is not formed by having only terminal groups (bifunctional).
- the ratio (mass ratio) between the high Tg resin and the low Tg resin is preferably 1: 2 to 2: 1.
- the number average molecular weight of the resulting thermoplastic resin is generally 10,000-1,000,000, but is not limited thereto.
- the sea-island structure (phase separation structure) can be measured by staining a sample with an appropriate metal ion and observing it with a transmission electron microscope (TEM).
- TEM transmission electron microscope
- the sea-island structure of a resin having a polybutadiene structure can be confirmed by staining with osmic acid.
- the compatibility is the chemical affinity between the low Tg resin component and the high Tg resin component, and the resin has a uniform concentration.
- it is preferable that the characteristics (high Tg) of the high Tg resin component are expressed.
- thermoplastic resin of the present invention can be applied in the state of a precursor (precursor resin) of the resin, and then subjected to post-treatment such as heating to obtain the desired resin of the present invention.
- additives such as a photosensitizer or a conductive agent are added to the precursor resin to form a photosensitive or conductive composition, and after coating, a desired low-stress resin is obtained by post-treatment such as heating.
- It can be a photosensitive or conductive material.
- a precursor resin for example, polyamic acid can be cited as a precursor resin of a polyimide resin.
- Polyimide is generally a heat-resistant resin obtained by dehydrating and condensing polyamic acid, which is a precursor, and the polyamic acid itself has a substantially equimolar ratio of an acid dianhydride component and a diamine component. Can be obtained by reacting in an appropriate organic solvent.
- a method for dehydrating and imidizing the obtained polyamic acid for example, a heat imidization method, an azeotropic dehydration method, a chemical imidization method, and the like are known.
- a polyamic acid solution is applied on a substrate, then dried, and generally subjected to heat treatment at a high temperature of 200 ° C. to 500 ° C. for dehydration and ring closure, whereby a polyimide film can be obtained directly.
- a solvent that can be azeotroped with water for example, xylene or toluene, is added to the above polyamic acid solution, and water is azeotropically dehydrated at 100 ° C to 200 ° C for dehydration. It is possible to obtain a polyimide as a solution by ring closure.
- Chemical imidation is a method of chemically dehydrating and ring-closing the above polyamic acid solution using a basic catalyst such as a tertiary amine such as pyridine and a dehydrating agent such as anhydrous acetic acid.
- a basic catalyst such as a tertiary amine such as pyridine
- a dehydrating agent such as anhydrous acetic acid.
- the diamine component for obtaining a preferable resin is a diamine compound having two ends having a amine structure and having a polyether structure (hereinafter referred to as PE diamine compound).
- the PE diamine compound is preferred in that it provides a high heat resistance and low stress low elastic modulus polyimide resin.
- the PE diamine compound is not particularly limited as long as it is a compound having a polyether structure and having at least two terminals having a amine structure.
- a terminal diamine having a polypropylene glycol structure or a polyethylene glycol structure A terminal diamine having a polytetramethylene glycol structure, a terminal diamine having a plurality of these structures, and the like.
- a PE diamine compound having two terminals having an amine structure prepared from ethylene oxide, propylene oxide, polytetramethylene glycol, polyamine or a mixture thereof is preferable.
- the polyether structure possessed by the PE diamine compound is a structure having two or more alkyleneoxy groups represented by _A_0.
- A represents an alkylene group.
- O is an oxygen atom.
- the alkylene group as A generally has 1 to 10 carbon atoms, preferably 2 to 5 carbon atoms, and examples thereof include methylene, ethylene, propylene, butylene and the like.
- alkyleneoxy groups may be the same or different.
- the alkylene group as A may have a substituent (for example, a methyl group, a polyether group, an amino polyether group).
- the mass occupied by the polyether structure in the PE diamine compound is preferably 30% or more, more preferably 40 to 60%.
- the amine structure of the PE diamine compound at the two ends may be the same or different, and may be any of primary to tertiary, but primary is preferred.
- Examples of the amine structure include methylamine, ethylamine, and propylamine, and propylamine is preferred.
- the number average molecular weight of the PE diamine compound is preferably 500 or more, more preferably 1000 to 5000.
- Examples of the PE diamine compound include compounds represented by formulas (1) to (4).
- a represents an integer of 2 or more, preferably 5 to 80.
- b, c and d each represents an integer of 0 or more, provided that b + c + d is 2 or more, preferably 5 to 50.
- e, f and g each represent an integer of 0 or more, provided that e + f + g is 2 or more, preferably 5 to 30.
- h represents an integer of 1 or more, preferably 1 to 4.
- the diamine component another diamine compound having no polyether structure together with the PE diamine compound.
- the diamine compound that is preferably used in combination include the following aliphatic diamines and aromatic diamines.
- aliphatic diamine examples include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxado-1,12-diaminododecane, 1 , 3-Bis (3-aminopropynole) 1, 1, 3, 3-Tetramethinole
- the molecular weight of the aliphatic diamine is usually 50 to 1000, preferably 100 to 300.
- aromatic diamines examples include 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, m-phenylenediamine, p-phenyl.
- the tetracarboxylic dianhydride for synthesizing the heat-resistant resin of the present invention is not particularly limited.
- Preferred tetracarboxylic anhydrides include 3, 3 ′, 4, 4 ′ _biphenyltetracarboxylic dianhydride, 4, 4′-oxydiphthalic dianhydride, 2, 2_bis (3,4) Dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), pyromellitic dianhydride.
- Preferable examples include resins having a structure obtained by the reaction of the diamine compound represented by the general formulas (1) to (4) shown below and Tetto NN lacarboxylic dianhydride. .
- X represents a structure containing at least one aromatic ring, preferably 6 to 30 carbon atoms, and examples thereof include a benzene ring, biphenyl, and diphenyl ether.
- OC O COC COMMMM a to h are the same as those in the general formulas (1) to (4).
- the PE diamine compound can be blended with a tetracarboxylic dianhydride in a stoichiometric amount, preferably 5 to 60% of the stoichiometric amount, and is more preferable. 5 to 40%.
- a tetracarboxylic dianhydride in a stoichiometric amount, preferably 5 to 60% of the stoichiometric amount, and is more preferable. 5 to 40%.
- the diamine component other diamine compounds such as aliphatic diamine and aromatic diamine as described above are used in combination.
- the total amount of the PE diamine compound and the other diamine compound is generally stoichiometrically equivalent to the tetracarboxylic dianhydride, but is 50 to 50% of the stoichiometric equivalent. May be 200%.
- the resin or precursor resin obtained by the above method can be heat-treated at high temperature, preferably in an inert atmosphere, to obtain a resin with improved heat resistance.
- the temperature for heat treatment at a high temperature after drying the solvent is preferably 200 ° C or higher, preferably 250 to 350 ° C, and the treatment time is usually 10 minutes to 5 hours, preferably 30 minutes to 2 hours.
- the photosensitive material can be easily obtained by adding a photosensitive agent to the resin or precursor resin of the present invention, and can be used for image formation.
- a photosensitive agent for example, by dissolving the 1,4-dihydropyridine compound represented by the formula (I) having photosensitivity in the polyamic acid solution (resin precursor solution) obtained by the above method, A composition capable of easily forming a low-stress photosensitive polyimide resin can be prepared.
- This photosensitive polyimide resin composition is made into a thin film, and a negative pattern can be formed by light irradiation through a mask.
- photosensitizers include, for example, diazonaphthoquinone derivatives, photoradical generators typified by a-hydroxyketone derivatives, and photoacid generators typified by triazine-based derivatives jordonium salt derivatives. Can be mentioned.
- the conductive material can be easily obtained by adding and dispersing a conductive agent, for example, a powdery powder, in the resin or precursor resin of the present invention.
- a conductive agent for example, a powdery powder
- conductive agent examples include metal particles such as silver particles and copper particles, and nanoparticles thereof.
- the addition amount of the conductive agent is generally 10 to 90 parts by mass, preferably 10 to 50 parts by mass with respect to 100 parts by mass of the resin or precursor resin of the present invention.
- the film made of the thermoplastic resin of the present invention or its precursor resin It can be obtained by applying a solution containing the precursor resin together with a solvent (which may be the above-mentioned reaction solution itself) on the substrate and then removing the solvent by drying.
- a solvent which may be the above-mentioned reaction solution itself
- the solvent include the same solvents as those described above for the reaction solution.
- a coating method a spin coating method, a spray method or the like is used, a force to be applied directly on an appropriate substrate such as a silicon wafer, a comma coat method on a PET film or a polyimide film, or a fountain method.
- an appropriate substrate such as a silicon wafer, a comma coat method on a PET film or a polyimide film, or a fountain method.
- it may be formed by coating using a gravure method or the like, and transferred and laminated on an appropriate substrate such as a silicon wafer.
- the resin which is preferably heat-treated after drying the solvent
- an inert atmosphere such as a nitrogen atmosphere or vacuum.
- volatile components such as the solvent remaining in the resin can be completely removed.
- the resin of the present invention does not have a cross-linked structure and is soluble in a solvent. Therefore, if necessary, it can be peeled even after the resin is formed.
- the resin of the present invention can also be used for connecting portions of two kinds of substrates having different thermal (linear) expansion coefficients, and can relieve stress generated by the difference in thermal expansion between the two.
- the resin of the present invention since the resin of the present invention has low elasticity, it can be used as a dust removing resin for semiconductor devices.
- the foreign substance on the stage can be removed by forming the resin of the present invention on a Si wafer and transporting it to the apparatus so that the resin surface is in contact with the stage.
- the resin of the present invention can be used for connecting portions of two kinds of substrates having different thermal (linear) expansion coefficients, and can relieve stress generated by the difference in thermal expansion between the two.
- the elastic modulus was measured as a storage elastic modulus by measuring viscoelasticity by a tensile method.
- the storage elastic modulus was measured using a viscoelasticity measuring device RS-II (manufactured by Rheometric Sientific) at a frequency of 1 ⁇ and a strain of 0.3%.
- a resin was formed on a stainless steel foil (SUS304 foil) and immersed in a solder bath at 260 ° C for 10 seconds to examine whether there was any peeling, resin deformation, and warpage.
- a grease was formed on a stainless steel foil (100 mm mouth, 31 of thickness 25 111; 3304 foil), and on the flat surface, the height of the portion with the largest warpage was examined, and 2 mm or less. ⁇ , 25 mm, ⁇ , 5 mm or more X.
- DDE 4,4'-diaminodiphenyl ether
- NMP Pyrrolidone
- PMDA pyromellitic dihydrate
- the obtained resin solution was applied onto a stainless steel foil (100 mm mouth, SUS304 foil with a thickness of 25 zm) with a spin coater and dried at 100 ° C. for 10 minutes. This was heat-treated at 280 ° C.
- the thickness of the exposed portion before development was 24 ⁇
- the thickness after development was 24 / m
- a high contrast pattern could be obtained.
- the above photosensitive solution was applied onto a stainless steel foil (100 mm mouth, 31 of thickness 25 111; 3304 foil) with a spin coater and dried at 100 ° C. for 10 minutes. This was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a heat-resistant resin film having a thickness of 20 ⁇ m, and the amount of warpage, solder resistance, and elastic modulus were examined in the same manner as in Example 1. [0062] [Chemical 8]
- a resin solution was obtained in the same manner as in Example 3 except that 4% carbon dispersion (main component NMP) was used instead of NMP.
- the resulting resin solution was applied onto a stainless steel foil (100 mm mouth, SUS304 foil with a thickness of 100) using a spin coater. Dried for 10 minutes at C. This was heat-treated at 280 ° C for 2 hours in a nitrogen atmosphere to form a resin film having a thickness of 20 xm, and the amount of warpage was measured.
- the surface resistance of the resin obtained on the SUS foil was measured, it was possible to obtain a 10 1Q Q port and a semiconductive material. Then, half of this sample was immersed in a solder bath at 260 ° C for 10 seconds to check whether there was any peeling or deformation of the resin.
- the experiment was performed in the same manner as in Example 1 except that 19.5 g of D-2000, 21.0 g of DDE, 262 g of NMP, and 25 Og of PMDA were used.
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020077011350A KR101335117B1 (ko) | 2004-10-19 | 2005-10-19 | 내열성 수지 |
| US11/665,772 US20070293597A1 (en) | 2004-10-19 | 2005-10-19 | Heat-Resistant Resin |
| CN2005800358805A CN101044189B (zh) | 2004-10-19 | 2005-10-19 | 耐热性树脂 |
| EP20050795381 EP1803762A4 (en) | 2004-10-19 | 2005-10-19 | HEAT-RESISTANT RESIN |
| US12/350,764 US8541099B2 (en) | 2004-10-19 | 2009-01-08 | Heat-resistant resin |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-304028 | 2004-10-19 | ||
| JP2004304028 | 2004-10-19 | ||
| JP2005-297734 | 2005-10-12 | ||
| JP2005297734A JP2006143996A (ja) | 2004-10-19 | 2005-10-12 | 耐熱性樹脂 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/665,772 A-371-Of-International US20070293597A1 (en) | 2004-10-19 | 2005-10-19 | Heat-Resistant Resin |
| US12/350,764 Continuation US8541099B2 (en) | 2004-10-19 | 2009-01-08 | Heat-resistant resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2006043599A1 true WO2006043599A1 (ja) | 2006-04-27 |
Family
ID=36203014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2005/019219 Ceased WO2006043599A1 (ja) | 2004-10-19 | 2005-10-19 | 耐熱性樹脂 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20070293597A1 (cs) |
| EP (1) | EP1803762A4 (cs) |
| JP (1) | JP2006143996A (cs) |
| KR (1) | KR101335117B1 (cs) |
| CN (1) | CN101044189B (cs) |
| TW (1) | TW200621851A (cs) |
| WO (1) | WO2006043599A1 (cs) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8623253B2 (en) * | 2010-02-26 | 2014-01-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Low-melt poly(amic acids) and polyimides and their uses |
| JP2012063645A (ja) | 2010-09-17 | 2012-03-29 | Nitto Denko Corp | 感光性樹脂組成物およびそれを用いた金属支持体付回路基板 |
| JP5592740B2 (ja) * | 2010-09-22 | 2014-09-17 | 日東電工株式会社 | ハードディスクドライブのスライダ用回路付きサスペンション基板 |
| JP2014133887A (ja) * | 2012-12-14 | 2014-07-24 | Mitsubishi Chemicals Corp | ポリイミド樹脂組成物 |
| JP2016512792A (ja) | 2013-03-15 | 2016-05-09 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | Aodラウト加工用レーザシステム及び方法 |
| KR102280582B1 (ko) * | 2016-05-25 | 2021-07-23 | 도레이 카부시키가이샤 | 수지 조성물 |
| JP6857641B2 (ja) * | 2018-12-19 | 2021-04-14 | 信越化学工業株式会社 | 成膜方法及び成膜装置 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0274947A (ja) * | 1988-09-10 | 1990-03-14 | Toyobo Co Ltd | 感光性樹脂組成物 |
| JPH05170901A (ja) | 1991-12-02 | 1993-07-09 | Sumitomo Bakelite Co Ltd | 感光性樹脂の製造方法 |
| JPH05230212A (ja) * | 1992-02-21 | 1993-09-07 | Tosoh Corp | ブロック共重合体及びその製造方法 |
| JPH0643648A (ja) * | 1992-07-22 | 1994-02-18 | Nitto Denko Corp | ポジ型フオトレジスト組成物、感光性絶縁膜およびパタ―ン形成方法 |
| JPH0673178A (ja) | 1992-08-26 | 1994-03-15 | Shin Etsu Chem Co Ltd | ポリアミック酸及びポリイミド樹脂、これらの製造方法並びに半導体装置保護用材料 |
| JPH06207024A (ja) | 1992-11-26 | 1994-07-26 | Chisso Corp | 低弾性率ポリイミドシロキサン複合体及びその製造法 |
| JP2000103848A (ja) | 1998-09-28 | 2000-04-11 | Dainippon Printing Co Ltd | 溶剤可溶性低弾性率ポリイミド |
| JP2002050854A (ja) | 2000-08-01 | 2002-02-15 | Ube Ind Ltd | 高密度フレキシブル基板の製法 |
| US6364465B1 (en) | 1995-07-06 | 2002-04-02 | E. I. Du Pont De Nemours And Company | Ink jet heads having photoresist layer containing poly (amic acid) |
| JP2005091421A (ja) * | 2003-09-12 | 2005-04-07 | Mitsui Chemicals Inc | 感光性樹脂組成物、ドライフィルムおよびそれを用いた加工品 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG52916A1 (en) * | 1996-02-13 | 1998-09-28 | Nitto Denko Corp | Circuit substrate circuit-formed suspension substrate and production method thereof |
| JPH1187867A (ja) * | 1997-09-01 | 1999-03-30 | Nitto Denko Corp | 回路基板、回路付きサスペンション基板及びそれらの製造方法 |
| JP3346265B2 (ja) * | 1998-02-27 | 2002-11-18 | 宇部興産株式会社 | 芳香族ポリイミドフィルムおよびその積層体 |
| US6300037B1 (en) * | 1998-11-30 | 2001-10-09 | Nitto Denko Corporation | Photosensitive resin composition and adhesive |
| JP4146037B2 (ja) * | 1999-07-07 | 2008-09-03 | 日東電工株式会社 | 感光性樹脂組成物及び回路基板 |
| EP2266717A2 (en) * | 2000-06-06 | 2010-12-29 | Nitto Denko Corporation | Cleaning member |
-
2005
- 2005-10-12 JP JP2005297734A patent/JP2006143996A/ja active Pending
- 2005-10-19 KR KR1020077011350A patent/KR101335117B1/ko not_active Expired - Fee Related
- 2005-10-19 TW TW094136473A patent/TW200621851A/zh not_active IP Right Cessation
- 2005-10-19 EP EP20050795381 patent/EP1803762A4/en not_active Withdrawn
- 2005-10-19 US US11/665,772 patent/US20070293597A1/en not_active Abandoned
- 2005-10-19 CN CN2005800358805A patent/CN101044189B/zh not_active Expired - Fee Related
- 2005-10-19 WO PCT/JP2005/019219 patent/WO2006043599A1/ja not_active Ceased
-
2009
- 2009-01-08 US US12/350,764 patent/US8541099B2/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0274947A (ja) * | 1988-09-10 | 1990-03-14 | Toyobo Co Ltd | 感光性樹脂組成物 |
| JPH05170901A (ja) | 1991-12-02 | 1993-07-09 | Sumitomo Bakelite Co Ltd | 感光性樹脂の製造方法 |
| JPH05230212A (ja) * | 1992-02-21 | 1993-09-07 | Tosoh Corp | ブロック共重合体及びその製造方法 |
| JPH0643648A (ja) * | 1992-07-22 | 1994-02-18 | Nitto Denko Corp | ポジ型フオトレジスト組成物、感光性絶縁膜およびパタ―ン形成方法 |
| JPH0673178A (ja) | 1992-08-26 | 1994-03-15 | Shin Etsu Chem Co Ltd | ポリアミック酸及びポリイミド樹脂、これらの製造方法並びに半導体装置保護用材料 |
| JPH06207024A (ja) | 1992-11-26 | 1994-07-26 | Chisso Corp | 低弾性率ポリイミドシロキサン複合体及びその製造法 |
| US6364465B1 (en) | 1995-07-06 | 2002-04-02 | E. I. Du Pont De Nemours And Company | Ink jet heads having photoresist layer containing poly (amic acid) |
| JP2000103848A (ja) | 1998-09-28 | 2000-04-11 | Dainippon Printing Co Ltd | 溶剤可溶性低弾性率ポリイミド |
| JP2002050854A (ja) | 2000-08-01 | 2002-02-15 | Ube Ind Ltd | 高密度フレキシブル基板の製法 |
| JP2005091421A (ja) * | 2003-09-12 | 2005-04-07 | Mitsui Chemicals Inc | 感光性樹脂組成物、ドライフィルムおよびそれを用いた加工品 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1803762A4 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070085399A (ko) | 2007-08-27 |
| CN101044189A (zh) | 2007-09-26 |
| CN101044189B (zh) | 2010-06-09 |
| EP1803762A4 (en) | 2012-12-05 |
| US20090130432A1 (en) | 2009-05-21 |
| EP1803762A1 (en) | 2007-07-04 |
| TW200621851A (en) | 2006-07-01 |
| KR101335117B1 (ko) | 2013-12-03 |
| TWI370827B (cs) | 2012-08-21 |
| US20070293597A1 (en) | 2007-12-20 |
| US8541099B2 (en) | 2013-09-24 |
| JP2006143996A (ja) | 2006-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106574163B (zh) | 临时粘接用粘合剂、粘合剂层、晶片加工体及使用其的半导体器件的制造方法、聚酰亚胺共聚物、聚酰亚胺混合树脂以及树脂组合物 | |
| CN102209754B (zh) | 印刷线路板用树脂组合物 | |
| JP6819293B2 (ja) | 仮貼り用積層体フィルム、仮貼り用積層体フィルムを用いた基板加工体および積層基板加工体の製造方法、ならびにこれらを用いた半導体装置の製造方法 | |
| JP6834941B2 (ja) | 樹脂組成物、樹脂層、永久接着剤、仮貼り接着剤、積層フィルム、ウエハ加工体および電子部品または半導体装置の製造方法 | |
| JP3136942B2 (ja) | ポリイミドシロキサンの組成物 | |
| JP6435862B2 (ja) | 素子加工用積層体、素子加工用積層体の製造方法、およびこれを用いた薄型素子の製造方法 | |
| JP3243963B2 (ja) | ポリイミドシロキサン組成物 | |
| US8541099B2 (en) | Heat-resistant resin | |
| TWI418577B (zh) | A method for producing a polyimide film, and a polyamic acid solution composition | |
| JP2020136600A (ja) | 半導体または電子部品製造用粘着フィルムならびに半導体または電子部品の製造方法 | |
| JP2003113338A (ja) | スクリーン印刷用の耐熱性ブロック共重合ポリイミド組成物及びそのポリイミドを用いるインキの組成と塗膜の形成方法 | |
| JP2624724B2 (ja) | ポリイミドシロキサン組成物 | |
| JP2003213130A (ja) | ポリイミド樹脂組成物及び耐熱接着剤 | |
| JP5167712B2 (ja) | ポリイミド積層体の製造方法、ポリイミド積層体 | |
| JP3550913B2 (ja) | ポリイミドシロキサンおよびその製法 | |
| JP2597215B2 (ja) | ポリイミドシロキサン組成物および固化膜 | |
| JP7052384B2 (ja) | 仮保護膜用樹脂組成物、およびこれを用いた半導体電子部品の製造方法 | |
| JP2631878B2 (ja) | ポリイミドシロキサン組成物および膜 | |
| JP3810100B2 (ja) | ポリイミドシロキサン | |
| JP3646410B2 (ja) | 積層基板 | |
| US5869161A (en) | Tape comprising solvent-containing non-tacky, free-standing, fully imidized polyimide film | |
| JPWO2007114081A1 (ja) | 金属積層体 | |
| JP3539143B2 (ja) | 接着剤付きテ−プ | |
| JP3012198B2 (ja) | 電気又は電子部品用ポリイミドシロキサン膜の製造方法 | |
| JPH07224259A (ja) | Tab用キャリアテープ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| REEP | Request for entry into the european phase |
Ref document number: 2005795381 Country of ref document: EP |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 2005795381 Country of ref document: EP |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 200580035880.5 Country of ref document: CN Ref document number: 11665772 Country of ref document: US |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 1020077011350 Country of ref document: KR |
|
| WWP | Wipo information: published in national office |
Ref document number: 2005795381 Country of ref document: EP |
|
| WWP | Wipo information: published in national office |
Ref document number: 11665772 Country of ref document: US |