WO2006041989A2 - Cible de pulverisation assurant la formation d'un film d'electrode pour dispositifs a semi-conducteurs et son procede de fabrication - Google Patents

Cible de pulverisation assurant la formation d'un film d'electrode pour dispositifs a semi-conducteurs et son procede de fabrication Download PDF

Info

Publication number
WO2006041989A2
WO2006041989A2 PCT/US2005/035940 US2005035940W WO2006041989A2 WO 2006041989 A2 WO2006041989 A2 WO 2006041989A2 US 2005035940 W US2005035940 W US 2005035940W WO 2006041989 A2 WO2006041989 A2 WO 2006041989A2
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum
alloy
sputtering target
less
based alloy
Prior art date
Application number
PCT/US2005/035940
Other languages
English (en)
Other versions
WO2006041989A3 (fr
Inventor
Toshio Inase
Shunsuke Yatsumani
Eugene Y. Ivanov
Ronald G. Jordan
Original Assignee
Tosoh Smd, Inc.
Tosoh Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Smd, Inc., Tosoh Corporation filed Critical Tosoh Smd, Inc.
Publication of WO2006041989A2 publication Critical patent/WO2006041989A2/fr
Publication of WO2006041989A3 publication Critical patent/WO2006041989A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention relates to a sputtering target for forming an electrode for semiconductor devices, its fabrication method, and particularly to an aluminum-based alloy sputtering target and its fabrication method.
  • LCDs Liquid crystal displays
  • TFT thin film transistor
  • the TFT is composed of a semi-conducting film having an electrode made of a thin metal film, typically an aluminum based alloy.
  • the interconnections and the electrode are electrically connected to each other.
  • the aluminum-based alloy films are typically deposited on glass, silicon and silicon with Si ⁇ 2 layer substrates by DC magnetron sputtering.
  • the resistivity (electrical resistance) of the electrode for semiconductor devices should be lower than 20 ⁇ cm, preferably lower than 3.5 ⁇ . ⁇ cm.
  • the electrode material for semiconductor devices having a low resistivity may include Ag, Au, Cu and Al.
  • Al thin-film metallization has been used for interconnection conductors in silicon integrated circuit (IC) microfabrication.
  • IC silicon integrated circuit
  • Al is insufficient in thermal stability, and has a disadvantage in generating hillocks on the surface of an electrode film during a heating process in the TFT fabrication process, after deposition of the electrode film.
  • an aluminum-based alloy film can be used instead of Al.
  • An aluminum-based alloy film especially containing one or more rare earth elements (hereinafter, referred to as "REM") has excellent thermal stability and therefore exhibits low hillock growth during heating after deposition to form an electrode film.
  • REM rare earth elements
  • Al-REM alloy sputtering targets should be used to form the Al-REM alloy film.
  • such aluminum-based alloys typically have been produced by means of powder metallurgy processes of the Al-REM alloy.
  • target materials formed by powder metallurgy processes have high levels of oxygen, for example greater than 1000 ppm, and this results in increasing the resistivity of the film formed by such targets.
  • Another process of making Al-REM alloy is by the melting process.
  • Al-REM alloy targets formed by ordinary melting process usually do not have uniform microstructure. This causes unstable sputtering performance that, in tarn, results in non-uniform sputtering rates and film composition during the sputtering process. [0007] Accordingly, there is a need to provide a sputtering target for forming an electrode material for LSI semiconductor devices that inhibits the generation of hillocks in and reduces the resistivity (i.e., lower than 20 ⁇ cm) of the electrode.
  • One aspect of the present invention pertains to a sputtering target for an electrode for semiconductor devices with fewer tendencies to generate hillocks and having a resistivity lower than 20 ⁇ cm. Another aspect of the present invention pertains to a method of fabricating the sputtering target that is used to form an electrode for semiconductor devices as mentioned above. Still another aspect of the present invention pertains to an aluminum-based alloy which is suitable to produce said sputtering target. [0009] Accordingly, one exemplary embodiment of the invention pertains to a sputtering target for producing an electrode for semiconductor devices and to fabrication methods for making the sputtering target and to the electrode that is formed via PVD from the target.
  • a sputtering target for an electrode for semiconductor devices is made of an aluminum-based alloy containing one or more alloying elements selected from the group of rare earth elements in total amount below 3 at% .
  • the contents of alloying elements of target are more than 3 at % , the resistivity of the resulting film increases to an undesirable level.
  • the contents of alloying elements in the target are preferably from trace to less than 1 at% , more preferably less than 0.5 at% .
  • a sputtering target for an electrode for semiconductor devices contains less than 100 ppm oxygen. When the oxygen content in the target is more than 100 ppm, the resistivity of the film increases to an undesirable level.
  • a sputtering target for an electrode for semiconductor devices has a microstructure comprising areas of aluminum grains and boundary areas of a coexistent state that includes an aluminum phase and an aluminum-additive phase.
  • said sputtering target has an aluminum grain size of greater than 10 micrometers and less than 500 micrometers.
  • a sputtering target having a large grain size over 500 micrometers exhibits unstable sputtering performance, which results in an unstable sputtering rate and non-uniform composition of the film made during sputtering.
  • sputtering targets in accordance with the present invention have aluminum grain sizes of less than 200 micrometers.
  • the boundary areas composed at the coexistent state have widths of less than 30 micrometers, preferably less than 10 micrometers.
  • the width of boundary areas of coexistent state are over 30 micrometers, the microstructure of target does not have a uniform phase and the performance of the target during sputtering becomes unstable.
  • an aluminum-based alloy for the target mentioned above contains one or more alloying elements selected from the group of rare earth elements present in total amount below 3 at%, preferably from trace to less than 1 at%, more preferably less than 0.5 at%.
  • said aluminum-based alloy for the target contains less than 100 ppm oxygen.
  • the aluminum-based alloy for the target has an aluminum grain size of less than 500 micrometers, preferably less than 200 micrometers. In one embodiment, the aluminum-based alloy for the target has boundary areas of less than 30 micrometers in size, preferably less than 10 micrometers.
  • the aluminum based alloy mentioned above is made by a continuous casting method using electromagnetic stirring
  • the aluminum-based alloy sputtering target in this aspect of the invention is made from the aluminum-based alloy that has been produced via the
  • a sputtering target for an electrode for semiconductor devices comprising aluminum and one or more alloying elements selected from the group of rare earth elements is provided, wherein the surface roughness
  • an electrode for a TFT of an LCD exhibits lower hillock growth and has a resistivity of less than 20 ⁇ cm when produced by use of sputtering target in this invention.
  • FIG. 1 shows a schematic diagram of a method of making an aluminum-based alloy film
  • FIG. 2 shows the appearance and the microstructure of a cast Al-Nd ingot produced by electromagnetic stirring:
  • (a) and (b) are the ingot cross sections (the length of the bar attached in the figure represents 12 mm)
  • (c) is a magnified view of the microstructure of the ingot (the length of the bar attached in the figure represents 50 micrometers)
  • (d) is a magnified SEM image of Nd rich area (i.e., a boundary area of the coexistent state) in (c) (the length of the bar attached in the figure represents 5 micrometers)
  • (e) is another SEM image of the microstructure of the Al-Nd ingot (the length of the bar attached in the figure represents 10 micrometers)
  • (f) is a magnified SEM image of Nd rich area (a boundary area of coexistent state) in (e) (the length of the bar attached in the figure represents 2 micrometers);
  • FIG. 3 shows the microstructure of a rolled aluminum-based alloy target:
  • (a) is a SEM image of the alloy target of transverse view with respect to the sputtering surface (the length of the bar attached in the figure represents 10 micrometers)
  • (b) is a SEM image of the alloy target of normal view with respect to the sputtering surface (the length of the bar attached in the figure represents 10 micrometers)
  • (c) is another SEM image of the alloy target material (the length of the bar attached in the figure represents 50 micrometers)
  • (d) is a magnified SEM image of Nd rich area (a boundary area of coexistent state) in (c) (the length of the bar attached in the figure represents 2 micrometers);
  • FIG. 4 shows the appearance and the microstructure of Al-Nd ingot produced by ordinary melting process;
  • (a) and (b) are the ingot cross sections (the length of the bar attached in the figures represents 12 mm),
  • (c) is a magnified view of the microstructure (the length of the bar attached in the figure represents 200 micrometers),
  • (d) is another SEM image of the microstructure of the Al-Nd ingot (the length of the bar attached in the figure represents 200 micrometers).
  • FIG. 1 schematically illustrates a process of making an aluminum-based alloy sputtering target and a process of making an electrode firm by sputtering an aluminum-based alloy target.
  • an aluminum-based master alloy indicated at 12, containing aluminum 14 and at least one rare earth metal (REM) indicated at 16 is produced using a continuous casting process.
  • the aluminum-based alloy is described below as an Al-Nd alloy, but it is to be understood that other REM and combinations of REMs may be used in the aluminum-based alloy without departing from the scope of the invention.
  • the alloy may contain one, two, or more additives selected from the group of rare earth elements.
  • REM is intended to include yttrium (Y), as well as the lanthanoid elements.
  • the lanthanoid elements contain elements from La, of atomic number 57, to Lu, of atomic number 71, in the periodic table.
  • the casting process can be a true continuous casting method or a semi-continuous method without departing from the scope of the invention. While REMs are preferred additives, it also should be understood that additional elements, such as Cu, Si, Ni, Zn, can also be used to improve alloy film properties such as contact resistance and electrochemical properties of the alloy and film made of such an alloy.
  • the final aluminum-based alloy 20 suitably contains Nd less than 3 at%, more preferably less than 1.0 at%, and even more desirably less than 0.5 at%. It is desirable that the atmosphere be controlled as would be understood by one skilled in the casting art. Desirably, the material is again rotary fluxed with Ar to degas the material and is continuously degassed within the Ar atmosphere during the casting process.
  • the aluminum-based alloy 20 suitably has an oxygen content of less than 100 ppm oxygen.
  • the alloy 20 is cast using a direct-chill (DC) casting method 22.
  • a suitable electromagnetic stirring (EMS) machine 24 is used during the solidification phase of casting.
  • the casting is enhanced by single-phase electromagnetic vibrations just prior to casting ring containing sufficient amount of turns per coil.
  • Suitable electromagnetic stirring current is between about 100 and 600 A. Casting conditions and tooling design are adjusted to promote favorable stirring by strategic placement of the mushy zone within the highest magnetic field area.
  • the microstructure of the metal is controlled by the magnetic field intensity and oscillation pattern of the EMS. Desired properties of the microstructure of the ingot will be set forth in more detail below. Example 1 and FIG.
  • microstructure of the ingot which is composed of the areas of aluminum grain (areas which contains undetectable or trace of additives by EPMA (Electron Probe Micro Analysis)) and the boundary areas of coexistent state comprising aluminum phase and aluminum-additive phase as shown in FIG. 2 (c) and (e).
  • the microstructure of the preferred aluminum-based alloy ingot shows that the size of the aluminum grains is less Irian 500 micrometers, more preferably less than 200 micrometers.
  • the width of the surrounding boundary areas of coexistent state is less than 30 micrometers, more preferably less than 10 micrometers.
  • the size of aluminum grains is less than 500 micrometers, more preferably less than 200 micrometers and the width of boundary areas of coexistent state is less than 30 micrometers, more preferably less than 10 micrometers.
  • a target for use in DC magnetron sputtering is then formed from the aluminum-based alloy billet using a thermomechanical process 26 such as pressing or rolling processes or both.
  • the thermomechanical treatment may also include an appropriate anneal step.
  • the target is formed by a method of rolling in a roll press starting from an ingot of the aliirninum-based alloy. Other suitable severe deformation mechanical processes such as extrusion may be used without departing from the scope of the invention.
  • the rolling process 26 can be accomplished using methods known to one skilled in the art. Accordingly, specific rolling details will not be provided herein.
  • the aluminum-based alloy is then deposited by sputtering at 28 to form an electrode for semiconductor devices.
  • Sputtering can be accomplished using methods known to one skilled in the art. Accordingly, specific sputtering details will not be provided herein.
  • Such an aluminum-based alloy target has an advantage in stabilizing the composition of the deposited aluminum-based alloy film or reducing the oxygen amount compared with typical composite targets.
  • all or part of the alloying elements in the aluminum-based alloy are in the solid-solution state in the deposited film.
  • the film is then heated or annealed, as shown schematically at 30 in FIG. 1, for about 30 min. to about 1 hour.
  • the annealing temperature is desirably between 150° to 400 0 C.
  • the aluminum-based alloy film containing RBM can satisfy the requirements of a high thermal stability (high hillock resistance) and a low resistivity before and after the annealing, after deposition. Desirably, the resistivity is reduced to lower than 20 ⁇ cm.
  • the aluminum-based alloy film can satisfy each requirement by selecting the most suitable alloy composition and heating condition.
  • Al-REM alloy targets produced by ordinary melting processes usually have a microstructure of large grains and inhomogenity, which result in unstable sputtering performance. This results in non-uniform sputtering rates and film composition during sputtering. Additionally, such targets tend to cause an anomalous discharge resulting in the generation of undesirable particles on the films.
  • the aluminum based alloy of this invention which is produced by using electromagnetic stirring has a microstructure of homogeneous and fine grains and has less oxygen, therefore a more stable discharge can be attained during sputtering of targets from the EMS methods and thin films of low resistivity and high hillock resistance can be made. These properties are desirable for electrodes for semiconductor devices.
  • the present invention will be more clearly understood by way of the following examples which are included for illustrative purposes.
  • a binary aluminum-based alloy was produced by a continuous casting process using electromagnetic stirring. First, pure Al was melted in high vacuum at a temperature greater than 1000 0 C. Then, pure Nd was systematically added to obtain an Al-Nd alloy with a composition ranging between 5 and 50 wt% Nd. This Al-Nd alloy served as a master alloy for continuous casting.
  • the furnace Prior to continuous casting, the furnace was prepared by melting additional pure Al under Ar, at between 700-730 0 C. Then, the Al-Nd ingots were added to achieve the desired final alloy composition. The material was again rotary fluxed with Ar for degassing, and continuously degassed within the Ar atmosphere during casting. The casting was done by a direct-chill method, enhanced by single-phase electromagnetic vibrations just prior to casting ring.
  • FIG. 2 shows ingot cross sections.
  • FIG. 2 (c) shows the microstructure of typical ingot areas. Darker areas in FIG. 2 (c) represent the boundary areas of coexistent state comprising Al phase and Al-additive phase, while the light gray areas are the areas of Al grains. As shown in FIG. 2 (c), the areas of Al grains are surrounded by the boundary areas of coexistent state, and said boundary areas exist as layers surrounding said areas of Al grains and separating said areas of Al grains from each other.
  • the microstructure of the Al-alloy ingot shows that the size of the Al grains that are surrounded by the boundary areas of the coexistent state is less than 500 micrometers, and the width of the boundary areas is less than 10 micrometers.
  • FIG. 2 (d) shows the magnified SEM image of Nd rich area (a boundary area of coexistent state) in FIG. 2 (c). Black dots in FIG. 2 (d) are Al-Nd phase such as an intermetallic compound, and light gray areas are the Al phase.
  • the aluminum-based alloy manufactured by continuous casting with electromagnetic stirring has a microstructure of small and homogeneous grains.
  • FIG. 2 (e) is another SEM image of the microstructure of the Al-Nd ingot
  • FIG. 2 (f) is a magnified SEM image of Nd rich area (a boundary area of coexistent state) in FIG. 2 (e).
  • Black areas in FIG. 2 (e) are the areas of Al grains and light gray areas are the boundary areas of the coexistent state.
  • Light gray areas in FIG. 2 (f) are the areas of Al-additive phase and darker gray areas are the areas of Al phase.
  • An Al alloy sputtering target was formed by the method of rolling in a roll press starting from the ingot described in Example 1.
  • the microstructure of the rolled aluminum-based alloy target of Nd content of 0.6 at% is shown in FIG. 3.
  • the microstructure of the Al alloy sputtering target comprises areas of Al grains and boundary areas of the coexistent state comprising Al phase and Al-additive phase.
  • FIG. 3 (a) shows the magnified SEM image of the Al alloy target of transverse view with respect to the sputtering surface
  • FIG 3 (b) shows the magnified SEM image of normal view with respect to the sputtering surface. Dark gray areas in FIG. 3 (a) and FIG.
  • FIG. 3 (b) represent the boundary areas of the coexistent state, and light gray areas represent areas of Al grains.
  • FIG. 3 (c) is another SEM image of the microstructure of the Al alloy target
  • FIG. 3 (d) is a magnified SEM image of Nd rich area (a boundary area of coexistent state) in FIG. 3 (c).
  • Black areas in FIG. 3 (c) are the areas of Al grains, and light gray areas are the boundary areas of coexistent state.
  • the size of aluminum grains of the sputtering target was greater than 10 micrometers and less than 500 micrometers, and the width of the boundary areas of the coexistent state was less than 30 micrometers.
  • Black areas in FIG. 3 (d) are the areas of Al phase
  • light gray areas are the areas of Al-additive phase.
  • Al alloy sputtering targets of Al-Nd alloy with several compositions were made in the same way as Example 2 (using EMS and rolling). The resulted Al-Nd alloy contained less than 100 ppm oxygen. Sputtering target of Al-Nd alloy with several compositions were also made using atomized Al-Nd alloy powder and hot isostatic press for comparison. The resulted Al-Nd alloy contained about 1000 ppm oxygen (Comparative Example 1). Then Al-Nd alloy films with 200 nm thickness were deposited on glass substrate by DC magnetron sputtering using these targets. [0041] The films were then annealed at 35O 0 C for 1 hour in nitrogen atmosphere.
  • resistivity was measured by conventional 4 point probe method.
  • Hillock density was measured as follows :
  • Al-Nd film with sufficiently low resistivity and low hillock density can be obtained by using the Al alloy sputtering target containing oxygen of less than 100 ppm and Nd of less than 0.5 at% .
  • Al alloy sputtering target was produced using Al-0.6at% Nd-alloy
  • a sputtering target of Al-Nd alloy of Nd content of 2.0 at% was produced by an ordinary melting method, where electromagnetic stirring was not applied in the process (Comparative Example 2).
  • the content of oxygen in this target was also less than 100 ppm.
  • HG. 4 The microstructure of this target produced by an ordinary melting method is shown in HG. 4.
  • Light gray areas in FIG. 4 (c) represent the areas of Al grains, dark gray areas represent the areas containing Al-additive phase.
  • HG. 4 (d) shows another SEM image of the microstructure of the ingot, where dark areas represent the areas of Al grains, light gray areas represent the areas containing Al-additive phase. The bars attached in FIG.
  • the number of the particles on the Al-Nd alloy films was much larger than that of the Example 4 where the sputtering target was manufactured by using electromagnetic stirring.
  • Table 4 shows that the sputtering target with low oxygen content generates less particles on the Al alloy films, compared to the sputtering target with high oxygen content.
  • Example 2 (using EMS and rolling).
  • another sputtering target of Al-0.2at%Nd-alloy was also made by an ordinary melting method, in which electromagnetic stirring was not applied (Comparative Example 4).
  • Al-Nd alloy films with 200 nm thickness were deposited on silicon substrates with 200 mm diameter and 0.5 mm thickness by DC magnetron sputtering using these targets.
  • pre-sputtering of 3 hours 15 Wh/cm 2 ) was performed as an initial discharge for the targets, then the surface roughness of erosion area of the targets was measured.
  • Sputtering targets having low surface roughness (i.e., less than about 1.5 micrometers) in the erosion area after discharge can be obtained by using electromagnetic stirring, by which the aluminum-based alloy having a microstructure with homogeneous and fine grains is attained.
  • Al alloy sputtering targets consisting of aluminum-based alloy produced by using electromagnetic stirring in this invention have a microstructure of homogeneous and fine grains and have less oxygen, therefore stable discharge can be attained and thin films of low resistivity and high hillock resistance which are necessary for electrodes for semiconductor devices can be obtained.
  • the microstructure of homogeneous and fine grains and less oxygen content also result in the smooth surface of the erosion area of the sputtering target during the deposition process, which suppress the anomalous discharge and reduce the generation of particles in the film deposition.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Cible de pulvérisation utilisée pour équiper des dispositifs FPD d'une électrode. L'électrode cible ainsi obtenue inhibe la génération de monticules et fait preuve d'une résistivité réduite. De par ces propriétés, l'électrode se prête à une utilisation comme transistor à film mince dans un écran à cristaux liquides à matrice active et analogues. L'électrode pour dispositifs à semi-conducteurs est en alliage d'aluminium contenant un ou plusieurs éléments d'alliage sélectionnés dans les éléments d'alliage de terres rares présents dans une quantité totale comprise entre 0,01 et 3 % . Le procédé de fabrication d'une cible qui, après pulvérisation, permet d'obtenir une électrode comprend les étapes de coulée en continu avec agitation électromagnétique, les éléments mentionnés sont dissous dans une matrice Al, et de précipitation d'une partie ou de tous les éléments dissous dans la matrice Al comme composés intermétalliques pendant la solidification. La cible est en alliage d'aluminium contenant les éléments précités et s'obtient par un procédé thermomécanique, de laminage ou d'extrusion.
PCT/US2005/035940 2004-10-05 2005-10-04 Cible de pulverisation assurant la formation d'un film d'electrode pour dispositifs a semi-conducteurs et son procede de fabrication WO2006041989A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61601604P 2004-10-05 2004-10-05
US60/616,016 2004-10-05

Publications (2)

Publication Number Publication Date
WO2006041989A2 true WO2006041989A2 (fr) 2006-04-20
WO2006041989A3 WO2006041989A3 (fr) 2006-08-03

Family

ID=36088357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/035940 WO2006041989A2 (fr) 2004-10-05 2005-10-04 Cible de pulverisation assurant la formation d'un film d'electrode pour dispositifs a semi-conducteurs et son procede de fabrication

Country Status (2)

Country Link
TW (1) TW200623242A (fr)
WO (1) WO2006041989A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102744256A (zh) * 2012-06-25 2012-10-24 江苏南瑞淮胜电缆有限公司 高导电率铝杆的连铸连轧生产方法
US20130233706A1 (en) * 2010-10-08 2013-09-12 Kobelco Research Institute Inc. Al-based alloy sputtering target and production method of same
US8992748B2 (en) 2006-03-06 2015-03-31 Tosoh Smd, Inc. Sputtering target
CN114959595A (zh) * 2021-12-17 2022-08-30 常州苏晶电子材料有限公司 溅射用高纯铝钕合金靶材及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521163A1 (fr) * 1991-01-17 1993-01-07 Ryoka Matthey Corporation Couche de cablage a base d'alliage d'aluminium, son procede de fabrication et cible de depot d'alliage d'aluminium par pulverisation
JP2001093862A (ja) * 1999-09-21 2001-04-06 Vacuum Metallurgical Co Ltd 液晶ディスプレイ用の電極・配線材及びスパッタリングターゲット
JP2004055842A (ja) * 2002-07-19 2004-02-19 Kobe Steel Ltd 半導体デバイス電極／配線、半導体デバイス電極用膜／配線用膜並びにＡｌ合金薄膜形成用スパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521163A1 (fr) * 1991-01-17 1993-01-07 Ryoka Matthey Corporation Couche de cablage a base d'alliage d'aluminium, son procede de fabrication et cible de depot d'alliage d'aluminium par pulverisation
JP2001093862A (ja) * 1999-09-21 2001-04-06 Vacuum Metallurgical Co Ltd 液晶ディスプレイ用の電極・配線材及びスパッタリングターゲット
JP2004055842A (ja) * 2002-07-19 2004-02-19 Kobe Steel Ltd 半導体デバイス電極／配線、半導体デバイス電極用膜／配線用膜並びにＡｌ合金薄膜形成用スパッタリングターゲット

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HAWKSWORTH A ET AL: "Solidification microstructure selection in the Al-rich Al-La, Al-Ce and Al-Nd systems" JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 197, no. 1-2, 1 February 1999 (1999-02-01), pages 286-296, XP004153139 ISSN: 0022-0248 *
K.B. HYDE ET AL: "The growth morphology and nucleation mechanism of primary Ll2Al3Sc particles in Al-Sc alloys" MATERIALS SCIENCE FORUM, vol. 331-337, 2000, pages 1013-1018, XP008065165 ch *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21, 3 August 2001 (2001-08-03) & JP 2001 093862 A (VACUUM METALLURGICAL CO LTD), 6 April 2001 (2001-04-06) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12, 5 December 2003 (2003-12-05) & JP 2004 055842 A (KOBE STEEL LTD), 19 February 2004 (2004-02-19) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8992748B2 (en) 2006-03-06 2015-03-31 Tosoh Smd, Inc. Sputtering target
US20130233706A1 (en) * 2010-10-08 2013-09-12 Kobelco Research Institute Inc. Al-based alloy sputtering target and production method of same
CN102744256A (zh) * 2012-06-25 2012-10-24 江苏南瑞淮胜电缆有限公司 高导电率铝杆的连铸连轧生产方法
CN114959595A (zh) * 2021-12-17 2022-08-30 常州苏晶电子材料有限公司 溅射用高纯铝钕合金靶材及其制造方法
CN114959595B (zh) * 2021-12-17 2024-03-29 常州苏晶电子材料有限公司 溅射用高纯铝钕合金靶材及其制造方法

Also Published As

Publication number Publication date
TW200623242A (en) 2006-07-01
WO2006041989A3 (fr) 2006-08-03

Similar Documents

Publication Publication Date Title
JP3365954B2 (ja) 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
US20020014406A1 (en) Aluminum target material for sputtering and method for producing same
KR100210525B1 (ko) 배선형성용 몰리브덴-텅스텐재, 배선형성용 몰리브덴-텅스텐 타깃과 그 제조방법 및 몰리브덴-텅스텐 배선박막
JP4223511B2 (ja) 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線
JP4237742B2 (ja) スパッタリングターゲットの製造方法
JP2004169136A (ja) 銅合金スパッタリングターゲット及び半導体素子配線
JPH0745555A (ja) 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
KR20090051267A (ko) 미세 그레인 사이즈 및 높은 전자 이동 저항성을 구비한 구리 스퍼터링 타겟 및 이를 제조하는 방법
JP2009263768A (ja) Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4237479B2 (ja) スパッタリングターゲット、Ａｌ合金膜および電子部品
TW201144463A (en) Sputtering target composed of aluminum-base alloy
JP3825191B2 (ja) アルミニウム合金スパッタリングターゲット材料
WO2007103014A2 (fr) Cible de pulvérisation cathodique destinée à la formation du film de câblage constitué d'alliages d'aluminium sous forme de micro-alliages
US10276356B2 (en) Copper alloy sputtering target
JP3212024B2 (ja) Ａｌ系スパッタリング用タ−ゲット材およびその製造方法
WO2006041989A2 (fr) Cible de pulverisation assurant la formation d'un film d'electrode pour dispositifs a semi-conducteurs et son procede de fabrication
EP2002027B1 (fr) Cibles et films en alliage ternaire d'aluminium
JPH11293454A (ja) Ａｌ系スパッタリング用ターゲット材及びその製造方法
JPH1060636A (ja) Ａｌ系スパッタリング用ターゲットおよびその製造方法
JP3606451B2 (ja) Ａｌ系電極膜の製造方法
JPH06299354A (ja) Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット
JPH10147860A (ja) Ａｌ系スパッタリング用タ−ゲット材およびその製造方法
JP3509011B2 (ja) Ａｌ系スパッタリング用ターゲット材のための作製原料の微細化方法
JP4213699B2 (ja) 液晶表示装置の製造方法
JP2004193546A (ja) 半導体装置配線シード層形成用銅合金スパッタリングターゲット

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05802658

Country of ref document: EP

Kind code of ref document: A2