WO2006033070A1 - Memory control with selective retention - Google Patents

Memory control with selective retention Download PDF

Info

Publication number
WO2006033070A1
WO2006033070A1 PCT/IB2005/053062 IB2005053062W WO2006033070A1 WO 2006033070 A1 WO2006033070 A1 WO 2006033070A1 IB 2005053062 W IB2005053062 W IB 2005053062W WO 2006033070 A1 WO2006033070 A1 WO 2006033070A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory circuit
memory
signal
switching
state
Prior art date
Application number
PCT/IB2005/053062
Other languages
English (en)
French (fr)
Inventor
Cornelis H. Van Berkel
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Priority to US11/575,865 priority Critical patent/US7804732B2/en
Priority to DE602005019758T priority patent/DE602005019758D1/de
Priority to JP2007531943A priority patent/JP4774526B2/ja
Priority to KR1020077006424A priority patent/KR101158154B1/ko
Priority to AT05783548T priority patent/ATE459961T1/de
Priority to EP05783548A priority patent/EP1794756B1/en
Publication of WO2006033070A1 publication Critical patent/WO2006033070A1/en
Priority to US12/871,834 priority patent/US8305828B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

Definitions

  • An SRAM is a volatile memory device and will thus loose all of its stored data if the power being supplied to the device is switched off.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
  • Food Preservation Except Freezing, Refrigeration, And Drying (AREA)
PCT/IB2005/053062 2004-09-22 2005-09-19 Memory control with selective retention WO2006033070A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/575,865 US7804732B2 (en) 2004-09-22 2005-09-19 Memory control with selective retention
DE602005019758T DE602005019758D1 (de) 2004-09-22 2005-09-19 Speichersteuerung mit selektiver retention
JP2007531943A JP4774526B2 (ja) 2004-09-22 2005-09-19 選択的保持方式によるメモリ制御
KR1020077006424A KR101158154B1 (ko) 2004-09-22 2005-09-19 메모리 회로 및 데이터 보존 제어 방법
AT05783548T ATE459961T1 (de) 2004-09-22 2005-09-19 Speichersteuerung mit selektiver retention
EP05783548A EP1794756B1 (en) 2004-09-22 2005-09-19 Memory control with selective retention
US12/871,834 US8305828B2 (en) 2004-09-22 2010-08-30 Memory control with selective retention

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04104588 2004-09-22
EP04104588.1 2004-09-22

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/575,865 A-371-Of-International US7804732B2 (en) 2004-09-22 2005-09-19 Memory control with selective retention
US12/871,834 Continuation US8305828B2 (en) 2004-09-22 2010-08-30 Memory control with selective retention

Publications (1)

Publication Number Publication Date
WO2006033070A1 true WO2006033070A1 (en) 2006-03-30

Family

ID=35431547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/053062 WO2006033070A1 (en) 2004-09-22 2005-09-19 Memory control with selective retention

Country Status (8)

Country Link
US (2) US7804732B2 (ja)
EP (1) EP1794756B1 (ja)
JP (1) JP4774526B2 (ja)
KR (1) KR101158154B1 (ja)
CN (1) CN100568377C (ja)
AT (1) ATE459961T1 (ja)
DE (1) DE602005019758D1 (ja)
WO (1) WO2006033070A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1936627A1 (en) * 2006-12-22 2008-06-25 STMicroelectronics S.r.l. Reduction of power consumption of an integrated electronic system comprising distinct static random access storage resources
JP2010528401A (ja) * 2007-05-18 2010-08-19 クゥアルコム・インコーポレイテッド メモリアレイにおけるリーク電流低減方法および装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226857B2 (en) 2004-07-30 2007-06-05 Micron Technology, Inc. Front-end processing of nickel plated bond pads
EP1794756B1 (en) * 2004-09-22 2010-03-03 Nxp B.V. Memory control with selective retention
US7675806B2 (en) * 2006-05-17 2010-03-09 Freescale Semiconductor, Inc. Low voltage memory device and method thereof
KR101488166B1 (ko) * 2008-03-26 2015-02-02 삼성전자주식회사 정적 메모리 장치 및 라이트 어시시트 기능을 구비하는에스램
US8230239B2 (en) * 2009-04-02 2012-07-24 Qualcomm Incorporated Multiple power mode system and method for memory
DE102009020731A1 (de) * 2009-05-11 2010-11-25 Continental Automotive Gmbh Verfahren und Steuereinheit zum Betreiben eines flüchtigen Speichers, Schaltungsanordnung und Fahrtenschreiber
JP2011123970A (ja) 2009-12-14 2011-06-23 Renesas Electronics Corp 半導体記憶装置
CN102934072A (zh) 2010-06-11 2013-02-13 飞思卡尔半导体公司 信息处理设备及方法
WO2011154775A1 (en) * 2010-06-11 2011-12-15 Freescale Semiconductor, Inc. Memory unit, information processing device, and method
US8804449B2 (en) 2012-09-06 2014-08-12 Micron Technology, Inc. Apparatus and methods to provide power management for memory devices
JP6030987B2 (ja) * 2013-04-02 2016-11-24 ルネサスエレクトロニクス株式会社 メモリ制御回路
US10586795B1 (en) * 2018-04-30 2020-03-10 Micron Technology, Inc. Semiconductor devices, and related memory devices and electronic systems
US11152046B1 (en) 2020-07-17 2021-10-19 Apple Inc. Sram bit cell retention
CN112711548B (zh) * 2021-01-11 2023-05-16 星宸科技股份有限公司 内存装置、图像处理芯片以及内存控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5615162A (en) * 1995-01-04 1997-03-25 Texas Instruments Incorporated Selective power to memory
US5928365A (en) * 1995-11-30 1999-07-27 Kabushiki Kaisha Toshiba Computer system using software controlled power management method with respect to the main memory according to a program's main memory utilization states
US20040071032A1 (en) * 2001-10-23 2004-04-15 Hitach, Ltd. Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133117A (ja) * 1990-09-26 1992-05-07 Canon Inc 情報処理装置
JPH09212416A (ja) * 1995-11-30 1997-08-15 Toshiba Corp 計算機システムおよび計算機システムの電力管理方法
JP2951302B2 (ja) * 1997-01-31 1999-09-20 松下電器産業株式会社 半導体装置および半導体装置を制御する方法
US6512705B1 (en) * 2001-11-21 2003-01-28 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices
US6839299B1 (en) * 2003-07-24 2005-01-04 International Business Machines Corporation Method and structure for reducing gate leakage and threshold voltage fluctuation in memory cells
US7061820B2 (en) * 2003-08-27 2006-06-13 Texas Instruments Incorporated Voltage keeping scheme for low-leakage memory devices
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same
US7227804B1 (en) * 2004-04-19 2007-06-05 Cypress Semiconductor Corporation Current source architecture for memory device standby current reduction
EP1794756B1 (en) * 2004-09-22 2010-03-03 Nxp B.V. Memory control with selective retention
JP2006146998A (ja) * 2004-11-17 2006-06-08 Kawasaki Microelectronics Kk メモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5615162A (en) * 1995-01-04 1997-03-25 Texas Instruments Incorporated Selective power to memory
US5928365A (en) * 1995-11-30 1999-07-27 Kabushiki Kaisha Toshiba Computer system using software controlled power management method with respect to the main memory according to a program's main memory utilization states
US20040071032A1 (en) * 2001-10-23 2004-04-15 Hitach, Ltd. Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1936627A1 (en) * 2006-12-22 2008-06-25 STMicroelectronics S.r.l. Reduction of power consumption of an integrated electronic system comprising distinct static random access storage resources
JP2010528401A (ja) * 2007-05-18 2010-08-19 クゥアルコム・インコーポレイテッド メモリアレイにおけるリーク電流低減方法および装置

Also Published As

Publication number Publication date
US8305828B2 (en) 2012-11-06
EP1794756B1 (en) 2010-03-03
DE602005019758D1 (de) 2010-04-15
KR20070058514A (ko) 2007-06-08
JP4774526B2 (ja) 2011-09-14
CN101061547A (zh) 2007-10-24
ATE459961T1 (de) 2010-03-15
EP1794756A1 (en) 2007-06-13
KR101158154B1 (ko) 2012-06-19
CN100568377C (zh) 2009-12-09
US7804732B2 (en) 2010-09-28
JP2008513923A (ja) 2008-05-01
US20110051501A1 (en) 2011-03-03
US20080259699A1 (en) 2008-10-23

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