WO2006030714A1 - Solution destinée à l’élimination d'une couche de cuivre détériorée incluant de l'oxyde de cuivre, et méthode d'utilisation de ladite solution - Google Patents

Solution destinée à l’élimination d'une couche de cuivre détériorée incluant de l'oxyde de cuivre, et méthode d'utilisation de ladite solution Download PDF

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Publication number
WO2006030714A1
WO2006030714A1 PCT/JP2005/016652 JP2005016652W WO2006030714A1 WO 2006030714 A1 WO2006030714 A1 WO 2006030714A1 JP 2005016652 W JP2005016652 W JP 2005016652W WO 2006030714 A1 WO2006030714 A1 WO 2006030714A1
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Prior art keywords
acid
mass
parts
copper
residue
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PCT/JP2005/016652
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English (en)
Japanese (ja)
Inventor
Shingo Nakamura
Fumihiro Kamiya
Takehiko Kezuka
Takashi Kanemura
Mitsushi Itano
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Daikin Industries, Ltd.
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Publication of WO2006030714A1 publication Critical patent/WO2006030714A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

Definitions

  • the present invention relates to a semiconductor manufacturing process or a liquid crystal panel element, such as reworking of some processes such as formation of damascene and dual damascene structures in a Cu / Low-k multilayer wiring structure and lithography (rework), Copper oxide and / or dry etching regardless of the presence or absence of unnecessary materials such as resists, antireflection films, filling materials and dry etching residues by suppressing chemical etching on low-k films and silicon-containing films. And / or removal process for selectively removing the copper oxide layer including Cu oxide and Z or cuprate oxide in the Cu / low-k multilayer wiring structure formed during ashing) and the removal The present invention relates to a method of removing these using a liquid.
  • A1 or A1 alloy or the like was used as a wiring material, and an SiO film as an interlayer insulating film
  • Cu with a low resistance value is used as the wiring material, and a low-k film (low induction) with low wiring capacitance is used as an interlayer insulating film instead of the SiO film.
  • a Cu / low-k multilayer wiring structure using an electrical conductivity film has been developed.
  • a Cu / low-k multilayer wiring structure In a Cu / low-k multilayer wiring structure, first, grooves (trench) and holes (via holes) are formed in the low-k film by dry etching, and wiring materials such as copper are mainly used for the processed parts. Processing is performed by a so-called damascene method for forming a buried and wiring structure. Furthermore, in the dual damascene method, a trench and a via hole for wiring are simultaneously formed in a low-k film, and then a wiring material such as copper is embedded.
  • a via hole is formed first, followed by a via first process in which a trench for wiring is formed.
  • a trench for wiring is first formed, and then the via hole is formed.
  • an embedding material is often used. Biaho After the tool is formed by dry etching, a buried material is buried, lithography for forming a trench is performed, and dry etching is performed. Thereafter, the embedding material is selectively removed. On the other hand, no filling material is used in processes such as dual hard mask processes and triple hard mask processes.
  • ashing was performed with plasma containing oxygen radicals in order to remove unnecessary materials such as resist, antireflection film and etching residue.
  • a copper alteration layer containing copper oxide which is damaged by dry etching and / or ashing, is formed on the surface of the Cu metal wiring.
  • a metal such as near metal TaN or wiring material in a damascene or dual damascene trench or via hole
  • copper oxide or the above-mentioned copper altered layer is formed at the contact with the wiring layer such as Cu in the lower layer. If so, the resistance increases and causes a failure of the semiconductor device.
  • copper oxides and / or cuprates damaged by dry etching and / or ashing may be used.
  • the altered copper layer containing material must be removed selectively while suppressing Cu corrosion and chemical etching of the low-k film.
  • a copper-modified layer containing copper oxide and / or copper oxide that has been damaged by dry etching and / or ashing on the surface of the copper wiring is now commercially available. If a conventional polymer stripping solution such as a resist is used for removal, the films that make up the device, such as copper and silicon-containing films and low-k films, will be etched and cannot be removed selectively. Processing as designed is not possible. In particular, when unnecessary substances such as resist, antireflection film, filling material and dry etching residue coexist, these forces S are hindered and it is further difficult.
  • copper oxide and copper oxide formed by damage caused by dry etching or ashing and / or copper containing copper oxide damaged by dry etching and / or ashing Copper oxide can be removed by using hydrochloric acid or hydrofluoric acid diluted with water to remove the altered layer.
  • the altered copper layer containing cuprates contains a large amount of dissociated H + that is difficult to remove, so copper is easily corroded! /.
  • an undesired force copper oxide such as a resist, an antireflection film, a filling material, and a dry etching residue, and / or a copper altered layer containing copper oxide damaged by dry etching and / or ashing
  • the interlayer insulating film damaged by dry etching with these chemicals especially when the interlayer insulating film is porous low-k, it is etched significantly and cannot be processed as designed.
  • Patent Document 1 discloses a cleaning agent for a copper film after CMP, and does not mention removal of copper oxide generated after force etching or ashing.
  • Patent Document 1 only polycarboxylic acids such as citrate, malic acid, malonic acid, and succinic acid are exemplified as carboxylic acids that can be blended in the cleaning liquid.
  • Patent Document 2 describes a power copper oxide that describes a cleaning liquid for removing polymer residues. It is described for the removal of the copper altered layer containing !!
  • Patent Document 1 Special Table 2001— 521285
  • Patent Document 2 JP-A-10-256210
  • the present invention suppresses etching with a chemical solution on a silicon-containing film or a low-k film in the formation of a damascene or dual damascene structure in a Cu / low-k multilayer wiring structure, Alternatively, a removal solution for selectively removing the copper alteration layer containing the copper oxide of the Cu / low-k multilayer wiring structure damaged by dry etching and / or ashing while suppressing copper corrosion. It is to provide.
  • the present inventor uses a solution having a basic composition of monocarboxylic acid and water to form a cuprate film formed on the surface of copper in a short time and / or dry etching.
  • the present inventors have found that it is possible to remove a copper-altered layer containing a copper oxide having a Cu / low-k multilayer wiring structure damaged by ashing, and completed the present invention.
  • the present invention is a residue removal solution for a copper-altered layer containing a copper oxide having a Cu / low-k multilayer wiring structure, and a method for removing the residue from the copper-altered layer. And a residue removal treatment product
  • Monocarboxylic acid strength The residue removing solution according to any one of Items 1 to 8, which is at least one selected from the group force consisting of formic acid, acetic acid, propionic acid, butyric acid, and trifluoroacetic acid.
  • Fluorine compound power The residue removing liquid according to item 3 or 4, which is at least one selected from the group power of hydrogen fluoride and ammonium fluoride.
  • Sulfur-containing compounds with unshared electrons oxygen and Z or unshared electrons with nitrogen with unshared electrons Sulfides, mercaptans, thiocarboxylic acids, thioacetamides, thioureas, thiadiazoles, Item 7.
  • Polycarboxylic acid strength The group power consisting of oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, phosphoric acid, citrate, and tartaric acid. Residue removal solution.
  • the removal liquid of the present invention suppresses etching of the removal liquid on the silicon-containing film and the low-k film, and is formed on the surface of a copper thin film such as a copper wiring formed on the wafer, an electrode, a copper layer, or the like.
  • the copper oxide and / or the damaged layer containing copper oxide damaged by dry etching and / or ashing can be selectively removed with respect to copper.
  • the residue removing solution for a copper-altered layer containing a copper oxide having a Cu / low-k multilayer wiring structure of the present invention (hereinafter referred to as “the removing solution of the present invention”) is a copper oxide film and / or Copper altered layer containing copper oxide with Cu / low-k multilayer wiring structure damaged by dry etching and / or ashing (hereinafter may be abbreviated as “copper oxide film and / or copper altered layer residue”) It is characterized by a combination of its solubility in copper residues and its anticorrosive effect on copper.
  • the removal liquid of the present invention is suitable for removing cuprates formed on a copper surface in a wafer formed using copper (Cu) as a conductive metal.
  • copper oxide formed when oxygen-containing plasma is used during dry etching and Z or ashing is used during dry etching and Z or ashing
  • Another example is a natural oxide film formed by naturally oxidizing a metal when exposed to the atmosphere due to movement between processes.
  • copper oxides include CuO, Cu 0, Cu (OH) and the like. Damage caused by dry etching and / or ashing
  • the copper-altered layer containing copper oxide is an alteration made of a mixture of a copper oxide that has been damaged and / or fluorinated by dry etching and / or ashing, and a mixture thereof. Layer, with increased electrical resistance. This altered copper layer also has copper strength, which is oxidized and / or fluorinated copper oxide and wiring, so its electrical resistance is copper It becomes an insulating layer close to an oxide.
  • the thickness of the cuprate is not limited, it is usually about 1 to 80A, preferably about 1 to 40A.
  • the thickness of the damaged copper layer containing cuprate oxide damaged by dry etching and / or ashing is not limited and varies depending on the conditions due to dry etching or ashing. Usually, it is adjusted in the process so that the amount of cuprate is reduced as much as possible.
  • the thickness of the deteriorated copper layer is usually about 500 A or less, preferably about 1 to 300 A.
  • the removal solution of the present invention is obtained by mixing a monocarboxylic acid and water at a specific ratio, thereby maintaining a copper oxide film and / or dry etching and / or ashing while maintaining an anticorrosive effect on copper. Residue of damaged copper layer containing copper oxide (CuO, Cu 0, Cu (
  • the preferred monocarboxylic acid used in the present invention is infinitely soluble in water, even if the composition hardly changes due to evaporation or consumption of the components, A sufficient amount of monocarboxylic acid can be supplied to the cuprate film and / or the copper altered layer residue. Therefore, a very stable removal effect of the copper oxide film and / or the altered copper layer residue can be exhibited. Further, by increasing the amount of monocarboxylic acid, even when a resist containing an organic component, an antireflection film, a filling material, and a dry etching residue coexist, these can be removed simultaneously. Therefore, regardless of the presence or absence of such unnecessary materials, the copper oxide film and / or the copper altered layer residue can be removed.
  • polycarboxylic acid such as dicarboxylic acid or tricarboxylic acid, its salt, or monocarboxylic acid salt
  • the effect of dissolving the copper oxide film and / or the copper altered layer residue is small. It takes time to remove.
  • polycarboxylic acids such as dicarboxylic acids such as maleic acid form chelate with copper when used alone without the addition of monocarboxylic acid, and exhibit an effect of dissolving copper rather than an anticorrosive effect.
  • polycarboxylic acids such as dicarboxylic acids, salts thereof, and monocarboxylates.
  • NH resulting from the equilibrium of NH + NH + H + is complexed with copper.
  • the organic solvent added to the removal liquid of the present invention further improves the solubility of the resist containing a copper oxide film and / or a copper-modified layer residue and an organic component, an antireflection film, a filling material, and a dry etching residue. . Along with this, it has an effect of adjusting the balance between solubility and anticorrosion by providing an anticorrosion effect.
  • the fluorine compound may be added to add an effect of removing residues after dry etching and / or ashing including these.
  • a substance that dissolves copper may be added as a small amount of additive.
  • This additive is a substance that generates ions and molecules that form complexes with copper, such as ammonium monocarboxylic acid salts.
  • an anticorrosive agent may be added.
  • a surfactant may be added to bring the chemical solution into contact with the fine pattern.
  • the composition of the chemical solution of the present invention is determined by a method (process) for manufacturing a semiconductor device and a material (particularly an interlayer insulating film) used.
  • the main removal object of the removal liquid of the present invention is (1) copper oxide and / or a copper-modified layer, and (2) Si-containing residue.
  • ILDs interlayer dielectrics
  • ILD damage layers damaged by dry etching and / or ashing There are ILDs (interlayer dielectrics) such as k-films, silicon-containing films, and ILD damage layers damaged by dry etching and / or ashing.
  • Additional removal objects attached to the main objects include (3) inorganic embedding material residue, (4) resist residue, (5) anti-reflection film residue, and (6) organic embedding material residue.
  • a copper oxide layer and / or a copper altered layer after dry etching and / or ashing is used.
  • monocarboxylic acid and water are essential, and adjustments such as increasing the removal effect can be made by adding a fluorine compound or an organic solvent.
  • the removal liquid contains fluorine. It is desirable to include a compound.
  • an object having a Si-containing residue at the same time as the copper oxide and / or copper-modified layer it can be removed simultaneously with water and monocarboxylic acid alone.
  • a smaller amount of fluorine compound (water and monocarboxylic acid power) The Si-containing residue can be removed more easily by compounding with the removal solution of the invention (about 0.01 to 1 part by mass per 100 parts by mass).
  • Silicon-containing films, ILD (low-k films), and ILD damage layers are excluded when a fluorine compound is added. If there is a need to suppress these damages, do not contain fluorine compounds or use a small amount (0.1 parts by mass for 100 parts by mass of the removal solution of the present invention). The following) is preferable.
  • the organic solvent contains an organic component and improves the removal effect of residues (resist residue, BARC residue, organic embedding material residue, etc.), adjusts the dissociation of the fluorine compound, and controls the copper oxide.
  • the removal effect can be increased and the anticorrosion effect of copper can be imparted.
  • monocarboxylic acid has such an effect, and the organic solvent reinforces the effect of monocarboxylic acid.
  • the monocarboxylate needs to be a salt of a monocarboxylic acid that can be used in the removing solution. By covering this monocarboxylate, the dissociation of the monocarboxylic acid is suppressed and the removal effect is controlled. In the case where the monocarboxylate is not stably present, the organic base gives the same effect as the monocarboxylate in addition to the removal solution.
  • the monocarboxylic acid salt includes an ammonium salt of a monocarboxylic acid, a hydroxylamine salt of a monocarboxylic acid, a primary, secondary, tertiary or tertiary ammine salt of a monocarboxylic acid, A quaternary ammonium salt is exemplified, and an ammonium salt is preferable.
  • the organic base includes ammonia, hydroxylamine, primary, secondary or tertiary amine, quaternary ammonia such as TMAH (Tetramethylammonium hydroxide). Um.
  • the resist, the antireflection film, and the filling material contain a large amount of organic components in the generated residue due to dry etching and / or ashing, they can be increased by increasing the amount of monocarboxylic acid or organic solvent. Can be removed efficiently.
  • a film called a porous low-k or ultra low-k having a relative dielectric constant of around 2.4 or lower may be used as the low-k film. These films are easily etched by a chemical solution. Therefore, in such a case, it is preferable to add a small amount of fluorine compound such as hydrogen fluoride or not. Also, if a damaged layer is formed in the interlayer insulating film after dry etching and / or ashing, and it is desired to leave it without removing it, it is preferable not to add it with the power to reduce the fluorine compound. [0038] In one preferred embodiment of the present invention, at least one of sulfur-containing compounds having unshared electrons having oxygen having unshared electrons and Z or nitrogen having unshared electrons may be further added. These can be effective in preventing copper corrosion.
  • organic components such as a resist, an antireflection film, a filling material, and a residue generated with dry etching and / or ashing are increased by increasing the amount of the organic solvent.
  • Contained residues can be removed more easily, and by combination of hydrogen fluoride with water and organic solvent, contains silicon bonded to OH (Si—OH bond) and silicon bonded to Z or H (Si—H bond) Residues containing inorganic components such as inorganic filling materials, antireflection films, and Si-containing residues generated by dry etching and / or ashing can be removed more easily.
  • the interlayer insulating film such as a silicon-containing film or a low-k film and the damaged layer of these films formed during dry etching and / or ashing are removed.
  • Minimizing the etching by the liquid even if organic and inorganic dry etching residues such as resists, antireflection films and embedding materials, and unnecessary substances such as Si-containing residues coexist, they are simultaneously removed, It is possible to more selectively remove the copper-altered layer containing copper oxides and damaged by copper oxide and / or dry etching and / or ashing with respect to copper.
  • the removal liquid of the present invention contains a monocarboxylic acid and water as main components.
  • a monocarboxylic acid a water-soluble monocarboxylic acid is more preferable. This is because if it is water-soluble, the removal solution of the present invention remaining on the object to be treated such as a wafer can be easily removed by rinsing with pure water after treatment with the removal solution of the present invention.
  • Preferred water-soluble monocarboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, monochrome oral acetic acid, dichloroacetic acid, trichlorodiacetic acid, monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, a-cyclobutyric acid, ⁇ — Acetic acid, such as formic acid, acetic acid, propionic acid, butyric acid, and trifluoroacetic acid, among which acetic butyric acid, ⁇ -clobutyric acid, lactic acid, glycolic acid, pyruvic acid, dalyoxalic acid, acrylic acid, methacrylic acid, etc. Is most preferred.
  • the monocarboxylic acid is O.lmass% -80 mass%, preferably 1-80 mass%, more preferably 2.5-60 mass%, in the removing solution of the present invention comprising water and monocarboxylic acid. Water remains Amount. If the water and carboxylic acid are within the above range, the residue of the copper-modified layer containing the copper oxide of the Cu / low-k multilayer wiring structure can be removed quickly, but if it is outside the above range, The removal rate of the residue is rapidly reduced. The removal rate decreases if the amount of monocarboxylic acid is too much or too little.
  • Pure water is preferably used as the water.
  • a fluorine compound, an organic solvent, a monocarboxylate and an organic base may be used alone or in combination of two or more thereof.
  • the fluorine compound ammonium fluoride, hydrogen fluoride, and ammonium monohydrogen difluoride are preferable.
  • an aqueous ammonium fluoride solution and dilute hydrofluoric acid 50 mass% aqueous solution
  • concentration of the fluorine compound varies depending on the type and amount of interlayer insulating films such as silicon-containing films and low-k films, and interlayer insulating films damaged by dry etching and / or ashing.
  • the preferred compounding amount of the fluorine compound is 0.005 to 5.5 parts by mass, more preferably 0.01 to 3 parts by mass with respect to 100 parts by mass of the removal liquid of the present invention which also has water and monocarboxylic acid power.
  • the pH is 7 or less and it is as acidic as possible.
  • acidity becomes weaker NH increases than NH + NH + H + coconut, and it becomes easier to corrode copper by forming a complex with copper.
  • the organic solvent of the present invention is preferably an organic solvent that can be dissolved in an aqueous monocarboxylic acid solution.
  • organic solvent that can be dissolved in the monocarboxylic acid aqueous solution include ethers, esters, alcohols, amides, and sulfoxides.
  • Examples of the alcohol include methanol, ethanol, isopropyl alcohol, t-butanol, and fluorine-containing alcohol.
  • ethers include ethylene glycol monoethyl ether, diethylene glycol monomethylol ether, triethylene glycol monomono methyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutinore etherol, diethylene glycol monoisobutyl ether, Alkylene glycol monoalkyl or aralkyl ethers such as tripropylene glycol monomethyl ether and diethylene glycol monobenzyl ether; dioxane, trioxane, diglyme, 1,2-dimethoxyethane, tetra Hydrofuran, jetyl ether, dimethoxymethane, dimethoxypronone, diethoxymethane, 1,1-dimethoxyethane, ethyleneglycololemethinoreethinoatenore, ethyleneglycololegetinoreethenore, diethyleneglycolenoresinetinoreno Tenole, diethylene glycol
  • esters include monocarboxylic acid alkyl esters such as methyl acetate, ethyl acetate, and butyl acetate, carbonates such as propylene carbonate, ethylene carbonate, jetyl carbonate, dimethyl carbonate, and ethyl methyl carbonate, ethylene sulfite, Examples thereof include ⁇ -butyrolatatone, tryptyl phosphate, and trimethyl phosphate.
  • amides include dimethylformamide (DMF), dimethylacetamide, hexamethylphosphoric triamide, ⁇ -methyl-2-pyrrolidone, 1,1,3,3-tetramethylurea, ⁇ -methylpropionamide and dimethyl.
  • DMF dimethylformamide
  • Examples of amides include imidazolidinone.
  • Examples of the sulfoxide include dimethyl sulfoxide (DMSO).
  • sulfur compounds such as sulfolane, dimethylthioformamide, ⁇ -methylthiopyrrolidone, and methanesulfonic acid can be preferably used.
  • organic solvents that are soluble in an aqueous monocarboxylic acid solution are methyl acetate, ethyl acetate, butyl acetate, propylene carbonate, ethylene carbonate, jetyl carbonate, dimethyl carbonate, ethyl methyl carbonate, ethylene sulfite, ⁇ -butyrolatatane, esters such as tributyl phosphate and trimethyl phosphate, dioxane, trioxane, 1,1-dimethoxyethane, 1,2-dimethoxyethane, tetrahydrofuran, dimethoxymethane, dimethoxypropane, diethoxymethane, diglyme, Ethers such as diethylene glycol jetyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether and polyethylene glycol dimethyl ether, acetone, dimethylform Amides, dimethylacetamide, dimethyl sulfate, ethylene s
  • diethylene glycol-monomonomethylol ether triethyleneglycol-monomonomethylol ether, polyethylene-glycol-monomonomethylol ether, diethylene Glycolol monobutinoyl ether, triethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, tripropylene glycol monomono methino ether, diethylene glycol monohexyl ether, diethylene glycol monobenzil ether, diethylene glycol High flash point organic solvents such as ethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether and polyethylene glycol dimethyl ether It is desirable to use.
  • Sulfur-containing compounds having oxygen and Z having unshared electrons and nitrogen having unshared electrons and having unshared electrons include sulfids, mercabtans, thiocarboxylic acids, thioacetamides, thioureas, and thiadiazoles. , Tetrazoles, triazines, thiazoles, thiophenes, pyrimidines, purines, thiazolines, and thiazolidines can also be exemplified, and the following compounds are preferred. In the column.
  • Examples of sulfides include thiodiglycol, 2,2'-thiodiacetic acid, and 3,3'-dithiodipropionic acid;
  • Mercaptans include mercaptoacetic acid, thiomalic acid, thiolactic acid, 3-mercapto Examples include lopionic acid, aminothiophenol, 2-mercaptoethanol, 3-mercapto-1,2-propandiol;
  • Thiocarboxylic acids include thiol acetic acid, 3-acetylethyl 2-methylpropanoic acid;
  • Thioacetamides include thioacetamide
  • Thioureas include thiourea, thiocarbohydrazide, guarthiourea, ethilentiourea, malolthiourea;
  • the thiadiazoles include 2,5-dimercapto-1,3,4-thiadiazole, 2-thioacetic acid-5-mercapto-1,3,4-thiadiazole, 2,5-dithioacetic acid-1,3,4-thiadiazole Can be mentioned;
  • Examples of tetrazoles include 1-methyl-5-mercapto-1H-tetrazole; examples of triazines include 2, 4, 6 trimercapto 1 S-triazine; examples of thiazoles include 4 thiazole carboxylic acid, 2 -Aminothiazole;
  • Thiazolidines include 2,4-thiazolidinedione, 2-thio-4-thiazolidone, 2-imino-
  • thiophenes examples include 2,5-thiophenedicarboxylic acid, 3-thiophenmalonic acid, and 2-thiophenecarboxylic acid.
  • Pyrimidines include 2 thiobarbituric acid, 2 thiocytosine, thiouracil, and 4 amino.
  • Examples of the purines include 2,5-dithiopurine and 6-mercaptopurine.
  • thiazolines examples include 2 amino-2 thiazoline and 2 thiazoline-2 thiol.
  • the interlayer insulating film is a low-k film, and includes, for example, a silicon oxide film (FSG film) containing fluorine, and the relative dielectric constant is larger than 1. It means an insulating film of about 4 or less, preferably about 3 or less, more preferably about 2.8 or less, and even more preferably about 2.6 or less.
  • FSG film silicon oxide film
  • low-k films examples include Black Diamond (trade name, manufactured by Applied Materials), Coral (trade name, manufactured by Novellus), LKD series (trade name, manufactured by JSR), Aurora (trade name, manufactured by ASM), HSG series (trade name, manufactured by Hitachi Chemical), Nanoglass (trade name, manufactured by Honeywell), IPS (trade name, manufactured by Catalytic Chemical), ZM (trade name, Dow Corning)
  • XLK (trade name, manufactured by Dow Corning)
  • FOx (trade name, manufactured by Dow Corning)
  • Orion trade name, manufactured by Tricon
  • NCS trade name, manufactured by Catalyst Kasei
  • SiLK (trade name) , Manufactured by Dow Corning).
  • the composition of the low-k film is, for example, a low dielectric constant film (Low-k film, including silicon bonded to OH (Si—OH bond) and silicon bonded to Z or H (Si—H bond)). And a silicon (Si) -containing compound such as SiOC, SiOC: H, etc. It may be composed mainly of polyallyl ether.
  • the low-k film is mainly generated by coating and organic plasma CVD.
  • coating the name of the film specific to the raw material is given, and in the case of organic plasma CVD, the name of the specific film is given depending on the raw material and equipment.
  • the silicon-containing film is a TEOS silicon oxide film formed by using tetraethoxysilane [TEO S: Si (OC H)] formed by oxidizing a silicon wafer, high density plasma (High Density
  • HDP silicon oxide film formed by Plasma mainly silanol [(OR) R Si (OH)] dissolved in mn 4-mn agent, spin-coated on the wafer and thermally cured to form SOG (Spin on glass), silicon oxide film, silicon nitride (SiN), silicon carbide (SiC), SiCN, etc.
  • SOG Spin on glass
  • SiN silicon nitride
  • SiC silicon carbide
  • SiCN SiCN
  • An insulating film barrier refers to a film formed at an interface between an interlayer insulating film and an interlayer insulating film, an interface between copper and an interlayer insulating film, or the like.
  • the resist includes KrF (Krypton F), ArF, F resist, etc.
  • the antireflection film and the embedding material include those containing an organic substance as a main component and those containing an inorganic substance such as silicon.
  • Antireflective coatings and fillers containing inorganic substances such as silicon indicate silicon, S-to-OH bonds and / or SH "[bonds, etc., and those damaged by plasma-ashing also fall under this category.
  • Antireflective coatings and implants containing H bonds are films with little or few Si-H bonds and many Si-H bonds.
  • Si-H absorption spectrum (2200-2300cm-) with significant Si-H absorption data as FT-IR measurement data, generally called HSQ (Hydrogen Silsesquioxane) Including.
  • HSQ Hydrophilicity Quadrature Si-OH bonds
  • films containing Si-H bonds especially those with little or no Si-CH bonds
  • the film having more Si—H bonds and / or Si—OH bonds can be effectively removed by the removing solution of the present invention. In the present invention, these can be effectively removed. Even when the antireflection film and the embedding material are mainly composed of an organic substance, the number of acceptors such as methanesulfonic acid is high and can be removed by using a solvent.
  • the etching residue generated in the dry etching process may include silicon nitride used for an insulating film barrier or the like.
  • silicon nitride used for an insulating film barrier or the like.
  • a gas containing nitrogen atoms or a mixed gas containing nitrogen and nitrogen is used by dry etching and / or atsin, nonvolatile silicon nitride containing silicon (Si—N) bonded to nitrogen is generated.
  • Such etching residues are also easily removed by the removing liquid of the present invention.
  • the preferred removal solution in the present invention is The following can be illustrated.
  • the fluorine compound, organic solvent, monocarboxylate or organic base which can be blended as necessary, is composed of monocarboxylic acid and water. 0 to 1 part by mass (fluorine compound); 0 to 25 parts by mass (organic solvent); 0 to 25 parts by mass (monocarboxylate or organic base) can be used.
  • Acetic acid and Z or trifluoroacetic acid water: tetramethylhydroxyammonium
  • Acetic acid and Z or trifluoroacetic acid water: dimethylformamide
  • the removal liquid include the following.
  • the fluorine compound, organic solvent, monocarboxylate or organic base is 100 parts by mass of the total amount of monocarboxylic acid and water. 0.005 to 5.5 parts by mass (fluorine compound); 0 to 25 parts by mass (organic solvent); 0 to 25 parts by mass (monocarboxylate or organic base) can be used.
  • the object to be removed is a copper oxide film and / or a copper-modified layer containing copper oxide and an inorganic embedded material residue damaged by dry etching and / or ashing
  • Preferred examples of the removing liquid include the following.
  • the fluorine compound, organic solvent, monocarboxylate or organic base is 100 parts by mass of the total amount of monocarboxylic acid and water.
  • 0.5 to 5.5 parts by mass (fluorine compound); 0 to 25 parts by mass (organic solvent); 0 to 25 parts by mass (monocarboxylate or organic base) can be used.
  • Hydrogen fluoride and Z or ammonium fluoride acetic acid and Z or trifluoroacetic acid: water
  • the removal target is a copper oxide film and / or a copper altered layer containing copper oxide damaged by dry etching and / or ashing, a resist residue, a BARC residue, and an organic filling material residue.
  • examples of the preferred removal liquid in the present invention include the following.
  • Acetic acid and Z or trifluoroacetic acid water: tetramethylhydroxyammonium
  • organic solvents that are constituents of the removal liquid may have an anticorrosive effect against copper.
  • water-soluble alcohols with 3 or more carbon atoms such as isopropyl alcohol and tert-butanol, acetic acid, formic acid, trifluoroacetic acid, methyl acetate, ethyl acetate, propylene carbonate, etc., which contain a carboxyl group (COOH) in the molecule
  • COOH carboxyl group
  • polycarboxylic acids such as oxalic acid, malonic acid, succinic acid, dartaric acid, adipic acid, malic acid, citrate and tartaric acid can be added to monocarboxylic acid to synergistically inhibit copper corrosion. can do.
  • anticorrosive is not limited, but for example, phenol, talesol, xylenol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, 1, 2, 4 benzenetriol, salicyl alcohol, p-hydroxybenzyl alcohol, o-hydroxybenzyl alcohol, p-hydroxyl Phenethyl alcohol, p-aminophenol, m-aminophenol, diaminophenol, aminoresorcinol, p-hydroxybenzoic acid, o-hydroxybenzoic acid, 2,4-dihydroxybenzoic acid, 2,5-dihydroxybenzoic acid, 3 , 4-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, aromatic hydroxy compounds such as these derivatives, benzotriazole, o trilltriazole, m tolyltriazole, p-toly
  • the concentration of the anticorrosive agent in the removal liquid in the present invention is not limited as long as the anticorrosive effect is obtained, but for example, about 0.1 to 20 mass%, preferably 0 with respect to the total amount of water and monocarboxylic acid. About 5 to 10 mass%.
  • An inert gas may be further dissolved in the removal liquid of the present invention.
  • the inert gas include nitrogen, helium, argon, neon, krypton, and xenon.
  • the method for dissolving the inert gas in the removal liquid is not limited, and can be performed by a generally used method.
  • an inert gas may be blown into the removal liquid.
  • the dissolved amount of the inert gas is not limited as long as the partial pressure of oxygen in the removal liquid can be reduced (for example, lower than the partial pressure of oxygen in saturated dissolved air). As a result of the reduction of the oxygen partial pressure in the removal liquid, it is possible to prevent copper oxide from which the copper oxide has been removed and copper corrosion.
  • the inert gas is not necessarily limited to these, and may be substantially inert to the removal liquid.
  • a gas that does not react with the removal liquid such as fluorocarbon gas, hydrocarbon, and carbon monoxide, can achieve the same effect of removing dissolved oxygen.
  • Oxidation and oxidation include oxidation 3 ⁇ 4 ⁇
  • the method of the present invention is used when forming a structure such as a damascene or dual damascene in a Cu / Low-k multilayer wiring structure and when using a copper film in a capacitor structure.
  • the removal solution of the present invention suppresses etching by the removal solution of the silicon-containing film or the low-k film, does not corrode copper, and forms a copper thin film such as a copper wiring, an electrode, a copper layer, etc. Copper oxide formed on the copper surface And / or a copper-altered layer containing a copper oxide that has been damaged by dry etching and / or ashing can be suitably used to selectively remove copper.
  • a low-k film is formed on a semiconductor substrate (for example, SiN, copper, TaN, SiC, etc.), and an antireflection film is formed. Then, a resist is formed, and then a pattern is formed by photolithography. After etching and ashing the low-k film according to the pattern, contact with the removing solution of the present invention is performed, and then copper oxide and / or etching and It is possible to remove a copper alteration layer containing copper oxide damaged by ashing.
  • a semiconductor substrate for example, SiN, copper, TaN, SiC, etc.
  • the removal liquid of the present invention has a hole or groove in the low-k film, the antireflection film, and the resist, and the resist (including altered resist material), the antireflection film, the embedding material, etc. are removed by ashing or the like.
  • This is a liquid that removes the copper-modified layer containing copper oxide, which has been damaged by dry etching and / or ashing, as the object to be treated in the removed state.
  • the polymer (etching gas polymer) and / or the residue after dry etching and / or ashing may adhere to the wall surface and Z or bottom surface of the hole of the low-k film obtained by dry etching. Yo ⁇ .
  • an insulating film barrier such as SiN, SiC, TaN film is formed on the low-k film, and the SiN, SiC, TaN film, etc. It is also possible to etch with the k film.
  • an antireflection film can be formed on the surface of the resist or between the resist and the insulating film barrier. Residues after dry etching and / or ashing of these antireflection films are copper oxide, and It can also be removed with an altered copper layer containing copper oxide that has been damaged by etching and / or ashing.
  • the low-k film and the resist usually have thicknesses of about 0.01 to 2 ⁇ m, about 0.001 to 0.2 ⁇ , and about 0.01 to 10 / ⁇ ⁇ , respectively. .
  • SiN film, SiC film, TaN film, antireflection film, etc. formed as necessary are usually about 0.01-2m, 0.001-0.2 ⁇ &, 0.01-10, respectively. / ⁇ ⁇ , 0.01 to 0 .: Thickness of about L m.
  • a large amount of oxygen radicals are removed in order to remove unnecessary materials such as resist, antireflection film, filling material and etching residue.
  • the low-k film is damaged. I will give it.
  • Oxygen radicals were reduced to such an extent that hydrogen plasma ashing, ashing using an inert gas such as He, and mixed gas plasma such as He / hydrogen, or oxygen-containing low-k films were not damaged.
  • the ashing may be performed with plasma. Even when ashing is performed, in order to reduce damage, a method called half ashing is used in which ashing is interrupted halfway and unnecessary materials such as resist, antireflection film, filling material and etching residue are not completely removed. Sometimes. When performing such plasma ashing, the optimum conditions such as temperature and time may differ from those when removing the resist directly without etching after etching even if the same removal solution is used. .
  • a method for removing a copper oxide layer using a removal solution of the present invention and / or a damaged copper layer including a copper oxide layer damaged by etching and / or ashing includes copper oxide, and / or Alternatively, it is possible to remove a copper-altered layer containing copper oxide that has been damaged by etching and / or ashing, and at a temperature and time that does not substantially damage a silicon-containing film or a low-k film. Is what you do.
  • the fact that the silicon-containing film and low-k film are not substantially damaged means that the physical properties of the silicon-containing film and low-k film before and after the treatment with the removal solution are used for semiconductor substrates, for example.
  • the silicon-containing film or low-k film is substantially affected (etched) at the interface between the resist and the silicon-containing film or low-k film.
  • the relative dielectric constant of the silicon-containing film or the low-k film is substantially unchanged before and after the treatment using the removal liquid. It means not changing.
  • the fact that the silicon-containing film or the low-k film is not substantially etched means that the etching amount of the silicon-containing film or the low-k film is preferably about 200 nm or less, more preferably about lOOnm or less, and further preferably about 50 nm or less. It means that.
  • the fact that the relative permittivity of the silicon-containing film and the low-k film before and after the treatment using the removal solution does not substantially change means that the change in the relative permittivity is preferably about 20% or less, more preferably 10%. % Or less, more preferably about 5% or less.
  • the treatment with the removing liquid can be performed, for example, by immersing the substrate after dry etching and / or ashing in the removing liquid of the present invention as a processing object.
  • the condition of immersion in the removal solution is that copper oxide and / or copper damaged layer containing copper oxides damaged by etching and / or ashing can be removed, copper corrosion is suppressed, and silicon is contained.
  • the film can be appropriately set according to the type and temperature of the removal solution.
  • the temperature of the removal liquid is, for example, about 10 to 60 ° C, preferably about 15 to 40 ° C.
  • the immersion time is not limited and can be appropriately selected. For example, about 0.5 to 60 minutes, preferably about 1 to 40 minutes can be exemplified.
  • the speed of stirring is not limited and can be appropriately selected.
  • the removal solution is brought into contact with the object to be treated, the copper oxide and / or the copper altered layer containing the cuprate oxide damaged by etching and / or ashing is removed.
  • the workpiece it is possible to clean the workpiece by supplying it with a rotating liquid while rotating it, and cleaning it by spraying the composition with the spray! /.
  • the treatment with the removing liquid of the present invention may be carried out by subjecting the resist, the antireflection film, and the filling material to the conditions such as etching and / or ashing, copper oxide such as etching and / or ashing residue, and / or If unnecessary materials that have been damaged by etching and / or ashing and that are an obstacle to the removal of the copper-modified layer containing copper oxide are difficult to peel off, ultrasonic cleaning is performed by, for example, immersing the object to be processed in a removal solution. You may go.
  • the method for removing a copper oxide of the present invention can be further performed by washing the wafer from which the cuprate is removed with pure water.
  • the removal liquid of the present invention can be washed away by this washing step. It is more preferable to use a process of cleaning with pure water in which an inert gas is dissolved instead of the process of simply cleaning with pure water.
  • the water reduces the oxygen partial pressure by dissolving the inert gas, it can effectively prevent the copper oxide and copper corrosion from which the copper oxide is removed. .
  • Dissolution of the inert gas in water can be performed in the same manner as in the case of dissolving the inert gas in the removal liquid.
  • a substantially inert gas atmosphere means a completely inert gas atmosphere. It may be in the air or in an atmosphere having an oxygen partial pressure lower than the oxygen partial pressure of air. It is preferable to remove the copper oxide under such conditions because the copper oxide from which the copper oxide has been removed and the corrosion of the copper can be more effectively prevented.
  • a semiconductor substrate in which a copper oxide layer and / or a damaged layer due to etching and / or ashing, which has been damaged by etching and / or ashing, has been removed using the removal solution of the present invention can be processed into various types of semiconductor devices in accordance with a commonly used method (for example, a method described in the detailed semiconductor CMP technology, edited by Toshiro Doi 2001), such as copper wiring.
  • the removal of the copper-altered layer containing porcelain and the corrosion of the copper were investigated using a film-formed wafer obtained by cutting a formed 8-inch wafer into a certain size.
  • the film thickness of copper oxide Cu 0 was measured by X-ray interferometry and confirmed to be about 33A.
  • 33A The film thickness of copper oxide Cu 0 was measured by X-ray interferometry and confirmed to be about 33A.
  • Cu oxides (CuO, Cu 0, Cu (OH), etc .; hereinafter referred to as “Cu 0”.
  • a wafer for measuring the amount of copper erosion was washed with a 0.1N aqueous solution of H 2 SO before use.
  • a wafer with a test pattern was produced as follows. Si substrate with porous low-k film (porous MSQ), insulating film barrier SiN film, silicon-containing antireflection film (BARC), and resist film formed by via etching and He / H plasma ashing Processing
  • porous low-k film porous MSQ
  • insulating film barrier SiN film silicon-containing antireflection film (BARC)
  • resist film formed by via etching and He / H plasma ashing Processing
  • the embedding material, porous low-k film used the following:
  • Embedding material Inorganic embedding containing Si, C, 0, H and having Si-OH, Si-CH, SHD bonds
  • Porous low-k film coating film containing Si, C, 0, H and having S-to-CH, S-to-O bond;
  • the experiment was performed by immersing a film-formed wafer or a patterned wafer in the removing solution of the present invention at 23 ° C. for 1 to 20 minutes with stirring (600 rpm). Thereafter, pure water was overflowed into a container filled with 1 liter of pure water at 2 liter / min, rinsed in the container for 1 to 5 minutes, and dried by N purge. Film thickness of the film-forming wafer before and after being immersed in the remover
  • the thickness difference (A) force was also determined for the porous low-k film etching amount and copper erosion amount.
  • the etching rate of porous low-k film is expressed as "A” when it is less than l A / min, "B” when it is l-5A / min, and “C” when it is 5A / min or more.
  • the corrosion rate of copper is expressed as “A” when the rate is 3 A / min or less, 3 to: “B” when LOA / min, or “C” when 10 A / min or more.
  • the removal time of the copper oxide film (CuxO) is 10 seconds or less, it is expressed as “A”, when it is 10-30 seconds, it is expressed as “B”, and when it is longer than 30 seconds, it is expressed as “C”.
  • Removal time of copper alteration layer containing copper oxides (labeled as “altered layer”) Force “A” for 60 seconds or less, “B” for 60 to 120 seconds, “180” for 180 seconds or more C ".
  • Table 6 and Table 7 show comparative examples.
  • Non-removable objects are the porous low-k film, the damaged layer of the porous low-k film, and copper.
  • the degree of etching of the porous low-k film can be determined from the cross-sectional shape of the wafer with the test pattern.
  • removal targets include resist residues, antireflection coating (BARC) residues, organic embedding material residues, inorganic embedding material residues, Si-containing residues, copper oxides on copper surfaces, and altered layer residues containing these (“copper surface residues "). The extent of these removals is indicated by the following symbols.
  • the damaged layer When the damaged layer is removed, the amount of force is rather strong, but since the machining dimension becomes larger than the design dimension, this is often not removed.
  • the cross-sectional shape of the side wall of the processed pattern in the dry etching becomes clearly visible, so that it is possible to determine the force / force of removing the damaged layer.
  • the case where the damaged layer is not removed is represented by “A”
  • the case where about half of the layer is removed is represented by “B”
  • the case where the damaged layer is completely removed is represented by “C”.
  • Etching residue (“resist residue”, “antireflection coating (BARC) residue” ”,“ Organic embedding material ”, and“ Inorganic embedding material residue ”) are removed within 3 minutes,“ A ”, when removed within 5 minutes,“ B ”, within 5 minutes If it can be removed, it is indicated by "C”.
  • the copper surface residue mainly exists at the bottom of the via hole, and the Si-containing residue often remains mainly on the side wall of the via hole. If these can be removed, “A”, and if not, “C” 3 ⁇ 4k.
  • any copper surface residue can be removed and the damage layer remains, and there is no problem in the cross-sectional shape.
  • Examples 33 to 37 since they contain a lot of acetic acid and organic solvent, the wafers with test patterns including “resist residue”, “antireflection coating (BARC) residue”, and “organic filling material” were removed. It is also possible to do this. As shown in Examples 32 and 33, when the amount of acetic acid is small, the removal time can be shortened by mixing a highly polar organic solvent.
  • Examples 38 to 47 show the results when a wafer with a test pattern containing a Si-containing residue was processed. By adding hydrogen fluoride (HF) as a fluoride, even if they coexist, these and the copper surface residue can be effectively removed.
  • Examples 49 to 53 are results when a wafer with a test pattern was processed with a residue of an inorganic embedding material remaining. A sufficient amount of acetic acid and hydrogen fluoride can be used to remove copper surface residues in the presence of these residues.
  • HF hydrogen fluoride
  • a wafer with a non-turn formed may have copper wiring portions that are very susceptible to corrosion, such as grains formed during the plating process, damage layers caused by dry etching or ashing. In such a part, a small part of the surface may corrode into cracks or pits by chemical treatment.
  • Oxygen with unshared electrons Sulfur-containing compounds with unshared electrons and nitrogen with z or unshared electrons have the effect of preventing such undue corrosion (Tables 5 and 7). When the sulfur-containing compound contains a carboxyl group, it also has the effect of removing copper surface residues.

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Abstract

La présente invention décrit une solution composée d’un acide monocarboxylique et d'eau, qui est destinée à l'élimination des résidus d’une couche de cuivre détériorée, endommagée suite à gravure à sec et/ou cendrage à sec, et incluant de l’oxyde de cuivre.
PCT/JP2005/016652 2004-09-15 2005-09-09 Solution destinée à l’élimination d'une couche de cuivre détériorée incluant de l'oxyde de cuivre, et méthode d'utilisation de ladite solution WO2006030714A1 (fr)

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US8759268B2 (en) 2006-08-24 2014-06-24 Daikin Industries, Ltd. Solution for removing residue after semiconductor dry process and method of removing the residue using the same
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