WO2006028299A1 - 反強磁性ハーフメタリック半導体及びその製造方法 - Google Patents
反強磁性ハーフメタリック半導体及びその製造方法 Download PDFInfo
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- WO2006028299A1 WO2006028299A1 PCT/JP2005/017100 JP2005017100W WO2006028299A1 WO 2006028299 A1 WO2006028299 A1 WO 2006028299A1 JP 2005017100 W JP2005017100 W JP 2005017100W WO 2006028299 A1 WO2006028299 A1 WO 2006028299A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title description 25
- 230000005291 magnetic effect Effects 0.000 claims abstract description 107
- 229910052720 vanadium Inorganic materials 0.000 claims description 78
- 230000005294 ferromagnetic effect Effects 0.000 claims description 35
- 229910052748 manganese Inorganic materials 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 30
- 229910052804 chromium Inorganic materials 0.000 claims description 29
- 229910052742 iron Inorganic materials 0.000 claims description 27
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 229910052950 sphalerite Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 description 37
- 230000005328 spin glass Effects 0.000 description 36
- 230000005303 antiferromagnetism Effects 0.000 description 35
- 238000004364 calculation method Methods 0.000 description 29
- 229910052799 carbon Inorganic materials 0.000 description 26
- 229910052723 transition metal Inorganic materials 0.000 description 17
- 230000007704 transition Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 238000001451 molecular beam epitaxy Methods 0.000 description 13
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- 230000003993 interaction Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 238000004599 local-density approximation Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 230000005308 ferrimagnetism Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000005298 paramagnetic effect Effects 0.000 description 2
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 101100194706 Mus musculus Arhgap32 gene Proteins 0.000 description 1
- 102000035195 Peptidases Human genes 0.000 description 1
- 108091005804 Peptidases Proteins 0.000 description 1
- 241000219977 Vigna Species 0.000 description 1
- 235000010726 Vigna sinensis Nutrition 0.000 description 1
- 101100194707 Xenopus laevis arhgap32 gene Proteins 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- NPUACKRELIJTFM-UHFFFAOYSA-N cr gas Chemical compound C1=NC2=CC=CC=C2OC2=CC=CC=C21 NPUACKRELIJTFM-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 235000019833 protease Nutrition 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000004613 tight binding model Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/402—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of II-VI type, e.g. Zn1-x Crx Se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/408—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 half-metallic, i.e. having only one electronic spin direction at the Fermi level, e.g. CrO2, Heusler alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Definitions
- the present invention has antiferromagnetism and exhibits properties as a metal in one of the upward electron spin state and the downward electron spin state, whereas the insulator or semiconductor in the other electron spin state.
- the present invention relates to a half-matrix antiferromagnetic half-matrix semiconductor exhibiting the following properties and a method for manufacturing the same. Background art
- a half-metallic magnetic body having ferromagnetism (hereinafter referred to as a half-metallic ferromagnetic body), a Heusler alloy, a velovite type manganese oxide, a zinc blende type CrAs, a dilute magnetic semiconductor, and the like are known.
- a Heusler alloy As a Heusler alloy, a velovite type manganese oxide, a zinc blende type CrAs, a dilute magnetic semiconductor, and the like are known.
- spintronic materials As a diluted magnetic semiconductor, for example, (I n, Mn) As (Ga, M n) As is known.
- half-medium antiferromagnets anti-ferromagnetic half-medium ferromagnets
- Dr. Groot et al. In 1995 (H. van Leuken). . and de Groot, Phys Rev. Lett.74 (1995) 1171), then, La 2 VC U_ ⁇ 6 and L AzMnVO with double Beloff sky preparative structure from the electronic state calculation by Pikedzu Bok; ⁇ ; proposed (W Picket, Phys. Rev. Lett. 77 (1996) 318 5).
- the half-matrix antiferromagnet proposed by Pickett is an intermetallic compound based on a transition metal oxide and not a semiconductor based spintronic material.
- Half-metallic as a spintronic material For antiferromagnets, there are no proposed or manufactured facts.
- an object of the present invention is to provide an antiferromagnetic half-metallic semiconductor, which is a novel spintronic material having antiferromagnetism and half-metallic, and a method for producing the same. Disclosure of the invention
- the antiferromagnetic half-metallic semiconductor according to the present invention comprises adding two or more kinds of magnetic elements including a magnetic element having a d-electron number of less than 5 and a d-electron number of more than 5 to the semiconductor, It is produced by substituting some elements with the two or more kinds of magnetic elements.
- the two kinds of magnetic elements are Ti and Ni, V and Co, Cr and Fe, Ti and Fe, Ti and Co, V and Fe, V and Ni, Cr and Co, Cr And Ni, Fe and Co, Mn and Fe, Mn and Co, V and Mn, and Cr and Mn.
- the number of d electrons in Mn is less than 5 or more than 5 depending on the base semiconductor and the magnetic element to be combined.
- antiferromagnetism and half-metallic properties are manifested by adding two or more kinds of magnetic elements, including a magnetic element having a d-electron number of less than 5 and a d-electron number of more than 5 to a semiconductor.
- the two kinds of magnetic elements are V and Co. ⁇
- FIG. 22 and 23 show the state density curves of V and C 0 when V and Co align magnetic moments in parallel, and the state density curves after V and C 0 are combined, respectively.
- Figures 24 and 25 show the state density curves of V and C 0 when V and Co align the magnetic moments antiparallel, and the state density curves after V and C 0 are combined. Yes.
- the vertical axis in the figure represents the magnitude of energy.
- the left curve represents the density of states of spin electrons upward, and the curve on the right represents the density of states of spin electrons downward.
- the hatched area in the figure indicates that electrons are contained in the d orbit.
- V and Co align magnetic moments in parallel
- the upward and downward spin electrons of V and C 0 are respectively between V and Co, as shown by the thin arrows in Fig. 22.
- V and C 0 are coupled by moving between two states having an energy difference according to the number of electrons, and the density of states of the upward spin electrons and the downward spin electrons after the coupling is represented by the curve shown in FIG.
- the energy of electrons decreases slightly as a whole.
- the ferromagnetic coupling in which V and Co are coupled with their magnetic moments aligned in parallel is thought to be stable due to a decrease in electron energy due to superexchange interaction.
- antiferromagnetism As described above, the two types of magnetic elements, when the number of d electrons in one magnetic element is the same as the number of holes in the other magnetic element, antiferromagnetism appears as described above. d If the number of electrons and the number of holes in the other magnetic element are not exactly the same, but are almost the same, the two types of magnetic elements have slightly different magnetic momentum sizes, so the whole is slightly magnetic. It is considered that ferrimagnetism having the above will be developed. In the present specification, “antiferromagnetism” includes “ferrimagnetism” having slight magnetism.
- the total number of d electrons each of the two types of magnetic elements has and one type of magnetic element other than the two types of magnetic elements.
- the number of holes is the same or substantially the same.
- the three types The magnetic elements of T i and V and Ni, Ti and V and Co, Ti and Ni and Co, V and Ni and Co, Cr and Mn and Co, and V, Mn and Fe Or one combination.
- two types of magnetic elements are ferromagnetically coupled with their magnetic moments aligned in parallel with each other, and the two types of magnetic elements and one other type of magnetic element. Elements are antiferromagnetically coupled to each other with their magnetic moments aligned antiparallel.
- the two types of magnetic elements are As with the first specific composition to be added, antiferromagnetism appears.
- T i and V are ferromagnetically coupled, while T i and V and N i are antiferromagnetically coupled, and T i and In the case of V and Co, T i and V are ferromagnetically coupled, while T i and V and Co are antiferromagnetically coupled.
- Ti Ni and Co
- Ni and Co are ferromagnetically coupled
- T i and Ni and C 0 are antiferromagnetically coupled
- V, Ni and C 0 In some cases, Ni and Co are ferromagnetically coupled, while V, Ni and Co are antiferromagnetically coupled.
- Figure 1 is a formula ( ⁇ 0. 9 ( ⁇ 0 .. 5 ⁇ 6 .. ⁇ 5) semiconductor antiferromagnetic shape represented by 3 It is a graph showing the electronic state density in a state.
- FIG. 2 is a graph showing the density of electronic states in the ferromagnetic state of the semiconductor.
- FIG. 3 is a graph showing the density of electronic states in the spin glass state of the semiconductor.
- FIG. 4 is a graph showing the relationship between the Cr and Fe concentrations and the antiferromagnetic transition temperature.
- Figure 5 is a graph illustrating an electron state density in an antiferromagnetic state of semiconductors formula (211 0. 9 0. 05 (0. 05) 3 Table pictmap.
- FIG. 6 is a graph showing the density of electronic states in the ferromagnetic state of the semiconductor.
- FIG. 7 is a graph showing the electronic state density in the spin glass state of the semiconductor.
- Figure 8 is a graph illustrating an electron state density in an antiferromagnetic state of semiconductors Table pictmap 0 formula ( ⁇ 11 .. 9 (1 ⁇ . 05 Rei_0 0. () 5).
- FIG. 9 is a graph showing the density of electronic states in the spin glass state of the semiconductor.
- Figure 10 is a formula 11 0.9. 1 0. 05 ? 6. 05 ) is a graph showing the density of electronic states in the antiferromagnetic state of the semiconductor expressed by 36).
- Fig. 11 is a graph showing the electronic state density in the spin glass state of the semiconductor.
- Figure 12 is a graph illustrating an electron state density in an antiferromagnetic state of a semiconductor represented by the composition formula (Zn 0. 9 Cr 0. 05 F e .. 05) O.
- Figure 13 is a graph illustrating an electron state density in an antiferromagnetic state of the semiconductor represented by a composition formula Cu (A 1 ⁇ 0. 9 ⁇ 0. 05 ⁇ .. 05) 3 2.
- FIG. 14 is a graph showing the density of electronic states in the ferromagnetic state of the semiconductor.
- FIG. 15 is a graph showing the density of electronic states in the spin glass state of the semiconductor.
- Figure 16 is a compositional formula (Z n 0. 9 C r 0. 05 Mn 0. 025 C 0 0. 025) semiconductor represented by S It is a graph showing the electronic state density in the antiferromagnetic state of a body.
- FIG. 17 is a graph showing the density of electronic states in the ferromagnetic state of the semiconductor.
- FIG. 18 is a graph showing the density of electronic states of the semiconductor in the spin glass state.
- Figure 19 is a graph illustrating an electron state density in an antiferromagnetic states of semiconductor represented by the composition formula (T i .. 9 Mn 0. 05 Co Q. 05) 0 2.
- Figure 20 is a graph illustrating an electron state density in an antiferromagnetic states of semiconductor represented by the composition formula (T i .. 9 F e 0 . 05 C o .. 05) O 2.
- FIG. 21 is a graph showing the electronic density of states in the antiferromagnetic state of a semiconductor represented by the composition formula (Ti .. 9 Cr .. 05 Co .. 05 ) O 2 .
- Figure 22 shows the state density curves for V and Co when V and C 0 are aligned in parallel.
- FIG. 23 shows a state density curve after V and Co are combined in the above case.
- FIG. 24 shows a state density curve of V and C 0 when V and C 0 align magnetic moments antiparallel.
- FIG. 25 shows a state density curve after V and Co are combined in the above case.
- the antiferromagnetic half-medium semiconductor according to the present invention includes two or more types of magnetic elements in which a part of the semiconductor includes a magnetic element having a d-electron number of less than 5 and a magnetic element having a d-electron number of more than 5. It has been replaced with an element.
- An antiferromagnetic half-medium semiconductor according to the present invention includes a magnetic element having a d-electron number of less than 5 and a d-electron number of more than 5 at the same time as a base semiconductor thin film is grown on a substrate. It is produced by adding several percent of two or more kinds of magnetic elements.
- semiconductors that can be used as the base are II-1 VI group compound semiconductors, III-1 V group compound semiconductors, etc. Conductors, I-III-VI group compound semiconductors with chalcopyrite type crystal structures, II-VI-V group compound semiconductors with chalcopyrite type crystal structures, oxide semiconductors, etc. are used.
- ZnO, ZnSe, Zn S, ZnTe, CdTe can be used as the group VI compound semiconductor.
- GaAs, GaN, InAs, AlAs, InSb, GaSb, GaP can be used as the group III-V compound semiconductor.
- InP can be used.
- the Karukopairai preparative I- ⁇ - VI group compound semiconductor for example CuAlS 2, AgCaS 2, A g G a S 2 and the like are possible employed
- the Karukopairai preparative pi-VI- V group compound semiconductor for example, CdGeP 2 , ZnGeP 2 , CdGe As 2 or the like can be used.
- the oxide semiconductor for example, T i0 2 can be adopted.
- a well-known thin film growth method such as MBE (Molecular Beam Epitaxy) method, laser MBE method, low temperature MBE method, or MOCVD (Metal Organic Chemical Vapor Deposition) method can be adopted. is there. It is desirable to employ the low temperature MBE method when growing a V-group compound semiconductor as a semiconductor thin film on a substrate.
- MBE Molecular Beam Epitaxy
- laser MBE method laser MBE method
- low temperature MBE method low temperature MBE method
- MOCVD Metal Organic Chemical Vapor Deposition
- the magnetic element to be added is two kinds of transition metal elements, and the number of d electrons possessed by one magnetic element and the number of holes possessed by the other magnetic element are the same or substantially the same.
- Two types of transition metal elements are Ti and Ni, V and Co, Cr and Fe, Ti and Fe, Ti and Co, V and Fe, V and Ni, Cr and Co, Cr and Ni, Fe and One combination selected from the group consisting of Co, Mn and Fe, Mn and Co, V and Mn, and Cr and Mn. It is also possible to use three kinds of transition metal elements, such as T i and V and Ni, Ti and V and Co, Ti and Ni and Co, and V and Ni. One combination selected from the group consisting of Co, Cr and Mn and Co, and V, Mn and Fe.
- a part of the elements of the semiconductor thin film is replaced with two or more kinds of magnetic elements in the process of growing the semiconductor thin film, thereby having antiferromagnetism and half-medium.
- a simple antiferromagnetic half-metallic semiconductor is obtained.
- the group II element When a II-VI compound semiconductor thin film is grown as a semiconductor thin film, the group II element is replaced with a magnetic element. When a III-V compound semiconductor thin film is grown, the group III element is magnetic. Replaced with an element. In addition, when a chalcopyrite type I-VI-VI compound semiconductor thin film is grown, a group III element is replaced with a magnetic element, and a chalcopyrite type II-1 VI-V compound semiconductor is grown. In the group II element is replaced with a magnetic element.
- the concentration of the three kinds of transition metal elements is adjusted so that the number of holes of one kind of transition metal element is the same or substantially the same, thereby obtaining a semiconductor having antiferromagnetism.
- the total number of Cr and the number of Cr holes are the same, and it has antiferromagnetism.
- (Z n 0. 9 Cr .. 05 Mn .. 025 Co .. 025) S 5% of Cr to Z nS, d electrons of Mn and C o by adding Mn and Co by 2.5%
- the total number of Cr and the number of Cr holes are the same, and it has antiferromagnetism.
- (Z n 0. 9 Cr .. 05 Mn .. 025 Co .. 025) S 5% of Cr to Z
- the antiferromagnetic half-metallic semiconductor according to the present invention has antiferromagnetism that is not affected by an external magnetic field, it can be applied to a device different from a ferromagnetic spintronic material that is affected by an external magnetic field.
- MRAM Magnetic Random Access Memory
- sensors spin injection devices, magneto-optical devices, spin transistors, spin FETs, single spin superconductors, etc.
- the antiferromagnetic half-metallic semiconductor according to the present invention is half-metallic, When applied to a body switching element, a high switching speed can be obtained.
- composition formula (Z n 0. 9 C r 5 F e ... 5) is represented by S, II group element ZnS is II- VI group compound semiconductor Part of Zn is substituted with transition metal elements Cr and Fe.
- a ZnS thin film is grown on a GaAs (100) substrate by the laser MBE method, and at the same time, Cr gas and Fe gas are irradiated toward the substrate. Add 5% each of Cr and Fe.
- the substrate temperature is, for example 150 to 200 ° C
- Z beam pressure of n molecular beam for example 2.5x 1 0 one 5 ⁇ 8 X 10- 5 P a
- the beam pressure of S molecular beams for example 1.5 x 10- 4 ⁇ 12 x 10—Set to 4 Pa.
- the gas pressure of the C r and F e is set to, for example, 2.5 x 10 one 6 -15x 10 one 6 P a.
- the present inventor performed first-principles electronic state calculation in order to confirm that half-matrix and antiferromagnetism are manifested by the above-described manufacturing method.
- the first-principles electronic state calculation methods include KKR (Korringa-Kohn-Rostoker) method (also called Green function method), CPA (Coherent-Potential Approximation) method, The well-known KKR—CPA—LDA method combined with the LDA (Local Density Approximation) method was adopted.
- Figures 1 to 3 show the state density curves in the antiferromagnetic state, the ferromagnetic state, and the spin glass state in which the orientation of the local magnetic moment is irregular, obtained by first-principles electronic state calculations. Yes.
- the solid line in the figure represents the total density of states
- the alternate long and short dash line represents the local state density at the 3d orbital position of Cr
- the broken line represents the local state density at the 3d orbital position of Fe.
- FIG. 3 shows only the state density curve of the upward spin electrons in the spin glass state, and the state density curve of the downward spin electrons is the same as that of the upward spin electrons, and is not shown. .
- the antiferromagnetic state as indicated by the solid line in FIG.
- the density of states of the downward spin electrons becomes a neck and a bandgap Gp is formed, and Fermi energy exists in the bandgap.
- the density of states of upward spin electrons is larger than zero near Fermi energy. In this way, the state of the downward spin electrons represents the property as a semiconductor, while the state of the upward spin electrons represents the property as a metal, and it can be said that a half-medium is manifested.
- the density of states of the upward spin electrons is greater than zero near the Fermi energy.
- the density of states of the downward spin electrons is larger than zero near the Fermi energy, and it can be said that the half-measuring is not expressed.
- the antiferromagnetic state is the most stable and the antiferromagnetism appears.
- the antiferromagnetic transition temperature (Nehl temperature) for transition from the antiferromagnetic state to the paramagnetic state was calculated to be 445 K.
- the antiferromagnetic transition temperature is the energy of the spin glass state and the antiferromagnetic state, as in the known method of calculating the ferromagnetic transition temperature (Curie temperature) from the ferromagnetic state to the paramagnetic state.
- the mean field approximation was used to calculate the difference.
- the antiferromagnetic transition temperature at each concentration was calculated by changing the Cr and Fe concentrations.
- Figure 4 shows the calculation results of the antiferromagnetic transition temperature.
- the plot in the figure is the calculation of the antiferromagnetic transition temperature when X in the composition formula represented by (Zn, — x Cr x / 2 Fe x / 2 ) S is 0.02, 0.04, 0.06, 0.08, 0.10 Express the value The curve is the result of connecting these plots with an approximate curve.
- the diluted antiferromagnetic half-metallic semiconductor of this example has a high antiferromagnetic transition temperature (4 45 K) above room temperature, so it can be used for devices that operate at room temperature or above. I can do it.
- Diluted antiferromagnetic half-metallic semiconductor of this embodiment the composition formula (Z n 0. 9 V 0 .. 5 C o.. 0 5) is represented by S, a II- VI group compound semiconductor Z n S A part of the group II element Zn in this group is substituted with transition metal elements V and Co.
- a ZnS thin film is grown on a GaAs (100) substrate by the laser MBE method, and at the same time, 5% of V and Co are added. To do.
- the present inventor performed first-principles electronic state calculations in the same manner as in the first example in order to confirm that half-medium and antiferromagnetism are manifested by the manufacturing method described above.
- 5 to 7 show the state density curves in the antiferromagnetic state, the ferromagnetic state, and the spin glass state, respectively, obtained by the first principle electronic state calculation.
- the solid line in the figure represents the total density of states
- the alternate long and short dash line represents the local state density at the 3 d orbital position of V
- the broken line represents the local state density at the 3 d orbital position of Co.
- FIG. 7 shows only the state density curve of the upward spin electrons in the spin glass state, and the state density curve of the downward spin electrons is the same as that of the upward spin electrons, and is not shown.
- the bandgap G p is formed by the density of states of the downward spin electrons, and a Fermi energy exists in the bandgap, while the upward direction
- the density of states of the spin electrons is larger than zero near the Fermi energy, and it can be said that the half-medium is manifested.
- the density of states of the upward spin electrons and the downward spin electrons are both greater than zero near the Fermi energy. It can be said that half-metallic is not expressed.
- the density of states of upward spin electrons is higher than zero near the Fermi energy.
- the density of states of down-spin electrons is larger than zero near the Fermi energy, and it can be said that half-metallicity is not expressed.
- the antiferromagnetic state is the most stable and the antiferromagnetism appears.
- the antiferromagnetic transition temperature was calculated to be 349 K.
- the diluted antiferromagnetic half-matrix semiconductor of this example has a high antiferromagnetic transition temperature above room temperature, and can therefore be used for devices operating at room temperature or higher.
- Diluted antiferromagnetic half-metallic semiconductor of this embodiment the composition formula (Zn 0. 9 Cr 0. 05 ⁇ _Omikuron .. 05) are represented by Omicron, a pi-VI group compound semiconductor of Group II elements ⁇ ⁇ A part of is substituted with transition metal elements Cr and Co.
- a ZnO thin film is grown on a GaAs (100) substrate by the laser MBE method, and at the same time, Cr and Co are added by 5% each.
- the present inventor performed first-principles electronic state calculations in the same manner as in the first example in order to confirm that half-metallicity and antiferromagnetism are expressed by the manufacturing method described above.
- 8 and 9 show the state density curves in the antiferromagnetic state and the spin glass state obtained by the first principle electronic state calculation.
- the solid line in the figure represents the density of all states
- the alternate long and short dash line represents the local state density at the 3d orbital position of Cr
- the dashed line represents the local state density at the 3d orbital position of Co.
- Fig. 9 shows only the state density curve of the upward spin electrons in the spin glass state, and the state density curve of the downward spin electrons. Since the line is the same as the upward spin electron, the illustration is omitted.
- the density of states of the downward spin electrons forms a band gap G p, and Fermi energy 1 exists in the band gap, while the upward direction
- the density of states of the spin electrons is larger than zero near the Fermi energy, and it can be said that half-metallicity is manifested.
- the density of states of the upward spin electron is greater than zero near the Fermi energy.
- the density of states of the downward spin electrons is larger than zero near the Fermi energy, and it can be said that half-metallicity is not expressed. In addition, it was confirmed that half-metallicity does not appear even in the ferromagnetic state.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- the antiferromagnetic transition temperature was calculated as 4 8 4 K.
- the diluted antiferromagnetic half-matrix semiconductor of this example has a high antiferromagnetic transition temperature above room temperature, and can therefore be used for devices operating at room temperature or higher.
- Diluted antiferromagnetic half-metallic semiconductor of this embodiment the composition formula (Z n 0. 9 C r 5 F e .. 0 5) is represented by S e, a II- VI group compound semiconductor Z n S e A part of the group II element Z n in this group is replaced by the transition metal elements Cr and Fe.
- a ZnSe thin film is grown on a GaAs (l 0 0) substrate by the laser MBE method, and at the same time (5% each of ⁇ and e are added. To do.
- Figures 10 and 11 show antiferromagnetism obtained by first-principles electronic state calculations. It represents a state density curve in a state and a spin glass state.
- the solid line in the figure represents the total state density
- the alternate long and short dash line represents the local state density at the 3d orbital position of Cr
- the broken line represents the local state density at the 3d orbital position of Fe.
- FIG. 11 shows only the state density curve of the upward spin electrons in the spin glass state, and the state density curve of the downward spin electrons is the same as that of the upward spin electrons, and is not shown.
- the density of states of the downward spin electrons becomes zero and a band gap G p is formed, and while Fermi energy exists in the band gap, the upward direction
- the density of states of the spin electrons is larger than zero near the full energy level, and it can be said that the half-matrix is manifested.
- the density of states of the upward spin electrons is greater than zero near the film energy.
- the density of states of the downward spin electrons becomes larger than zero near the Fermi energy, and it can be said that the half-metallicity is not expressed.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- the antiferromagnetic transition temperature was calculated to be 3 15 K.
- the diluted antiferromagnetic half-metallic semiconductor of this example has a high antiferromagnetic transition temperature above room temperature, and therefore can be used for devices that operate at room temperature or higher.
- composition formula (Z n 0. 9 C r 0. 0 5 F e. .. 5) is represented by 0, a II- VI group compound semiconductor Z Part of the n 0 group II element Z n is replaced by the transition metal elements Cr and Fe.
- G a A s (1 0 0) A Z ⁇ thin film is grown on the substrate by the laser MBE method, and at the same time, Cr and Fe are added by 5% each.
- Figure 12 shows the state density curve in the antiferromagnetic state obtained by the first principle electronic state calculation.
- the solid line in the figure represents the total density of states
- the alternate long and short dash line represents the local state density at the 3d orbital position of Cr
- the broken line represents the local state density at the 3d orbital position of Fe.
- the density of states of the upward spin electrons is zero, and a bandgap G p is formed, and Fermi energy exists in the band gap, while the density of states of the downward spin electrons is Fermi. It is larger than zero near energy, and it can be said that half-metallicity is manifested. In the ferromagnetic state and spin glass state, it was confirmed that the half-matrix does not appear.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- composition formula Cu (Al Q. 9 V., 0 5 Mn ... 5) is represented by S 2, a I- III-VI group compound semiconductor CuAl Part of S 2 group element A 1 is substituted with transition metal elements V and M n.
- a CuA 1 S 2 thin film is grown on a GaAs (l 0 0) substrate by a laser MBE method, and at the same time, 5% of V and Mn are added.
- FIGS. 13 to 15 show the state density curves in the antiferromagnetic state, the ferromagnetic state, and the spin glass state, respectively, obtained by the first principle electronic state calculation.
- the solid line represents the total density of states
- the alternate long and short dash line represents the local state density at the 3d orbital position of V
- the broken line represents the local state density at the 3d orbital position of Mn.
- FIG. 15 shows only the state density curve of the upward spin electrons in the spin glass state, and the state density curve of the downward spin electrons is the same as that of the upward spin electrons, and is not shown.
- the density of states of the upward spin electrons becomes zero and the band gap G p is formed, and while Fermi energy exists in the band gap, the downward direction
- the density of states of the spin electrons is larger than zero near the full energy level, and it can be said that the half-matrix is manifested.
- the density of states of the upward spin electrons is larger than zero near the Fermi energy. Also, the density of states of the downward spin electrons becomes larger than zero near the Fermi energy, and it can be said that half-metallicity is not expressed.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- the present inventors can also add two kinds of magnetic elements 1 ⁇ 1 and 6 or two kinds of magnetic elements M n and C 0 to 0 & 3 2 , and antiferromagnetic half It was confirmed by first-principles electronic state calculation that an evening semiconductor could be obtained. Also, Cu A 1 S 2 has two types of magnetic elements, Cr and M n, or two types of magnetic elements, M n and Fe It was confirmed by first-principles electronic state calculation that an antiferromagnetic half-metallic semiconductor can also be obtained by adding elements.
- Diluted antiferromagnetic half-metallic semiconductor of this embodiment formula (211 0. 9 01 0. 05 Mn 0 .. 25 Co 0. 025) is represented by S, the ZnS is II one VI compound semiconductor Part of group II element Zn is replaced by transition metal elements Cr, Mn, and C0.
- a ZnS thin film is grown on a GaAs (l 0 0) substrate by a laser MBE method, and at the same time, Cr is added by 5%, and Mn and C 0 are added by 2.5%. To do.
- FIGS. 16 to 18 show the state density curves in the antiferromagnetic state, the ferromagnetic state, and the spin glass state, respectively, obtained by the first principle electronic state calculation.
- the solid line is the total density of states
- the one-dot chain line is the local state density at the 3d orbital position of Cr
- the broken line is the local state density at the 3d orbital position of Mn
- the two-dot chain line is the 3d orbital position of Co It represents the local density of states at.
- FIG. 18 shows only the state density curve of the upward spin electron in the spin glass state, and the state density curve of the downward spin electron is the same as that of the upward spin electron, and is not shown. .
- the density of states of the downward spin electrons becomes zero and a band gap Gp is formed, and while Fermi energy exists in the band gap, the upward spin electrons
- the density of states is greater than zero near the Fermi energy — and it can be said that a half-medium is manifested.
- the density of states of the upward spin electrons and the downward spin electrons are both greater than zero near the film energy, and the half-metallicity appears. It can be said that they have not.
- the state density of the upward spin electrons is greater than zero near the Fermi energy.
- the density of states of the downward spin electrons is greater than zero near the full energy, and it can be said that no half-metallicity has developed.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- the present inventors have confirmed by the first principle electronic state calculation that an antiferromagnetic half-metallic semiconductor can also be obtained by adding three kinds of magnetic elements, ⁇ and Fe.
- T i .. 9 Mn 0. 05 Co .. 05 Dilute antiferromagnetic Hafume evening Rick semiconductor of this embodiment, the composition formula (T i .. 9 Mn 0. 05 Co .. 05) in O 2.
- an oxide semiconductor T i0 2 elements T Part of i is substituted with transition metal elements Mn and C0.
- T I_ ⁇ 2 has a rutile-type crystal structure.
- a Ti 0 2 thin film is grown on a GaAs (l 0 0) substrate by a laser MBE method, and at the same time, 5% of Mn and Co are added.
- Figure 19 shows the state density curve in the antiferromagnetic state obtained by the first principle electronic state calculation.
- the thick solid line in the figure represents the total density of states
- the alternate long and short dash line represents the local state density at the 3d orbital position of Mn
- the thin solid line represents the local state density at the 3d orbital position of C0.
- the state density of the downward spin electrons becomes zero and a band gap Gp is formed, and while the ferm energy exists in the band gap, the upward direction Spin electron density of states is Fermi It is greater than zero near energy, and half-metallic is manifested.
- the antiferromagnetic state is the most stable, and it can be said that antiferromagnetism appears.
- Figure 20 is a composition formula (T i 0. 9 F e 0. 0 5 C 0 0. 05) state density curve in an antiferromagnetic state obtained by the first principle electronic state calculation of a semiconductor represented by O 2 Is shown.
- the thick solid line in the figure represents the total density of states
- the broken line represents the local state density at the Fe 3d orbital position
- the thin solid line represents the local state density at the Co 3d orbital position.
- the bandgap Gp is formed when the density of states of the downward spin electrons becomes zero, and Fermi energy exists in the bandgap group, while The density of states is larger than zero near the Fermi energy, and it can be said that half-metallicity is manifested.
- Figure 21 is a compositional formula (1 1 1 _ .. 9 ⁇ ] ⁇ .05 (0 .. 05) 0 2 in an antiferromagnetic obtained by semiconductor Ni'ite first principle electronic state calculation being Table pictmap
- the thick solid line represents the total state density
- the dotted line represents the local state density at the 3d orbital position of Cr
- the thin solid line represents the local state density at the 3d orbital position of Co.
- the bandgap Gp is formed when the density of states of the downward spin electrons becomes zero, while Fermi energy exists in the bandgap.
- the density of states of the upward spin electrons is larger than zero near the Fermi energy, and it can be said that the half metric is expressed.
- the energy in the antiferromagnetic state was the lowest.
- FIG. 1 9 to FIG. 2. 1, but it represents the calculation results for cases with the addition of 2 types of magnetic element T i 0 2 rutile type, and electronic states of T i 0 2 rutile since Ana T i 0 2 of the electronic state of the evening over peptidase type is substantially the same, antiferromagnetic half-metallic semiconductor by adding magnetic elements of two types in T i 0 2 of anatase Re obtain et al Yes.
Abstract
Description
Claims
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US11/573,509 US7790585B2 (en) | 2004-09-10 | 2005-09-09 | Antiferromagnetic half-metallic semiconductor and manufacturing method therefor |
EP05783704A EP1788589A4 (en) | 2004-09-10 | 2005-09-09 | ANTIFERROMAGNETIC SEMICONDUCTED SEMICONDUCTOR AND METHOD OF MANUFACTURING THEREOF |
JP2006535214A JPWO2006028299A1 (ja) | 2004-09-10 | 2005-09-09 | 反強磁性ハーフメタリック半導体及びその製造方法 |
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Cited By (4)
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WO2010032527A1 (ja) * | 2008-09-18 | 2010-03-25 | 国立大学法人大阪大学 | 磁気抵抗効果膜、及びこれを具えた磁気抵抗効果素子、並びに磁気デバイス |
US20110017938A1 (en) * | 2008-03-21 | 2011-01-27 | Osaka University | Half-metallic antiferromagnetic material |
WO2011034161A1 (ja) * | 2009-09-18 | 2011-03-24 | 国立大学法人大阪大学 | ハーフメタリック反強磁性体 |
JP2013021328A (ja) * | 2011-07-07 | 2013-01-31 | Samsung Electronics Co Ltd | 半金属強磁性体を用いた磁気接合を提供するための方法及びシステム |
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US9735280B2 (en) | 2012-03-02 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film |
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JP3537086B2 (ja) | 2000-09-08 | 2004-06-14 | 独立行政法人産業技術総合研究所 | スピンエレクトロニクス材料およびその作製方法 |
KR100531514B1 (ko) * | 2001-03-02 | 2005-11-28 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Ⅱ-ⅵ족 또는 ⅲ-ⅴ족계 단결정(單結晶) 강자성(强磁性)산화물및 그 강자성 특성의 조정방법 |
JP3938284B2 (ja) * | 2001-03-02 | 2007-06-27 | 独立行政法人科学技術振興機構 | 強磁性GaN系混晶化合物及びその強磁性特性の調整方法 |
JP3989182B2 (ja) * | 2001-03-02 | 2007-10-10 | 独立行政法人科学技術振興機構 | 強磁性iii−v族系化合物及びその強磁性特性の調整方法 |
JP3998425B2 (ja) * | 2001-03-02 | 2007-10-24 | 独立行政法人科学技術振興機構 | 強磁性ii−vi族系化合物及びその強磁性特性の調整方法 |
JP2003137698A (ja) | 2001-10-26 | 2003-05-14 | Ulvac Japan Ltd | Iii−v族半導体材料 |
JP4494688B2 (ja) * | 2001-12-04 | 2010-06-30 | 独立行政法人科学技術振興機構 | 磁性半導体をメモリに用いる方法 |
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"Novel Mn-doped chalcopyrites.", JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS., vol. 64, no. 9, 2003, pages 1461 - 1468, XP002993733 * |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110017938A1 (en) * | 2008-03-21 | 2011-01-27 | Osaka University | Half-metallic antiferromagnetic material |
WO2010032527A1 (ja) * | 2008-09-18 | 2010-03-25 | 国立大学法人大阪大学 | 磁気抵抗効果膜、及びこれを具えた磁気抵抗効果素子、並びに磁気デバイス |
JP2010073882A (ja) * | 2008-09-18 | 2010-04-02 | Osaka Univ | 磁気抵抗効果膜、及びこれを具えた磁気抵抗効果素子、並びに磁気デバイス |
WO2011034161A1 (ja) * | 2009-09-18 | 2011-03-24 | 国立大学法人大阪大学 | ハーフメタリック反強磁性体 |
JP2011066334A (ja) * | 2009-09-18 | 2011-03-31 | Osaka Univ | ハーフメタリック反強磁性体 |
KR101380017B1 (ko) | 2009-09-18 | 2014-04-02 | 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 | 하프 메탈릭 반강자성체 |
JP2013021328A (ja) * | 2011-07-07 | 2013-01-31 | Samsung Electronics Co Ltd | 半金属強磁性体を用いた磁気接合を提供するための方法及びシステム |
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US20090224340A1 (en) | 2009-09-10 |
EP1788589A1 (en) | 2007-05-23 |
US7790585B2 (en) | 2010-09-07 |
EP1788589A4 (en) | 2009-01-14 |
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