JP2013021328A - 半金属強磁性体を用いた磁気接合を提供するための方法及びシステム - Google Patents
半金属強磁性体を用いた磁気接合を提供するための方法及びシステム Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
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Abstract
【解決手段】磁気接合は、ピンド層と、非磁性スペーサ層と、自由層とを含む。非磁性スペーサ層はピンド層と自由層との間に存在する。磁気接合は、書き込み電流がその磁気接合に流された際に自由層が複数の安定磁気状態の間でスイッチング可能であるように構成される。自由層及びピンド層のうち少なくとも一方は少なくとも一つの半金属を含む。
【選択図】図2
Description
102 ピニング層
110 ピンド層
120 非磁性スペーサ層
130 自由層
Claims (23)
- 磁気デバイスに使用される磁気接合であって、
ピンド層磁化を有するピンド層と、
非磁性スペーサ層と、
磁化容易軸を有する自由層とを備え、
前記非磁性スペーサ層が前記ピンド層と前記自由層との間の存在し、前記自由層及び前記ピンド層のうち少なくとも一方が少なくとも一つの半金属を含み、
前記磁気接合が、書き込み電流が前記磁気接合に流された際に前記自由層が複数の安定磁気状態の間でスイッチング可能であるように構成されている、磁気接合。 - 前記自由層の磁化容易軸が面に垂直である、請求項1に記載の磁気接合。
- 前記自由層の磁化容易軸が面内にある、請求項1に記載の磁気接合。
- 前記少なくとも一つの半金属が、CrO2、Sr2FeMoO6、(La0.7Sr0.3)MnO3、Fe3O4、NiMnSbのうち少なくとも一つを含む、請求項1に記載の磁気接合。
- 前記少なくとも一つの半金属がT=XYZを含み、Xが、Mn、Fe、Co、Ni、Cu、Zn、Ru、Rh、Pd、Ag、Cd、Ir、Pt及びAuから選択され、Yが、Ti、V、Cr、Mn、Fe、Y、Zr、Nb、Hf、Ta、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuから選択され、ZがAl、Si、Ga、Ge、As、In、Sn、Sb、Pb及びBiから選択されている、請求項1に記載の磁気接合。
- 前記少なくとも一つの半金属がTMを含み、T=XYZであり、XがMn、Fe、Co、Ni、Cu、Zn、Ru、Rh、Pd、Ag、Cd、Ir、Pt及びAuから選択され、YがTi、V、Cr、Mn、Fe、Y、Zr、Nb、Hf、Ta、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuから選択され、ZがAl、Si、Ga、Ge、As、In、Sn、Sb、Pb及びBiから選択され、MがMn、Fe、Co、Ni、Cu、Zn、Ru、Rh、Pd、Ag、Cd、Ir、Pt、Au、Ti、V、Cr、Mn、Fe、Y、Zr、Nb、Hf、Ta、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Si、Ga、Ge、As、In、Sn、Sb、Pr及びBiから選択されている、請求項1に記載の磁気接合。
- 前記少なくとも一つの半金属がRE1−xMxMnO3を含み、xが1以下であり、MがCa、Sr、Ba又はPbであり、REが希土類金属及びアルカリ土類金属から選択されている、請求項1に記載の磁気接合。
- 前記希土類金属がLa、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuから選択されている、請求項7に記載の磁気接合。
- 前記アルカリ土類金属がBe、Mg、Ca、Sr、Ba及びRaから選択されている、請求項7に記載の磁気接合。
- 前記少なくとも一つの半金属が少なくとも一つの二重ペロブスカイトA2MM’O6を含み、Aが希土類金属及びアルカリ土類金属から選択され、M及びM’がSc、Ti、V、Mn、Fe、Co、Ni、Cu、Zn、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Hf、Ta、W、Re、Pt、Au及びHgから選択された二つの異なる元素である、請求項1に記載の磁気接合。
- 前記希土類金属がLa、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuから選択されている、請求項10に記載の磁気接合。
- 前記アルカリ土類金属がBe、Mg、Ca、Sr、Ba及びRaから選択されている、請求項10に記載の磁気接合。
- 前記少なくとも一つの半金属がCrO2及びFe3O4のうち少なくとも一方を含む、請求項1に記載の磁気接合。
- 前記自由層が磁化容易円錐磁気異方性を更に有する、請求項1に記載の磁気接合。
- 前記自由層が、高垂直異方性層と、負垂直異方性層と、前記高垂直異方性層と前記負垂直異方性層との間の相互作用制御層とを更に含み、前記高垂直異方性層及び前記負垂直異方性層が前記磁化容易円錐磁気異方性を提供する、請求項14に記載の磁気接合。
- 前記ピンド層が、ピンド層磁化を有し、且つ中心部と、第一の縁部と、第二の縁部とを有し、前記非磁性スペーサ層が前記自由層と前記ピンド層との間に存在し、前記ピンド層磁化が少なくとも前記第一の縁部及び前記第二の縁部において実質的に面に垂直であり、前記中心部において実質的に面内にあるように、前記ピンド層磁化が前記ピンド層にわたって変化している、請求項1に記載の磁気接合。
- 前記ピンド層が、面外消磁エネルギーと、前記面外消磁エネルギーの少なくとも85パーセントの垂直異方性とを有する、請求項16に記載の磁気接合。
- 追加の非磁性スペーサ層と、
追加のピンド層とを更に備え、
前記自由層が前記追加の非磁性スペーサ層と前記非磁性スペーサ層との間に存在し、
前記追加の非磁性スペーサ層が前記自由層と前記追加のピンド層との間に存在している、請求項1に記載の磁気接合。 - 前記自由層において磁気バイアスを提供するバイアス構造を更に備え、
前記バイアス構造が、前記追加のピンド層から実質的に交換分離された磁気部分を有し、前記磁気バイアスが前記自由層の磁化容易軸に実質的に垂直であり、
前記磁気接合が、書き込み電流が前記磁気接合に流された際に前記自由層が複数の安定磁気状態の間でスイッチング可能であるように構成されている、請求項18に記載の磁気接合。 - 前記バイアス構造が、前記追加のピンド層に接する非磁性層と、バイアス層磁化を有するバイアス層とを含み、前記バイアス層磁化が、前記自由層の磁化容易軸に実質的に垂直であり且つ面内にある、請求項19に記載の磁気接合。
- 前記ピンド層が、ピンド層磁化を有し、且つ中心部と、第一の縁部と、第二の縁部とを有し、前記非磁性スペーサ層が前記自由層と前記ピンド層との間に存在し、前記ピンド層磁化が少なくとも前記第一の縁部及び前記第二の縁部において実質的に面に垂直であり、前記中心部において実質的に面内にあるように、前記ピンド層磁化が前記ピンド層にわたって変化している、請求項18に記載の磁気接合。
- 複数の磁気ストレージセルと、
複数のビットラインとを備えた磁気メモリであって、
前記複数の磁気ストレージセルの各々が少なくとも一つの磁気接合を有し、前記少なくとも一つの磁気接合が、ピンド層磁化を有するピンド層と、非磁性スペーサ層と、磁化容易軸を有する自由層とを含み、前記磁性スペーサ層が前記ピンド層と前記自由層との間に存在し、前記自由層及び前記ピンド層のうち少なくとも一方が少なくとも一つの半金属を含み、前記磁気接合が、書き込み電流が前記磁気接合に流された際に前記自由層が複数の安定磁気状態の間でスイッチング可能であるように構成されている、磁気メモリ。 - 磁気デバイスに使用される磁気接合を提供するための方法であって、
ピンド層磁化を有するピンド層を提供するステップと、
非磁性スペーサ層を提供するステップと、
磁化容易軸を有する自由層を提供するステップとを備え、
前記非磁性スペーサ層が前記ピンド層と前記自由層との間に存在し、前記自由層及び前記ピンド層のうち少なくとも一方が少なくとも一つの半金属を含み、
前記磁気接合が、書き込み電流が前記磁気接合に流された際に前記自由層が複数の安定磁気状態の間でスイッチング可能であるように構成される、方法。
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CN102867538A (zh) | 2013-01-09 |
CN102867538B (zh) | 2017-03-01 |
KR101953791B1 (ko) | 2019-06-12 |
US8766383B2 (en) | 2014-07-01 |
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US20130009260A1 (en) | 2013-01-10 |
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