WO2006025266A1 - ディスプレイ用部材の露光方法およびプラズマディスプレイ用部材の製造方法 - Google Patents
ディスプレイ用部材の露光方法およびプラズマディスプレイ用部材の製造方法 Download PDFInfo
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- WO2006025266A1 WO2006025266A1 PCT/JP2005/015503 JP2005015503W WO2006025266A1 WO 2006025266 A1 WO2006025266 A1 WO 2006025266A1 JP 2005015503 W JP2005015503 W JP 2005015503W WO 2006025266 A1 WO2006025266 A1 WO 2006025266A1
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- pattern
- photomask
- display member
- exposure
- photosensitive
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/36—Spacers, barriers, ribs, partitions or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
- H01J9/242—Spacers between faceplate and backplate
Definitions
- the present invention relates to a method for exposing a display member, and further relates to a method for manufacturing a plasma display member using this exposure method.
- PDP Thin display ⁇ Plasma display panels
- dielectric layer dielectric layer, MgO layer, partition wall layer, and phosphor layer that make up these PDPs
- a photosensitive paste is applied on the substrate.
- a method of stacking, exposing through a photomask having a desired pattern, and then developing using a desired developer is known.
- Patent Document 1 a method of forming a partition layer by forming a layer made of ceramic powder and UV-curable resin on a substrate and exposing and developing through a photomask having a desired pattern
- Patent Document 2 Applying glass paste on the substrate 'Drying, applying resist, exposing and developing the resist through a photomask having a desired pattern, and then forming a partition pattern by sandblasting
- Patent Document 3 a method of applying a photosensitive phosphor paste on the barrier layer and exposing it through a photomask.
- Patent Document 4 JP-A-2-165538
- Patent Document 2 JP-A-7-320641
- Patent Document 3 Japanese Unexamined Patent Publication No. 2000-113614
- Patent Document 4 Japanese Patent Laid-Open No. 2004-240095
- an object of the present invention is to provide a method for manufacturing a display member having a high yield in which defects such as disconnection or short circuit are unlikely to occur.
- the present invention has the following configuration. That is, the present invention is an exposure method for a display member in which an exposure operation is performed on a display member having a photosensitive layer formed on a substrate through a photomask having a desired pattern, and the photomask is exposed during the exposure operation. And a substrate are moved relative to each other. Moreover, this invention is a manufacturing method of the member for a display using the said exposure method.
- an exposure method for a display member having a high yield which suppresses occurrence of defects such as disconnection or short-circuiting of non-turns even when foreign matter adheres to the photomask or has scratches. Can be provided.
- FIG. 1 is an explanatory diagram of an exposure method for a display member according to the present invention.
- FIG. 2 is a perspective view showing an example of the shape of a partition wall manufactured according to the present invention.
- FIG. 3 is a perspective view showing an example of the shape of a partition wall manufactured according to the present invention.
- FIG. 4 is a perspective view showing an example of the shape of a partition wall manufactured according to the present invention.
- FIG. 5 is a schematic view showing an example of the shape of a partition wall produced according to the present invention.
- FIG. 6 is a schematic view showing an example of the shape of a partition wall manufactured according to the present invention.
- FIG. 7 is a schematic diagram showing an example of the shape of a partition wall manufactured according to the present invention. Explanation of symbols
- the present invention is characterized by including an exposure step of performing an exposure operation on at least a photosensitive layer formed on a substrate through a photomask having a desired pattern.
- the exposure operation here refers to an operation of continuously irradiating energy rays through a photomask having a desired pattern. Therefore, a single exposure operation refers to an operation from the start of irradiation with energy rays to the end of irradiation with force.
- the photomask refers to a photomask in which a portion that transmits the energy beam and a portion that blocks the light are arranged in a desired pattern.
- the part where the energy beam is transmitted through such as a photomask cover
- the part where the energy beam is transmitted through is cured, and when it is a positive type, the part is decomposed and is removed by a desired developer.
- the target pattern is formed by dissolving and removing.
- a method of exposing a photomask or a substrate while driving it an exposure method in which a photomask and a substrate are relatively moved during an exposure operation as shown in FIG. 1).
- move the photomask or substrate once and then expose again exposure method that moves the photomask and substrate relative to each other during at least two exposure operations. Since the location where the energy rays are shielded by foreign matter, scratches, bubbles, etc. is not fixed, the occurrence of defects in the resulting pattern can be prevented.
- the present invention is hereinafter referred to as plasma. A description will be given along the forming method of each layer constituting the display member (hereinafter abbreviated as PDP member).
- PDP members consist of a plurality of pairs of sustain electrode layers, black stripe layers, dielectric layers, MgO layers, etc., a front plate, an address electrode layer, a dielectric layer, a partition layer, and a phosphor layer. It consists of a back plate that is also configured with force.
- the sustain electrode on the front plate and the address electrode on the back plate it means that a metal such as silver, aluminum, chromium, or nickel is arranged in a desired pattern on the substrate.
- a metal such as silver, aluminum, chromium, or nickel
- the substrate used in the present invention include “PD200” manufactured by Asahi Glass Co., Ltd. and “PP8” manufactured by Nippon Electric Glass Co., Ltd., which are heat-resistant glass for PDP, in addition to soda glass.
- the invention of the above (2) is often applied. That is, the photosensitive metal paced coating film formed on the substrate and the position of the photomask having the desired pattern are aligned and exposed once (exposure operation 1), and the substrate or photomask is moved by a desired amount. By aligning again and performing exposure (exposure operation 2), it is possible to suppress the occurrence of defects due to foreign matter, scratches, bubbles, etc. adhering to the photomask.
- the electrode layer of the PDP member is generally composed of a terminal portion, a connection lead portion, and a display portion.
- the block units of the terminal portions have the same pattern. That is, the movement from the exposure operation 1 to the exposure operation 2 is performed at the same pitch as the terminal block, so that the pattern can be matched.
- the thickness of the electrode formed in the present invention is preferably 1 to 10 ⁇ m, more preferably 2 to 7 ⁇ m.
- the line width of the electrode layer is preferably 20 to 2300 ⁇ m, more preferably 30 to 200 ⁇ m. If the line width force of the electrode layer is too high, the resistance value tends to be high and accurate driving tends to be difficult. Since the distance between the electrodes is small, short defects tend to occur.
- the electrode layers are formed at a pitch corresponding to the display cell (region for forming each RGB of the pixel). The pitch is preferably 100 to 500 ⁇ m for normal PDP and 100 to 400 ⁇ m for high definition PDP.
- the dielectrics of the front plate and the back plate are formed by applying a glass paste mainly composed of glass powder and an organic binder so as to cover the electrode layer and then baking at 400 to 600 ° C. it can.
- a glass paste used for the dielectric layer glass powder containing at least one of lead oxide, bismuth oxide, zinc oxide, and phosphorus oxide, and containing 10 to 80% by weight in total can be preferably used. . By making it 10% by weight or more, firing at 600 ° C or lower becomes easy, and by making it 80% by weight or less, crystallization is prevented and the transmittance is prevented from being lowered.
- a paste can be prepared by kneading these glass powder and an organic binder.
- organic binder examples include cellulose compounds typified by ethyl cellulose, methyl cellulose and the like, methyl methacrylate, ethyl carbonate, isobutyl methacrylate, methyl acrylate, ethyl acrylate, and isobutyl acrylate.
- Acrylic compounds can be used.
- additives such as a solvent and a plasticizer may be added to the glass paste.
- the solvent general solvents such as terbineol, butyrolatatane, toluene, methyl cellosolve and the like can be used.
- the plasticizer dibutyl phthalate, jetyl phthalate, or the like can be used.
- a filler component in addition to glass powder, a highly reflective PDP with high reflectivity can be obtained.
- the filler it is particularly preferable to use titanium oxide having a particle size of 0.05 to 3 ⁇ m, which is preferably titanium oxide, aluminum oxide, zirconium oxide or the like.
- the filler content is preferably a glass powder: filler weight ratio of 1: 1 to 10: 1.
- the filler content 1/10 or more of the glass powder, the effect of improving the brightness can be obtained. Moreover, sinterability can be maintained by making it equal to or less than the glass powder.
- the conductive fine particles preferably have a particle diameter of 1 to 10 ⁇ m, which is preferable for metal powders such as nickel and chromium. 1 ⁇ m or more is sufficient The effect can be exhibited, and by setting the length to 10 m or less, the unevenness on the dielectric can be suppressed and the partition can be formed easily.
- the content of these conductive fine particles contained in the dielectric layer is preferably 0.1 to LO weight%.
- Effectiveness can be obtained when the content is 0.1% by weight or more, and short-circuiting between adjacent address electrodes can be prevented when the content is 10% by weight or less.
- the thickness of the dielectric layer is preferably 3 to 30 ⁇ m, more preferably 3 to 15 ⁇ m. If the thickness of the dielectric layer is too thin, pinholes tend to occur frequently, and if it is too thick, the discharge voltage tends to increase and the power consumption tends to increase.
- the dielectric layer preferably has a structure having a desired uneven pattern.
- a photosensitive dielectric paste using a photosensitive organic component may be used as the organic binder.
- the photosensitive organic component contains at least one selected from among photosensitive monomers, photosensitive oligomers, and photosensitive polymers. Add polymerization initiator, light absorber, sensitizer, organic solvent, sensitization aid, polymerization inhibitor.
- the photosensitive monomer is a compound containing a carbon-carbon unsaturated bond, and specific examples thereof include monofunctional and polyfunctional (meth) acrylates, vinyl compounds, aryl compounds. Etc. can be used. One or more of these can be used.
- the photosensitive oligomer and photosensitive polymer an oligomer or polymer obtained by polymerizing at least one of compounds having a carbon-carbon double bond can be used. Upon polymerization, these monomers can be copolymerized with other photosensitive monomers so that the content power is 10% by weight or more, more preferably 35% by weight or more.
- an unsaturated acid such as an unsaturated carboxylic acid with a polymer or oligomer
- the developability after exposure can be improved.
- the unsaturated carboxylic acid include acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, bulacetic acid, and acid anhydrides thereof.
- the acid value (AV) of the polymer or oligomer having an acid group such as a carboxyl group in the side chain thus obtained is preferably in the range of 50 to 180, more preferably in the range of 70 to 140.
- AV acid value
- Preferred photoreactive groups are those having an ethylenically unsaturated group. Examples of the ethylenically unsaturated group include a bur group, a allyl group, an acryl group, and a methacryl group.
- the photopolymerization initiator include benzophenone, methyl 0-benzoylbenzoate, 4,4-bis (dimethylamino) benzophenone, 4,4-bis (jetylamino) benzophenone, 4,4-dichroate. Nzophenone, 4-benzoyl 4 methylphenylketone, dibenzylketone, fluorenone, 2,3 diethoxyacetophenone, 2,2 dimethoxy-1-2-phenol-2-phenol-acetophenone. One or more of these can be used.
- the photopolymerization initiator is preferably added to the photosensitive component in a range of 0.05 to L0% by weight, more preferably in a range of 0.1 to 5% by weight. If the amount of the polymerization initiator is too small, the photosensitivity tends to decrease, and if the amount of the photopolymerization initiator is too large, the residual ratio of the exposed area tends to be too small.
- a light absorber it is also effective to add a light absorber.
- High aspect ratio, high definition, and high resolution can be obtained by adding a compound that has a high absorption effect for ultraviolet light and visible light.
- the light absorber those having organic dye power are preferably used. Specifically, azo dyes, amino ketone dyes, xanthene dyes, quinoline dyes, anthraquinone dyes, benzophenone dyes are used. Diphenyl cyanoacrylate dyes, triazine dyes, p-aminobenzoic acid dyes, and the like can be used.
- Organic dyes are preferable because they do not remain in the insulating film after firing, and can reduce deterioration of insulating film characteristics due to the light absorber.
- the amount of organic dye added is preferably 0.05 to 5% by weight, more preferably 0.05 to 1% by weight. If the amount added is too small, the effect of adding the light absorbing agent tends to decrease, and if it is too large, the insulating film properties after firing tend to decrease.
- a sensitizer is added to improve sensitivity.
- Specific examples of the sensitizer include 2,4 ethylthioxanthone, isopropyl thioxanthone, 2,3 bis (4-jetylaminobenzal) cyclopentanone, 2,6 bis (4-dimethylaminobenzal) cyclohexanone. Etc. One or more of these can be used.
- organic solvent examples include, for example, methyl mouth solve, ethyl acetate mouth sorb, butyl mouth mouth solve, propylene glycol monomethyl ether acetate, methyl ethyl ketone, dioxane, acetone, cyclohexanone, cyclopentanone, isobutyl alcohol, Isopropyl alcohol, tetrahydrofuran, dimethyl sulfoxide, y-butyllactone, N methylpyrrolidone, N, N dimethylformamide, N, N dimethylacetamide, bromobenzene, black benzene, dibromobenzene, dichlorobenzene, bromobenzoic acid And organic solvent mixtures containing one or more of them.
- the photosensitive paste is usually prepared by mixing the above-mentioned inorganic fine particles and organic components so as to have a predetermined composition, and then homogeneously mixed and dispersed with a three-roller or a kneader.
- the photosensitive dielectric paste is applied on the substrate, it is exposed and developed through a photomask having a desired pattern, whereby a dielectric layer having a desired uneven pattern can be formed on the surface. .
- the present invention When the present invention is applied to the formation of a dielectric layer having such a pattern, when the pattern to be obtained is in the form of stripes, a photosensitive dielectric paced coating film formed on the substrate and A method of aligning a photomask having a desired pattern and exposing the substrate or photomask while moving the substrate or photomask in the extending direction of the stripe pattern, or exposing the coating film once (exposure operation 1), and then a desired amount By moving the substrate or photomask, re-aligning, and applying exposure (exposure operation 2), it is possible to suppress the occurrence of defects due to foreign matter, scratches, bubbles, etc. adhering to the photomask. In the case of a pattern other than stripes, the latter method can be applied.
- a partition wall layer is preferably formed on the dielectric layer.
- the electrode layer can be corrected (repaired) relatively easily even when a pattern has a defect.
- the height of the partition layer is higher than that of the electrode layer, the correction is difficult. Become. Therefore, the present invention is most preferably applied to the method for forming the partition wall layer.
- the partition layer preferably has a trapezoidal or rectangular cross-sectional shape.
- the height of the partition wall constituting the partition layer is suitably 80 ⁇ m to 200 ⁇ m.
- the thickness is suitably 80 ⁇ m to 200 ⁇ m.
- a pitch (P) of 100 / ⁇ ⁇ 500 / ⁇ ⁇ is often used.
- the partition pitch ( ⁇ ) is 100 ⁇ P ⁇ 250 m.
- the discharge space can be widened and sufficient luminance can be obtained, and if it is 500 m or less, the pixel's fineness and clear image display can be achieved. 2
- the line width (L) is preferably 10 111 ⁇ 1 ⁇ ⁇ 50 111 at half width.
- a so-called cross-shaped partition pattern in which auxiliary partitions are formed in a direction perpendicular to the partition is preferably formed in the present invention.
- auxiliary barrier ribs By forming the auxiliary barrier ribs, it is possible to form a phosphor layer on the wall surface of the auxiliary barrier ribs as well, so that the emission area can be increased, and erroneous light emission other than in the cells where the PDP should emit light is assisted. It can be suppressed by a partition wall. Accordingly, it is possible to increase the luminance because ultraviolet rays efficiently act on the phosphor screen.
- the presence of the auxiliary partition wall increases the bonding area of the entire partition wall, and the structural strength of the member can be obtained. As a result, the width of the partition walls and the auxiliary partition walls can be reduced, the discharge volume in the display cell portion can be increased, and the discharge efficiency can be further improved.
- the cross-sectional shape of the auxiliary partition can also be formed into a trapezoid or a rectangle.
- the height of the auxiliary partition wall is preferably 1Z10 to 1Z1 which is the height of the partition wall.
- the height of the auxiliary barrier rib is set to 1Z10 or higher, which is the height of the barrier rib, it is possible to obtain an effect of improving luminance by increasing the light emitting area.
- color mixing during the formation of the phosphor layer and plasma display Considering the occurrence of crosstalk between other colors during play display, it is preferable that the height of the auxiliary partition wall be less than or equal to lZi of the partition wall height.
- auxiliary barrier ribs At the viewpoint of gas discharge and light emission efficiency of the phosphor layer, it is preferable to form the auxiliary barrier ribs at positions and pitches that divide the pixels when the plasma display is combined with the front plate.
- the line width of the auxiliary partition wall is preferably 30 ⁇ m to 700 ⁇ m, more preferably 40 to 600 ⁇ m in terms of the top width.
- the top width of the auxiliary partition wall is preferably 30 m or more, it is possible to obtain a strength that can withstand the process of forming the auxiliary partition wall and subsequent processes.
- the length is 300 m or less, uniform and strong firing can be performed.
- the bottom width of the auxiliary partition wall is 1.1 to 1.5 times the top width of the auxiliary partition wall in order to prevent jumping of the auxiliary partition wall due to firing shrinkage.
- a photolithography method using a photosensitive paste having an insulating inorganic component and a photosensitive organic component is preferably applied in the present invention.
- the inorganic fine particles of the photosensitive paste glass, ceramic (alumina, cordierite, etc.) and the like can be used.
- glass or ceramics containing a key oxide, boron oxide, or aluminum dioxide as an essential component is preferable.
- the particle size of the inorganic fine particles is selected in consideration of the shape of the pattern to be produced.
- the volume average particle size (D50) is preferably 1 to 10 m, more preferably 1 ⁇ 5 m. By making D50 10 m or less, surface irregularities can be prevented. Moreover, the viscosity adjustment of a paste can be made easy by setting it as 1 m or more. Further, it is particularly preferable to use glass fine particles having a specific surface area of 0.2 to 3 m 2 / g in pattern formation.
- the inorganic particle includes 60% by weight or more of glass particles having a thermal softening temperature of 350 ° C to 600 ° C. It is preferable to use inorganic fine particles. Further, by adding glass fine particles or ceramic fine particles having a heat softening temperature of 600 ° C. or higher, the shrinkage rate during firing can be suppressed, but the amount is preferably 40% by weight or less.
- the linear expansion is required. It is preferable to use glass fine particles having an expansion coefficient of 50 ⁇ 10 _7 to 90 ⁇ 10 _7 , more preferably 60 ⁇ 10 _7 to 90 ⁇ 10-7.
- a glass material containing silicon and Z or boron oxide is preferably used.
- the acid chain is blended in the range of 3 to 60% by weight.
- the content By setting the content to 3% by weight or more, the denseness, strength and stability of the glass layer can be improved, and the thermal expansion coefficient can be kept within the desired range to prevent mismatch with the glass substrate.
- the mismatch here means a case where the difference in thermal expansion coefficient between the glass substrate and the glass layer forming the partition walls and the auxiliary partition walls is 20 or more, and further 15 or more. If the difference in thermal expansion coefficient between the two exceeds 20, the substrate will be warped and cracking will easily occur when bonded to the front plate. Further, by making it 60% by weight or less, there are advantages such that the thermal softening point is lowered and baking onto a glass substrate becomes possible.
- the bismuth oxide by containing at least one of bismuth oxide, lead oxide, and zinc oxide in a total amount of 5 to 50% by weight, it has temperature characteristics suitable for patterning on a glass substrate.
- a glass paste can be obtained.
- glass fine particles containing 5 to 50% by weight of bismuth oxide are used, advantages such as a long pot life of the paste can be obtained.
- the bismuth glass particles it is preferable to use glass powder having the following composition.
- Bismuth oxide 10-40 parts by weight
- Silicon oxide 3-50 parts by weight
- Barium oxide 8-20 parts by weight
- Aluminum oxide 10-30 parts by weight.
- Glass fine particles containing 3 to 20% by weight of at least one of lithium oxide, sodium oxide, and potassium oxide may be used. By adding the amount of alkali metal oxide added to 20% by weight or less, preferably 15% by weight or less, the stability of the paste is improved. Can. Of the above three alkali metal oxides, lithium oxide is particularly preferred from the viewpoint of paste stability. As the lithium-based glass fine particles, it is preferable to use glass powder having the following composition, for example.
- glass powder having the following composition is preferably used.
- Lithium oxide 2 15 ⁇
- Barium oxide 2 45 layers J ⁇ part
- glass particles containing both metal oxides such as lead oxide, bismuth oxide, and zinc oxide and alkali metal oxides such as lithium oxide, sodium oxide, and potassium oxide may be used.
- metal oxides such as lead oxide, bismuth oxide, and zinc oxide
- alkali metal oxides such as lithium oxide, sodium oxide, and potassium oxide
- the content is preferably less than 40% by weight, more preferably 25% by weight % Or less.
- the photosensitive organic component it is preferable to contain at least one selected from among photosensitive monomers, photosensitive oligomers, and photosensitive polymers. Add polymerization initiator, light absorber, sensitizer, organic solvent, sensitization aid, polymerization inhibitor.
- the photosensitive monomer is a compound containing a carbon-carbon unsaturated bond, and specific examples thereof include monofunctional and polyfunctional (meth) acrylates, vinyl compounds, aryl compounds. Etc. can be used. One or more of these can be used.
- Photosensitive oligomers and photosensitive polymers include compounds having a carbon-carbon double bond.
- An oligomer or polymer obtained by polymerizing at least one of them can be used. Upon polymerization, these monomers can be copolymerized with other photosensitive monomers so that the content power is 10% by weight or more, more preferably 35% by weight or more.
- an unsaturated acid such as an unsaturated carboxylic acid with a polymer or oligomer
- the developability after exposure can be improved.
- the unsaturated carboxylic acid include acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, bulacetic acid, and acid anhydrides thereof.
- the acid value (AV) of the polymer or oligomer having an acid group such as a carboxyl group in the side chain thus obtained is preferably in the range of 50 to 180, more preferably in the range of 70 to 140.
- a photoreactive group By adding a photoreactive group to the side chain or molecular end of the polymer or oligomer shown above, it can be used as a photosensitive polymer or photosensitive oligomer having photosensitivity.
- Preferred photoreactive groups are those having an ethylenically unsaturated group. Examples of the ethylenically unsaturated group include a bur group, a allyl group, an acryl group, and a methacryl group.
- the photopolymerization initiator examples include benzophenone, methyl 0-benzoylbenzoate, 4,4-bis (dimethylamino) benzophenone, 4,4-bis (jetylamino) benzophenone, 4,4-dichroate. Nzophenone, 4-benzoyl 4 methylphenylketone, dibenzylketone, fluorenone, 2,3 diethoxyacetophenone, 2,2 dimethoxy-1-2-phenol-2-phenol-acetophenone. One or more of these can be used.
- the photopolymerization initiator is preferably added to the photosensitive component in a range of 0.05 to L0% by weight, more preferably in a range of 0.1 to 5% by weight. If the amount of the polymerization initiator is too small, the photosensitivity tends to decrease, and if the amount of the photopolymerization initiator is too large, the residual ratio of the exposed area tends to be too small.
- a light absorber it is also effective to add a light absorber.
- High aspect ratio, high definition, and high resolution can be obtained by adding a compound that has a high absorption effect for ultraviolet light and visible light.
- the light absorber those having organic dye power are preferably used. Specifically, azo dyes, amino ketone dyes, xanthene dyes, quinoline dyes, anthraquinone dyes, benzophenone dyes are used. Diphenyl cyanoacrylate dyes, triazine dyes, p-aminobenzoic acid dyes, and the like can be used. Organic dyes do not remain in the insulating film after firing.
- the amount of organic dye added is preferably 0.05 to 5% by weight, more preferably 0.05 to 1% by weight. If the amount added is too small, the effect of adding the light absorbing agent tends to decrease, and if it is too large, the insulating film properties after firing tend to decrease.
- a sensitizer is added to improve sensitivity.
- Specific examples of the sensitizer include 2,4 ethylthioxanthone, isopropyl thioxanthone, 2,3 bis (4-jetylaminobenzal) cyclopentanone, 2,6 bis (4-dimethylaminobenzal) cyclohexanone. Etc. One or more of these can be used.
- the addition amount is usually 0.05 to 10% by weight, more preferably 0.1 to LO weight% with respect to the photosensitive component. If the amount of the sensitizer is too small, the effect of improving the photosensitivity tends not to be exhibited. If the amount of the sensitizer is too large, the residual ratio of the exposed portion tends to be small.
- organic solvent examples include, for example, methyl solvate, ethyl sorb, butyl solv, propylene glycol monomethyl ether acetate, methyl cetyl ketone, dioxane, acetone, cyclohexanone, cyclopentanone, isobutyl alcohol, Isopropyl alcohol, tetrahydrofuran, dimethyl sulfoxide, y-butyllactone, N methylpyrrolidone, N, N dimethylformamide, N, N dimethylacetamide, bromobenzene, black benzene, dibromobenzene, dichlorobenzene, bromobenzoic acid And organic solvent mixtures containing one or more of them.
- the photosensitive paste is usually prepared by mixing the above-mentioned inorganic fine particles and organic components so as to have a predetermined composition, and then uniformly mixing and dispersing them with a three-roller or a kneader. Next, the above-described photosensitive paste is applied, dried, exposed, developed and baked.
- the photosensitive coating width corresponds to the length L i ⁇ mm of the partition wall pattern constituting the partition layer to be obtained.
- the exposure method of the present invention to be performed later can be effectively carried out.
- the no-turn length is the length of a linear pattern continuous in one direction.
- the end portion of the partition wall pattern has a shape (tapered shape) whose height is attenuated with respect to the coating width end portion.
- the length of the region where the height attenuates is preferably 0.5 to 6 mm, and more preferably 1 to 4 mm.
- a drying oven, a hot plate, an IR furnace, or the like can be used for drying after the application.
- the coated and dried coating film is exposed through a photomask having a desired pattern.
- the exposure operation of irradiating energy rays through the photomask is performed after adjusting the positions of the substrate and the photomask. To do.
- the exposure operation is performed while moving the substrate or the photomask.
- the moving direction of the substrate or photomask at this time needs to be the extending direction of the stripe pattern arranged on the photomask. By doing so, it is possible to suppress unevenness in the exposure amount of the pattern.
- the movement amount of the substrate or photomask during the exposure operation is preferably 0.03 to LOmm, more preferably 0.05 to 7 mm, and further preferably 0.10 to 5 mm.
- the amount of movement is less than 0.03 mm, the effect of suppressing the formation of barrier rib pattern defects due to foreign matter or scratches attached to the photomask is low. If the range is exceeded, the exposure operation time is required and the tact time is lengthened. Therefore, productivity decreases.
- the pattern length provided on the photomask used at this time is preferably longer than the coating width described above.
- the coating width L of the photosensitive paste is preferably 1 to 20 mm, more preferably 1 to LOm. If it is less than the above range, due to movement of the substrate or mask during the exposure operation, the portion corresponding to the end portion of the partition wall pattern will be underexposed, and if the pattern becomes thin, it will be easy to generate a crack. Energy ray light Since there is a concern that unnecessary portions may be cured due to leakage, it is not preferable.
- the thickness of the photosensitive paste coating film becomes thinner toward the end portion in the longitudinal direction of the partition wall pattern (end taper shape).
- the length is preferably 1 to 10 mm, more preferably 1.2 to 8 mm from the coating film terminal portion.
- the portion corresponding to the end portion of the pattern in the longitudinal direction of the partition wall is increased in width of the stripe pattern disposed on the photomask, or circular.
- This method is preferably applied in the present invention.
- width of the pattern at the end of the pattern in the longitudinal direction of the partition wall it depends on the distance that the photomask and substrate are moved relative to each other, but it is 1.2 to 3 times the normal relative distance from the end of the pattern in the longitudinal direction. It is preferable to make it 1.1-5 times thicker than the width of the standard (center part) by the length corresponding to.
- the term “end” refers to the start and end points of a continuous linear pattern V
- standard refers to the area that actually displays video as a PDP.
- an auxiliary partition pattern is obtained.
- the (horizontal stripe) is once exposed by the method described above, and then the partition wall pattern (vertical stripe) is exposed by the above method.
- the auxiliary partition wall or the partition wall is low!
- the pattern on the surface is exposed once by the above method, and an amount of photosensitive paste corresponding to the step between the partition wall and the auxiliary partition wall is applied and dried, and the pattern on the upper side is exposed by the above method.
- a well pattern can be formed.
- the width of the barrier rib pattern (vertical stripe) corresponding to the auxiliary barrier rib end is widened as shown in FIG.
- a method of arranging a plurality of partition wall patterns as shown in FIG. 6 and a method of increasing the end portion width in the pattern longitudinal direction as shown in FIG. 7 are preferably applied in the present invention.
- the width of the partition walls or the area where a plurality of partition walls are formed is the basis for the above-described auxiliary partition exposure operation.
- the force varies depending on the amount of movement of the plate or photomask, preferably 1.2 times or more, more preferably 1.5 times or more of the amount of movement of the substrate or photomask. In this way, the underexposed portion at the end of the auxiliary partition is compensated by the exposure of the partition pattern that is exposed later.
- the end width of the auxiliary barrier rib in the pattern longitudinal direction as shown in Fig. 7 it is preferable to make the pattern length on the photomask shorter than the pattern length that can be obtained.
- the length is preferably the same as the amount of movement.
- the length for increasing the end width is preferably at least 1 time, more preferably 1.1 times or more of the amount of force movement that varies depending on the amount of movement.
- the width of the end portion in the pattern longitudinal direction is preferably 1.2 to 3 times the width of the standard portion. If it is less than the above range, the exposure amount at the end of the pattern tends to be insufficient, and if it exceeds the above range, it tends to remain during development and cause pattern defects.
- Examples of the energy rays used in the exposure operation in the present invention include visible light, near-ultraviolet light, ultraviolet light, electron beam, X-ray, and laser light.
- the light source most preferable for ultraviolet rays, for example, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a halogen lamp, a germicidal lamp and the like can be used.
- an ultrahigh pressure mercury lamp is suitable.
- Exposure conditions vary depending on the coating thickness. 1 ⁇ : Use an ultra-high pressure mercury lamp with an output of LOOmWZcm 2 for 0.1 ⁇ : LO exposure.
- the distance between the photomask and the surface of the photosensitive paste coating film is preferably adjusted to 50 to 500 ⁇ m, more preferably 70 to 400 ⁇ m.
- the gap amount is preferably adjusted to 50 to 500 ⁇ m, more preferably 70 to 400 ⁇ m.
- Development performed after exposure is performed using the difference in solubility between the exposed portion and the unexposed portion in the developer. Development can be performed by dipping, spraying, brushing, etc.
- the developer a solution in which the organic paste can be dissolved is used in the photosensitive paste.
- a compound having an acidic group such as a carboxyl group is present in the photosensitive paste, development can be performed with an alkaline aqueous solution.
- an alkaline aqueous solution sodium hydroxide, sodium carbonate, sodium carbonate aqueous solution, calcium hydroxide aqueous solution or the like can be used.
- the use of the organic alkaline aqueous solution is preferable because the alkaline component can be easily removed during firing.
- the organic alkali a general amine compound can be used. Specific examples include tetramethyl ammonium hydroxide, trimethylbenzyl ammonium hydroxide, monoethanolamine, and diethanolamine.
- the concentration of the alkaline aqueous solution is usually from 0.01 to: LO wt%, more preferably from 0.1 to 5 wt%. If the alkali concentration is too low, the soluble part tends not to be removed. If the alkali concentration is too high, the pattern part tends to peel off or the insoluble part tends to corrode. Further, the development temperature during development is preferably 20 to 50 ° C. for process control.
- the partition / auxiliary partition pattern obtained by development is fired in a firing furnace.
- the firing atmosphere and temperature vary depending on the type of paste and substrate, but firing is performed in an atmosphere of air, nitrogen, hydrogen, or the like.
- As the baking furnace a batch type baking furnace or a roller hearth type continuous baking furnace can be used.
- the firing temperature is preferably 400 to 800 ° C.
- the partition walls are formed directly on the glass substrate, it is better to hold them at 450 to 620 ° C for 10 to 60 minutes for firing.
- phosphor layers that emit light of R (red), G (green), and B (blue) colors are formed between barrier ribs formed in a direction parallel to predetermined address electrodes.
- the phosphor layer can be formed by applying a phosphor paste containing phosphor powder, an organic binder, and an organic solvent as main components between predetermined partitions, drying, and firing if necessary.
- a screen printing plate is used as a method of applying the phosphor paste between predetermined barrier ribs.
- Screen printing method for pattern printing, tip force of discharge nozzle, dispenser method for pattern discharge of phosphor paste, and photosensitive paste using organic components having the above-mentioned photosensitivity as organic pastes for phosphor paste The screen printing method and the dispenser method are preferably applied in the present invention for the reason of the power cost that can apply the phosphor paste of each color to a predetermined place by the method.
- the present invention is preferably applied when the phosphor is formed by a photosensitive paste method.
- the exposure method can be carried out in the same manner as the partition pattern described above.
- Address electrodes were prepared on a glass substrate PD200 (size: 964 X 570 mm) using a photosensitive silver paste.
- a photosensitive silver paste was applied, dried, exposed, developed, and baked to form address electrodes having a line width of 100 ⁇ m, a thickness of 3 ⁇ m, and a pitch of 300 ⁇ m.
- a photosensitive paste was applied on the dielectric layer.
- the photosensitive paste is composed of glass powder and organic components including a photosensitive component.
- the glass powder includes 10% by weight of lithium oxide, 25% by weight of silicon oxide, 30% by weight of boron oxide, 15% by weight of zinc oxide, Glass powder having an average particle diameter of 2 m obtained by grinding glass having a composition of 5% by weight of hyaluminum and 15% by weight of calcium carbonate was used.
- an acrylic polymer of 30 wt 0/0 having free carboxyl groups, trimethylolpropane Atari rate 30 weight 0/0, a photopolymerization initiator "Irugakyua 369" (Ciba-Geigy Ltd. one company ) 10% by weight, y-petit mouth Lataton 30% by weight was used.
- the photosensitive paste was prepared by mixing the glass powder and the organic component containing the photosensitive component at a weight ratio of 70:30 and then kneading them with a roll mill.
- this photosensitive paste was applied using a die coater so that the coating width was 530 mm and the thickness after drying was 200 / zm. Drying was performed in a clean oven (manufactured by Yamato Scientific Co., Ltd.). After drying, prepare a photomask with a stripe pattern with a pitch of 300 ⁇ m, width of 50 ⁇ m, and length of 536 mm, exposure illuminance of 20 mWZcm 2 , exposure time of 20 seconds, between the photomask and the coating film on the substrate After aligning the position of the substrate and the photomask at a distance (gap amount) of 200 ⁇ m, the exposure operation was performed while moving the substrate at a distance of 0.5 mm for 0.025 mmZ seconds in the extension direction of the stripe pattern. . At this time, exposure was performed by scattering a black foreign substance having a size of 100 / zm on the photomask.
- the obtained partition wall pattern was subjected to a defect inspection using an image inspection apparatus (Super Neptune 9 000 manufactured by V Technology). As a result of inspection, the obtained partition wall pattern was free of defects such as disconnection, chipping, thickening, and short circuit.
- Example 1 the substrate was not moved during the exposure operation (the substrate and the photomask were in a stationary state), except that the partition pattern was obtained by the same method, and then image inspection was performed. As a result of the inspection, the obtained barrier rib pattern had countless disconnections and notches in the black foreign material adhering to the photomask.
- Example 1 In the exposure operation of Example 1, after aligning the position of the substrate and the photomask, the exposure operation is performed once for 10 seconds, and then the substrate is moved 0.5 mm over the extension of the stripe pattern arranged on the photomask.
- the barrier pattern was obtained by the same method except that the exposure operation was performed again for 10 seconds.
- the obtained partition wall pattern was subjected to defect inspection with an image inspection apparatus.
- the partition wall pattern obtained was slightly thin in the portion corresponding to the black foreign substance on the photomask, but had no defects such as disconnection, chipping, thickening, and short circuit.
- An address electrode was prepared on a glass substrate PD200 (size: 964 X 570 mm) using a photosensitive silver paste.
- a photosensitive silver paste was applied, dried, exposed, developed, and baked to form address electrodes having a line width of 100 ⁇ m, a thickness of 3 ⁇ m, and a pitch of 300 ⁇ m.
- a photosensitive paste was applied on the dielectric layer.
- the photosensitive paste is composed of glass powder and organic components including a photosensitive component.
- the glass powder includes 10% by weight of lithium oxide, 25% by weight of silicon oxide, 30% by weight of boron oxide, 15% by weight of zinc oxide, Glass powder having an average particle diameter of 2 m obtained by grinding glass having a composition of 5% by weight of hyaluminum and 15% by weight of calcium carbonate was used.
- an acrylic polymer of 30 wt 0/0 having free carboxyl groups, trimethylolpropane Atari rate 30 weight 0/0, a photopolymerization initiator "Irugakyua 369" (Ciba-Geigy Ltd. one company ) 10% by weight, ⁇ -petit mouth Lataton 30% by weight was used.
- the photosensitive paste was prepared by mixing the glass powder and the organic component containing the photosensitive component in a weight ratio of 70:30, and then kneading them with a roll mill.
- this photosensitive paste was applied using a die coater so that the coating width was 530 mm and the thickness after drying was 170 / zm. Drying was performed in a clean oven (manufactured by Yamato Scientific Co., Ltd.).
- the photosensitive paste was applied using a die coater with a coating width of 525 mm, after drying.
- the coating was applied to a thickness of 40 / zm. Drying was performed in a clean oven (Yamato Scientific)
- the exposure operation was performed while moving the substrate at 0.025 mmZ seconds and a distance of 0.5 mm. At this time, exposure was performed by scattering a black foreign substance having a size of 100 m on the photomask.
- the obtained partition wall pattern was inspected for defects with an image inspection device (Super Neptune 90 00 manufactured by V Technology). As a result of the inspection, the obtained partition wall pattern was free from defects such as disconnection, chipping, thickness, and short circuit.
- Example 3 the auxiliary barrier rib and the substrate were not moved during the barrier rib exposure operation (the substrate and the photomask were stationary). Inspection was conducted. As a result of the inspection, the obtained auxiliary barrier ribs and barrier rib patterns had countless disconnections and chippings in the black foreign matter adhering to the photomask.
- Example 1 the photomask (terminal width and standard width 50 ⁇ m) used for exposure of the coating film of the photosensitive paste was stripped pattern length 530 mm, stripe pattern lengthwise end inward.
- the barrier rib pattern was obtained by the same method except that the width (terminal width) in the range of 0.8 mm was changed to 80 ⁇ m. In other words, the end width of this photomask is 1.6 times the standard width.
- the obtained partition wall pattern was subjected to defect inspection with an image inspection apparatus. As a result of the inspection, the obtained partition wall pattern was free from defects such as disconnection, chipping, thickening and short circuit.
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Abstract
Description
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005800292846A CN101010637B (zh) | 2004-08-30 | 2005-08-26 | 显示器用部件的曝光方法和等离子体显示器用部件的制造方法 |
| US11/661,178 US8263319B2 (en) | 2004-08-30 | 2005-08-26 | Display member exposing method and plasma display member manufacturing method |
| JP2006532606A JP4333741B2 (ja) | 2004-08-30 | 2005-08-26 | ディスプレイ用部材の露光方法およびプラズマディスプレイ用部材の製造方法 |
| KR1020077001082A KR101128184B1 (ko) | 2004-08-30 | 2005-08-26 | 디스플레이용 부재의 노광방법 및 플라즈마 디스플레이용부재의 제조방법 |
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| JP2004-250103 | 2004-08-30 | ||
| JP2004250103 | 2004-08-30 |
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| WO2006025266A1 true WO2006025266A1 (ja) | 2006-03-09 |
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| PCT/JP2005/015503 Ceased WO2006025266A1 (ja) | 2004-08-30 | 2005-08-26 | ディスプレイ用部材の露光方法およびプラズマディスプレイ用部材の製造方法 |
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| Country | Link |
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| US (1) | US8263319B2 (ja) |
| JP (1) | JP4333741B2 (ja) |
| KR (1) | KR101128184B1 (ja) |
| CN (1) | CN101010637B (ja) |
| TW (1) | TW200613930A (ja) |
| WO (1) | WO2006025266A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010276998A (ja) * | 2009-05-29 | 2010-12-09 | Fujifilm Corp | パターン露光方法、導電膜の製造方法及び導電膜 |
| US8013528B2 (en) | 2008-01-30 | 2011-09-06 | Toray Industries, Inc. | Plasma display member and method for manufacturing plasma display member |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8154203B2 (en) * | 2006-07-31 | 2012-04-10 | Panasonic Corporation | Plasma display rear panel and its manufacturing method |
| CN101598900B (zh) * | 2008-06-05 | 2012-03-07 | 四川虹欧显示器件有限公司 | 等离子显示屏的曝光方法 |
| JP2011222443A (ja) * | 2010-04-14 | 2011-11-04 | Canon Inc | 画像表示装置、およびリブ形成方法 |
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| JPS57186329A (en) * | 1981-05-12 | 1982-11-16 | Toshiba Corp | Exposing method |
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| JPH0687393B2 (ja) | 1988-12-19 | 1994-11-02 | 株式会社住友金属セラミックス | プラズマディスプレイパネル障壁の製造方法 |
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| JP3877449B2 (ja) | 1998-10-07 | 2007-02-07 | ナミックス株式会社 | 蛍光体パターンの形成方法 |
| EP1353217A1 (en) * | 2002-03-29 | 2003-10-15 | JSR Corporation | Optical alignment method and liquid crystal display element |
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- 2005-08-26 CN CN2005800292846A patent/CN101010637B/zh not_active Expired - Fee Related
- 2005-08-26 US US11/661,178 patent/US8263319B2/en not_active Expired - Fee Related
- 2005-08-26 WO PCT/JP2005/015503 patent/WO2006025266A1/ja not_active Ceased
- 2005-08-26 KR KR1020077001082A patent/KR101128184B1/ko not_active Expired - Fee Related
- 2005-08-26 JP JP2006532606A patent/JP4333741B2/ja not_active Expired - Fee Related
- 2005-08-29 TW TW094129436A patent/TW200613930A/zh unknown
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| JPS4852479A (ja) * | 1971-11-05 | 1973-07-23 | ||
| JPS56162747A (en) * | 1980-05-21 | 1981-12-14 | Oki Electric Ind Co Ltd | Mask for exposure to light |
| JPS57186329A (en) * | 1981-05-12 | 1982-11-16 | Toshiba Corp | Exposing method |
| JPH06314542A (ja) * | 1993-04-30 | 1994-11-08 | Dainippon Printing Co Ltd | プラズマディスプレイパネルの障壁形成方法 |
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| US8013528B2 (en) | 2008-01-30 | 2011-09-06 | Toray Industries, Inc. | Plasma display member and method for manufacturing plasma display member |
| JP2010276998A (ja) * | 2009-05-29 | 2010-12-09 | Fujifilm Corp | パターン露光方法、導電膜の製造方法及び導電膜 |
| US8852728B2 (en) | 2009-05-29 | 2014-10-07 | Fujifilm Corporation | Conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101128184B1 (ko) | 2012-03-23 |
| TW200613930A (en) | 2006-05-01 |
| JPWO2006025266A1 (ja) | 2008-05-08 |
| CN101010637B (zh) | 2010-07-28 |
| US8263319B2 (en) | 2012-09-11 |
| KR20070057770A (ko) | 2007-06-07 |
| JP4333741B2 (ja) | 2009-09-16 |
| CN101010637A (zh) | 2007-08-01 |
| US20090142703A1 (en) | 2009-06-04 |
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