WO2006017136A3 - Maitrise de l'uniformite du plasma par la courbure du diffuseur - Google Patents

Maitrise de l'uniformite du plasma par la courbure du diffuseur Download PDF

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Publication number
WO2006017136A3
WO2006017136A3 PCT/US2005/024165 US2005024165W WO2006017136A3 WO 2006017136 A3 WO2006017136 A3 WO 2006017136A3 US 2005024165 W US2005024165 W US 2005024165W WO 2006017136 A3 WO2006017136 A3 WO 2006017136A3
Authority
WO
WIPO (PCT)
Prior art keywords
diffuser
diffuser plate
curvature
gas
density
Prior art date
Application number
PCT/US2005/024165
Other languages
English (en)
Other versions
WO2006017136A2 (fr
Inventor
Soo Young Choi
Beom Soo Park
John M White
Robin L Tiner
Original Assignee
Applied Materials Inc
Soo Young Choi
Beom Soo Park
John M White
Robin L Tiner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/962,936 external-priority patent/US20050233092A1/en
Priority claimed from US11/021,416 external-priority patent/US7785672B2/en
Priority claimed from US11/143,506 external-priority patent/US20060005771A1/en
Application filed by Applied Materials Inc, Soo Young Choi, Beom Soo Park, John M White, Robin L Tiner filed Critical Applied Materials Inc
Priority to JP2007521509A priority Critical patent/JP2008506273A/ja
Priority to EP05764564A priority patent/EP1789605A2/fr
Publication of WO2006017136A2 publication Critical patent/WO2006017136A2/fr
Publication of WO2006017136A3 publication Critical patent/WO2006017136A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Des modes de réalisation de l'invention concernent un diffuseur de gaz monté dans une chambre de traitement. Dans un premier mode de réalisation, un ensemble de distribution de gaz pour une chambre de traitement au plasma comprend un diffuseur pourvu de passages de gaz qui longent ses côtés amont et aval ainsi que des cavités de cathodes creuses sur le côté aval des passages de gaz. Le côté aval du diffuseur présente une courbure qui améliore l'uniformité d'épaisseur et l'uniformité des propriétés des films minces déposés par PECVD, en particulier les SiN ainsi que les films de silicium amorphe. De préférence, la courbure est formée par un arc de cercle ou d'ellipse, dont le sommet se situe au point central du diffuseur. Dans un premier mode de réalisation, la densité volumique de la cavité de cathode creuse, la densité de l'aire spécifique, ou la densité de la cavité du diffuseur, augmente du centre du diffuseur au bord extérieur. Par ailleurs, l'invention concerne des procédés de fabrication de ce diffuseur.
PCT/US2005/024165 2004-07-12 2005-07-07 Maitrise de l'uniformite du plasma par la courbure du diffuseur WO2006017136A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007521509A JP2008506273A (ja) 2004-07-12 2005-07-07 ガス拡散器湾曲によるプラズマ均一性の制御
EP05764564A EP1789605A2 (fr) 2004-07-12 2005-07-07 Maitrise de l'uniformite du plasma par la courbure du diffuseur

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US58717304P 2004-07-12 2004-07-12
US60/587,173 2004-07-12
US10/962,936 2004-10-12
US10/962,936 US20050233092A1 (en) 2004-04-20 2004-10-12 Method of controlling the uniformity of PECVD-deposited thin films
US11/021,416 US7785672B2 (en) 2004-04-20 2004-12-22 Method of controlling the film properties of PECVD-deposited thin films
US11/021,416 2004-12-22
US11/143,506 US20060005771A1 (en) 2004-07-12 2005-06-02 Apparatus and method of shaping profiles of large-area PECVD electrodes
US11/143,506 2005-06-02

Publications (2)

Publication Number Publication Date
WO2006017136A2 WO2006017136A2 (fr) 2006-02-16
WO2006017136A3 true WO2006017136A3 (fr) 2006-09-21

Family

ID=35541937

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/024165 WO2006017136A2 (fr) 2004-07-12 2005-07-07 Maitrise de l'uniformite du plasma par la courbure du diffuseur

Country Status (5)

Country Link
EP (1) EP1789605A2 (fr)
JP (1) JP2008506273A (fr)
KR (1) KR20070039931A (fr)
CN (1) CN101871099B (fr)
WO (1) WO2006017136A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
CN101410549A (zh) * 2007-01-29 2009-04-15 住友电气工业株式会社 微波等离子体cvd系统
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
JP5713842B2 (ja) * 2011-08-24 2015-05-07 富士フイルム株式会社 成膜装置
CN103266310B (zh) * 2013-05-24 2015-05-20 上海和辉光电有限公司 分散板及具有该分散板的镀膜装置
TWM478028U (zh) * 2013-07-29 2014-05-11 Applied Materials Inc 用於一沉積腔體之擴散件
US10358722B2 (en) * 2015-12-14 2019-07-23 Lam Research Corporation Showerhead assembly
US20190006154A1 (en) * 2017-06-28 2019-01-03 Chaolin Hu Toroidal Plasma Chamber
WO2019109207A1 (fr) * 2017-12-04 2019-06-13 Applied Materials, Inc. Tête de distribution partiellement anodisée

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US20030089314A1 (en) * 1999-03-18 2003-05-15 Nobuo Matsuki Plasma CVD film-forming device
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
WO2001075188A2 (fr) * 2000-03-30 2001-10-11 Tokyo Electron Limited Procede et appareil permettant une injection de gaz reglable dans un systeme de traitement a plasma

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US20030089314A1 (en) * 1999-03-18 2003-05-15 Nobuo Matsuki Plasma CVD film-forming device
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 174 (C - 589) 25 April 1989 (1989-04-25) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 414 (C - 635) 13 September 1989 (1989-09-13) *

Also Published As

Publication number Publication date
CN101871099B (zh) 2013-09-25
CN101871099A (zh) 2010-10-27
WO2006017136A2 (fr) 2006-02-16
KR20070039931A (ko) 2007-04-13
EP1789605A2 (fr) 2007-05-30
JP2008506273A (ja) 2008-02-28

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