CN101871099B - 通过气体分散器弯曲性的等离子体均匀度控制 - Google Patents

通过气体分散器弯曲性的等离子体均匀度控制 Download PDF

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Publication number
CN101871099B
CN101871099B CN2009102222852A CN200910222285A CN101871099B CN 101871099 B CN101871099 B CN 101871099B CN 2009102222852 A CN2009102222852 A CN 2009102222852A CN 200910222285 A CN200910222285 A CN 200910222285A CN 101871099 B CN101871099 B CN 101871099B
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China
Prior art keywords
decollator
plate
hollow cathode
cave
gas
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CN2009102222852A
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English (en)
Chinese (zh)
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CN101871099A (zh
Inventor
崔寿永
朴范秀
J·M·怀特
R·L·蒂纳
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US10/962,936 external-priority patent/US20050233092A1/en
Priority claimed from US11/021,416 external-priority patent/US7785672B2/en
Priority claimed from US11/143,506 external-priority patent/US20060005771A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101871099A publication Critical patent/CN101871099A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN2009102222852A 2004-07-12 2005-07-07 通过气体分散器弯曲性的等离子体均匀度控制 Active CN101871099B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US58717304P 2004-07-12 2004-07-12
US60/587,173 2004-07-12
US10/962,936 US20050233092A1 (en) 2004-04-20 2004-10-12 Method of controlling the uniformity of PECVD-deposited thin films
US10/962,936 2004-10-12
US11/021,416 2004-12-22
US11/021,416 US7785672B2 (en) 2004-04-20 2004-12-22 Method of controlling the film properties of PECVD-deposited thin films
US11/143,506 2005-06-02
US11/143,506 US20060005771A1 (en) 2004-07-12 2005-06-02 Apparatus and method of shaping profiles of large-area PECVD electrodes

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200580022984A Division CN100575547C (zh) 2004-07-12 2005-07-07 通过气体分散器的等离子体均匀度控制

Publications (2)

Publication Number Publication Date
CN101871099A CN101871099A (zh) 2010-10-27
CN101871099B true CN101871099B (zh) 2013-09-25

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Family Applications (1)

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CN2009102222852A Active CN101871099B (zh) 2004-07-12 2005-07-07 通过气体分散器弯曲性的等离子体均匀度控制

Country Status (5)

Country Link
EP (1) EP1789605A2 (fr)
JP (1) JP2008506273A (fr)
KR (1) KR20070039931A (fr)
CN (1) CN101871099B (fr)
WO (1) WO2006017136A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
CN101410549A (zh) * 2007-01-29 2009-04-15 住友电气工业株式会社 微波等离子体cvd系统
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
JP5713842B2 (ja) * 2011-08-24 2015-05-07 富士フイルム株式会社 成膜装置
CN103266310B (zh) * 2013-05-24 2015-05-20 上海和辉光电有限公司 分散板及具有该分散板的镀膜装置
TWM478028U (zh) * 2013-07-29 2014-05-11 Applied Materials Inc 用於一沉積腔體之擴散件
US10358722B2 (en) * 2015-12-14 2019-07-23 Lam Research Corporation Showerhead assembly
US20190006154A1 (en) * 2017-06-28 2019-01-03 Chaolin Hu Toroidal Plasma Chamber
KR20200094781A (ko) * 2017-12-04 2020-08-07 어플라이드 머티어리얼스, 인코포레이티드 부분적으로 양극산화된 샤워헤드

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP3595853B2 (ja) * 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
AU2001247685A1 (en) * 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly

Also Published As

Publication number Publication date
CN101871099A (zh) 2010-10-27
KR20070039931A (ko) 2007-04-13
WO2006017136A3 (fr) 2006-09-21
EP1789605A2 (fr) 2007-05-30
WO2006017136A2 (fr) 2006-02-16
JP2008506273A (ja) 2008-02-28

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