TWI374197B - Plasma uniformity control by gas diffuser curvature - Google Patents

Description

At 1374197, film thickness and uniformity of properties for chemical vapor deposition of large areas of plasma will become more problematic. Examples of uniformity issues noted include higher deposition rates and, for some high deposition rates, tantalum nitride and a-Si film layers, a more compressible film layer in the central region of the large substrate. The thickness uniformity in the substrate appears to be "dome-like" or "central thickness", and the film layer is thicker in the central region than in the edge region. Larger substrates have a worse center thickness uniformity problem.

Therefore, there is an improvement in the need for a gas dispersion plate assembly that can improve the uniformity of film deposition thickness and film properties for a film layer (especially tantalum nitride and α-Si), wherein the film layer is It is deposited on a large substrate in a PECVD chamber. [Summary of the Invention]

The present invention provides an embodiment of a gas dispersing plate for dispersing a gas in a process chamber. In one embodiment, a gas dispersion plate assembly for a plasma processing chamber includes at least one diffuser plate having an upstream side and a downstream side, upstream and downstream of the diffuser plate. a gas passage between the sides and a hollow cathode cavity on the downstream side of the gas passages. The downstream side of the diffuser plate has a bend to improve the thickness uniformity of the film layer deposited by PECVD and the uniformity of the film properties. In one aspect, the hollow cathode cavity bulk density, surface area density, or hollow cathode cavity density of the diffuser is increased from the center of the diffuser to the edge. In another aspect, the downstream side of the gas diffuser plate is divided into a plurality of concentric blocks, wherein the gas channels in each block are the same, and the gas channels in each block 10 1374197 The density, volume or surface area of the hollow cathode cavity is progressively increased from the center of the diffuser plate to the edge.

In another embodiment, a plasma processing chamber includes at least one diffuser plate having an upstream side, a downstream side, and a gas passage between the upstream side and the downstream side of the diffuser plate. And a hollow cathode cavity located on the downstream side of the gas passages. The downstream side of the diffuser plate has a bend to improve the thickness uniformity and film property uniformity of the film layer deposited by PECVD. In one aspect, the hollow cathode cavity bulk density of the diffuser, the hollow cathode cavity surface area density, or the hollow cathode cavity density is increased from the center of the diffuser to the edge. In another aspect, a method of fabricating a gas spreader for a plasma processing chamber includes at least: softening the diffuser plate by heating; bending the diffuser plate to a bend with a curved annealing fixture And the processing gas channel into the diffuser plate. In another aspect, a method of making a gas spreader for use in a plasma processing chamber includes at least processing a bend into a substantially flat diffuser plate and processing a gas passage into the diffuser plate.

In another aspect, a method of depositing a film layer on a substrate, the method comprising: placing a substrate in a process chamber having a gas diffuser plate, the gas diffuser plate having a bend , an upstream side and a downstream side, a gas passage between the upstream side and the downstream side of the diffuser plate, and a hollow cathode cavity located on a downstream side of the gas passages; flowing the process gas through the gas diffuser a plate facing the substrate supported on a substrate support; establishing a plasma between the diffuser plate and the substrate

CC 11 1374197 between the supports; and depositing a film layer on the substrate within the process chamber. In one aspect, the hollow cathode cavity volume density, hollow cathode cavity surface area density, or hollow cathode cavity density of the gas channel in the center of the diffuser plate is less than the same parameters of the gas channel at the edge of the diffuser plate. [Embodiment]

SUMMARY OF THE INVENTION The present invention generally provides a gas distribution assembly for providing gas delivery within a process chamber. The invention will now be described in terms of a plasma enhanced chemical vapor deposition system for processing large area substrates, such as plasma enhanced chemical vapor phase obtained from AKT, Applied Materials, Inc., Santa Clara, California, USA. Deposition (PEC VD) system. However, it must be understood that 'the invention can be applied to other structures (such as etching systems), other chemical vapor deposition systems, and other systems that require gas to be dispersed within the process chamber' including systems that process circular substrates. .

For tantalum nitride film layers, the problem of center thickness uniformity has been addressed by changing the size and/or distribution of the cathode cavities on the downstream surface of the PECVD gas diffuser plate. The cathode cavity enhances plasma ionization in the PECVD chamber. Since the thickness of the tantalum nitride film layer and the uniformity of the film properties are strongly dependent on the regional plasma density in the PECVD chamber, for large substrates, the depth of the hollow cathode cavity is changed on the surface of the diffuser plate, Diameter, surface area and/or density can eliminate center thickness uniformity issues. This technique is known as the hollow cathode gradient or HCG method and will be described in more detail below with reference to Figures 6A and 8. A complete description of the HCG method is provided by Choi et al. in July 20, 2004.

CC 12 1374197

Speed, 11000 watt RF plasma power, 2.7 Torr chamber pressure, and 340 °C (inner substrate heater) and 360 °C (outer substrate heater) substrate temperature. The PECVD components will be described in more detail in Figure 5, which includes a gas diffuser plate, a substrate support, and an electrode spacing. In addition to other helium-containing gases of SiH4, such as Si2H6, it can be used to deposit an a-Si film layer in a PECVD chamber. Referring again to Figure 2, despite the use of a gas diffuser plate incorporating HCG, the film thickness uniformity of the amorphous tantalum film layer still has a central thickness effect and poor uniformity at the edge of the substrate. Film properties. The substrate center region 203 of the film uniformity curve exhibits acceptable film properties and uniformity, while the edge regions 204 and 205 exhibit poor uniformity and film properties. It shows that HCG has an effect.

At narrower electrode spacings, the thickness uniformity of the amorphous tantalum film layer at the edges can be improved, but this can be offset by poor film uniformity at the center of the large substrate. Figures 3 and 4 show the thickness curves of an amorphous tantalum film layer on a 2200 mm wide glass substrate with electrode spacings of 0.650 inches and 0.550 inches, respectively. In Fig. 3, the film thickness curves 301 and 302 show that the uniformity of the substrate center region 303 is deteriorated, and the thickness uniformity of the edge regions 304 and 305 is slightly improved. Except for the narrower electrode spacing of 0.650 inches, the a-S i film layer measured for Figure 3 is deposited in the same way as the cx-Si film layer measured for Figure 2 In the PECVD chamber and under the same process conditions. Figure 4 is a graph showing the film thickness curves 401 and 402 of the a-Si film layer as shown in Figures 2 and 3 in the same process conditions except that the electrode spacing is 0.550 inches. Film thickness curves 401 and 402 show further uniformity of the central region 403.

14 1374197, and edge regions 404 and 405 significantly improve thickness uniformity. Therefore, the data shown in Figures 2, 3 and 4 indicate that the electrode spacing affects the α-Si film more strongly than the hollow cathode gradient effect.

As shown in Figures 2, 3 and 4, when the α-Si film layer is deposited on a large substrate, the film thickness uniformity problem is changed by using the HCG gas diffuser plate at different electrode spacings. Will be eliminated. In general, a narrower electrode spacing improves edge thickness uniformity and a wider spacing improves t-thickness uniformity. However, the absence of a single electrode spacing allows for acceptable thickness uniformity in the center and edge regions of the cx-Si film layer under these process conditions.

In the case of an HCG gas diffuser plate, in addition to the electrode spacing, other process parameters can be adjusted to achieve acceptable thickness uniformity of the a-Si film layer. However, one of the serious drawbacks of this approach is the need to rely on a small process window to produce an acceptable alpha-Si film layer. A process window is a range of variations for all process parameters (such as substrate temperature or gas flow rate), which still produces acceptable results. With a narrow process window, small (and sometimes undetectable) changes in process parameters can cause large changes in the final product. These variations can be random fluctuations that are always present during the substrate process, or a gradual, long-term trend over time as the process chamber components wear out or the measurement device loses accuracy. This means that the same process parameter settings for producing a acceptable film layer with a PECVD chamber may not be applied to a nominally identical PECVD chamber, and the process parameters for each chamber may need to be fine tuned. Alternatively, when the process parameters must be manipulated in a small process window, a PECVD chamber that is depositing an acceptable film layer on the substrate may begin to deposit an unacceptable film layer over time. Therefore, this method is not practical for a large amount of processing of the substrate. Therefore, the use of a gas diffuser plate having only HCG cannot solve the problem of thickness uniformity of the tantalum nitride and a_Si film deposited on a large substrate. Exemplary PECVD Chamber Figure 5 is a cross-sectional view of an electro-convex-enhanced chemical vapor deposition system 500 that may benefit from the present invention. The PECVD system .500 was obtained from AiCT, Division of Applied Materials, Inc., Santa Clara, California. System 500 generally includes a process chamber 502 that is consuming a gas source 504. The process chamber 502 has a wall 506 and a bottom 5〇8 that define a process space 512. The process space 512 is typically accessible via a port (not shown) in the wall 506 that facilitates the movement of the substrate 540 into and out of the process chamber 5〇2. The wall and bottom portion 508 can be formed from a single block or other process compatible material. The wall 506 supports a cap assembly 51A, which includes a cartridge suction chamber 5丨4, which barrel suction chamber 514 is used to process space = to: Component, not shown). ^ Excavation* (not shown) is disposed in the bottom plate of the process chamber 502, and the process space 512 does not need to be - the bottom of the chamber 514 is a temperature-controlled base β ± β soil support assembly 538 It is inside the process chamber 502. The support member 4 is placed in the assembly member 5 3 8 in the system 5, such as „± 认 玻璃 基材 基材 540 。 。 。 支撑 支撑 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄 廿襄The aluminum body 524, aluminum too, and the member 538 at least the station body 524 surrounds the s small coffee + heat 532. The heater 532 is disposed in the support member 538 embedded in the support member (for example, electricity (§ A cover assembly 510 provides an upper limit to the process space 512. In one embodiment, the cover assembly 510 is made of aluminum. The cover assembly 510 includes a cartridge suction formed therein. The chamber 514 is coupled to an external cylinder suction system (not shown). The cylinder suction chamber 5 1 4 is used for self-contained space 5 1 2 evenly. The gas and process by-products are introduced and discharged into the process chamber 502.

The lid assembly 510 typically includes an input port 580 through which a process gas supplied by a gas source 504 can be introduced through the input port 580 into the process chamber 502. The input port 580 is also coupled to a cleaning source 5 8 2 . The cleaning source 5 82 typically provides a cleaning reagent (e.g., dissociated fluorine) that is introduced into the processing chamber 502 to remove deposition by-products from the self-contained chamber hardware (including the gas dispersion plate assembly 5 1 8). Membrane layer.

The gas dispersion plate assembly 5 1 8 is coupled to one of the inner sides of the cover assembly 5 1 0 5 20 . The shape of the gas dispersion plate assembly 518 is typically constructed to conform to the periphery of the glass substrate, such as being polygonal for a large area planar panel substrate and circular for a wafer. The gas dispersion plate assembly 518 includes a perforated region 516 through which the process supplied by the gas source 504 and other gas systems are conveyed through the perforated region 516 to the process space 5 1 2 . The perforated region 516 of the gas dispersion plate assembly 518 is configured to provide a uniformly distributed gas that enters the process chamber 502 through the gas dispersion plate assembly 518. A gas dispersing plate which is beneficial to the present invention is described in U.S. Patent Application Serial No. 09/922,219, filed on Aug. 8, 2001, by Keller et al. US Patent Application No. 1 0/1 40,324, Blonigan et al., US Patent Application No. 1 0/33 7,483, filed on January 1, 2011 U.S. Patent No. 6,477,980, to the name of U.S. Patent Application Serial No. 10/417,592, filed Apr. t, which is incorporated herein by reference.

The gas dispersion plate assembly 518 typically includes a diffuser plate (or dispersing plate) 558' that is suspended from a suspension plate 560»the diffuser plate 558 and the suspension plate 560 or may comprise a single member. A plurality of gas passages 562 are formed through the diffuser plate 558 to allow a predetermined gas distribution to pass through the gas dispersion plate assembly 518 and into the process space 512. A chamber 564 is formed between the suspension plate 560, the diffuser plate 558, and the inner surface 520 of the lid assembly 510. The chamber 564 allows gas to flow through the lid assembly 510 to evenly spread across the width of the diffuser plate 558. The ground is spread such that gas can be uniformly distributed over the central perforated region 516 and flow through the gas passage 562 in a uniformly distributed manner.

Disperser plate 558 * The ground is made of stainless steel, aluminum, nickel or other conductive materials. Disperser plate 558 can be cast, made of brass, cast, hot isostatically pressed, or sintered. In one embodiment, the diffuser plate is made of undecorated electroless aluminum. A non-electroplated aluminum surface for the diffuser plate 558 has been shown to reduce the formation of particulates thereon which will subsequently contaminate the substrate being processed in the PECVD system 500. In addition, when the diffuser plate 558 is not plated, its manufacturing cost can be reduced. A suitable aluminum plate surface for the diffuser plate 558 without decoration

(C 19 1374197 does not contain scratches and burrs on the body, is chemically cleaned to eliminate undesired contamination before use' and can be mechanically ground or electropolished. One can benefit from the non-plated aluminum dispersion of the present invention. The slab is described in commonly-assigned U.S. Patent No. 6,182, 603, filed on Jan. 13, 1998 by shang et al., entitled "Surface-Treated Shower Head For U Se I na S ubstrate P rocessing C Hamberj. Disperser board 5 5 8

The thickness is between about 0.8 inches and about 2.0 inches. Disperser plate 558 can be circular for semiconductor wafer fabrication, or polygonal (e.g., rectangular) for flat panel display fabrication.

The diffuser plate 558 is substantially flat and parallel to the substrate 540, and the distribution of the same gas passages 562 is uniform across the surface of the diffuser plate 558. These are standard practice in the art. The structure of such a diffuser 558 has provided a suitable gas flow and plasma density uniformity in the process space 512 to deposit a film on a substrate of less than 1200000 mm2. Therefore, when yttrium nitride, α-Si and other thin films are deposited on a substrate of less than 1 200 000 mm2 in a PECVD chamber, thickness uniformity and film property uniformity can only be changed by changing process parameters ( For example, process gas flow rate, paddle power, substrate temperature, and process chamber pressure are achieved on the deposited layer. However, the uniformity of the deposited film layer (especially tantalum nitride and a-S i ) has become more difficult to maintain as the size of the substrate increases. A planar diffuser plate 558 having a uniformly distributed gas passage 5 62 (which has a uniform size and shape) is generally not capable of depositing a layer of tantalum to a large area substrate of acceptable thickness and uniformity of film properties. Hollow Cathode Gradient 20 1374197 For PEC VD film layers, when deposited on a larger substrate (i.e., at least about 1000 mm X 1200 mm), the uniformity of film thickness and film properties is more difficult to maintain. For the tantalum nitride film layer, the thickness on the substrate will be "dome-shaped", and the film layer is thicker in the central region than the edge region. This effect is worse on larger substrates.

It has been shown that for a tantalum nitride film deposited on a substrate having a thickness greater than about 120,000 square meters in a PECVD chamber, film thickness and film property uniformity can be achieved by using a hollow cathode gradient (hollow cathode) Gradient) or HCG to improve. The HCG method is described below with reference to Figures 6A and 8 and the aforementioned U.S. Patent Application Serial No. 10/889,683, entitled "Plasma Uniformity Control By Gas Diffuser Hole Design". A gas dispersion plate 558 having HCG can improve the uniformity of the thickness of the tantalum nitride film layer and the properties of the film layer by changing the plasma distribution in the process space 512. This is because the film deposition by PECVD is essentially dependent on the source of the active plasma. Thus, a non-uniform plasma distribution of 512 in the process space can result in poor film uniformity on the substrate 540.

The dense chemically reactive electric enthalpy can be produced in the process space 512 of the PECVD system 500 due to the hollow cathode effect, which will be described herein with reference to Fig. 6. For the RF generation of a hollow cathode discharge of a negatively charged RF electrode 601, the driving force is to adjust the DC voltage Vs across the frequency of the electrical shielding or wall shielding 602a or 6〇2b at the RF electrode 6〇1, so-called Self-biased. Figure 6A shows the _rf hollow cathode and the electronic "e" oscillating movement between the repulsive electric fields 603a and 603b of the opposing space charge shields 602a and 602b. Space charge obscuration 6〇2 Wang and 21 1374197

The thickness of 602b is equal to "δ". The electron "e" is emitted from the cathode wall, in this case the RF electrode 601, which may be the wall of the gas passage 562 adjacent to the process space 512. Gas passage 562 and process space 512 are shown in Figures 5 and 8. Referring again to Figure 6A, the electron "e" is accelerated by the electric field 603a and is shielded by space charge 6 0 2 a. The electron "e'' oscillates along the inner space of the wall of the RF electrode 60 1 along the path 60 5 due to the relative space charge obscuring the repelling field of 60 2 a and 602 b. The electron "e" collides with the process gas The energy is lost and more ions are generated. The generated ions can be accelerated to the RF electrode 601, thereby enhancing the emission of secondary electrons, wherein the secondary electrons can generate additional ions. Overall, between the cathode walls The cavity enhances the ionization of electrons and gases. The frustoconical features in the cathode wall (for example, when the gas inlet diameter of the gas passage formed in the diffuser plate is smaller than the diameter of the gas outlet) will be better than the rounded wall Ionization of the gas is more efficient. An example of a frustoconical cathode cavity is described in more detail with reference to Figure 8. The potential Ez is produced due to the difference in ionization efficiency between the gas inlet and the gas outlet.

For the diffuser plate 558, the hollow cathode cavity is located on the downstream end of the gas passage 562 and adjacent to the process space 512. It has been shown that by varying the density and configuration of the walls of the cathode cavity or hollow cathode cavity of the gas channel 5 62, gas ionization can be altered to control the plasma density, and thus the deposited tantalum nitride. Film thickness and property uniformity of the film layer. The method and the result of demonstrating this phenomenon are described in the aforementioned referenced U.S. Patent Application Serial No. 10/889,683, entitled "Plasma Uniformity Control By Gas Diffuser Hole Design". An example of a hollow cathode cavity adjacent to the process space 22 1374197 512 is the second recess 812 of FIG. The hollow cathode effect occurs primarily in the frustoconical region of the second recess 812 facing the process space 512. The design of Figure 8 is only used as an example. The invention can be applied to other types of hollow cathode cavity designs. Other examples of hollow cathode cavity designs include, but are not limited to, the designs shown in Figures 6B-6G. The plasma ionization rate can be varied by varying the volume and/or surface area of the hollow cathode cavity (i.e., the second recess 812).

Figure 8 is a partial cross-sectional view of an exemplary diffuser plate 558, which may be derived from the present invention and is described in commonly assigned U.S. Patent Application Serial No. 10/417, filed on Apr. 16, 2003. , 5 92, entitled "Gas Distribution Plate Assembly for Large Area Plasma

Enhanced Chemical Vapor Deposition j, which is incorporated herein by reference.

The diffuser plate 558 includes a first or upstream side 802 facing the cap assembly 510 and a second or downstream side 8〇4β opposite the facing support assembly 528. Each gas passage 562 is a first recess As defined by the aperture 810, an aperture 814 couples the first recess 810 to the second recess 812 which combine to form a fluid path through the gas dispersion plate 558. The first recess 810 extends from the upstream side 8〇2 of the gas dispersing plate 5W by a first depth 830 to a bottom 818. The bottom 818 of the first recess 810 can be tapered 'beveled, chamfered or rounded' to reduce flow restriction as the gas flows into the opening 8丨4 from the first recess. The first recess 810 typically has a diameter of from about 〇93 to about 0.218 inches, and in one embodiment is about 156. The first recess 812 is formed in the diffuser plate 558 and is downstream by the side 23 1374197

(or end) 8 04 extends approximately 1 1 10 inches to a depth of approximately 2.0 inches 8 3 2 . Preferably, the depth 8 3 2 is between about 0 · 1 inch and about 1 · 0 inches. The second recessed hole 8 12 has an opening diameter of 8 3 6 which is substantially between about 0.1 inch and about 1.0 inch, and can be in the shape of an angle of between about 10 degrees and about 50 degrees. Expand. Preferably, the opening diameter 836 is between about 0.1 inches and about 0.5 inches, and the flare angle 816 is between about 20 degrees and about 40 degrees. The surface area of the second recess 812 is between about 0.05 square inches to about 10 square inches, and preferably between about 0.05 square feet and about 5 square inches. The diameter of the second recessed hole 8 12 means the diameter intersecting the downstream surface 804. An example of a diffuser plate for processing a 1870 mm X 2200 mm substrate has a diameter of 0.302 inches and a la. The octagonal angle 816 is about 22 degrees of the second recess 812. The distance between the rims 8 2 2 of the adjacent second recessed holes 812 is between about 0 inches and about 0.6 inches, preferably between about 〇 吋 and about 〇. 4 inches. Between 吋. The diameter of the first recessed hole 810 is usually, but not limited to, at least equal to or smaller than the diameter of the second recessed hole 821. The bottom 820 of the second recess 812 can be tapered, beveled, chamfered or rounded to reduce the pressure loss of gas flowing out of the opening 8 1 4 and into the second recess 8 1 2 . Moreover, because the vicinity of the opening 814 to the downstream side 804 can be used to reduce the exposed surface area of the second recess 812 and the downstream side 804 facing the substrate, the area of the downstream of the diffuser plate 558 exposed to fluorine can be reduced, thereby reducing occurrences. Fluorine contamination of the deposited film layer, where fluorine is provided during chamber cleaning. The opening 814 is generally coupled to the bottom 818 of the first recess 810 and the bottom 820 of the second recess 812. The opening 814 has substantially 24 1374197 of between about 0.01 inches and about 0.3 inches (preferably about 0.01 to about 0.1 inch).

The diameter, and typically has a length of from about 〇2. 02 inches to about 1.00 inches (preferably from about 0.02 inches to about 0.5 inches). The length 834 and diameter (or other geometrical attributes) of the opening 814 are the primary source of back pressure in the chamber 564 which promotes uniform distribution of gas on the upstream side 802 of the gas dispersion plate 558. The opening 814 is typically constructed to be uniform between the plurality of gas passages 562; however, the restriction through the opening 8 14 can be constructed to be different between the gas passages 562 to facilitate More gas passes through a region relative to other regions of the gas dispersion plate 5 58 . For example, the opening 8 1 4 may have a larger diameter and/or a shorter length in the gas passages 562 of the gas dispersion plate 558, adjacent to the wall 506 of the process chamber 502, so that more gas will flow. The perforated region 516 is passed to increase the deposition rate around the glass substrate. The thickness of the diffuser plate is between about 0.8 inches to about 3 _0 inches, preferably between about 0. 8 inches to about 2.0 inches.

The volume of the second recess (or hollow cathode cavity) 812 can be changed by changing the diameter "D" (or the opening diameter 836 in Fig. 8), the depth "d" (or the length 832 in Fig. 8) and the horn. The angle "oc" (or the flare angle 816 in Fig. 8) is changed as shown in Fig. 7. Changing the diameter, depth and/or flare angle also changes the surface area of the second recess 8 1 2 . It is believed that higher plasma density may be responsible for the higher deposition rate at the center of substrate 540 (see Figure 5). By reducing the depth to the center of the diffuser plate to the center, the diameter, the flare angle, or a combination of these three parameters, the plasma density in the central region of the substrate can be reduced to improve film thickness and film properties. Uniformity. The method and results showing this phenomenon are described in the aforementioned U.S. Patent Application Serial No. 10/889,683, the disclosure of which is incorporated herein by reference. Blocks can be square, rectangular or circular. From 1 to block N, the size of the hollow cathode cavity six (volume and/or surface area is gradually increased. This increase can be achieved by increasing the diameter of the hollow cathode cavity, the angle of the octagonal shape, or a combination of these parameters. The increase in the diameter and/or length of the hollow cathode cavity by the edge of the diffuser plate does not need to be applicable to all of the second recessed holes 812 as long as the hollow cathode cavity size (body or surface area) per unit downstream of the diffuser plate surface area There is a sputum addition. For example, some of the second recesses may be kept the same throughout the diffuser plate, while the other second recesses have a progressive transition of the hollow cathode cavity size (volume and/or surface area). In one example, 'the second recess 812 has a progressive increase in the hollow cathode cavity sag and/or surface area, while some small hollow cathode C1 is located at the edge of the diffuser plate to further increase the per unit spreader. The overall hollow cathode cavity volume and/or surface color of the plate surface area is shown in Figure 9B, which is a bottom view of a diffuser plate. In another embodiment. Most of the hollow cathode cavities 6 are in the diffuser plate, and there are some larger hollow cavities C2' toward the edge of the diffuser plate as shown in Fig. 9C. Electropolymerization and process non-uniformity can be improved by progressively increasing the volume or surface area of the hollow cathode cavity from the center to the edge region of the diffuser plate. Another way to vary the thickness and uniformity of film deposition is to change the density of the diffuser holes on the diffuser plate while maintaining the spreader the same. The density of the diffuser holes is obtained by intersecting the downstream side block Μ, the long heart for the sale and the '8 1 2 812 plus. (The lower part of the body is in the lower part of the knee. In this case, it is also in the extremely dirty area. It is made by the hole 27 804 1374197

The total surface area of the holes in the recess 812 is calculated by dividing the total surface area below the diffuser plate. The density of the diffuser holes can vary from about 100%, and preferably from about 30% to about 100%. For the "dome" or central thickness of the tantalum nitride film layer, the diffuser should be lowered (relative to the outer region) in the central region to reduce the plasma density. As described above with respect to bulk density and surface area, the cathode chamber density should be smooth from the inner region to the outer region to ensure consistent and smooth deposition and film property plots showing diffuser hole density from the center (region A ) is as low as the domain B) is a high progressive change. The density of the diffuser in the central region reduces the plasma density in the central region and reduces the problem of the tantalum nitride film. The arrangement of the diffuser holes in Figure 9D is only the increasing hole density from the center to the edge. The invention is applicable to the hole configuration and pattern of the device. The density change concept can also be combined with scatter variation to improve center-to-edge uniformity. When the gas level is changed to achieve plasma uniformity, the hollow cathode chamber can be spaced more than 0.6 inches apart. Gas Disperser with Distortion As with the discussion of Figures 2, 3 and 4 above, a hollow cathode gradient gas diffuser plate cannot eliminate the problem of film thickness uniformity when sinking on a large substrate. This is a problem with respect to nitrogen uniformity, which can be eliminated for substrates having greater than 1 200,000 mm2 using a gas diffuser plate with HCG. From the diagram of Fig. 4, it can be seen that 10% change of the amorphous side 804 from the PEC VD deposition in order to reduce the density of the holes and the density of the internal regions is progressive and linear. The 9D-edge (the lower circle of the hole is used to demonstrate the use of the α-Si film of the dense downstream end of any diffuser hole to make the ruthenium film layer by making ί 2, 3 and film The thickness of the layer of 28 1374197 degrees is strongly influenced by the electrode spacing. Changing the electrode spacing from 0.800 inches to 0.550 inches changes the center of the curve from the center of the layer with good film properties to the edge thickness and the difference between the centers. Film properties. Referring to Figures 5 and 8, the electrode spacing is defined as the distance between the downstream side 804 of the diffuser plate 558 and the substrate 540. For the alpha-Si film layer on a large substrate, it is believed At the time of substrate processing, the plasma density increases toward the center of the PECVD chamber for larger electrode spacing, thus changing the film thickness and film properties.

Since an amorphous tantalum film layer is formed at a narrower electrode spacing of the PECVD chamber t and has better properties at the edge of the substrate, and a relatively wide electrode spacing forms a film layer and is preferred at the center of the substrate. The nature of the diffuser plate is therefore provided by a combination of two spacing benefits. This is achieved by incorporating a wider and narrower spacing into the electrode itself, i.e., the electrode is adapted to provide a wider electrode in the central region of the substrate and a narrower electrode at the edge of the substrate. Thus, a substrate greater than 120000 mm2 can be deposited with an amorphous tantalum film layer having an acceptable thickness and uniformity of film properties throughout the substrate. This is by bending the diffuser plate/electrode on the downstream or process space side, which is not substantially flat and parallel to the substrate being processed. By incorporating a wider and narrower spacing from the electrode itself, the process window of α-Si can be significantly improved. Figure 10 is a cross-sectional view showing an embodiment of a flexible gas diffuser plate 1001 that can be adapted for use in a PECVD chamber. The gas passage 56 is not shown in the figure for the sake of simplicity. The downstream side 804 of the diffuser plate 1001 has a bend, and in this embodiment, the upstream side 802 of the diffuser plate 1001 is substantially flat. 3 people scattered on the board 1 〇〇 ι + side 802 can also have the right one hanging A g υυΐ upstream, there is flexibility, for example when the spreader 1 〇〇 1 is # with a bending annealing fixed strain When the pieces are formed, they will be described in the following 12th and Uth drawings. The figure also shows the maximum displacement between the surface of the downstream side 8〇'" and the imaginary flat downstream side. The surface is - as described in 刖, the base γ is prepared to improve the uniformity of the tantalum nitride layer, to the cathode Gradient, there is a singular sound force > 2 1...: hollow cathode cavity on the surface of the cloth

Eight volumes up to the degree 'the density of the hollow cathode surface area, and / or the progressive density of the cavity density & This avoids the non-uniformity of the tantalum nitride film layer due to the sudden change of the plasma density in the process space, wherein the change is caused by a too large hollow cathode gradient. It is believed that the same principle is also applied to improve the film thickness and film property uniformity of an amorphous tantalum film layer via an electrode/disperser plate having - in the substrate The electrode spacing changes above. Thus, the transition from a narrow spaced area above the edge of the substrate to a slightly wider spaced area above the center of the substrate is preferably smooth and progressive. Therefore, the downstream side 804 of the diffuser 1 〇〇 1 is preferably substantially concave, that is, the edge is relatively close to the substrate and smoothly transitions to a high point or apex above the center of the substrate 1 〇〇 5. The curvature of the downstream side 804 is substantially an arc having a vertex 1 005 that is approximately above the center point of the substrate. The vertex 1 〇 〇 5 defines the maximum displacement between the curved surface of the downstream side 804 and the surface of the imaginary flat downstream side 804a, as shown in Fig. 1. In a preferred embodiment, the arc has a curvature corresponding to a segment of a circle or ellipse, as shown in Figure 1. This ensures a smooth transition of the electrode spacing from the edge of the diffuser to the center' and % 30 1374197 allows the shape to be easily quantified. In other embodiments, a description will be made under bending;: 804 different methods may be used. In the -state, the one-line segment is from the description arc, as shown in Figure 10A. In this aspect, 5 is still substantially in the substrate... on the dispersion:,: Borrow: increased from the edge of the spreader to the center. In other aspects +, the arc can be described in addition to other mathematical functions of lines, circles or ellipses.

Secondary, sinusoidal, hyperbolic or other geometric functions, for example, at all and

The pattern consists of a phase apex 1 〇〇 5 which is substantially above the center point of the substrate 4 is increased from the edge of the diffuser to the center. In the other configuration, the entire surface of the downstream side 8〇4 does not have a one-curve~ as shown in Fig. 10B. The downstream side 8〇4 of the diffuser 1〇〇3 includes a region 1057 that is plain and flat on the edge of the diffuser 1003. For other configurations of the present invention, the curved section 1〇〇7& of the downstream side 8〇4 can be described by a line, an ellipse or one of the other mathematical functions described above. As in the previous 4, the apex 1005 is substantially above the center point of the substrate and the electrode spacing is increased from the edge of the diffuser to the center. The magnitude of the maximum displacement between the surface of the face curved downstream side 804 and the surface of an imaginary flat downstream side 8〇4a is relative to the diffuser plate i [size is small. In one aspect, the maximum displacement of 1〇〇4 is no more than about 3% of the characteristic length of the diffuser: preferably from about 〇1% to about 〇3%. To compare position 柙1004 with a rectangular or circular spreader, the feature length is considered to be "equivalent half". For a circular diffuser, the equivalent radius is equal to the radius of the diffuser. = in a square or rectangular diffuser 'equivalent radius is the diagonal of the two-way is 'in the case of 2200 mm X 1 870 mm spreader, the equivalent 31 1374197 radius is 1440 mm, and from the imaginary flat downstream side The maximum desired displacement 1004 of the curved downstream side 804 of 804a is about 4.3 mm.

It is worth noting that the flexibility of the downstream side 804 does not need to be precisely commensurate with one of the specific PECVD chambers that are beneficial for depositing the amorphous tantalum film layer; process adjustment of other process parameters is desirable regardless of the electrode shape, The film layer thickness of one film layer and the uniformity of the film layer properties are optimized. The advantage of using an electrode having a curved downstream side is that this significantly increases the process window for the a-S i film layer properties, making it easier to stroke a high quality amorphous tantalum film layer on a large substrate, and for mass production. More reliable. In some cases, a bendable electrode is needed to make it more likely to form an acceptable alpha-Si film layer.

In another embodiment, the wider electrode spacing in the central region of the disperser is achieved by the flexibility of the substrate support. In one aspect, as shown in Figure 10C, the diffuser plate 1010 has a substantially flat downstream side 804 and the substrate support 1011 has a bend with a maximum displacement of 1001. For the substrate support 1 0 1 1, the maximum displacement of 1 004 is defined as the distance between the substrate support curved surface 1 〇1 2 and an imaginary flat substrate support surface 1 0 1 2 a, such as the 1 0 Figure C shows. This aspect of the invention allows for a wide central region spacing and a narrow edge region spacing when using a substantially flat diffuser plate, as desired to be used to deposit an alpha-Si film layer in another aspect, Each of the diffuser plate and the substrate support may have flexibility, wherein the desired wide central region spacing and narrow edge region spacing may be achieved using the bendability. This aspect is shown in the 10D plot. The curved downstream surface 1016 of the diffuser plate 1013 has a more pronounced curvature than the substrate support 1014 32 1374197 ° due to the bending of the original L electrode.

When the diffuser plate and the substrate support both have a substrate support curved surface, the center 1018. Therefore, the wide center area interval and the narrow edge area interval desired by the 佑 佑 突 突 第 第 第 U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U : A thickness curve 1101 and 1102 of an amorphous dream film layer on a 2200 mm wide glass substrate for the curved diffuser plate of the second central leaf. When the film was deposited, the electrode spacing was 0.650 inches. The process conditions during deposition of the film were: 10000 Sccm SiH4 gas flow rate, 36000 sccm h2 gas flow rate, 10 watts of RF plasma power, 2.5 Torr chamber pressure, and 34 〇 <t (inner substrate heating) The temperature of the substrate to 36 (TC (outer substrate heater). The abscissa represents the position of each thickness measured along the 2200 mm length of the substrate. The unit is mm. The ordinate represents the amorphous enamel film The deposition rate of the layer deposited on the substrate, in units of human/min. The two data sets are plotted on the i i 1th, the data set 11 0 1 is a square, and the data set i丨02 is a diamond. The data set 丨丨〇j And 11 〇2 represents the deposition velocity curve measured along each diagonal of the substrate. The difference between the two curved greens is negligible, which means a strange thickness curve over the length of the spreader. The qualitative comparison of the film thickness curve of Figure 11 with respect to the curves of Figures 2, 3 and 4 shows a significant improvement in thickness uniformity when using a HCG spreader with flexibility on a substantially flat HCG spreader. The improvement is quantified in Table 1. Table 1 is deposited on the substrate. Thickness uniformity measurement of a-Si film layer (§: 33 1374197 Figure bending interval (inch) deposition speed (A/min) thickness uniformity (%) 1 5mm edge exclusion 20mm edge exclusion 2 no 0.800 1497 27.3 23.4 3 benefit 0.650 1583 25.0 2 1.0 4 benefit 0.550 1906 16.3 16.3 11 with 0.650 0889 12.1 8.1

The film deposited by a diffusing diffuser has a high deposition rate and improved uniformity with respect to the film deposited with a flat diffuser plate.

In one aspect, a PECVD gas diffuser has a curved downstream side and no hollow cathode gradient. The spreader improves film thickness uniformity and film property uniformity of the a-Si film layer deposited on substrates greater than about 120,000 square meters. In another aspect, a PECVD gas diffuser has a curved downstream side and a hollow cathode gradient. The spreader can be used to treat tantalum nitride or an α-Si film layer. This reduces the manufacturing cost of the PECVD chamber and increases chamber suitability, ie the chamber can be used to deposit tantalum nitride or a-Si The film layer does not need to change the gas diffuser plate. Manufacturing Method Disperser plates for processing substrates larger than approximately 1000 mm X 1200 mm are difficult to reproducibly manufacture. The desired shape and/or spreader to diffuser may vary significantly. This is especially true for diffuser plates that are not substantially flat (e.g., spreaders having a curved downstream surface). For a 34 1374197 film layer (eg α-Si)' because the thickness uniformity of the ruthenium layer and the uniformity of the film properties are strongly dependent on the electrode spacing, reducing the final bendability and hope in a diffuser plate after manufacture The change between shapes is very important. It is also important to reduce the variation between different (but nominally identical) chambers. The method is provided to allow a bend spreader for a PECVD chamber to be fabricated in a repeatable and cost effective manner.

In one embodiment, the desired bend on the downstream side of the gas diffuser plate is formed by a thermal process in which the diffuser plate is bent to conform to the shape of a curved annealed fastener. . The bend annealed fastener is a metal sheet that is machined to the desired bend and is used to bend many spreaders. Fig. 12 is a flow chart showing the use of a bend annealing fixture for the spreader annealing process 1 200 to bend a spreader plate to the desired bendability. The downstream side of the diffuser should be in contact with the annealing fixture.

At step 1202, the surface of the diffuser plate is covered by a protective material to avoid damage and contamination from the annealed weight. The protective material must be clean, quite flexible and resistant to heat. One example of a protective coating that can be used is an electroplated aluminum foil. At step 1203' the diffuser plate is loaded with a field weight that is required to plastically deform the spreader during the annealing process 4. The weight must be distributed onto the fabric so that the diffuser plate is completely zero during the annealing process and the shape of the kidney annealing fixture. In general, the weight should be 35 1374197 degrees and not more than 25 ° C per hour. At step 1207, the weight is removed after the diffuser plate reaches room temperature.

In one aspect, the diffuser plate does not have a hollow cathode gradient and the gas passage is substantially identical to the hollow cathode cavity. In another aspect, the diffuser plate has both a curved downstream surface and a hollow cathode gradient. In either case, the processing of the gas passage, which is significantly simplified for a substantially flat surface, is preferably performed prior to the annealing process. Although not substantially cost effective, the processing of the gas passages can also be performed after the annealing/bending process. The processing of the gas passages can be manual or numerically controlled (NC), but since there are many gas passages on the large spreader plate, it is preferred to use NC machining.

In another embodiment, the desired bendability on the downstream side of the gas diffuser plate is formed by machining to remove the desired material on the downstream side of the spreader using a milling or lathe well known in the art. Form metal removal process. In one aspect, the processing of the gas passage is performed after forming a curved surface. The processing of the gas passages can be manual or numerically controlled (NC), but since there are many gas passages on the large spreader plate, it is preferred to use NC machining. In another embodiment, the gas passage is first machined into the diffuser plate, then a first bend is machined into the downstream side of the gas diffuser plate, and finally the diffuser plate is annealed to a final bend. This embodiment provides a cost effective method for fabricating a gas distribution plate, wherein the gas distribution plate includes a hollow cathode gradient for uniform deposition of nitriding

37 1374197

The dream and a substantially concave curvature are used to uniformly deposit both cx-Si. Typically the same gas passage is machined into a substantially flat surface. This is more cost effective and reproducible in manufacturing a gas path of varying depth and diameter to a curved surface. The first bend is then machined into the downstream side of the gas diffuser plate using a metal removal process in the form of a milling or lathe well known in the art to create the desired hollow cathode cavity on the diffuser surface. Gradient; when more material is removed near the center of the diffuser plate, the size of the hollow cathode cavity created by the same gas channel is thus reduced. The gas diffuser plate is then formed with the final desired bendability by the aforementioned annealing/bending process. This final step is necessary because the flexibility required to establish the desired hollow cathode gradient is rarely the same as the bend desired for uniform deposition a - S i . While the invention has been shown and described with reference to the preferred embodiments of the invention, those skilled in the art can readily contemplate many other embodiments that still include variations of these teachings.

While the foregoing is directed to the embodiments of the present invention, the invention and the further embodiments of the invention may be devised without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The foregoing features of the present invention can be understood by reference to the embodiments of the invention. It is to be understood, however, that the appended claims

38 1374197 Figure 1 is a cross-sectional view showing the structure of a thin film transistor. Figure 2 is a graph showing the thickness of an amorphous tantalum film layer on a 2200 mm wide glass substrate. Figure 3 is a graph showing the thickness of another amorphous tantalum film layer on a 2 2 00 mm wide glass substrate. Figure 4 is a graph showing the thickness of another amorphous tantalum film layer on a 2200 mm wide glass substrate.

Figure 5 is a cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition system. Figure 6A shows an RF hollow cathode. Figure 6B-6G shows the different designs of the hollow cathode cavity. Figure 7 shows the definition of the diameter "D" of the opening, the depth "d" and the horn angle "α", wherein the opening extends downstream of a gas passage. Figure 8 is a cross-sectional view showing a gas diffuser plate. Figure 9A shows a diffuser plate with diffuser holes in a plurality of blocks.

Figure 9B shows a diffuser plate having a mixed hollow cathode cavity diameter with a hollow cathode cavity volume and/or surface area density in the inner region that is less than the hollow cathode cavity volume and/or surface area density in the outer region. Figure 9C shows a diffuser plate having a plurality of hollow cathode cavities and a plurality of larger hollow cathode cavities near the edge of the diffuser plate. The 9D tether shows a downstream side view of the diffuser plate with a modified diffuser hole density.

39 1374197 Figure 10 is a cross-sectional view showing an embodiment of a gas diffuser plate having flexibility. Figure 10A is a cross-sectional view showing an embodiment of a gas diffuser plate having flexibility. Figure 10B is a cross-sectional view showing an embodiment of a gas diffuser plate having flexibility.

Figure 10C is a cross-sectional view showing an embodiment of a gas diffuser plate having a substantially flat downstream side and a flexible substrate support. A 10D is a cross-sectional view of an embodiment of a gas diffuser plate having a curved downstream side and a flexible substrate support. Figure 11 is a graph showing the thickness profile of an amorphous tantalum film layer on a glass substrate using a diffuser plate having flexibility. Figure 12 is a flow chart showing the spreader annealing process for bending a diffuser plate to the desired bendability.

Figure 13 is an illustration of an exemplary weight configuration for annealing a 1.4 inch thick aluminum spreader plate. For the sake of clarity, the same reference numbers will be used herein to designate the same components in the drawings. [Main component symbol description] 101 substrate 103 gate dielectric layer 102 gate electrode layer 104 main body semiconductor layer 40 1374197 603a, 603b electric field 802 upstream side 804a downstream side 8 12 second indentation 816 angle 820 bottom 832 length 836 opening Diameter 882 Edge 1002 Disperser 1004 Displacement 1007 First Area 1010 Disperser Plate 1012 Substrate Support Bending Surface 1013 Disperser Plate 1015 Substrate Support Bending Surface 1017 Center Area Electrode Space 1101 Thickness Curve 1200 Disperser Annealing Process 1201 Placement Disperser on the surface of the annealed solid 1202 protection spreader to 1203 load the spreader with a weight 1204 to raise the temperature of the spreader 1205 when loaded with heavy loads » will be scattered

605 path 804 downstream side 810 first recess 814 opening 8 18 bottom 830 first depth 834 length 880 distance 1001 gas diffuser plate 1 003 diffuser 1005 apex 1007a curved section 1011 substrate support 1012a flat substrate support Surface 1014 Substrate support 1016 Downstream surface 1018 Edge area Electrode spacing 1102 Thickness curve on the part to avoid damage to the cloth

42 1374197 1206 Lowering the temperature of the diffuser 1207 Removing heavy objects

43

Claims (1)

1374197 Dijon owe "f 7 eve 5 from the project. /year/month amendment X. Patent application scope: 1. A gas dispersion plate assembly for a plasma processing chamber, comprising at least: a diffuser plate having an upstream side and a downstream side, wherein the downstream side It has a substantially concave curvature. 2. The gas dispersion plate assembly of claim 1, wherein the curvature of the downstream side of the diffuser plate is described by an arc. 3. The gas dispersion plate assembly of claim 2, wherein the arc has a curvature corresponding to a section of a circle or an ellipse. 4. The gas dispersion plate assembly of claim 1, wherein the diffuser plate is rectangular. 5. The gas dispersion plate assembly of claim 1, wherein the diffuser plate size is at least the projected area of the diffuser plate on a substrate. . 6. The gas dispersion plate assembly of claim 1, wherein the surface of the downstream side of the diffuser plate is an electroless unadorned aluminum. 7. The gas dispersion plate assembly of claim 1, wherein the maximum displacement of the surface on the downstream side of the diffuser plate is about 等效. Ο 1 of the equivalent radius of the plate of the diffuser 44 1374197. % to about 3%. 8. The gas dispersion plate assembly of claim 2, wherein the arc has a section having an exponential, quadratic, cubic, sinusoidal, or hyperbolic shape. 9. A gas dispersion plate assembly for a plasma processing chamber, comprising: at least one diffuser plate comprising: an upstream side having a substantially concave curvature; an unadorned non-plating a downstream surface; and a size at least a projected area of the diffuser plate on a substrate; and a maximum displacement of the downstream side of the diffuser plate, which is between about 0.1 mm and about 30 mm between" The gas dispersion plate assembly of claim 9, wherein the diffuser plate further comprises a plurality of cathode cavities in a central region and a plurality of cathode cavities in an edge region, wherein the cathode cavity The hole surface area, cathode cavity volume or cathode cavity density is increased from the central region to the edge region. 11. A gas dispersion plate assembly for a plasma processing chamber, the gas 45 1374197 dispersing plate assembly comprising at least one diffuser plate having an upstream side and a downstream side, wherein the downstream side has a a substantially concave shape, wherein the diffuser plate comprises at least: a first gas passage formed in a central region of the diffuser plate and in fluid communication with the upstream side and the downstream side, wherein the diffuser A gas passage contains at least: a first opening, fluidly connected to the upstream side; and a first hollow cathode cavity substantially adjacent to a downstream side of the gas passage, the first hollow cathode cavity comprising at least: a first cathode cavity a first cathode cavity volume; and a first cathode cavity opening conforming to the downstream side surface; a second gas passage formed in one of the edge regions of the diffuser plate and in fluid communication On the upstream side and the downstream side, wherein the second gas passage comprises at least: a second opening, fluidly connected to the upstream side; and a second hollow cathode cavity substantially adjacent to a downstream side of the gas passage, the second hollow cathode cavity comprising at least: a second cathode cavity a second cathode cavity volume; and a second cathode cavity opening conforming to the downstream side surface; 46 1374197 wherein the cathode cavity surface area and/or the cathode cavity volume are from the first gas A channel is added to the second gas passage. 12. The gas dispersion plate assembly of claim 11, wherein the first hollow cathode cavity further comprises: a first cathode cavity horn angle; a first cathode cavity depth; and a first cathode cavity opening diameter; and the second hollow cathode cavity further comprises: a second cathode cavity Λ horn angle; a second cathode cavity depth; a second cathode cavity opening diameter; wherein one or more properties are increased in the first gas channel relative to the second gas channel, and the one or more properties are selected from a cathode cavity horn angle, cathode A group consisting of cavity depth, six surface areas of the cathode cavity, a cathode cavity volume, or a cathode cavity opening diameter. The gas dispersion plate assembly of claim 12, wherein the first cathode cavity opening has a diameter of not less than about 0.1 inch, and the second cathode cavity has a six opening diameter of not more than about 1.0 inch. . The gas dispersion plate assembly of claim 12, wherein the first cathode cavity has a depth of not less than about 0.1 inch, and the second cathode cavity 47 1374197 has a depth of no more than about 2.0 inches. . The gas dispersion plate assembly of claim 12, wherein the first cathode cavity has a horn angle of not less than about 10 degrees, and the second cathode cavity has a horn angle of no more than about 50 degrees. 16. The gas dispersion plate assembly of claim 11, wherein the central region further comprises: a plurality of gas passages in fluid communication with the upstream side and the downstream side, wherein each of the plurality of gas passages a gas passage comprising at least: a cathode chamber having a surface area on the downstream side; and a cathode chamber having a volume of six on the downstream side; a first hollow cathode cavity density; and the edge region further comprises: a plurality of gas channels in fluid communication with the upstream side and the downstream side, wherein each of the plurality of gas channels comprises at least: a cathode The cavity surface area is located on the downstream side; and a cathode cavity volume is located on the downstream side; 48 1374197 and a second hollow cathode cavity density. 17. The gas dispersion plate assembly of claim 16, wherein the first hollow cathode cavity density is equal to the second hollow cathode cavity density, and the interval between the gas channels does not exceed about 〇. 6 miles. 18. The gas dispersion plate assembly of claim 16, wherein The first hollow cathode cavity density is less than the second hollow cathode cavity density. The gas dispersion plate assembly of claim 11, wherein the diffuser plate is rectangular. The gas dispersion plate assembly of claim 11, wherein the diffuser plate size is at least a projection area of the diffuser plate on a substrate. 2 1. The gas dispersion plate assembly of claim 16, wherein a cathode cavity surface area or a cathode cavity of the plurality of gas channels in the central region and the edge region: a volume system by a diffuser The center of the board progressively increases the size to the edge. 2. The gas dispersion plate assembly of claim 18, wherein the disperser plate further comprises: a third region between the central region and the edge region, the third region At least a plurality of gas passages are fluidly connected to the upstream side and the downstream side; and a third hollow cathode cavity density. 23. The gas dispersion plate assembly of claim 22, wherein the first hollow cathode cavity density is not less than the second hollow cathode cavity density About 10%. 2. The gas dispersion plate assembly of claim 1, wherein the surface of the downstream side of the diffuser plate is an electroless unadorned aluminum. 25. The gas dispersion plate assembly of claim 11, wherein the maximum displacement of the surface on the downstream side of the diffuser plate is between about 0.01% and about 3 of the equivalent radius of the diffuser plate. %between. 26. A plasma processing chamber comprising at least: a diffuser plate having an upstream side, a downstream side, and a diffuser plate size at least a projected area of the diffuser plate on a substrate; a substrate support member adjacent to a downstream side of the diffuser plate; and a space between the diffuser plate and the substrate support member, wherein the 50 1374197 is spaced apart in a central region to be larger than an edge region in. 27. The plasma processing chamber of claim 26, wherein the diffuser plate has a bendability. 28. The plasma processing chamber of claim 26, wherein the substrate support has a bendability. 29. The plasma processing chamber of claim 26, wherein the diffuser plate has a first bend and the substrate support has a second bendability. 30. The plasma processing chamber, wherein the diffuser plate further comprises a plurality of cathode cavities in a central region and a plurality of cathode cavities in an edge region, wherein the cathode cavity surface area 'the cathode cavity The volume or the density of the cathode cavity is increased from the central region to the side The plasma processing chamber of claim 30, wherein the first hollow cathode cavity density is less than the second hollow cathode cavity density. 3. The plasma processing chamber of claim 26, wherein the diffuser plate is rectangular. The plasma processing chamber of claim 26, wherein the surface of the downstream side of the diffuser plate is an electroless, non-decorative aluminum. 34. The plasma processing chamber of claim 26, wherein a maximum displacement of a surface of the diffuser downstream side of the diffuser plate is between about 0.01% and about the equivalent radius of the diffuser plate. Between 3 %. 35. A method of making a gas spreader for use in a plasma processing chamber, the method comprising: placing a plate for forming a gas diffuser on an annealing fixture, the annealing fixture Having a surface having a desired bendability; deforming the plate body such that a downstream surface of the plate body substantially conforms to the curvature of the surface of the annealing fixture; The plate is heated to a desired temperature for a desired length of time to induce stress in the plate by deforming the plate to relax; and cooling the plate to room temperature. 36. The method of claim 35, further comprising: forming a plurality of gas passages in the plate, the gas passages being in fluid communication with the upstream side and the downstream side, wherein each gas passage comprises at least: A hollow cathode cavity is located on the downstream side, wherein the hollow cathode cavity of each of the 52 1374197 gas channels comprises a cathode cavity volume and a cathode cavity surface area. 37. The method of claim 36, wherein the cathode cavity volume or the cathode cavity surface area of the plurality of gas channels is increased from a center of the plate to an edge. 38. The method of claim 35, wherein a plurality of methods are formed The gas passage further includes forming a plurality of gas passages, wherein the density of the gas passages in the plate increases from the center of the plate to the edge. 39. The method of claim 35, wherein the step of heating the plate comprises at least: increasing the temperature of the plate at a sufficiently slow rate to avoid distortion; Maintaining the temperature of the plate constant at a sufficiently high temperature for a sufficient time to relax the induced stress; and the step of cooling the plate comprises at least: cooling the plate to a room temperature at a sufficiently slow rate, To avoid distortion. 40. The method of claim 35, wherein the step of deforming the plate comprises at least: 53 1374197 protecting the surface of the plate; distributing a suitable weight to the plate prior to heating, thereby The plate conforms to the shape of the annealing fixture during heating. The method of claim 35, wherein the plate body is made of aluminum, and the step of heating the plate body comprises at least: Increasing the temperature of the plate at a rate of about 40 ° C per hour; and maintaining the temperature of the plate at about 40 ° C for about 4 hours; and the step of cooling the plate comprises at least: The plate was cooled to room temperature at a rate of about 25 °C. 42. The method of claim 35, wherein the maximum displacement of the surface of the plate on the downstream side of the bend is between about 0.01% and about 3% of the equivalent radius of the plate. The method of claim 35, wherein the bending property is substantially concave and corresponds to a segment of a circle or an ellipse. 44. The method of claim 35, wherein the plate has a thickness of between about 0.8 inches and about 3.0 inches. 54. The method of claim 35, wherein the plate body is rectangular. 46. The method of claim 44, wherein the plate has a size of at least 1200000 mm2. 47. The method of claim 35, wherein the method is under the board The surface of the swim side is non-plated, non-decorative aluminum. 48. A method of making a gas spreader for use in a plasma processing chamber, the method comprising: processing a bend into a downstream side of a plate, wherein the downstream side is bent by an arc To describe. 4 9. The method described in claim 48, further comprising: A plurality of gas passages are formed in the plate body, the gas passages being in fluid communication with the upstream side and the downstream side, wherein each of the gas passages in the plate body includes a hollow cathode cavity on the downstream side. 50. The method of claim 49, wherein a plurality of gas passages are formed in the plate body between the upstream side and the downstream side of the plate body, and the bending property is downstream of the plate body. The side was previously executed. 55 1374197 51. A gas dispersion method for manufacturing a plasma processing chamber, the method comprising: forming a body passage in a plate body for forming the gas diffuser, the plurality of gas passages being in fluid communication The upstream side and the downstream side of the body, wherein each gas in the plate passes through the hollow cathode cavity 6 on the downstream side; processing a substantially concave curvature to the plate and placing the plate Forming a desired curved surface on an annealing fixture; deforming the plate body such that a downstream surface of the plate body is curved to the surface of the annealing fixture; heating the plate body to A desired temperature > continues for a degree to induce and cool the plate to room temperature in the plate by deforming the plate to relax. 52. A method of depositing a film layer on a substrate, the method comprising: placing a substrate on a substrate support, wherein the substrate is disposed in a process region of a process chamber Passing a process fluid through a gas diffuser plate and a plurality of gas interconnects of the cloth are included in the side of the track; the set has a substantially long-term stress in the time of the contour; a support 56 a substrate supported on the substrate support, wherein the gas diffuser plate has a ' and the downstream side has a substantially concave curvature ^ ^ ^ ^ in the gas diffuser plate The downstream side is between the substrate support. The method of claim 52, wherein the diffuser plate further comprises a plurality of gas passages that communicate in fluid communication with the upstream side and the downstream side of the gas diffuser plate Each gas passage includes a hollow cathode cavity in fluid communication with the downstream side. 54. The method of claim 52, wherein the diffuser plate is rectangular. An upstream side and a downstream side; and the method of claim 52, wherein the diffuser plate is at least a projected area of the diffuser plate on a substrate. The method of claim 52, wherein the maximum displacement of the surface on the downstream side of the diffuser plate is between about 0.01% and about 3% of the equivalent radius of the diffuser plate. . 57. The method of claim 52, further comprising changing the volume, surface area or 57 1374197 density of the hollow cathode faces on the diffuser plate as needed to obtain a desired film thickness and Uniformity of properties. 58. The method of claim 52, further comprising adjusting the bendability of the curved downstream side of the gas diffuser plate as desired to achieve a desired film layer thickness and property uniformity. 59. The method of claim 52, wherein the process fluid is a fluid containing a fluid. 60. The method of claim 52, wherein the process fluid is a helium containing gas. 61. The method of claim 52, wherein the process fluid is a liquid containing vaporized hydrazine. The gas dispersion plate assembly of claim 1, wherein the upstream side of the diffuser plate comprises a bendability. 63. The plasma processing chamber of claim 27, wherein the upstream side of the diffuser plate has a bendability. 58