TW200702486A - Plasma uniformity control by gas diffuser curvature - Google Patents

Plasma uniformity control by gas diffuser curvature

Info

Publication number
TW200702486A
TW200702486A TW095119776A TW95119776A TW200702486A TW 200702486 A TW200702486 A TW 200702486A TW 095119776 A TW095119776 A TW 095119776A TW 95119776 A TW95119776 A TW 95119776A TW 200702486 A TW200702486 A TW 200702486A
Authority
TW
Taiwan
Prior art keywords
diffuser
diffuser plate
curvature
gas
density
Prior art date
Application number
TW095119776A
Other languages
Chinese (zh)
Other versions
TWI374197B (en
Inventor
Soo-Young Choi
Beom-Soo Park
John M White
Robin L Tiner
Emanuel Beer
Wei Chang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/143,506 external-priority patent/US20060005771A1/en
Priority claimed from US11/173,210 external-priority patent/US8074599B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200702486A publication Critical patent/TW200702486A/en
Application granted granted Critical
Publication of TWI374197B publication Critical patent/TWI374197B/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
TW95119776A 2005-06-02 2006-06-02 Plasma uniformity control by gas diffuser curvature TWI374197B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/143,506 US20060005771A1 (en) 2004-07-12 2005-06-02 Apparatus and method of shaping profiles of large-area PECVD electrodes
US11/173,210 US8074599B2 (en) 2004-05-12 2005-07-01 Plasma uniformity control by gas diffuser curvature

Publications (2)

Publication Number Publication Date
TW200702486A true TW200702486A (en) 2007-01-16
TWI374197B TWI374197B (en) 2012-10-11

Family

ID=48093249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95119776A TWI374197B (en) 2005-06-02 2006-06-02 Plasma uniformity control by gas diffuser curvature

Country Status (1)

Country Link
TW (1) TWI374197B (en)

Also Published As

Publication number Publication date
TWI374197B (en) 2012-10-11

Similar Documents

Publication Publication Date Title
WO2006017136A3 (en) Plasma uniformity control by gas diffuser curvature
EP1595974A3 (en) Plasma uniformity control by gas diffuser hole design
TWI475127B (en) Plasma CVD device
TW200500492A (en) Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20100136216A1 (en) Gas distribution blocker apparatus
CN107267958A (en) Shower nozzle
TW200512313A (en) In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
DE602005025293D1 (en) Magnetron sputtering
DE50113461D1 (en) Surface treatment or coating of sheet-like materials by means of an indirect atmospheric plasmatron
CA2563044A1 (en) Apparatus for directing plasma flow to coat internal passageways
JP2012097291A (en) Plasma cvd device
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
CL2008002158A1 (en) Process for shaping a razor blade that comprises the steps of providing a substrate, shaping a sharp edge, placing the substrate in a vacuum chamber, along with a first solid target, and supplying a gas to the vacuum bed that forms upon ionization. a thin film coating on said sharp edge
WO2010132716A3 (en) Anodized showerhead
WO2012075017A3 (en) Apparatus and process for atomic layer deposition
MY182033A (en) Plasma cvd apparatus, plasma cvd method, reactive sputtering apparatus, and reactive sputtering method
WO2006012048A3 (en) Deposition apparatus for providing uniform low-k dielectric
WO2009051087A1 (en) Plasma film forming apparatus
PL2268846T3 (en) A method for stable hydrophilicity enhancement of a substrate by atmospheric pressure plasma deposition
WO2017031821A1 (en) Ceramic ring capable of changing shape and appearance of surface thin film of wafer
TW201106807A (en) Plasma deposition source and method for depositing thin films
TW200633099A (en) Metallization target optimization method providing enhanced metallization layer uniformity
TW200702486A (en) Plasma uniformity control by gas diffuser curvature
WO2006002429A3 (en) Chamberless plasma deposition of coatings
WO2009117494A3 (en) Methods for forming a titanium nitride layer