CN101871099B

CN101871099B - Plasma uniformity control by gas diffuser curvature

Info

Publication number: CN101871099B
Application number: CN2009102222852A
Authority: CN
Inventors: 崔寿永; 朴范秀; J·M·怀特; R·L·蒂纳
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2004-07-12
Filing date: 2005-07-07
Publication date: 2013-09-25
Anticipated expiration: 2025-07-07
Also published as: CN101871099A; KR20070039931A; WO2006017136A3; EP1789605A2; WO2006017136A2; JP2008506273A

Abstract

Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.

Description

Plasma uniformity control by the gas distributor bendability

The present invention is that to be filed in July 7, application number in 2005 be 200580022984.2, be entitled as the dividing an application of application for a patent for invention of " by the plasma uniformity control of gas distributor ".

Technical field

Embodiments of the invention relate to a kind of gas dispersion board component substantially, and a kind of for the method for disperseing gas at treatment chamber.

Background technology

Liquid-crystal display or flat panel normally are used for active matrix display device, for example computer and TV screen.Plasma enhanced chemical vapor deposition (plasma enhanced chemical Vapor deposition, PECVD) be haply in order to deposit thin film layers on base material, this base material is the transparent substrate that for example is used for flat panel display or semiconductor wafer.PECVD normally finish to the vacuum chamber that includes base material by importing by precursor gas or gaseous mixture.Precursor gas or gas mixture are down guided via breaker plate typically, and wherein this breaker plate is adjacent to the top of chamber.Radio frequency by being couple to chamber from one or more (radio frequency, RF) source applies radio frequency power to chamber, and the precursor gas in the chamber or gaseous mixture can be quantized (for example exciting) becomes plasma body.The gas that excites or gaseous mixture react and form layer of material on substrate surface, and wherein this base material is positioned on the temperature controlled substrate support.During reaction aspirate the volatile by product that produces via exhaust system from described chamber.

Flat panel by the PECVD technical finesse is big typically, usually is to surpass 370mm * 470mm.Approaching with the large area substrates that surpasses 4 square centimeters will be predictable in future.Being used to provide the gas dispersion plate (or gas distributor plate) of even flow of process gases in flat panel top is sizable dimensionally, especially with the gas dispersion plate that is used for 200mm and 300mm semiconductor wafer processing comparatively speaking.

When substrate sizes continues to increase in the TFT-LCD industry, can become problem for thicknesses of layers and the control of membranous layer property homogeneity of large-area plasma enhanced chemical vapor deposition (PECVD).TFT is a kind of pattern of flat panel display.The difference of sedimentation velocity and membranous layer property between the center of base material and the edge (for example stress in thin film) can become remarkable.

Fig. 1 is the sectional view that illustrates thin-film transistor structure.General TFT structure is to carry on the back irrigation canals and ditches etching (back channel etch, BCE) staggered (or bottom-gate) TFT structure of counter-rotating as shown in Figure 1.The BCE processing procedure is preferable, this be because gate dielectric (silicon nitride) and essence and Doped n+amorphous silicon film layer can be deposited over identical PECVD and bleed in the program.Five patterning light shields have been related at this shown BCE processing procedure.Base material 101 can be included in and be essentially optically transparent material in the visible spectrum, for example glass or clear plastic cement.Base material can be different shape or size.Usually, for TFT used, base material was to have surface-area greater than the glass baseplate of about 500mm2.Grid electrode layer 102 is formed on the base material 101.Grid electrode layer 102 comprises electrical conductive layer, and described electrical conductive layer can be controlled the movement of charged particle carrier among the TFT.Grid electrode layer can comprise metal, for example combination of aluminium, tungsten, chromium, tantalum or above-mentioned metal at least.Grid electrode layer 102 can use traditional deposition, little shadow and etching technique to form.Between base material 101 and grid electrode layer 102, can have optionally insulating material, for example silicon-dioxide (SiO ₂) or silicon nitride (SiN), described insulating material also can use the embodiment of PECVD described here system to form.Then, grid electrode layer 102 uses conventional arts and by little shadow ground patterning and etched, to define gate electrode.

Gate dielectric 103 is formed on the grid electrode layer 102.Silicon-dioxide (the SiO that gate dielectric 103 can form for the embodiment that utilizes the PECVD system that the present invention describes ₂) or silicon oxynitride (SiON) or silicon nitride (SiN).Gate dielectric 103 can be formed up between about

Extremely

Thickness in the scope.

Bulk semiconductor layer 104 is formed on the gate dielectric 103.Bulk semiconductor layer 104 can comprise polysilicon or non-crystalline silicon at least, and (α-Si), described polysilicon or non-crystalline silicon can utilize embodiment or other traditional methods of knowing of PECVD described here system to deposit.Bulk semiconductor layer 104 can be deposited between about

Extremely

Thickness in the scope.The semiconductor layer 105 that mixes is formed on the top of semiconductor layer 104.The semiconductor layer 105 that mixes can comprise the polysilicon of Doped n-type (n+) or p-type (p+) or non-crystalline silicon, and (α-Si), described polysilicon or non-crystalline silicon can utilize embodiment or other traditional methods of knowing of PECVD described here system to deposit.The semiconductor layer 105 that mixes can be deposited between about

Extremely

Thickness in the scope.The example of the semiconductor layer 105 that mixes namely be Doped n+α-Si rete.Bulk semiconductor layer 104 is to use drive technology with the semiconductor layer 105 that mixes and by little shadow ground patterning and etching, and above the gate dielectric insulant, described tableland also is as the reservior capacitor dielectric substance with the tableland that defines this two rete.The semiconductor layer 105 that mixes is the parts that directly are contacted with bulk semiconductor layer 104, has formed the semi-conductor joint.

Then, conductive layer 106 is deposited on institute's exposed surface.Conductive layer 106 can comprise metal at least, for example aluminium, tungsten, molybdenum, chromium, tantalum, with the combination of above-mentioned metal.Conductive layer 106 can use conventional deposition to form.Conductive layer 106 and the semiconductor layer 105 that mixes can be by little shadow ground patternings, contact with drain with the source electrode of definition of T FT.Afterwards, coating layer 107 can be deposited.Coating layer 107 is conformally to be coated on institute's exposed surface.Coating layer is isolator haply, and can comprise for example silicon-dioxide (SiO at least ₂) or silicon nitride (SiN).Coating layer 107 for example can use PECVD or other traditional methods of knowing to form.Coating layer can be deposited between about

Extremely

Thickness in the scope.Afterwards, coating layer 107 is to use conventional art and by little shadow ground patterning and etching, to open the contact hole in the coating layer.

Then, transparent conductor layer 108 is deposited and is patterned to contact with conductive layer 106.Transparent conductor layer 108 is included at least and is essentially optical clear and the material for electrically upward conducting electricity in the visible spectrum.Transparent conductor layer 108 for example can comprise at least indium tin oxide (indium tin oxide, ITO) or zinc oxide.The patterning of transparent conductor layer 108 can be reached by traditional little shadow and etching technique.

The doping of use in liquid-crystal display (or flat panel) or the non-crystalline silicon of do not mix (essence) (α-Si), silicon-dioxide (SiO ₂), silicon oxynitride (SiON) and silicon nitride (SiN) rete be to use the embodiment of the plasma enhanced chemical vapor deposition system that the present invention describes to deposit.TFT structure described herein only is to use as example.

When the size of base material in the TFT-LCD industry continued to increase, especially suitably substrate sizes was at least about 1000mm * 1200mm (or about 1200000mm ²) time, can become for the thicknesses of layers of large-area plasma enhanced chemical vapor deposition and character homogeneity more has problem.The example of the homogeneity question of noticing includes higher sedimentation velocity, and for some high sedimentation velocity silicon nitrides and α-Si rete, more compressible rete in the central zone of big base material.Thickness evenness in the base material appears as " dome-shaped " or " center is thick ", and the rete of central zone is thicker than fringe region.Bigger base material has the thick homogeneity question in worse center.

Therefore, the demand of having improved the gas dispersion board component is arranged, this gas dispersion board component can (especially silicon nitride and α-Si) improve the homogeneity of film deposition thickness and membranous layer property, and wherein this rete is to be deposited on the big base material in the PECVD chamber for thin film layer.

Summary of the invention

The invention provides for the embodiment that disperses the gas dispersion plate of gas at treatment chamber.In one embodiment, the gas dispersion board component that is used for plasma processing chamber comprises the decollator plate at least, and this decollator plate has upstream side and downstream side, pass the upstream side of decollator plate and the gas passage between the downstream side, and be positioned at the cave, hollow cathode chamber in the downstream side of those gas passages.The downstream side of this decollator plate has bendability, to improve thickness evenness and the membranous layer property homogeneity by the thin film layer of PECVD deposition.On the one hand, cave, the hollow cathode chamber volume density of decollator, surface area density or cave, hollow cathode chamber density are that the center by decollator increases to the edge.In another aspect, the downstream side of gas distributor plate is divided into several concentric blocks, wherein the gas passage in each block is identical, and density, volume or the surface-area in the cave, hollow cathode chamber of the gas passage in each block are that center by the decollator plate increases to the edge progressively.

In another embodiment, a kind of plasma processing chamber, at least comprise the decollator plate, this decollator plate has upstream side, downstream side, pass the upstream side of decollator plate and the gas passage between the downstream side, with the cave, hollow cathode chamber that is positioned at the downstream side of those gas passages.The downstream side of this decollator plate has bendability, to improve thickness evenness and the membranous layer property homogeneity by the thin film layer of PECVD deposition.On the one hand, cave, the hollow cathode chamber volume density of decollator, hollow cathode chamber cave surface area density or cave, hollow cathode chamber density are that the center by decollator increases to the edge.

In another aspect, a kind of manufacturing comprises at least for the method for the gas distributor of plasma processing chamber: soften the decollator plate by heating; Anneal the crooked decollator plate of mounting block to bendability with bending; And the processing gas passage is to the decollator plate.

In another aspect, a kind of manufacturing method of being used for the gas distributor of plasma processing chamber comprise at least the processing bendability to smooth basically decollator plate and processing gas passage to the decollator plate.

In another aspect, the method of a kind of deposit thin film layers on base material, this method comprises at least: put base material in the treatment chamber with gas distributor plate, this gas distributor plate has bendability, upstream side and downstream side, pass the upstream side of decollator plate and the gas passage between the downstream side, and be positioned at the cave, hollow cathode chamber in the downstream side of those gas passages; Process gas is flowed by the gas distributor plate towards the base material that is supported on the substrate support; Set up plasma body between this decollator plate and this substrate support; And deposit thin film layers is on this base material that is positioned at this treatment chamber.On the one hand, cave, the hollow cathode chamber volume density of the gas passage at decollator plate center, hollow cathode chamber cave surface area density or cave, hollow cathode chamber density are less than the identical parameters at the gas passage of decollator panel edges.

Description of drawings

Stating feature before the present invention can be by being understood with reference to embodiment in further detail, and some of them embodiment is illustrated in the accompanying drawings.Yet, must be noted that accompanying drawing only shows exemplary embodiments of the present invention, and therefore can not limit the scope of the invention that the present invention can allow other equivalent embodiment.

Fig. 1 is the sectional view that illustrates thin-film transistor structure.

Fig. 2 is the thickness curve that is presented at amorphous silicon film layer on the 2200mm width glass baseplate.

Fig. 3 is the thickness curve that is presented at another amorphous silicon film layer on the 2200mm width glass baseplate.

Fig. 4 is the thickness curve that is presented at another amorphous silicon film layer on the 2200mm width glass baseplate.

Fig. 5 is the sectional view of an embodiment of plasma enhanced chemical vapor deposition system.

Fig. 6 A shows the RF hollow cathode.

Fig. 6 B-6G is the different designs that illustrates cave, hollow cathode chamber.

Fig. 8 A is the definition of diameter " D ", the degree of depth " d " and the tubaeform angle " α " of demonstration perforate, and wherein perforate is the downstream that extends to gas passage.

Fig. 8 is the sectional view that illustrates the gas distributor plate.

Fig. 9 A is presented at the decollator of decollator hole plate is arranged in a plurality of blocks.

Fig. 9 B is the decollator plate that shows cave, the hollow cathode chamber diameter with mixing, and interior region hollow cathode chamber cave volume and surface area density are less than hollow cathode chamber, external region cave volume and surface area density.

Fig. 9 C shows that having cave, most hollow cathode chamber is identical decollator plate, and has some bigger caves, hollow cathode chamber near decollator panel edges place.

Fig. 9 D is the downstream side view that shows the decollator plate of the decollator hole density with change.

Figure 10 is the sectional view that illustrates the gas distributor plate embodiment with bendability.

Figure 10 A is the sectional view that illustrates the gas distributor plate embodiment with bendability.

Figure 10 B is the sectional view that illustrates the gas distributor plate embodiment with bendability.

Figure 11 is the thickness curve that is presented at the amorphous silicon film layer on the glass baseplate, and described glass baseplate is to use the decollator plate with bendability.

Figure 12 illustrates in order to the schema of crooked decollator plate to the decollator annealing process of desired bendability.

Figure 13 is the exemplary weight configuration that illustrates in order to the aluminium decollator plate of 1.4 inch thickness is annealed.

For clear purpose, if feasible, this paper is to use identical label to specify member identical between the figure.

Embodiment

It is a kind of for the gas dispersion assembly that provides gas to carry in treatment chamber that the present invention provides haply.Will be according to being described in order to the plasma enhanced chemical vapor deposition system that handles large area substrates below the present invention, for example by the Applied Materials of California, USA Santa Clara, plasma enhanced chemical vapor deposition (PECVD) system that the AKT of Inc. branch obtains.Yet, it must be appreciated that the present invention can be applied in (for example etch system) on other structures, other chemical gas-phase deposition systems, need disperse the system of gas with other in treatment chamber, includes the system that handles circular base material.

For silicon nitride film layer, the thick homogeneity question in center solves by size and the distribution that changes the cathode cavity cave on the downstream surface of PECVD gas distributor plate.The cathode cavity cave has strengthened the plasma ionization in the PECVD chamber.Because silicon nitride film layer thickness and membranous layer property homogeneity are the regional plasma densitys that depends upon consumingly in the PECVD chamber, for big base material, the degree of depth, diameter, surface-area and/or the density that change cave, hollow cathode chamber on the surface of decollator plate can be eliminated the thick homogeneity question in center.This technology is so-called hollow cathode gradient (hollow cathode gradient) or HCG method both, and below with reference to Fig. 6 A, 8 in detail it is described in detail more.The complete description of HCG method be provided in people such as aforementioned Choi in the U.S. patent application case of application on July 12nd, 2004 number 10/889,683, be entitled as in the patent application of " Plasma Uniformity Control By Gas Diffuser Hole Design ".

For α-Si rete, thickness evenness for size greater than 1200000mm ²Base material still be problem." substrate sizes " and " decollator board size " are nominally refer to base material or surface-area or the area occupied of decollator plate, but not wetting surface-area (i.e. all sides and total surface and total surface area) as used herein.For example, 1000mm * 1000mm decollator plate has 1000000mm ²Nominal size, but higher wetted surface area (include top and basal surface, lateral edge, count the feature of decollator inner area with all) arranged.Fig. 2 is the thickness curve that is presented at the amorphous silicon film layer on the 2200mm width glass baseplate.The abscissa representative is along the position of each thickness measurement of 2200mm length base material, and unit is millimeter.Ordinate represents the sedimentation velocity of amorphous silicon deposition on base material, and unit is

Two data sets are to be drawn on Fig. 2, and data set 201 is square, and data set 202 is diamond.The sedimentation velocity curve that data set 201 and 202 representatives measure along each diagonal lines of base material.As shown in Figure 2, this two curve does not have too big-difference, and what therefore can conjesture is that the thick curve in center that is presented by data set 201 and 202 is quite constant in decollator length.

The gas distributor plate of incorporating HVG into is in order to depositing α-Si rete, and this α-Si rete is measured to be used for data set 201 and 202.When depositing this rete, electrode space (be in the PECVD chamber between gas distributor plate and the substrate support distance) is 0.800 inch.The processing procedure situation that deposits during this rete is: 10000sccm SiH ₄Gas flow rate, 40000sccm H ₂Gas flow rate, 11000 watts of radio-frequency plasma power, 2.7 holder ear chamber pressures, with 340 ℃ (interior substrate heater) and 360 ℃ of (outer substrate heater) base material temperatures.The member of PECVD chamber will be described more in detail in conjunction with Fig. 5, and these members include gas distributor plate, substrate support and electrode space.Except SiH ₄Other silicon-containing gas, Si for example ₂H ₆, can be used in the PECVD chamber, deposit α-Si rete.Please consult Fig. 2 again, although used to incorporate into the gas distributor of HCG plate is arranged, the film thickness uniformity of amorphous silicon film layer still has the thick effect in center, and has poor homogeneity and membranous layer property at the base material edge.The base material central zone 203 of even film layer linearity curve demonstrates acceptable membranous layer property and homogeneity, and fringe region 204 and 205 shows homogeneity and the membranous layer property of going on business.This demonstrates HCG certain effect.

In narrower electrode space, can improve the thickness evenness in the amorphous silicon film layer of edge, but this can be offseted by the poor membrane uniformity at the center of big base material.The 3rd and 4 figure are the thickness curves that are presented at the amorphous silicon film layer on the 2200mm width glass baseplate, and their electrode space is respectively 0.650 inch and 0.550 inch.In Fig. 3, thicknesses of

layers curve

301 and 302 has shown that the homogeneity of base material central zone 303 worsens, and the thickness evenness of

fringe region

304 and 305 improves a little.Except 0.650 inch narrower electrode space, measure and α-Si rete of being used for Fig. 3 is to measure with institute and be deposited over identical PECVD chamber and under identical processing procedure situation for α-Si rete of Fig. 2.Fig. 4 illustrates the thicknesses of

layers curve

401 and 402 that is deposited over the α-Si rete under the same process situation as the 2nd and 3 figure retes, except electrode space be 0.550 inch.Thicknesses of

layers curve

401 and 402 is that the further homogeneity that has shown central zone 403 worsens, and the remarkable thickness evenness that improves of fringe region 404 and 405.Hereat, Fig. 2,3 and 4 shown data are to point out, electrode space can influence α-Si rete more consumingly than hollow cathode Gradient Effect.

As Fig. 2,3 and 4 shown persons, when depositing α-Si rete in big base material, by using HCG gas distributor plate in different electrode space, the film thickness uniformity problem can be changed but can not be eliminated.By and large, narrower electrode space can be improved the edge thickness homogeneity, and the center thickness homogeneity can be improved in wideer interval.But, do not have unitary electrode under these processing procedure situations, can allow at center and the fringe region of α-Si rete acceptable thickness evenness is arranged at interval.

When having HCG gas distributor plate, except electrode space, can adjust other process parameter to reach the thickness evenness accepted of α-Si rete.Yet the serious disappearance of this mode namely is to need to rely on little processing procedure form can accept α-Si rete to produce.The processing procedure form is for still producing the variation range of all process parameter (for example base material temperature or gas flow rate) of acceptable result.By narrow processing procedure form, medium and small (sometimes the being to detect) variation of process parameter can cause in the finished product and change greatly.These variations can be the random fluctuation that always exists during substrate process, or along with the wearing and tearing for the treatment of chamber member or measuring equipment lose accuracy and drift gradually, long-term.This means, may not be to act on the identical PECVD chamber nominally produce the same process parameter setting that can accept rete with the PECVD chamber, and the process parameter of each chamber may need to be finely tuned.Perhaps, in the time of in process parameter must be operated at little processing procedure form, depositing can accept the PECVD chamber of rete on base material more may be along with the time begins to deposit unacceptable rete.Hereat, this method is unpractiaca for a large amount of processing of base material.Therefore, the silicon nitride that uses the gas distributor plate only have HCG to solve to be deposited on the big base material and the thickness evenness problem of α-Si rete.

The PECVD chamber of demonstration

Fig. 5 is the sectional view of plasma enhanced chemical vapor deposition system 500, and this system 500 is suitable for benefiting from the present invention.PECVD system 500 is the Applied Materials by California, USA Santa Clara, and the AKT of Inc. branch obtains.System 500 comprises treatment chamber 502 haply, and treatment chamber 502 is coupled to gas source 504.Treatment chamber 502 has wall 506 and bottom 508, and wall 506 defines process volume 512 with bottom 508.Process volume 512 can be come access via the port (not shown) in wall 506 typically, and this port is to help base material 540 to move into and send this treatment chamber 502.Wall 506 and bottom 508 can be made by the material of the aluminium of single block or other and process-compatible.Wall 506 supports cap assemblies 510, and this assembly 510 comprises suction room 514, and this suction room 514 is that process volume 512 is coupled to exhaust port (exhaust port comprises different aspiration means, does not show).Perhaps, the exhaust port (not shown) is to be arranged in the base plate for the treatment of chamber 502, and process volume 512 does not need to aspirate room 514.

Temperature controlled substrate support assembly 538 is arranged in the treatment chamber 502 by middle heart.Support body assembly 538 is to support glass baseplate 540 during processing procedure.In one embodiment, substrate support assembly 538 comprises aluminium body 524 at least, and aluminium body 524 is to surround embedded at least well heater 532.The well heaters 532 (for example resistive element) that are arranged in the support body assembly 538 are coupled to optionally power supply 574, and controllably heat support body assembly 538 and the glass baseplate 540 on support body assembly 538 to preset temp.Typically, in the CVD processing procedure, well heater 532 can maintain glass baseplate 540 uniform temperature between about 150 to about 460 ℃, is to decide according to the deposition manufacture process parameter that is used for institute's deposition material.

By and large, support body assembly 538 has bottom side 526 and top side 534.Top side 534 supports glass baseplate 540.Bottom side 526 has the body of rod 542 that couples with oneself.The body of rod 542 is coupled to the lifting system (not shown) with support body assembly 526, wherein this lifting system be mobile this support body assembly 538 in process position (person as shown) and the position that descends between last life, those positions are to help base material to transmit to enter and send treatment chamber 502.The body of rod 542 provides wire conduit extraly, with the electrical and thermal coupling lead-in wire between other members that are used for support body assembly 538 and system 500.

Bellows 546 are to couple between the bottom 508 of support body assembly 538 (or body of rod 542) and treatment chamber 502.Bellows 546 are to providing vacuum-sealing between the atmosphere outside process volume 512 and the treatment chamber 502 when support body assembly 538 vertical shifting.

Support body assembly 538 is circular haply, make and to be applied to the radio frequency that is positioned at the gas dispersion plate 518 between cap assemblies 510 and the substrate support assembly 538 (or other are arranged on cap assemblies or the contiguous electrode of locating at chamber) by power supply 522 (radio frequency, RF) power can excite the gas in the process volume 512 that is present between support body assembly 538 and the breaker plate assembly 518.RF power from power supply 522 is to be selected to match in substrate sizes, to drive chemical vapor deposition process.

Cap assemblies 510 is to provide last boundary line to process volume 512.In one embodiment, cap assemblies 510 is made by aluminium.Cap assemblies 510 comprises the suction room 514 that is formed in self, and this suction room 514 is coupled to outside suction system (not shown).The suction room 514 be in order to from processing procedure space 512 equably pilot gas and processing procedure by product and the discharge treatment chamber 502.

Cap assemblies 510 typically comprises input port 580, and the process gas that is provided by gas source 504 can be imported into and pass input port 580 and enter treatment chamber 502.Input port 580 also is coupled to cleaning source 582.Cleaning source 582 typically provides cleaning agents (fluorine that for example dissociates), and this cleaning agents is to be imported into treatment chamber 502 to remove deposition by-products and rete from treatment chamber hardware (comprising gas dispersion board component 518).

Gas dispersion board component 518 is coupled to the inboard 520 of cap assemblies 510.The shape of gas dispersion board component 518 typically be constructed as meet glass baseplate around, for example for large-area planar panel base material be Polygons and for wafer for circular.Gas dispersion board component 518 comprises punched areas 516, and processing procedure and other gas supplied with by gas source 504 are to be transferred to pass punched areas 516 to process volume 512.So that equally distributed gas to be provided, this equally distributed gas is to enter in the treatment chamber 502 by gas dispersion board component 518 to the punched areas 516 of gas dispersion board component 518 by construction.The gas dispersion plate that is benefited by the present invention is to be described in commonly assigned people such as Keller in the U.S. patent application case of application on August 8 calendar year 2001 number 09/922,219, people such as Yim are in the U.S. patent application case of on May 6th, 2002 application number 10/140,324, people such as Blonigan are in the U.S. patent application case of on January 7th, 2003 application number 10/337,483, authorized people's United States Patent (USP) cases such as White numbers 6 on November 12nd, 2002,477,980, people such as Choi are in the U.S. patent application case of on April 16th, 2003 application number 10/417,592, people such as Choi are in the U.S. patent application case of on April 12nd, 2004 application number 10/823, in 347, above-mentioned patent document is merged in this paper with as a reference at this.

Gas dispersion board component 518 typically comprises decollator plate (or breaker plate) 558, and decollator plate 558 hangs from hanging deck 560.Decollator plate 558 and hanging deck 560 can or ground comprise solid memder.Several gas passages 562 be form pass decollator plate 558 with the gas distribution that allows to preset by gas dispersion board component 518 and enter process volume 512.Room 564 be formed between hanging deck 560, decollator plate 558, and the internal surface 520 of cap assemblies 510 between.Room 564 allows gas flow to disperse equably with the width at decollator plate 558 equably by cap assemblies 510, thereby makes gas can be provided in central hole 516 tops, zone equably and flow through gas passage 562 with even distribution mode.

Decollator plate 558 is made by stainless steel, aluminium, nickel or other RF electro-conductive materials typically.Decollator plate 558 can be cast, be made the casting of, Rong, the hot compacting or sintering with brass isobaricly.In one embodiment, diffusing device plate is made by the aluminium of unadorned electroless plating.The aluminium surface that is used for the electroless plating of decollator plate 558 has been shown as can reduce on this surface and has formed particulate, and wherein those particulates may subsequently pollute handled base material in PECVD system 500.In addition, when decollator plate 558 is not electroplated, can reduce the manufacturing cost of decollator plate 558.Suitable be used for decollator plate 558 and unadorned aluminium surface is not contained scratch and burr substantially, chemically cleaned to eliminate undesirable pollution before use, and can be ground by mechanical mill or electricity.Can benefit aluminium decollator plate from electroless plating of the present invention and be to be described in commonly assigned United States Patent (USP) case numbers 6,182, in 603, this patent is that people such as Shang is in application on July 13rd, 1998 and title is " Surface-Treated Shower Head For Use In a Substrate Processing Chamber ".The thickness of decollator plate 558 is between about 0.8 inch to about 2.0 inches.Decollator plate 558 can for circle being used for the semiconductor wafer manufacturing, or Polygons (for example rectangle) is to be used for the flat panel display manufacturing.

Decollator plate 558 is for smooth and be parallel to base material 540 basically, and on the surface that is distributed in decollator plate 558 of identical gas passage 562 for uniformly, these all are to be the standard practice in this skill.The structure of such decollator 558 provide suitable gas stream and process volume 512 ionic medium volume density homogeneities with depositional coating in less than 1200000mm ²Base material on.Hereat, when deposited silicon nitride in the PECVD chamber, α-Si and other thin retes in less than 1200000mm ²Base material on the time, thickness evenness and membranous layer property homogeneity only can reach on institute's depositional coating by changing process parameter (for example process gas flow velocity, plasma power, base material temperature and chamber pressure).Yet, when the size of base material increases, the institute's depositional coating (homogeneity of silicon nitride and α-Si) more difficult keeping that become especially.Plane with equally distributed gas passage 562 (gas passage 562 have consistent size and shape) the device plate 558 that looses normally can't deposit and can accept thickness and the inhomogeneity rete of membranous layer property to large area substrates.

The hollow cathode gradient

For the PECVD rete, in the time of on being deposited on big base material (that is at least about 1000mm * 1200mm), more difficult the keeping of the homogeneity of thicknesses of layers and membranous layer property change.For silicon nitride film layer, the thickness on the base material can present " dome-shaped ", and rete is thicker than fringe region in the central zone.The more deterioration of this effect on bigger base material.

What shown is, in the being deposited on PECVD chamber greater than about 1200000mm ²Base material on silicon nitride film layer, thicknesses of layers and membranous layer property homogeneity can be improved by using hollow cathode gradient (hollow cathode gradient) or HCG.The HCG method is described and is the U.S. patent application case of " Plasma Uniformity Control By Gas Diffuser Hole Design " number 10/889,683 with reference to Fig. 6 A and Fig. 8 and aforementioned title in following meeting.Gas dispersion plate 558 with HCG can improve the homogeneity of silicon nitride film layer thickness and membranous layer property by changing process volume 512 interior plasma distribution.This is because the film deposition by PECVD is to decide according to plasma body source initiatively basically.Therefore, 512 inhomogeneous plasma distribution can cause membrane uniformity poor on the base material 540 in the process volume.

Intensive chemical reactivity plasma body can be created within because of hollow cathode effect in the process volume 512 of PECVD system 500, sees also the 6th figure and will describe at this.RF for the discharge of the hollow cathode of electronegative RF electrode 601 produces, and the aborning driving force of described RF is to stride across in the frequency that the discharge of space, RF electrode 601 place is covered or wall covers 602a or 602b to adjust dc voltage V _s, i.e. so-called self-bias voltage.Fig. 6 A demonstrates the RF hollow cathode, and covers the repulsion electric field 603a of 602a and 602b and the concussion of the electronics " e " between 603b movement at relative space charge.The thickness that space charge covers 602a and 602b equals " δ ".Electronics " e " is radiated by cathode wall, is RF electrode 601 in this example, and cathode wall can be the wall of the gas passage 562 that is adjacent to process volume 512.Gas passage 562 is to be shown among Fig. 5 and Fig. 8 with process volume 512.Please consult Fig. 6 A again, electronics " e " is accelerated by electric field 603a and covers 602a by space charge.Because relative space charge covers the repulsion field of 602a and 602b, electronics " e " along the path 605 pass RF electrode 601 wall interior space and shake.Electronics " e " is by with process gas collision and expended energy, and produces more polyion.The ion that produces can be accelerated to RF electrode 601, strengthens the radiation of secondary electron by this, and wherein secondary electron can produce extra ion.Generally speaking, the cave, chamber between the cathode wall can strengthen the ionization of evaporation of electron and gas.Conical butt feature in the cathode wall (when for example the gas inlet diameter of the gas passage in being formed on the decollator plate is less than the pneumatic outlet diameter) can be than cylindrical wall for more efficient with gas ionization.The example in conical butt cathode cavity cave is described and in more detail with reference to Fig. 8.Because the difference of the Ionization Efficiency between gas inlet and the pneumatic outlet has produced current potential Ez.

For decollator plate 558, cave, hollow cathode chamber be the position on the downstream end of gas passage 562, and be adjacent to process volume 512.What demonstrated is, wall or the density in cave, hollow cathode chamber and the design of configuration in the cathode cavity cave by changing gas passage 562, therefore gas ionization can be changed to control plasma density, with thicknesses of layers and the character homogeneity of institute's deposited silicon nitride rete.Prove that the method for this phenomenon and result are the U.S. patent application case number 10/889,683 that are described in aforementioned reference, are entitled as in the patent application of " Plasma Uniformity Control By Gas Diffuser Hole Design ".The example that is adjacent to the cave, hollow cathode chamber of process volume 512 is second shrinkage pool 812 of Fig. 8.Hollow cathode effect mainly is in the frusto-conical region that occurs in the face of second shrinkage pool 812 of process volume 512.Fig. 8 design only is the usefulness as example.The present invention can be applied to cave, the hollow cathode chamber design of other patterns.Other examples of cave, hollow cathode chamber design are including but not limited to the shown design of Fig. 6 B-6G.By changing volume and the surface-area in cave, hollow cathode chamber (i.e. second shrinkage pool 812), then can change the plasma ionization rate.

Fig. 8 is the part sectional view of the decollator plate 558 of demonstration, described decollator plate 558 can be suitable for benefiting from the present invention, and be described in the commonly assigned U.S. patent application case number 10/417 of on April 16th, 2003 application, in 592, title is " Gas Distribution Plate Assembly for Large Area Plasma Enhanced Chemical Vapor Deposition ", and this patent document is merged in this paper with as a reference at this.Decollator plate 558 comprises in the face of first or the upstream side 802 of cap assemblies 510, second or the downstream side 804 relative with facing support body assembly 538.Each gas passage 562 is defined by first shrinkage pool 810, and perforate 814 is coupled to second shrinkage pool 812 with this first shrinkage pool 810, and they are in conjunction with the fluid path that passes gas dispersion plate 558 with formation.First shrinkage pool 810 extends first degree of depth 830 to the bottom 818 by the upstream side 802 of gas dispersion plate 558.The bottom 818 of first shrinkage pool 810 can be attenuated, be become the inclined-plane, be chamfered or sphering, can reduce flow limitation when gas is flowed immersion perforate 814 by first shrinkage pool.First shrinkage pool 810 has about 0.093 usually to about 0.218 inch diameter, and is about 0.156 inch in one embodiment.

Second shrinkage pool 812 is formed in the decollator plate 558, and by downstream side (or end) 804 extend about 0.10 inch to about 2.0 inches degree of depth 832.The preferably, the degree of depth 832 is between about 0.1 inch to about 1.0 inches.The opening diameter 836 of second shrinkage pool 812 is haply between about 0.1 inch to about 1.0 inches, and can launch with about 10 degree to angle 816 flares between about 50 degree.The preferably, opening diameter 836 is between about 0.1 inch to about 0.5 inch, and tubaeform angle 816 is between about 40 degree between about 20 degree.The surface-area of second shrinkage pool 812 is between about 0.05 square inch to about 10 square inches, and is preferably between about 0.05 square inch to about 5 square inches.The diameter of second shrinkage pool 812 refers to intersect at the diameter of downstream surface 804.One example in order to the decollator plate of handling 1870mm * 2200mm base material has second shrinkage pool 812 of 0.302 inch of diameter and tubaeform angle 816 about 22 degree.Distance 880 is between about 0 inch to about 0.6 inch between the ring edge 822 of the second adjacent shrinkage pool 812, is preferably between about 0 inch to about 0.4 inch.The diameter of first shrinkage pool 810 usually but be not limited to the diameter that is equal to or less than second shrinkage pool 812 at least.The bottom 820 of second shrinkage pool 812 can be attenuated, be become the inclined-plane, be chamfered or sphering, to reduce the pressure-losses that gas flows out perforate 814 and enters second shrinkage pool 812.Moreover, because 804 can be in order to reduce the exposed surface area in second shrinkage pool 812 and the downstream side 804 of faces substrate to the downstream side near the perforate 814, can reduce the decollator plate 558 downstream areas that are exposed to fluorine, reduce the fluoride pollution that institute's depositional coating takes place by this, wherein fluorine is to be provided during chamber clean.

Perforate 814 is the bottom 820 that couples the bottom of first shrinkage pool 810 818 and second shrinkage pool 812 substantially.Perforate 814 has the diameter between about 0.01 inch to about 0.3 inch (being preferably about 0.01 inch to about 0.1 inch) haply, and typically has the length of about 0.02 inch to about 1.0 inches (being preferably about 0.02 inch to about 0.5 inch).Length 834 and the diameter (or other geometric attributes) of perforate 814 are main sources of the back pressure in the room 564, and described back pressure has impelled the even distribution of gas at the upstream side 802 of gas dispersion plate 558.It is consistent that perforate 814 is constructed as typically between several gas passages 562; Yet it is different that the restriction of passing perforate 814 can be constructed as between those gas passages 562, with impel more gases with respect to other zones of gas dispersion plate 558 by zones.For example, perforate 814 can have larger diameter and shorter length in those gas passages 562 of gas dispersion plate 558, be adjacent to the wall 506 for the treatment of chamber 502, therefore more gases can flow through punched areas 516 to be increased in glass baseplate sedimentation velocity on every side.The thickness of decollator plate is between about 0.8 inch to about 3.0 inches, is preferably between about 0.8 inch to about 2.0 inches.

Use Fig. 8 as example, the volume of second shrinkage pool (or cave, hollow cathode chamber) 812 can be changed by changing diameter " D " (or the opening diameter 836 among Fig. 8), the degree of depth " d " (or the length 832 among Fig. 8) and tubaeform angle " α " (or the tubaeform angle 816 among Fig. 8), as shown in Figure 8.Change the surface-area that diameter, the degree of depth and/or tubaeform angle also can change second shrinkage pool 812.What believe is that higher plasma density may be the reason in the higher sedimentation velocity in the center of base material 540 (asking for an interview Fig. 5).The combination of the shrinkage pool degree of depth, diameter, tubaeform angle or these three parameters at edge to the center by reducing the decollator plate, the plasma density of base material central zone can be reduced to improve the homogeneity of thicknesses of layers and membranous layer property.Demonstrate the method for this phenomenon and result and be and be described in the aforesaid U.S. Patent application case number 10/889,683, title is " Plasma Uniformity Control By Gas Diffuser Hole Design ".

What also be shown is that the variation that cave, the hollow cathode chamber designing institute of decollator plate is done is necessary on decollator plate surface for progressive, to avoid the stepped variation of thicknesses of layers on the machine cancer.Yet the diameter in cave, hollow cathode chamber and the variation of length need not be good continuous by center to the edge of decollator plate, as long as these variations are smooth-going and progressive.For example, enough progressive variations that cave, the hollow cathode chamber designing institute of decollator plate is done can be reached by many consistent blocks that are arranged to concentric pattern, as long as the variation from block to block is enough little.But the size (volume and surface-area) in cave, hollow cathode chamber must be arranged by the integral body increase at center to the edge of decollator plate.For example shownly be, for 1000mm * 1200mm decollator plate, can to accept film thickness uniformity be unsuitable for making only to use three concentric blocks, and wherein cave, the hollow cathode chamber conical butt degree of depth increases by 35% by block to block.In this case, the number of block should be increased, and changes the noticeable change that be reduced to avoid to correspond to the thicknesses of layers of each block at the block of the conical butt degree of depth to block.The amount that changes between employed number of blocks and the block is to decide according to some factors (including the size of decollator plate and the heteropical size of center thick film layers of institute's desire correction), and can be determined by those skilled in the art under given situation.

Fig. 9 A is the fish-eye view (looking down in the downstream side) that shows the decollator plate.The decollator plate is divided into N block with one heart.With one heart block is defined by the zone between interior and outer boundary, and wherein this interiorly have the geometrical shape identical with decollator slab integral shape with outer boundary.In each block, the decollator hole is identical.Block can be square, rectangle or circle.To block N, the size in cave, hollow cathode chamber (volume and surface-area) increases gradually by block 1.This increase can be by increasing cave, hollow cathode chamber the combination of diameter, length, tubaeform angle or these parameters reach.

The diameter in cave, hollow cathode chamber and length do not need to be applicable to the second all shrinkage pools 812 by the increase at center to the edge of decollator plate, as long as for the cave, hollow cathode chamber size (volume and surface-area) of per unit downstream disperser plate surface-area one whole increasing arranged.For example, some second shrinkage pools 812 can be held identical in whole decollator plate, and other second shrinkage pools 812 have the progressive increase of cave, hollow cathode chamber size (volume and surface-area).In another example, second shrinkage pool 812 has the progressive increase of cave, hollow cathode chamber size (volume and surface-area), and also has some little hollow cathode chamber cave C1 to be positioned at the edge of decollator plate to increase whole hollow cathode chamber cave volume and the surface-area of per unit downstream disperser plate surface-area further.This example is to be shown in Fig. 9 B, and Fig. 9 B is the fish-eye view of decollator plate.In another embodiment.Cave, most hollow cathode chamber is consistent in the decollator plate, and towards the marginal existence of decollator plate some bigger hollow cathode chamber cave C2 is arranged, the decollator fish-eye view shown in Fig. 9 C.

Plasma body and processing procedure heterogeneity can increase progressively by central zone to the fringe region from the decollator plate volume in cave, hollow cathode chamber or surface-area or above-mentioned both make up to improve.

Another kind of variation rete deposit thickness and the inhomogeneity mode of character are by changing the decollator hole density on the decollator plate, are identical and keep the decollator hole.The density of decollator hole is to calculate divided by the total surface area in the downstream side 804 of decollator plate by the total surface area of the hole of the shrinkage pool 812 that will intersect at downstream side 804.The density of decollator hole can be changed to about 100% by about 10%, and is preferably by about 30% and is changed to about 100%.For " dome-shaped " or the central thick problem that reduce silicon nitride film layer, decollator hole density should be lowered (with respect to the external region) in the central zone, to reduce the plasma density of interior region.About the variation of volume density and surface area density, cathode chamber density should be progressive and smooth-going to the external region from interior region as previously mentioned, to guarantee consistent and smooth-going deposition and membranous layer property curve.Fig. 9 D shows that (regional A) is high gradual change for being low to moderate edge (regional B) to decollator hole density from the center.The decollator hole can reduce the plasma density of central zone and " dome-shaped " problem of minimizing silicon nitride film layer than low density in the central zone.The configuration of decollator hole only is in order to demonstrate from the center to the cumulative hole density at edge among Fig. 9 D.The present invention is applicable to any decollator hole configuration and pattern.The variable density concept also can be combined with decollator hole design change, with improvement center to edge homogeneity.When the density of gas passage is changed to reach plasma uniformity, the hollow cathode chamber between downstream end every can be above 0.6 inch.

Gas distributor with bendability

About Fig. 2,3 and 4 discussion, when deposition α-Si rete was on big base material, the use of hollow cathode gradient gas decollator plate possibly can't be eliminated the film thickness uniformity problem as aforementioned.This is opposite with the silicon nitride film layer homogeneity question, and the silicon nitride film layer homogeneity question is for greater than 1200000mm ²Base material can be eliminated by the gas distributor plate that use implements HCG.By Fig. 2,3 and 4, it can be seen, on the contrary by the influence consumingly of electrode space institute, changing electrode space is that to have changed center that the comfortable center of curve has good membranous layer property thick thick and at the poor membranous layer property at center to the edge from 0.800 inch to 0.550 inch by the thickness curve of the amorphous silicon film layer of PECVD deposition.See also Fig. 5 and Fig. 8, electrode space is to be defined as the downstream side 804 of decollator plate 558 and the distance between the base material 540.For the α-Si rete on big base material, what believe is that during base material treatment, plasma density can increase at the center near the PECVD chamber for the larger electrode interval, has therefore changed thicknesses of layers and membranous layer property curve.

, the narrower electrode space in the PECVD chamber has preferable character because having formed amorphous silicon film layer at the base material edge, and quite wide electrode space has formed rete and has had preferable character at the base material center, and the decollator plate that therefore combines two interval benefits is to be provided.This is to reach by incorporating wideer and narrower interval to electrode itself into, that is electrode is to be suitable for wideer electrode to be provided and to provide narrower electrode at the base material edge with the central zone at base material.Therefore, greater than 1200000mm ²Base material can be deposited at whole base material and have the amorphous silicon film layer that can accept thickness and the equal property of membranous layer property.This be by with decollator plate/electrode in the downstream or the process volume side be configured to bendability, rather than flat and be parallel to the base material of handling basically.By incorporating into wideer and the narrower electrode that is interval in itself, the processing procedure form of α-Si can be improved significantly.

Figure 10 is the sectional view that illustrates an embodiment of the gas distributor plate 1001 with bendability, and gas distributor plate 1001 goes in the PECVD chamber.Do not show on the figure that gas passage 56 is in order to oversimplify.The downstream side 804 of decollator plate 1001 has bendability, and in this embodiment, the upstream side 802 of decollator plate 1001 is smooth basically.Perhaps, the upstream side 802 of decollator plate 1001 also can have bendability, for example when decollator 1001 be when using crooked annealing mounting block to form, these will be following being described and with reference to the 12nd and 13 figure.Also demonstrate the maximum displacement between the surface of the curved surface in downstream side 804 and imaginary smooth downstream side 804a on the figure.

As previously mentioned, in order to improve the homogeneity of silicon nitride film layer, for the hollow cathode gradient, be to have to be implemented in cave, hollow cathode chamber volume density on the gas distributor surface, hollow cathode surf zone density, and the gradual change of cavity cave density.This has been avoided silicon nitride film layer because the heterogeneity that the unexpected variation of process volume ionic medium volume density causes wherein should change suddenly and be caused by too big hollow cathode gradient.What believe is, same principle also is applied in for thicknesses of layers and the membranous layer property homogeneity of improving amorphous silicon film layer via electrode/decollator plate, and wherein this electrode/decollator plate has the electrode space of the variation above base material.Therefore, the narrow interval region of top, comfortable base material edge to the transition of the wideer a little interval region above the base material center is preferably smooth-going and progressive.Be to be preferably indent basically with, the downstream side 804 of decollator 1001, that is be to be close to base material and smooth-going height point or the summit 1005 that transits to above the base material center relatively at the edge.

For having the arc on summit 1005, this summit 1005 is the tops that approximately are positioned at the base material central point to the bendability in downstream side 804 haply.Summit 1005 has defined the maximum displacement between the surface of the curved surface in downstream side 804 and imaginary smooth downstream side 804a, as shown in figure 10.In preferred embodiment, this arc has the bendability corresponding to round or oval section, as shown in figure 10.This has guaranteed the smooth-going transition of electrode space by edge to the center of decollator, and allows this shape easily to be quantized.In other embodiments, the different methods of describing crooked downstream side 804 can be used.On the one hand, the line section can be described arc, shown in Figure 10 A.In this regard, the summit 1005 of decollator 1002 remains the top that is located substantially on the base material central point, and electrode space increases to the center by the edge of decollator.In other respects, arc can be by being described except line, circle or other oval mathematical functions, for example index, secondary, three times, sinusoidal, hyperbolic line or other geometric functions.In all respects, summit 1005 is to be located substantially on base material central point top, and electrode space increases to the center by the edge of decollator.

In another configuration, the whole surface in downstream side 804 does not have bendability, shown in Figure 10 B.The downstream side 804 of decollator 1003 includes smooth basically zone 1007 in decollator 1003 edges.For other configurations of the present invention, the curved section 1007a in downstream side 804 can be described by the section of line, circle, ellipse or other above-mentioned mathematical functions.The same with aforementioned other aspects, summit 1005 is to be located substantially on base material central point top, and electrode space increases to the center by the edge of decollator.

The size of the maximum displacement between the surface in crooked downstream side 804 and the surface of imaginary smooth downstream side 804a is little with respect to decollator plate 1001 sizes.On the one hand, maximum displacement 1004 is be no more than the characteristic length of decollator about 3%, is preferably between about 0.01% to about 0.30%.For relatively displacement 1004 and rectangle or circular decollator, characteristic length is regarded as " equivalent redius ".For circular decollator, equivalent redius equals the radius of this decollator.For square or rectangle decollator, equivalent redius is cornerwise 1/2nd.Be with, in the decollator situation of 2200mm * 1870mm, equivalent redius is 1440mm, and wishes displacement 1004 about 4.3mm from the maximum in the crooked downstream side 804 of imaginary smooth downstream side 804a.

Bendability that the it should be noted that downstream side 804 specific PECVD chamber in the processing procedure that is of value to the deposited amorphous silicon film that do not need accurately to match; No matter electrode shape why, the processing procedure adjustment of other process parameter has needs, with the homogeneity optimizing with thicknesses of layers and the membranous layer property of rete.The advantage that use has the electrode in crooked downstream side is, this can increase the processing procedure form significantly to α-Si membranous layer property, make become in the big high-quality amorphous silicon film layer of base material up stroke easier, and more reliable to a large amount of manufacturings.In some cases, the electrode with bendability needs, and can to accept α-Si rete more possible so that form.

In another embodiment, the wideer electrode space in the decollator central zone is that the bendability that sees through substrate support reaches.On the one hand, shown in Figure 10 C, decollator plate 1010 has smooth basically downstream side 804, and substrate support 1011 has the bendability of tool maximum displacement 1001.For substrate support 1011, maximum displacement 1004 is to be defined as distance between substrate support curved surface 1012 and the imaginary smooth substrate support surface 1012a, shown in Figure 10 C.Of the present invention in this respect when using smooth basically decollator plate, wide interval, central zone and narrow fringe region interval have been allowed, be used to deposit that α-the Si rete in another aspect with expectation, each of decollator plate and substrate support can have bendability, wherein use those bendabilities can reach desirable wide central zone at interval with narrow edge interregional every.Be to be shown among Figure 10 D in this respect.The substrate support curved surface 1015 that the curved downstream surface 1016 of decollator plate 1013 has than substrate support 1014 has more significant bendability.Owing to this reason, central zone electrode space 1017 is greater than fringe region electrode space 1018.Be with, when decollator plate and substrate support had bendability, desirable wide central zone was interregional every being reached with narrow edge at interval.

Figure 11 show to use when to have tool maximum displacement 1004 be 0.100 inch the decollator plate of bendability the

thickness curve

1101 and 1102 of amorphous silicon film layer on the glass baseplate of 2200mm width.When depositing this rete, electrode space is 0.650 inch.The processing procedure situation that deposits during this rete is: 10000sccm SiH ₄Gas flow rate, 36000sccm H ₂Gas flow rate, 10000 watts of radio-frequency plasma power, 2.5 holder ear chamber pressures, with the base material temperature of 340 ℃ (interior substrate heater) to 360 ℃ (outer substrate heater).The abscissa representative is along the position of each thickness measurement of the profile of 2200mm length base material, and unit is millimeter.Ordinate represents amorphous silicon film and is deposited upon sedimentation velocity on the base material, and unit is

Two data sets are to be drawn on Figure 11, and data set 1101 is square, and data set 1102 is diamond.The sedimentation velocity curve that data set 1101 and 1102 representatives measure along each diagonal lines of base material.The difference of this two curve is negligible, and this is meaning in decollator length is the constant thickness curve.

The thicknesses of layers curve of Figure 11 relatively is the obvious improvement that demonstrates thickness evenness with respect to the qualitative of curve of the 2nd, 3 and 4 figure, when using when smooth HCG decollator has the HCG decollator of bendability basically.This improvement is by quantitatively in table 1.

The thickness evenness that table 1 is deposited on the α-Si rete on the base material measures

With respect to for smooth decollator plate institute depositional coating, have high sedimentation velocity and have the homogeneity of improvement with the rete that decollator was deposited with bendability.

On the one hand, the PECVD gas distributor has crooked downstream side and does not have the hollow cathode gradient.This decollator has improved be deposited on greater than about 1200000mm ²The film thickness uniformity of α on the base material-Si rete and membranous layer property homogeneity.In another aspect, the PECVD gas distributor has crooked downstream side and hollow cathode gradient.This decollator can be used to handle silicon nitride or α-Si rete.This has reduced the manufacturing cost of PECVD chamber, and has increased the chamber suitability, that is chamber can be used for deposited silicon nitride or α-Si rete and do not need to change the gas distributor plate.

Manufacture method

Be to be difficult to and repeatedly to make for the treatment of the decollator plate greater than the base material of about 1000mm * 1200mm.Desirable shape and decollator to decollator may have considerable change.For not being basically that smooth decollator plate (decollator that for example has curved downstream surface) is especially true.(for example α-Si), because film thickness uniformity and membranous layer property homogeneity are to depend upon electrode space consumingly, minimizing may be very important in the variation between final bendability and the desired shape after the manufacturing at the decollator plate for some thin film layers.The variation that reduces between different (nominally but identical) chambers also is very important.Method is to be provided to allow to repeat and mode with low cost is made crooked decollator for the PECVD chamber.

In one embodiment, the desired bendability in the downstream side of gas distributor plate is to form by hot processing procedure, and wherein in this hot processing procedure, the decollator plate is the shape that is bent to accord with crooked annealing mounting block.This bending annealing mounting block is the metal sheet that is machined to desired bendability, and is used to crooked many decollators.

Figure 12 illustrates use crooked annealing mounting block and is used for decollator annealing process 1200 with the schema of crooked decollator plate to desired bendability.

In step 1201, the decollator plate in alignment with and be placed on the crooked annealing mounting block.The downstream side of decollator should be contacted with the annealing mounting block.

In step 1202, the surperficial protected material of decollator plate covers, with damage and the pollution of avoiding the self-annealing weight.Protecting materials must be cleaning, quite resilient and heat resistanceheat resistant.The aluminum slice of one example for electroplating of the supercoat that can use.

In step 1203, the decollator plate is loaded need be in order to the suitable weight that during annealing process decollator is out of shape plasticly.This weight must be distributed on the decollator, thereby makes during annealing process, and the decollator plate fully accords with the shape of crooked annealing mounting block.Haply, weight should be applied to the central point of decollator earlier, then along diagonal lines be distributed on every side.Figure 13 is the exemplary configuration that shows weight " W ", and wherein those weights " W " are the aluminium decollator plate " D " of 1.44 inch thickness for annealing 2200mm * 1870mm.The amount of the weight that uses with distribute and can change, be bendability, and time of annealing process and the temperature and decide of size, thickness and the composition according to the decollator plate, crooked annealing mounting block.Yet those of ordinary skills can determine these factors easily.

In step 1204, the temperature of decollator plate is enough slowly to be increased to the annealing temperature of hope with the speed of avoiding warpage.Rate of rise in temperature and annealing temperature can change because they be size, thickness and the composition according to the decollator plate, crooked annealing mounting block bendability, decide with time of annealing process and temperature.Yet those skilled in the art can determine these factors easily.In the example of aforementioned 2200mm * 1870mm aluminium decollator plate, suitable rate of rise in temperature is no more than per hour 40 ℃, and to fiery temperature about 410 ℃.

In step 1205, the decollator plate is to be annealed, that is maintains annealing temperature and continue the required time so that the decollator plate is out of shape and accurately accords with the shape of crooked annealing mounting block plasticly.As previously mentioned, desirable annealing time can change, and this is to decide according to many factors.This can be determined easily by those skilled in the art institute.In the aluminium decollator plate of previous exemplary, annealing time is no more than 4 hours.

In step 1206, the temperature of decollator plate is enough slowly to be reduced to room temperature with the speed of avoiding warpage.As previously mentioned, this can change for different decollator plates.For the aluminium decollator of previous exemplary, speed of cooling is no more than per hour 25 ℃.

In step 1207, after the decollator plate reached room temperature, weight then was removed.

On the one hand, the decollator plate does not have the hollow cathode gradient, and gas passage is substantially the same with cave, hollow cathode chamber.In another aspect, the decollator plate has curved downstream surface and hollow cathode gradient.In arbitrary situation, the processing of gas passage (this is simplified significantly for smooth basically surface) is preferably before annealing process and is performed.Though be not cost-effective haply, the processing of gas passage also can be performed after annealing/crooked processing procedure.The processing of gas passage can (numerically controlled NC), but because have many gas passages on the big decollator plate, be preferably and uses NC processing for manual or Numerical Control.

In another embodiment, the desired bendability in the downstream side of gas distributor plate is to remove by processing that material requested forms on the downstream side of decollator, and this is to finish by the metal removal processing procedure that uses milling well known in the art or lathe form.On the one hand, the processing of gas passage is after forming curved surface and be performed.The processing of gas passage can (numerically controlled NC), but because have many gas passages on the big decollator plate, be preferably and uses NC processing for manual or Numerical Control.

In another embodiment, gas passage is to be machined in earlier in the decollator plate, and then first bendability is to be machined in the downstream side of gas distributor plate, and last decollator plate is annealed into final bendability.This embodiment provides and has saved cost with the method for the manufacture of the gas dispersion plate, wherein this gas dispersion plate comprise the hollow cathode gradient with the bendability that is used for homogeneity ground deposited silicon nitride and indent basically to be used for homogeneity ground deposition α-Si.Identical gas passage is to be machined in the smooth basically surface on the typical case.To curved surface, this more can save cost and can repeatedly make with respect to the gas passage of processing the changeable degree of depth and diameter.Then, first bendability is to use the metal removal processing procedure of milling well known in the art or lathe form to be machined in the downstream side of gas distributor plate, to set up cave, desirable hollow cathode chamber gradient on the decollator surface; When the center near the decollator plate had more materials to be removed, therefore cave, the hollow cathode chamber size of the generation of identical gas passage originally was reduced.The gas distributor plate then is formed the bendability of final hope by aforementioned annealing/crooked processing procedure.This final step is necessary, seldom is same as the bendability of wishing to be used for homogeneity deposition α-Si because need be in order to the bendability of setting up desired hollow cathode gradient.

Include the preferable enforcement of teaching of the present invention though this paper has shown and described some in detail, those of ordinary skills can easily envision many other and still comprise the embodiment of the change of these teachings.

Though aforementioned is to focus on embodiments of the invention, of the present invention other can be envisioned with further embodiment, and its scope is determined by the claim scope.

Claims

1. device comprises:

Treatment chamber;

Substrate support is arranged in this treatment chamber;

The decollator plate, in this treatment chamber, arrange with respect to this substrate support, this decollator plate have in the face of this substrate support and basically the downstream of crooked upstream side and indent survey and several extend through the gas passage of this decollator plate, each gas passage wherein has cave, hollow cathode chamber, this cave, hollow cathode chamber is the downstream side of contiguous this indent basically, and the interval between this decollator plate and this substrate support changes between 0.800 inch to 0.550 inch.

2. device as claimed in claim 1 is characterized in that, the volume in this cave, hollow cathode chamber or surface-area increase from center to the edge of this decollator plate.

3. device as claimed in claim 2 is characterized in that, the downstream side of this indent has a summit, and this summit is positioned on the center near this substrate support.

4. device as claimed in claim 1, it is characterized in that, each cave, hollow cathode chamber has hollow cathode chamber cave volume density and cave, hollow cathode chamber surface area density, and wherein this hollow cathode chamber cave volume density and cave, hollow cathode chamber surface area density increase from center to the edge of this decollator plate.

5. device as claimed in claim 1 is characterized in that, each cave, hollow cathode chamber has an open-angle, and this open-angle is between 10 degree and 50 degree.

6. device as claimed in claim 1 is characterized in that, the interval between the adjacent gas passage is not more than 0.6 inch.

7. device as claimed in claim 1 is characterized in that, the surface that the downstream of this indent is surveyed comprises the no decoration aluminium of electroless plating.

8. device as claimed in claim 1 is characterized in that, this decollator plate is rectangle.

9. device comprises:

Treatment chamber:

Substrate support is arranged in this treatment chamber;

The decollator plate, in this treatment chamber, arrange with respect to this substrate support, this decollator plate has in the face of the downstream side of this substrate support with respect to the upstream side in this downstream side, this upstream side has a bendability, this decollator plate has the gas passage that several extend through this decollator plate, each gas passage wherein has cave, hollow cathode chamber, and this cave, hollow cathode chamber is contiguous this downstream side basically.

10. device as claimed in claim 9 is characterized in that, each cave, hollow cathode chamber has an open-angle, and this open-angle is between 10 degree and 50 degree.

11. device as claimed in claim 9 is characterized in that, the interval between the adjacent gas passage is not more than 0.6 inch.

12. device as claimed in claim 9 is characterized in that, this surface with upstream side of bendability comprises the no decoration aluminium of electroless plating.

13. device as claimed in claim 9 is characterized in that, this decollator plate is rectangle.