CN102044483A - Groove forming method - Google Patents
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- CN102044483A CN102044483A CN 200910197454 CN200910197454A CN102044483A CN 102044483 A CN102044483 A CN 102044483A CN 200910197454 CN200910197454 CN 200910197454 CN 200910197454 A CN200910197454 A CN 200910197454A CN 102044483 A CN102044483 A CN 102044483A
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Abstract
The invention discloses a groove forming method, which comprises the following steps of: providing a substrate; forming a medium layer on the surface of the substrate; forming a protective layer on the surface of the medium layer; forming a photoresist graph corresponding to a groove on the surface of the protective layer; etching the protective layer by using the photoresist graph as a mask till the medium layer is exposed; etching the medium layer of the first thickness by using the photoresist graph and the protective layer as masks and adopting a first etching process; and etching the medium layer of the second thickness by using the photoresist graph and the protective layer as masks and adopting a second etching process corresponding to the first etching process so as to form the groove, wherein the uniformity of the first etching process and the second etching process at the edge zone and the central zone of the substrate is complementary. The method can improve the uniformity of the etching process.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of groove formation method.
Background technology
The large scale integrated circuit manufacturing process is a kind of plane manufacture craft, and it forms a large amount of various types of semiconductor device on same substrate, and is connected to each other to have complete function.In ic manufacturing process, often need on substrate, form a large amount of grooves, the groove of formation can form metal connecting line by filling metal.At for example application number is to find more relevant informations about the formation groove in the Chinese patent application of 200610159332.x.
The formation method of existing groove may further comprise the steps, with reference to figure 1:
Step S11 provides the substrate that is formed with dielectric layer;
Step S12 forms the photoresist figure on described dielectric layer;
Step S13 is a mask with described photoresist figure, adopts plasma etching industrial etching dielectric layer, forms groove.
In the ic manufacturing process of reality; usually can be at the diverse location of substrate; for example the marginal position of the center of substrate, substrate forms the groove with spline structure; and because the limitation of the homogeneity of existing etching technics; in same etching technics; the marginal position speed of etching of the center of substrate, substrate is inconsistent; make groove that same etching technics forms different, thereby cause the groove of follow-up formation to differ greatly at substrate diverse location electric property in the marginal position degree of depth of the center of substrate and substrate.
Summary of the invention
The technical problem that the present invention solves is that the etching technics homogeneity of formation groove is poor.
For addressing the above problem, the invention provides a kind of groove formation method, comprising: substrate is provided; Form dielectric layer at described substrate surface; Form protective layer on described dielectric layer surface; Form the photoresist figure corresponding on the protective layer surface with groove; With described photoresist figure is mask, and the etching protective layer is until exposing dielectric layer; With described photoresist figure and described protective layer is mask, adopts the dielectric layer of the first etching technics etching, first thickness; With described photoresist figure and described protective layer is mask, adopts the dielectric layer of second etching technics etching second thickness corresponding with first etching technics, forms groove; Described first etching technics and second etching technics homogeneity in substrate edge area and substrate center zone is a complementary relationship.
Optionally, described dielectric layer is single coating or multiple-level stack structure.
Optionally, described protective layer material is selected from the silica that nitrogen mixes.
Optionally, the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
Optionally, the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and substrate bias power is 400 watts to 600 watts, and frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, described first thickness is 1/4 to 2/3 of described gash depth.
Optionally, described second thickness is 1/3 to 3/4 of described gash depth.
Compared with prior art, the present invention has the following advantages: the present invention has adopted first thickness of the first etching technics etching dielectric layer, adopted second thickness of the second etching technics etching dielectric layer to form groove, thereby make that the groove that is positioned at the edges of substrate position is consistent with the gash depth that is positioned at the substrate center position, improved the homogeneity of etching technics.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is the block diagram of the formation method of existing groove;
Fig. 2 is the schematic flow sheet of an embodiment of groove formation method provided by the invention;
Fig. 3 to Fig. 9 is the process schematic diagram of an embodiment of groove formation method provided by the invention.
Embodiment
By background technology as can be known; in the ic manufacturing process of reality; usually can be at the diverse location of substrate; for example the marginal position of the center of substrate, substrate forms the groove with spline structure; and because the limitation of existing etching technics; in same etching technics, the marginal position speed of etching of the center of substrate, substrate is inconsistent, makes groove that same etching technics forms different in the marginal position degree of depth of the center of substrate and substrate.
The present inventor is through a large amount of experiments, find the center of described substrate, the marginal position speed of etching of substrate is inconsistent to be because in the plasma etch process, plasma causes in the distribution difference of substrate diverse location, specifically, plasma etching is that etching gas ionization under the effect of radio-frequency (RF) energy is become plasma, because the limitation of existing etching apparatus, plasma distributes at the substrate diverse location can be inhomogeneous, thereby make groove that same etching technics forms different in the marginal position degree of depth of the center of substrate and substrate.
For this reason, the present inventor provides a kind of groove formation method of optimization through a large amount of experiments, comprising:
Substrate is provided; Form dielectric layer at described substrate surface; Form protective layer on described dielectric layer surface; Form the photoresist figure corresponding on the protective layer surface with groove; With described photoresist figure is mask, and the etching protective layer is until exposing dielectric layer; With described photoresist figure and described protective layer is mask, adopts the dielectric layer of the first etching technics etching, first thickness; With described photoresist figure and described protective layer is mask, adopts the dielectric layer of second etching technics etching second thickness corresponding with first etching technics, forms groove; Described first etching technics and second etching technics homogeneity in substrate edge area and substrate center zone is a complementary relationship.
Optionally, described dielectric layer is single coating or multiple-level stack structure.
Optionally, described protective layer material is selected from the silica that nitrogen mixes.
Optionally, the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
Optionally, the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and substrate bias power is 400 watts to 600 watts, and frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, described first thickness is 1/4 to 2/3 of described gash depth.
Optionally, described second thickness is 1/3 to 3/4 of described gash depth.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 2 is the schematic flow sheet of an embodiment of groove formation method provided by the invention, and Fig. 3 to Fig. 9 is the schematic diagram of an embodiment of groove formation method provided by the invention.Below in conjunction with Fig. 2 to Fig. 9 groove formation method of the present invention is described.
Step S101 provides substrate.
With reference to figure 3, described substrate 100 can be substrate (part that comprises integrated circuit and other elements), the patterning of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate (SOI), epitaxial silicon substrate, section processes or the substrate that is not patterned.
Step S102 forms dielectric layer on described substrate 100 surfaces.
With reference to figure 4, described dielectric layer 110 is used for active area in the substrate 100 and the isolation between the active area perhaps are used for lead on the substrate 100 and the isolation between the lead, and the thickness of described dielectric layer 110 is 20 nanometer to 5000 nanometers.
Concrete described dielectric layer 110 can be before-metal medium layer (Pre-Metal Dielectric, PMD), also can be interlayer dielectric layer (Inter-Metal Dielectric, ILD), it needs to be noted that described dielectric layer can also be that single coating also can be the multiple-level stack structure.
Before-metal medium layer is to be deposited on the substrate with MOS device, utilize depositing operation to form, can form groove at subsequent technique in before-metal medium layer, form connecting hole with metal filled groove, described connecting hole is used for connecting the electrode of MOS device and the plain conductor of upper layer interconnects layer.
Interlayer dielectric layer is the dielectric layer of postchannel process between metal interconnecting layer, can form groove in the interlayer dielectric layer in subsequent technique, forms connecting hole with metal filled groove, and described connecting hole is used for connecting the lead of adjacent metal interconnects layer.
The material of described dielectric layer 110 is selected from SiO usually
2The perhaps SiO of Can Zaing
2USG (Undoped Silicon Glass for example, the silex glass that does not have doping), BPSG (Borophosphosilicate Glass, the silex glass of boron phosphorus doped), BSG (Borosilicate Glass, the silex glass of doped with boron), PSG (Phosphosilitcate Glass, the silex glass of Doping Phosphorus) etc.
Described dielectric layer 110 generally selects for use the dielectric material of low-k, the material of described dielectric layer 110 specifically to be selected from the carborundum (BLOK) that silica (Black Diamond) that fluorine silex glass (FSG), carbon mix and nitrogen mix at 130 nanometers and following process node.
The formation technology of described dielectric layer 110 can be any conventional vacuum coating technology, for example atomic deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) or the like are not here done and are given unnecessary details.
Step S103 forms protective layer on described dielectric layer 110 surfaces.
With reference to figure 5, described protective layer 120 materials are selected from the silica that nitrogen mixes, and described protective layer 120 compactness are good, can form better interface with dielectric layer 110, and can prevent that leaky from occurring.
Described protective layer 120 forms technology and can select the medium chemical vapor depsotition equipment for use; concrete technological parameter is: reaction temperature is 350 degrees centigrade to 450 degrees centigrade; chamber pressure is that 5 holders are to 7 holders; interresponse time is 8 millimeters to 12 millimeters; power is 160 watts to 200 watts; silane flow rate is that per minute 250 standard cubic centimeters are to per minute 350 standard cubic centimeters; the nitrous oxide flow is that per minute 800 standard cubic centimeters are to per minute 1000 standard cubic centimeters, until the protective layer 120 that forms 1000 dust to 1400 dust thickness.
Step S104 forms the photoresist figure corresponding with groove on described protective layer 120 surfaces.
With reference to figure 6, at described protective layer 120 surperficial spin coating photoresists, then by exposure with on the mask with the corresponding figure transfer of groove to photoresist, utilize developer solution that the photoresist of corresponding site is removed then, to form photoresist figure 130.
Step S105 is a mask with described photoresist figure, and the etching protective layer is until exposing dielectric layer.
With reference to figure 7, described etching technics can be known plasma etching or chemical reagent etching, in the present embodiment, is exemplary illustrated with the plasma etching.
Described etching technics is selected plasma etching equipment for use, and concrete technological parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow be per minute 50 standard cubic centimeters to per minute 80 standard cubic centimeters, with above-mentioned etching technics parameter, etching protective layer 120 is until exposing dielectric layer 110.
At etching protective layer 120 after exposing dielectric layer 110; existing etching technics can be that mask directly forms groove with described photoresist figure and described protective layer; because the limitation of existing etching technics; plasma distributes at the substrate diverse location can be inhomogeneous, thereby make groove that same etching technics forms different in the marginal position degree of depth of the center of substrate and substrate.
For this reason, the present inventor proposes a kind of improved technology, as described in step S 106; with reference to figure 8; with described photoresist figure 130 and described protective layer 120 is mask, adopts the dielectric layer 110 of the first etching technics etching, first thickness, forms groove 111 and groove 112.
The concrete parameter of described first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow be per minute 250 standard cubic centimeters to per minute 300 standard cubic centimeters, adopt the dielectric layer of above-mentioned etching technics etching first thickness.
Adopt the technology of above-mentioned optimization, described plasma has certain improvement in the uneven phenomenon of substrate diverse location distribution meeting, but after adopting the dielectric layer of the first etching technics etching, first thickness, described groove still has certain deviation at the substrate diverse location, still with reference to figure 8, the groove 111 and substrate center position II groove 112 degree of depth of edges of substrate position I have bigger difference.
For this reason; the present inventor is through a large amount of experiments; described etching technics is further optimized; as described in step S107; with reference to figure 9; with described photoresist figure 130 and described protective layer 120 is mask, adopts the dielectric layer 110 of second etching technics etching second thickness corresponding with first etching technics, forms groove 121 and groove 122.
The concrete parameter of described second etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power (Hpower) is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, and frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses, adopts the dielectric layer 110 of above-mentioned etching technics etching second thickness, forms groove 121 and groove 122.
Described first thickness is 1/3 to 3/4 of described gash depth.
It needs to be noted; it is 10 Gauss to 50 Gausses that above-mentioned technological parameter has been set fringe magnetic field intensity especially; described fringe magnetic field intensity can change the distribution of etching technics ionic medium body at substrate surface; thereby be mask with described photoresist figure 130 and described protective layer 120; adopt in the technical process of dielectric layer 110 of the second etching technics etching, second thickness; having corrected with described photoresist figure 130 and described protective layer 120 is mask; adopt the deviation of the dielectric layer 110 of the first etching technics etching, first thickness, thereby make that the groove 121 that is positioned at substrate center is identical with groove 121 degree of depth that are positioned at edges of substrate.
Also it needs to be noted; with described photoresist figure and described protective layer is mask; adopt the dielectric layer of the first etching technics etching, first thickness; form among the step S106 of groove: the concrete parameter of described first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs; substrate bias power (Hpower) is 400 watts to 600 watts; frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, and frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
So among the Dui Ying step S107; with described photoresist figure and described protective layer is mask; adopt the dielectric layer of second etching technics etching second thickness corresponding with first etching technics; the concrete parameter of second etching technics that forms groove is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs; frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts; frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow be per minute 250 standard cubic centimeters to per minute 300 standard cubic centimeters, adopt the dielectric layer of above-mentioned etching technics etching first thickness.
The present invention has adopted first thickness of the first etching technics etching dielectric layer, adopted second thickness formation groove with the corresponding second etching technics etching dielectric layer of first technology, thereby make that the groove that is positioned at the edges of substrate position is consistent with the gash depth that is positioned at the substrate center position, improved the homogeneity of etching technics.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. a groove formation method is characterized in that, comprising:
Substrate is provided;
Form dielectric layer at described substrate surface;
Form protective layer on described dielectric layer surface;
Form the photoresist figure corresponding on the protective layer surface with groove;
With described photoresist figure is mask, and the etching protective layer is until exposing dielectric layer;
With described photoresist figure and described protective layer is mask, adopts the dielectric layer of the first etching technics etching, first thickness;
With described photoresist figure and described protective layer is mask, adopts the dielectric layer of second etching technics etching second thickness corresponding with first etching technics, forms groove; Described first etching technics and second etching technics homogeneity in substrate edge area and substrate center zone is a complementary relationship.
2. groove formation method as claimed in claim 1 is characterized in that, described dielectric layer is single coating or multiple-level stack structure.
3. groove formation method as claimed in claim 1 is characterized in that, described protective layer material is selected from the silica that nitrogen mixes.
4. groove formation method as claimed in claim 1; it is characterized in that the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts; frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
5. groove formation method as claimed in claim 1, it is characterized in that the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
6. groove formation method as claimed in claim 5, it is characterized in that, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
7. groove formation method as claimed in claim 1, it is characterized in that, the concrete technological parameter of first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
8. groove formation method as claimed in claim 7, it is characterized in that, the concrete technological parameter of second etching technics corresponding with first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
9. groove formation method as claimed in claim 1 is characterized in that, described first thickness is 1/4 to 2/3 of described gash depth.
10. groove formation method as claimed in claim 1 is characterized in that, described second thickness is 1/3 to 3/4 of described gash depth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197454 CN102044483B (en) | 2009-10-20 | 2009-10-20 | Groove forming method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910197454 CN102044483B (en) | 2009-10-20 | 2009-10-20 | Groove forming method |
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| CN102044483A true CN102044483A (en) | 2011-05-04 |
| CN102044483B CN102044483B (en) | 2013-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910197454 Expired - Fee Related CN102044483B (en) | 2009-10-20 | 2009-10-20 | Groove forming method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420124A (en) * | 2011-05-26 | 2012-04-18 | 上海华力微电子有限公司 | Etching method of dielectric layer |
| CN103094111A (en) * | 2011-10-31 | 2013-05-08 | 无锡华润上华科技有限公司 | Double diffusion metal oxide semi-conductor (DMOS) device and manufacturing method thereof |
| CN104022206A (en) * | 2014-04-29 | 2014-09-03 | 华灿光电(苏州）有限公司 | Reworking method for LED epitaxial wafer with distributed Bragg reflector (DBR) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140421B (en) * | 2006-09-04 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method for forming a photoresist pattern |
| CN101459073B (en) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer |
| CN101459072B (en) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer and manufacturing wire laying slot |
-
2009
- 2009-10-20 CN CN 200910197454 patent/CN102044483B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102420124A (en) * | 2011-05-26 | 2012-04-18 | 上海华力微电子有限公司 | Etching method of dielectric layer |
| CN102420124B (en) * | 2011-05-26 | 2014-04-02 | 上海华力微电子有限公司 | Etching method of dielectric layer |
| CN103094111A (en) * | 2011-10-31 | 2013-05-08 | 无锡华润上华科技有限公司 | Double diffusion metal oxide semi-conductor (DMOS) device and manufacturing method thereof |
| CN103094111B (en) * | 2011-10-31 | 2016-04-06 | 无锡华润上华科技有限公司 | DMOS device and manufacture method thereof |
| CN104022206A (en) * | 2014-04-29 | 2014-09-03 | 华灿光电(苏州）有限公司 | Reworking method for LED epitaxial wafer with distributed Bragg reflector (DBR) |
| CN104022206B (en) * | 2014-04-29 | 2017-05-03 | 华灿光电(苏州）有限公司 | Reworking method for LED epitaxial wafer with distributed Bragg reflector (DBR) |
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| Publication number | Publication date |
|---|---|
| CN102044483B (en) | 2013-03-06 |
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