CN102044483B - Groove forming method - Google Patents
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- CN102044483B CN102044483B CN 200910197454 CN200910197454A CN102044483B CN 102044483 B CN102044483 B CN 102044483B CN 200910197454 CN200910197454 CN 200910197454 CN 200910197454 A CN200910197454 A CN 200910197454A CN 102044483 B CN102044483 B CN 102044483B
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Abstract
The invention discloses a groove forming method, which comprises the following steps of: providing a substrate; forming a medium layer on the surface of the substrate; forming a protective layer on the surface of the medium layer; forming a photoresist graph corresponding to a groove on the surface of the protective layer; etching the protective layer by using the photoresist graph as a mask till the medium layer is exposed; etching the medium layer of the first thickness by using the photoresist graph and the protective layer as masks and adopting a first etching process; and etching the medium layer of the second thickness by using the photoresist graph and the protective layer as masks and adopting a second etching process corresponding to the first etching process so as to form the groove, wherein the uniformity of the first etching process and the second etching process at the edge zone and the central zone of the substrate is complementary. The method can improve the uniformity of the etching process.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of groove forming method.
Background technology
The large scale integrated circuit manufacturing process is a kind of plane manufacture craft, and it forms a large amount of various types of semiconductor device at same substrate, and is connected to each other to have complete function.In ic manufacturing process, often need to form a large amount of grooves at substrate, the groove of formation can form metal connecting line by filling metal.For example application number be can also find in the Chinese patent application of 200610159332.x more about forming the relevant informations of groove.
The formation method of existing groove may further comprise the steps, with reference to figure 1:
Step S11 provides the substrate that is formed with dielectric layer;
Step S12 forms photoetching offset plate figure at described dielectric layer;
Step S13 take described photoetching offset plate figure as mask, adopts plasma etching industrial etching dielectric layer, forms groove.
In the ic manufacturing process of reality; usually can be at the diverse location of substrate; for example the marginal position of the center of substrate, substrate forms the groove of same structure; and because the limitation of the homogeneity of existing etching technics; in same etching technics; the speed of the marginal position etching of the center of substrate, substrate is inconsistent; so that the groove that same etching technics forms is different in the marginal position degree of depth of the center of substrate and substrate, thereby cause the groove of follow-up formation to differ greatly at substrate diverse location electric property.
Summary of the invention
The technical problem that the present invention solves is that the etching technics homogeneity of formation groove is poor.
For addressing the above problem, the invention provides a kind of groove forming method, comprising: substrate is provided; Form dielectric layer at described substrate surface; Form protective layer on described dielectric layer surface; Form the photoetching offset plate figure corresponding with groove at protective layer; Take described photoetching offset plate figure as mask, the etching protective layer is until expose dielectric layer; Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of the first etching technics etching the first thickness; Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of second etching technics etching second thickness corresponding with the first etching technics, form groove; Described the first etching technics and the second etching technics homogeneity in substrate edge area and substrate center zone is complementary relationship.
Optionally, described dielectric layer is single coating or multiple-level stack structure.
Optionally, described protective layer material is selected from the silica that nitrogen mixes.
Optionally, the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
Optionally, the concrete technology parameter of the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the first etching technics concrete technology parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and substrate bias power is 400 watts to 600 watts, and frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, described the first thickness is 1/4 to 2/3 of described gash depth.
Optionally, described the second thickness is 1/3 to 3/4 of described gash depth.
Compared with prior art, the present invention has the following advantages: the present invention has adopted the first thickness of the first etching technics etching dielectric layer, adopted the second thickness of the second etching technics etching dielectric layer to form groove, thereby so that it is consistent with the gash depth that is positioned at the substrate center position to be positioned at the groove of edges of substrate position, improved the homogeneity of etching technics.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the block diagram of the formation method of existing groove;
Fig. 2 is the schematic flow sheet of an embodiment of groove forming method provided by the invention;
Fig. 3 to Fig. 9 is the process schematic diagram of an embodiment of groove forming method provided by the invention.
Embodiment
By background technology as can be known; in the ic manufacturing process of reality; usually can be at the diverse location of substrate; for example the marginal position of the center of substrate, substrate forms the groove of same structure; and because the limitation of existing etching technics; in same etching technics, the speed of the marginal position etching of the center of substrate, substrate is inconsistent, so that the groove that same etching technics forms is different in the marginal position degree of depth of the center of substrate and substrate.
The present inventor is through a large amount of experiments, find the center of described substrate, the speed of the marginal position etching of substrate is inconsistent to be because in the plasma etch process, plasma causes in the distribution difference of substrate diverse location, specifically, plasma etching is that etching gas ionization under the effect of radio-frequency (RF) energy is become plasma, because the limitation of existing etching apparatus, plasma distributes at the substrate diverse location can be inhomogeneous, thereby so that the groove that same etching technics forms is different in the marginal position degree of depth of the center of substrate and substrate.
For this reason, the present inventor provides a kind of groove forming method of optimization through a large amount of experiments, comprising:
Substrate is provided; Form dielectric layer at described substrate surface; Form protective layer on described dielectric layer surface; Form the photoetching offset plate figure corresponding with groove at protective layer; Take described photoetching offset plate figure as mask, the etching protective layer is until expose dielectric layer; Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of the first etching technics etching the first thickness; Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of second etching technics etching second thickness corresponding with the first etching technics, form groove; Described the first etching technics and the second etching technics homogeneity in substrate edge area and substrate center zone is complementary relationship.
Optionally, described dielectric layer is single coating or multiple-level stack structure.
Optionally, described protective layer material is selected from the silica that nitrogen mixes.
Optionally, the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
Optionally, the concrete technology parameter of the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the first etching technics concrete technology parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and substrate bias power is 400 watts to 600 watts, and frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
Optionally, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
Optionally, described the first thickness is 1/4 to 2/3 of described gash depth.
Optionally, described the second thickness is 1/3 to 3/4 of described gash depth.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization in the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 2 is the schematic flow sheet of an embodiment of groove forming method provided by the invention, and Fig. 3 to Fig. 9 is the schematic diagram of an embodiment of groove forming method provided by the invention.Below in conjunction with Fig. 2 to Fig. 9 groove forming method of the present invention is described.
Step S101 provides substrate.
With reference to figure 3, described substrate 100 can be substrate (part that comprises integrated circuit and other elements), the patterning of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate (SOI), epitaxial silicon substrate, section processes or the substrate that is not patterned.
Step S102 forms dielectric layer on described substrate 100 surfaces.
With reference to figure 4, described dielectric layer 110 is used for the active area in the substrate 100 and the isolation between the active area perhaps are used for the wire on the substrate 100 and the isolation between the wire, and the thickness of described dielectric layer 110 is 20 nanometer to 5000 nanometers.
Concrete described dielectric layer 110 can be before-metal medium layer (Pre-Metal Dielectric, PMD), also can be interlayer dielectric layer (Inter-Metal Dielectric, ILD), it needs to be noted that described dielectric layer can also be that single coating also can be the multiple-level stack structure.
Before-metal medium layer is to be deposited on the substrate with MOS device, utilize depositing operation to form, can form groove at subsequent technique in before-metal medium layer, form connecting hole with metal filled groove, described connecting hole is used for connecting the electrode of MOS device and the plain conductor of upper layer interconnects layer.
Interlayer dielectric layer is the dielectric layer of postchannel process between metal interconnecting layer, can form groove in the interlayer dielectric layer in subsequent technique, forms connecting hole with metal filled groove, and described connecting hole is used for connecting the wire of adjacent metal interconnects layer.
The material of described dielectric layer 110 is selected from SiO usually
2The SiO that perhaps mixes
2USG (Undoped Silicon Glass for example, the silex glass that does not have doping), BPSG (BorophosphosilicateGlass, the silex glass of boron phosphorus doped), BSG (Borosilicate Glass, the silex glass of doped with boron), PSG (Phosphosilitcate Glass, the silex glass of Doping Phosphorus) etc.
Described dielectric layer 110 generally selects the dielectric material of low-k, the material of described dielectric layer 110 specifically to be selected from the carborundum (BLOK) that silica (Black Diamond) that fluorine silex glass (FSG), carbon mix and nitrogen mix at 130 nanometers and following process node.
The formation technique of described dielectric layer 110 can be any conventional vacuum coating technology, for example atomic deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) etc. are not here done and are given unnecessary details.
Step S103 forms protective layer on described dielectric layer 110 surfaces.
With reference to figure 5, described protective layer 120 materials are selected from the silica that nitrogen mixes, and described protective layer 120 compactness are good, can form better interface with dielectric layer 110, and can prevent that leaky from occurring.
Described protective layer 120 forms technique and can select the medium chemical vapor depsotition equipment; the concrete technology parameter is: reaction temperature is 350 degrees centigrade to 450 degrees centigrade; chamber pressure is that 5 holders are to 7 holders; interresponse time is 8 millimeters to 12 millimeters; power is 160 watts to 200 watts; silane flow rate is that per minute 250 standard cubic centimeters are to per minute 350 standard cubic centimeters; the nitrous oxide flow is that per minute 800 standard cubic centimeters are to per minute 1000 standard cubic centimeters, until form the protective layer 120 of 1000 dust to 1400 dust thickness.
Step S104 forms the photoetching offset plate figure corresponding with groove on described protective layer 120 surfaces.
With reference to figure 6, at described protective layer 120 surperficial spin coating photoresists, then by exposure the figure corresponding with groove on the mask plate transferred on the photoresist, then utilize developer solution that the photoresist of corresponding site is removed, to form photoetching offset plate figure 130.
Step S105, take described photoetching offset plate figure as mask, the etching protective layer is until expose dielectric layer.
With reference to figure 7, described etching technics can be known plasma etching or chemical reagent etching, in the present embodiment, and take plasma etching as exemplary illustrated.
Described etching technics is selected plasma etching equipment, and the concrete technology parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow be per minute 50 standard cubic centimeters to per minute 80 standard cubic centimeters, with above-mentioned etching technics parameter, etching protective layer 120 is until expose dielectric layer 110.
At etching protective layer 120 until after exposing dielectric layer 110; existing etching technics can directly form groove take described photoetching offset plate figure and described protective layer as mask; because the limitation of existing etching technics; plasma distributes at the substrate diverse location can be inhomogeneous, thereby so that the groove that same etching technics forms is different in the marginal position degree of depth of the center of substrate and substrate.
For this reason, the present inventor proposes a kind of modified processing route, as described in step S106; with reference to figure 8; take described photoetching offset plate figure 130 and described protective layer 120 as mask, adopt the dielectric layer 110 of the first etching technics etching the first thickness, form groove 111 and groove 112.
Described the first etching technics design parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, and frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow be per minute 250 standard cubic centimeters to per minute 300 standard cubic centimeters, adopt the dielectric layer of above-mentioned etching technics etching the first thickness.
Adopt the technique of above-mentioned optimization, described plasma has certain improvement in the inhomogeneous phenomenon of substrate diverse location distribution meeting, but after adopting the dielectric layer of the first etching technics etching the first thickness, described groove still has certain deviation at the substrate diverse location, still with reference to figure 8, groove 111 and substrate center position II groove 112 degree of depth of edges of substrate position I have larger difference.
For this reason; the present inventor is through a large amount of experiments; described etching technics is further optimized; as described in step S107; with reference to figure 9; take described photoetching offset plate figure 130 and described protective layer 120 as mask, adopt the dielectric layer 110 of second etching technics etching second thickness corresponding with the first etching technics, form groove 121 and groove 122.
Described the second etching technics design parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power (Hpower) is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, and frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses, adopts the dielectric layer 110 of above-mentioned etching technics etching the second thickness, forms groove 121 and groove 122.
Described the first thickness is 1/3 to 3/4 of described gash depth.
It needs to be noted; it is 10 Gauss to 50 Gausses that above-mentioned technological parameter has been set fringe magnetic field intensity especially; described fringe magnetic field intensity can change the etching technics applying plasma in the distribution of substrate surface; thereby take described photoetching offset plate figure 130 and described protective layer 120 as mask; adopt in the technical process of dielectric layer 110 of the second etching technics etching the second thickness; corrected take described photoetching offset plate figure 130 and described protective layer 120 as mask; adopt the deviation of the dielectric layer 110 of the first etching technics etching the first thickness, thereby to be positioned at the groove 121 of substrate center identical with groove 121 degree of depth that are positioned at edges of substrate.
Also it needs to be noted; take described photoetching offset plate figure and described protective layer as mask; adopt the dielectric layer of the first etching technics etching the first thickness; form among the step S106 of groove: described the first etching technics design parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs; substrate bias power (Hpower) is 400 watts to 600 watts; frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, and frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
So among the corresponding step S107; take described photoetching offset plate figure and described protective layer as mask; adopt the dielectric layer of second etching technics etching second thickness corresponding with the first etching technics; the the second etching technics design parameter that forms groove is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs; frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts; frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow be per minute 250 standard cubic centimeters to per minute 300 standard cubic centimeters, adopt the dielectric layer of above-mentioned etching technics etching the first thickness.
The present invention has adopted the first thickness of the first etching technics etching dielectric layer, adopted the second thickness of the second etching technics etching dielectric layer corresponding with the first technique to form groove, thereby so that it is consistent with the gash depth that is positioned at the substrate center position to be positioned at the groove of edges of substrate position, improved the homogeneity of etching technics.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (10)
1. a groove forming method is characterized in that, comprising:
Substrate is provided;
Form dielectric layer at described substrate surface;
Form protective layer on described dielectric layer surface;
Form the photoetching offset plate figure corresponding with groove at protective layer;
Take described photoetching offset plate figure as mask, the etching protective layer is until expose dielectric layer;
Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of the first etching technics etching the first thickness, and the first thickness is less than the thickness of dielectric layer;
Take described photoetching offset plate figure and described protective layer as mask, adopt the dielectric layer of second etching technics etching second thickness corresponding with the first etching technics, form groove; Described the first etching technics and the second etching technics homogeneity in substrate edge area and substrate center zone is complementary relationship, and wherein, it is 10 Gauss to 50 Gausses that fringe magnetic field intensity is set in described the first etching technics or the second etching technics.
2. groove forming method as claimed in claim 1 is characterized in that, described dielectric layer is single coating or multiple-level stack structure.
3. groove forming method as claimed in claim 1 is characterized in that, described protective layer material is selected from the silica that nitrogen mixes.
4. groove forming method as claimed in claim 1; it is characterized in that the technological parameter of the described protective layer of etching is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 500 watts to 1000 watts; frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 80 standard cubic centimeters are to per minute 120 standard cubic centimeters, CHF
3Flow is that per minute 50 standard cubic centimeters are to per minute 80 standard cubic centimeters.
5. groove forming method as claimed in claim 1, it is characterized in that the concrete technology parameter of the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, and frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
6. groove forming method as claimed in claim 5, it is characterized in that, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
7. groove forming method as claimed in claim 1, it is characterized in that, the first etching technics concrete technology parameter is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, substrate bias power is 400 watts to 600 watts, frequency is that the radio-frequency power of 13.6M is 500 watts to 900 watts, frequency is that the radio-frequency power of 2M is 100 watts to 400 watts, CF
4Flow is that per minute 100 standard cubic centimeters are to per minute 150 standard cubic centimeters, C
4F
8Flow be per minute 30 standard cubic centimeters to per minute 80 standard cubic centimeters, fringe magnetic field intensity is 10 Gauss to 50 Gausses.
8. groove forming method as claimed in claim 7, it is characterized in that, the concrete technology parameter of second etching technics corresponding with the first etching technics is: the etching apparatus chamber pressure is 30 millitorr to 60 millitorrs, frequency is that the radio-frequency power of 13.6M is 800 watts to 1200 watts, frequency is that the radio-frequency power of 2M is 200 watts to 400 watts, CF
4Flow is that per minute 250 standard cubic centimeters are to per minute 300 standard cubic centimeters.
9. groove forming method as claimed in claim 1 is characterized in that, described the first thickness is 1/4 to 2/3 of described gash depth.
10. groove forming method as claimed in claim 1 is characterized in that, described the second thickness is 1/3 to 3/4 of described gash depth.
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| CN 200910197454 CN102044483B (en) | 2009-10-20 | 2009-10-20 | Groove forming method |
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| CN 200910197454 CN102044483B (en) | 2009-10-20 | 2009-10-20 | Groove forming method |
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| CN102420124B (en) * | 2011-05-26 | 2014-04-02 | 上海华力微电子有限公司 | Etching method of dielectric layer |
| CN103094111B (en) * | 2011-10-31 | 2016-04-06 | 无锡华润上华科技有限公司 | DMOS device and manufacture method thereof |
| CN104022206B (en) * | 2014-04-29 | 2017-05-03 | 华灿光电(苏州）有限公司 | Reworking method for LED epitaxial wafer with distributed Bragg reflector (DBR) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140421A (en) * | 2006-09-04 | 2008-03-12 | 中芯国际集成电路制造(上海)有限公司 | Method for forming a photoresist pattern |
| CN101459072A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer and manufacturing wire laying slot |
| CN101459073A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140421A (en) * | 2006-09-04 | 2008-03-12 | 中芯国际集成电路制造(上海)有限公司 | Method for forming a photoresist pattern |
| CN101459072A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer and manufacturing wire laying slot |
| CN101459073A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for etching bottom layer anti-reflection layer |
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