WO2019109207A1 - Tête de distribution partiellement anodisée - Google Patents

Tête de distribution partiellement anodisée Download PDF

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Publication number
WO2019109207A1
WO2019109207A1 PCT/CN2017/114443 CN2017114443W WO2019109207A1 WO 2019109207 A1 WO2019109207 A1 WO 2019109207A1 CN 2017114443 W CN2017114443 W CN 2017114443W WO 2019109207 A1 WO2019109207 A1 WO 2019109207A1
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WO
WIPO (PCT)
Prior art keywords
showerhead
surface area
anodized layer
peripheral region
susceptor
Prior art date
Application number
PCT/CN2017/114443
Other languages
English (en)
Inventor
Yue Yu
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020207019208A priority Critical patent/KR20200094781A/ko
Priority to CN201780098113.1A priority patent/CN111557040A/zh
Priority to PCT/CN2017/114443 priority patent/WO2019109207A1/fr
Publication of WO2019109207A1 publication Critical patent/WO2019109207A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • Embodiments disclosed herein generally relate to an apparatus having a partially anodized gas distribution showerhead.
  • PECVD Plasma enhanced chemical vapor deposition
  • substrates such as semiconductor substrates, solar panel substrates, flat panel display (FPD) substrates, organic light emitting display (OLED) substrates, and others.
  • PECVD is generally accomplished by introducing a processing gas from a gas distribution showerhead into a vacuum chamber having a substrate disposed on a susceptor.
  • the processing gas is energized into a plasma by applying an RF current to an electrode in the chamber from one or more RF sources coupled to the chamber.
  • the plasma reacts to form a layer of material on a surface of the substrate that is positioned on the susceptor.
  • the design of the gas distribution showerhead, as well as the application of RF current has a great impact on the properties of the plasma.
  • Some of the substrates utilized in industry are flat media, such as rectangular, flexible sheets of glass, plastic or other material typically used in the manufacture of flat panel displays, solar devices, OLED devices, among other applications.
  • Materials to form electronic devices, films and other structures on the flat media are deposited onto the flat media by numerous processes, including PECVD.
  • plasma density particularly at the perimeter of the flat media, is generally not the same as the plasma density inward of the perimeter of the flat media. This non-uniformity in plasma density results in film thickness non-uniformity across the area of the flat media.
  • Numerous modifications to the gas distribution showerhead and/or the PECVD process parameters have been performed but a delta in film uniformity has not been eliminated.
  • a gas distribution showerhead that includes a body having a plurality of gas passages extending therethrough from an upstream side to a downstream side, the body having a center region and a peripheral region, the peripheral region having an anodized layer disposed on the upstream side and the downstream side.
  • a plasma processing apparatus in another embodiment, includes a processing chamber body having walls and a floor, a susceptor disposed in the processing chamber body and movable between a first position and a second position and one or more straps coupled to the susceptor and to one or more of the floor or walls.
  • the apparatus also includes a showerhead disposed in the processing chamber body opposite to the susceptor and having one or more gas passages extending therethrough.
  • the showerhead includes a body having a plurality of gas passages extending therethrough from an upstream side to a downstream side, the body having a center region and a peripheral region, the peripheral region having an anodized layer disposed on the upstream side and the downstream side.
  • a plasma enhanced chemical vapor deposition apparatus in another embodiment, includes a chamber body having a plurality of walls and a chamber floor and a susceptor disposed in the chamber body and movable between a first position spaced a first distance from the chamber floor and a second position spaced a second distance greater than the first distance from the chamber floor.
  • the apparatus also includes a plurality of straps coupled to the susceptor and to one or more of the chamber floor and the plurality of walls. The plurality of straps are unevenly distributed along the susceptor.
  • the apparatus also includes a gas distribution showerhead disposed in the chamber body opposite the susceptor, having a plurality of gas passages extending therethrough and having a central portion and an edge portion.
  • the gas distribution showerhead includes a body having a plurality of gas passages extending therethrough from an upstream side to a downstream side, the body having a center region and a peripheral region, the peripheral region having an anodized layer disposed on the upstream side and the downstream side.
  • Figure 1 is a schematic cross sectional view of an apparatus according to one embodiment.
  • Figure 2 is a plan view of one embodiment of a showerhead.
  • Figure 3 is a schematic sectional view of a showerhead according to another embodiment.
  • Figure 4 is a schematic cross-sectional view of a gas distribution showerhead relative to a process chamber wall according to one embodiment.
  • Embodiments disclosed herein generally relate to an apparatus having a partially anodized gas distribution showerhead.
  • the gas distribution showerhead is fabricated from aluminum and some portions remain bare aluminum while other portions are anodized as disclosed herein.
  • the anodization is provided at a peripheral region of the gas distribution showerhead while portions within the peripheral region remain bare aluminum.
  • the gas distribution showerhead affects plasma properties thereby reducing film thickness non-uniformities across a substrate.
  • Large area processing chambers are sized to process flat media, such as flat, flexible substrates having an area of greater than about fifteen thousand square centimeters.
  • the substrates may have an area of greater than about fifty thousand square centimeters.
  • the substrates may have an area of greater than about fifty five thousand square centimeters.
  • the substrates may have an area of greater than about sixty thousand square centimeters.
  • the substrates may have an area of greater than about ninety thousand square centimeters.
  • FIG. 1 is a schematic cross sectional view of an apparatus 100 according to one embodiment.
  • the apparatus 100 is a PECVD apparatus.
  • the apparatus 100 includes a chamber body 102 into which is fed processing gas from a gas source 104.
  • the processing gas is fed from the gas source, through a remote plasma source 106 and through a tube 108.
  • the processing gas is not ignited into a plasma in the remote plasma source 106.
  • the cleaning gas is sent from the gas source 104 into the remote plasma source 106 where it is ignited into a plasma before the radicals from the plasma enter the chamber.
  • the tube 108 is an electrically conductive tube 108.
  • the RF current that is used to ignite the processing gas into a plasma within the chamber is coupled to the tube 108 from a RF power source 110.
  • RF current travels along the outside of the tube 108 due to the ‘skin effect’ of RF current.
  • RF current will penetrate only a certain, predeterminable depth into a conductive material.
  • the RF current travels along the outside of the tube 108 and the processing gas travels within the tube 108.
  • the processing gas never ‘sees’ the RF current when traveling in the tube 108 because the RF current does not penetrate far enough into the tube 108 to expose the processing gas to RF current within the tube 108.
  • the processing gas is fed to the chamber through the backing plate 114.
  • the processing gas then expands into a volume 118 between the backing plate 114 and the showerhead 116.
  • the processing gas then travels through a plurality of gas passages 156 and into the processing volume 148.
  • the gas passages 156 are formed from an upstream side or back face 159 of the showerhead 116 to a downstream side or a front face 160 of the showerhead 116.
  • the RF current does not enter the volume 118 between the backing plate 114 and the showerhead 116. Instead, the RF current travels along the outside of the tube 108 to the backing plate 114. Then, the RF current travels along the atmospheric side 158 of the backing plate 114.
  • the backing plate 114 comprises an electrically conductive material. In one embodiment, the backing plate 114 comprises aluminum. In another embodiment, the backing plate 114 may comprise stainless steel. The RF current then travels from the backing plate along a bracket 120 that comprises a conductive material. In one embodiment, the bracket 120 comprises aluminum. In another embodiment, the bracket 120 comprises stainless steel.
  • the RF current then travels along the front face 160 of the showerhead 116 where the RF current ignites the processing gas that has passed through the gas passages 156 into a plasma in the processing volume 148 located between the showerhead 116 and the substrate 124.
  • the path that the RF current travels to reach the front face 160 of the showerhead 116 is shown by arrows “A” .
  • An O-ring 122 electrically isolates the wall 146 from the backing plate 114.
  • the showerhead 116 may comprise a conductive material. In another embodiment, the showerhead 116 comprises a metal. In another embodiment, the showerhead 116 comprises aluminum. In another embodiment, the showerhead 116 comprises stainless steel.
  • the substrate 124 is disposed on a susceptor 126 that is movable between a first position spaced a first distance from the showerhead 116 and a second position spaced a second distance from the showerhead 116 where the second distance is less than the first distance.
  • the susceptor 126 is disposed on a stem 136 and is movable by an actuator 140.
  • the substrate 124 is a large area substrate and hence, may bow when elevated on lift pins 130, 132.
  • the lift pins 130, 132 may have different lengths.
  • the susceptor 126 When the substrate 124 is inserted into the chamber through the slit valve opening 144, the susceptor 126 may be in a lowered position.
  • the lift pins 130, 132 extend above the susceptor 126.
  • the lift pins 130, 132 have different lengths.
  • the outer lift pins 130 are longer than the inner lift pins 132 so that the substrate 124 sags in the center when placed on the lift pins 130, 132.
  • the susceptor 126 is raised to meet the substrate 124.
  • the substrate 124 contacts the susceptor 126 in a center to edge progression so that any gas that is present between the susceptor 126 and the substrate 124 is expelled.
  • the lift pins 130, 132 are then raised by the susceptor 126 along with the substrate 124.
  • the shadow frame 128 When the susceptor 126 is raised above the slit valve opening 144, the susceptor 126 encounters a shadow frame 128.
  • the shadow frame 128 serves a dual purpose.
  • the shadow frame 128 shields areas of the susceptor 126 that are not covered by a substrate 124 from deposition.
  • the shadow frame 128 comprises an insulating material.
  • the shadow frame 128 comprises a ceramic material.
  • the shadow frame 128 comprises Al 2 O 3 .
  • the shadow frame comprises a metal with an anodized layer thereover.
  • the metal comprises aluminum.
  • the anodized layer comprises Al 2 O 3 .
  • the RF current needs to return to the power source 110 that drives the RF current.
  • the RF current couples through the plasma to the susceptor 126.
  • the susceptor 126 comprises a conductive material such as aluminum.
  • the susceptor 126 comprises a conductive material such as stainless steel.
  • the RF current travels back to the power source 110 by traveling the path shown by arrows “B” .
  • the RF current returns back along the wall 146 and a lid 112 before reaching the power source 110.
  • one or more straps 134 are coupled to the susceptor 126.
  • the RF current will travel down the straps 134 to the bottom 138 of the chamber and then back up the interior walls 146 of the chamber.
  • the RF current would travel along the bottom of the susceptor 126, down the stem 136 and then back along the bottom 138 and interior walls 146 of the chamber.
  • a high potential difference may exist between the RF current travelling along the bottom of the susceptor 126 and the RF current on either the stem 136 or the bottom 138 of the chamber. Because of the potential different, arcing may occur in the volume 150 below the susceptor.
  • the straps 134 reduce the likelihood of arcing in volume 150.
  • an anodized layer 170 is provided on a portion of the showerhead 116.
  • the susceptor 126 has not only the straps 134 coupled to the susceptor 126, but also an RF return element 172 by way of an extension 174 coupled to the bottom of the susceptor 126.
  • the RF return element 172 couples to the ledge 142 which supports the shadow frame 128 when the susceptor 126 is in the lowered position.
  • the RF return element 172 shown in Figure 1 is a rod that provides the electrical connection between the susceptor 126 and the ledge 142.
  • the RF return element 172 provides a shorter return path than the straps 134 and thus, the majority of the RF current will return to the RF power source by way of the RF return elements 172 rather than the straps 134.
  • Other RF return elements may also be used in conjunction with the anodized layer 170 and the straps 134, which will be discussed below.
  • the RF return element 172 may be disposed on the ledge 142 and extend therebelow until the extension 174 from the susceptor 126 moves into contact with the RF return element 172.
  • the anodized layer 170 may be utilized to tune plasma within the processing volume 148.
  • the showerhead 116 includes a center region and an edge or peripheral region surrounding the center region, and the anodized layer 170 is provided on the peripheral region while the center region remains bare aluminum.
  • the phrase “bare aluminum” is defined as a surface free from a coating, with the exception of a natural or native oxide layer which is common to aluminum surfaces.
  • the anodized layer 170 may be defined as a layer or coating deliberately provided on a surface as opposed to a naturally occurring layer, such as a native oxide layer.
  • the anodized layer 170 may be an oxide layer that is thicker than a naturally occurring oxide layer.
  • the surface area of the showerhead 116 covered by the anodized layer 170 may be determined based on a balance of two competing concerns: particle generation (which affects yield) and plasma uniformity (which affects film uniformity) .
  • FIG 2 is a plan view of one embodiment of a showerhead 200.
  • the showerhead 200 may be utilized in the apparatus 100 as the showerhead 116.
  • the showerhead 200 includes a body 205 made of aluminum, such as an aluminum alloy.
  • the body 205 includes the plurality of gas passages 156 formed between the back face 159 (shown in Figure 1) and the front face 160.
  • the body 205 of the showerhead 200 is separated by a dashed line to indicate an edge or peripheral region 210 and a center region 215 of the showerhead 200.
  • the center region 215 is surrounded by the peripheral region 210.
  • the center region 215 is bare aluminum while the peripheral region 210 is anodized (e.g., includes the anodized layer 170 shown in Figure 1).
  • the center region 215 and the peripheral region 210 react differently to the RF energy applied thereto.
  • the plasma density between the susceptor 126 (shown in Figure 1) and the showerhead 200 is different at positions corresponding to the center region 215 and the peripheral region 210.
  • a distance 220 and a distance 225 from a minor side 230 and a major side 235, respectively, may be different or the same.
  • the distance 220 and the distance 225 may be based on a desired plasma property between the susceptor 126 (shown in Figure 1) and the showerhead 200.
  • the distance 220 and the distance 225 may be described as a first surface area 240 and a second surface area 245, the first surface area 240 being anodized and the second surface area 245 being bare aluminum.
  • the first surface area 240 and the second surface area 245 may be expressed in a surface area percentage or ratio (e.g., of bare aluminum to anodized coating) .
  • the percentage of the first surface area 240 (coated area) relative to the second surface area 245 (uncoated area) is about 20%to about 25%.
  • the size of the first surface area 240 (anodized area) relative to the second surface area 245 (bare aluminum area) may be chosen based on the desired plasma density provided between the susceptor 126 (shown in Figure 1) and the showerhead 200.
  • the size of the first surface area 240 may be chosen to decrease plasma density (as capacitive effect) at the area between the susceptor 126 and the showerhead 200. Decreasing the plasma density at the peripheral region 210 of the showerhead 200 by providing the anodized peripheral region 210 may result in decreased film thickness at the peripheral areas of a substrate.
  • anodized coatings are more porous relative to bare aluminum.
  • anodized coatings have properties that differ from bare aluminum. These properties include hardness, coefficient of thermal expansion, among others. The difference in properties may lead to micro-cracking and/or peeling of the anodized coating and create particle contamination. Thus, one of skill in the art may balance the competing film uniformity and particle concerns to arrive at the optimum area of anodization relative to bare aluminum.
  • the showerhead 200 as described herein is able to minimize the risk of particle contamination as a gas flow effect.
  • the showerhead 200 also optimizes device design rule by controlling deposition film purity.
  • the showerhead 200 having the anodized peripheral region 210 and the bare center region 215, provides a desired plasma density as well managing film deposition uniformity.
  • FIG 3 is a schematic sectional view of a showerhead 300 according to another embodiment.
  • the showerhead 300 may be utilized in the apparatus 100 as the showerhead 116.
  • the showerhead 300 includes the first surface area 240 (peripheral region 210) and the second surface area 245 (center region 215) as described in Figure 2.
  • the showerhead 300 has a plurality of gas passages 156 passing between an upstream side 305 (back face 159) that faces the backing plate 114 (shown in Figure 1) and a downstream side 310 (front face 160) .
  • the downstream side 310 is shown to be concave facing the substrate. It is to be understood that the downstream side 310 may be flat and substantially parallel to the upstream side 305 in some embodiments. In one embodiment, the upstream side 305 of the showerhead 300 may be concave as well.
  • the gas passages 156 have a plenum 315, an orifice 320 and a hollow cathode cavity 325. The orifice 320 generates a back pressure on the upstream side 305 of the showerhead 305.
  • the gas may evenly distribute on the upstream side 305 of the showerhead 300 before passing through the gas passages 156.
  • the hollow cathode cavities 325 permit a plasma to be generated within the gas passages 156 in the hollow cathode cavities 325.
  • the hollow cathode cavities 325 permit greater control of plasma distribution within the processing chamber as opposed to the situation where no hollow cathode cavities are present.
  • the hollow cathode cavities 325 at the downstream side 310 have a larger diameter or width than the orifices 320.
  • the orifice 320 has a width or diameter less than the plasma dark space and thus, plasma is not expected to light above the hollow cathode cavities 325.
  • the showerhead 300 also has a flange 330 that extends out towards the chamber walls (the wall 146 shown in Figure 1) .
  • the anodized layer 170 is formed along exterior and interior surfaces of the showerhead 300.
  • the anodized layer 170 is provided over the flange 330 to a location inward of the flange 330.
  • the anodized layer 170 may also prevent arcing between the showerhead 300 and the chamber walls.
  • the anodized layer 170 at least partially covers the upstream side 305 and the downstream side 310.
  • the anodized layer 170 is provided on surfaces of the gas passages 156 at the peripheral region 210.
  • Figure 4 is a schematic cross-sectional view of a gas distribution showerhead 400 relative to a process chamber wall 405 according to one embodiment.
  • the flange 330 of the showerhead 400 extends close to the wall 405.
  • the showerhead 400 is suspended from the backing plate 114 (shown in Figure 1) by a hanger 410.
  • the anodized layer 170 that is deposited over the flange 330 acts as an insulation to add impedance and slow down the RF current traveling along the showerhead 400.
  • the anodized layer 170 may prevent electrons from jumping from the high RF potential of the showerhead 400 to the low RF potential of the wall 405.
  • the anodized layer 170 may be thin enough to permit the RF current to continue along the showerhead 400. However, the presence of the anodized layer 170 will be thick enough to prevent or reduce arcing between the showerhead 400 and the wall 405.
  • the anodized layer 170 may have a thickness of between about 1 micron ( ⁇ m) to about 2 ⁇ m as shown by arrows “D” . In another embodiment, the anodized layer 170 may have a thickness of greater than about 2 ⁇ m. In contrast, the thickness of the a native oxide layer of the center region 215 of the showerhead as described herein is about 50 Angstroms, or less.
  • the showerhead 300 may be first formed by drilling the gas passages 156 therethrough.
  • the downstream side 310 may be made concave either before or after the drilling. In any event, after the showerhead 300 is formed, it is quite dirty and needs to be cleaned. In some embodiments, the showerhead 300 may be cleaned. Following the cleaning, the peripheral region 210 of the showerhead 300 may be anodized.
  • the peripheral region 210 may be placed into a electrolytic bath.
  • Each side of the showerhead 300 may be coated at a specified voltage or current, and then rotated 90 degrees to coat another side.
  • a depth at which each side is submerged corresponds to the distance 220 and the distance 225 (described in Figure 2) . No mask (s) or other tool (s) is necessary to form the anodized layer 170 on the peripheral region 210.
  • the anodized layer 170 may comprise polytetrafluoroethylene. In another embodiment, the anodized layer 170 may comprise an organic material.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Des modes de réalisation de la présente invention concernent généralement un appareil ayant une tête de distribution de gaz partiellement anodisée comprenant un corps ayant une pluralité de passages de gaz s'étendant à travers celui-ci d'un côté amont à un côté aval, le corps ayant une région centrale et une région périphérique, la région périphérique ayant une couche anodisée disposée sur le côté amont et le côté aval.
PCT/CN2017/114443 2017-12-04 2017-12-04 Tête de distribution partiellement anodisée WO2019109207A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020207019208A KR20200094781A (ko) 2017-12-04 2017-12-04 부분적으로 양극산화된 샤워헤드
CN201780098113.1A CN111557040A (zh) 2017-12-04 2017-12-04 部分阳极化的喷头
PCT/CN2017/114443 WO2019109207A1 (fr) 2017-12-04 2017-12-04 Tête de distribution partiellement anodisée

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/114443 WO2019109207A1 (fr) 2017-12-04 2017-12-04 Tête de distribution partiellement anodisée

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WO2019109207A1 true WO2019109207A1 (fr) 2019-06-13

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KR (1) KR20200094781A (fr)
CN (1) CN111557040A (fr)
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11164726B2 (en) * 2019-02-08 2021-11-02 Toshiba Memory Corporation Gas supply member, plasma processing apparatus, and method for forming coating film
US20210384033A1 (en) * 2020-06-03 2021-12-09 Asm Ip Holding B.V. Shower plate, substrate treatment device, and substrate treatment method
WO2023069227A1 (fr) * 2021-10-19 2023-04-27 Applied Materials, Inc. Faux trou et renfort en maille pour diffuseur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006017136A2 (fr) * 2004-07-12 2006-02-16 Applied Materials, Inc. Maitrise de l'uniformite du plasma par la courbure du diffuseur
WO2010132716A2 (fr) * 2009-05-13 2010-11-18 Applied Materials, Inc. Tête de distribution anodisée
US20140118751A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Pecvd process

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011228329A (ja) * 2010-04-15 2011-11-10 Fujifilm Corp ガス供給電極の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006017136A2 (fr) * 2004-07-12 2006-02-16 Applied Materials, Inc. Maitrise de l'uniformite du plasma par la courbure du diffuseur
WO2010132716A2 (fr) * 2009-05-13 2010-11-18 Applied Materials, Inc. Tête de distribution anodisée
US20140118751A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Pecvd process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11164726B2 (en) * 2019-02-08 2021-11-02 Toshiba Memory Corporation Gas supply member, plasma processing apparatus, and method for forming coating film
US20210384033A1 (en) * 2020-06-03 2021-12-09 Asm Ip Holding B.V. Shower plate, substrate treatment device, and substrate treatment method
WO2023069227A1 (fr) * 2021-10-19 2023-04-27 Applied Materials, Inc. Faux trou et renfort en maille pour diffuseur

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KR20200094781A (ko) 2020-08-07
CN111557040A (zh) 2020-08-18

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