WO2008079742A3 - Prévention de dépôt de film sur une paroi de chambre de traitement pecvd - Google Patents

Prévention de dépôt de film sur une paroi de chambre de traitement pecvd Download PDF

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Publication number
WO2008079742A3
WO2008079742A3 PCT/US2007/087597 US2007087597W WO2008079742A3 WO 2008079742 A3 WO2008079742 A3 WO 2008079742A3 US 2007087597 W US2007087597 W US 2007087597W WO 2008079742 A3 WO2008079742 A3 WO 2008079742A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
support
prevention
process chamber
Prior art date
Application number
PCT/US2007/087597
Other languages
English (en)
Other versions
WO2008079742A2 (fr
Inventor
John M White
Beom Soo Park
Robin L Tiner
Soo Young Choi
Original Assignee
Applied Materials Inc
John M White
Beom Soo Park
Robin L Tiner
Soo Young Choi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, John M White, Beom Soo Park, Robin L Tiner, Soo Young Choi filed Critical Applied Materials Inc
Publication of WO2008079742A2 publication Critical patent/WO2008079742A2/fr
Publication of WO2008079742A3 publication Critical patent/WO2008079742A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé et un appareil pour traiter un substrat. Le corps d'une chambre comprend un fond et une paroi latérale pourvue d'une valve fendue. Un porte-substrat comprenant un corps de support est disposé dans le corps de la chambre. Une première extrémité d'au moins un conducteur de terre RF large est couplée au corps du support et une deuxième extrémité d'au moins un conducteur de terre RF est couplée au fond de la chambre. Au moins une barre d'extension est positionnée le long d'un bord périphérique du corps de support. Le procédé de l'invention consiste à utiliser une chambre de traitement qui comprend une valve fendue et un porte-substrat; à envoyer une puissance RF à une plaque de distribution disposée sur le porte-substrat; à faire circuler un gaz dans la plaque de distribution; à traiter au plasma un substrat disposé sur le porte-substrat; et à réduire la génération de plasma adjacent à la valve fendue.
PCT/US2007/087597 2006-12-20 2007-12-14 Prévention de dépôt de film sur une paroi de chambre de traitement pecvd WO2008079742A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61392406A 2006-12-20 2006-12-20
US61393406A 2006-12-20 2006-12-20
US11/613,934 2006-12-20
US11/613,924 2006-12-20

Publications (2)

Publication Number Publication Date
WO2008079742A2 WO2008079742A2 (fr) 2008-07-03
WO2008079742A3 true WO2008079742A3 (fr) 2008-10-30

Family

ID=39563168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/087597 WO2008079742A2 (fr) 2006-12-20 2007-12-14 Prévention de dépôt de film sur une paroi de chambre de traitement pecvd

Country Status (2)

Country Link
TW (1) TWI455192B (fr)
WO (1) WO2008079742A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104513972A (zh) * 2014-12-31 2015-04-15 深圳市华星光电技术有限公司 化学气相沉积设备
WO2020177119A1 (fr) * 2019-03-07 2020-09-10 Applied Materials, Inc. Conception de ruban de mise à la terre
KR20210148406A (ko) * 2019-04-29 2021-12-07 어플라이드 머티어리얼스, 인코포레이티드 접지 스트랩 조립체들
CN110656321B (zh) * 2019-09-16 2021-08-03 武汉华星光电半导体显示技术有限公司 一种接地结构及具有该接地结构的化学气相沉积设备
CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030211757A1 (en) * 2002-05-07 2003-11-13 Applied Materials, Inc. Substrate support with extended radio frequency electrode upper surface
US20050056370A1 (en) * 2001-08-09 2005-03-17 Applied Materials, Inc. Pedestal with integral shield
US20060060302A1 (en) * 2004-09-21 2006-03-23 White John M RF grounding of cathode in process chamber

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7393432B2 (en) * 2004-09-29 2008-07-01 Lam Research Corporation RF ground switch for plasma processing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056370A1 (en) * 2001-08-09 2005-03-17 Applied Materials, Inc. Pedestal with integral shield
US20030211757A1 (en) * 2002-05-07 2003-11-13 Applied Materials, Inc. Substrate support with extended radio frequency electrode upper surface
US20060060302A1 (en) * 2004-09-21 2006-03-23 White John M RF grounding of cathode in process chamber

Also Published As

Publication number Publication date
WO2008079742A2 (fr) 2008-07-03
TWI455192B (zh) 2014-10-01
TW200834688A (en) 2008-08-16

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