WO2006013211A1 - A semiconductor switch arrangement and an electronic device - Google Patents

A semiconductor switch arrangement and an electronic device Download PDF

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Publication number
WO2006013211A1
WO2006013211A1 PCT/EP2005/053819 EP2005053819W WO2006013211A1 WO 2006013211 A1 WO2006013211 A1 WO 2006013211A1 EP 2005053819 W EP2005053819 W EP 2005053819W WO 2006013211 A1 WO2006013211 A1 WO 2006013211A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor switch
bipolar transistor
node
switch arrangement
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2005/053819
Other languages
English (en)
French (fr)
Inventor
Michel Zecri
Luca Bertolini
Patrice Besse
Maryse Bafleur
Nicolas Nolhier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
NXP USA Inc
Original Assignee
Centre National de la Recherche Scientifique CNRS
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Freescale Semiconductor Inc filed Critical Centre National de la Recherche Scientifique CNRS
Priority to JP2007524346A priority Critical patent/JP2008509548A/ja
Priority to US11/573,078 priority patent/US7916439B2/en
Publication of WO2006013211A1 publication Critical patent/WO2006013211A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Definitions

  • N- buried layer 501 Such an arrangement enables the inventive concept to be used in an isolated LDMOS implementation if the EPI layer is N doped or none isolated LDMOS if the EPI layer is P doped.
  • Located above the integrated circuit body is a plurality of gate regions 505 isolated from the integrated circuit body via insulation regions 506.
  • the voltage across the MOSFET device 301 reaches the breakdown voltage Al of the bipolar transistor 302.
  • current will flow from the load side of the MOSFET device 301 through the bipolar transistor 302 to the gate 305 of the MOSFET device 301 causing the voltage applied to the gate 305 of the MOSFET device 301 to increase, as shown in the fourth waveform 803.
  • the bipolar transistor 412 described FIG. 4 clamps the voltage between the gate and source terminals between time T3 and T4

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
PCT/EP2005/053819 2004-08-03 2005-08-03 A semiconductor switch arrangement and an electronic device Ceased WO2006013211A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007524346A JP2008509548A (ja) 2004-08-03 2005-08-03 半導体スイッチ装置と電子素子
US11/573,078 US7916439B2 (en) 2004-08-03 2005-08-03 Semiconductor switch arrangement and an electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103726A EP1624570A1 (en) 2004-08-03 2004-08-03 A semiconductor switch arrangement
EP04103726.8 2004-08-03

Publications (1)

Publication Number Publication Date
WO2006013211A1 true WO2006013211A1 (en) 2006-02-09

Family

ID=34929408

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/053819 Ceased WO2006013211A1 (en) 2004-08-03 2005-08-03 A semiconductor switch arrangement and an electronic device

Country Status (6)

Country Link
US (1) US7916439B2 (enExample)
EP (1) EP1624570A1 (enExample)
JP (1) JP2008509548A (enExample)
KR (1) KR20070056053A (enExample)
CN (1) CN101019319A (enExample)
WO (1) WO2006013211A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011126609A3 (en) * 2010-03-30 2011-11-24 Freescale Semiconductor, Inc. Semiconductor device and method

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DE102006047243A1 (de) * 2006-05-15 2007-11-22 Infineon Technologies Ag Bordnetz mit mindestens einem Leistungstransistor und Verfahren zum Schutz eines Bordnetzes
US7994747B2 (en) * 2007-07-13 2011-08-09 Seagate Technology Llc Suppressing phased motor voltage transients on disconnect
US7911750B2 (en) 2008-02-27 2011-03-22 Freescale Semiconductor, Inc. Resistor triggered electrostatic discharge protection
WO2009128942A1 (en) * 2008-04-16 2009-10-22 Bourns, Inc. Current limiting surge protection device
WO2009153627A1 (en) * 2008-06-20 2009-12-23 Freescale Semiconductor, Inc. Semiconductor device and method of electrostatic discharge protection therefor
US8334575B2 (en) 2008-10-03 2012-12-18 Freescale Semiconductor, Inc. Semiconductor device and electronic device
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
EP2614365B1 (en) * 2010-09-09 2019-02-20 Koninklijke Philips N.V. A method and a device for attracting magnetic particles to a surface
US8354879B2 (en) 2011-01-11 2013-01-15 Freescale Semiconductor, Inc. Power switch for decreased ramp rate
KR101710599B1 (ko) * 2011-01-12 2017-02-27 삼성전자 주식회사 반도체 장치 및 그 제조 방법
WO2014041388A1 (en) * 2012-09-12 2014-03-20 Freescale Semiconductor, Inc. A semiconductor device and an integrated circuit comprising an esd protection device, esd protection devices and a method of manufacturing the semiconductor device
KR101926607B1 (ko) * 2012-09-28 2018-12-07 삼성전자 주식회사 클램핑 회로, 이를 포함하는 반도체 장치 및 반도체 장치의 클램핑 방법
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
CN105097795B (zh) * 2014-05-04 2018-03-16 无锡华润上华科技有限公司 具esd保护结构的半导体器件
US9893724B2 (en) * 2015-07-31 2018-02-13 Texas Instruments Incorporated Isolated output switching circuit
CN107393923B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 开关性能稳定的功率器件
CN107369683B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 抗电磁干扰的功率器件
CN107256865B (zh) * 2017-06-27 2020-06-19 苏州美天网络科技有限公司 低损耗半导体功率器件
DE102019210566B4 (de) * 2019-07-17 2022-03-17 Conti Temic Microelectronic Gmbh Vorrichtung und Verfahren zum Messen eines durch eine PWM-angesteuerte induktive Last fließenden Stromes
CN113035937A (zh) * 2021-03-12 2021-06-25 电子科技大学 一种高侧功率管的esd保护结构
CN113658949B (zh) * 2021-08-12 2022-06-14 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造工艺
CN114172498A (zh) * 2021-11-11 2022-03-11 深圳先进技术研究院 开关电路、集成电路和电子设备

Citations (3)

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US5812006A (en) * 1996-10-29 1998-09-22 Texas Instruments Incorporated Optimized power output clamping structure
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6614633B1 (en) * 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit

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JP3064457B2 (ja) * 1991-03-08 2000-07-12 関西日本電気株式会社 スイッチ回路およびゲート電圧クランプ型半導体装置
JPH05235346A (ja) * 1992-02-20 1993-09-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE19719919A1 (de) * 1997-05-13 1998-11-26 Daimler Benz Ag Anordnung zum Schutz von elektrischen Einrichtungen
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6049119A (en) * 1998-05-01 2000-04-11 Motorola, Inc. Protection circuit for a semiconductor device
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
US6365932B1 (en) * 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
JP2001196583A (ja) * 1999-10-29 2001-07-19 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2004055999A (ja) * 2002-07-23 2004-02-19 Seiko Epson Corp 半導体装置及びその製造方法
JP4590888B2 (ja) * 2004-03-15 2010-12-01 株式会社デンソー 半導体出力回路
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5812006A (en) * 1996-10-29 1998-09-22 Texas Instruments Incorporated Optimized power output clamping structure
US6614633B1 (en) * 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BERTRAND G ET AL: "ANALYSIS AND COMPACT MODELING OF A VERTICAL GROUNDED-BASE N-P-N BIPOLAR TRANSISTOR USED AS ESD PROTECTION IN A SMART POWER TECHNOLOGY", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE INC. NEW YORK, US, vol. 36, no. 9, September 2001 (2001-09-01), pages 1373 - 1381, XP001168170, ISSN: 0018-9200 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011126609A3 (en) * 2010-03-30 2011-11-24 Freescale Semiconductor, Inc. Semiconductor device and method
US8344472B2 (en) 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method

Also Published As

Publication number Publication date
JP2008509548A (ja) 2008-03-27
KR20070056053A (ko) 2007-05-31
US7916439B2 (en) 2011-03-29
CN101019319A (zh) 2007-08-15
EP1624570A1 (en) 2006-02-08
US20080246345A1 (en) 2008-10-09

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