CN101019319A - 半导体开关装置和电子设备 - Google Patents

半导体开关装置和电子设备 Download PDF

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Publication number
CN101019319A
CN101019319A CNA200580026543XA CN200580026543A CN101019319A CN 101019319 A CN101019319 A CN 101019319A CN A200580026543X A CNA200580026543X A CN A200580026543XA CN 200580026543 A CN200580026543 A CN 200580026543A CN 101019319 A CN101019319 A CN 101019319A
Authority
CN
China
Prior art keywords
bipolar transistor
node
semiconductor
switching device
semiconductor switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200580026543XA
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English (en)
Chinese (zh)
Inventor
米歇尔·齐克里
卢卡·贝尔托利尼
帕特里斯·贝塞
玛丽斯·巴夫卢尔
尼古拉斯·诺希尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
NXP USA Inc
Original Assignee
Centre National de la Recherche Scientifique CNRS
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Freescale Semiconductor Inc filed Critical Centre National de la Recherche Scientifique CNRS
Publication of CN101019319A publication Critical patent/CN101019319A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
CNA200580026543XA 2004-08-03 2005-08-03 半导体开关装置和电子设备 Pending CN101019319A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103726A EP1624570A1 (en) 2004-08-03 2004-08-03 A semiconductor switch arrangement
EP04103726.8 2004-08-03

Publications (1)

Publication Number Publication Date
CN101019319A true CN101019319A (zh) 2007-08-15

Family

ID=34929408

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200580026543XA Pending CN101019319A (zh) 2004-08-03 2005-08-03 半导体开关装置和电子设备

Country Status (6)

Country Link
US (1) US7916439B2 (enExample)
EP (1) EP1624570A1 (enExample)
JP (1) JP2008509548A (enExample)
KR (1) KR20070056053A (enExample)
CN (1) CN101019319A (enExample)
WO (1) WO2006013211A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103715672A (zh) * 2012-09-28 2014-04-09 三星电子株式会社 箝位电路、半导体装置和半导体装置的箝位方法
CN102007660B (zh) * 2008-04-16 2014-07-09 柏恩氏股份有限公司 限流电涌保护装置
CN105264774A (zh) * 2013-06-07 2016-01-20 株式会社电装 半导体装置的保护电路
CN106411304A (zh) * 2015-07-31 2017-02-15 德州仪器公司 隔离输出切换电路
CN107256865A (zh) * 2017-06-27 2017-10-17 苏州美天网络科技有限公司 低损耗半导体功率器件
CN107369683A (zh) * 2017-06-27 2017-11-21 苏州美天网络科技有限公司 抗电磁干扰的功率器件
CN107393923A (zh) * 2017-06-27 2017-11-24 苏州美天网络科技有限公司 开关性能稳定的功率器件
CN113658949A (zh) * 2021-08-12 2021-11-16 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造工艺
CN114096857A (zh) * 2019-07-17 2022-02-25 大陆泰密克微电子有限责任公司 用于测量流经pwm控制电感负载的电流的设备和方法
WO2023082405A1 (zh) * 2021-11-11 2023-05-19 深圳先进技术研究院 开关电路、集成电路和电子设备

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DE102006047243A1 (de) * 2006-05-15 2007-11-22 Infineon Technologies Ag Bordnetz mit mindestens einem Leistungstransistor und Verfahren zum Schutz eines Bordnetzes
US7994747B2 (en) * 2007-07-13 2011-08-09 Seagate Technology Llc Suppressing phased motor voltage transients on disconnect
US7911750B2 (en) * 2008-02-27 2011-03-22 Freescale Semiconductor, Inc. Resistor triggered electrostatic discharge protection
WO2009153627A1 (en) * 2008-06-20 2009-12-23 Freescale Semiconductor, Inc. Semiconductor device and method of electrostatic discharge protection therefor
US8334575B2 (en) 2008-10-03 2012-12-18 Freescale Semiconductor, Inc. Semiconductor device and electronic device
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
WO2012032476A1 (en) * 2010-09-09 2012-03-15 Koninklijke Philips Electronics N.V. A method and a device for attracting magnetic particles to a surface
US8354879B2 (en) 2011-01-11 2013-01-15 Freescale Semiconductor, Inc. Power switch for decreased ramp rate
KR101710599B1 (ko) * 2011-01-12 2017-02-27 삼성전자 주식회사 반도체 장치 및 그 제조 방법
WO2014041388A1 (en) 2012-09-12 2014-03-20 Freescale Semiconductor, Inc. A semiconductor device and an integrated circuit comprising an esd protection device, esd protection devices and a method of manufacturing the semiconductor device
CN105097795B (zh) * 2014-05-04 2018-03-16 无锡华润上华科技有限公司 具esd保护结构的半导体器件
CN113035937A (zh) * 2021-03-12 2021-06-25 电子科技大学 一种高侧功率管的esd保护结构

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JP3064457B2 (ja) * 1991-03-08 2000-07-12 関西日本電気株式会社 スイッチ回路およびゲート電圧クランプ型半導体装置
JPH05235346A (ja) * 1992-02-20 1993-09-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5812006A (en) * 1996-10-29 1998-09-22 Texas Instruments Incorporated Optimized power output clamping structure
DE19719919A1 (de) * 1997-05-13 1998-11-26 Daimler Benz Ag Anordnung zum Schutz von elektrischen Einrichtungen
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6049119A (en) * 1998-05-01 2000-04-11 Motorola, Inc. Protection circuit for a semiconductor device
US6614633B1 (en) * 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6365932B1 (en) * 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
JP2001196583A (ja) * 1999-10-29 2001-07-19 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2004055999A (ja) * 2002-07-23 2004-02-19 Seiko Epson Corp 半導体装置及びその製造方法
JP4590888B2 (ja) * 2004-03-15 2010-12-01 株式会社デンソー 半導体出力回路
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102007660B (zh) * 2008-04-16 2014-07-09 柏恩氏股份有限公司 限流电涌保护装置
CN103715672A (zh) * 2012-09-28 2014-04-09 三星电子株式会社 箝位电路、半导体装置和半导体装置的箝位方法
CN105264774A (zh) * 2013-06-07 2016-01-20 株式会社电装 半导体装置的保护电路
CN105264774B (zh) * 2013-06-07 2018-08-17 株式会社电装 半导体装置的保护电路
CN106411304A (zh) * 2015-07-31 2017-02-15 德州仪器公司 隔离输出切换电路
CN106411304B (zh) * 2015-07-31 2021-06-04 德州仪器公司 隔离输出切换电路
CN107393923A (zh) * 2017-06-27 2017-11-24 苏州美天网络科技有限公司 开关性能稳定的功率器件
CN107369683A (zh) * 2017-06-27 2017-11-21 苏州美天网络科技有限公司 抗电磁干扰的功率器件
CN107256865B (zh) * 2017-06-27 2020-06-19 苏州美天网络科技有限公司 低损耗半导体功率器件
CN107369683B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 抗电磁干扰的功率器件
CN107393923B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 开关性能稳定的功率器件
CN107256865A (zh) * 2017-06-27 2017-10-17 苏州美天网络科技有限公司 低损耗半导体功率器件
CN114096857A (zh) * 2019-07-17 2022-02-25 大陆泰密克微电子有限责任公司 用于测量流经pwm控制电感负载的电流的设备和方法
CN113658949A (zh) * 2021-08-12 2021-11-16 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造工艺
WO2023082405A1 (zh) * 2021-11-11 2023-05-19 深圳先进技术研究院 开关电路、集成电路和电子设备

Also Published As

Publication number Publication date
WO2006013211A1 (en) 2006-02-09
US7916439B2 (en) 2011-03-29
KR20070056053A (ko) 2007-05-31
EP1624570A1 (en) 2006-02-08
JP2008509548A (ja) 2008-03-27
US20080246345A1 (en) 2008-10-09

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Open date: 20070815