KR20070056053A - 반도체 스위치 장치 및 전자 디바이스 - Google Patents

반도체 스위치 장치 및 전자 디바이스 Download PDF

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Publication number
KR20070056053A
KR20070056053A KR1020077002777A KR20077002777A KR20070056053A KR 20070056053 A KR20070056053 A KR 20070056053A KR 1020077002777 A KR1020077002777 A KR 1020077002777A KR 20077002777 A KR20077002777 A KR 20077002777A KR 20070056053 A KR20070056053 A KR 20070056053A
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KR
South Korea
Prior art keywords
semiconductor switch
bipolar transistor
node
voltage
switch device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077002777A
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English (en)
Korean (ko)
Inventor
미셜 제크리
루카 베르톨리니
파트리스 베세
메리스 바프레우르
니콜라스 노르히에르
Original Assignee
프리스케일 세미컨덕터, 인크.
쌩뜨레 나티오날 데 라 르세르쉬 생띠끄 (씨. 엔. 알. 에스)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 프리스케일 세미컨덕터, 인크., 쌩뜨레 나티오날 데 라 르세르쉬 생띠끄 (씨. 엔. 알. 에스) filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20070056053A publication Critical patent/KR20070056053A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
KR1020077002777A 2004-08-03 2005-08-03 반도체 스위치 장치 및 전자 디바이스 Withdrawn KR20070056053A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103726A EP1624570A1 (en) 2004-08-03 2004-08-03 A semiconductor switch arrangement
EP04103726.8 2004-08-03

Publications (1)

Publication Number Publication Date
KR20070056053A true KR20070056053A (ko) 2007-05-31

Family

ID=34929408

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077002777A Withdrawn KR20070056053A (ko) 2004-08-03 2005-08-03 반도체 스위치 장치 및 전자 디바이스

Country Status (6)

Country Link
US (1) US7916439B2 (enExample)
EP (1) EP1624570A1 (enExample)
JP (1) JP2008509548A (enExample)
KR (1) KR20070056053A (enExample)
CN (1) CN101019319A (enExample)
WO (1) WO2006013211A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009108410A3 (en) * 2008-02-27 2009-10-29 Freescale Semiconductor Inc. Resistor triggered electrostatic discharge protection
KR20160143814A (ko) * 2014-05-04 2016-12-14 씨에스엠씨 테크놀로지스 에프에이비1 코., 엘티디. Esd 보호 구조를 갖는 반도체 디바이스

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DE102006047243A1 (de) * 2006-05-15 2007-11-22 Infineon Technologies Ag Bordnetz mit mindestens einem Leistungstransistor und Verfahren zum Schutz eines Bordnetzes
US7994747B2 (en) * 2007-07-13 2011-08-09 Seagate Technology Llc Suppressing phased motor voltage transients on disconnect
US8289667B2 (en) * 2008-04-16 2012-10-16 Bourns, Inc. Current limiting surge protection device
WO2009153627A1 (en) * 2008-06-20 2009-12-23 Freescale Semiconductor, Inc. Semiconductor device and method of electrostatic discharge protection therefor
US8334575B2 (en) 2008-10-03 2012-12-18 Freescale Semiconductor, Inc. Semiconductor device and electronic device
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
WO2012032476A1 (en) * 2010-09-09 2012-03-15 Koninklijke Philips Electronics N.V. A method and a device for attracting magnetic particles to a surface
US8354879B2 (en) 2011-01-11 2013-01-15 Freescale Semiconductor, Inc. Power switch for decreased ramp rate
KR101710599B1 (ko) * 2011-01-12 2017-02-27 삼성전자 주식회사 반도체 장치 및 그 제조 방법
WO2014041388A1 (en) 2012-09-12 2014-03-20 Freescale Semiconductor, Inc. A semiconductor device and an integrated circuit comprising an esd protection device, esd protection devices and a method of manufacturing the semiconductor device
KR101926607B1 (ko) * 2012-09-28 2018-12-07 삼성전자 주식회사 클램핑 회로, 이를 포함하는 반도체 장치 및 반도체 장치의 클램핑 방법
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
US9893724B2 (en) * 2015-07-31 2018-02-13 Texas Instruments Incorporated Isolated output switching circuit
CN107369683B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 抗电磁干扰的功率器件
CN107256865B (zh) * 2017-06-27 2020-06-19 苏州美天网络科技有限公司 低损耗半导体功率器件
CN107393923B (zh) * 2017-06-27 2020-06-23 苏州美天网络科技有限公司 开关性能稳定的功率器件
DE102019210566B4 (de) * 2019-07-17 2022-03-17 Conti Temic Microelectronic Gmbh Vorrichtung und Verfahren zum Messen eines durch eine PWM-angesteuerte induktive Last fließenden Stromes
CN113035937A (zh) * 2021-03-12 2021-06-25 电子科技大学 一种高侧功率管的esd保护结构
CN113658949B (zh) * 2021-08-12 2022-06-14 深圳市芯电元科技有限公司 一种改善关断特性的mosfet芯片制造工艺
CN114172498A (zh) * 2021-11-11 2022-03-11 深圳先进技术研究院 开关电路、集成电路和电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064457B2 (ja) * 1991-03-08 2000-07-12 関西日本電気株式会社 スイッチ回路およびゲート電圧クランプ型半導体装置
JPH05235346A (ja) * 1992-02-20 1993-09-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5812006A (en) * 1996-10-29 1998-09-22 Texas Instruments Incorporated Optimized power output clamping structure
DE19719919A1 (de) * 1997-05-13 1998-11-26 Daimler Benz Ag Anordnung zum Schutz von elektrischen Einrichtungen
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6049119A (en) * 1998-05-01 2000-04-11 Motorola, Inc. Protection circuit for a semiconductor device
US6614633B1 (en) * 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
DE19922924A1 (de) * 1999-05-19 2000-11-30 Siemens Ag Überspannungsschutzvorrichtung für einen Halbleiterschalter
US6365932B1 (en) * 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
JP2001196583A (ja) * 1999-10-29 2001-07-19 Sanyo Electric Co Ltd 半導体装置とその製造方法
JP2004055999A (ja) * 2002-07-23 2004-02-19 Seiko Epson Corp 半導体装置及びその製造方法
JP4590888B2 (ja) * 2004-03-15 2010-12-01 株式会社デンソー 半導体出力回路
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009108410A3 (en) * 2008-02-27 2009-10-29 Freescale Semiconductor Inc. Resistor triggered electrostatic discharge protection
US7911750B2 (en) 2008-02-27 2011-03-22 Freescale Semiconductor, Inc. Resistor triggered electrostatic discharge protection
KR20160143814A (ko) * 2014-05-04 2016-12-14 씨에스엠씨 테크놀로지스 에프에이비1 코., 엘티디. Esd 보호 구조를 갖는 반도체 디바이스

Also Published As

Publication number Publication date
CN101019319A (zh) 2007-08-15
WO2006013211A1 (en) 2006-02-09
US7916439B2 (en) 2011-03-29
EP1624570A1 (en) 2006-02-08
JP2008509548A (ja) 2008-03-27
US20080246345A1 (en) 2008-10-09

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070202

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid