WO2005125284A1 - 有機el素子 - Google Patents
有機el素子 Download PDFInfo
- Publication number
- WO2005125284A1 WO2005125284A1 PCT/JP2005/011018 JP2005011018W WO2005125284A1 WO 2005125284 A1 WO2005125284 A1 WO 2005125284A1 JP 2005011018 W JP2005011018 W JP 2005011018W WO 2005125284 A1 WO2005125284 A1 WO 2005125284A1
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- WO
- WIPO (PCT)
- Prior art keywords
- organic
- metal
- low
- work function
- injection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Definitions
- the present invention relates to an organic electroluminescence (EL) element suitable for use in, for example, a self-luminous flat display.
- EL organic electroluminescence
- a cathode ray tube is currently widely used as a display because of its high luminance, good color reproducibility, and low cost.
- CTR cathode ray tube
- Liquid crystal displays such as active matrix drive have already been commercialized, but they have a narrow viewing angle, and because they are not self-luminous, they require a backlight in dark surroundings, and their power consumption is large. It has sufficient response performance to high-definition high-speed video signals that are expected to be put to practical use in the future, and there are problems such as the problem.
- an organic electroluminescent element using an organic luminescent material (hereinafter, referred to as an organic EL element or simply as an organic EL) has recently attracted attention. I have. That is, by using an organic EL layer as a light emitting material, realization of a flat panel display which is self-luminous, has a fast response speed, and has no viewing angle dependence is expected.
- the organic EL element is composed of a transparent electrode (anode) such as ITO (Indium Tin Oxide), an organic EL layer, an electron injection layer made of a film with a low work function, and a transparent substrate (eg, a glass substrate). It has a structure in which a minimum cathode is sequentially formed by, for example, a vacuum deposition method. Then, by selectively applying a DC voltage between the transparent electrode serving as the anode and the cathode, holes serving as carriers injected from the transparent electrode and electrons injected from the cathode cover form the electron injection layer. Then, recombination of electrons and holes occurs to generate light of a predetermined wavelength, which can be observed from the side of the transparent substrate.
- anode such as ITO (Indium Tin Oxide)
- an organic EL layer an electron injection layer made of a film with a low work function
- a transparent substrate eg, a glass substrate.
- Electron injection electrode materials that is, cathode materials are required to have characteristics such that electrons are easily emitted. is there.
- the work function is a physical property that indicates the ease of electron emission.
- a material with a value smaller than the work function of aluminum (A1) 4.20-4.28 eV is required.
- Low work function metals are alkali metals and alkaline earth metals, whose work functions are less than 4 eV.
- the handling of alkali metals and alkaline earth metals is troublesome because they have high activity and are readily oxidized and nitrided in the air and need to be stored in oil.
- Patent Document 1 discloses that lithium (Li) having a low work function is used as a cathode material! Li has a work function of about 2.9.
- a cathode film is formed by evaporating an alloy base material of indium (In) and lithium by resistive thermal evaporation or electron beam method.
- Patent Document 2 discloses that as a cathode material, an alkali metal or alkaline earth metal oxide or an alkali metal or alkaline earth metal fluoride is used. Specifically, these compounds are , Lithium oxide, lithium fluoride, and magnesium fluoride. It is disclosed that since these compounds are insulating, they need to be formed to a thickness of 0.5 to: LOnm.
- a cathode is formed by vacuum-depositing a very thin film of an alkali metal, an alkaline earth metal or a compound thereof and aluminum in order.
- a combination of a lithium fluoride (LiF) electron injection layer and an aluminum cathode is often used.
- LiF lithium fluoride
- Patent Document 3 is an application filed by the inventor of the present invention.
- the work function is smaller and higher than 4.5 eV in the initial stage of vapor deposition by one vapor deposition operation utilizing the difference in vapor pressure of metal.
- a film having a gradient composition composed of a metal having a vapor pressure and having a low and low electric resistance at the end of vapor deposition and having a low vapor pressure, and a vapor deposition material used for vapor deposition of the film. Since it has a graded composition, copper, silver, gold, etc. can be used in addition to aluminum as the metal used at the end of the vapor deposition.
- the organic EL devices described in Patent Document 1 and Patent Document 2 described above have a low work function in an electron injection layer provided between the cathode and the organic EL layer. It contains! / And Li.
- the electrical resistance of lithium compounds and lithium alloys is large, Since the thickness of the injection layer is reduced and the amount of Li contained is reduced, there is a problem that the number of electrons injected into the organic EL layer is reduced and the current flowing through the organic EL element is reduced.
- Patent Document 1 JP-A-5-198380
- Patent Document 2 Japanese Patent Application Laid-Open No. 2001-203080
- Patent Document 3 JP 2004-010918 A
- an object of the present invention is to provide an organic EL element having a cathode having a high electron emission capability, capable of increasing the current density flowing through the organic EL layer, and having high luminous efficiency. is there.
- Another object of the present invention is to use a metal having high activity and a metal which is susceptible to oxidation or nitridation due to handling during manufacturing or during use in a part of the cathode material. handling
- a further object of the present invention is to provide a cathode having a low light reflectance and a high image contrast.
- the organic EL element of the present invention has an anode, a cathode, and an organic EL layer interposed therebetween.
- the cathode is substantially deposited on the insulating electron injection layer formed on one side of the organic EL layer and on the other side of the insulating electron injection layer, and has a work function of less than OeV.
- a low work function metal having a
- the insulative electron injection layer is 0.5 to 5 nm thick and is composed of an oxide or fluoride of an alkali metal or alkaline earth metal.
- the composite vapor-deposited film having a gradient composition is the same as that of the insulating electron injection layer.
- a low work function metal is contained at a concentration of 70 at.% Or more near the boundary with other surfaces, and a low resistivity metal is contained at a concentration of 70 at.% Or more near the surface opposite to the boundary of the composite deposition film. Therefore, the force near the boundary of the composite vapor-deposited film, the force near the opposite surface, the concentration of the low work function metal is gradually decreasing, and the concentration of the low resistivity metal is gradually increasing.
- An oxide or fluoride of at least one selected element is used. Is preferred,.
- Alkali metal or alkaline earth metal oxides or fluorides have extremely high electric resistance.Thus, forming a thick electron injection layer reduces the current flowing through the organic EL layer and lowers the luminous efficiency of the organic EL device. Therefore, the thickness must be less than 5 nm.
- the thickness of the electron injection layer is 0.5 nm or less, the number of atoms of the alkali metal Z and alkaline earth metal contained in the electron injection layer decreases, and the electron emission ability decreases. Is set to 0.5 to 5 nm.
- a composite vapor-deposited film having a gradient composition is directly vapor-deposited on the insulating electron-injection layer, and a low work function with a concentration of 70 at. Contains metal.
- the electrons emitted from the low work function metal enter the organic EL layer together with the electrons emitted from the electron injection layer and contribute to light emission.
- the composite vapor-deposited film contains a low resistivity metal at a concentration of 7 Oat.% Or more near the surface opposite to the boundary with the insulative electron injection layer. Resistance is low. Then, in the composite deposited film, the concentration of the low work function metal gradually decreases toward the surface in the vicinity of the boundary with the insulating electron injection layer, and the concentration of the low resistivity metal gradually increases. The electric resistance gradually decreases.
- the low work function metals are lithium (Li), sodium (Na), magnesium (Mg), calcium (Ca), strontium (Sr), norium (Ba) and manganese ( (Mn) force is a group force selected from at least one element, and the low resistivity metal is a group force including gold (Au), silver (Ag), copper (Cu) and aluminum (A1). It is preferably a species element.
- the amount of the low work function metal contained in the composite vapor-deposited film increases, the electron emission ability increases, and a large amount of current flows through the organic EL element. Therefore, the amount of the low work function metal is preferably large. .
- the low work function metal has a relatively high specific resistance, and if the low work function metal increases, the low specific resistance metal contained as the remainder of the composite vapor deposition film decreases and the resistance of the composite vapor deposition film increases. It is preferable to set an upper limit for each type of functional metal.
- the low work function metals Li, Na, Mg and Ca are elements with relatively low specific resistance, so they can contain up to 5 at.% In the average content of the entire composite vapor deposition film. Sr, Ba, and Mn, which have high specific resistance, can achieve a higher current density when the average content of the entire composite vapor deposition film is up to 0.8 at.% Than when a pure aluminum film is used. .
- Mn forms an interface with low reflectivity between the composite vapor deposition film and the electron injection layer, if it is used, it can be contained up to 3 at.%.
- these low work function metals are contained in an amount exceeding 0. lat.% In the entire composite vapor-deposited film, the effect of adding these metals appears.
- the low work function metal is selected so as to have a higher vapor pressure than the low specific resistance metal.
- a metal that evaporates at a low temperature is called a "high vapor pressure” metal
- a metal that evaporates at a high temperature is called a “low vapor pressure” metal.
- the low work function metal has a higher vapor pressure than the low resistivity metal, heating the low work function metal and the low resistivity metal simultaneously to deposit these metals on the insulating electron injection layer Because the low work function metal has a higher vapor pressure, the low work function metal vaporizes before the low resistivity metal, and a layer mainly containing the low work function metal is formed on the electron injection layer.
- a low-resistivity metal follows and evaporates, mainly containing a low-work-function metal, and a mixture of a low-work-function metal and a low-resistivity metal or An alloy layer is formed.
- the concentration of the low work function metal in the deposited layer decreases, and the concentration of the low resistivity metal increases.
- the concentration of the low resistivity metal will be more than 70at.% And close to 1 OOat.%.
- a composite vapor deposition film having a gradient composition can be integrally formed by a single vapor deposition operation.
- a low work function metal that is susceptible to oxidation and nitridation is covered with a stable low resistivity metal layer! The work function metal will not be damaged.
- the organic EL device of the present invention using Mn as a low work function metal has a Mn-rich layer of a composite vapor deposition film having a gradient composition adjacent to the insulating electron-emitting layer. Since the Mn-rich layer has a low light reflectance, the image contrast can be improved.
- FIG. 1 is a cross-sectional view illustrating an organic EL device of the present invention.
- Fig. 2 shows the composition distribution of Mg and A1 in the film thickness direction of the composite vapor deposition film having a gradient composition of 1.66at.% Mg and the balance of A1 used in the organic EL device of Example 1. It is a graph shown.
- FIG. 3 shows the organic EL device of Example 1 and the organic EL device of the conventional example (a device using a LiF insulating electron injection layer and pure aluminum as a cathode, and only a composite vapor-deposited film having a gradient composition).
- 5 is a graph showing the current density (mAZc m 2 ) in relation to the applied voltage (V) for the organic EL devices of Comparative Example and Comparative Example.
- FIG. 4 is a graph showing a relationship between current density (mAZcm 2 ) and applied voltage (V) for the organic EL device of Example 2.
- FIG. 5 is a graph showing the current density (mAZcm 2 ) in relation to the applied voltage (V) with respect to the amount of Mn in the composite vapor-deposited film as a parameter for the organic EL device of Example 4.
- FIG. 6 is a graph showing the light reflectance of the Al film containing Mn at 0.5 at.%, 3. Oat.%, And 10.95 at.%, Respectively, as a function of wavelength. Explanation of reference numerals
- FIG. 1 is a cross-sectional view showing a schematic structure of the organic EL device 10.
- an anode 5 made of ITO or the like
- an organic EL layer 4 an insulating electron injection layer 2
- a cathode 1 composed of a composite vapor-deposited film 3 having a gradient composition
- a DC voltage 7 is applied between the anode 5 and the cathode 1 to cause the organic EL layer 4 to emit light.
- the substrate 6 was 0.5 mm thick glass
- the anode 5 was a 300 nm thick ITO film
- the organic EL layer 4 was 40 nm thick Alq (8-hydroquinquinoline aluminum complex. ).
- the insulating electron injection layer 2 is 0.5 to 5 nm thick and is made of an alkali metal or alkaline earth metal oxide, and also has a fluoride power.
- an alkali metal or an alkaline earth metal it is preferable to use at least one of Li, Na, K, Cs, Ca, Sr and Ba having a work function of less than 3.OeV.
- the fluoride LiF or CsO is preferably used.
- a 2 nm-thick LiF layer was used as the insulating electron injection layer 2.
- a composite vapor-deposited film 3 having a gradient composition is vapor-deposited on the insulating electron injection layer 2.
- the composite vapor-deposited film 3 is substantially composed of 4. a low work function metal having a work function of less than OeV and 3. a low resistivity metal having a specific resistance of less than ⁇ 10 " 6 ⁇ ⁇ cm.
- a low work function metal is contained at a concentration of 70 at.% Or more in the vicinity of the boundary between the composite vapor deposition film 3 and the insulating electron injection layer 2.
- a low resistivity metal is contained at a concentration of 70 at.
- the concentration of the low work function metal gradually decreases as going upward from the electron injection layer 2, and the concentration of the low resistivity metal gradually increases. I have.
- the composite vapor-deposited film 3 having a gradient composition is formed of a columnar composite vapor-deposit composed of a core material made of a low work function metal and a low resistivity metal sleeve covering the outer periphery thereof.
- a low work function metal and a low resistivity metal were deposited by heating in vacuum.
- the cut piece obtained by cutting the columnar composite vapor deposition material to an appropriate length shows a low work function metal on the cut surface. If a metal having a higher vapor pressure than the low resistivity metal is used as the low work function metal, the low work function metal evaporates earlier than the low resistivity metal, so that the low work function metal is deposited on the electron injection layer.
- a layer having a concentration of 70 at.% Or more is formed.
- the concentration of the low work function metal gradually decreases, and the concentration of the low resistivity metal gradually increases.
- the vapor of the low work function metal disappears, resulting in a composition film mainly composed of a low resistivity metal.
- the organic EL device of Example 1 has the structure shown in FIG. 1 described above, and has a 2 nm-thick LiF layer as an insulating electron injection layer and a composite vapor deposition film having a gradient composition.
- An average composition film of 1.66 at.% Mg and the remaining Al force was used.
- Mg is a low work function metal
- A1 is a low resistivity metal.
- the average composition of the film is represented by the composition of the vapor deposition material used for vapor deposition.
- the composite vapor-deposited film having a gradient composition formed here is moved from the final vapor deposition surface (upper surface) to the initial vapor deposition surface.
- FIG. 2 shows the results of the Auger analysis in the film thickness direction up to (the boundary with the LiF layer). From Fig. 2, the concentration of Mg is 70at.% Or more near the boundary with the LiF layer (near 0.2 m), and the concentration of A1 is 70at.% Or more near the top surface (near Ojum). You can see that In the meantime, the Mg concentration decreases toward the upper surface, and the A1 concentration increases. In Fig. 2, elements such as oxygen and nitrogen other than Mg and A1 detected by the Auge analysis are omitted, so that the total concentration of Mg and A1 does not become 100%.
- FIG. Fig 3 A conventional organic EL device in which a pure aluminum film was formed on a LiF electron injection layer had a gradient composition of 1.66 at.% Mg balance A1 directly on the organic EL layer without a LiF electron injection layer.
- the current was also measured for the conventional organic EL device with a composite vapor-deposited film formed and the comparative organic EL device with a composite vapor-deposited film having a gradient composition of 6.62 at.% Mg balance A1 on the LiF electron injection layer.
- the relationship between the density and the applied voltage is also shown.
- the high specific resistance of Mg was offset by the adverse effect, and the characteristics were almost the same as those of the organic EL device in which the pure aluminum film was formed on the LiF electron injection layer.
- 0. lat.% Mg balance The current density of an organic EL device having a composite vapor-deposited film with a gradient composition of A1 was separately investigated. The characteristics of an organic EL device with a pure aluminum film formed on a LiF insulating electron injection layer was slightly exceeded. 0. lat.% Mg
- the balance Mg content is low, as in the case of a composite vapor-deposited film having a gradient composition of A1. In the case where the Mg specific resistance is high, there is almost no effect. The effect of the function hardly appears. Therefore, Mg must be included in excess of 0.
- the composite vapor deposition film having a gradient composition formed on the LiF insulating electron injection layer was replaced with 1.66 at.% Mg—remainder A1 of Example 1.
- the relationship between the current density and the applied voltage was measured for each of the organic EL devices as 1.75 at.% Mg balance Ag, 1.30 at.% Mg balance Cu, and 1.60 at.% Mg balance Au.
- the results are shown in the graph of FIG. FIG. 4 also shows the case of 1.66 at.% Mg—remainder A1 for comparison.
- the composite vapor deposition film having a gradient composition formed on the LiF insulating electron injection layer was replaced with 1.66 at.% Mg—the remainder Al in Example 1.
- 0.7at.% Li-balance Al, 0.7at.% Na-balance Al, 0.7at.% Ca-balance Al, 0.7at.% Sr-balance Al, 0.75at.% Ba-balance Al For each of the organic EL devices, a DC voltage of DC 10 V was applied between the anode and the cathode, and the current density was measured. Table 2 shows the measurement results of the current density.
- a composite vapor-deposited film having a gradient composition containing Li, Na, Ca, Sr or Ba can be used for the organic EL device of the present invention.
- Li, Na, Ca, Sr or Ba is contained in the composite vapor deposition film in excess of 0.lat.%, The current density becomes larger than that of the pure aluminum film, and the low work function is reduced. The effect can be demonstrated.
- the composite vapor deposition film having a gradient composition formed on the LiF insulating electron injection layer was replaced with 1.66 at.% Mg—remainder A1 of Example 1.
- Mn The remainder is A1.
- the relationship between the current density of the organic EL layer and the applied DC voltage was measured for each OLED device in which the Mn content of the composite deposited film was changed from Oat.% To 10.95 at.%. Is shown in FIG. When the Mn content is 0.8 at.%, The current density is almost the same as the current density of the pure aluminum film (Mn content: Oat.%), And when the Mn content exceeds 0.8 at. The current density is lower than that of the aluminum film.
- the current density is about 1Z2, which is much higher than without LiF.
- Mn has a work function of less than 4.OeV
- the power that can increase the current density by including it in the cathode of the organic EL device of the present invention can increase the low work function effect of Mn because the specific resistance of Mn is large.
- the Mn content in the composite vapor-deposited film having a gradient composition needs to be 0.1 to 0.8 at.%. Since the specific resistance of Mn is large, when Mn is added in excess of 0.8 at.%, The low work function effect of Mn is lost.
- FIG. 6 shows the results of measuring the light reflectance for wavelengths of up to 700 nm.
- the light reflectance of each composite vapor-deposited film is expressed as a percentage based on the light reflectance of the pure aluminum film. From Fig.
- the organic EL device of the present invention has a thin insulative electron injection layer and a composite vapor-deposited film having a gradient composition as a cathode adjacent to the organic EL layer. It is expected to be used for flat panel displays that can achieve a large luminous efficiency and have a fast response speed and have no viewing angle dependence, as compared with conventional ones.
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Abstract
Description
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004183376A JP2006012428A (ja) | 2004-06-22 | 2004-06-22 | 有機el用電極 |
| JP2004-183376 | 2004-06-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2005125284A1 true WO2005125284A1 (ja) | 2005-12-29 |
Family
ID=35510163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2005/011018 Ceased WO2005125284A1 (ja) | 2004-06-22 | 2005-06-16 | 有機el素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2006012428A (ja) |
| KR (1) | KR20060035790A (ja) |
| WO (1) | WO2005125284A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004116A (ja) * | 2010-06-16 | 2012-01-05 | Samsung Mobile Display Co Ltd | 有機発光素子及びその製造方法 |
| JP2012190549A (ja) * | 2011-03-08 | 2012-10-04 | Denso Corp | 有機el素子 |
| JP2022177473A (ja) * | 2021-05-18 | 2022-12-01 | 株式会社アルバック | 有機発光素子、成膜方法、及び成膜装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011065897A (ja) * | 2009-09-17 | 2011-03-31 | Toshiba Corp | 有機el装置 |
| JP6336042B2 (ja) | 2014-03-18 | 2018-06-06 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
| KR101668030B1 (ko) | 2014-08-21 | 2016-10-21 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
| JP7636963B2 (ja) * | 2021-05-18 | 2025-02-27 | 株式会社アルバック | 有機発光素子、成膜方法、及び成膜装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11111467A (ja) * | 1997-09-30 | 1999-04-23 | Minolta Co Ltd | 有機エレクトロルミネセンス素子 |
| JP2001052877A (ja) * | 1999-08-05 | 2001-02-23 | Toyota Motor Corp | 有機エレクトロルミネセンス素子 |
| JP2004010918A (ja) * | 2002-06-04 | 2004-01-15 | Hitachi Metals Ltd | 複合蒸着材およびその製造方法、複合蒸着膜、複合蒸着膜を有する表示装置 |
-
2004
- 2004-06-22 JP JP2004183376A patent/JP2006012428A/ja active Pending
-
2005
- 2005-06-16 KR KR1020067002307A patent/KR20060035790A/ko not_active Ceased
- 2005-06-16 WO PCT/JP2005/011018 patent/WO2005125284A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11111467A (ja) * | 1997-09-30 | 1999-04-23 | Minolta Co Ltd | 有機エレクトロルミネセンス素子 |
| JP2001052877A (ja) * | 1999-08-05 | 2001-02-23 | Toyota Motor Corp | 有機エレクトロルミネセンス素子 |
| JP2004010918A (ja) * | 2002-06-04 | 2004-01-15 | Hitachi Metals Ltd | 複合蒸着材およびその製造方法、複合蒸着膜、複合蒸着膜を有する表示装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004116A (ja) * | 2010-06-16 | 2012-01-05 | Samsung Mobile Display Co Ltd | 有機発光素子及びその製造方法 |
| JP2012190549A (ja) * | 2011-03-08 | 2012-10-04 | Denso Corp | 有機el素子 |
| JP2022177473A (ja) * | 2021-05-18 | 2022-12-01 | 株式会社アルバック | 有機発光素子、成膜方法、及び成膜装置 |
| JP7705734B2 (ja) | 2021-05-18 | 2025-07-10 | 株式会社アルバック | 有機発光素子、成膜方法、及び成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006012428A (ja) | 2006-01-12 |
| KR20060035790A (ko) | 2006-04-26 |
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