WO2005116288A1 - 多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 - Google Patents
多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 Download PDFInfo
- Publication number
- WO2005116288A1 WO2005116288A1 PCT/JP2004/007847 JP2004007847W WO2005116288A1 WO 2005116288 A1 WO2005116288 A1 WO 2005116288A1 JP 2004007847 W JP2004007847 W JP 2004007847W WO 2005116288 A1 WO2005116288 A1 WO 2005116288A1
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- WIPO (PCT)
- Prior art keywords
- target
- vacuum
- thin film
- ultra
- high vacuum
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Definitions
- Ultra-high vacuum sputtering equipment for continuous formation of multilayer thin films and ultra-high vacuum sputtering method for continuous formation of multilayer thin films
- the present invention relates to an ultra-high vacuum sputtering technique for continuously forming a multilayer thin film by continuously forming a multilayer thin film by using a sputtering method.
- the plate 50 held by the substrate holder 21 and the target 6 '0 held by the target holder 26 are provided on the notch V-space 20 maintained in a vacuum state. (Such as T i • P t) are placed facing each other.
- the target holder 26 has an electrode, and has a potential difference between the substrate 50 and the target 60.
- Patent Document 1 As a technique for continuously forming a multilayer film by using the sputtering method described above, a method of moving a substrate with multiple electrodes as disclosed in Patent Document 1 is known. Many have been used.
- Patent Document 1 Japanese Patent Application Laid-Open No. H10-150.210
- Patent Literature 2 Japanese Patent Application Laid-Open No. 2000-25056
- a first invention is an ultra-high-vacuum notching apparatus for continuously forming a multilayer thin film using a sputtering method, which comprises: It is characterized by having a plurality of targets in the champer and having a target exchange function that enables a single electrode to continuously exchange targets on the electrodes.
- the target exchange function is selected from a target storage unit that stores a plurality of targets in a vacuum channel and a target storage unit.
- a target carrier for taking out the target and disposing the target on the electrode.
- a third invention is characterized in that the target storage body is built in or attached to an empty channel.
- a vacuum chamber equipped with a vacuum pump and a pass box equipped with a vacuum pump are connected to each other with a knob, so that a vacuum chamber and / or a box can be connected without breaking a vacuum state. It is characterized in that a substrate or a target can be transferred between substrates.
- the fifth invention is characterized by having a heating function of heating the substrate to room temperature to 1200 ° C.
- Sixth invention in the vacuum tea Nba 1 0 1. It is characterized by having a vacuum function for achieving a vacuum state on the order of Torr.
- the seventh invention is an ultra-high-intensity sputtering method for continuously forming a multi-layer thin film by continuously forming a multilayer film using a sputtering method.
- Target power "Target selection procedure for selecting one target", and a target for extracting the selected target and placing it on a single electrode And a step of transporting the target, and the target on the electrode can be continuously replaced by a single electrode.
- a device can be made compact by storing a plurality of targets in a “target storage body” and transferring the force to a single electrode (target holding body). If the equipment can be miniaturized, the inside of the equipment (vacuum chamber) is flushed to a high vacuum. Therefore, a high-quality thin film can be formed.
- the size of the substrate can be increased, the size of the substrate can also be increased.
- New target ⁇ A new substrate is to be placed. “Nos box J and ⁇ * chamber” are connected by pulp so that both are kept in the same vacuum state. As a result, used targets and substrates can be replaced continuously without breaking the vacuum, and the equipment can be operated efficiently and can be operated.
- a high-quality single-crystal thin film can be formed.
- This technology can be used to form a wide variety of thin films such as metals, semiconductors, and insulators (or organic and inorganic materials).
- FIG. 1 is a conceptual diagram of a sputtering apparatus according to the present invention
- FIG. 2 is a graph showing a degree of quality of a single crystal thin film according to a substrate temperature
- FIG. FIG. 4 is an explanatory diagram showing a sputtering method.
- 1 Snuttering device 10 vacuum chamber, 1 1 Snotter gas inlet, 12 target carrier, 15 sputter gas, 20 sputter ring Spacer, 21 Board holder (heater), 26 target holder (electrode), 29 grid, 30 target storage box, 40 pass box Substrate, 50 substrate (semiconductor substrate), 60 target, 70, 71 turbo molecular pump, 78, 79 valve
- FIG. 1 shows a conceptual diagram of a sputtering apparatus according to the present invention.
- a snorting apparatus 1 is an apparatus for manufacturing a semiconductor single crystal thin film.
- the snorting apparatus 1 includes a vacuum channel 10 and a pass box 40.
- the notch spacing 20 includes a substrate holder 21 for holding the semiconductor substrate 50 and a target holder 26 for holding the target 60. Sex grids are provided opposite each other so as to sandwich 29.
- the target holder 26 is also an electrode, and constitutes a single electrode in the snowboard space 20. The target holder 26 and the target holder 26 are connected together. There is a potential difference between the pads 29.
- the gas is injected from the vacuum gas inlet 11 of the vacuum chamber 10.
- Ar is used as a sputtering gas
- the Ar atoms are also incorporated as impurities into the film.
- the amount of Ar + ions on the substrate surface by applying a DC potential to the grid 29, the amount of Ar atoms taken into the film can be reduced. May be reduced
- the target h 60 placed on the target holding body 26 is stored in parallel with the target storage box 30.
- the target storage box 30 must be replaced with the required ones as needed.
- the target 60 is housed in the target storage box V box 30, no extra space is required, and the vacuum channel 10 can be replaced.
- the size of the target is not subject to the restrictions described in Patent Document 2, and a large-sized target can be used. Since large-sized targets can be used, the size of the semiconductor substrate 50 can be increased.
- the target storage box 30 can store various types of targets, and can produce various semiconductor substrates.
- the types of targets include, for example, InGaN-based LEDs, Si-doped, Mg-doped, Non-doped, high-speed transistor SiGeTr development, and P-type. It is preferable to store more than 1 ° types of impurities, such as impurity-doped and n-type impurity-doped.
- the target storage box 30 is an integral type built in the vacuum chamber 10, but is a separate type that is attached to the vacuum chamber 10. It may be a member of the group.
- Vacuum chamber 10, along with nos box 40, is connected via a knob 79. And turbo molecular pumps 70 and 71 of a vacuum pump.
- the vacuum chamber 10 and the pass box 40 are made to have the same vacuum inside, so that the vacuum chamber 10 and the pass box 40 can be passed through the lube 78 without breaking the vacuum state.
- the transfer of goods during the period 40 is possible. That is, each time the semiconductor substrate 50 or the target 60 of the vacuum chamber 10 mm is replaced with a new semiconductor substrate 50 or the target 60, the vacuum state is broken. This allows for efficient operation.
- the vacuum tea Nba is, 1 0 one 1.
- the concentration of residual impurities such as 0CN inside the apparatus (in the film) is 10 15 to: L 0 16 cm— 3 orders or less. It can be reduced and can be used as a material for devices.
- the degree of vacuum is on the order of 10 to 16 to 17 Torr, and the residual amount of O, C, N, etc. in the film after film formation is large. It had a high impurity concentration and could not be used as a material for devices.
- the substrate holder 21 heats the semiconductor substrate 50 as a heater.
- the semiconductor substrate 50 By heating the semiconductor substrate 50 to between room temperature and 1200 ° C., a high-quality single-crystal thin film can be formed as shown in FIG.
- the upper limit of the heating temperature of the substrate was usually about 600 ° C., a single crystal film having sufficient crystallinity could not be obtained.
- the present invention can be widely applied to a multilayer thin film manufacturing technology in all fields using a sputtering method, in addition to a semiconductor manufacturing technology.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/007847 WO2005116288A1 (ja) | 2004-05-31 | 2004-05-31 | 多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 |
JP2005518109A JP3834757B2 (ja) | 2004-05-31 | 2004-05-31 | 多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/007847 WO2005116288A1 (ja) | 2004-05-31 | 2004-05-31 | 多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 |
Publications (1)
Publication Number | Publication Date |
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WO2005116288A1 true WO2005116288A1 (ja) | 2005-12-08 |
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PCT/JP2004/007847 WO2005116288A1 (ja) | 2004-05-31 | 2004-05-31 | 多層薄膜連続形成用超高真空スパッタリング装置及び多層薄膜連続形成用超高真空スパッタリング方法 |
Country Status (2)
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JP (1) | JP3834757B2 (ja) |
WO (1) | WO2005116288A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007197749A (ja) * | 2006-01-25 | 2007-08-09 | Eiko Engineering Co Ltd | マルチターゲットスパッタリング装置 |
CN104233192A (zh) * | 2014-08-27 | 2014-12-24 | 宁波英飞迈材料科技有限公司 | 一种换靶装置及其使用方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110487609B (zh) * | 2019-09-06 | 2024-04-19 | 仪晟科学仪器(嘉兴)有限公司 | 超高真空原位薄膜刻蚀电极生长系统 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262969A (ja) * | 1984-06-11 | 1985-12-26 | Tdk Corp | スパツタタ−ゲツト装置 |
JPS61576A (ja) * | 1984-06-12 | 1986-01-06 | Mitsubishi Metal Corp | 多層膜形成用スパツタリング装置 |
JPS63143261A (ja) * | 1986-12-06 | 1988-06-15 | Sumitomo Light Metal Ind Ltd | スパツタリングによる多層膜の形成法 |
JPH03170671A (ja) * | 1989-11-29 | 1991-07-24 | Hitachi Ltd | スパツタ装置、及びターゲツト交換装置、並びにその交換方法 |
JPH0586471A (ja) * | 1991-09-27 | 1993-04-06 | Oki Electric Ind Co Ltd | スパツタリング装置 |
JPH10147863A (ja) * | 1996-09-18 | 1998-06-02 | Matsushita Electric Ind Co Ltd | 成膜装置とそのターゲット交換方法 |
JP2000273631A (ja) * | 1999-03-24 | 2000-10-03 | Olympus Optical Co Ltd | スパッタリング装置 |
JP2002256425A (ja) * | 2001-02-28 | 2002-09-11 | Eiko Engineering Co Ltd | スパッタリング用マルチターゲット装置 |
-
2004
- 2004-05-31 JP JP2005518109A patent/JP3834757B2/ja not_active Expired - Fee Related
- 2004-05-31 WO PCT/JP2004/007847 patent/WO2005116288A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262969A (ja) * | 1984-06-11 | 1985-12-26 | Tdk Corp | スパツタタ−ゲツト装置 |
JPS61576A (ja) * | 1984-06-12 | 1986-01-06 | Mitsubishi Metal Corp | 多層膜形成用スパツタリング装置 |
JPS63143261A (ja) * | 1986-12-06 | 1988-06-15 | Sumitomo Light Metal Ind Ltd | スパツタリングによる多層膜の形成法 |
JPH03170671A (ja) * | 1989-11-29 | 1991-07-24 | Hitachi Ltd | スパツタ装置、及びターゲツト交換装置、並びにその交換方法 |
JPH0586471A (ja) * | 1991-09-27 | 1993-04-06 | Oki Electric Ind Co Ltd | スパツタリング装置 |
JPH10147863A (ja) * | 1996-09-18 | 1998-06-02 | Matsushita Electric Ind Co Ltd | 成膜装置とそのターゲット交換方法 |
JP2000273631A (ja) * | 1999-03-24 | 2000-10-03 | Olympus Optical Co Ltd | スパッタリング装置 |
JP2002256425A (ja) * | 2001-02-28 | 2002-09-11 | Eiko Engineering Co Ltd | スパッタリング用マルチターゲット装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007197749A (ja) * | 2006-01-25 | 2007-08-09 | Eiko Engineering Co Ltd | マルチターゲットスパッタリング装置 |
CN104233192A (zh) * | 2014-08-27 | 2014-12-24 | 宁波英飞迈材料科技有限公司 | 一种换靶装置及其使用方法 |
Also Published As
Publication number | Publication date |
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JP3834757B2 (ja) | 2006-10-18 |
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