TW201107502A - Film forming device, film forming method, and organic el element - Google Patents

Abstract

In order to prevent the deterioration of a metallic layer that forms the electron-injecting layer of an organic EL element, a film forming device (PM1) is equipped with a processing container (100) that carries out desired processes upon a substrate there within; a vapor deposition source (200) (a first vapor deposition source) that stores organic materials, and that heats and vaporizes the stored organic materials; first spray mechanisms (120a-120f) that are contained within the processing container (100) and connected to the vapor deposition source (200), and that sprays the organic materials vaporized in the vapor deposition source (200) towards the substrate (G) in the processing container; a vaporizer (300) (a second vapor deposition source) that stores an alkali metal such as lithium, and that heats and vaporizes the stored alkali metal; and a second spray mechanism (130) that is contained within the processing container (100) and connected to the vaporizer (300), and that sprays the alkali metal vaporized in the vaporizing device (300) towards the substrate (G) in the processing container.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus, and more particularly to a film structure including an organic EL element and a film forming apparatus and a film forming method for forming the film structure. [Prior Art] 〇 〇 In recent years, an organic display using an organic EL (Organic Electroluminescence) element that emits light using an organic compound has been attracting attention. This organic EL device has characteristics such as self-luminous emission, low reaction rate, and low power consumption. Therefore, compared with the liquid crystal display, not only the image is more beautiful, but also a backlight is not required, and the thickness can be reduced, and it is expected to be applied to a display portion of a portable device. The organic EL element is formed on a glass substrate, and has an interlayer structure in which an organic layer is sandwiched between an anode layer and a cathode layer. When a voltage of a number V is externally applied to the organic EL element to flow a current, electrons are injected from the cathode side into the organic layer, and the electrons are injected from the anode side into the organic layer. By injecting electrons and holes, the organic material vapor is brought into an excited state, and when the electrons and the holes are combined again, the excited machine is returned to the substrate state, and the light is in the form of light. Explain its excess energy. In the case of a cathode layer, an organic EL element can be manufactured by efficiently injecting an organic layer into an electron if the electron injection energy barrier can be reduced. Therefore, generally, at the interface between the organic layer and the cathode = 201107502, an electron injecting layer composed of a material such as a metal having a lower work function is formed (for example, refer to the non-patent literature: "Bright organic electroluminescent Apparatus having a metal-dopedelectron-injecting layer" 1998 American Institute of Physics, Applied Physics Letters, VOLUME 73, NUMBER 1998) 〇 Non-patent literature discloses the formation of an organic layer doped with a metal between each cathode and the illuminant layer. As an example of the blending, there may be mentioned examples such as i) or from Sm). The main genus of the same base is suitable for forming an electron injection because of a small work function: it is 'another side' due to an alkali metal In the treatment chamber where the high-activity body water is eight or empty, it is still easy to exist in the state where the above-mentioned impurities are present on the surface to be added, and the metal such as lithium and the inferior 4 η emulsification clock (U2〇) insulation of several films are required. And made; Therefore, considering that the metal or the like of lithium is known to be abruptly formed, the seed formation is very flawless. Even so, the method of forming a very flawed η is degraded, and the organic anus-du is still in the surface of the film; In order to understand the front ΐ: the performance of the formation of the electron injection layer of the gold two-layer invention system provides a ρ sub-injection rate of the film formation of the film 2,: improve the metal layer of the film formation method and Organic EL element. According to the present invention, in order to solve the above problems, a film forming apparatus is provided, comprising: a processing container in which a desired treatment is applied to the object to be processed; and the first steaming The plating source is an organic material, and the stored organic material is heated to be vaporized; the first discharge mechanism is built in the processing container and connected to the first vapor deposition source, and the first vapor deposition source is The organic material vaporized in the space is ejected toward the object to be processed in the processing container; the second vapor deposition source is an alkali metal material, and the metal material to be stored is heated to vaporize; and the second ejecting mechanism is The inside of the processing container is connected to the second vapor deposition source, and the alkali metal material vaporized at the second vapor deposition source is discharged toward the object to be processed in the processing container. Thereby, the first discharge means capable of ejecting the organic material vaporized in the first vapor deposition source toward the object to be processed in the processing container, and the alkali which can be vaporized at the second vapor deposition source are provided. The second discharge mechanism that ejects the metal material toward the object to be processed in the processing container. Thereby, the first step of ejecting the vapor of the material of the organic material can be provided in one processing container.

The discharge mechanism and the second discharge mechanism that ejects the vaporized atoms of the alkali metal. Thereby, after the organic layer is formed, it is not necessary to transport the object to be processed to another processing apparatus, and an alkali metal layer can be formed in the same processing chamber. Thereby, impurities such as moisture, nitrogen, and oxygen can be prevented from adhering to the surface of the organic layer. Thereby, it is possible to prevent the alkali metal layer from reacting with the impurities adhering to the surface of the organic layer to be oxidized, and to form an insulator or the like to deteriorate the film. As a result, the electron injection efficiency can be improved, and a high-performance organic EL 201107502 component can be manufactured. Further, since the deterioration of the metal layer can be prevented as described above, a thicker film can be formed as compared with the prior art. For example, an alkali metal layer having a thickness of 0.5 nm to 100 nm can be formed. By forming a metallographic layer of a considerable thickness, unevenness in performance of the organic EL element can be suppressed. Further, by providing a metal layer having a relatively large thickness, the metal layer can function not only as an electron injecting layer but also as a cathode of the organic EL element. However, in order to prevent the active alkali metal layer from reacting with residual moisture, nitrogen, oxygen, and the like in the processing container, it is necessary to protect the alkali metal layer immediately after the formation of the alkali metal layer with a protective film such as a metal oxide or a NiN oxide film such as SiN. Check the metal layer. In this case, the film forming apparatus may further include: a third vapor deposition source for storing a protective film material, heating the material for the protective film to be vaporized; and a third discharge mechanism built in the treatment The container is connected to the third vapor deposition source, and the material for the protective film vaporized at the third vapor deposition source is discharged toward the object to be processed in the processing container. Further, a sputtering apparatus may be further provided in the processing container to perform sputtering on a sputtering target composed of a material for a protective film. A mounting table that carries the object to be processed that is transported to the processing container may be provided, and the object to be processed that can be placed upward or downward or in the longitudinal direction may be directed from the first discharge mechanism toward the first 2 The side of the discharge mechanism is slipped. A roller may be provided at both ends of the processing container, and the rollers of the two rollers of the 201107502 end may be rolled so that the film of the roller attached to the both ends is directed from the first ejection mechanism toward the second ejection mechanism side. mobile. The processing container may be provided with an exhaust device at least on the side of the first discharge mechanism. A partition wall may be provided between the first discharge mechanism and the second discharge mechanism. The first vapor deposition source may be formed by a plurality of crucibles accommodating a plurality of organic materials, and the first ejecting mechanism may be formed by a plurality of ejecting portions connected to a plurality of crucibles, and vaporized in the plurality of crucible spaces. A plurality of organic materials are rewound, and each of the plurality of organic materials is ejected from the plurality of ejecting portions provided in the first ejecting mechanism, whereby a plurality of organic materials are stacked on the object to be processed to form a continuous film of the organic layer. The metal test material can be any of a clock, a nano, a nano, a potassium, and a gamma. Further, in order to solve the above problems, according to another aspect of the present invention, a film forming method is provided in which an organic material accommodated in a first vapor deposition source is heated to be vaporized, and is vaporized at the first vapor deposition source. The organic material is ejected from the first ejecting mechanism connected to the first vapor deposition source into the processing container, and an organic layer is formed in the processing container in the processing container by the organic material to be ejected, and is stored in the first layer. (2) the alkali metal of the vapor deposition source is heated to be vaporized, and the alkali metal vaporized at the second vapor deposition source is ejected from the second ejection mechanism connected to the second vapor deposition source into the processing container. The alkali metal to be sprayed forms a metal layer on the organic layer of the object to be treated in the processing container immediately. At this time, the metal layer may also have a thickness of 0.5 nm to 100 nm. Thereby, the metal layer functions as an electron injection layer and an electrode. 7 201107502 Gasification 3 steaming _ protection lang material heating to remove the protective film material from the source of the m reduction source so far from the third discharge mechanism of the f 4 reduction source to the treatment capacity cry = by: sprayed protective film The material immediately forms a protective film on the metal layer of the object to be treated in the processing container. The ruthenium plating plate may be formed by the inner 于 于 于 该 该 该 , , , , , , , 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该The processing of the outside of the container of the Jingdian money to engrave the use of the double-film is used by the Suzuki device outside the processing container. The film material: the: ♦ money plating target for sputtering, by accepting Immediately on the machine layer = the film is outside the processing container in the metal of the object to be treated. The gold is placed outside the processing container. The insect is engraved by the outside of the container: it is placed outside the container; Two == For the description of 4:: There are other aspects of the invention: the τ system of the analytic body 3 has an organic layer, which is formed at the location of the degree S gold = system: the organic layer forms an electron Injecting sound and either of them 'acts to play the role of 曰 and exemption; protective film, formed on the layer of the 201107502 genus. Accordingly, by continuously forming the organic layer and the metal layer in the same space in the processing container, it is possible to prevent residual moisture, nitrogen, oxygen, etc. in the alkali metal and the processing container at the boundary between the metal layer and the organic layer. Deteriorated by the reaction. Thereby, a high-performance organic EL device capable of maintaining high electron injection efficiency can be manufactured. In order to solve the above problems, according to another aspect of the present invention, there is provided a film forming apparatus comprising: a processing container in which a desired treatment is applied to a treated body; and a first vapor deposition source is stored The organic material is heated to vaporize the stored organic material, and the first discharge mechanism is embedded in the processing container and connected to the first vapor deposition source, and is organicated at the first vapor deposition source. The material is ejected toward the object to be processed in the processing container; the first sputtering device is embedded in the processing container, and is sputtered with a sputtering target composed of an alkali metal material; and the second sputtering device is internally It is hidden in the processing container, and the splashing of the material for the protective film is lightly extinguished. Ο The processing container may be provided with an exhaust device at least on the side of the first discharge mechanism. A partition wall may be provided between the first discharge mechanism and the second discharge mechanism. As described above, according to the present invention, deterioration of the metal layer forming the electron injecting layer can be prevented, and electron injection efficiency of the metal layer can be improved. [Embodiment] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description and the appended drawings, the same reference numerals are given to the constituent elements having the same structures and functions, and the repeated description is omitted. In addition, the following description will be made in order. [1] The first embodiment [1-1] The overall structure of the substrate processing system [1-2] The internal structure of the film forming apparatus [1-3] The modification of the first embodiment [2] The second embodiment [2] -1] Internal structure of film forming apparatus [3] Third embodiment [3-1] Internal structure of film forming apparatus [3-2] Modification of third embodiment [4] Fourth embodiment [1] 1 Embodiment [1-1] Overall structure of a substrate processing system. First, the overall configuration of a substrate processing system including the film forming apparatus of the first embodiment will be described with reference to Fig. 1 . The organic EL device was fabricated in a cluster substrate processing system Sys as shown in Fig. 1. The substrate processing system S y s connects a plurality of processing containers to the cluster side. In fact, the substrate processing system Sys has: load lock device LLM (Load Lock Module), transport device TM (Transfer 201107502

Module), cleaning device (pretreatment chamber) CM (Cleaning Module), film forming device PM1 (Process Module), residual device PM2, CVD (Chemical Vapor Deposition) device PM3 and sputtering device PM4. The film forming apparatus PM1 corresponds to a film forming apparatus which can continuously form an organic layer and an alkali metal layer in the same processing container.加载 加载 The load lock device LLM can transport the glass substrate G (hereinafter referred to as the substrate G) conveyed from the atmosphere side to the transfer device TM in a reduced pressure state by holding the inside of the vacuum transfer chamber in a reduced pressure state. The transporting device TM is provided with a plurality of joints capable of flexing and stretching and rotating at the approximate center, and the transfer arm is initially transported by the transport arm Απη to transport the substrate 〇 from the load interlock device LLM to the cleaning device CM. An IT0 (Indium Tin 〇xide) as an anode layer is formed on the substrate G to clean the device CM to remove contaminants (mainly organic matter) attached to the surface thereof. Fig. 2 is a view showing the process of an organic EL element. As shown in Fig. 2 (8), the cleaned substrate G is moved to a state where the film is placed as shown in Fig. 2(b), and the organic layer 2 is placed on the surface of the substrate by evaporation of money. After the formation of the organic layer, the film formation system of the layer 3 〇 = metal layer 3 立即 is formed by the formation of the same layer as shown in Fig. 2 (4). Forming a metal planer, the resistance function is lower _ metal is preferred, especially the clock, the active body and: ί铷 is preferred. Considering that these alkali metals are highly acidic and unstable, especially in the phenomenon of uniformity of thin enamel, it is difficult to achieve in-plane view under the Tai (4) (4) temple brother. This embodiment facilitates the film forming apparatus pM1 11 201107502 in a space. The organic layer 2 and the gold are continuously formed. This embodiment exemplifies the use of lithium as the alkali metal. In this regard, the details are as follows. An example of the monthly situation, and secondly, the substrate G will be supported by the transport arm and will be transported to the record. As shown in the #^TM arm, the surface of the metal layer 30 is softly placed as shown in Fig. 2(d). Then, the arm attached to the gold transfer device TM is added and transported to the protective device for holding the PM4. The sputter is dried and mixed, and the flying protective film is deposited on the sputtered layer 30 of =. Thereby, as shown in the figure, the atomic layer is laminated on the gold to form the protective film 40. _2_^Heart layer 3 便 便 要 要 要 要 要 要 要 要 要 要 要 要 便 便 便 便 便 便 便 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心film. At this time, since the metal layer 30 is a film, sometimes the helmet is inscribed by a soft surname. Therefore, an IOT film-like transparent oxide film can be formed on the surface of the metal layer as shown in Fig. 2(d), and it is not necessary to perform soft etching. The 4G of Baolong can also make (4) the device ρΜ3 to replace the 贱4. At this time, as shown in Fig. 2 (4), first, the surface of the metal layer 30 is soft-etched to remove impurities attached to the surface of the metal layer 3. Then, the substrate G is transported to the CVD apparatus pm3 (the jCvd apparatus PM3 excites the electric power by the protective material gas, and the protective film 4 is formed on the metal layer of the substrate G by the excited plasma. Alternatively, as shown in FIG. 2(e), a protective film 12 may be formed on the metal layer 3, 201107502 40°. Further, as long as the gas is excited to generate a plasma, the substrate G is formed using the generated plasma. The device CVD device PM3 can also be a capacitive coupling type (parallel plate) plasma processing device, an inductively coupled plasma (ICP) plasma processing device, an ECR (Electron Cyclotron Resonance), a microwave plasma processing device, and the like. (Controller) The controller 50 has a ROM 50a, a RAM 50b, a CPU 50c, and an input/output I/F (user interface) 5〇d°R〇M50a, and the RAM 50b stores data or a control program (for example, 'to control the organic layer 2, the evaporation rate of the organic material at the time of film formation, or the evaporation rate of the metal of the metal layer 30 at the time of film formation, etc.) The devices of the substrate processing system Sys are controlled by the controller 5〇. CPU50C will The drive signal for controlling the transfer or process in the substrate processing system Sys is generated by the material or control program stored in the R〇M5〇a, RAM5〇b. The input/output I/F50d will be generated by the CPU5〇C. The driving signal is output to the substrate processing system Sys, and the sub-receiving is transmitted to the CPU 50c correspondingly from the response signal output from the substrate processing system Sys. [1_2] Internal structure of the film forming apparatus Next, the film forming apparatus pM1 will be described in detail with reference to FIG. Fig. 3 is a plan view of the present embodiment. (4) 13 201107502. The film forming apparatus PM1 has a processing container 1〇0, a vapor deposition source 200 as an i-then source, and a second The vaporization source of the vaporization source is a rectangular parallelepiped, and has a slidable mounting member 110, six i-th ejecting mechanisms 12Ga~, i second ejecting units 130, and The partition wall 140 and the partition wall 150. The side wall of the processing container is provided with a substrate gate valve H by opening/closing. The loading and unloading stage 110 is hung by Gao Zengke & not shown in the figure. Λ ΛΛ ΛΛ ΛΛ 罨 罨 电源 电源 电源 电源 电源 电源 电源 电源 电源 电源The substrate Γτ light-loaded by the gate valve 160a is light-sucking. The mounting stage 110 can be placed on the guide rail 110a provided on the top surface in a state where the substrate G is placed downward as described above. The second discharge mechanism 120a side slides toward the second discharge mechanism 130. Thereby, a certain plate G is attached in the order of the first discharge mechanisms 120a, 120b, 120c, and 120f to the second discharge mechanism 130. And moving in parallel above the jet outlets. The first ejection mechanisms 120a to 120f have the same shape and structure, and are disposed at equal intervals in parallel with each other. The inside of the ejection mechanism 12〇a to 12〇f has a rectangular shape in which a hollow (buffer space S) is formed, and the organic material vapor can be ejected from an opening provided at the center of the upper portion thereof. The lower portions of the first discharge mechanisms 120a to 120f are connected to the vapor deposition source 2A via the jth gas supply pipes 170a to 170f penetrating the bottom wall of the processing vessel 1 . In the same space of the processing container 100, the second ejection mechanism 13A is provided slightly away from the second ejection mechanism 120f. The lower portion of the second discharge mechanism 130 is connected to the second gas supply pipe 201107502 through the bottom wall of the processing container 1 = the gas supply pipe 170a to 17〇f and the supply pipe 18 are connected to the gasifier. The valve V V2 of the supply/cutting amount of the organic material or the metal material of the metal material. (4) U and control grips The discharge walls 14 120 and the second discharge mechanism 13 are provided with partition walls 14 〇 and 15 区分 for distinguishing the respective discharge mechanisms. By this, it is possible to prevent the first ejection mechanism l2a to 120f from being adjacent to each other.

The various organic materials and alkali metal materials ejected from the discharge port of the St. structure 130 are mixed with each other. The processing container is provided with an exhaust port i9〇a on the side of the i-th discharge mechanism. The exhaust device 195a that is connected to the exhaust port 190a is driven to discharge from the exhaust port 19〇a to the outside of the processing container by the first discharge mechanism 12〇a to 12〇f. Further, when the household appliance 1 is provided with the exhaust device 195b whose exhaust port is movably connected to the exhaust port DOb on the side of the second nozzle opening mechanism 130, the metal sprayed from the second discharge mechanism 13G can be detected. The residual atoms of the material vapor are discharged from the exhaust port 190b to the outside of the processing vessel. In particular, the Chengcai's gas piece by vapor deposition will fly to the processing capacity to reach the substrate. Shouting is that (4) at the base = body atom, it can also be detached from the substrate G and fly again into the processing volume. As described above, in the film formation by vapor deposition, the vaporized atoms tend to diffuse into a wide range in the processing container. Therefore, by discharging the residual organic material vapor from the first discharge mechanism 120a side, it is possible to suppress the organic material vapor from flying to the second discharge mechanism 15 201107502

It is possible to mix the metal layer 3〇 on the 130 side. Further, by transferring the remaining portion by the W side of the mechanism, it is possible to suppress the possibility that the organic layer 2 () is mixed with the side of the first structure 120a to 120f. In the film formation of the organic layer, only the exhaust device 195a is driven so that the residual organic vapor does not fly to the request side of the second nozzle-out mechanism, but in the film formation of the metal layer 3, the exhaust device 195b is spurred. So that the residual clock does not fly to the i-th discharge mechanism. In the film formation, the discharge capacity is maintained at ι〇2 to 1 (the pressure reduction state of about T3Pa by driving each of the exhaust devices 195a and 195b. The vapor deposition source 200 has six hooks having the same shape and structure. Disaster 2H) a ~ 冨. Each (four) inspection ~ Li each contains different organic materials A ~ F inside. The bottoms of the containers in which the organic materials A to F are accommodated are each embedded with a heater 2 to 22Qf. Each heater

22〇a~22Gf heating 'make (4) 21Ga~21Gf reach 2GG~50 (high temperature around TC' to control the gasification speed of organic materials A~F. In addition, the so-called gasification does not only mean the phenomenon that liquid becomes gas, but also package

A phenomenon in which a solid directly becomes a gas without passing through a liquid state (ie, sublimation).坩埚210a to 21〇f are provided with a gas line for supplying argon Ar. The organic material vapor Λ~F which is supplied from the gas line to the (4) and can be vaporized at each of the collapses 21〇a to 21〇f is transported to the first through the first gas supply officers 170a to 17〇f. The discharge mechanisms 12A1 to 12〇f' are ejected from the discharge ports of the first nozzles 120a to 120f to the inside of the processing container 1A. The vapor deposition source 200 is provided with an exhaust port 230. The container can be vacuumed by 16 201107502 internally maintained at the desired drive vent 240. The 170a to l70f in which the argon gas and the organic material vapor are circulated are also adjusted to the i, , and e tubes in the same manner as the crucible. When the organic material vapor is transported by argon gas, it can be liquefied and adhered to the second gas supply tubes ma to (10) or the like to prevent the material efficiency of the organic layer 20 from forming. Fine,

The handling capacity 1 100 is set to have a bell heating 300. The gasifier (4) is set up to store the container. The evaporation container Ds1 is connected to the power source Ds2. The electricity is applied according to the _ signal output from the control (4) 50, and the voltage is caused to flow to the evaporation container Ds, whereby the evaporation container Ds1 is heated to maintain the desired temperature. Thus, the amount of evaporation stored in the evaporation container Ds1 is completed. Further, the material accommodated in the swarf device Ds1 may be any one of a metallurgical material having a low work function, and may be a chain, a nano, a unloading, a recording j, or a singular. The gasifier 300 is coupled to the air pump 31G via a valve V3 whose opening degree can be adjusted. The inside of the gasifier 3 is controlled to a desired vacuum pressure based on the degree of opening of the purge valve V3 based on the drive signal output from the controller 5G. Further, the vaporizer 300 is coupled to the argon supply source 320 via a mass flow controller MFC and a valve V4 that adjust the gas flow rate. The mass flow controller MFC and the valve V4 are controlled based on the drive signal output from the controller 50 to adjust the supply/disconnection of argon gas and the flow rate. 17 201107502 The clock that is evaporated in the gasifier 3 is transported to the second discharge mechanism through the first supply pipe (10) by the amount of argon gas supplied to the inside of the gasifier 3〇〇. m, and ejected from the discharge port into the processing container. Further, the apparatus for ejecting the metal from the second ejecting mechanism 130 is not limited to the above-described vaporizer, and a mechanism for evaporating the alkali metal monomer and ejecting it may be used.

The second gas supply pipe 18 and the gas 300 having the argon gas and the bell are grasped to be fine. Temperature above C. Thereby, the evaporating speed can be controlled, and at the same time, it is prevented from being liquefied and adhered to the second gas supply pipe (10) or the like when it is transported by argon gas. Thereby, the material efficiency at the time of film formation of the metal layer 30 can be improved. Further, in order to form the metal layer 3, a vapor source of the same structure for forming the hook layer used in the organic layer 20 may be used instead of the vaporizer 300, or a heater such as a resistance heating plate may be used. The film forming apparatus PM1,, r, as described above, forms an organic layer by the organic material vapor bred from the second squirting mechanisms 120a to 120f.

20' Then, the metal layer 30 is continuously formed by the clock ejected from the second ejection mechanism 13A. Specifically, 'from the organic material vapor ejected from the first nozzle-out mechanism 12〇a to 丽', first, the organic material vapor ejected from the first ejecting mechanism (10) will advance at a fixed speed above the ejection mechanism. As shown in FIG. 4, the ITO (anode) on the substrate G is deposited on the substrate G' by the organic material vapor A discharged from the first discharge mechanism 120a to form a second layer of the electric layer. . Next, 18 201107502 When the substrate G is sequentially moved from the first discharge mechanism 12〇b to the i-th discharge mechanism 120f, the organic material vapors B to F discharged from the first discharge mechanisms 12〇b to 12〇f Each of them is deposited on the substrate G, whereby an organic layer (the second layer to the sixth layer) is sequentially formed. Finally, by depositing lithium ejected from the second ejecting mechanism 130 on the substrate G, the metal layer 3 is formed. Thus, deterioration of the organic layer 2 and the metal layer 3 can be prevented by continuously forming the organic layer 20 and the metal layer 30 in the same processing apparatus. This point will be specifically described. Since an alkali metal such as lithium or a planer has a small work function, it is suitable as a material for forming an organic injection layer of an element. On the other hand, on the other hand, since the alkali metal is a highly active substance, it is easy to react with moisture, nitrogen, and oxygen remaining in the room even in a treatment chamber in a high vacuum state. Therefore, when the metal layer 30 is formed on the surface of the organic layer 20 which is the base layer of the metal layer 3, and the metal layer 30 is formed thereon, the alkali metal formed at the boundary between the organic layer 2 and the metal layer 30 is formed. The metal layer 30 such as lithium oxide (Li 〇) is formed to be deteriorated by reacting with the impurities adhering to the organic layer. Therefore, it is conventionally known that the alkali metal changes into an insulator, and a method of forming a very thin lithium film is employed. However, even when a very thin film is formed, the in-plane uniformity of the film is deteriorated, and the performance of the organic EL element is uneven. On the other hand, in the film forming apparatus PM1 of the present embodiment, after the film formation of the organic layer 20, the substrate is transferred to the other processing chamber before the formation of the metal layer 3G. Therefore, the probability of impure attachment to the organic layer will be lower than that of 2011-07502. Therefore, in the same processing container, the probability of forming an insulator with the metal layer 3〇 immediately formed on the organic layer at the edge of the organic layer 2() becomes very low. , the electron injection efficiency of the metal layer 30 can be improved, and the photoelectric conversion efficiency of the organic layer can be improved. Further, the film formation apparatus PM1 according to the embodiment has the metal layer 30 at the boundary of the organic layer 2G as described above. The probability of reacting with impurities to form an insulator is very low, so that the efficiency of electron injection is not lowered, and a metal film having a thicker U-known technique can be formed. Therefore, depending on the film formation, PM1' can be formed, for example, The metal layer t having a thickness of 5 nm to ii nm can be managed to a thickness of the film formation process. By forming a metal layer 3G having a considerable thickness, the in-plane uniformity of the metal layer 3G can be improved, and the organic EL element can be suppressed. Further, by forming a metal layer 3 of a considerable thickness, it is possible to achieve electrodeposition of an electron injecting layer which is impossible to achieve due to an excessively thin film thickness in the prior art. Membrane device, by formation For example, a metal layer having a thickness of about 5 〇 mn to about 1 〇〇 nm allows the metal layer to function as an electron injection layer and an electrode (cathode). Further, by forming a metal layer 30 of a considerable thickness, for post engineering The protective film is sputtered, and the damage can be absorbed by the metal layer 30, and the damage caused by the sputtering on the organic layer 2 can be reduced. After the metal layer 30 is formed, the substrate G is transferred to the PM2 of FIG. 'The easy-to-react lithium metal layer 30 is soft etched to clean its surface (refer to Figure 2(d)). Then 'immediately transferred to the antimony device 20 201107502 PM4 'Let the argon ion coffin to knock out the rider ^ The splash formed by 35A1 or silver Ag is deposited on the metal layer 30 ~. After the collision, the argon atom Ag will accumulate.

40. The protective film 40 can form a protective film as shown in Fig. 3, so that light can be transmitted from the oxidized metal layer 3G of the laminated active material through the metal layer 30, and the portion must be allowed to pass light. The metal layer 30 is a thin gland. The metal layer 30 needs to form a thin film. At this time, it is etched. Therefore, it is possible to perform a soft oxide film as shown in Fig. 2(d), and it is possible to form an IT film like a transparent film on the surface of the layer 3G.

Further, the material of the metal layer 30 of the protective film 40 Q is a fermentable metal (highly activated body). However, the resin is applied to a resin other than silver or (iv). Point amine: ft film formation method] Therefore, a method of attacking by vapor deposition or CVD is required. In the case where only the organic EL element of the light is emitted, it is preferable to use silver or ?s having a high light transmittance as the protective film 4 (). Further, since the film is too thin to transmit light, in order to emit light from the ITCM, the film 40 needs to have a considerable thickness. Further, at this time, the protective film 4 〇 cannot use a resin that does not reflect light. On the other hand, in the case of the organic EL element which allows light to pass through from the opposite side (protective film side) of the ITO side, it is preferable to use a film of silver or aluminum as the protective film 40 in order to easily penetrate light. Further, in this case, it is also applicable to the protective film 40 as long as it is a resin which does not easily absorb light 'and can (4) penetrate light. 21 201107502 Further, by optimizing the thickness ratio between the metal layer 30 such as lithium and the protective film 4 such as aluminum or silver, the light transmittance can be made with respect to the metal layer 3 and the protective film 40. Or the reflectance of light is optimized. As described above, in the film forming apparatus pM1 of the present embodiment, the material vapor of the organic material discharged from the first discharge mechanisms 120a to 120f is deposited on the substrate G to form the organic layer 20, and then immediately in the same space. The metal layer 3 is formed by depositing alkali metal vaporized atoms ejected from the second discharge mechanism 13A on the substrate G. Thereby, after the organic layer 20 is formed, it is not necessary to transport the substrate G to another processing apparatus, so that the metal layer 3 can be formed in the same processing chamber. Thereby, impurities such as moisture, nitrogen, and oxygen can be prevented from adsorbing on the surface of the organic layer 20, so that the metal layer 30 and the impurities adhering to the surface of the organic layer 20 can be prevented from reacting with each other to be oxidized or insulative to cause deterioration of the film. As a result, an organic EL device having high electron injection efficiency and high performance can be manufactured. Further, since the deterioration of the metal layer 3 can be prevented as described above, a thick metal layer 3 can be formed as compared with the prior art. For example, the metal layer 30 having a thickness of 0.5 nm to 1 〇〇 nm can be formed. By providing the metal layer 30' having a thickness of ◎, the metal layer 30 can have a function not only as an electron injecting layer but also as a cathode of the organic EL element. Further, unevenness in performance of the organic EL element can be suppressed. [1-3] Modification of the first embodiment A modification of the film formation apparatus PM1 of the first embodiment will be described with reference to Fig. 5 . In the film forming apparatus PM1 of the first embodiment, the substrate G is formed to face the film 22 201107502 downward. On the other hand, in the film forming apparatus according to the modification of the first embodiment, the mounting table 110 is provided on the bottom surface of the processing container 1 as shown in Fig. 5 . The mounting table 110 places the substrate G carried in from the gate valve 160a in a state of being placed upward. Further, as long as gas transport can be formed into a film, the film formation substrate can be faced not only face up but also face down or side. The mounting table n is slidable from the first discharge mechanism 120a side toward the second discharge mechanism 130 side on the guide 11A provided on the bottom surface of the processing container. Thereby, the substrate G is attached in the order of the second ejection mechanism 120a, 120b, 120c, 120d, 120e, and 120f to the second ejection mechanism 130, and is moved in parallel below each ejection outlet. As a result, in the same manner as in the first embodiment, the organic layer 20 and the metal layer 30 can be continuously formed inside the same processing vessel 1 . According to this, the film formation process can be performed in a state where the substrate G is placed on the upper side. Thereby, even in the case of a large substrate, the substrate G is not warped and can be easily transported. Further, the in-plane uniformity of the film formed on the substrate can be improved. [2] 苐 2 Embodiment Next, a film formation apparatus according to a second embodiment will be described with reference to Fig. 6 . Further, the substrate processing system Sys of the second embodiment is the same as the third embodiment, and the organic EL element is manufactured in the cluster substrate processing system Sys shown in Fig. 。. 23 201107502 [2-1] Internal structure of film forming apparatus The film forming apparatus PM1 of the present embodiment continuously vapor-deposits the organic layer 20, vapor-deposits the metal layer 30, and the protective film 40 in the inside of the processing container 1A. Processing such as film formation. Therefore, in the film forming apparatus PM1 of the present embodiment, in addition to the film forming apparatus pMi of the first embodiment, a vapor deposition source 2 (first vapor deposition source) and a vapor deposition source provided in the organic layer 20 are deposited. The discharge means 120a to 120f, the vaporizer 300 (second vapor deposition source) and the second discharge mechanism 130 which are provided by vapor-depositing the metal layer 30 are provided in the processing container as described below. There is a sputtering device ❹ 400. * The sputtering apparatus 400 is disposed inside the processing container 100 adjacent to the second ejection mechanism 130. The partition walls 140 and 150 are provided between the first discharge mechanisms 12a and 12f and the second discharge mechanism 130, and similarly between the second discharge mechanism 13A and the sputtering device 4〇〇. A partition wall 410 is provided. The sputtering apparatus 400 is capable of exciting argon gas to generate a plasma, and sputtering a silver sputtering target by argon ions to knock out silver atoms. The silver that has been knocked out is deposited on the substrate to form the protective film 40. Specifically, the sputtering apparatus 400 has sputtering targets 42A and 42B, backing electrodes 43A and 4, sputtering target holders 440a and 440b, and magnetic field generating mechanisms 45A and 45. %, and the gas head 460. & A pair of sputter targets 420a, 42〇b are disposed opposite each other in parallel with the sputter surface. 42〇a and 4 parts of dry ore are used as protective film. 24 201107502 Material=Silver secrets with low resistance and high light reflectivity are good shape, and sputtering targets 420a and 420b are formed by silver. . Only a pair of sputtering targets 420a, 420b are via the backing plate 43, for example, 43〇b, and the _(10) holding table 44()a is smooth. The magnetic field ^ slab, 450b is a magnet in this embodiment, and is placed on the back surface of each bismuth ore 420a, 42Gb, and sputter dry material is provided to form an s-pole magnet. 4 birds are provided with an n-pole magnet. In this way, Yu Qianjian dry material d

In the opposite space, a magnetic field perpendicular to each of the splattered dry materials 420a, 420b is generated so as to surround the space. The argon gas output from the argon supply source 320 is supplied from the air shower head 46 to the processing volume (4). The supply/disconnection of argon gas and the flow rate are adjusted by controlling the (four) flow rate damper MFC and the valve V5 based on the number of the relay that is rotated from the control H 50 . The DC power source 470 applies the sputtering target 42a, 42b as the cathode and the board 430b as the anode, and applies the desired DC according to the driving signal outputted from the controller 50 shown in FIG. Voltage (ο. rated electric power). Thereby, plasma is formed at the opposing spaces of the sputtering targets 420a, 420b. The type of electric power is not limited to the DC rated electric power ‘, and may be AC electric power, rf electric power, nava electric power, pulsed DC electric power, etc., and may be a superimposed electric power. In addition, the DC power source 470 is an example of supplying the desired energy to the energy source inside the processing container 1〇〇. An exhaust device 490 connected to the exhaust port 48A and the exhaust gas 480 is disposed in the vicinity of the sputtering device 400, and by driving the exhaust device 49〇, the atomic atom of the 25 201107502 The internal pressure of the vessel (10) 100 will force each. The handling capacity is such that the organic layer 2 has a large influence on the metal layer. Example: Jiao: The film's environment at the time of film formation will be "film:" two: two layers: eg, the pressure in the processing container is higher and the treatment

In the state of the impurity, the organic layer 2G film reacts with moisture or the like, and dark spots (dark SPGt) or the like are generated in the film to cause photoelectric conversion effect, or the life of the organic EL element is deteriorated. Further, since the metal ^ 30 uses a highly active metal such as a bell, in the state where the pressure in the processing container is relatively high and there are many impurities, the metal layer 3 相互 reacts with oxygen and the like to become an insulator, resulting in electron injection efficiency. Therefore, it is not a good idea to carry out vapor deposition of the organic layer 20 and the metal layer 30 while maintaining the pressure in the processing vessel at a vacuum lower than l〇-2Pa.

In the present embodiment, by maintaining the pressure in the processing chamber at about 1 〇 2 to 10 -3 Pa, it is possible to continuously perform the vapor deposition of the organic layer 20, the treatment key of the metal layer 30, and the protective film in the same container. A film forming apparatus such as a 4-inch button. X According to the film forming apparatus PM1 of the present embodiment, oxidation or nitridation of the organic material and the alkali metal material can be prevented, and the high-quality organic layer 2 and the metal layer 30 can be simultaneously formed. At the same time, the atmosphere is electrically ignited at the splash shovel device 400 provided in the same processing chamber (piasma ignitiQn彡, _ 26 201107502 by argon ions to knock out the sputter atom Ag, thereby, as shown in Fig. 2 (e) The protective film 4 is formed in the same processing chamber as shown in the drawing. Accordingly, after the metal layer 30 is formed, it is not necessary to transport the substrate G to the outside of the processing container 100. As a result, the metal layer 3 can be avoided. The surface adheres to impurities such as moisture, nitrogen, and oxygen, and prevents the metal layer 3〇 from reacting with the impurities in the processing container to oxidize and insulate the film to cause deterioration of the film before the protective film 4 is formed on the metal layer 30. By forming the protective film 40 in the same processing chamber before the metal layer 30 of the highly activated body is oxidized, an organic EL element having high electron injection efficiency and high performance can be manufactured. In this embodiment, it is not necessary. In the first embodiment, a soft etching process (Fig. 2(d)) is performed as a process before sputtering, whereby productivity and productivity can be improved. Further, according to the present embodiment, it is possible to use a lower technique than the prior art. 1〇-2 ～1 Sputtering is performed under a vacuum of about 0 Pa. Therefore, the exhaust efficiency can be improved, and the time required for the transfer and processing of the substrate G can be shortened (compared to the conventional technique). Thereby, productivity and productivity can be improved. Third Embodiment Next, a film forming apparatus according to a third embodiment will be described with reference to Fig. 7. The third processing unit gys of the substrate processing system gys is the same as that of the first embodiment, and the organic EL element is in the figure. Manufactured in the cluster-type substrate processing system Sys. 27 201107502 [3-1] Internal structure of film forming apparatus PM In the film forming apparatus PM1 of the present embodiment, steaming of the organic layer 20 can be continuously performed inside the processing vessel ι In the film forming apparatus PM1 of the present embodiment, in the film forming apparatus PM1 of the second embodiment, the organic layer is used for the vapor deposition of the organic layer in the film forming apparatus PM1 of the second embodiment. a vapor source 2 (a first steam source) and a first discharge mechanism 120a to 120f, and a vaporizer 300 (second vapor deposition source) for vapor-depositing the metal layer 3 and The second discharge mechanism 13 is on the eve of the day! ^ As in the following description, the inside of the processing container is also There is a vaporized crying 500 (corresponding to the third vapor deposition source) and a third nozzle discharging mechanism 51." The outer portion of the processing container (10) is provided with silver or a material for the purpose of heating the bell jar 300. The gasifier/deuterator 500 is connected via a valve V6 whose opening degree can be adjusted: the pump 520. The gasifier 5 is controlled according to the degree of opening of the vacuum output V6 from the output of the controller 50. The vacuum pressure of the second; = is expected. In addition, the gasifier 500 is connected to the output of the nitrogen supply source 32 by adjusting the flow rate of the gas flow and the valve V? The driving signal controls the amount of flow control and the valve V7' to adjust the supply/disconnection of the argon gas, and the third discharge device 51 is connected to the third gas by the third gas; The third gas supply pipe 530 is provided with _v°, and the supply/suction and flow rate of the protective material conveyed toward the processing capacity H side. 28 201107502 Thereby, aluminum or silver evaporated in the vaporizer 500 is transported through a passage inside the third gas supply pipe 520 by using a specific amount of argon gas supplied to the inside of the vaporizer 500 as a carrier gas. To the inside of the processing container. A partition wall 540 is provided between the second discharge mechanism 130 and the third discharge mechanism 510. Further, an exhaust port 550 is provided on the side of the third discharge mechanism 51 of the processing container 1A. Exhaust port 550 is coupled to exhaust 569. When the exhaust unit 560 is driven, the residual atoms of the silver ejected from the third discharge unit 51 can be discharged from the exhaust port 550 to the outside of the processing container. Further, in order to form the protective film 4, a vapor deposition source having the same structure for forming the crucible used for the organic layer 20 may be used instead of the vaporizer 500. However, since the material gas for the protective film is a metal material, care must be taken not to use it as an alloy. According to the continuous film forming apparatus described above, when the substrate G sequentially passes under the first exhalation mechanisms 120a to 120f, the organic material vapors A to F discharged from the second ejection mechanisms 120a to 120f can be stacked to each other. The substrate G is sequentially formed with an organic layer (i-th layer to sixth layer). Next, the metal layer 3G is formed by depositing lithium discharged from the second discharge mechanism 130 onto the substrate G. Finally, the protective film 4 is formed by depositing silver ejected from the third ejecting mechanism 51 () onto the substrate G. Accordingly, oxidation or nitridation of the organic material and the alkali metal material can be prevented, and at the same time, a high-quality organic layer 2 and a metal layer 3 can be formed. Further, in the case of the Bebe, the film formation is placed on the PMi, and the protective film 40 can be formed on the metal layer 30 immediately by the silver ejected from the third discharge mechanism 51 provided in the same processing chamber. 29 201107502 Accordingly, after the metal layer 3 is formed into a film, it is not necessary to externally the base processing container 100. As a result, the metal layer can be prevented from reaching impurities such as moisture, nitrogen, oxygen, etc., and before the protective film 40 is formed on the surface suction layer 30, the metal layer 30 can be prevented from reacting with the metal in the treatment, the container, and the metal. Insulation is used to cause deterioration of defects. The impurity is formed by the formation of the protective film 4 in the metal layer 3 of the highly activated body. Thus, the organic EL element having high performance in the electron = input = the same can be produced. The eve rate is high, and it is not necessary to perform a soft etching process as a sputtering in the first embodiment (Fig. 2(d)). In this way, it is possible to improve the handling of the door and the productivity. [3-2] Modification of the third embodiment In the above embodiments, the substrate G is placed on the mounting a, and the mounting table 11G is slidably moved to form the respective layers on the substrate G. On the other hand, in the modification of the third embodiment, as shown in Fig. 8, the drums _, (4) are provided at both ends of the processing container, and the windings of the rollers 61 〇, 62 () at the ends of the four ends are attached. The film Fhn of the rollers 610 and 620 at both ends is replaced by the second discharge mechanism 130' toward the third nozzle mechanism 510 from the second discharge mechanism i2a to i2〇f side instead of the substrate G. The method of placing on the mounting table 11〇. The organic materials Α to ρ, lithium, and silver which are ejected from the first discharge mechanisms 120a to 120f, the second discharge mechanism 13A, and the second discharge mechanism 51 are sequentially vapor-deposited on the film Flm. Thereby, the organic layer 2, the metal layer 3, and the 201107502 protective film 40 can be continuously formed on the film Flm in the same space in the processing container. Thereby, deterioration of the organic layer 20 and the metal layer 30 which are relatively sensitive to the environmental gas at the time of film formation can be prevented from being formed in the film formation. In this way, an organic EL element having a high photoelectric conversion efficiency and an electron injection efficiency can be produced on the film Flm while maintaining a high lifetime and a long life, and the manufacturing cost can be reduced by using the film Flm as a processed object instead of the substrate G. . Further, as the film Flm, PET (polyethylene terephthalate) or PPE (polyphenylene Ether) can be used. Fourth embodiment, the fourth embodiment will be described with reference to FIG. The internal structure of the film forming apparatus of the form. The film forming apparatus pM1 of the present embodiment is subjected to vapor deposition after the organic layer 2, and then two different sputtering electrodes are continuously used in the same processing container 1 to perform two different ruthenium plating processes. Specifically explain the processing method. First, when the organic layer 20 is vapor-deposited, the vapor of the organic material vaporized at the vapor source 200 will be from the first! Each of the discharge mechanisms G 12Ga to 12〇f is directed toward the substrate nozzle, whereby six layers of the organic layer 2 are continuously formed. The processing container 100 is provided with a ruthenium plating apparatus 40 for forming the metal layer 30, and a side of the sputtering apparatus 4〇1, and a miscellaneous apparatus 402 for the lining film 4 is placed beside the first nozzle opening mechanism 120f. . The main internal structure of the ruthenium plating apparatus 401 and the metal concentrating apparatus 402 is the same as that of the lining apparatus _ described in the second embodiment, and thus the description thereof is omitted. Further, the sputtering apparatus 401 corresponds to the first sputtering apparatus, and the sputtering apparatus 402 has the phase 31 201107502 as the second sputtering apparatus. After the organic layer 20 is formed, the substrate is moved below the sputtering apparatus 4〇, where the metal layer 3' with a higher success function is formed. The sputtering apparatus 401 is, for example, sputtered a sputtering target composed of magnesium Mg, and laminates the knocked magnesium Mg on the substrate to form a metal layer 3〇. After the metal layer 30 is formed, the substrate is moved to the lower side of the sputtering apparatus 4 to form a protective film 4 having a cathode function. The sputtering apparatus 4 is for example sputtering a sputtering target composed of silver Ag. The silver Ag atoms which are knocked out are laminated on the substrate to form a protective film. Protective film IS IS A1 can also be used. In addition, the secret metal dripper (4) can be used instead of the sputtering apparatus 4〇1, 4〇2. Further, a sealing film (not shown) composed of osmium oxide film Si〇2 or nitriding film SiN or the like is formed on the protective film 40, whereby an organic EL device can be produced. In the evaporation of organic materials, the organic material vapor will diffuse while the substrate # atom can be in a relatively straight path to ❹. Compared with the ship atom, the organic material vapor is easier to use. Therefore, at least one or more of the rows of the organic film forming side are arranged to prevent the organic material vapor from flying to the sputtering apparatus, and the film formation adversely affects the film formation. In the present embodiment, the yk shelling mechanism 12 〇 f side is provided with an exhaust device 195b, mainly:: the first light: the organic material vapor ejected by the outlet mechanisms 120a to 120fm + Sander: preventing the organic material vapor from flying to The sputtering device is placed at 401. The partition wall 41〇 between the first growing mechanism 120f and the sputtering device 4〇1 is the same 32 201107502 to prevent the organic material vapor from flying to the sputtering device 4〇1. Of course, these structures also prevent the sputtered atoms from flying to the organic film forming side. According to the actual state, it is also possible to form an organic layer 2, a metal layer and a protective layer 40 while preventing oxidation or nitridation of the organic material and the metal material. In the present embodiment, the bismuth plating of the organic layer 20, the formation of the metal layer 3 and the protective film 4A can be continuously performed in the same processing container, so that productivity can be improved and cost reduction at the time of production can be achieved. In particular, by providing the sputtering devices 401 and 402 side by side in the lateral direction, different film forming conditions and different device structures can be used to continuously perform brique film formation of different materials, and have the same processing container. Functional separation and time reduction. Further, in the present embodiment, although two sputtering apparatuses are arranged, three or more ruthenium plating apparatuses may be arranged. As described above, according to the respective embodiments, the alkali metal which is easily activated can be stably produced without being oxidized or the like.各 The actions in the above-mentioned implementations are related to each other, and they can be considered to be related to each other, and the replacement-series actions. Then, the embodiment of the film forming apparatus for manufacturing the organic EL element can be used as an embodiment of a film forming method for producing the organic EL element, and the use of the above-described enthalpy device can be used. An embodiment of an organic EL element. The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is of course not limited to the examples. Those skilled in the art can cite the patents described in the scope of the patent application, which are, of course, also belong to various variations or modifications. For example, the present invention is a metal gas::. ,, if the melting point is low, it can also be used as a liquid side, but it is replaced by the gasification and crying, and supply. By this, the liquid state is continuously supplied for inspection? There is a feature of using a dedicated container to face the continuous film of the material in the gasifier described above. In addition, in order to allow the gasifier to continuously supply materials, then. Therefore, each gasifier is switched to use or the like. Two laborers are preparing for multiple gas

Further, the alkali metal material compound used in the present invention. However, it is also possible to mix the materials into the film by using the material. In addition to the slave metal vapor, the processing container (10) and the steam source 200 of the present invention are separately provided, but a steam source of each organic material may be contained in a processing container.

Further, the object to be processed may be a substrate of 730 mm x 920 mm or more, or may be a silicon wafer of 200 mm or more. Further, the organic layer and the work function vapor deposition layer (metal layer) can be formed in a state in which the material vapors are mixed with each other. For example, the residual organic material vapor from the first discharge mechanism 120a side is caused to fly to the second discharge mechanism 130 side to be mixed into the metal layer 30. Further, lithium is caused to fly to the side of the second discharge means 120a to 120f to be mixed into the organic layer 2''. [Brief Description of the Drawings] Fig. 1 is a schematic configuration diagram of a substrate processing system according to the first to fourth embodiments and their modifications. Fig. 2 is a view showing an example of a process of an organic EL device according to an embodiment of the present invention. Fig. 3 is a longitudinal sectional view showing a film forming apparatus PM1 of the first embodiment. Fig. 4 is a view showing an organic EL device formed by the six-layer continuous film formation process of the first to fourth embodiments. Fig. 5 is a longitudinal sectional view showing a film forming apparatus PM1 according to a modification of the first embodiment. Fig. 6 is a longitudinal sectional view showing a film forming apparatus PM1 of the second embodiment. Fig. 7 is a longitudinal sectional view showing a film forming apparatus PM1 according to a third embodiment. Fig. 8 is a longitudinal sectional view showing a film forming apparatus PM1 according to a modification of the third embodiment. Fig. 9 is a longitudinal sectional view showing a film forming apparatus PM1 of the fourth embodiment.

[Main component symbol description] 10 ITO 20 organic layer 30 metal layer 40 protective film 50 controller 50a ROM 50b RAM 50c CPU 50d output 1/F 100 processing container 110 mounting table 110a rail 130 second ejection mechanism 140, 150 points Partition wall 35 201107502 160a, 160b Gate valves 180 120a, 120b, 120c, 120d, 120e, 120f 170a, 170b, 170c, 170d, 170e, 170f 210a, 210b, 210c, 210d, 210e, 210f Gas supply pipe first nozzle mechanism 1 gas supply pipe 坩埚 220a, 220b, 220c, 220d, 220e, 220f heater 195a, 195b exhaust 190a, 190b exhaust port 200 steam source 240 exhaust device 310 vacuum pump 400, 401, 402 sputtering device 420a 420b贱plated dry material 440a, 440b sputter dry holding station 460 air head 480 exhaust port 500 gasifier 520 vacuum pump 540 partition wall 560 exhaust CM cleaning device Ds2 power LLM load interlock device PM2 etching device PM4 splash Plating device Sys substrate processing system 230 exhaust port 300 gasifier 320 argon gas supply source 410 partition wall 430a, 430b back plate 450a, 450b magnetic field generating mechanism 470 Discharge means 510 of the third exhaust means 530 of the source 490 gas supply pipe 3 550 610 an exhaust port, the drum 620 Dsl evaporation vessel G substrate PM1 PM3 CVD film-forming apparatus folds the buffer space S facing the transport means TM

36 201107502 V Bu V2, V3, V4, V5, V6, V7, V8, V10, V15 valves A, B, C, D, E, F organic materials

37

Claims (1)

201107502 VII. Patent application scope: 1. A film forming apparatus comprising: a processing container in which a desired treatment is applied to the object to be processed; and a first vapor deposition source for storing the organic material and storing the material The organic material is heated to be vaporized; the first discharge mechanism is built in the processing container and connected to the first vapor deposition source, and the organic material vaporized at the first vapor deposition source faces the processing container The second vapor source is stored in the metal material, and the stored metal material is heated to be vaporized; and the second discharge mechanism is housed in the processing container and connected to the first (2) The vapor deposition source ejects the alkali metal material vaporized at the second vapor deposition source toward the object to be processed in the processing container. 2. The film forming apparatus of the first aspect of the invention, further comprising: a third vapor deposition source for storing a protective film material, heating the material for the protective film to be vaporized, and discharging the third discharge The mechanism is built in the processing container and connected to the third vapor deposition source, and the material for the protective film vaporized at the third vapor deposition source is discharged toward the object to be processed in the processing container. 3. The film forming apparatus of claim 1 is further provided with a sputtering apparatus which is housed in the processing container and splashes the ore deposit composed of the material for the protective film. 4. The film forming apparatus of claim 1 which is provided with a mounting surface 38 201107502 5. Ο 6. A truss, which is a workpiece to be transported to the processing container; the mounting table can be turned upward or The ruptured body placed downward or in the longitudinal direction is slid from the third slanting mechanism toward the second ejector. The invention provides the money device of claim 1, wherein a drum is provided at both ends of the processing container; and by rolling the rollers at the both ends, the cymbal of the roller attached to the both ends is ejected from the cymbal Moving toward the second discharge mechanism side = row. The film forming apparatus of claim 1, wherein the processing container is provided with an exhaust crack at least on the side of the first discharge mechanism. The film forming apparatus of claim 1, wherein a separation is provided between the third discharge mechanism and the second discharge mechanism. For example, the film forming apparatus of claim 1 is the same as the third. The ruthenium plating source is formed by a plurality of enthalpy materials containing a plurality of organic materials; y the first discharge mechanism is formed by a plurality of squirting portions connected to a plurality of sputum; a plurality of species that will be vaporized in the plurality of sputum spaces The organic film is formed by laminating a plurality of adjacent layers of the organic layer from the first discharge mechanism. 'Coffin 枓 进行 进行 尹 尹 尹 尹 尹 尹 专利 专利 专利 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹 尹The processing container is configured to perform a desired treatment on the object to be processed; the first vapor deposition source stores the organic material, and heats the stored organic material to vaporize, and the first discharge mechanism And being stored in the processing container and connected to the first vapor deposition source, and the organic material vaporized at the first vapor deposition source is discharged toward the object to be processed in the processing container; the first sputtering device is The sputtering container is embedded in the processing container, and the sputtering target composed of an alkali metal material is sputtered; and the second sputtering device is embedded in the processing container, and the thickness of the protective film is reduced: mine. 11. The film forming apparatus of claim 10, wherein the processing container is provided with an exhausting device at least on the side of the first ejection mechanism. 12. The film forming apparatus of claim 10, wherein a partition wall is provided between the first discharge mechanism and the second discharge mechanism. 40