201028034 六、發明說明： 【發明所屬之技術領域】 本發明係關於有機電激發光（Electro Luminescence 以下，亦簡稱爲EL)裝置製造裝置及其製造方法以及成 膜裝置及成膜方法’特別是關於適於藉由蒸鍍法製造的有 機電激發光裝置製造裝置及其製造方法。 • 【先前技術】 作爲製造有機電激發光裝置之有力方法有真空蒸鑛法 。伴隨著顯示裝置的大型化，對於有機電激發光裝置也被 要求其大型化，基板尺寸甚至達到15〇〇mmxl850min。 在一般的真空蒸鍍法，爲了持續安定的蒸鍍，必須要 控制使來自蒸發源的材料蒸發速度保持一定。使用電阻加 熱或誘導加熱等方法加熱蒸鏟材料進行物理蒸鍍（PVC) 的場合’蒸發速度的安定必須要花一定時間才能達成。因 Φ 此來自蒸發源的材料蒸發並無法容易實現恰如打開關閉一 個開關那樣地進行控制。 作爲這樣藉由真空蒸鍍法之有機電激發光裝置的製造 之先行技術例如有下列專利文獻1與2。從前，如下列專 利文獻那樣係在真空蒸鍍室內放入1枚1枚處理對象之基 板而進行處理。此外’在專利文獻1爲了縮短處理時間， • 採用把基板搬入真空蒸鍍室之前進行對準（位置對準）之 ' 方法’而在專利文獻2採用使基板垂直而蒸鍍的方法。 此外’伴隨著基板的大型化，對於可以藉由簡單的機 -5- 201028034 構來進行高精度蒸鍍的基板搬送之要求也變得更高。作爲 一般的真空蒸鍍法之基板搬送方法，爲了由下方蒸鍍有使 蒸鍍面朝下而搬送之下面搬送法。在下面搬送法，下面爲 蒸銨面，但有必要保持無法保持爲蒸鍍面，無法作爲顯示 面使用的框部份而進行搬送。此外，伴隨著基板的大型化 ，將基板插入托盤而垂直搬送之垂直搬送法也被提出。關 於基板搬送之先行技術，例如有下列之專利文獻1、3。 [先行技術文獻] [專利文獻] [專利文獻1]曰本專利特開20〇4 — 25963 8號公報 [專利文獻2]日本專利特開2〇〇7 — 1 773 1 9號公報 [專利文獻3]日本專利特開2006 - 1 47488號公報 【發明內容】 [發明所欲解決之課題] 然而，如前所述爲了使材料蒸發速度保持一定必須要 使其維持蒸發。亦即，前述步驟之中不需要蒸鍍的基板搬 出搬入、定位步驟等階段也必須要使其蒸發，其間由蒸發 源蒸發的材料對於蒸鍍步驟沒有貢獻，直接成爲材料損失 。在前述專利文獻1，雖然縮短對準時間，以謀求生產性 的提高，也因此減低了材料損失，但是基板的搬出搬入很 耗時間，並不是根本的解決對策。 特別是有機電激發光材料很昂貴所以製品價格很高， 對於有機電激發光裝置的普及造成很大的影響。此外，損 失材料變多所以材料的交換頻率也變高，因而有裝置的工 -6 201028034 作時間減低之課題。 此外，蒸鍍步驟與其他步驟之處理時間幾乎相等，而 有生產性不佳的課題。 另一方面在下面搬送法，因爲是僅保持框部份之搬送 ，所以伴隨著基板大型化之撓曲也變大。撓曲變大的話僅 有框部份之保持力，所以必須要有特別的保持機構。此外 ，保持力不足的話，落下的危險性也很高。進而，撓曲的 Φ 問題不僅影響搬送，在下面蒸鍍時也會影響到遮蔽遮罩的 撓曲，兩者影響的結果會造成無法進行高精度蒸鍍之課題 。此外，垂直搬送雖然可以解消撓曲的問題，但是必須要 有搬送用托盤，該托盤亦爲大型物，會有托盤導致搬送時 放出粉塵或必須要有托盤的回收/洗淨機構等課題。 因而，本發明之第一目的，在於提供材料的損失很少 、經濟性佳之有機電激發光裝置製造裝置或其製造方法或 成膜裝置或成膜方法。 ® 此外，本發明之第二目的，在於提供生產性高之有機 電激發光裝置製造裝置或其製造方法或成膜裝置或成膜方 法。 進而，本發明之第三目的，在於提供運轉率高之有機 電激發光裝置製造裝置或其製造方法或成膜裝置或成膜方 法。 此外’本發明之第四目的’在於提供機構簡單可以上 . 面搬送之有機電激發光裝置製造裝置或其製造方法或成膜 裝置或成膜方法。 201028034 此外，本發明之第五目的，在於提供於上面搬送也可 以高精度地蒸鍍之有機電激發光裝置製造裝置或其製造方 法或成膜裝置或成膜方法。 [供解決課題之手段] 爲了達成前述目的，以於前述真空室內收容N(N爲 2以上）枚基板，而在使第1枚之第1基板以前述蒸發源 蒸鍍時，把第N枚之第N基板搬入前述真空室內，以前 0 述蒸發源蒸鍍第2枚之第2基板時把前述第1基板由前述 真空室內搬出爲第1特徵。 此外，爲了達成前述目的，以在蒸鍍第1之前述基板 時，結束第2之前述基板之前述位置對準，以與前述蒸鍍 時相同的蒸發源蒸鍍前述第2之基板時把前述第1基板由 前述真空室內搬出爲第2特徵。 進而，爲了達成前述目的，以將基板由搬入加載互鎖 (load-lock)室搬入，透過至少1台真空室，往搬出加載互 ❿ 鎖室搬送，而於前述真空室將蒸鍍材料蒸鍍於前述基板時 ，使前述基板之蒸鍍面爲上面而搬送，至少在使前述基板 移動的場合保持前述基板之搬送面不滑動爲第3特徵。 此外，爲了達成前述目的，除了第1及第2特徵以外 ，還有使前述蒸發源移動至分別對個別基板而設的蒸鍍位 置爲第4特徵。 進而，爲了達成前述目的，除了第1及第2特徵以外 . ，還有使前述位置對準所必要的遮蔽遮罩與前述基板成爲 "8 - 201028034 一體而移動至前述蒸發源位置爲第5特徵。 此外’爲了達成前述目的，除了第1及第2特徵以外 ’還有使前述基板移動到前述蒸鍍的位置，之後實施前述 位置對準爲第6特徵。 進而’爲了達成前述目的，除了第1至第3特徵以外 ’還有使前述基板在垂直立起的狀態實施前述蒸鍍，使以 水平狀態搬送的前述基板成爲垂直爲第7特徵。 [發明之效果] 根據本發明，可以提供材料的損失很少、經濟性佳之 有機電激發光裝置製造裝置或其製造方法或成膜裝置或成 膜方法。 此外’根據本發明，可以提供生產性高之有機電激發 光裝置製造裝置或其製造方法或成膜裝置或成膜方法。 進而’根據本發明，可以提供運轉率高之有機電激發 光裝置製造裝置或其製造方法或成膜裝置或成膜方法。 此外’根據本發明，可以提供構造簡單且可以進行上 面搬送之有機電激發光裝置製造裝置或其製造方法或成膜 裝置或成膜方法。 進而，根據本發明，可以提供於上面搬送亦可高精度 蒸鍍之有機電激發光裝置製造裝置或其製造方法或成膜裝 置或成膜方法。 【實施方式】 201028034 用圖1〜圖5，說明本發明之第1實施型態。有機EL 裝置製造裝置，並不僅是形成發光材料層（EL層）而以 電極夾住之構造，還包括在陽極之上形成正孔注入層或輸 送層、在陰極上形成電子注入層或輸送層等種種材料形成 薄膜而構成多層構造，或是洗淨基板等步驟。圖1顯示該 製造裝置之一例。 本實施型態之有機EL裝置製造裝置100，大致係由 搬入處理對象之基板6之裝載群組（cluster)3、處理基板6 φ 之4個群組（A〜D)、在各群組間或群組與裝載群組3 或次一步驟（密封步驟）之間設置的5個收授室4所構成 。次一步驟之後方爲了搬出基板之用至少設置如後述之加 載互鎖（load-lock)室那樣的卸載互鎖（unl〇ad-lock)室（未 圖示）。 裝載群組3，係由於前後具有維持真空之用的閘閥1〇 之加載互鎖（load-lock)室31、由加載互鎖室31接取基板6 (以下簡稱基板），旋轉而把基板6插入收授室4a之搬 © 送機械臂5a所構成。各加載互鎖室31以及各收授室4於 前後具有閘閥10，控制該閘閥10之開閉維持真空同時往 裝載群組3或次一群組等收授基板。 各群組（A〜D)，具有具一台搬送機械臂5之搬送 室2、由搬送機械臂5收取基板，進行特定處理之在圖面 上配置於上下的2個處理室1 (第1個下標a〜d代表群組 ’第2個下標u，d代表上側下側）。搬送室2與處理室1 . 之間設有聞閥1 0。 -10- 201028034 圖2係顯示搬送室2與處理室1的構成之槪要。處理 室1的構成隨處理內容而不同，此處以在真空下蒸鍍發光 材料形成EL層之真空蒸鍍室lbu爲例進行說明。圖3係 顯示搬送室2b與真空蒸鍍室lbu的構成之模式圖與動作 說明圖。圖2之搬送機械臂5，具有可以使全體可以上下 移動（參照圖3之箭頭53)，左右旋轉的連結（link)構造 之臂51，其前端分上下兩段具有基板搬送用之2個梳齒狀 手部52。藉由使成爲上下兩段，可使上段爲搬入用，下段 爲搬出用，以1個動作同時進行搬出入處理。使其具有2 個手部或1個手部是隨著處理內容而決定的。在以後之說 明，爲了簡化說明係以具有1個手部來進行說明。 另一方面，真空蒸鍍室lbu，大至係由使發光材料蒸 發而蒸鍍於基板6之蒸鍍部7、及使蒸鍍於基板6之必要 部分之對準部8、及進行搬送機械臂5與基板之授受，使 基板6往蒸鍍部7移動之處理收授部9所構成。對準部8 與處理收授部9設有右側R線與左側L線2個系統。處理 收授部9,具有具可以與搬送機械臂6之梳齒狀手部52不 相互干涉地收授基板6，而固定基板6的手段94之梳齒狀 手部91，與使前述梳齒狀手部91旋轉而使基板6直立而 移動使其面對對準部8或蒸鍍部7之基板面控制手段92。 作爲固定基板6之手段94，考慮在真空中下操作而使用電 磁吸附或迴紋夾（clip)等手段。 對準部8，具有藉由圖4所示之由遮罩81m、框架 81f所構成的遮蔽遮罩81與基板6上之對準標記84而使 -11 - 201028034 基板6與遮蔽遮罩81對準位置之對準驅動部83。蒸鑛部 7，具有使蒸發源71沿著軌道76上移動於上下方向之上 下驅動手段72，及使蒸發源71沿著軌道75上移動於左右 之對準部間之左右驅動基座74。蒸發源71，成爲內部具 有蒸鍍材料之發光材料，藉由加熱控制（未圖示）前述蒸 鍍材料而得到安定的蒸發速度，如圖3之引伸圖所示，由 線狀排列之複數噴射噴嘴73來噴射的構造。隨著需要， 以可得到安定蒸鍍的方式同時加熱添加劑而進行蒸鎪。 馨 以上，在說明的實施型態中，構成搬送機構的，是裝 載群組3之加載互鎖（load-lock)室31、搬送機械臂5a、收 授室4、搬送室2之搬送機械臂5以及處理室1之處理收 授部9。這些可以大致區分爲具有梳齒狀手部的搬送機械 臂5,5a，以及該手部插入的加載互鎖（load-lock)室31、收 授室4以及處理收授室9。透過這兩組進行交互作用而同 時搬送基板6。 圖5係作爲其一例，顯示對收授室4之基板保持部41 φ 插入搬送機械臂5之梳齒狀手部52，收取基板6的狀況與 構成。基板6之上面係成爲顯示面的被蒸鑛面，其下面爲 非顯示面。亦即，在從前之下面搬送僅在可接觸的框部保 持著，在上面搬送則包含中央部都可以作爲接觸區域利用 所以可達成撓曲很少的安定的搬送。在圖5顯示具有梳齒 狀手部52之2個機械臂，在收授室具有3根軌道狀之基 板保持部41。於梳齒狀手部52之與基板6接觸的上面 . 5 2u，被設有作爲在手部旋轉時以基板不滑動的方式進行 -12- 201028034 保持之保持手段之黏接性橡膠20。面狀地貼附橡膠亦可但 是黏接力太強的話必須要考慮到脫離性會變差。除了黏接 性橡膠以外，考慮到真空環境亦可以適用電磁吸附等。 其次，重點說明如何使高精度蒸鍍成爲可能。圖6係 顯示由圖1至圖3所示之處理室1之處理流程。本實施型 態之處理的基本想法有二。 首先，在一方生產線蒸鍍時，另一方之生產線則進行 ❹ 基板搬出搬入、位置對準、結束蒸鍍之準備。如發明所欲 解決之課題那裡所說明的，蒸鍍的步驟，與對處理室1之 基板搬出搬入作業等其他步驟所需要的時間幾乎相同，在 本實施型態雙方分別爲約略1分鐘。藉由交互進行此處理 ，可以減少浪費蒸鍍的時間。 第二點，係使上面搬送的基板垂直立起，搬送至對準 部8，而進行蒸鍍。搬送時基板6的下面若爲蒸鍍面則有 必要反轉，但因上面爲蒸鍍面所以只要垂直立起即可。 胃 使用圖7說明使基板垂直立起而蒸鍍的理由。如圖4 所示對應於大型基板之遮蔽遮罩 81的大小，爲 1800mmx2000mm程度，而且遮罩81m的厚度爲40μηι，今 後還有更爲薄化的傾向。在此，由下面蒸鍍的話基板的重 量約5kg，遮罩81m的重量爲2 0 0kg，所以對於遮罩81m 因受到二者重量影響而有大幅的撓曲。在撓曲的基板以撓 曲的遮罩81m進行蒸鍍，所以會蒸鍍到相鄰之色區域，產 生色混濁的狀態使彩度掉落。在此，使基板6與遮蔽遮罩 81 —起成爲立起狀態解消撓曲，以得到高精度高彩度之色 -13- 201028034 其次，參照圖3同時使用圖6，說明本實施型態之處 理流程。於圖3，基板6存在之處以實線表示。 首先，於R線（生產線）搬入基板6R，使基板6R垂 直立起移動至對準部8R，進行位置對準（由步驟R1至步 驟R3 )。此時，垂直立起之後立刻進行位置對準，所以 使蒸鍍面在上而搬送基板6。位置對準，係如圖3之延伸 圖所示，以CCD攝影機86攝影，使設於基板6的對準標 H 記84進入設在遮罩8 1m的窗85中心的方式，使遮蔽遮罩 81R以前述對準驅動部83控制而進行的。本蒸鍍若爲發 出紅（R)光的材料，如圖4所示在對應餘遮罩81m之R 的部分開有窗部，而在該部分被蒸鍍。該窗部的大小隨顏 色而不同，平均爲寬幅50μπι、高度150μηι程度。遮罩 81m的厚度爲40 μιη，今後還有更薄化的傾向。 位置對準結束之後，使蒸發源71移動至R線側（步 驟R4)，其後使線狀之蒸發源71移動往上或下而進行蒸 ® 鍍（步驟R5)。於R線蒸鍍中，在L線與R線同樣地進 行步驟L1至步驟L3之處理。亦即，搬入其他基板6L， 使基板6L垂直立起移動至對準部8L，進行與遮蔽遮罩 81L之位置對準。結束R線的基板6R之蒸鍍之後，蒸發 源71移動至L線（步驟L4)，蒸鍍在L線之基板6L( 步驟L5)。此時蒸發源71由R線之蒸鍍區域完全離開之 前，基板6R由對準部8R離開的話，會有進行不必要的蒸 鍍的可能，所以在完全離開之後，開始基板6 R之由處理 -14- 201028034 室1搬出的動作，其後進入新的基板6R的準備。爲了避 免前述不必要的蒸鍍而在生產線之間設有隔板11。又，圖 3顯示步驟R5以及步驟L1之狀態。亦即在R線開始蒸鍍 ’在L線把基板搬入真空蒸鍍室lbu的狀態。 其後，藉由連續進行前述流程，根據本實施型態，可 以在除了蒸發部7的移動時間以外，進行不浪費使用蒸鍍 材料之蒸鍍。如前所述必要的蒸鍍時間與其他處理時間約 ® 爲1分鐘，蒸發源71的移動時間爲5秒鐘的話，從前長 達1分鐘的無謂浪費的蒸鍍時間在本實施型態可以縮短爲 5秒鐘。 此外，根據本實施型態，如圖6所示真空蒸鍍室lbu 之處理1枚基板的處理週期在實質上成爲蒸鍍時間+蒸發 源7 1的移動時間，所以可提高生產性。評估在前述條件 下的處理時間的話’相對於從前的2分鐘，在本實施型態 可以縮短爲1分5秒’把生產性提高至約略2倍。 胃進而’對相同量的蒸鍍材料而言蒸鏟部7消耗的時間 ’雖與從前例沒有不同，但是生產量變成2倍，因而減低 附著於真空室壁的材料附著量，因此對於室壁等的附著之 維修循環時間以及所要時間也可以縮短。結果，根據本實 施型態可以提高裝置的運轉率。 在前述實施型態’在一個處理裝置之中對一個蒸鍍部 . 7設有對準部8、處理收授部9所構成之2系統之處理線 。例如’蒸鑛時間爲30秒，其他處理時間爲1分鐘的話 ’在一個處理裝置之中對一個蒸鏟部7設有3個處理線也 -15- 201028034 可以同樣得到很大的效果。 此外，根據本實施型態，於具有蒸鍍裝置之裝置能夠 以簡單的構造達成上面搬送。 進而，根據本實施型態，進行上面搬送使基板立起而 蒸鍍，所以可對基板高精度且高彩度地蒸鍍。 其次，使用圖8說明第2、第3實施型態。在第1實 施型態，蒸發源71移動而進行處理，在本實施型態，圖 8(a)顯示對準部8移動之例，圖8(b)顯示處理收授部9移 動之例。基本的動作與實施型態1相同。 首先，說明圖8(a)之由處理收授部9收取而保持基板 6的對準部8進行移動而處理之例。又，於圖6，基板6、 對準部8以及處理收授部9存在之處以實線表示。 首先，於R線（生產線）搬入基板6R，使基板6R垂 直立起使基板6R移動至對準部8R，進行位置對準。其後 ，對準部8R、8L藉由對準基座8B成爲一體在到達蒸鍍 部之前往左方移動。又，對準部8R、8L亦可爲個別左右 移動之構造。作爲該移動機構（未圖示），亦可使用與實 施型態1同樣設有軌道，而使移動於其上之方法。其次進 行基板6R之蒸鍍。基板6R蒸鍍時，對準部8L來到處理 收授部9L之前，所以可收授其他基板6L，進行位置對準 等之處理。基板6R之蒸鍍處理結束之後，對準部8R、8L 成爲一體而在到達蒸鍍部7之前往右移動，進行基板6L 之蒸鍍處理。這次，對準部8R來到處理收授部9R之前， 可以收授其他基板6R進行下一蒸鍍的準備。又，圖8(a) 201028034 顯示在蒸鍍基板6L時，基板6R在對準部8R被收取之情 形。 根據本實施型態，對於蒸鑛材料使用量的降低，生產 性的提高等效果，可以得到與實施型態1同樣大的效果。 其次，說明圖8(b)之處理收授部9移動而進行處理之 例。在此場合，對準部8與蒸鍍部7是固定的。處理收授 部9R、9L成爲一體而往左右移動。又，處理收授部9R' • 9L亦可爲個別左右移動之構造。在本例，係處理收授部9 移動，使基板垂直立起，進行位置對準，而進行蒸鍍。進 行蒸鍍時，可以進行另一方基板的搬入與新的基板的搬入 。又，圖6(b)顯示在蒸鍍基板6L時，基板6R被搬入處理 收授部9R之情形。 亦即，本實施型態，與前2個實施型態相比效果較小 ，但與從前例相比同樣還是多少可以得到一些效果。 此外，根據第2、第3實施型態的話，能夠以簡單的 ® 構造進行上面搬送，可以使上面搬送之基板幾乎垂直立起 而高精度高彩度地進行蒸鍍。 此外，於以上之實施型態之說明，蒸鍍部7、對準部 8以及處理收授部9係設於同一真空室，但中介著閘閥而 進行真空室之間的移動，亦可以把蒸鍍部7設於處理室， 把對準部8及處理收授部9設於搬送室等。 . 以上之實施型態係針對使基板6之蒸鍍面在上而搬送 的場合來進行說明。作爲此點之其他的基板之搬送方法， 亦有使蒸鍍面在下而搬送的方法、把基板放入箱內立起搬 -17- 201028034 送的方法。以下所述之實施例，雖無法發揮上面搬送之效 果，但可以發揮減少無謂浪費進行蒸鑛的時間之效果。 使蒸鍍面在下的場合，有必要由下方進行蒸鍍處理， 所以於前述實施型態之蒸鑛時，只要是維持了基板6、對 準部8以及蒸鍍部7之位置關係的配置構造即可，作爲處 理流程省略使基板垂直立起之處理即可。例如圖9係使蒸 鍍面在下的場合之對應於圖3的案例之實施型態，構造上 是在處理收授部9R、9L之下配置對準部8R、8L，於該對 ® 準部8R、8L之下設有蒸鍍部7，蒸發源71可以移動於兩 對準部間之構造。 其次，於立起搬送的場合，只要省掉使基板垂直立起 的處理就可以適用前述實施型態。 以上，如說明的內容，對於蒸發源之有效利用之下降 ，無論搬送方法之內容如何均可以適用本發明。 另一方面，相關於上面搬送之本發明於以上之實施型 態之說明，係使搬送系統構成於真空內，但亦可如專利文 ® 獻3所示那樣揭示了在真空處理室之前在真空外設有滑移 裝置，在處理室之前使機械臂伸縮而搬進搬出基板。於這 樣的裝置，由前述滑移裝置、伸縮機械臂、往處理室之搬 出搬入裝載部以及處理室內之處理收授部所構成的搬送系 亦可以適用本發明。 最後，在前述說明以有機EL裝置爲例來進行說明， 但對於進行與有機EL裝置有相同背景的蒸鍍處理之成膜 . 裝置及成膜方法亦可以適用。 -18- 201028034 【圖式簡單說明】 圖1係顯示本發明的實施型態之有機電激發光裝置之 製造裝置之圖。 圖2係顯示本發明之實施型態之搬送室2與處理室！ 的構成之槪要。 圖3係顯示本發明之實施型態之搬送室與處理室的構 Φ 成之模式圖與動作說明圖。 圖4係顯示遮蔽遮造（shadow mask)之圖。 圖5係顯示本發明的實施型態之搬送機構之圖。 圖6係顯示本發明的實施型態之處理室1之處理流程 之圖。 圖7係說明使基板垂直立起而蒸鍍的理由之圖。 圖8(a)係顯示本發明的處理室之第2實施型態之圖。 (b)係顯示本發明的處理室之第3實施型態之圖。 # 圖9係顯示本發明的處理室之第4實施型態之圖。 【主要元件符號說明】 1 :處理室 lbu :真空蒸鍍室 2 :搬送室 3 :裝載群組（cluster) 4 :收授室 5 :搬送機械臂 -19- 201028034 6 :基板 7 :蒸鍍部 8 :對準部 9 :處理收授部 1 〇 ·’蘭閥 1 1 :隔板 20 :保持手段（黏接性橡膠） 3 1 :加載互鎖（load-lock)室 41 :收授室之基板保持部 71 :蒸發源 81 ··遮蔽遮罩（shadow : mask) 92 :基板面控制手段 100:有機電激發光裝置之製造裝置 A〜D:群組（cluster)[Technical Field] The present invention relates to an apparatus for manufacturing an organic electroluminescence (hereinafter, also referred to as EL) device, a method for manufacturing the same, a film forming apparatus, and a film forming method, particularly An apparatus for manufacturing an organic electroluminescent device manufactured by a vapor deposition method and a method of manufacturing the same. • [Prior Art] As a powerful method for manufacturing organic electroluminescent devices, there is a vacuum distillation method. With the increase in the size of the display device, the organic electroluminescent device is also required to be enlarged, and the substrate size is even 15 〇〇 mm x 850 min. In the general vacuum evaporation method, in order to continue the stable vapor deposition, it is necessary to control the evaporation rate of the material from the evaporation source to be constant. When the steaming shovel material is heated by physical heating or induced heating to perform physical vapor deposition (PVC), the evaporation speed must be stabilized in a certain amount of time. Since Φ, the material from the evaporation source evaporates and cannot be easily controlled as if a switch was turned on and off. As a prior art for the production of the organic electroluminescent device by the vacuum evaporation method, there are the following Patent Documents 1 and 2. In the past, as in the following patent document, a substrate of one processing object was placed in a vacuum vapor deposition chamber for processing. In addition, in Patent Document 1, in order to shorten the processing time, a method of performing alignment (alignment) before the substrate is carried into the vacuum deposition chamber is employed. In Patent Document 2, a method of vapor-depositing the substrate is employed. In addition, as the size of the substrate has increased, the demand for substrate transfer capable of high-precision vapor deposition by a simple machine-5-201028034 has become higher. In the substrate transfer method of the general vacuum deposition method, a lower conveyance method in which the vapor deposition surface is carried downward is deposited by vapor deposition from below. In the following transfer method, the following is the evaporation of the ammonium surface, but it is necessary to keep the vapor deposition surface, and it cannot be transported as a frame part for the display surface. Further, along with the increase in size of the substrate, a vertical transfer method in which a substrate is inserted into a tray and vertically transported is also proposed. Regarding the prior art for substrate transfer, for example, the following Patent Documents 1 and 3. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 20-45963. 3] [Patent Document] [Problems to be Solved by the Invention] However, as described above, in order to keep the evaporation rate of the material constant, it is necessary to maintain evaporation. In other words, in the step of carrying out the substrate loading and unloading, the positioning step, and the like, which are not required to be vapor-deposited, it is necessary to evaporate, and the material evaporated by the evaporation source does not contribute to the vapor deposition step, and directly causes material loss. In the above-mentioned Patent Document 1, the alignment time is shortened, and the productivity is improved, so that the material loss is reduced. However, it takes a long time to carry out the loading and unloading of the substrate, and this is not a fundamental solution. In particular, organic electroluminescent materials are expensive, so that the products are expensive, which has a great influence on the popularity of organic electroluminescent devices. In addition, since the amount of the lost material increases, the frequency of exchange of the material also becomes high, and thus there is a problem that the time of the device is reduced. Further, the vapor deposition step is almost equal to the processing time of the other steps, and there is a problem of poor productivity. On the other hand, in the lower conveyance method, since only the frame portion is conveyed, the deflection due to the enlargement of the substrate is also increased. If the deflection becomes large, only the holding force of the frame portion is required, so a special holding mechanism must be provided. In addition, if the holding power is insufficient, the risk of falling is also high. Further, the problem of Φ of deflection not only affects the conveyance, but also affects the deflection of the shadow mask during vapor deposition below, and as a result of the influence of both, high-precision vapor deposition cannot be performed. Further, although the vertical conveyance can solve the problem of deflection, it is necessary to have a transfer tray, which is also a large object, and there is a problem that the tray may cause dust to be discharged during transportation or a tray recovery/cleaning mechanism. Accordingly, a first object of the present invention is to provide an organic electroluminescent device manufacturing apparatus or a method of manufacturing the same, or a film forming apparatus or a film forming method which has little loss of material and is economical. Further, a second object of the present invention is to provide a highly productive organic electroluminescent device manufacturing apparatus, a method of manufacturing the same, or a film forming apparatus or film forming method. Further, a third object of the present invention is to provide an apparatus for producing an organic electroluminescence device having a high operation rate, a method for producing the same, a film formation apparatus or a film formation method. Further, the "fourth object of the present invention" is to provide a device for manufacturing an organic electroluminescence device which is simple in surface transferability, a method for producing the same, a film forming device or a film forming method. Further, a fifth object of the present invention is to provide an apparatus for producing an organic electroluminescence device which can be vapor-deposited on the upper surface, or a method for producing the same, a film formation apparatus or a film formation method. [Means for Solving the Problem] In order to achieve the above object, the N (N is 2 or more) substrates are accommodated in the vacuum chamber, and the Nth substrate is deposited by the evaporation source when the first substrate is deposited by the evaporation source. The N-th substrate is carried into the vacuum chamber, and when the second substrate of the second one is vapor-deposited, the first substrate is carried out from the vacuum chamber to the first feature. Further, in order to achieve the above object, when the first substrate is vapor-deposited, the alignment of the second substrate is completed, and the second substrate is deposited by the same evaporation source as that during the vapor deposition. The first substrate is carried out from the vacuum chamber to have a second feature. Further, in order to achieve the above object, the substrate is carried in a load-lock chamber, passed through at least one vacuum chamber, and transported to the loading and unloading lock chamber, and the vapor deposition material is vapor-deposited in the vacuum chamber. In the case of the substrate, the vapor deposition surface of the substrate is transported on the upper surface, and at least when the substrate is moved, the transfer surface of the substrate is prevented from slipping to the third feature. Further, in order to achieve the above object, in addition to the first and second features, the evaporation source is moved to a vapor deposition position provided for each individual substrate as a fourth feature. Further, in order to achieve the above object, in addition to the first and second features, the mask mask necessary for aligning the position is integrated with the substrate as "8 - 201028034, and the position of the evaporation source is 5th. feature. Further, in order to achieve the above object, in addition to the first and second features, the substrate is moved to the position where the vapor deposition is performed, and then the alignment is performed to be the sixth feature. In addition, in addition to the first to third features, the substrate is subjected to the vapor deposition in a state in which the substrate is vertically raised, and the substrate conveyed in a horizontal state is perpendicular to the seventh feature. [Effects of the Invention] According to the present invention, it is possible to provide an apparatus for producing an organic electroluminescence device, a method for producing the same, or a film formation apparatus or a film formation method, which has little loss of material and is economical. Further, according to the present invention, it is possible to provide a highly productive organic electroluminescent device manufacturing apparatus, a method of manufacturing the same, or a film forming apparatus or a film forming method. Further, according to the present invention, it is possible to provide an apparatus for producing an organic electroluminescence device having a high operation rate, a method for producing the same, a film formation device or a film formation method. Further, according to the present invention, it is possible to provide an apparatus for manufacturing an organic electroluminescence device which is simple in structure and which can be carried on the upper surface, a method for producing the same, a film forming device or a film forming method. Further, according to the present invention, it is possible to provide an apparatus for producing an organic electroluminescence device which can be transported on the upper surface or to perform high-precision vapor deposition, a method for producing the same, a film formation apparatus or a film formation method. [Embodiment] 201028034 A first embodiment of the present invention will be described with reference to Figs. 1 to 5 . The organic EL device manufacturing device is not only a structure in which an luminescent material layer (EL layer) is sandwiched by electrodes, but also includes forming a positive hole injection layer or a transport layer on the anode, and forming an electron injection layer or a transport layer on the cathode. The various materials are formed into a film to form a multilayer structure, or a step of washing the substrate. Fig. 1 shows an example of the manufacturing apparatus. In the organic EL device manufacturing apparatus 100 of the present embodiment, four groups (A to D) of the loading group 3 and the processing substrate 6 φ of the substrate 6 to be processed are placed between the groups. Or the group consists of five receiving rooms 4 arranged between the loading group 3 or the next step (sealing step). In order to carry out the substrate after the next step, at least an unloading interlocking chamber (not shown) such as a load-lock chamber to be described later is provided. The loading group 3 is a load-lock chamber 31 having a gate valve 1 for maintaining a vacuum before and after, and a substrate 6 (hereinafter referred to as a substrate) is picked up by the load-lock chamber 31, and the substrate 6 is rotated. It is inserted into the transfer robot 5a of the reception room 4a. Each of the load lock chambers 31 and each of the reception chambers 4 has a gate valve 10 in front and rear, and controls the opening and closing of the gate valve 10 to maintain the vacuum while receiving the substrate to the loading group 3 or the next group. Each of the groups (A to D) has a transfer chamber 2 having one transport robot 5, and a substrate is received by the transport robot 5, and the processing is performed on the upper and lower processing chambers 1 (first) Subscripts a to d represent the group 'the second subscript u, and d represents the upper side of the upper side). A smell valve 10 is provided between the transfer chamber 2 and the processing chamber 1. -10-201028034 Fig. 2 shows a summary of the configuration of the transfer chamber 2 and the processing chamber 1. The configuration of the processing chamber 1 differs depending on the processing contents. Here, a vacuum vapor deposition chamber 1bu in which an luminescent material is vapor-deposited under vacuum to form an EL layer will be described as an example. Fig. 3 is a schematic view and an operation explanatory view showing the configuration of the transfer chamber 2b and the vacuum vapor deposition chamber lbu. The transport robot arm 5 of Fig. 2 has an arm 51 that can move up and down (see an arrow 53 in Fig. 3) and rotates left and right. The front end has two combs for substrate transport in two stages. Toothed hand 52. By making the upper and lower sections, the upper section can be used for loading, and the lower section is for carrying out, and the loading and unloading processing can be performed simultaneously by one operation. Making it 2 hands or 1 hand is determined by the content of the process. In the following description, in order to simplify the description, the description will be made with one hand. On the other hand, the vacuum vapor deposition chamber lbu is larger than the vapor deposition portion 7 which evaporates the light-emitting material on the substrate 6, and the alignment portion 8 which is required to be vapor-deposited on the substrate 6, and the transfer mechanism. The processing and receiving unit 9 is configured such that the arm 5 and the substrate are transferred to and from the vapor deposition unit 7. The alignment unit 8 and the process receiving unit 9 are provided with two systems of a right R line and a left L line. The processing and receiving unit 9 has a comb-shaped hand portion 91 that can receive the substrate 6 without interfering with the comb-like hand portion 52 of the transport robot arm 6 and fix the substrate 6, and the comb tooth The handle portion 91 is rotated to move the substrate 6 upright and to face the alignment portion 8 or the substrate surface control means 92 of the vapor deposition portion 7. As means 94 for fixing the substrate 6, a means such as electromagnetic adsorption or a clip is used in consideration of the operation in the vacuum. The alignment portion 8 has a shielding mask 81 formed by the mask 81m and the frame 81f and the alignment mark 84 on the substrate 6 as shown in FIG. 4 to make the -11 - 201028034 substrate 6 and the shielding mask 81 pair The alignment position is aligned with the drive unit 83. The steaming section 7 has a driving means 72 for moving the evaporation source 71 along the rail 76 in the vertical direction, and a driving mechanism 72 for moving the evaporation source 71 along the rail 75 between the right and left alignment portions. The evaporation source 71 is a luminescent material having a vapor deposition material therein, and a stable evaporation rate is obtained by heating control (not shown) of the vapor deposition material. As shown in the extension diagram of FIG. 3, a plurality of ejections are arranged by linear arrangement. The configuration in which the nozzle 73 is ejected. If necessary, the additive is heated while being vapor-deposited in a stable manner to carry out distillation. In the embodiment described above, the transfer mechanism that houses the load-lock chamber 31, the transfer robot arm 5a, the reception chamber 4, and the transfer chamber 2 of the loading group 3 is configured. 5 and the processing and receiving unit 9 of the processing chamber 1. These can be roughly classified into a transfer robot arm 5, 5a having a comb-like hand, and a load-lock chamber 31, a receiving chamber 4, and a process receiving chamber 9 into which the hand is inserted. The substrate 6 is simultaneously transferred by the interaction of the two groups. As an example, Fig. 5 shows a state in which the comb-like hand 52 of the transport robot 5 is inserted into the substrate holding portion 41 φ of the receiving room 4, and the state and structure of the substrate 6 are collected. The upper surface of the substrate 6 serves as a vaporized surface of the display surface, and the lower surface thereof is a non-display surface. In other words, the conveyance from the front lower side is maintained only in the contactable frame portion, and the conveyance on the upper side includes the central portion, which can be used as the contact area, so that stable transportation with little deflection can be achieved. In Fig. 5, two robot arms having comb-like hands 52 are shown, and three orbital substrate holding portions 41 are provided in the receiving chamber. In the upper surface of the comb-like hand portion 52 that is in contact with the substrate 6, the adhesive rubber 20 is provided as a holding means for holding the -12-201028034 while the hand is not slid. It is also possible to attach the rubber to the surface, but if the adhesion is too strong, it must be considered that the detachment is deteriorated. In addition to the adhesive rubber, electromagnetic adsorption can be applied in consideration of a vacuum environment. Second, focus on how to make high-precision evaporation possible. Fig. 6 is a view showing the processing flow of the processing chamber 1 shown in Figs. 1 to 3. There are two basic ideas for the processing of this embodiment. First, when one of the production lines is vapor-deposited, the other production line prepares for the substrate to be carried in and out, aligned, and vapor-deposited. As described in the problem of the invention, the steps of vapor deposition are almost the same as those required for other steps such as carrying out the substrate loading and unloading operation of the processing chamber 1, and are approximately one minute in each of the present embodiment. By performing this process interactively, the time for wasting evaporation can be reduced. The second point is that the substrate conveyed on the upper side is vertically raised and conveyed to the alignment portion 8 to be vapor-deposited. When the bottom surface of the substrate 6 is conveyed, it is necessary to reverse the surface of the vapor deposition surface. However, since the upper surface is the vapor deposition surface, it may be vertically raised. Stomach The reason why the substrate is vertically raised and vapor-deposited will be described with reference to Fig. 7 . As shown in Fig. 4, the size of the shadow mask 81 corresponding to the large substrate is about 1800 mm x 2000 mm, and the thickness of the mask 81 m is 40 μm, and there is a tendency to be thinner in the future. Here, when the thickness is reduced by about 5 kg from the lower surface and the weight of the mask 81 m is 200 kg, the mask 81m is greatly deflected by the weight of both. Since the deflected substrate is vapor-deposited with the curved mask 81m, it is vapor-deposited to the adjacent color region, and the color turbid state is caused to drop the chroma. Here, the substrate 6 and the shielding mask 81 are erected in an upright state to obtain a high-precision, high-color-colored color-13-201028034. Next, the processing flow of the present embodiment will be described with reference to FIG. . In Fig. 3, the presence of the substrate 6 is indicated by a solid line. First, the substrate 6R is carried in the R line (production line), and the substrate 6R is vertically moved up to the alignment portion 8R to be aligned (from step R1 to step R3). At this time, since the alignment is performed immediately after standing upright, the substrate 6 is transferred by the vapor deposition surface. Position alignment, as shown in the extension of FIG. 3, is photographed by the CCD camera 86, so that the alignment mark H provided on the substrate 6 enters the center of the window 85 provided in the mask 8 1m, so that the mask is masked. The 81R is controlled by the aforementioned alignment drive unit 83. In the case where the vapor deposition is a material that emits red (R) light, as shown in Fig. 4, a window portion is formed in a portion corresponding to R of the residual mask 81m, and the portion is vapor-deposited. The size of the window portion varies depending on the color, and is on the order of 50 μm wide and 150 μηη wide. The thickness of the mask 81m is 40 μm, and there is a tendency to be thinner in the future. After the end of the alignment, the evaporation source 71 is moved to the R line side (step R4), and thereafter the linear evaporation source 71 is moved up or down to perform vapor plating (step R5). In the R-line vapor deposition, the processing of steps L1 to L3 is performed in the same manner as the L line and the L line. That is, the other substrate 6L is carried in, and the substrate 6L is vertically erected and moved to the alignment portion 8L, and aligned with the position of the shielding mask 81L. After the vapor deposition of the substrate 6R of the R line is completed, the evaporation source 71 is moved to the L line (step L4), and deposited on the substrate 6L of the L line (step L5). At this time, before the evaporation source 71 is completely separated from the vapor deposition region of the R line, if the substrate 6R is separated by the alignment portion 8R, unnecessary vapor deposition may occur, so that after the complete separation, the substrate 6 R is processed. -14- 201028034 The movement of the room 1 is carried out, and then the preparation for entering the new substrate 6R. A partition 11 is provided between the production lines in order to avoid the aforementioned unnecessary vapor deposition. Further, Fig. 3 shows the state of step R5 and step L1. That is, the vapor deposition is started on the R line, and the substrate is carried into the vacuum deposition chamber lbu on the L line. Thereafter, by continuously performing the above-described flow, according to the present embodiment, it is possible to perform vapor deposition without using a vapor deposition material in addition to the movement time of the evaporation portion 7. If the evaporation time required for the above-mentioned evaporation time is about 1 minute with the other processing time and the movement time of the evaporation source 71 is 5 seconds, the vapor deposition time of the wasteful time of up to 1 minute can be shortened in this embodiment. It is 5 seconds. Further, according to the present embodiment, the processing cycle of one substrate for the vacuum vapor deposition chamber 1bu as shown in Fig. 6 is substantially the vapor deposition time + the movement time of the evaporation source 71, so that the productivity can be improved. When the processing time under the above conditions is evaluated, 'the present embodiment can be shortened to 1 minute and 5 seconds with respect to the previous 2 minutes', and the productivity is improved to about 2 times. The stomach and the 'time consumed by the steaming shovel portion 7 for the same amount of vapor deposition material' are not different from the previous example, but the production amount is doubled, thereby reducing the amount of material adhering to the wall of the vacuum chamber, and thus for the chamber wall The maintenance cycle time of the attachment and the required time can also be shortened. As a result, the operation rate of the apparatus can be improved according to this embodiment. In the above-described embodiment, in one processing apparatus, one processing line of the two systems including the alignment unit 8 and the processing receiving unit 9 is provided for one vapor deposition unit. For example, if the 'steaming time is 30 seconds and the other processing time is 1 minute', it is also possible to provide three processing lines for one steaming shovel portion 7 in one processing apparatus. -15- 201028034 can also obtain a large effect. Further, according to the present embodiment, the apparatus having the vapor deposition apparatus can achieve the above conveyance with a simple configuration. Further, according to the present embodiment, the substrate is lifted by the upper surface to be vapor-deposited, so that the substrate can be vapor-deposited with high precision and high chroma. Next, the second and third embodiments will be described with reference to Fig. 8 . In the first embodiment, the evaporation source 71 is moved and processed. In the present embodiment, Fig. 8(a) shows an example in which the alignment portion 8 is moved, and Fig. 8(b) shows an example in which the processing receiving portion 9 is moved. The basic action is the same as the implementation type 1. First, an example will be described in which the processing unit 9 of Fig. 8(a) collects and holds the alignment unit 8 of the substrate 6 and moves it. Further, in Fig. 6, the substrate 6, the alignment portion 8, and the processing receiving portion 9 are indicated by solid lines. First, the substrate 6R is carried in the R line (production line), the substrate 6R is vertically erected, and the substrate 6R is moved to the alignment portion 8R to be aligned. Thereafter, the alignment portions 8R and 8L are integrally moved to the left side by reaching the vapor deposition portion by the alignment base 8B. Further, the alignment portions 8R and 8L may be configured to move left and right individually. As the moving mechanism (not shown), a method in which a rail is provided in the same manner as in the embodiment 1 and moved thereon can be used. Next, vapor deposition of the substrate 6R is performed. When the substrate 6R is vapor-deposited, the alignment portion 8L comes before the processing receiving portion 9L. Therefore, the other substrate 6L can be received and processed such as alignment. After the vapor deposition process of the substrate 6R is completed, the alignment portions 8R and 8L are integrated and moved to the right after reaching the vapor deposition unit 7, and the vapor deposition process of the substrate 6L is performed. This time, before the alignment portion 8R comes to the process receiving portion 9R, the other substrate 6R can be prepared for the next vapor deposition. Further, Fig. 8(a) 201028034 shows a case where the substrate 6R is received in the alignment portion 8R when the substrate 6L is vapor-deposited. According to this embodiment, it is possible to obtain the same effect as that of the first embodiment in terms of the effect of lowering the amount of use of the steamed material and improving the productivity. Next, an example in which the processing receiving unit 9 of Fig. 8(b) moves and performs processing will be described. In this case, the alignment portion 8 and the vapor deposition portion 7 are fixed. The processing receiving units 9R and 9L are integrated and moved to the left and right. Further, the processing and receiving unit 9R' • 9L may be configured to move left and right. In this example, the processing unit 9 is moved, the substrate is vertically raised, and the alignment is performed to perform vapor deposition. When vapor deposition is performed, the other substrate can be carried in and the new substrate can be carried in. Further, Fig. 6(b) shows a case where the substrate 6R is carried into the process receiving portion 9R when the substrate 6L is vapor-deposited. That is, this embodiment has a smaller effect than the first two embodiments, but it is still somewhat more effective than the previous example. Further, according to the second and third embodiments, the upper conveyance can be carried out in a simple ® structure, and the substrate conveyed on the upper surface can be almost vertically erected, and vapor deposition can be performed with high precision and high chroma. Further, in the above embodiment, the vapor deposition unit 7, the alignment unit 8, and the process receiving unit 9 are disposed in the same vacuum chamber, but the gate valve is interposed to move between the vacuum chambers, and steaming may be performed. The plated portion 7 is provided in the processing chamber, and the alignment portion 8 and the process receiving portion 9 are provided in the transfer chamber or the like. The above embodiment is described in the case where the vapor deposition surface of the substrate 6 is transported upward. As another method of transporting the substrate, there is a method in which the vapor deposition surface is transported downward, and a method in which the substrate is placed in the tank and lifted and transported -17-201028034. In the examples described below, the effect of the above conveyance cannot be exhibited, but the effect of reducing the wasteful time of steaming can be exerted. When the vapor deposition surface is placed below, it is necessary to carry out the vapor deposition treatment from the lower side. Therefore, in the case of the above-described embodiment, the arrangement of the substrate 6, the alignment portion 8, and the vapor deposition portion 7 is maintained. Alternatively, the process of erecting the substrate vertically may be omitted as the processing flow. For example, FIG. 9 corresponds to the embodiment of the case of FIG. 3 in the case where the vapor deposition surface is below, and is configured to arrange the alignment portions 8R and 8L under the processing receiving portions 9R and 9L. The vapor deposition unit 7 is provided under the 8R and 8L, and the evaporation source 71 can be moved between the two alignment portions. Next, in the case of erecting and transporting, the above-described embodiment can be applied as long as the process of vertically erecting the substrate is omitted. As described above, the present invention can be applied to the decline in the effective use of the evaporation source regardless of the contents of the transfer method. On the other hand, the description of the above embodiment relating to the above-described embodiment of the present invention allows the transport system to be constructed in a vacuum, but it can also be disclosed in the vacuum chamber before the vacuum processing chamber as shown in Patent Document 3. A slip device is provided outside, and the arm is telescoped and moved into and out of the substrate before the processing chamber. In such a device, the present invention can also be applied to a transport system including the above-described slip device, telescopic mechanical arm, transporting and loading unit to the processing chamber, and processing and receiving unit in the processing chamber. Finally, the above description will be made by taking an organic EL device as an example. However, it is also possible to form a film by vapor deposition treatment having the same background as the organic EL device. The device and the film formation method are also applicable. -18- 201028034 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a manufacturing apparatus of an organic electroluminescent device of an embodiment of the present invention. Fig. 2 is a view showing a transfer chamber 2 and a processing chamber of an embodiment of the present invention! The composition of the main. Fig. 3 is a schematic view and an operation explanatory view showing a configuration of a transfer chamber and a processing chamber according to an embodiment of the present invention. Figure 4 is a diagram showing a shadow mask. Fig. 5 is a view showing a conveying mechanism of an embodiment of the present invention. Fig. 6 is a view showing the processing flow of the processing chamber 1 of the embodiment of the present invention. Fig. 7 is a view for explaining the reason why the substrate is vertically erected and vapor-deposited. Fig. 8 (a) is a view showing a second embodiment of the processing chamber of the present invention. (b) is a view showing a third embodiment of the processing chamber of the present invention. Fig. 9 is a view showing a fourth embodiment of the processing chamber of the present invention. [Explanation of main component symbols] 1 : Processing chamber lbu : Vacuum evaporation chamber 2 : Transfer chamber 3 : Loading group 4 : Receiving room 5 : Transfer robot arm 19 - 201028034 6 : Substrate 7 : vapor deposition unit 8 : Alignment portion 9 : Process receiving portion 1 〇 · 'Blue valve 1 1 : Separator 20 : Holding means (adhesive rubber) 3 1 : Load-lock chamber 41 : Receiving room Substrate holding portion 71: evaporation source 81 · shadow mask (mask: 92): substrate surface control means 100: manufacturing apparatus of organic electroluminescence device A to D: cluster