CN109609909B - Evaporation method and system - Google Patents
Evaporation method and system Download PDFInfo
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- CN109609909B CN109609909B CN201910005585.9A CN201910005585A CN109609909B CN 109609909 B CN109609909 B CN 109609909B CN 201910005585 A CN201910005585 A CN 201910005585A CN 109609909 B CN109609909 B CN 109609909B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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Abstract
The invention provides an evaporation method and an evaporation system, belongs to the technical field of display, and can at least partially solve the problem of short continuous evaporation time in the prior art. The evaporation method comprises the following steps: performing a first evaporation and a second evaporation in an evaporation process; closing the third evaporation source, evaporating a first material to the substrate at a first speed by using the first evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; the second evaporation comprises closing the first evaporation source, evaporating a first material to the substrate at a first speed by using the third evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; and the first rate is greater than the second rate.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to an evaporation method and an evaporation system.
Background
In the process of manufacturing an Organic Light-Emitting Diode (OLED) display panel, an evaporation method is usually used to form a part of a structural layer (e.g., a Light-Emitting layer) in an OLED device on a substrate, that is, an evaporation material is heated under a certain vacuum condition to evaporate (or sublimate) the evaporation material into vapor composed of atoms, molecules, or atomic groups, and then the vapor is condensed on the surface of the substrate to form an evaporation layer, thereby forming a corresponding structural layer in the OLED device.
In the related art, when forming a vapor deposition layer (for example, a light emitting layer) containing two materials on a substrate surface, there are mainly used two types of vapor deposition methods, the first type is a vapor deposition apparatus using two vapor deposition sources, one of which is used to deposit a first material on a substrate and the other is used to deposit a second material on the substrate. And the second type adopts an evaporation device with three evaporation sources, one of the evaporation sources is idle, one of the other two evaporation sources is used for evaporating a first material to the substrate, and the other evaporation source is used for evaporating a second material to the substrate. However, in the process of forming a vapor deposition layer on a substrate surface, the amount of the first material (for example, a host material of a light emitting layer) may be larger than the amount of the second material (for example, a dopant material of the light emitting layer), and therefore, when the first material is used up or the amount of the storage is insufficient, the vapor deposition apparatus needs to stop the vapor deposition process and perform charging to start the next vapor deposition process although the second material remains.
As can be seen from the above, in the related art, the maximum continuous vapor deposition time is limited by the vapor deposition source capacity of the vapor deposition apparatus. Because the capacity of the evaporation source of the evaporation device cannot be changed at will, a method and a system for increasing the evaporation time of the evaporation device on the premise of not changing the evaporation device are needed.
Disclosure of Invention
The invention at least partially solves the problem of short continuous evaporation time in the prior art, and provides an evaporation method and an evaporation system which increase the continuous evaporation time of an evaporation device on the premise of not changing the evaporation device.
The technical scheme adopted for solving the technical problem of the invention is an evaporation method, which is carried out by adopting evaporation equipment with at least one group of evaporation sources, wherein each group of evaporation source comprises a first evaporation source, a second evaporation source and a third evaporation source, and the evaporation method comprises the following steps:
performing a first evaporation and a second evaporation in an evaporation process;
closing the third evaporation source, evaporating a first material to the substrate at a first speed by using the first evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; the second evaporation comprises closing the first evaporation source, evaporating a first material to the substrate at a first speed by using the third evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; and the first rate is greater than the second rate.
Preferably, the first evaporation source, the second evaporation source and the third evaporation source of each group of evaporation sources are sequentially arranged in a line along a first direction, and a distance between the first evaporation source and the second evaporation source is equal to a distance between the second evaporation source and the third evaporation source;
the first evaporation comprises:
the material outlet of the first evaporation source evaporates the first material to the substrate at a radiation angle alpha 1 at a distance d1 from the surface to be evaporated of the substrate, and the material outlet of the second evaporation source evaporates the second material to the substrate at a radiation angle beta at a distance d2 from the surface to be evaporated of the substrate;
the second evaporation includes:
the material outlet of the third evaporation source evaporates the first material to the substrate at a radiation angle alpha 2 at a distance d1 from the surface to be evaporated of the substrate, and the material outlet of the second evaporation source evaporates the second material to the substrate at a radiation angle beta at a distance d2 from the surface to be evaporated of the substrate;
the radiation angle α 1 and the radiation angle α 2 are symmetrical with respect to a plane perpendicular to the first direction and passing through the midpoint of the second evaporation source, and the plane perpendicular to the first direction and passing through the midpoint of the second evaporation source also divides the radiation angle β into two symmetrical parts.
Further, the first evaporation includes:
the first evaporation source and the second evaporation source of each group of evaporation sources reciprocate between a first position and a second position from the first position in a direction parallel to the first direction;
the second evaporation includes:
the third evaporation source and the second evaporation source of each set of evaporation sources reciprocate between the second position and the first position from the second position in a direction parallel to the first direction.
Preferably, the performing of the first evaporation and the second evaporation includes: performing the first evaporation to form an evaporation layer on the first substrate, and performing the second evaporation to form an evaporation layer on the second substrate;
the first evaporation comprises: starting from a first position, the first evaporation source and the second evaporation source of each group of evaporation sources perform i times of reciprocating motion between the first position and a second position;
the second evaporation includes: starting from a second position, the third evaporation source and the second evaporation source of each group of evaporation sources perform i times of reciprocating motion between the second position and the first position;
wherein i is a positive integer greater than or equal to 1.
Further, the first evaporation includes: the first evaporation source and the second evaporation source of each group of evaporation sources move from a first position to a second position in a direction parallel to a first direction;
the second evaporation includes: the third evaporation source and the second evaporation source of each set of evaporation sources move from the second position to the first position in a direction parallel to the first direction.
Preferably, the performing of the first evaporation and the second evaporation includes: performing the first evaporation to form an evaporation layer on a third substrate, and performing the second evaporation to form an evaporation layer on a fourth substrate;
the first evaporation comprises: the first evaporation source and the second evaporation source of each group of evaporation sources perform m single-pass motions from a first position to a second position;
the second evaporation includes: the third evaporation source and the second evaporation source of each group of evaporation sources perform m single-pass motions from a second position to a first position;
wherein m is a positive integer greater than or equal to 1.
Preferably, the radiation angles α 1 and α 2 are both 45 ° to 85 °, and the radiation angle β is 45 ° to 85 °;
the d1 is 200mm to 700mm, and the d2 is 200mm to 700 mm.
Further, the evaporation equipment comprises a plurality of groups of evaporation sources, the first evaporation sources in each group of evaporation sources are arranged in a row in parallel with the second direction at equal intervals, the second evaporation sources in each group of evaporation sources are arranged in a row in parallel with the second direction at equal intervals, the third evaporation sources in each group of evaporation sources are arranged in a row in parallel with the second direction at equal intervals, and the first direction and the second direction are perpendicular to each other.
Preferably, the first material is a host material of a structural layer in the organic light emitting diode device, and the second material is a doping material of the structural layer in the organic light emitting diode device.
The technical scheme adopted for solving the technical problem of the invention is that the evaporation system comprises evaporation equipment and control equipment, wherein the evaporation equipment comprises a plurality of groups of evaporation sources, each group of evaporation source comprises a first evaporation source, a second evaporation source and a third evaporation source,
the first evaporation source and the third evaporation source are used for evaporating a first material to the substrate;
the second evaporation source is used for evaporating a second material to the substrate;
the control device is used for controlling the evaporation device to carry out evaporation according to the evaporation method.
Drawings
FIG. 1 is a schematic diagram of a first evaporation source and a second evaporation source for evaporating a substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a third evaporation source and a second evaporation source for evaporating a substrate according to an embodiment of the present invention;
fig. 3 is a schematic view of an alternative evaporation path when a first evaporation source and a second evaporation source of an evaporation apparatus perform evaporation on a substrate according to an embodiment of the present invention;
fig. 4 is a schematic view of an evaporation source of an evaporation apparatus according to an embodiment of the present invention at a first position;
fig. 5 is a schematic view of an evaporation source of an evaporation apparatus according to an embodiment of the present invention at a second position;
FIG. 6 is a schematic diagram of an evaporation model of a three-layer evaporation layer on a C substrate and a D substrate according to an embodiment of the present invention;
fig. 7 is a schematic view of another alternative evaporation path when a third evaporation source and a second evaporation source are used for evaporating a substrate according to an embodiment of the invention;
FIG. 8 is a schematic diagram of an evaporation model of three different sub-layers on an E substrate and an F substrate according to an embodiment of the present invention;
wherein the reference numerals are: 11. a, a substrate; 12. b, a substrate; 13. c, a substrate; 14. e, a substrate; 21. a first evaporation source; 22. a second evaporation source; 23. and a third evaporation source.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
In the present invention, the first, second, and third evaporation sources among the first, second, and third evaporation sources are used only to distinguish the three evaporation sources, and the structure of the evaporation sources is not limited.
The first, second, and third vapor deposition sources in the drawings should not be construed as limiting the lateral direction of the vapor deposition sources, and the operation of the three vapor deposition sources will be described only for convenience.
The first direction is only used for indicating the arrangement direction of the first evaporation source, the second evaporation source and the third evaporation source.
One evaporation process refers to one-time feeding or one-time installation of the first evaporation source, the second evaporation source and the third evaporation source until evaporation can not be continued. For example, the second evaporation material is used up, or both the first and third evaporation sources are used up.
Example 1:
as shown in fig. 1 to 8, the present embodiment provides an evaporation method, including: the method is carried out by adopting evaporation equipment with at least one group of evaporation sources, wherein each group of evaporation sources comprises a first evaporation source 21, a second evaporation source 22 and a third evaporation source 23, and the evaporation method comprises the following steps:
performing a first evaporation and a second evaporation in an evaporation process;
wherein the first evaporation comprises closing the third evaporation source 23, evaporating the first material on the substrate at a first rate by using the first evaporation source 21, and evaporating the second material on the substrate at a second rate by using the second evaporation source 22; the second vapor deposition includes closing the first vapor deposition source 21, depositing the first material on the substrate at a first rate by using the third vapor deposition source 23, and depositing the second material on the substrate at a second rate by using the second vapor deposition source 22; and the first rate is greater than the second rate.
The evaporation apparatus may comprise one set of evaporation sources or a plurality of sets of evaporation sources, and in one evaporation process, the first evaporation source 21 and the third evaporation source 23 of at least one set of evaporation sources are used for evaporating the first material. Therefore, the total amount of the first material stored in the evaporation apparatus is increased compared to the total amount of the first material stored in the evaporation apparatus in the related art, thereby increasing the maximum continuous evaporation time of an evaporation process compared to the related art.
Preferably, when a plurality of substrates are successively subjected to vapor deposition, the plurality of substrates may be first subjected to vapor deposition by the first vapor deposition, and after the first material stored in the first vapor deposition source 21 is used up, the other plurality of substrates may be subjected to vapor deposition by the second vapor deposition. By continuously using the first vapor deposition source 21 and the second vapor deposition source 22 to perform vapor deposition on the substrate, the first material in the first vapor deposition source 21 and the second material in the second vapor deposition source 22 can be kept at high temperatures at all times, and therefore, time and cost for heating the first material in the first vapor deposition source 21 and the second material in the second vapor deposition source 22 again from low temperatures to high temperatures are avoided. Similarly, the second evaporation may be used to evaporate the plurality of substrates first, and the first evaporation may be used to evaporate the other plurality of substrates after the first material stored in the third evaporation source 23 is used up. The first material stored in the first vapor deposition source 21 may be used up, the number of substrates on which vapor deposition is completed by the first vapor deposition may be a predetermined number, or the time for continuous vapor deposition by the first vapor deposition may be a predetermined vapor deposition time. The predetermined amount and the predetermined time can be specifically set according to the requirements of the evaporation process.
Optionally, the first material is a host material of a structural layer in the organic light emitting diode device, and the second material is a dopant material of the structural layer in the organic light emitting diode device.
The method of the present invention is particularly suitable for organic light emitting diode devices in which a portion of the structural layer (e.g., the light emitting layer) is composed of a host material and a dopant material, wherein the amount of the host material is necessarily greater than the amount of the dopant material.
In the following, a preferred radiation angle of the material outlet of the first vapor deposition source 21 and the material outlet of the second vapor deposition source 22 and a preferred distance from the surface to be vapor-deposited of the a substrate when the first vapor deposition is used for the a substrate will be described by taking the first vapor deposition and the second vapor deposition as examples of the substrate a and the substrate B, respectively. Introduction B substrate when the second evaporation is used, a preferred radiation angle of the material outlet of the third evaporation source 23 and the material outlet of the second evaporation source 22 and a preferred distance from the B substrate surface to be evaporated are preferred. Of course, more substrates are equally suitable.
As shown in fig. 1, the completion of the evaporation on the a substrate 11 by the first evaporation may include:
the material outlet of the first evaporation source 21 evaporates a first material to the substrate at a radiation angle α 1 from the surface to be evaporated d1 of the substrate, and the material outlet of the second evaporation source 22 evaporates a second material to the substrate at a radiation angle β from the surface to be evaporated d2 of the substrate;
as shown in fig. 2, the completion of the evaporation of the B substrate 12 by the second evaporation may include:
the material outlet of the third evaporation source 23 evaporates the first material to the substrate at a radiation angle α 2 at a distance d1 from the surface to be evaporated of the substrate, and the material outlet of the second evaporation source 22 evaporates the second material to the substrate at a radiation angle β at a distance d2 from the surface to be evaporated of the substrate;
the radiation angles α 1 and α 2 are symmetrical with respect to a plane perpendicular to the first direction and passing through the midpoint of the second evaporation source 22, and the plane perpendicular to the first direction and passing through the midpoint of the second evaporation source 22 also divides the radiation angle β into two symmetrical parts.
As shown in fig. 1 and 2, the radiation angle α 1 and the two angles in the horizontal direction are an angle 1-1 and an angle 1-2, the radiation angle β and the two angles in the horizontal direction are an angle 2-1 and an angle 2-2, and the radiation angle α 2 and the two angles in the horizontal direction are an angle 3-1 and an angle 3-2, where α 1 is α 2, 1-1 is 3-1,2-1 is 2-2, and 1-2 is 3-2, so that the vapor deposition performed by the first vapor deposition source 21 and the second vapor deposition source 22 is completely symmetrical to the vapor deposition performed by the third vapor deposition source 23 and the second vapor deposition source 22.
Alternatively, the first evaporation source 21, the second evaporation source 22 and the third evaporation source 23 may use an angle plate to limit how much radiation angle to the substrate the material is evaporated toward the substrate, that is, the angle plate limits the extent to which the evaporated material is deposited on the substrate.
Preferably, the radiation angles α 1 and α 2 are 45 ° to 85 °, and the radiation angle β is 45 ° to 85 °; d1 is 200mm to 700mm, d2 is 200mm to 700 mm. More preferably, d1 ═ d 2.
When carrying out first coating by vaporization and second coating by vaporization, adopt above-mentioned preferred radiation angle and preferred distance, first coating by vaporization, the absolute distribution of the coating by vaporization material that the second coating by vaporization produced is different like this, but the material export of first coating by vaporization source 21 and third coating by vaporization source 23 is symmetrical each other, the material export of first coating by vaporization source 21 and third coating by vaporization source 23 is with the first material of radiation angle coating by vaporization of mutual symmetry towards the base plate, and when carrying out first coating by vaporization and when carrying out the second coating by vaporization, the material export of second coating by vaporization source 22 is treated the coating by vaporization surface distance equal apart from the base plate, the material export of second coating by vaporization source 22 is perpendicular to the base plate and is treated the coating by vaporization surface coating by vaporization second material to the base plate, consequently, be favorable to improving the uniformity of.
Further, to form a deposition layer having a larger area on the substrate, the first deposition may further include: the first evaporation source 21 and the second evaporation source 22 perform a linear reciprocating motion or a single-pass motion parallel to the first direction between the first position and the second position, and the first material and the second material are evaporated on the substrate during the motion. And the second evaporation may further include: the third evaporation source 23 and the second evaporation source 22 perform a linear reciprocating motion or a single-pass motion parallel to the first direction between the first position and the second position, and the first material and the second material are evaporated on the substrate during the motion.
Meanwhile, the amounts of the evaporation materials emitted by the evaporation sources in different directions have certain differences, so that when two evaporation sources are adopted for evaporation of the two materials, the proportions of the two materials in the evaporation layers at different positions relative to the two evaporation sources are different. When the evaporation source moves, the evaporation layer is actually formed at different positions along the thickness direction relative to the evaporation source, so that the proportion of the two materials at different positions in the thickness direction of the evaporation layer is also different. Therefore, it is important to design a reasonable evaporation path for the evaporation source.
Several alternative evaporation paths for the first evaporation source 21 and the second evaporation source 22, and several alternative evaporation paths for the third evaporation source 23 and the second evaporation source 22 are described below with 6 substrates.
Alternatively, an alternative evaporation path of the first evaporation source 21 and the second evaporation source 22 when the C substrate adopts the first evaporation, and an alternative evaporation path of the third evaporation source 23 and the second evaporation source 22 when the D substrate adopts the second evaporation in one evaporation process will be described below. Of course, more substrates are equally suitable for this method.
As shown in fig. 3, the first vapor deposition source 21 and the second vapor deposition source 22 reciprocate i times from the first position (left position in the figure) to the second position (right position in the figure) to form a vapor deposition layer on the C substrate 13, and vapor deposition of one layer of the vapor deposition layer of the C substrate is completed during each reciprocation.
The third evaporation source 23 and the second evaporation source 22 reciprocate j times from the first position to the second position to form an evaporation layer on the D substrate, and evaporation of one sub-evaporation layer in the evaporation layers of the D substrate is completed in each reciprocation.
A first evaporation source 21 combination consisting of a first evaporation source 21 and a second evaporation source 22 when the substrate is subjected to first evaporation; when the second vapor deposition is performed on the substrate, the first vapor deposition source 21 including the third vapor deposition source 23 and the second vapor deposition source 22 is combined. When the substrate C adopts the first evaporation, the first evaporation source 21 adopts the above preferred evaporation angle and preferred distance in combination; when the second vapor deposition is used for the D substrate, the second vapor deposition source 22 uses the above-described preferred vapor deposition angle and preferred distance in combination. The sub-evaporation layers corresponding to the substrates C and D are formed in the process that the first evaporation source 21 combination and the second evaporation source 22 combination move in opposite directions. Therefore, if the arrangement direction and the movement direction of the first material to the second material in the first vapor deposition source 21 combination are the same, the arrangement direction and the movement direction of the first material to the second material in the second vapor deposition source 22 combination are also necessarily the same; if the arrangement direction and the moving direction of the first material to the second material in the first vapor deposition source 21 combination are opposite, the arrangement direction and the moving direction of the first material to the second material in the second vapor deposition source 22 combination are also necessarily opposite. Therefore, the evaporation models of the corresponding sub-evaporation layers on the C substrate and the D substrate are the same, the sub-evaporation layer directly evaporated on the surfaces of the C substrate and the D substrate is taken as the first sub-evaporation layer, and the evaporation model refers to a proportion model of the first material and the second material at different positions of the evaporation layer in the thickness direction.
As shown in fig. 6, a schematic diagram of a vapor deposition model of 3 layers of sub-vapor deposition layers on the C substrate and the D substrate is shown, in which an arc represents one layer of sub-vapor deposition layer, the left side of the arc is the content of the second material in the vapor deposition layers of the C substrate and the D substrate, and the right side is the content of the first material.
Of course, the times i and j are positive integers, and the times i and j may not be equal, but preferably, the times i and j are equal, that is, j is i, which may be specifically set according to requirements.
The above mode can realize that the evaporation coating models of the evaporation coating of the substrate obtained by the first evaporation coating and the evaporation coating of the substrate obtained by the second evaporation coating are the same, thereby ensuring the consistency of the product performance.
Optionally, the E substrate is subjected to the first evaporation and the F substrate is subjected to the second evaporation. As shown in fig. 7, the third vapor deposition source 23 and the second vapor deposition source 22 may start from a first position (left position in the figure), and the first vapor deposition source 21 and the second vapor deposition source 22 may start from a second position (right position in the figure). Thus, the evaporation models of the sub-evaporation layers on the E substrate and the F substrate are changed, and the schematic diagrams of the evaporation models of the 3 sub-evaporation layers on the E substrate and the F substrate are shown in fig. 8. In the figure, an arc represents a sub-deposition layer, the left part of the arc is the content of the second material in the deposition layers of the E substrate and the F substrate, and the right part of the arc is the content of the first material. The vapor deposition models of the vapor deposition layers of the E substrate and the F substrate are the same based on the same principle as described above, but the vapor deposition models of the vapor deposition layers of the E substrate and the F substrate are different from those of the vapor deposition layers of the C substrate and the D substrate because the first layer sub-vapor deposition layers of the E substrate and the F substrate are formed by the combination of the second vapor deposition source 22 and the reciprocating movement of the combination with the first position as the starting point.
Alternatively, as shown in fig. 4 and 5, the evaporation apparatus includes a plurality of sets of evaporation sources, each set including a first evaporation source 21, a second evaporation source 22, and a third evaporation source 23 arranged in a row in the first direction. The distance between the first evaporation source 21 and the second evaporation source 22 is equal to the distance between the second evaporation source 22 and the third evaporation source 23, that is, the distance in the first direction between the material outlet of the first evaporation source 21 and the material outlet of the second evaporation source 22 is equal to the distance in the first direction between the material outlet of the second evaporation source 22 and the material outlet of the third evaporation source 23.
The first evaporation sources 21 in each group of evaporation sources are arranged in a line parallel to the second direction at equal intervals, and the line source is the line source for evaporating the first evaporation sources 21; the second evaporation sources 22 in each group of evaporation sources are arranged in a line parallel to the second direction at equal intervals, and the line source is the line source of the second evaporation source 22; the third evaporation sources 23 in each group of evaporation sources are arranged in a line parallel to the second direction at equal intervals, and the line source is the line source of the third evaporation source 23; the first direction X and the second direction Y are perpendicular to each other. Accordingly, the first, second, and third vapor deposition source 21, 22, and 23 line sources may form a vapor deposition layer having a larger area on the substrate.
Alternatively, another optional evaporation path of the first evaporation source 21 and the second evaporation source 22 when the G substrate adopts the first evaporation in one evaporation process, and an optional evaporation path of the third evaporation source 23 and the second evaporation source 22 when the H substrate adopts the second evaporation in one evaporation process will be described below. Of course, more substrates are equally suitable for this method.
The first evaporation source 21 and the second evaporation source 22 perform m single-pass movements from the first position to the second position, and one sub-evaporation layer of the G-substrate evaporation layers is formed in each single-pass movement of the first evaporation source 21 and the second evaporation source 22;
the third vapor deposition source 23 and the second vapor deposition source 22 perform n single-pass movements from the second position to the first position, and one sub-vapor deposition layer of the H-substrate vapor deposition layers is formed in each single-pass movement of the first vapor deposition source 21 and the second vapor deposition source 22.
When the first vapor deposition is used for the G substrate, the first vapor deposition source 21 and the second vapor deposition source 22 adopt the preferred vapor deposition angles of the first vapor deposition source 21 and the second vapor deposition source 22, and when the second vapor deposition is used for the H substrate, the third vapor deposition source 23 and the second vapor deposition source 22 adopt the preferred vapor deposition angles of the third vapor deposition source 23 and the second vapor deposition source 22. The evaporation models of the sub-evaporation layers with the corresponding number of layers on the G substrate and the H substrate are the same.
Of course, the times m and n are positive integers, and the times m and n may be equal or unequal, which may be specifically set according to requirements.
For the same reason as described above, the vapor deposition models of the vapor deposition layers of the G substrate and the H substrate are the same.
Alternatively, it is described below that in one evaporation process, a part of the sub-evaporation layers of the I substrate and the J substrate are formed by using a first evaporation layer, and the other part of the sub-evaporation layers are formed by using a second evaporation layer. Another alternative evaporation path of the first evaporation source 21 and the second evaporation source 22, and another alternative evaporation path of the three evaporation sources and the second evaporation source 22. Of course, more substrates are equally suitable for this method. The example is given by the way that the evaporation layers of the I substrate and the J substrate both comprise 3 sub-evaporation layers.
Optionally, in one evaporation process, part of the sub-evaporation layers of the I substrate and the J substrate are formed by a first evaporation layer, and the other part of the sub-evaporation layers are formed by a second evaporation layer. In order to realize the same vapor deposition patterns for the respective sub-vapor deposition layers on the I substrate and the J substrate, the vapor deposition radiation angles used by the first vapor deposition source 21, the second vapor deposition source 22, and the third vapor deposition source 23 when the I substrate and the J substrate are vapor deposited may be the above-described preferred vapor deposition radiation angles. The example is given by the way that the evaporation layers of the I substrate and the J substrate both comprise 3 sub-evaporation layers. Another alternative evaporation path of the first evaporation source 21 and the second evaporation source 22, and another alternative evaporation path of the three evaporation sources and the second evaporation source 22.
The first evaporation source 21 and the second evaporation source 22 form a first sub-evaporation layer of the evaporation layers on the I-substrate in one single-pass movement from the first position to the second position.
The second layer of the vapor deposition layer is formed on the I substrate in one single movement of the first vapor deposition source 21 and the second vapor deposition source 22 from the first position to the second position.
The third evaporation source 23 and the second evaporation source 22 form the third sub-evaporation layer of the evaporation layers on the I substrate in one single movement from the second position to the first position.
The first sub-deposition layer of the deposition layers is formed on the J substrate in one single movement of the third deposition source 23 and the second deposition source 22 from the second position to the first position.
The second evaporation source 23 and the second evaporation source 22 form a second layer of the evaporation layers on the J substrate in one single movement from the second position to the first position.
The third layer of the vapor deposition layer is formed on the J substrate in one single movement of the first vapor deposition source 21 and the second vapor deposition source 22 from the first position to the second position.
For the same reason as described above, the vapor deposition models of the vapor deposition layers of the I substrate and the J substrate are the same.
Further, in the first vapor deposition, the following can be adjusted: the radiation angle of the first evaporation source 21 for evaporating the first material, the radiation angle of the second evaporation source 22 for evaporating the second material, and the distances from the material outlets of the first evaporation source 21 and the second evaporation source 22 to the surface to be evaporated of the substrate are set so that the boundary of the first material evaporated by the first evaporation source 21 deposited on the substrate coincides with the boundary of the second material evaporated by the second evaporation source 22 deposited on the substrate. In the second vapor deposition, the third vapor deposition source 23 and the second vapor deposition source 22 may be adjusted according to the settings of the first vapor deposition source 21 and the second vapor deposition source 22 in the first vapor deposition.
Example 2:
this embodiment provides an evaporation plating system, including evaporation plating equipment and controlgear, evaporation plating equipment includes the multiunit evaporation plating source, and every group evaporation plating source includes first evaporation plating source, second evaporation plating source, third evaporation plating source.
The first evaporation source and the third evaporation source are used for evaporating the first material to the substrate.
And a second evaporation source for evaporating a second material onto the substrate.
And a control device for controlling the evaporation device to carry out evaporation according to the evaporation method of the embodiment 1.
Further, the first evaporation source, the second evaporation source and the third evaporation source may adjust the radiation angle of the evaporated material through respective angle plates, respectively. For example, in the line source evaporation process, angle plates (straight plates) can be added on two sides of the line source to limit the range of the material evaporated by each evaporation source to be deposited on the substrate, so that the evaporation quality is ensured. In the case of evaporation of two or three materials together, the radiation angle of the materials can be limited by an angle plate, so that the materials can be mixed according to a certain proportion.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. An evaporation method is characterized by being carried out by adopting evaporation equipment with at least one group of evaporation sources, wherein each group of evaporation sources comprises a first evaporation source, a second evaporation source and a third evaporation source, and the evaporation method comprises the following steps:
performing a first evaporation and a second evaporation in an evaporation process;
closing the third evaporation source, evaporating a first material to the substrate at a first speed by using the first evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; the second evaporation comprises closing the first evaporation source, evaporating a first material to the substrate at a first speed by using the third evaporation source, and evaporating a second material to the substrate at a second speed by using the second evaporation source; and the first rate is greater than the second rate;
the first evaporation source, the second evaporation source and the third evaporation source of each group of evaporation sources are sequentially arranged in a line along a first direction, and the distance between the first evaporation source and the second evaporation source is equal to the distance between the second evaporation source and the third evaporation source;
the first evaporation comprises:
the material outlet of the first evaporation source evaporates the first material to the substrate at a radiation angle alpha 1 at a distance d1 from the surface to be evaporated of the substrate, and the material outlet of the second evaporation source evaporates the second material to the substrate at a radiation angle beta at a distance d2 from the surface to be evaporated of the substrate;
the second evaporation includes:
the material outlet of the third evaporation source evaporates the first material to the substrate at a radiation angle alpha 2 at a distance d1 from the surface to be evaporated of the substrate, and the material outlet of the second evaporation source evaporates the second material to the substrate at a radiation angle beta at a distance d2 from the surface to be evaporated of the substrate;
the radiation angle α 1 and the radiation angle α 2 are symmetrical with respect to a plane perpendicular to the first direction and passing through the midpoint of the second evaporation source, and the plane perpendicular to the first direction and passing through the midpoint of the second evaporation source also divides the radiation angle β into two symmetrical parts.
2. The evaporation method according to claim 1, wherein the first evaporation comprises:
the first evaporation source and the second evaporation source of each group of evaporation sources reciprocate between a first position and a second position from the first position in a direction parallel to the first direction;
the second evaporation includes:
the third evaporation source and the second evaporation source of each set of evaporation sources reciprocate between the second position and the first position from the second position in a direction parallel to the first direction.
3. A vapor deposition method according to claim 2, wherein said performing of the first vapor deposition and the second vapor deposition comprises: performing the first evaporation to form an evaporation layer on the first substrate, and performing the second evaporation to form an evaporation layer on the second substrate;
the first evaporation comprises: starting from a first position, the first evaporation source and the second evaporation source of each group of evaporation sources perform i times of reciprocating motion between the first position and a second position;
the second evaporation includes: starting from a second position, the third evaporation source and the second evaporation source of each group of evaporation sources perform i times of reciprocating motion between the second position and the first position;
wherein i is a positive integer greater than or equal to 1.
4. A vapor deposition method according to claim 1,
the first evaporation comprises: the first evaporation source and the second evaporation source of each group of evaporation sources move from a first position to a second position in a direction parallel to a first direction;
the second evaporation includes: the third evaporation source and the second evaporation source of each set of evaporation sources move from the second position to the first position in a direction parallel to the first direction.
5. The evaporation method according to claim 4, wherein said performing the first evaporation and the second evaporation comprises: performing the first evaporation to form an evaporation layer on a third substrate, and performing the second evaporation to form an evaporation layer on a fourth substrate;
the first evaporation comprises: the first evaporation source and the second evaporation source of each group of evaporation sources perform m single-pass motions from a first position to a second position;
the second evaporation includes: the third evaporation source and the second evaporation source of each group of evaporation sources perform m single-pass motions from a second position to a first position;
wherein m is a positive integer greater than or equal to 1.
6. A vapor deposition method according to claim 1, wherein each of the radiation angles α 1 and α 2 is 45 ° to 85 °, and the radiation angle β is 45 ° to 85 °;
the d1 is 200mm to 700mm, and the d2 is 200mm to 700 mm.
7. An evaporation method according to claim 1, wherein the evaporation apparatus comprises a plurality of groups of evaporation sources, the first evaporation sources in each group of evaporation sources are arranged in a row with equal spacing parallel to the second direction, the second evaporation sources in each group of evaporation sources are arranged in a row with equal spacing parallel to the second direction, the third evaporation sources in each group of evaporation sources are arranged in a row with equal spacing parallel to the second direction, and the first direction and the second direction are perpendicular to each other.
8. The evaporation method according to claim 1, wherein the first material is a host material of a structure layer in an organic light emitting diode device, and the second material is a dopant material of the structure layer in the organic light emitting diode device.
9. An evaporation system comprises evaporation equipment and control equipment, wherein the evaporation equipment comprises a plurality of groups of evaporation sources, each group of evaporation source comprises a first evaporation source, a second evaporation source and a third evaporation source,
the first evaporation source and the third evaporation source are used for evaporating a first material to the substrate;
the second evaporation source is used for evaporating a second material to the substrate;
the control device is used for controlling the evaporation device to carry out evaporation according to the evaporation method of any one of claims 1 to 8.
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