CN109609909A - Evaporation coating method and system - Google Patents
Evaporation coating method and system Download PDFInfo
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- CN109609909A CN109609909A CN201910005585.9A CN201910005585A CN109609909A CN 109609909 A CN109609909 A CN 109609909A CN 201910005585 A CN201910005585 A CN 201910005585A CN 109609909 A CN109609909 A CN 109609909A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of evaporation coating method and system, belongs to field of display technology, can at least partly solve the problems, such as that the existing continuous evaporating-plating time is short.Evaporation coating method of the present invention includes: to carry out the first vapor deposition and the second vapor deposition in a vapor deposition processing procedure；Wherein, first vapor deposition includes closing the third evaporation source, uses first evaporation source that the first material is deposited to substrate with first rate, uses second evaporation source that the second material is deposited to the substrate with the second rate；Second vapor deposition includes closing first evaporation source, uses the third evaporation source that the first material is deposited to the substrate with first rate, uses second evaporation source that the second material is deposited to the substrate with the second rate；And the first rate is greater than second rate.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of evaporation coating method and system.
Background technique
Organic Light Emitting Diode (English: Organic Light-Emitting Diode；Referred to as: OLED) display panel
In preparation process, the part-structure layer (such as luminescent layer) in OLED device, Ye Ji are formed on substrate frequently with vapour deposition method
Certain heated under vacuum evaporation material makes evaporation material evaporation (or distillation) Cheng Yuanzi, molecule or atomic group composition
Then steam condenses in substrate surface and forms vapor deposition layer, and then forms the corresponding construction layer in OLED device.
In the related technology, when substrate surface forms and includes vapor deposition layer (such as luminescent layer) of two kinds of materials, the steaming of use
There are mainly two types of for electroplating method, the first, there are two the evaporated device of evaporation source, an evaporation sources of the evaporated device for use
For the first material to be deposited to substrate, another evaporation source is used to that the second material to be deposited to substrate.Second, using there are three steamings
One evaporation source of the evaporated device in plating source, the evaporated device is idle, and one in other two evaporation source to substrate for steaming
The first material is plated, another is used to that the second material to be deposited to substrate.The appearance of each evaporation source storage evaporation material of evaporated device
Measure it is identical, but substrate surface formed vapor deposition layer during, the dosage of the first material (such as material of main part of luminescent layer) can
Can be greater than the second material (such as dopant material of luminescent layer) dosage, therefore once the first material be finished or amount of storage not
Foot, although then there are also residues, evaporated device to need to stop this vapor deposition processing procedure, be fed and start next steaming for the second material
Plate processing procedure.
Based on above-mentioned it is found that in the related art, limit of the longest continuous evaporating-plating time by the evaporation source capacity of evaporated device
System.Since the capacity of the evaporation source of evaporated device cannot be changed arbitrarily, it is therefore desirable to find and a kind of not change evaporated device
Under the premise of, increase the method and system of evaporated device evaporation time.
Summary of the invention
The present invention at least partly solves the problems, such as that the existing continuous evaporating-plating time is short, provides one kind and is not changing evaporated device
Under the premise of, increase the evaporation coating method and system of the time of evaporated device continuous evaporating-plating.
Solving technical solution used by present invention problem is a kind of evaporation coating method, using at least one set of vapor deposition
The evaporated device in source carries out, and every group of evaporation source includes the first evaporation source, the second evaporation source, third evaporation source, the evaporation coating method
Include:
In a vapor deposition processing procedure, the first vapor deposition and the second vapor deposition are carried out；
Wherein, first vapor deposition includes closing the third evaporation source, uses first evaporation source with the first speed
The first material is deposited to substrate in rate, uses second evaporation source that the second material is deposited to the substrate with the second rate；It is described
Second vapor deposition includes closing first evaporation source, the third evaporation source being used to be deposited with first rate to the substrate
First material uses second evaporation source that the second material is deposited to the substrate with the second rate；And the first rate is big
In second rate.
Preferably, first evaporation source of evaporation source described in every group, the second evaporation source, third evaporation source are along first direction
It is successively in line, the distance between first evaporation source and second evaporation source are equal to second evaporation source and described
The distance between third evaporation source；
It is described first vapor deposition include:
The material outlet of first evaporation source is at the surface d1 to be deposited apart from the substrate to the substrate with spoke
First material is deposited in firing angle α 1, and the material outlet of second evaporation source is at the surface d2 to be deposited apart from the substrate
Second material is deposited with radiation angle β to the substrate；
It is described second vapor deposition include:
The material outlet of the third evaporation source is at the surface d1 to be deposited apart from the substrate to the substrate with spoke
First material is deposited in firing angle α 2, and the material outlet of second evaporation source is at the surface d2 to be deposited apart from the substrate
Second material is deposited with radiation angle β to the substrate；
The irradiation angle 1 and the irradiation angle 2 are relative to perpendicular to first direction and excessively second evaporation source midpoint
Plane it is symmetrical, and perpendicular to first direction and the plane at second evaporation source midpoint excessively also by the radiation angle β point for pair
Two parts of title.
Further, first vapor deposition includes:
First evaporation source and second evaporation source of evaporation source described in every group are in the direction for being parallel to first direction
On, since first position, moved back and forth between first position and second；
It is described second vapor deposition include:
The third evaporation source and second evaporation source of evaporation source described in every group are in the direction for being parallel to first direction
On, since the second position, moved back and forth between the second position and first position.
Preferably, the first vapor deposition and second vapor deposition of carrying out includes: to carry out first vapor deposition shape on the first substrate
At vapor deposition layer, carries out described second and be vaporized on formation vapor deposition layer in the second substrate；
First evaporation source and second evaporation source that first vapor deposition includes: evaporation source described in every group are from first
Position starts, and i reciprocating motion is carried out between first position and second；
The third evaporation source and second evaporation source that second vapor deposition includes: evaporation source described in every group are from second
Position starts, and i reciprocating motion is carried out between the second position and first；
Wherein, i is greater than or equal to 1 positive integer.
Further, first vapor deposition includes: that first evaporation source of evaporation source described in every group and described second are steamed
Plating source moves to the second position on the direction for being parallel to first direction, from first position；
It is described second vapor deposition include: evaporation source described in every group the third evaporation source with second evaporation source parallel
In on the direction of first direction, first position is moved to from the second position.
Preferably, the first vapor deposition and second vapor deposition of carrying out includes: to carry out described first to be vaporized on shape on third substrate
At vapor deposition layer, carries out described second and be vaporized on formation vapor deposition layer on tetrabasal；
First vapor deposition includes: that first evaporation source of evaporation source described in every group and second evaporation source carry out m
The secondary single way motion from first position to the second position；
Second vapor deposition includes: that the third evaporation source of evaporation source described in every group and second evaporation source carry out m
The secondary single way motion from the second position to first position；
Wherein, m is the positive integer more than or equal to 1.
Preferably, the irradiation angle 1 and α 2 are 45 ° to 85 °, and the radiation angle β is 45 ° to 85 °；
The d1 is 200mm to 700mm, and the d2 is 200mm to 700mm.
Further, the evaporated device includes multiple groups evaporation source, and first evaporation source in each group evaporation source is parallel
A column are equidistantly arranged in second direction, second evaporation source in each group evaporation source is parallel to second direction and equidistantly arranges
Cheng Yilie is arranged, the third evaporation source in each group evaporation source is parallel to second direction and is equidistantly arranged in a column, and described first
Direction and the second direction are orthogonal.
Preferably, first material be organic light emitting diode device in structure sheaf material of main part, described second
Material is the dopant material of the structure sheaf in organic light emitting diode device.
Solving technical solution used by present invention problem is a kind of deposition system, including evaporated device and control are set
Standby, the evaporated device includes multiple groups evaporation source, and every group of evaporation source includes the first evaporation source, the second evaporation source, third evaporation source,
First evaporation source, the third evaporation source, for the first material to be deposited to substrate；
Second evaporation source, for the second material to be deposited to substrate；
The control equipment is deposited for controlling the evaporated device according to above-mentioned evaporation coating method.
Detailed description of the invention
Fig. 1 is the first evaporation source of the embodiment of the present invention and the schematic diagram that substrate is deposited in the second evaporation source；
Fig. 2 is the third evaporation source of the embodiment of the present invention and the schematic diagram that substrate is deposited in the second evaporation source；
One when substrate is deposited in the first evaporation source of evaporated device and the second evaporation source that Fig. 3 is the embodiment of the present invention
The schematic diagram in the optional vapor deposition path of kind；
Fig. 4 is schematic diagram of the evaporation source in first position of the evaporated device of the embodiment of the present invention；
Fig. 5 is schematic diagram of the evaporation source in the second position of the evaporated device of the embodiment of the present invention；
Fig. 6 is the C substrate of the embodiment of the present invention, the vapor deposition model of layer is deposited in a kind of three stratons on D substrate；
Another kind when substrate is deposited in the third evaporation source and the second evaporation source that Fig. 7 is the embodiment of the present invention can
The schematic diagram in choosing vapor deposition path；
Fig. 8 is the E substrate of the embodiment of the present invention, the vapor deposition model of layer is deposited in another three stratons on F substrate；
Wherein, appended drawing reference are as follows: 11, A substrate；12, B substrate；13, C substrate；14, E substrate；21, the first evaporation source；22,
Second evaporation source；23, third evaporation source.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
In the present invention, the first evaporation source, the second evaporation source, first, second, third in third evaporation source are used merely to
Distinguish three evaporation sources, to the structure of evaporation source there is no limit.
The first evaporation source, the second evaporation source, third evaporation source in attached drawing, also should not be construed evaporation source left and right directions
Limitation, just to facilitate description three evaporation sources working method.
First is used merely to refer to the arragement direction of the first evaporation source, the second evaporation source, third evaporation source in first direction.
One vapor deposition processing procedure refers to once feeding with the first evaporation source, the second evaporation source, third evaporation source or primary
Evaporation source is installed to rise, until it cannot be further continued for vapor deposition.For example, the second evaporation material is used up or the first evaporation source and
The material of three evaporation sources is all used up.
Embodiment 1:
As shown in Figures 1 to 8, the present embodiment provides a kind of evaporation coating methods, comprising: using at least one set of evaporation source
Evaporated device carries out, and every group of evaporation source includes the first evaporation source 21, the second evaporation source 22, third evaporation source 23, evaporation coating method packet
It includes:
In a vapor deposition processing procedure, the first vapor deposition and the second vapor deposition are carried out；
Wherein, the first vapor deposition includes closing third evaporation source 23, uses the first evaporation source 21 with first rate to substrate
The first material is deposited, uses the second evaporation source 22 that the second material is deposited to substrate with the second rate；Second vapor deposition includes, by first
Evaporation source 21 close, use third evaporation source 23 with first rate to substrate be deposited the first material, use the second evaporation source 22 with
The second material is deposited to substrate in second rate；And first rate is greater than the second rate.
Evaporated device may include one group of evaporation source or multiple groups evaporation source, and in a vapor deposition processing procedure, at least one set is steamed
First evaporation source 21, the third evaporation source 23 in plating source are all used to that the first material to be deposited.Therefore, the first material of evaporated device storage
Total amount is increased compared to the total amount for the first material that evaporated device in the related technology stores, and then is increased compared to the relevant technologies
Maximum continuous evaporating-plating time of one vapor deposition processing procedure.
Preferably, when carrying out continuous evaporating-plating to multiple substrates, multiple substrates can be carried out using the first vapor deposition first
Vapor deposition after the first material after store in the first evaporation source 21 is finished, is deposited other multiple substrates using the second vapor deposition.
The first evaporation source 21 is used continuously and substrate is deposited in the second evaporation source 22, the first material in the first evaporation source 21 can be made
The second material in material and the second evaporation source 22 is always maintained at the condition of high temperature, therefore avoids first in the first evaporation source 21
The second material in material and the second evaporation source 22 is again by the time loss and cost of low-temperature heat to high temperature.Similarly, may be used
To use the second vapor deposition that multiple substrates are deposited first, after the first material after store in third evaporation source 23 is finished, adopt
Other multiple substrates are deposited with the first vapor deposition.The first material stored in the first above-mentioned evaporation source 21 is finished can also be with
It is that the number of substrates for completing vapor deposition using the first vapor deposition has reached predetermined quantity, can also be and continuous steaming is carried out using the first vapor deposition
The time of plating has reached scheduled evaporation time.Here predetermined quantity, predetermined time can be specific according to evaporation process demand
Setting.
Optionally, the first material is the material of main part of the structure sheaf in organic light emitting diode device, and the second material is to have
The dopant material of structure sheaf in machine LED device.
The part-structure layer (such as luminescent layer) of organic light emitting diode device is being made of material of main part and dopant material,
Wherein the amount of material of main part is naturally larger than the amount of dopant material, therefore particularly suitable method of the invention.
Below by way of A substrate and B substrate be respectively adopted the first vapor deposition and second be deposited for, introduce A substrate
When using the first vapor deposition, a kind of preferred radiation angle of the material outlet of the material outlet of the first evaporation source 21 and the second evaporation source 22
With a kind of preferred distance on distance A substrate surface to be deposited.When introducing B substrate using the second vapor deposition, the material of third evaporation source 23
The one kind on a kind of preferred radiation angle of the material outlet of material outlet and the second evaporation source 22 and distance B substrate surface to be deposited is preferably
Distance.Certainly, more substrates are equally applicable the content.
As shown in Figure 1, A substrate 11 may include: using the first vapor deposition completion vapor deposition
The material outlet of first evaporation source 21 is at the surface d1 to be deposited apart from substrate to substrate with the vapor deposition of irradiation angle 1
First material, the material outlet of the second evaporation source 22 is at the surface d2 to be deposited apart from substrate to substrate with radiation angle β vapor deposition
Second material；
As shown in Fig. 2, B substrate 12 may include: using the second vapor deposition completion vapor deposition
The material outlet of third evaporation source 23 is at the surface d1 to be deposited apart from substrate to substrate with the vapor deposition of irradiation angle 2
First material, the material outlet of the second evaporation source 22 is at the surface d2 to be deposited apart from substrate to substrate with radiation angle β vapor deposition
Second material；
Irradiation angle 1 and irradiation angle 2 are symmetrical relative to the plane perpendicular to first direction and 22 midpoint of the second evaporation source excessively,
And also radiation angle β is divided for symmetrical two parts perpendicular to the plane of first direction and 22 midpoint of the second evaporation source excessively.
As illustrated in fig. 1 and 2, two angles in irradiation angle 1 and horizontal direction are angle 1-1 and angle 1-2, radiation angle β
It is angle 2-1 and angle 2-2 with two angles in horizontal direction, two angles in irradiation angle 2 and horizontal direction are angle
3-1 and angle 3-2, wherein α 1=α 2,1-1=3-1,2-1=2-2,1-2=3-2, the first evaporation source 21 and second is steamed as a result,
The vapor deposition that plating source 22 carries out, the vapor deposition carried out with third evaporation source 23 and the second evaporation source 22 is full symmetric.
Optionally, the first evaporation source 21, the second evaporation source 22, third evaporation source 23 can be used angle board and limit to substrate
The range being deposited on the material that the angular substrate evaporation material of great radiation namely angle board limitation are deposited out on substrate.
Preferably, irradiation angle 1 and α 2 are 45 ° to 85 °, and radiation angle β is 45 ° to 85 °；D1 is 200mm to 700mm, and d2 is
200mm to 700mm.It is further preferred that d1=d2.
When carrying out the first vapor deposition and the second vapor deposition, using above-mentioned preferred radiation angle and preferred distance, such first vapor deposition, the
Although the absolute profile for the evaporation material that two vapor depositions generate is different, the material outlet of the first evaporation source 21 and third evaporation source 23
Mutually symmetrical with, the material outlet of the first evaporation source 21 and third evaporation source 23 is with the mutually symmetrical with angular substrate vapor deposition first of radiation
Material, and when the first vapor deposition of progress and when carrying out the second vapor deposition, the material outlet of the second evaporation source 22 is apart from substrate table to be deposited
Face is equidistant, and the material outlet of the second evaporation source 22 is deposited second to substrate surface to be deposited perpendicular to substrate surface to be deposited
Material, therefore be conducive to improve the consistency of product.
Further, to form greater area of vapor deposition layer on substrate, the first vapor deposition can also include: the first evaporation source
21 and second evaporation source 22 carry out the straight reciprocating motion or the list that are parallel to first direction between the first position and the second position
First material, the second material are vaporized on substrate by Cheng Yundong during the motion.And second vapor deposition can also include: the
Three evaporation sources 23 and the second evaporation source 22 carry out the linear reciprocation for being parallel to first direction between the first position and the second position
First material, the second material, are vaporized on substrate by movement or single way motion during the motion.
Meanwhile the amount of evaporation material that evaporation source is issued to different directions has certain difference, therefore when using two steamings
It is when two kinds of materials are deposited in plating source, then different with respect to the ratio that two evaporation sources are in two kinds of materials in the vapor deposition layer of different location.And
When source movement is deposited, then layer is deposited along the different location of thickness, is really formed when opposite evaporation source is in different location
, therefore the ratio for steaming two kinds of materials at the different location of thickness of coating direction is also different.Therefore, design evaporation source is reasonably steamed
Plating path is important.
Several optional vapor deposition paths of the first evaporation source 21 and the second evaporation source 22 are introduced below by way of 6 pieces of substrates, and
Several optional vapor deposition paths of third evaporation source 23 and the second evaporation source 22.
Optionally, introduced below in a vapor deposition processing procedure, when C substrate is using the first vapor deposition, the first evaporation source 21 and the
When a kind of optional vapor deposition path of two evaporation sources 22 and D substrate are using the second vapor deposition, third evaporation source 23 and the second evaporation source
A kind of 22 optional vapor deposition path.Certainly, more substrates are equally applicable this method.
As shown in figure 3, the first evaporation source 21 and the second evaporation source 22 are from first position (leftward position in figure) and second
It sets and carries out i back and forth movement between (right positions in figure), form vapor deposition layer on C substrate 13, each time back and forth movement process
The vapor deposition of straton vapor deposition layer in the middle vapor deposition layer for completing C substrate.
Third evaporation source 23 and the second evaporation source 22 carry out carrying out j round-trip fortune between first position and the second position
It is dynamic, vapor deposition layer is formed on D substrate, layer is deposited in the straton completed during back and forth movement in the vapor deposition layer of D substrate each time
Vapor deposition.
When substrate carries out the first vapor deposition, the first evaporation source 21 combination of the first evaporation source 21 and the second evaporation source 22 composition；
When substrate carries out the second vapor deposition, the first evaporation source 21 combination of third evaporation source 23 and the second evaporation source 22 composition.C substrate uses
When the first vapor deposition, the combination of the first evaporation source 21 uses above-mentioned preferred vapor deposition angle and preferred distance；When D substrate is using the second vapor deposition,
The combination of second evaporation source 22 uses above-mentioned preferred vapor deposition angle and preferred distance.Corresponding sub- vapor deposition layer is on C substrate and D substrate
The combination of first evaporation source 21 combines what counter motion each other was formed in the process with the second evaporation source 22.If the first evaporation source as a result,
The orientation of the first material to the second material is identical as the direction of motion in 21 combinations, then the first material in the combination of the second evaporation source 22
Expect the orientation to the second material also must be the same with the direction of motion；If first material is to second in the combination of the first evaporation source 21
The orientation of material with the direction of motion on the contrary, then the second evaporation source 22 combine in the first material to the second material orientation
It is also inevitable opposite with the direction of motion.Therefore, C substrate is identical with the vapor deposition model of sub- vapor deposition layer corresponding on D substrate, here with
The son vapor deposition layer for being directly vaporized on the surface of C substrate and D substrate is that layer is deposited in the first straton, and vapor deposition model here refers to steaming
First material and the second material proportion model at the different location of coating in a thickness direction.
As shown in fig. 6, the vapor deposition model schematic of layer is deposited in 3 stratons on C substrate and D substrate, a circular arc is represented in figure
Layer is deposited in one straton, and circular arc left part is C substrate, the content of the second material in layer is deposited in D substrate, and right side is the first material
Content.
Certainly, number i, j is positive integer, and number i, j can be unequal, but it is preferable that the two is equal, i.e. j is exactly i, this
It is a specifically to set according to demand.
The layer that is deposited with the first obtained substrate of vapor deposition and the substrate obtained with the second vapor deposition may be implemented with upper type
It is identical that model is deposited, to guarantee the consistency of properties of product.
Optionally, E substrate carries out the first vapor deposition and F substrate carries out the optional vapor deposition path of another kind of the second vapor deposition.Such as Fig. 7
Shown, third evaporation source 23 and the second evaporation source 22 first can also then be deposited with first position (leftward position in figure) for starting point
Source 21 and the second evaporation source 22 are with the second position (side position again in figure) for starting point.Son vapor deposition layer on such E substrate and F substrate
Vapor deposition model can change, and the vapor deposition model schematic of 3 stratons vapor deposition layer is as shown in Figure 8 on E substrate and F substrate.One in figure
A circular arc represents straton vapor deposition layer, and circular arc left part is E substrate, the content of the second material in layer is deposited in F substrate, and right side is
The content of first material.Based on reason same as described above, the vapor deposition model of the vapor deposition layer of E substrate and F substrate is identical, but
It is because E substrate and the first straton of F substrate vapor deposition layer are past as the carry out of starting point using first position in the combination of the second evaporation source 22
What multiple operation was formed, therefore, the vapor deposition model of the vapor deposition layer of E substrate and F substrate is different from the vapor deposition layer of C substrate and D substrate
Model is deposited.
Optionally, as shown in Figures 4 and 5, evaporated device includes multiple groups evaporation source, and each group of evaporation source includes in a first direction
On the first evaporation source 21, the second evaporation source 22, third evaporation source 23 that are arranged in a row.First evaporation source 21 and the second evaporation source 22
The distance between be equal to the material outlet of the distance between the second evaporation source 22 and third evaporation source 23 namely the first evaporation source 21
With material outlet and the third vapor deposition of the material outlet of the second evaporation source 22 distance in a first direction and the second evaporation source 22
The material outlet in source 23 being equidistant in a first direction.
The first evaporation source 21 in each group evaporation source is parallel to second direction and is equidistantly arranged in a column, is as deposited first
The line source of evaporation source 21；The second evaporation source 22 in each group evaporation source is parallel to second direction and is equidistantly arranged in a column, as
The line source of second evaporation source 22；Third evaporation source 23 in each group evaporation source is parallel to second direction and is equidistantly arranged in a column,
The as line source of third evaporation source 23；First direction X and second direction Y are orthogonal.Correspondingly, 21 line source of the first evaporation source,
Second evaporation source, 22 line source, 23 line source of third evaporation source can form greater area of vapor deposition layer on substrate.
Optionally, introduced below in a vapor deposition processing procedure, in a vapor deposition processing procedure, when G substrate is using the first vapor deposition,
When the optional vapor deposition path of the another kind of first evaporation source 21 and the second evaporation source 22 and H substrate are using the second vapor deposition, third is steamed
A kind of optional vapor deposition path in plating source 23 and the second evaporation source 22.Certainly, more substrates are equally applicable this method.
First evaporation source 21 and the second evaporation source 22 carry out m single way motion from first position to the second position, first
Layer is deposited in the straton formed in G substrate vapor deposition layer in the single way motion each time of evaporation source 21 and the second evaporation source 22；
Third evaporation source 23 and the second evaporation source 22 carry out n times single way motion from the second position to first position, first
Layer is deposited in the straton formed in H substrate vapor deposition layer in the single way motion each time of evaporation source 21 and the second evaporation source 22.
When G substrate is using the first vapor deposition, the first evaporation source 21 and the second evaporation source 22 are using above-mentioned first evaporation source 21, the
The preferred vapor deposition angle of two evaporation sources 22, when H substrate is using the second vapor deposition, third evaporation source 23 and the second evaporation source 22 are using above-mentioned
The preferred vapor deposition angle of third evaporation source 23, the second evaporation source 22.Son vapor deposition layer on G substrate and H substrate in the corresponding number of plies
Vapor deposition model it is identical.
Certainly, number m, n is positive integer, and number m, n can be equal or unequal, this can be specific according to demand
Setting.
Based on reason same as described above, the vapor deposition model of the vapor deposition layer of G substrate and H substrate is identical.
Optionally, introduced below in a vapor deposition processing procedure, the vapor deposition layer middle part molecule vapor deposition layer use of I substrate, J substrate
First vapor deposition layer is formed, and another part is deposited layer and is formed using the second vapor deposition.First evaporation source 21 and the second evaporation source 22
Another optional vapor deposition path and the optional vapor deposition path of another kind of three evaporation sources and the second evaporation source 22.Certainly, more
Substrate is equally applicable this method.Illustrate so that the vapor deposition layer of I substrate, J substrate all includes 3 stratons vapor deposition layer as an example.
Optionally, in a vapor deposition processing procedure, I substrate, J substrate vapor deposition layer in the middle part of molecule vapor deposition layer using the first vapor deposition
Layer is formed, and another part is deposited layer and is formed using the second vapor deposition.In order to realize corresponding sub- vapor deposition layer on I substrate and J substrate
There is identical vapor deposition model, when I substrate and J substrate are deposited, the first evaporation source 21, the second evaporation source 22, third evaporation source 23 are adopted
Vapor deposition radiation angle can use above-mentioned preferred vapor deposition radiation angle.Vapor deposition layer with I substrate, J substrate all includes 3 stratons vapor deposition
Illustrate for layer.The optional vapor deposition path of the another kind of first evaporation source 21 and the second evaporation source 22 and three evaporation sources and second
The optional vapor deposition path of another kind of evaporation source 22.
In the single way motion of first evaporation source 21 and the second evaporation source 22 from first position to the second position, in I base
Layer is deposited in the first straton formed in vapor deposition layer on plate.
In the single way motion of first evaporation source 21 and the second evaporation source 22 from first position to the second position, in I base
Layer is deposited in the second straton formed in vapor deposition layer on plate.
In the single way motion of third evaporation source 23 and the second evaporation source 22 from the second position to first position, in I base
Layer is deposited in the third straton formed in vapor deposition layer on plate.
In the single way motion of third evaporation source 23 and the second evaporation source 22 from the second position to first position, in J base
Layer is deposited in the first straton formed in vapor deposition layer on plate.
In the single way motion of third evaporation source 23 and the second evaporation source 22 from the second position to first position, in J base
Layer is deposited in the second straton formed in vapor deposition layer on plate.
First evaporation source 21 and the second evaporation source 22 from first position to the second position, a single way motion in, in J base
Layer is deposited in the third straton formed in vapor deposition layer on plate.
Based on reason same as described above, the vapor deposition model of the vapor deposition layer of I substrate and J substrate is identical.
Further, can be by adjusting when carrying out the first vapor deposition: the radiation of the first material be deposited in the first evaporation source 21
Angle, the second evaporation source 22 be deposited the second material radiation angle and the first evaporation source 21, the second evaporation source 22 material outlet away from
With a distance from the surface to be deposited of substrate so that the boundary that is deposited on substrate of the first material that the first evaporation source 21 is deposited out and
The overlapping margins that the second material that second evaporation source 22 is deposited out deposits on substrate.When carrying out the second vapor deposition, third evaporation source
23 vapor deposition and the second evaporation source 22 can according to carry out first be deposited when the first evaporation source 21 and the second evaporation source 22 setting into
The corresponding adjustment of row.
Embodiment 2:
The present embodiment provides a kind of deposition system, including evaporated device and control equipment, evaporated device includes multiple groups vapor deposition
Source, every group of evaporation source include the first evaporation source, the second evaporation source, third evaporation source.
First evaporation source, third evaporation source, for the first material to be deposited to substrate.
Second evaporation source, for the second material to be deposited to substrate.
Equipment is controlled, is deposited for controlling the evaporation coating method of evaporated device in accordance with the above-mentioned embodiment 1.
Further, the first evaporation source and the second evaporation source and third evaporation source can pass through respective angle board tune respectively
The radiation angle of the material of whole vapor deposition.For example, in line source evaporation process angle board (straight panel) can be increased to limit in line source two sides
The material that each evaporation source is deposited out is deposited on the range of substrate, to guarantee evaporating quality.It is steamed together in two or three of material
In the case where plating, the radiation angle of material can be limited by angle board, realize that material is mixed in a certain ratio.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of evaporation coating method, which is characterized in that using the evaporated device progress at least one set of evaporation source, every group of evaporation source
Including the first evaporation source, the second evaporation source, third evaporation source, the evaporation coating method includes:
In a vapor deposition processing procedure, the first vapor deposition and the second vapor deposition are carried out；
Wherein, it is described first vapor deposition include, by the third evaporation source close, use first evaporation source with first rate to
The first material is deposited in substrate, uses second evaporation source that the second material is deposited to the substrate with the second rate；Described second
Vapor deposition includes closing first evaporation source, and the third evaporation source is used to be deposited first to the substrate with first rate
Material uses second evaporation source that the second material is deposited to the substrate with the second rate；And the first rate is greater than institute
State the second rate.
2. evaporation coating method according to claim 1, which is characterized in that first evaporation source of evaporation source described in every group,
Second evaporation source, third evaporation source are successively in line along first direction, first evaporation source and second evaporation source it
Between distance be equal to the distance between second evaporation source and the third evaporation source；
It is described first vapor deposition include:
The material outlet of first evaporation source is at the surface d1 to be deposited apart from the substrate to the substrate with irradiation angle
1 vapor deposition first material, the material outlet of second evaporation source is at the surface d2 to be deposited apart from the substrate to institute
It states substrate and second material is deposited with radiation angle β；
It is described second vapor deposition include:
The material outlet of the third evaporation source is at the surface d1 to be deposited apart from the substrate to the substrate with irradiation angle
2 vapor deposition first materials, the material outlet of second evaporation source is at the surface d2 to be deposited apart from the substrate to institute
It states substrate and second material is deposited with radiation angle β；
The irradiation angle 1 and the irradiation angle 2 are flat relative to perpendicular to first direction and excessively second evaporation source midpoint
Face is symmetrical, and perpendicular to first direction and the radiation angle β point is also symmetrical by the plane at second evaporation source midpoint excessively
Two parts.
3. evaporation coating method according to claim 2, which is characterized in that it is described first vapor deposition include:
First evaporation source and second evaporation source of evaporation source described in every group on the direction for being parallel to first direction, from
First position starts, and moves back and forth between first position and second；
It is described second vapor deposition include:
The third evaporation source and second evaporation source of evaporation source described in every group on the direction for being parallel to first direction, from
The second position starts, and moves back and forth between the second position and first position.
4. evaporation coating method according to claim 3, which is characterized in that first vapor deposition of progress and the second vapor deposition include:
It carries out first vapor deposition and forms vapor deposition layer on the first substrate, carry out described second and be vaporized on formation vapor deposition in the second substrate
Layer；
First evaporation source and second evaporation source that first vapor deposition includes: evaporation source described in every group are from first position
Start, i reciprocating motion is carried out between first position and second；
The third evaporation source and second evaporation source that second vapor deposition includes: evaporation source described in every group are from the second position
Start, i reciprocating motion is carried out between the second position and first；
Wherein, i is greater than or equal to 1 positive integer.
5. evaporation coating method according to claim 2, which is characterized in that
First vapor deposition includes: that first evaporation source of evaporation source described in every group and second evaporation source are being parallel to the
On the direction in one direction, the second position is moved to from first position；
Second vapor deposition includes: that the third evaporation source of evaporation source described in every group and second evaporation source are being parallel to the
On the direction in one direction, first position is moved to from the second position.
6. evaporation coating method according to claim 5, which is characterized in that first vapor deposition of progress and the second vapor deposition include:
It carries out described first and is vaporized on formation vapor deposition layer on third substrate, carry out described second and be vaporized on formation vapor deposition on tetrabasal
Layer；
It is described first vapor deposition include: evaporation source described in every group first evaporation source and second evaporation source carry out m times from
Single way motion of the first position to the second position；
It is described second vapor deposition include: evaporation source described in every group the third evaporation source and second evaporation source carry out m times from
Single way motion of the second position to first position；
Wherein, m is the positive integer more than or equal to 1.
7. evaporation coating method according to claim 2, which is characterized in that the irradiation angle 1 and α 2 are 45 ° to 85 °, institute
Stating radiation angle β is 45 ° to 85 °；
The d1 is 200mm to 700mm, and the d2 is 200mm to 700mm.
8. evaporation coating method according to claim 1, which is characterized in that the evaporated device includes multiple groups evaporation source, each group
First evaporation source in evaporation source is parallel to second direction and is equidistantly arranged in a column, and described second in each group evaporation source
Evaporation source is parallel to second direction and is equidistantly arranged in a column, and the third evaporation source in each group evaporation source is parallel to second party
To equidistantly a column are arranged in, the first direction and the second direction are orthogonal.
9. evaporation coating method according to claim 1, which is characterized in that first material is organic light emitting diode device
In structure sheaf material of main part, second material be organic light emitting diode device in structure sheaf dopant material.
10. a kind of deposition system, including evaporated device and control equipment, the evaporated device includes multiple groups evaporation source, every group of steaming
Plating source includes the first evaporation source, the second evaporation source, third evaporation source, which is characterized in that
First evaporation source, the third evaporation source, for the first material to be deposited to substrate；
Second evaporation source, for the second material to be deposited to substrate；
The control equipment is steamed for controlling the evaporated device according to any evaporation coating method of claim 1 to 9
Plating.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116083858A (en) * | 2023-01-28 | 2023-05-09 | 京东方科技集团股份有限公司 | Vapor deposition device, vapor deposition method, organic light emitting diode device, and display panel |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8724317D0 (en) * | 1987-10-16 | 1987-11-18 | Philips Electronic Associated | Forming defect mixed oxide |
| CN1723741A (en) * | 2002-12-12 | 2006-01-18 | 株式会社半导体能源研究所 | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
| CN1953065A (en) * | 2005-10-18 | 2007-04-25 | 日立环球储存科技荷兰有限公司 | Apparatus, method and system for fabricating servo patterns on high density patterned media |
| CN101294271A (en) * | 2007-04-26 | 2008-10-29 | 索尼株式会社 | Deposition apparatus |
| CN102369787A (en) * | 2009-03-31 | 2012-03-07 | 东京毅力科创株式会社 | Film forming device, film forming method, and organic EL element |
| CN104134760A (en) * | 2013-05-03 | 2014-11-05 | 三星显示有限公司 | Deposition apparatus, organic light-emitting display apparatus and manufacturing method thereof |
| KR20150007743A (en) * | 2013-07-12 | 2015-01-21 | 삼성디스플레이 주식회사 | Apparatus for thin layer deposition |
| KR20150113742A (en) * | 2014-03-31 | 2015-10-08 | 주식회사 선익시스템 | Evaporation source and deposition apparatus including the same |
| CN207596943U (en) * | 2017-11-09 | 2018-07-10 | 信利（惠州）智能显示有限公司 | A kind of doping evaporation source nozzle structure |
| KR20180093207A (en) * | 2017-02-10 | 2018-08-21 | 주식회사 선익시스템 | Deposition Chamber Having Structure for Controlling Angle of Injection to Prevent Mask Shadow |
| CN108677147A (en) * | 2018-06-13 | 2018-10-19 | 京东方科技集团股份有限公司 | Evaporation coating device and evaporation coating method |
-
2019
- 2019-01-03 CN CN201910005585.9A patent/CN109609909B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8724317D0 (en) * | 1987-10-16 | 1987-11-18 | Philips Electronic Associated | Forming defect mixed oxide |
| CN1723741A (en) * | 2002-12-12 | 2006-01-18 | 株式会社半导体能源研究所 | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
| CN1953065A (en) * | 2005-10-18 | 2007-04-25 | 日立环球储存科技荷兰有限公司 | Apparatus, method and system for fabricating servo patterns on high density patterned media |
| CN101294271A (en) * | 2007-04-26 | 2008-10-29 | 索尼株式会社 | Deposition apparatus |
| CN102369787A (en) * | 2009-03-31 | 2012-03-07 | 东京毅力科创株式会社 | Film forming device, film forming method, and organic EL element |
| CN104134760A (en) * | 2013-05-03 | 2014-11-05 | 三星显示有限公司 | Deposition apparatus, organic light-emitting display apparatus and manufacturing method thereof |
| KR20150007743A (en) * | 2013-07-12 | 2015-01-21 | 삼성디스플레이 주식회사 | Apparatus for thin layer deposition |
| KR20150113742A (en) * | 2014-03-31 | 2015-10-08 | 주식회사 선익시스템 | Evaporation source and deposition apparatus including the same |
| KR20180093207A (en) * | 2017-02-10 | 2018-08-21 | 주식회사 선익시스템 | Deposition Chamber Having Structure for Controlling Angle of Injection to Prevent Mask Shadow |
| CN207596943U (en) * | 2017-11-09 | 2018-07-10 | 信利（惠州）智能显示有限公司 | A kind of doping evaporation source nozzle structure |
| CN108677147A (en) * | 2018-06-13 | 2018-10-19 | 京东方科技集团股份有限公司 | Evaporation coating device and evaporation coating method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116083858A (en) * | 2023-01-28 | 2023-05-09 | 京东方科技集团股份有限公司 | Vapor deposition device, vapor deposition method, organic light emitting diode device, and display panel |
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