WO2005109489A1 - Procédé de neutralisation de pièce d’usinage et appareil pour ce procede - Google Patents

Procédé de neutralisation de pièce d’usinage et appareil pour ce procede Download PDF

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Publication number
WO2005109489A1
WO2005109489A1 PCT/JP2005/008228 JP2005008228W WO2005109489A1 WO 2005109489 A1 WO2005109489 A1 WO 2005109489A1 JP 2005008228 W JP2005008228 W JP 2005008228W WO 2005109489 A1 WO2005109489 A1 WO 2005109489A1
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WO
WIPO (PCT)
Prior art keywords
work
workpiece
charge
substrate
adhesive
Prior art date
Application number
PCT/JP2005/008228
Other languages
English (en)
Japanese (ja)
Inventor
Yoshikazu Ohtani
Noriyuki Takefushi
Yasuyuki Koga
Original Assignee
Shin-Etsu Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Engineering Co., Ltd. filed Critical Shin-Etsu Engineering Co., Ltd.
Priority to JP2006515328A priority Critical patent/JPWO2005109489A1/ja
Publication of WO2005109489A1 publication Critical patent/WO2005109489A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention relates to a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), which is made of a glass substrate such as TFT glass or CF glass, or a synthetic resin substrate.
  • a substrate assembling apparatus including a substrate bonding machine for detachably holding and bonding a work (object to be processed) by electrostatic adsorption, adhesion, vacuum adsorption or other mechanical holding means, or a substrate It is used for a substrate transfer device to transfer, or a semiconductor manufacturing device that holds and processes a workpiece such as a silicon wafer in a removable manner, and removes the workpiece consisting of these insulators, semiconductors, or conductors from the workpiece holder.
  • the present invention relates to a work charge removing method for removing charges (static charge) remaining (charged) on a work side by releasing (separating) and a work charge removing device used therefor.
  • the present invention relates to a method for removing electricity from a workpiece, the method for removing electricity from a workpiece that is detachably held by a workpiece holder, and to a workpiece neutralization device that discharges a workpiece from a workpiece that is detachably held by the workpiece holder.
  • a pair of upper and lower surface plates is provided so as to be mutually displaceable in a vacuum chamber.
  • One of the pair of glass substrates is held by an electrostatic chuck provided on at least one of the platens, the other platen is held by the other platen, the two substrates are aligned and pressed to be pressure-bonded.
  • a pattern for removing static electricity is formed in a loop shape on at least one of the substrates to perform static elimination of the substrate held in the electrostatic chuck, or
  • the charge remaining on the insulating substrate is removed by removing the charge of the substrate after completion of the bonding process with an ionizer or the like to prevent electrostatic breakdown (for example, patent documents) Reference 1).
  • an object to be treated at least the back surface of which is a conductor or a semiconductor force
  • the charge supplying portion also supplies the electric charge opposite to the electric charge generated on the back surface of the object to be processed.
  • the charge remaining on the back side of the body is quickly cancelled, which weakens the electrostatic adsorption force acting between the electrostatic chuck and the object (see, for example, Patent Document 2).
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2000-66163 (page 4-7, FIG. 3)
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2004-40046 (Page 3-6, FIG. 1-3)
  • Patent Document 1 in the case of Patent Document 1, a loop-like pattern is arranged to surround the workpiece (glass substrate) before the substrate is crimped in such a conventional workpiece static elimination method and workpiece static elimination device.
  • a loop-like pattern is arranged to surround the workpiece (glass substrate) before the substrate is crimped in such a conventional workpiece static elimination method and workpiece static elimination device.
  • it is not suitable for removing charges from a large work such as a large liquid crystal display device.
  • a ionizer is used as a countermeasure for removing electricity after pressure bonding of the substrate, the ionized air is jetted to discharge the surface, and the flow of the air flow is changed to disfavor dust, for example, the substrate bonding process of liquid crystal display etc.
  • a vacuum closed space such as a vacuum chamber
  • a protective wall that would not harm the human body was required.
  • Patent Document 2 since the work is discharged by the injection of the reverse charge through the lift pins, the work can only be discharged with a conductive material such as a conductor or a semiconductor, and the work becomes a liquid crystal display.
  • a conductive material such as a conductor or a semiconductor
  • an insulator such as a TFT glass substrate or CF glass substrate to be used
  • charge diffusion does not take place, only the contact portion of the elevating pins can be eliminated, and the surface can not be eliminated. Since the direction of voltage application is limited to one direction, there has been a problem that only positive or negative charge can basically be eliminated.
  • the invention according to claim 1 relates to any type of insulator, semiconductor or conductor. It is an object of the present invention to provide a work static elimination method which is capable of removing electricity without any change in air flow and without restriction on the installation location.
  • the invention described in claim 2 aims at providing the electrostatic chuck itself with a charge removing function.
  • the invention according to claim 3 aims at positively and easily discharging the bonded substrate.
  • the invention according to claim 4 is to provide a work static eliminating device capable of removing electricity without any change in air flow and without restriction on the installation place, regardless of the work of any material regardless of insulator or semiconductor 'conductor. Purpose.
  • the invention according to claim 5 is, in addition to the object of the invention according to claim 4, the object is to make the adhesive chuck itself have a charge removing function.
  • the invention according to claim 1 of the present invention is characterized in that the work holder is provided with a conductor insulated from the surroundings, and the work is separated from the surface of the work holder in the air or The voltage of the conductor is varied in a predetermined low vacuum to induce an electric field in the vicinity of the work to neutralize the charge remaining on the work.
  • the invention according to claim 2 is the configuration according to the invention according to claim 1, wherein the work holder is a bipolar electrostatic chuck, and the configuration is such that application is performed by changing two voltages of the electrostatic chuck. It is characterized by the addition.
  • the work processing may be carried out by electrostatically attracting and holding two substrates made of an insulator as a work by an electrostatic chuck. It is characterized in that a configuration to be pasted is added.
  • the work holding body is provided with a plate-like conductor insulated from the surroundings, and a peeling means for forming a gap between the surface of the work holding body and the work is provided.
  • the invention according to claim 5 is the structure according to claim 4, wherein the work holding body is an adhesion chuck for holding the work in an adhesive manner by means of an adhesive material. It is characterized in that a configuration in which three or more conductors are laid or buried is added.
  • the invention according to claim 1 is characterized in that the surface force of the work holding body fluctuates the voltage of the conductor provided on the work holding body in the air separated from the work or in a predetermined low vacuum.
  • part of the atmosphere gas such as air is instantaneously ionized and ionized in this electric field part, and they neutralize the charge remaining on the work.
  • the workpiece is an insulator such as a TFT glass substrate or a CF glass substrate used for liquid crystal display, compared to the conventional workpiece discharge method in which the workpiece is discharged by reverse charge injection through the lift pins.
  • the charge can be eliminated without regard to the direction of voltage application.
  • the voltage is applied by fluctuating two voltages of the bipolar electrostatic chuck as the workpiece holder. Charge is removed.
  • the electrostatic chuck itself can be equipped with the charge removal function.
  • the third aspect of the present invention in addition to the effects of the first aspect or the second aspect of the present invention, it is also possible to obtain an insulating material as well as two sheets. It is possible to carry out static elimination continuously after the substrate bonding operation, in which the substrates are held by holding them electrostatically by the electrostatic chuck.
  • a gap is formed between the surface of the work holding body and the work by the peeling means, and the voltage of the plate-like conductor provided on the work holding body is varied.
  • the workpiece is an insulator such as a TFT glass substrate or a CF glass substrate used for a liquid crystal display
  • a conventional workpiece static elimination device that neutralizes the workpiece by injecting reverse charge through the elevating pins, In the case where the entire surface can be discharged, or in the case where the charge train is reversed, ie, whether the work is positively or negatively charged, the charge can be eliminated without regard to the direction of voltage application.
  • the invention of claim 5 is characterized in that the adhesion chuck is formed by laying or embedding at least two or more electric conductors on the adhesion chuck as a work holder. Charge is removed.
  • the adhesive chuck itself can be equipped with the charge removal function.
  • a substrate also serving as an insulator force such as a liquid crystal display (LCD) panel may be electrostatically attracted, adhesively, vacuum attracted, or other mechanical.
  • LCD liquid crystal display
  • the work holding members 1 and 1 are attached to the opposing surfaces of the platens A and B arranged in pairs at the top and bottom as shown in FIGS. 1 to 8, respectively.
  • a closed space C which can hold two substrates W, W in one and can be opened and closed vertically between them by these close movements is partitioned to surround the upper and lower substrates w, W, and the closed space C is predetermined After the upper and lower platens A and B are adjusted relative to the XY 0 (horizontal) direction, the upper and lower substrates W and W are aligned with each other.
  • one or both of the workpiece holders 1 and 1 attached to the upper and lower surface plates A and B are equipped with the workpiece charge-removing apparatus of the present invention, and workpiece removal is performed after the processing of the workpiece.
  • the work charge removing apparatus of the present invention lays or embeds two or more conductors la and lb insulated from the surroundings in the work holder 1 respectively, and a high voltage is applied between the conductors la and lb.
  • the high voltage power supply 2 to be applied is connected, and the high voltage power supply 2 is connected to the ground and supplied to the conductors la and lb by the built-in control circuit etc. when the work processing is completed.
  • the voltage is varied and a rectangular wave voltage is repeatedly applied.
  • the work holding body 1 is provided with peeling means 3 for forming a gap S between the surface lc thereof and the back surface W1 of the work W, and the work treatment from the surface lc by the operation of the peeling means 3
  • An alternating electric field is induced in the vicinity of or around the surface of the work holding body 1 by applying an alternating high voltage to the conductors la and lb in the air or in a predetermined low vacuum while releasing the substrate W after the latter. Neutralize the charge remaining on the workpiece W and discharge it.
  • the work holder 1 shown in FIGS. 1 (a) and (b) and FIG. 2 is an electrostatic chuck that holds a glass substrate as a work W by electrostatic adsorption.
  • the case where charge removal is performed at the same time as or immediately after releasing these substrates W, W from the surface lc of the electrostatic chuck 1 by lift pins provided as the peeling means 3 It is.
  • At least the electrostatic chuck 1 of the lower surface plate B is a bipolar electrostatic chuck in which a comb-like internal electrode is embedded as the conductors la and lb.
  • a high voltage is applied from the high voltage power supply 2 between the electrodes la and lb to adsorb both upper and lower substrates W, W or only the lower substrate W, and after bonding both substrates W, application during the adsorption Repeatedly reversing the polarity of the voltage from the previous state.
  • the peeling means 3 is used when receiving the substrate transfer robot (not shown) force upper and lower substrates W, W and transferring them to the electrostatic chucks 1, 1 of the upper and lower surface plates A, B.
  • the lift pins, at least the tips of which are in contact with the upper and lower substrates W, W, are formed of an insulating material.
  • the lift pins 3 move the electrostatic chucks 1 and 1 in the Z (up and down) direction and are disposed in a plurality by themselves, and a plurality of upper and lower substrates W and W are attracted and held by the substrate transfer robot.
  • the back side of the back side is resorbed and transferred to the electrostatic chuck 1, 1 and after work processing, the bonded substrates W, W are pushed up from the surface lc of the electrostatic chuck 1 of the lower surface plate B, Operation control is performed so as to form a slight gap S of, for example, about 2 to 3 mm with the back surface W1 of the substrate W.
  • the electrostatic chucks 1 and 1 are installed parallel to the opposing surfaces of the upper and lower surface plates A and B via metal pedestals 4 and 4 such as metals such as aluminum, ceramics, and plastics. It is done.
  • suction and suction means 5 and 5 to these electrostatic chucks 1 and 1 in order to assist the adsorption and retention of the substrate W in the atmosphere, if necessary.
  • suction and suction means 5 and 5 also serve as an air passage that penetrates the electrostatic chucks 1 and 1 to communicate an intake source (not shown) such as a vacuum pump compressor or the like.
  • an intake source such as a vacuum pump compressor or the like.
  • a gas such as nitrogen gas or air toward the back surface Wl, Wl.
  • Both substrates W and W on which the above-mentioned bonding process is completed are detached from the electrostatic chuck 1 of the lower surface plate B and carried out of the closed space C. Static electricity (charge) remains on W and W sides.
  • the surface lc of the workpiece W such as the electrostatic chuck 1 is peeled off from the surface of the workpiece W at the moment of peeling from the state where the glass W is attached to the surface lc.
  • a peeling charge occurs in which charges corresponding to the difference in the charge series between the material of the workpiece and the material of the work W accumulate on the surface of the work W.
  • the peeling distance between the surface 1c and the work W is short, the charging voltage is low, so that it is difficult for discharge to occur, for example, between the metal pedestal supporting the electrostatic chuck 1 and the like.
  • the peeling distance becomes large, a very high voltage is generated, and a discharge occurs with a conductive material such as a metal pedestal.
  • the electrostatic charge (charge) varies depending on the size of the work W and the processing conditions, and the voltage may reach 20 KV or more at the ground voltage, and when the accumulated charge is discharged, it is formed on the work W In some cases, devices such as TFT elements are destroyed.
  • the upper and lower plates A and B are separated in the Z (upper and lower) direction, and the peeling means 3
  • the lift pins start operating, and the bonded substrates W and W are separated by the surface lc force of the electrostatic chuck 1 of the lower platen B, and a slight amount of, for example, about 2 to 3 mm between the lower substrate W and the back surface W1. Form a gap S.
  • the surroundings of the substrates W and W bonded to each other are in the air or in a low vacuum of 100 Pa or more. Under this atmosphere, the two electrostatic chucks 1 of the lower surface plate B are used. A high voltage is applied to the comb-shaped internal electrodes la and lb.
  • the clearance between the surface lc of the bipolar electrostatic chuck 1 of the lower platen B and the back surface W1 of the lower substrate W was about 2 mm by the lift pins of the peeling means 3 and the applied voltage was ⁇ 2500 V.
  • the withstand voltage of the lower substrate W decreased to about 1/3 as shown in FIG. 3 and further decreased to about 1/3 voltage each time it was performed.
  • the charging voltage could be extremely lowered in a short time.
  • the work W is not limited to an insulator such as a glass substrate used for a liquid crystal display, and even if it is a conductive substance such as a conductor or a semiconductor, it is positively discharged and formed. Can be lowered to a voltage that does not affect the
  • the structure of the bipolar electrostatic chuck is not limited to the illustrated shape.
  • other structures such as a fan-like shape may be used instead of the comb-shaped internal electrodes la and lb, for example. Also good. Also in this case, the same effects as the above-described effects can be obtained.
  • the peeling means 3 is not limited to the lift pins, and the work W after the work processing may be separated from the surface lc of the work holding body 1 by another method to form a clearance S between the two. Also in this case, the same effects as the above-described effects can be obtained.
  • a substrate bonding machine which removes both substrates W, W, The invention is not limited thereto, and a substrate bonding machine may be used to bond the upper and lower substrates W, W in the atmosphere.
  • the upper substrate W is forcibly peeled away from the surface lc of the workpiece holding member (electrostatic chuck) 1 of the upper surface plate A by the peeling means 3 and substantially simultaneously according to the timing.
  • the work holder 1 is an adhesive chuck for holding a glass substrate as the work W by adhesion of an adhesive Id as shown in FIGS. 4 to 6, and these upper and lower surface plates A And B.
  • the adhesive chucks 1 and 1 at least the adhesive chuck 1 of the lower surface plate B is equipped with the workpiece charge eliminator of the present invention, and both substrates W bonded to each other from the surface lc of the adhesive chuck 1 by the lift pins of the peeling means 3
  • the configuration in which charge removal is performed simultaneously with or immediately after releasing G., W is different from the first embodiment shown in FIGS. It is the same as 1.
  • the adhesive chuck 1 includes an adhesive Id which is adhesively held in opposition to the back surface W1 of the substrate W, and a deformed film le which can be deformed in a direction intersecting the surfaces of the upper and lower surface plates A and B.
  • the adhesion surface force of the adhesive Id is brought into contact with the substrate W by adhesion deformation of the adhesive film Id due to the appearance deformation of the deformed film le, and the adhesion surface force of the adhesive Id is also free of the substrate W by forcibly pulling them apart. It is peeled without any reason.
  • the above-mentioned adhesive Id is, for example, a pressure-sensitive adhesive sheet that also has adhesive material strength such as silicone, acrylic, and fluorine, and the area of the adhesive surface is the range where the upper substrate W has adhesive strength that can be suspended. It is desirable to set a small size inside and attach the adhesive Id itself so that it can be easily replaced.
  • the deformable film le is, for example, an elastically deformable diaphragm which is a synthetic resin such as rubber or engineering plastic or the like, or an elastic material other than that, and the upper and lower surface plates A, B or the pedestals 4, 4 For example, it is partially adhered to the surface of the surface by welding, such as adhesive or electron beam welding, or is partially gripped by a fixing means such as a screw.
  • a plurality of or a single through hole or a recess is provided at a position facing the deformable film le.
  • an intake source such as a vacuum pump or a compressor, for example, the gas in the through hole or recess If is activated by the operation of the intake source.
  • a plurality of through holes If are formed at appropriate intervals on the entire surface of the pedestals 4 and 4 as shown in FIGS. 4 (a) (b) (c) and FIG.
  • the through holes If of a single deformation membrane le each It covers in a sealing manner, and an annular adhesive Id is fixed on the work side surface of the deformed film le so as to surround the through hole If.
  • the adhesive Id may have other shapes, such as a lattice shape surrounding the through hole If, in addition to the annular shape.
  • the deformed film le stagnates and deforms in a flat or concave shape, and the adhesive surface of the adhesive Id adheres to the substrate W, and the opposite is true.
  • the deformation film le is stagnantly deformed in a convex shape, and the adhesion surface force of the above-mentioned adhesive Id also forcibly separates the substrate W and peels off. .
  • the above-mentioned adhesive chucks 1 and 1 are provided with the suction suction means 5 and 5 in order to assist the suction and holding of the substrates W and W in the atmosphere, as in the first embodiment described above, if necessary.
  • Small holes may be formed in the deformed membrane le at a position corresponding to the approximate center of each through hole or recess If so that the small hole substrate W It is also possible to adsorb directly or to eject gas such as nitrogen gas or air at the separation timing.
  • two or more conductors la and lb insulated from the surroundings are laid or embedded in the inside or at least one surface of the deformed film le, respectively.
  • the positive electrode la and the negative electrode lb are inserted in the same comb-tooth shape on the same plane into the inside of the deformation film le shown in FIGS. 5 and 6A.
  • Another example of the arrangement is that sealing is performed by sealing so that two or more layers of electrodes 1a and 1b are laminated with the insulating layer lg interposed as shown in FIG. 6 (b). It is also possible to enhance the voltage performance.
  • the charge removal method by the work charge removal apparatus will be described according to the operation steps, first of all, the protrusion of the deformable film le from the adhesive chuck 1 of the upper surface plate A as shown in FIG. By peeling off the upper substrate W by deformation, the bonding step with the substrate W held by suction and held by the electrostatic chuck 1 of the lower platen B is performed.
  • both substrates W and W on which this bonding process is completed are separated from each other by moving the lower and upper plates A and B in the Z (upper and lower) direction as shown in FIG. 4 (b).
  • the lower substrate W is peeled off by projecting (convex) deformation of the deformable film le from the adhesive chuck 1.
  • the lift pins of the peeling means 3 start to operate as shown in FIG. 4 (c), and the bonded substrates W, W are completely removed from the surface lc of the adhesive chuck 1 of the lower platen B.
  • a slight gap S of, for example, about 2 to 3 mm is formed between the lower substrate W and the back surface W1 of the lower substrate W apart.
  • an alternating high voltage is applied to the two conductors la and lb provided on the deformed film le of the adhesive chuck 1 of the lower platen B.
  • an alternating electric field is induced in the vicinity, and in this electric field portion, part of the atmosphere gas such as air is instantaneously ionized and ionized, and these charges are Neutralize part of the charge remaining on the back surface W1 of W.
  • the air flow change of the workpiece W having any material power regardless of the insulator's semiconductor and conductor since the removal force can be eliminated without any restriction on the installation location, and the adhesive chuck is used instead of the electrostatic chuck of the first embodiment, there is an advantage that the substrate can be surely detached and attached with a simple structure.
  • the conductive plates la, lb as shown can be covered with only the deformation film le of the adhesive chuck 1 of the lower surface plate B, in the upper surface plate A
  • the charge removal can be performed even when the upper substrate W is peeled from the adhesive chuck 1 of the upper surface plate A.
  • the work holding body 1 is integrally provided with the adhesive Id on a part of the deformation film le, and the immersion (concave) deformation thereof is obtained.
  • the configuration of the adhesive chuck that forcibly separates the adhesive surface of the adhesive material Id from the substrate W to separate it from the substrate W is the embodiment 1 shown in FIGS. 1 to 3 and the embodiment 2 shown in FIGS.
  • the other configuration is the same as the embodiment 1 shown in FIGS. 1 to 3 and the embodiment 2 shown in FIGS. 4 to 6.
  • a plurality of circular recesses lh are opened at appropriate intervals in the entire holding surface lc as shown in FIGS. 7 (a), (b) and (c) and FIG.
  • the recess lh is covered in a sealing manner with a single deformation film, and a circular adhesive material Id is disposed on the work-side surface of the deformation film le so as to face each recess lh.
  • an elastic material may be used as a method of integrally arranging the adhesive material Id on a part of the deformed film le.
  • the adhesive film is integrally formed flush with the surface of the deformed film le or is integrally formed only at a desired portion of the surface by surface-treating or processing similar to the deformed film le.
  • the external force also supplies a gas into each of the concave portions lh shown in FIGS. 7 (a) and 7 (b), and the deformable membrane le is pressed against the back side force thereof to be flat or convex.
  • the pressure-sensitive adhesive surface of the adhesive Id is adhered to the substrate W by wicking, and conversely, the gas is exhausted from the inside of each recess lh to the outside and the deformation film le is sunk in a concave shape to adhere the adhesive Id.
  • the surface is immersed in the recess lh, and the adhesive surface of the adhesive Id separates the substrate W and peels off.
  • the present invention is not limited thereto, and a substrate assembling apparatus other than the substrate bonding machine and a substrate transporting substrate are provided. Even when deployed in a plate transport device or a semiconductor manufacturing device that holds and processes workpieces such as silicon wafers in a removable manner, the workpieces can be de-electrified when they are detached (peeled off) from the workpiece holders. good.
  • the force shown when the workpiece holder 1 is an electrostatic chuck or an adhesive chuck is not limited thereto, and vacuum suction or other mechanical holding may be used instead. It may be a means. Even in this case, if two conductors for static elimination can be laid or embedded in the vacuum adsorption device or other mechanical holding means, the same function and effect as those of the above-described embodiment can be obtained.
  • the workpiece W is a conductive material such as a conductor or a semiconductor such as a silicon wafer, or the workpiece treatment is a semiconductor device such as a film deposition treatment by etching or CVD.
  • the substrate processing may be performed during the manufacturing process of Also in this case, the same effects as those of the above-described embodiment can be obtained.
  • FIG. 1 A longitudinal sectional front view showing a first embodiment of a work charge removing apparatus used for a work charge removing method of the present invention, (a) shows a state before the charge removal, (b) shows the time of charge removal There is.
  • FIG. 2 is a cross-sectional plan view showing a schematic structure of a work holder.
  • FIG. 3 is a graph showing static electricity removal by voltage application of an electrostatic chuck (ESC).
  • ESC electrostatic chuck
  • FIG. 4 is a front view in vertical section showing a second embodiment of the work static eliminating device of the present invention, in which (a) and (b) show the state before static elimination and (c) shows at static elimination.
  • FIG. 5 is a partially cutaway plan view showing a schematic structure of a work holder.
  • FIG. 6 (a) and (b) are cross-sectional views of the work holder showing an example of arrangement of the conductors.
  • FIG. 7 A longitudinal sectional front view showing a third embodiment of the work static elimination device of the present invention, (a) and (b) show the state before the static elimination, and (c) shows the state during static elimination.
  • FIG. 8 is a partially cutaway plan view showing a schematic structure of a work holder.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

Une pièce d’usinage composée d'une substance quelconque, qu'il s'agisse d’un isolant, d’un semi-conducteur ou d’un conducteur, est neutralisée sans changement de circulation d'air ni limitation de la zone d’installation d’un appareil. Dans un air atmosphérique ou un vide faible prescrit dans lequel une pièce d’usinage (W) est séparée d’une surface (1c) d’un corps de maintien de pièce d’usinage (1), une tension de conducteurs (1a, 1b) prévue sur le corps de maintien de pièce d’usinage (1) est modifiée pour induire un champ électrique au voisinage de la pièce d’usinage (W). Ainsi, dans la partie champ électrique, une partie du gaz ambiant, comme de l’air, est ionisée instantanément pour neutraliser les charges laissées sur la pièce d’usinage (W).
PCT/JP2005/008228 2004-05-07 2005-04-28 Procédé de neutralisation de pièce d’usinage et appareil pour ce procede WO2005109489A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006515328A JPWO2005109489A1 (ja) 2004-05-07 2005-04-28 ワーク除電方法及びその装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004138631 2004-05-07
JP2004-138631 2004-05-07

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JP2007157847A (ja) * 2005-12-01 2007-06-21 Shin Etsu Polymer Co Ltd 吸着装置
JP2008016443A (ja) * 2006-06-30 2008-01-24 Lg Philips Lcd Co Ltd 合着装置及びそれを用いた電界発光素子の製造方法
JP2008028208A (ja) * 2006-07-24 2008-02-07 Hitachi Plant Technologies Ltd 基板貼合装置
WO2008114337A1 (fr) * 2007-02-22 2008-09-25 Shin-Etsu Engineering Co., Ltd. Procédé de collage sous vide et dispositif de collage sous vide
WO2009020051A1 (fr) * 2007-08-09 2009-02-12 Lintec Corporation Outil de fixation et procédé de traitement de pièce
WO2009020050A1 (fr) * 2007-08-09 2009-02-12 Lintec Corporation Procédé de transport de pièce traitée et dispositif avec mécanisme de transfert de pièce traitée
WO2009114189A2 (fr) * 2008-03-14 2009-09-17 Dow Corning Corporation Procédé de fabrication d'un module de cellule photovoltaïque
JP2014232773A (ja) * 2013-05-28 2014-12-11 リンテック株式会社 静電保持装置および静電保持装置からの保持対象物の離脱方法
JP2014232772A (ja) * 2013-05-28 2014-12-11 リンテック株式会社 静電保持装置および静電保持装置からの保持対象物の離脱方法
JP2015216364A (ja) * 2014-04-23 2015-12-03 株式会社アルバック 保持装置、真空処理装置
JP2016171292A (ja) * 2015-03-16 2016-09-23 株式会社ディスコ 減圧処理装置
JP2016171291A (ja) * 2015-03-16 2016-09-23 株式会社ディスコ 減圧処理装置

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JP5143463B2 (ja) * 2007-04-04 2013-02-13 株式会社産機 パーツフィーダの除電装置および方法
KR101125430B1 (ko) * 2009-09-04 2012-03-28 주식회사 디엠에스 피처리물의 디척킹과 함께 반응 챔버 내부 및 정전 척의 드라이 클리닝을 실행하는 플라즈마 반응기의 피처리물 디척킹 장치 및 방법
JP5654155B1 (ja) * 2014-04-04 2015-01-14 信越エンジニアリング株式会社 ワーク貼り合わせ装置
JP6471606B2 (ja) * 2015-02-23 2019-02-20 Ａｇｃ株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
JP6468462B2 (ja) * 2015-02-23 2019-02-13 Ａｇｃ株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法

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JP2007157847A (ja) * 2005-12-01 2007-06-21 Shin Etsu Polymer Co Ltd 吸着装置
JP4573763B2 (ja) * 2005-12-01 2010-11-04 信越ポリマー株式会社 吸着装置
US7799584B2 (en) 2006-06-30 2010-09-21 Lg Display Co., Ltd. Attaching device and method of fabricating organic light emmiting device using the same
JP2008016443A (ja) * 2006-06-30 2008-01-24 Lg Philips Lcd Co Ltd 合着装置及びそれを用いた電界発光素子の製造方法
JP2008028208A (ja) * 2006-07-24 2008-02-07 Hitachi Plant Technologies Ltd 基板貼合装置
JP4661716B2 (ja) * 2006-07-24 2011-03-30 株式会社日立プラントテクノロジー 基板貼合装置
WO2008114337A1 (fr) * 2007-02-22 2008-09-25 Shin-Etsu Engineering Co., Ltd. Procédé de collage sous vide et dispositif de collage sous vide
WO2009020050A1 (fr) * 2007-08-09 2009-02-12 Lintec Corporation Procédé de transport de pièce traitée et dispositif avec mécanisme de transfert de pièce traitée
US8465011B2 (en) 2007-08-09 2013-06-18 Lintec Corporation Fixing jig and method of processing work
KR101486104B1 (ko) 2007-08-09 2015-01-23 린텍 가부시키가이샤 작업물 반송 방법 및 작업물 전달 기구를 갖는 장치
JP2009043996A (ja) * 2007-08-09 2009-02-26 Lintec Corp 固定治具並びにワークの処理方法
JP2009043995A (ja) * 2007-08-09 2009-02-26 Lintec Corp ワーク搬送方法及びワーク受渡し機構を有する装置
WO2009020051A1 (fr) * 2007-08-09 2009-02-12 Lintec Corporation Outil de fixation et procédé de traitement de pièce
US8529314B2 (en) 2007-08-09 2013-09-10 Lintec Corporation Method of transporting work and apparatus with work handover mechanism
WO2009114189A2 (fr) * 2008-03-14 2009-09-17 Dow Corning Corporation Procédé de fabrication d'un module de cellule photovoltaïque
US8420412B2 (en) 2008-03-14 2013-04-16 Dow Corning Corporation Method of forming a photovoltaic cell module
WO2009114189A3 (fr) * 2008-03-14 2009-12-17 Dow Corning Corporation Procédé de fabrication d'un module de cellule photovoltaïque
JP2014232773A (ja) * 2013-05-28 2014-12-11 リンテック株式会社 静電保持装置および静電保持装置からの保持対象物の離脱方法
JP2014232772A (ja) * 2013-05-28 2014-12-11 リンテック株式会社 静電保持装置および静電保持装置からの保持対象物の離脱方法
JP2015216364A (ja) * 2014-04-23 2015-12-03 株式会社アルバック 保持装置、真空処理装置
JP2016171292A (ja) * 2015-03-16 2016-09-23 株式会社ディスコ 減圧処理装置
JP2016171291A (ja) * 2015-03-16 2016-09-23 株式会社ディスコ 減圧処理装置

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KR20070009523A (ko) 2007-01-18
JPWO2005109489A1 (ja) 2008-03-21
CN1771592A (zh) 2006-05-10
TW200608837A (en) 2006-03-01

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