WO2005108483A1 - Dispositif a composant electronique - Google Patents
Dispositif a composant electronique Download PDFInfo
- Publication number
- WO2005108483A1 WO2005108483A1 PCT/JP2005/008520 JP2005008520W WO2005108483A1 WO 2005108483 A1 WO2005108483 A1 WO 2005108483A1 JP 2005008520 W JP2005008520 W JP 2005008520W WO 2005108483 A1 WO2005108483 A1 WO 2005108483A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic component
- epoxy resin
- component device
- group
- component
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 105
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims abstract description 91
- 239000000203 mixture Substances 0.000 claims abstract description 82
- 229920005989 resin Polymers 0.000 claims abstract description 63
- 239000011347 resin Substances 0.000 claims abstract description 63
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 62
- 238000007789 sealing Methods 0.000 claims abstract description 38
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 36
- 239000011256 inorganic filler Substances 0.000 claims abstract description 26
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims description 84
- -1 methacryloxy Chemical group 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 125000003700 epoxy group Chemical group 0.000 claims description 20
- 239000006259 organic additive Substances 0.000 claims description 20
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 19
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 19
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 229920005992 thermoplastic resin Polymers 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 230000009477 glass transition Effects 0.000 claims description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 125000000962 organic group Chemical group 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 125000003277 amino group Chemical group 0.000 claims description 6
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- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 claims description 5
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- BBBUAWSVILPJLL-UHFFFAOYSA-N 2-(2-ethylhexoxymethyl)oxirane Chemical compound CCCCC(CC)COCC1CO1 BBBUAWSVILPJLL-UHFFFAOYSA-N 0.000 claims description 4
- VMSIYTPWZLSMOH-UHFFFAOYSA-N 2-(dodecoxymethyl)oxirane Chemical compound CCCCCCCCCCCCOCC1CO1 VMSIYTPWZLSMOH-UHFFFAOYSA-N 0.000 claims description 4
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 claims description 4
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- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 claims description 3
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 claims 2
- MVNCAPSFBDBCGF-UHFFFAOYSA-N alpha-pinene Natural products CC1=CCC23C1CC2C3(C)C MVNCAPSFBDBCGF-UHFFFAOYSA-N 0.000 claims 1
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 31
- 239000003822 epoxy resin Substances 0.000 abstract description 28
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- 125000001931 aliphatic group Chemical group 0.000 description 9
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
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- 230000000052 comparative effect Effects 0.000 description 8
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- 239000011342 resin composition Substances 0.000 description 8
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- 239000010703 silicon Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229920000742 Cotton Polymers 0.000 description 6
- 230000008961 swelling Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000003085 diluting agent Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
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- 238000007614 solvation Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
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- 239000003054 catalyst Substances 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
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- 238000002844 melting Methods 0.000 description 3
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- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- IVIDDMGBRCPGLJ-UHFFFAOYSA-N 2,3-bis(oxiran-2-ylmethoxy)propan-1-ol Chemical compound C1OC1COC(CO)COCC1CO1 IVIDDMGBRCPGLJ-UHFFFAOYSA-N 0.000 description 2
- NQFUSWIGRKFAHK-UHFFFAOYSA-N 2,3-epoxypinane Chemical compound CC12OC1CC1C(C)(C)C2C1 NQFUSWIGRKFAHK-UHFFFAOYSA-N 0.000 description 2
- SYEWHONLFGZGLK-UHFFFAOYSA-N 2-[1,3-bis(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COCC(OCC1OC1)COCC1CO1 SYEWHONLFGZGLK-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
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- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
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- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
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- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 1
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- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- MZWXWSVCNSPBLH-UHFFFAOYSA-N 3-(3-aminopropyl-methoxy-methylsilyl)oxypropan-1-amine Chemical compound NCCC[Si](C)(OC)OCCCN MZWXWSVCNSPBLH-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- LYWVNPSVLAFTFX-UHFFFAOYSA-N 4-methylbenzenesulfonate;morpholin-4-ium Chemical compound C1COCCN1.CC1=CC=C(S(O)(=O)=O)C=C1 LYWVNPSVLAFTFX-UHFFFAOYSA-N 0.000 description 1
- ZUTYZAFDFLLILI-UHFFFAOYSA-N 4-sec-Butylphenol Chemical compound CCC(C)C1=CC=C(O)C=C1 ZUTYZAFDFLLILI-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- SRORDPCXIPXEAX-UHFFFAOYSA-N CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC Chemical compound CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC SRORDPCXIPXEAX-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- IILUTRCPUABLDZ-UHFFFAOYSA-N acetyl acetate;copper Chemical compound [Cu].CC(=O)OC(C)=O IILUTRCPUABLDZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- NQFUSWIGRKFAHK-BDNRQGISSA-N alpha-Pinene epoxide Natural products C([C@@H]1O[C@@]11C)[C@@H]2C(C)(C)[C@H]1C2 NQFUSWIGRKFAHK-BDNRQGISSA-N 0.000 description 1
- 229930006723 alpha-pinene oxide Natural products 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 235000012000 cholesterol Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000001177 diphosphate Substances 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- FOBPTJZYDGNHLR-UHFFFAOYSA-N diphosphorus Chemical compound P#P FOBPTJZYDGNHLR-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229940091173 hydantoin Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- VKCYHJWLYTUGCC-UHFFFAOYSA-N nonan-2-one Chemical compound CCCCCCCC(C)=O VKCYHJWLYTUGCC-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- FOKWMWSOTUZOPN-UHFFFAOYSA-N octamagnesium;iron(2+);pentasilicate Chemical group [Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Fe+2].[Fe+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] FOKWMWSOTUZOPN-UHFFFAOYSA-N 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229940070721 polyacrylate Drugs 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- PTCSYKMYHDPUDF-UHFFFAOYSA-N zinc acetyl acetate Chemical compound [Zn+2].C(C)(=O)OC(C)=O PTCSYKMYHDPUDF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5033—Amines aromatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Definitions
- the present invention relates to a connection electrode section for a semiconductor package such as a BGA (ball-grid 'array) or CSP (chip-scale' package or chip-size 'package) or a semiconductor component such as a semiconductor element.
- a semiconductor package such as a BGA (ball-grid 'array) or CSP (chip-scale' package or chip-size 'package) or a semiconductor component such as a semiconductor element.
- the board mounting connection method which electrically connects the semiconductor component and the opposing electrodes of the circuit board via bumps
- the gap between the semiconductor package and the circuit board is filled with a liquid epoxy resin composition and sealed with a resin.
- the present invention relates to an electronic component device having good repairability.
- the liquid resin composition used for the underfill is generally Since a one-pack type thermosetting resin composition containing a siloxane resin as a main component is used, it does not melt, has high adhesive strength, does not decompose, and is insoluble in solvents after being heated and cured.
- repair cannot be easily performed. Therefore, once underfill is performed, for example, there is a problem that an electronic component device having a defective electrical connection is scrapped and must be discarded. This means that in recent years, recyclability has been required for global environmental protection, and it is necessary to avoid generating waste as much as possible, and it is possible to repair even underfill. Is required.
- an epoxy resin is used as a main component, a capsule-type curing agent coated with a thermoplastic resin is used as a curing agent, and a resin is imparted with a resin.
- An electronic component bonding adhesive using an acrylic resin as an agent has been disclosed (see Patent Document 1).
- Patent Document 1 JP-A-7-102225
- Patent Document 2 JP 2001-81439A
- Patent Document 3 JP-A-10-204259
- the adhesive for bonding electronic components described in Patent Document 1 has thixotropic properties and thus is suitable for fluidity as an underfill. It is desirable for the fill to have flow characteristics that do not exhibit shear rate dependence.
- the adhesive described in Patent Document 2 obtained by uniformly stirring and mixing generally has a high viscosity in accordance with the molecular weight of the thermoplastic resin. After mixing the prepared inorganic filler, the viscosity increased, and it was difficult to say that the low viscosity required for the underfill could be achieved.
- the thermoplastic resin is used for electronic parts.
- thermosetting resin composition described in Patent Document 3 does not describe the effect on the physical properties such as the glass transition point of the cured product which is important for the reliability of the connected mounting structure. It is insufficient as an adhesive material for underfill.
- thermosetting resin composition such as an epoxy resin
- a thermoplastic resin such as polymethyl methacrylate is used as described in the above-mentioned technology.
- the resin is mixed, there is a difficulty in that a step of removing the cured product residue remaining on the circuit board with a solvent after heating the silicon chip and removing the chip needs to be performed at a high temperature. It has been difficult to say that the above-mentioned conventional technique is sufficient because it is desired that the work of repairing the cured body can be performed at around room temperature.
- the present invention has been made in view of such circumstances, and it is possible to remove a residue near room temperature even in an electronic component device having an electrical connection failure once underfilled.
- a highly reliable electronic component that is easily sealed with a low-viscosity epoxy resin composition for encapsulation that has excellent repairability and that has a connected mounting structure and high reliability. Its purpose is to provide a device.
- the electronic component device of the present invention provides the electronic component device, wherein the connection electrode portion provided on the semiconductor component and the connection electrode portion provided on the circuit board face each other.
- the present inventors have achieved a circuit board and a semiconductor component (semiconductor device) in order to achieve the above object. And semiconductor devices, etc.), the epoxy resin composition which is an underfill material for sealing the voids with the resin.
- the present inventors have found that a cured product of a specific epoxy resin composition is solvated with a specific solvent and subsequently swells, and as a result, a decrease in the film strength of the cured product as a sealing resin and It has been found that the adhesive strength is reduced, the cured body can be mechanically peeled, and the semiconductor element (flip chip) can be repaired (Japanese Patent Application Laid-Open No. 2003-119454).
- the specific fluorinated aromatic diamines as the curing agent decrease the solubility parameter [Solubility Parameter (SP)] value of the cured product due to the trifluoromethyl substituent or the fluorine substituent, so that the specific solvent is used.
- SP solubility Parameter
- the present inventors have repeatedly studied an epoxy resin composition which is an underfill material for resin sealing a gap between a circuit board and a semiconductor component in order to achieve the above object.
- an organic additive [component (D)] is blended together with the above components (A) to (C)
- the cured product of the epoxy resin composition is solvated with a specific solvent, and swelling occurs continuously.
- the coating strength of the cured resin, which is the sealing resin, and the adhesive strength are reduced, and the cured product can be mechanically peeled off, and the resin residue remaining on the circuit board can be easily removed at room temperature or the like.
- the present inventors have found that repair of semiconductor components such as the above becomes easier, and arrived at the present invention.
- the present invention includes the following aspects.
- a semiconductor component is mounted on the circuit board in a state where the connection electrode section provided on the semiconductor component and the connection electrode section provided on the circuit board face each other.
- the sealing resin layer contains the following components (A) to (C) together with the following components (D).
- m is a positive number from 1 to 4.
- R 1 to R 4 are hydrogen
- aromatic diamine curing agent as the component (B) is at least one of a fluorinated aromatic diamine represented by the following general formula (2) and a derivative thereof.
- Y is fluorine and Z or C, F ⁇ , ( ⁇ is from 1 to 10
- m is a positive number from 1 to 4.
- R * 5 ⁇ R e is hydrogen
- a monovalent organic group which may be the same or different 1 /
- the aromatic diamine curing agent as the component (B) is a monoepoxy compound having one epoxy group in one molecule, and 2,2′-ditrifluoromethyl—4, 4.
- the inorganic filler as the component (C) is a spherical silica powder having an average particle diameter of 10 m or less, the surface of which is coated with an organic silane compound represented by the following general formula (3).
- J3 1 is at least
- organosilane compound represented by the general formula (3) is an organosilane compound represented by the following general formula (4).
- ⁇ 1 is a monovalent organic group other than hydrogen, and 7 is a divalent organic group.
- the organic additive as the component (D) is at least one of spherical thermoplastic resin particles having an average particle diameter of 10 m or less and spherical crosslinked resin particles having an average particle diameter of 10 ⁇ m or less.
- the weight-average molecular weight of the spherical polymethyl methacrylate particles is from 100,000 to 5,000.
- spherical polymethyl methacrylate particles are spherical crosslinked polymethyl methacrylate particles having a glass transition temperature of 100 ° C. or higher.
- the present invention provides an organic additive [component (D)] together with the components (A) to (C).
- This is an electronic component device in which the gap between the circuit board and the semiconductor component is sealed by a sealing resin layer containing a liquid epoxy resin composition. Therefore, the liquid epoxy resin composition easily solvates with a specific organic solvent at room temperature and swells even after being cured with low viscosity and without generation of voids due to filling. As a result, the strength of the cured product is significantly reduced, and the cured product can be easily separated from the adherend (such as an electrode). Therefore, an electronic component device obtained by resin encapsulation using this liquid epoxy resin composition has excellent connection reliability, and even if a connection failure occurs due to positional displacement between electrodes, etc. An electronic component device with excellent repairability can be obtained without discarding the electronic component device itself.
- aromatic diamine curing agent [component (B)] at least one of an aromatic diamine and a derivative thereof represented by the following general formula (1) or a general formula (2)
- the use of at least one of the fluorine-containing aromatic diamines and derivatives thereof represented by the following formula (1) is preferred because the effect of rapid swelling and ease of repair can be exhibited.
- aromatic diamine curing agent a monoepoxy compound containing one epoxy group in one molecule and 2,2′-ditrifluoromethyl-4,4
- reaction product with '-diaminobiphenyl enhances solvation and swelling, and enables good repair.
- aromatic diamine curing agent [component (B)] at least one of an aromatic diamine represented by the following general formula (1) and a derivative thereof, or a compound represented by the general formula (2):
- component (A) the fluorinated aromatic diamines and derivatives thereof and the reaction of the liquid epoxy resin (component (A)) with a prepolymer yields a further improvement in the curing speed. Can be achieved.
- the liquid epoxy resin composition can be formed in advance from the liquefaction to the viscous paste-like state, complicated steps are not required in the measurement at the time of mixing and the subsequent dispersion step, and the liquid epoxy resin composition can be easily obtained. be able to.
- FIG. 1 is a cross-sectional view schematically showing one example of an electronic component device of the present invention.
- FIG. 2 is a cross-sectional view schematically showing another example of the electronic component device of the present invention.
- the electronic component device of the present invention provides a semiconductor component, a connection electrode portion provided on the semiconductor component, a circuit board, a connection electrode portion provided on the circuit board, and a gap between the circuit board and the semiconductor component.
- the semiconductor component is mounted on the circuit board such that the connection electrode provided on the semiconductor component and the connection electrode provided on the circuit board face each other.
- the sealing resin is a cured product of a liquid epoxy resin composition containing the following components (A), (B), (C) and (D).
- the semiconductor component is a semiconductor element (flip chip)
- the semiconductor is placed on the printed circuit board 2.
- Element (flip chip) 1 is mounted. Then, a gap between the wiring circuit board 2 and the semiconductor element (flip chip) 1 is resin-sealed by a sealing resin layer 4 formed using a liquid epoxy resin composition.
- connection electrode portion 3 provided on the semiconductor element 1 is formed in a bump shape, but is not particularly limited to this, and is provided on the printed circuit board 2.
- the connection electrode portion 5 may be provided in a bump shape.
- the semiconductor component is a semiconductor device (semiconductor package)
- the connection electrode portion (solder bump) 13 provided on the semiconductor device (semiconductor package) 11 and the connection electrode portion (solder pad) 15 provided on the wiring circuit board 12 face each other.
- the semiconductor package 11 is mounted on the wiring circuit board 12.
- a gap between the printed circuit board 12 and the semiconductor package 11 is resin-sealed by a sealing resin layer 14 formed using a liquid epoxy resin composition.
- the shape of the semiconductor package 11 is not particularly limited as long as it is provided with a connection electrode portion (solder bump) 13 and can be mounted on the wiring circuit board 12. Ball 'grids' arrays and CSPs (chip' scale 'packages or chip size' packages) are useful.
- connection electrode portion 13 provided on the semiconductor package 11 is formed in a bump shape.
- connection electrode portion 13 provided on the wiring circuit board 12 is not particularly limited to this.
- the electrode section 15 may be provided in a bump shape.
- the liquid epoxy resin composition which is a material for forming the sealing resin layer 4 and the sealing resin layer 14, is prepared by curing the liquid epoxy resin (A component) and the aromatic diamines even when the V difference is large. It is obtained by blending an organic additive (D component) together with an agent (B component) and an inorganic filler (C component).
- the liquid refers to a liquid that exhibits fluidity at 25 ° C.
- the viscosity at 25 ° C is in the range of 0.1 OlmPa's to: LOOOO Pa's.
- the viscosity is measured using, for example, an EMD type rotational viscometer. Can be done.
- the liquid epoxy resin (A component) is not particularly limited as long as it is a liquid epoxy resin containing two or more epoxy groups in one molecule.
- a liquid epoxy resin containing two or more epoxy groups in one molecule for example, bisphenol A type, Various liquid epoxy resins such as bisphenol F type, hydrogenated bisphenol A type, bisphenol AF type and phenol novolak type, and derivatives thereof, polyhydric alcohol and epichlorohydrinka Induced liquid epoxy resins and derivatives thereof Glycidylamine type, hydantoin type, aminophenol type, arin type, toluidine type, etc.
- the aromatic diamine curing agent (component B) has a function of curing the liquid epoxy resin (component A), and it is preferable to use at least one of aromatic diamine and a derivative thereof. It is more preferable to use at least one of a fluorine-containing aromatic diamine and a derivative thereof from the viewpoint of solvation with a specific solvent and subsequent swelling.
- the aromatic diamine in at least one of the above aromatic diamines and derivatives thereof includes p-phenylenediamine, m-phenylenediamine, 2,5 toluenediamine, 2,4 toluenediamine, and 4,6 dimethyl m-diamine.
- Aromatic mononuclear diamines such as phenylenediamine and 2,4 diaminomesitylene, 4, 4 'diamino diphenyl ether, 3, 3'- diamino diphenyl ether, 3, 4' diamino diphenyl ether, 4, 4 'diaminodiphenylmethane, 3, 3'-diaminodiphenylmethane, 4, 4 'diaminodiphenylsulfone, 3, 3'-diaminodiphenylsulfone, 4, 4 '-diaminodiphenylsulfide, 3, 3'-diaminodiphenyl -Risulfide, 4, 4'-Diaminobenzophenone, 3,3'-Aromatic dinuclear diamine such as diaminobenzophenone, 1,4-bis 4-aminophenoxy) benzene, 1, 4-bis (3-aminophenoxy) benzene, 1,
- the use of at least one of an aromatic diamine represented by the following general formula (1) and a derivative thereof as the aromatic diamine curing agent (component B) is advantageous in pot life at room temperature. Is also preferably used.
- X is hydrogen and / or C n H 2n ( ⁇ is 1 to 10
- R 1 to R 4 are hydrogen or a monovalent organic group.
- the monovalent organic group include a saturated alkyl group represented by Cn H2n + 1 (n is a positive number of 1 to 10), an aryl group, -CH2CH (OH) CH2—OCnH2n 3 alkoxy substitution represented by +1 — 2 hydroxypropyl group, CH2 CH (OH) CH2 — O — 3 aryl substitution represented by R 9 (R 9 is an aryl group) — 2 hydroxypropyl group, etc. can give .
- the Ri ⁇ R 4 may be different be the same as each other.
- the fluorinated aromatic diamine in at least one of the above fluorinated aromatic diamines and derivatives thereof is not particularly limited as long as it is a fluorinated aromatic diamine having a primary amino group.
- aromatic diamine curing agent component B
- at least one of a fluorine-containing aromatic diamine represented by the following general formula (2) and a derivative thereof can be used at room temperature. It is preferably used because the pot life becomes longer.
- m is a positive number from 1 to 4.
- R 5 is hydrogen
- R 5 to R ° are hydrogen or a monovalent organic group.
- the monovalent organic group include a saturated alkyl group represented by Cn H2n + 1 (n is a positive number of 1 to 10), an aryl group, -CH2CH (OH) CH2—OCnH2n 3-alkoxy-substituted 1-hydroxypropyl group represented by +1; 3-aryl-substituted 2-hydroxypropyl group represented by CH2 CH (OH) CH2—O—R 10 (R 10 is aryl group) And so on.
- R 5 to R 8 may be the same or different from each other.
- 2,2'-ditrifluoromethyl-4,4'-diaminobihue having the smallest active hydrogen equivalent is used as the aromatic diamine curing agent (component B).
- the use of p-phenylenediamine or m-phenylenediamine, which also has the lowest active hydrogen equivalent can reduce the amount of compounding, It is preferable from the viewpoint that the viscosity of the epoxy resin composition can be reduced.
- the aromatic diamine curing agent (component B) the above-mentioned fluorinated aromatic diamine, particularly 2,2′-ditrifluoromethyl-1,4,4′-diaminobiphenyl, in one molecule
- a reaction product with a monoepoxy compound containing one epoxy group is preferred from the viewpoint that the solvation and swelling properties are improved and good repair is possible.
- a predetermined amount of each component is charged into a reaction vessel without a catalyst, and the reaction is carried out by nitriding.
- the reaction is carried out by heating to about 60 to 120 ° C under a stream of air until the epoxy groups are consumed. And, in this way, for example, N, N, ⁇ ′, ⁇ ′—4-substituted fluorine-containing aromatic diamine compound is obtained.
- the monoepoxy conjugate is not particularly limited as long as it is an epoxy compound containing one epoxy group in one molecule.
- the mixing ratio of the liquid epoxy resin (Component A) and the aromatic diamine curing agent (Component B) is one epoxy group of the liquid epoxy resin (Component A).
- the number of active hydrogens in the aromatic diamine curing agent (component B) is preferably set in the range of 0.4 to 1.6. More preferably, it is in the range of 0.6 to 1.2. That is, when the number of active hydrogens per epoxy group exceeds 1.6, the viscosity of the liquid epoxy resin composition tends to increase, and when it is less than 0.4, the liquid epoxy resin composition tends to increase. This is because the glass transition temperature of the cured product tends to decrease.
- the aromatic diamine represented by the above general formula (1) and its aromatic diamine At least one derivative or a fluorinated aromatic represented by the above general formula (2)
- the prepolymer is, for example, at least one of the aromatic diamine represented by the general formula (1) and a derivative thereof or the fluorine-containing aromatic diamine represented by the general formula (2) and a derivative thereof And a polyfunctional aliphatic liquid epoxy compound having two or more epoxy groups in one molecule.
- a predetermined amount of each component is charged into a reaction vessel without a catalyst, and heated to about 60 to 120 ° C under a nitrogen stream to react until a predetermined molecular weight is reached, thereby producing a pre-polymer. .
- the prepolymer preferably has a molecular weight of about 400 to 5,000 in terms of polystyrene equivalent weight average molecular weight.
- a prepolymer is used to form a volatile low-boiling low molecular weight compound. It is possible to prevent voids in the underfill sealing resin layer due to evaporation and volatilization of the resin.
- polyfunctional aliphatic liquid epoxy resin examples include ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, butanediol diglycidyl ether, neopentyl glycol diglycidyl ether, diglycidyl diphosphorus, and triglycidyl diglycidyl ether.
- Examples include aliphatic diols and triols such as methylolpropane diglycidyl ether, trimethylolpropane triglycidyl ether, glycerin diglycidyl ether, and glycerin triglycidyl ether, and polyfunctional glycidyl ethers of aliphatic polyfunctional alcohols.
- various known curing accelerators can be used to shorten the curing time.
- an acidic catalyst such as salicylic acid
- a Lewis acid such as copper acetyl acetate and zinc acetyl acetate. These may be used alone or in combination of two or more.
- the amount of the curing accelerator is not particularly limited, but may be a desired curing amount for the mixture of the liquid epoxy resin (A component) and the aromatic diamine curing agent (B component). It is preferable to appropriately set the ratio so that the speed can be obtained. For example, the cure speed As an index, it is possible to easily determine the usage amount while measuring the time of geli dwelling with a hot plate. As an example, it is preferable to set the content in the range of 0.01 to 3% by weight in the whole liquid epoxy resin composition.
- silica powder such as synthetic silica and fused silica is used.
- inorganic fillers it is particularly preferable to use spherical silica powder because the effect of reducing the viscosity of the liquid epoxy resin composition is large. It is preferable to use the inorganic filler having a maximum particle diameter of 24 m or less. Further, those having an average particle diameter of 10 m or less are preferably used together with the above-mentioned maximum particle diameter.
- 5 / zm is preferably used. Further, it is preferable to use one having a specific surface area of 1 to 4 m 2 / g by the BET method.
- the maximum particle size and the average particle size can be measured using, for example, a laser diffraction / scattering type particle size distribution analyzer.
- the inorganic filler (component C) preferably has an average particle diameter of 10 ⁇ m or less, the surface of which is coated with an organosilane conjugate represented by the following general formula (3).
- Spherical silica particles are used, and the above-mentioned surface-coated spherical silica particles having an average particle diameter of 1 to 5 m are particularly preferable.
- the aminosilane cup represented by the following general formula (4) is included.
- Spherical silica particles having an average particle diameter of 10 ⁇ m or less whose surface is coated with a ring agent are used, and spherical silica particles having an average particle diameter of 1 to 5 / ⁇ are particularly preferred. in this way, By coating the surface of the spherical silica particles with the above aminosilane coupling agent, the dispersibility is improved and the viscosity is reduced due to the interaction such as wettability with the liquid epoxy resin (component A) and the like.
- ⁇ ′ is a monovalent group other than hydrogen, and is a divalent group.
- organosilane conjugate represented by the above general formula (3) examples include, for example, ⁇ -2 (aminoethyl) -3-aminopropyl-methyldimethoxysilane, ⁇ -2 (aminoethyl) -13-aminopro Pill-triethoxysilane, -2- (aminoethyl) -3-aminopropyl-trimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane and the like. These may be used alone or in combination of two or more.
- spherical silica particles having an average particle diameter of 10 ⁇ m or less and whose surface is coated with an organic titanium compound represented by the following general formula (5) are preferably used. Particularly preferred are spherical silica particles having an average particle diameter of 1 to 5 m coated on the surface.
- ⁇ 1 is a monovalent group other than hydrogen, and ⁇ is at least
- organotitanium conjugate represented by the general formula (5) examples include isopropyl triisostearoyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, and isopropyl tris (dioctyl pyrophosphate) titanate.
- Such spherical silica particles whose surface is coated with the organosilane compound or the organotitanium conjugate are produced, for example, as follows. That is, using the above-mentioned organosilane compound or organotitanium compound, and using a conventionally known technique such as a treatment for an inorganic filler such as a vapor spray method or a wet method, spherical silica particles whose surface is coated with the compound are used. It is made.
- the surface can also be obtained by dissolving in an aqueous alcohol solution or solvent and subjecting it to a surface treatment.
- the amount of the inorganic filler (component C) is preferably set in the range of 10 to 80% by weight of the entire liquid epoxy resin composition, and particularly preferably 30 to 70% by weight. . In other words, if the amount is less than 10% by weight, the effect of reducing the linear expansion coefficient of the liquid epoxy resin composition cured product may be small, and if it exceeds 80% by weight, the liquid epoxy resin composition may not be effective. This is because the viscosity of the product tends to increase.
- the organic additive (D component) used together with the liquid epoxy resin (A component), the aromatic diamine curing agent (B component) and the inorganic filler (C component) includes the liquid epoxy resin (A Component) is a component which is melted by hardening or heat treatment so as to be incompatible with each other to form a domain structure.
- a Component is a component which is melted by hardening or heat treatment so as to be incompatible with each other to form a domain structure.
- spherical thermoplastic resin particles, spherical crosslinked resin particles and the like are used. These may be used alone or in combination of two or more.
- spherical thermoplastic resin particles include particles having a strong force such as polyacrylic resin, polyethersulfone resin, ethylene-butyl acetate copolymer, polyamide resin, and butadiene-styrene copolymer. These may be used alone or in combination of two or more.
- spherical thermoplastic resin particles those having an average particle diameter of 10 m or less are preferably used, and those having an average particle diameter of 1 to 5 / ⁇ are particularly preferably used.
- the average particle diameter can be measured using, for example, a laser diffraction / scattering type particle size distribution analyzer as described above.
- spherical polymethyl methacrylate particles are particularly preferably used, and more preferably spherical polymethyl methacrylate particles having a weight average molecular weight of 100,000 or more are used.
- the weight average molecular weight is 100,000 to 5,000, 0 00 spherical polymethyl methacrylate particles are particularly preferably used.
- the upper limit of the weight average molecular weight is usually 10,000,000.
- the spherical polymethyl methacrylate particles also include epoxy group-containing polymethyl methacrylate particles, carboxy group-containing polymethyl methacrylate particles, polymethyl methacrylate-poly acrylate copolymer particles, and the like. It is the purpose.
- spherical cross-linked resin particles particularly, spherical cross-linked polymethylmetharylate particles are preferably used. More preferably, spherical cross-linked polymethyl methacrylate particles having a glass transition temperature of 100 ° C. or higher are used.
- the filling temperature can be set high, and the sealing time can be reduced with a low viscosity. The effect is that it can be done.
- the above glass transition temperature is a value measured by a thermomechanical analysis (TMA) device.
- the amount of the organic additive (component D) is not particularly limited as long as the effects of the present invention can be obtained, but is set in the range of 2 to 20% by weight of the entire liquid epoxy resin composition. Particularly preferred is 3 to 15% by weight. That is, if the amount of the organic additive is less than 2% by weight, the effect of improving the repairability of the cured liquid epoxy resin composition may not be obtained. ⁇ This is the force that tends to increase the viscosity of the resin composition.
- a reactive diluent can be appropriately compounded for the purpose of lowering the viscosity and the like.
- this reactive diluent is volatile. Since it may contain a low boiling point compound, it must be used at the prescribed curing temperature of the liquid epoxy resin composition which is an underfill resin. It is preferable to use the volatile low-boiling compound after removing it in advance. Further, when the reactive diluent itself is volatile, voids are easily generated in the sealing resin layer at a predetermined curing temperature of the liquid epoxy resin thread and the underfill resin, As such, the use of such reactive diluents is limited.
- Examples of the reactive diluent include n-butyldaricidyl ether, arylglycidylether, 2-ethylhexylglycidylether, styrene oxide, and phen- Luglycidyl ether, cresyl glycidyl ether, lauryl glycidyl ether, p sec butylphenol glycidyl ether, norphenyl glycidyl ether, glycidyl ether of rubinol, glycidyl methacrylate, bulcyclohexene monoepoxide, pinene oxide, tertiary Glycidyl ethers of carboxylic acids, diglycidyl ethers, glycidyl ethers of (poly) ethylene glycol, glycidyl ethers of (poly) propylene glycol, bisphenol A with propylene oxide, bisphenol A epoxy resin and
- the liquid epoxy resin composition may further contain a flame retardant such as antimony trioxide, antimony pentaoxide, or brominated epoxy resin.
- Flame-retardant aids, low-stress agents such as silicones, coloring agents, and the like can be appropriately compounded without departing from the spirit of the present invention.
- Such a liquid epoxy resin composition can be produced, for example, as follows. That is, each component such as the liquid epoxy resin (A component), the aromatic diamine curing agent (B component), the inorganic filler (C component), the organic additive (D component) and, if necessary, the curing accelerator.
- the desired one-part solvent-free liquid epoxy resin is obtained by mixing and dispersing under a high shearing force such as a three-roll or homomixer, and optionally defoaming under reduced pressure.
- a composition can be manufactured.
- a liquid epoxy resin (A component), particularly a polyfunctional aliphatic liquid epoxy resin, and at least one of the aromatic diamine represented by the general formula (1) and a derivative thereof, or
- these components are preliminarily reacted as described above.
- the desired one-part solvent-free liquid epoxy resin composition can be produced in the same manner as described above.
- a semiconductor component eg, a semiconductor element such as a flip chip, a semiconductor package
- an electronic component device by resin sealing of a wiring circuit board include, for example, It is manufactured as follows. That is, a semiconductor component having a connection electrode portion (solder bump) in advance and a wiring circuit board having a connection electrode portion (solder pad) facing the solder bump are connected by solder metal. Next, by utilizing a capillary phenomenon in a gap between the semiconductor component and the printed circuit board, a liquid epoxy resin composition of one component and no solvent is filled and thermally cured to form a sealing resin layer. Seal with grease.
- the semiconductor component is a semiconductor element (flip chip), as shown in FIG. 1, the connection electrode portion (solder bump) 3 provided on the semiconductor element 1 and the wiring circuit board
- the semiconductor element (flip chip) 1 is mounted on the wiring circuit board 2 with the connection electrode portion (solder pad) 5 provided on the wiring circuit 2 facing the wiring circuit board 2 and the wiring circuit board 2 and the semiconductor element (Flip Chip)
- An electronic component device in which the gap with the flip chip 1 is resin-sealed by the sealing resin layer 4 also having the above-mentioned liquid epoxy resin composition strength is manufactured.
- the semiconductor component is a semiconductor device (semiconductor package), as shown in FIG. 2, the connection electrode portion (solder bump) 13 provided on the semiconductor package 11 and the wiring circuit board 12
- the semiconductor package 11 is mounted on the printed circuit board 12 with the provided connection electrode portions (solder pads) 15 facing each other, and the gap between the printed circuit board 12 and the semiconductor package 11 is formed by the liquid epoxy.
- An electronic component device that is resin-sealed by the sealing resin layer 14 that also has a resin composition power is manufactured.
- the filling and sealing can be further facilitated.
- the gap distance between the semiconductor element (flip chip) 1 and the printed circuit board 2 is generally 30 It is about -300 ⁇ m.
- the gap distance between the semiconductor package 11 and the wiring circuit board 12 is generally about 200 to 300;
- the cured epoxy resin composition in the resin-sealed portion of the electronic component device thus obtained swells with a specific organic solvent even after it is cured, and its adhesive strength is reduced.
- the component device can be repaired.
- a ketone solvent As the specific organic solvent, a ketone solvent, a glycol diether solvent, a nitrogen-containing solvent, and the like are preferable. These may be used alone or in combination of two or more.
- ketone solvents include acetophenone, isophorone, ethyl n-butyl ketone, diisobutyl ketone, getyl ketone, cyclohexyl ketone, di-n-propyl ketone, methyl oxide, methyl n-amyl ketone, methyl isobutyl ketone, methyl ethyl ketone, and methyl cyclohexane.
- Xanone, methyl n-heptyl ketone, and holone These may be used alone or in combination of two or more.
- glycol ether-based solvents examples include ethylene glycol getyl ether, ethylene glycol dibutyl ether, ethylene glycolone resin methine oleate, ethylene glycol diole cholesterol methine oleate, and diethylene glycol oleone terephthalate. Athenole, ethylene glycolone dibutylbutyrene, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether and the like. These may be used alone or in combination of two or more.
- nitrogen-containing solvent examples include N, N'-dimethylformamide, N, N'-dimethylacetamide, N-methyl-2-pyrrolidone, N, N'-dimethylsulfoxide, hexamethylphosphortriamide and the like. Is raised. These may be used alone or in combination of two or more.
- a semiconductor component a semiconductor element such as a flip chip or a semiconductor package
- a repaired portion of a printed circuit board is heated to apply the semiconductor component. Is removed.
- the heating temperature at this time is The cured body of the epoxy resin composition of the present invention is heated at a temperature of about + 50 ° C or more from the glass transition temperature of the cured body of the epoxy resin composition of the present invention, and is heated at a temperature equal to or higher than the melting point of the joining metal such as solder. With cohesive failure or adhesion to one (semiconductor component or printed circuit board), both can be easily separated.
- the organic solvent is applied directly or the absorbent obtained by impregnating the organic solvent into absorbent cotton is brought into contact with the residual portion of the cured epoxy resin composition of the printed circuit board at room temperature, more preferably, glass transition.
- the printed circuit board and the mounting part can be reused.
- the semiconductor component to which the residue of the cured product of the liquid epoxy resin composition has adhered is immersed in the above-mentioned organic solvent taken in a predetermined container at room temperature to swell the cured product and remove the semiconductor component to thereby re-use the semiconductor component. Can be used.
- the above organic solvent may be directly applied to the entire repaired portion of the printed circuit board or coated with absorbent cotton impregnated with the organic solvent, although the treatment requires a long time.
- the semiconductor component can be removed from the wiring circuit board after the cured product is swelled by gradually penetrating the organic solvent from the end of the semiconductor component to reduce the strength and adhesion of the cured product.
- n is a positive purity of 0 or more, 99%, and a viscosity of 22 dP a ⁇ s
- Spherical silica particles whose surface has been surface-treated by vapor atomization using 3-aminopropyltriethoxysilane (maximum particle diameter 6 ⁇ m, average particle diameter 2 ⁇ m, specific surface area 2. lm 2 / g) o
- Spherical silica particles whose surface has been surface-treated by vapor spraying using isopropyl triisostearoyl titanate (organic titanium compound) (maximum particle diameter 6 ⁇ m, average particle diameter 2 m, specific surface area 2. lm 2 / g).
- Spherical polymethylmetharylate particles (average particle diameter 4 ⁇ m, maximum particle diameter 10 ⁇ m, weight average molecular weight 3,000,000).
- Spherical polymethylmetharylate particles (average particle diameter 3.3 m, maximum particle diameter 20 ⁇ m, weight average molecular weight 1,750,000).
- Spherical polymethyl methacrylate particles (average particle diameter 4 ⁇ m, maximum particle diameter 10 ⁇ m, weight average molecular weight 400,000).
- Spherical polymethyl methacrylate particles (average particle diameter 3.4 m, maximum particle diameter 20 ⁇ m, weight average molecular weight 400,000).
- Spherical crosslinked polymethyl methacrylate particles (average particle diameter 2.6 m, maximum particle diameter 5 ⁇ m, glass transition temperature 120 ° C).
- a silicon chip (thickness: 370 / ⁇ , size: 10mm XI Omm) having 64 Sn—3Ag—0.5Cu solder bump electrodes with a diameter of 200 / zm was prepared, and copper wiring with a diameter of 300m was prepared.
- 1 mm thick FR-4 glass epoxy wiring circuit with 64 pads (board side electrodes) Copper wiring pads (board side electrodes) coated with 63Sn-37Pb solder paste on the board and soldering the silicon chip After mounting the chip on the substrate with the bump electrodes facing each other, the chip was soldered through a heating reflow furnace at 260 ° C for 5 seconds. The gap between the silicon chip and the circuit board was 210 ⁇ m.
- liquid epoxy resin composition was applied to one side of the gap between the silicon chip (flip chip) and the circuit board by as much as one dollar force.
- the liquid epoxy resin composition is heated and filled by capillary action on a 60 ° C hot plate, the filling time is measured, and after filling is completed, it is cured at 150 ° C for 4 hours.
- An electronic component device was manufactured by sealing with grease.
- the temperature was gradually cooled to room temperature, and then the presence or absence of voids in the sealing resin layer that filled and sealed the gap between the printed circuit board and the semiconductor element was observed with an ultrasonic flaw detector. Then, a force when no void was observed was evaluated as ⁇ , a case where one or two voids were observed was evaluated as ⁇ , and a case where more voids were observed was evaluated as X.
- the conduction failure rate of the electronic component device immediately after resin sealing was measured. After that, the above electronic component device was subjected to a temperature cycle test at 40 ° C for 10 minutes and 125 ° C for 10 minutes using a thermal test device, and the electrical continuity after 1000 cycles was examined. The conduction failure rate (%) was calculated for all 64 copper wiring pads (board-side electrodes) on the circuit board.
- the silicon chip was peeled off from the electronic component device on a hot plate heated to 200 ° C, and after returning to room temperature, the epoxy resin composition remaining at the connection was cured.
- Absorbent cotton containing a mixed solvent of equal amounts of N, N'-dimethylformamide and diethylene glycol dimethyl ether was allowed to stand in the residue of the body, and allowed to stand at 40 ° C for 1 hour. Thereafter, the absorbent cotton is removed, and the cloth is thoroughly wiped with methanol, and the cured epoxy resin composition is peeled off.
- the peelable electronic component device is supplied with the solder paste to the pad portion of the wiring circuit board again, and after melting the solder, In the same manner as above, a silicon chip was mounted on the wiring circuit board, and the electrical conductivity was examined. Thereafter, resin sealing was performed in the same manner as above, and the repairability (rework) property was evaluated.
- the cured epoxy resin composition can be completely peeled off and the electrical connection is complete with the force ⁇ , the cured body can be slightly peeled off and the electrical connection is complete.
- the cured product remains slightly and can be peeled off, but the electrical connection is incomplete.
- the cured epoxy resin composition can hardly be peeled off and the electrical connection is incomplete. Is X.
- Viscosity (at 253 ⁇ 4) 120 350 300 900 80 11S 130 (d Pas)
- Bot life at25U 4 4 4 3 5 4 4 (hours)
- the liquid epoxy resin compositions of all Examples had a long pot life and low viscosity. It can be seen that in combination with the degree, Voidless is excellent as a one-part, non-solvent type liquid epoxy resin composition. Moreover, it is clear that the fabricated electronic component device is excellent in repairability without generation of voids and poor conduction in the formed sealing resin layer. On the other hand, the liquid epoxy resin composition of the comparative example was void-free with no conduction failure, but was inferior in repairability as compared with the example product.
- liquid epoxy resin compositions of Examples and Comparative Examples Using the thus obtained liquid epoxy resin compositions of Examples and Comparative Examples, measuring the viscosity at 25 ° C using an MD-type rotational viscometer, the needle having a needle inner diameter of 0.56 mm was used. Into a syringe made of polypropylene. [0148] Thereafter, the syringe was packed and left at 25 ° C to measure the time until the viscosity doubled, and this was defined as the pot life.
- a CSP package (package height lmm, size 10 mm XI Omm) having 64 Sn—3Ag—0.5Cu solder bump electrodes with a diameter of 200 / zm was prepared, and copper wiring with a diameter of 300 m was prepared.
- the CSP package was soldered through a heating reflow furnace at 260 ° C for 5 seconds.
- the gap between the CSP package and the circuit board is 250 ⁇ m.
- the liquid epoxy resin composition is discharged and applied to one side of the gap between the CSP package and the circuit board with a force of one dollar, and the liquid epoxy resin composition is heated and filled by capillary action on a 60 ° C hot plate. Then, the filling time was measured, and after the filling was completed, the mixture was hardened at 150 ° C. for 4 hours and sealed with a resin to produce an electronic component device.
- the temperature was gradually cooled to room temperature, and then the presence of voids in the sealing resin layer, which was filled and sealed with the gap between the printed circuit board and the CSP knockage, was observed using an ultrasonic flaw detector. Then, a force when no voids were observed was evaluated as ⁇ , a case where one or two voids were observed was evaluated as ⁇ , and a case where more voids were observed was evaluated as X.
- the conduction failure rate of the electronic component device immediately after resin sealing was measured. After that, the thermal test Conduct a temperature cycle test of the above electronic component device at 40 ° C for 10 minutes and 125 ° C for 10 minutes using the device to check the electrical continuity after 1000 cycles. The conduction failure rate (%) for all 64 pads (substrate-side electrodes) was calculated.
- the CSP package was also peeled off on a hot plate heated to 200 ° C, and the CSP package was peeled off and returned to room temperature, but a cured product of the epoxy resin composition remaining at the connection portion Absorbent cotton containing a mixed solvent of equal amounts of N, N'-dimethylformamide and diethylene glycol dimethyl ether was allowed to stand in the residue portion of, and allowed to stand at room temperature (22 ° C) for 1 hour.
- the cotton wool is removed, the well is thoroughly wiped with methanol, the cured epoxy resin composition is peeled off, and the peelable electronic component device is again supplied with the solder paste to the pad portion of the wiring circuit board, and after melting the solder,
- the CSP package was mounted on a printed circuit board and the electrical conductivity was examined. Thereafter, the resin was sealed in the same manner as described above, and the repairability (rework) property was evaluated.
- the cured epoxy resin composition can be completely peeled off and the electrical connection is complete, the cured body can be peeled off with a small amount of the cured body, but the electrical connection is complete.
- the cured product remains slightly and can be peeled off, but the electrical connection is incomplete.
- the cured epoxy resin composition can hardly be peeled off and the electrical connection is incomplete. Is X.
- the liquid epoxy resin compositions of all Examples have a long pot life and, in combination with low viscosity, are excellent as one-part solventless liquid epoxy resin compositions of Voidless. .
- the formed sealing resin layer is free from voids and poor conduction, has a good drop impact resistance test result, and has excellent repairability. it is obvious.
- the liquid epoxy resin composition of the comparative example was inferior in repairability as compared with the power example product in which there was no conduction failure and was voidless.
- the present invention relates to a semiconductor package such as a BGA (ball-grid 'array) or CSP (chip-scale' package or chip-size 'package) or a connection electrode portion of a semiconductor component such as a semiconductor element.
- a semiconductor package such as a BGA (ball-grid 'array) or CSP (chip-scale' package or chip-size 'package) or a connection electrode portion of a semiconductor component such as a semiconductor element.
- the gap between the semiconductor package and the circuit board Provided is an electronic component device having good repairability, which is filled with a liquid epoxy resin composition and sealed with a resin.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Wire Bonding (AREA)
Abstract
Applications Claiming Priority (4)
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JP2004141583 | 2004-05-11 | ||
JP2004-141583 | 2004-05-11 | ||
JP2004357098A JP2005350646A (ja) | 2004-05-11 | 2004-12-09 | 電子部品装置 |
JP2004-357098 | 2004-12-09 |
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WO2005108483A1 true WO2005108483A1 (fr) | 2005-11-17 |
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PCT/JP2005/008520 WO2005108483A1 (fr) | 2004-05-11 | 2005-05-10 | Dispositif a composant electronique |
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Cited By (1)
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WO2012046636A1 (fr) * | 2010-10-05 | 2012-04-12 | 住友ベークライト株式会社 | Composition de résine liquide pour scellement et boîtier de semi-conducteur |
Families Citing this family (5)
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CN102347405A (zh) * | 2007-03-08 | 2012-02-08 | 医药及科学传感器公司 | 用于恶劣环境的发光二极管 |
EP2664651B1 (fr) * | 2011-01-11 | 2019-03-27 | Mitsubishi Chemical Corporation | Particules de polymère réticulé pour des résines époxy, composition de résine époxy et article époxy durci |
JP5958799B2 (ja) * | 2012-03-08 | 2016-08-02 | パナソニックIpマネジメント株式会社 | 半導体封止用液状エポキシ樹脂組成物とそれを用いた半導体装置 |
KR102049024B1 (ko) * | 2017-03-22 | 2019-11-26 | 주식회사 엘지화학 | 반도체 패키지용 수지 조성물과 이를 이용한 프리프레그 및 금속박 적층판 |
JP7333628B2 (ja) * | 2020-07-15 | 2023-08-25 | 協立化学産業株式会社 | 熱硬化性組成物 |
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JP2000323193A (ja) * | 1999-05-06 | 2000-11-24 | Sony Corp | 電子部品装置 |
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JP2003119454A (ja) * | 2001-10-16 | 2003-04-23 | Nec Corp | 電子部品装置 |
JP2003119251A (ja) * | 2001-10-16 | 2003-04-23 | Nitto Denko Corp | 液状エポキシ樹脂組成物 |
JP2004204047A (ja) * | 2002-12-25 | 2004-07-22 | Nitto Denko Corp | 液状エポキシ樹脂組成物 |
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- 2004-12-09 JP JP2004357098A patent/JP2005350646A/ja active Pending
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- 2005-05-10 WO PCT/JP2005/008520 patent/WO2005108483A1/fr active Application Filing
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JP2000129218A (ja) * | 1998-10-26 | 2000-05-09 | Nitto Denko Corp | シート状接着剤組成物およびそれを用いた電子部品装置ならびにそのリペアー方法 |
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WO2012046636A1 (fr) * | 2010-10-05 | 2012-04-12 | 住友ベークライト株式会社 | Composition de résine liquide pour scellement et boîtier de semi-conducteur |
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