WO2005096374A1 - Produit electrotechnique comprenant un element electrique et une masse de scellement pour l'isolation electrique de l'element, et procede de fabrication associe - Google Patents

Produit electrotechnique comprenant un element electrique et une masse de scellement pour l'isolation electrique de l'element, et procede de fabrication associe Download PDF

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Publication number
WO2005096374A1
WO2005096374A1 PCT/EP2004/053293 EP2004053293W WO2005096374A1 WO 2005096374 A1 WO2005096374 A1 WO 2005096374A1 EP 2004053293 W EP2004053293 W EP 2004053293W WO 2005096374 A1 WO2005096374 A1 WO 2005096374A1
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WIPO (PCT)
Prior art keywords
component
insulation layer
insulation
product
surface section
Prior art date
Application number
PCT/EP2004/053293
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German (de)
English (en)
Inventor
Herbert Schwarzbauer
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2005096374A1 publication Critical patent/WO2005096374A1/fr

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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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Definitions

  • Electrotechnical product with an electrical component and a potting compound for electrical insulation of the component and method for producing the product
  • the invention relates to an electrotechnical product with at least one electrical component and at least one potting compound for electrical insulation of at least one surface section of the component.
  • a method for producing the electrotechnical product is specified.
  • the electrotechnical product is a power semiconductor module in which the electrical component (power semiconductor component) is attached to a substrate.
  • the substrate (circuit carrier) is a DCB (Direct Copper Bonding) substrate with a carrier layer made of a ceramic, to which a metal layer made of copper is applied on both sides.
  • the ceramic of the carrier layer is, for example, aluminum oxide (A1 2 0 3 ) or aluminum nitride (A1N).
  • the power semiconductor component is soldered onto one of the metal layers.
  • a power semiconductor component is, for example, an IGBT or a diode.
  • the power semiconductor component is cast into a casting compound for electrical insulation.
  • an electrotechnical product with at least one electrical component and at least one casting compound for electrical insulation of at least one surface section of the component is specified.
  • the product is characterized in that an electrical insulation layer with an electrical insulation material is arranged between the casting compound and the surface section of the component.
  • a method for producing the product is also specified with the following method steps: a) providing a component with a surface section to be electrically insulated, b) producing the insulation layer with the insulation material on the
  • the basic idea of the invention is to ensure that an additional insulation measure
  • Damage to the potting compound can be tolerated, which is caused by a partial discharge.
  • the electrical insulation of the component is retained despite the damage to the casting compound.
  • the electrotechnical product is, for example, a module that is composed of several components.
  • the Components of the product are, for example, electrical components, such as semiconductor components, bonding wires, load current connections and electrical feed lines in the form of electrically conductive layers of a substrate of the product.
  • Other components of the module are, for example, substrates on which the electrical components are arranged or a housing in which the substrates with the components are located.
  • the casting compound can be a hardened epoxy resin.
  • the potting compound is preferably elastically deformable. As a result, the components of the module are not only electrically isolated using the casting compound. The potting compound also reduces mechanical stresses and operational vibrations between the components of the module.
  • the potting compound has, for example, a plastic in the form of an elastomer.
  • the casting compound has a gel.
  • the gel is a dimensionally stable, easily deformable system.
  • the gel preferably has a silicone gel.
  • the silicone gel is characterized by a low electrical conductivity. In addition, it is soft in a wide temperature range from below 0 ° C to over 200 ° C and in a wide variety
  • the silicone gel Adheres well to surfaces. If the silicone gel has a particularly high chemical purity, it also acts as an efficient diffusion barrier for ions, for example sodium ions (Na + ), chloride ions (Cl ⁇ ) and bromide ions (Br ⁇ ). These ions could migrate from the surroundings of the component in the direction of the surface section of the component to be isolated without the presence of a diffusion barrier due to the influence of the high electrical fields.
  • ions for example sodium ions (Na + ), chloride ions (Cl ⁇ ) and bromide ions (Br ⁇ ).
  • Insulation layer a diffusion barrier for at least one component of the component and / or for at least is a component of the casting compound and / or for at least one component of an environment of the product. This, for example, enhances the effect of the silicone gel as a diffusion barrier for ions from the environment. In addition, the insulation layer prevents
  • connection layer forms the surface section of the component to be insulated.
  • the cracking can release a gas (for example H 2 or N 2 ) which is enclosed in cavities in the connection layer.
  • the insulation layer acts as a diffusion barrier. The gas cannot penetrate the silicone gel. Without the insulation layer, the gases would spread in the form of bubbles in the silicone gel. If it heats up quickly, the gases that have entered the silicone gel may not escape quickly enough. A gas pressure in the silicone gel would increase.
  • the insulation layer has a strength in a special embodiment that is greater than a deformation force occurring at the surface section during operation of the product.
  • Strength is to be understood as an ability of the insulation layer to oppose a deformation resistance to the deformation force that occurs.
  • the deformation force is caused, for example, by gases which are released by the cracks in the connecting layer. Since the strength of the insulation layer is greater than this deformation force, the gases remain at an interface between the connection layer and the insulation layer
  • Insulation layer is non-positively connected to the surface portion of the component.
  • the embodiment is therefore the strength of the insulation layer and an adhesive strength of the insulation layer on the surface section.
  • the adhesive strength is a measure of the strength of the connection between the insulation layer and the surface section of the component. The adhesive strength is so great that the insulation layer does not separate from the surface section of the component during operation of the product. The connection between the insulation layer and the surface section of the component is retained.
  • An adhesion promoter layer can be provided to improve the adhesive strength of the insulation layer.
  • the adhesive layer has, for example, an adhesive.
  • the chemical resistance of the insulation layer is also of particular advantage. This applies in particular to the conditions under which the module is operated.
  • the insulation layer is resistant to at least one component of the component and / or to at least one component of the sealing compound and / or to at least one component of an environment of the product at a temperature of over 200 ° C. With this configuration, it is possible to use the product at a temperature of over 200 ° C. without the insulation layer being permanently damaged. The electrical insulation of the surface section of the component is ensured even under these conditions.
  • a layer thickness of the insulation layer necessary for this is selected.
  • the layer thickness depends on various factors, for example on
  • Insulation material of the insulation layer from the potting material of the potting compound or from the operating conditions of the Product. It has proven to be advantageous if the insulation layer has a layer thickness selected from the range from 50 ⁇ m up to and including 500 ⁇ m and in particular a layer thickness selected from the range from 100 ⁇ m up to and including 300 ⁇ m.
  • the insulation layer In order to achieve a necessary insulation effect of the insulation layer, an insulation layer that is as thick as possible can be applied to the surface section. A corresponding insulation effect can also be achieved with several partial insulation layers stacked one on top of the other.
  • the insulation layer therefore has a multilayer structure composed of at least two partial insulation layers arranged one above the other. This makes it possible to achieve an efficient insulation effect with a relatively lower total layer thickness of the insulation layer.
  • the component is arranged on a substrate and the insulation layer is guided over an edge of the component and / or of the substrate.
  • the component is a copper layer applied to a ceramic layer. It is precisely at the edges of such a structure, that is to say at the ceramic / copper connection points, that bubbles can form in the casting compound.
  • the fact that the insulation layer is guided onto the substrate over these edges results in a significant improvement in the reliability of such a module.
  • the improved reliability is expressed, for example, in an improved temperature-cycle stability. Compared to the prior art, more cycles with higher temperature strokes can be run through without causing permanent damage to the module.
  • Surface section of the component includes, in particular, applying the insulation material. For example, this will an electrically insulating varnish is applied.
  • the following method steps are carried out to produce the insulation layer on the surface section of the component: d) applying a precursor of the insulation material of the insulation layer and e) converting the precursor of the insulation material into the insulation material, the insulation layer being formed.
  • the preliminary stage of the insulation material consists, for example, of monomers of a plastic which are crosslinked during or after application to the surface section of the component. Crosslinking creates the insulation layer from the insulation material.
  • a solution of monomers of the plastic in a solvent is also conceivable. After removing the solvent, for example by
  • At least one method selected from the group of printing, casting, spraying and / or dipping is carried out.
  • thermal spraying is carried out for spraying.
  • a is used for printing
  • Inkjet printing process InkJet process
  • other methods are also conceivable, for example a screen printing method.
  • the methods mentioned are also suitable in the event that not a preliminary stage of the insulation material, but rather the insulation material itself, for example a lacquer, is applied to the surface section of the component.
  • the production of the insulation layer on the surface section of the component comprises laminating at least one insulation film on the surface section of the component.
  • the result is a product in which the insulation layer is formed by at least one insulation film laminated onto the surface section.
  • at least part of the insulation film is laminated onto the surface section of the component in such a way that a surface contour of the surface section of the component is imaged in a surface contour of the part of the insulation film that faces away from the surface section of the component.
  • the surface contour does not concern a roughness or waviness of the surface of the component.
  • the surface contour results, for example, from an edge of the component.
  • the surface contour shown is specified not only by the component alone, but also by the substrate on which the component is arranged.
  • the insulation film is laminated on under vacuum.
  • Laminating under vacuum creates a particularly firm and intimate contact between the insulation film and the component.
  • the insulating film preferably has a plastic selected from the group consisting of liquid crystalline polymer, organically modified ceramic, polyacrylate, polyimide, polyisocyanate, polyethylene, polyphenol, polyether ether kitone, polytetrafluoroethylene and / or epoxy. Mixtures of the plastics and / or copolymers from monomers of the plastics are also conceivable. So-called Liquid Cristal Polymers can be used as well as organically modified ceramics. Further process steps can be provided after the insulation layer has been produced on the component and before the potting compound has been applied. For example, an electrical contact area of the component can be exposed by creating a window in the insulation layer.
  • the window is generated, for example, by material ablation using laser ablation. For this purpose, for example, a C0 2 laser with an emission wavelength of 9.24 ⁇ m is used. A UV laser can also be used. You can also use to create the window
  • Photolithography process can be carried out.
  • a photosensitive insulation layer for example a photosensitive lacquer layer, is applied to the component.
  • the contact area of the component After the contact area of the component has been exposed, the contact area is electrically contacted.
  • a bonding wire is passed through the window of the insulation film and soldered onto the contact surface or bonded using ultrasound.
  • a metallization layer is preferably applied over a large area to the contact area and to the insulation layer.
  • the metallization layer serves as an electrical connecting line for electrically contacting the contact surface of the component.
  • it has a multilayer structure with partial metallization layers arranged one above the other.
  • Partial metallization layers consist, for example, of titanium, a titanium-tungsten alloy and of copper.
  • a layer sequence of Ti / TiW / Cu results.
  • a relatively thick copper layer can additionally be electrodeposited on the metallization layer.
  • any active and passive electrical component is conceivable as a component.
  • the component is, for example, an electrical connection layer or a electrical connection line.
  • the electrical component is preferably a semiconductor component.
  • the additional insulation effect is particularly advantageous in the case of components which are driven with high electrical voltages. Therefore, in a special embodiment of the semiconductor component, a power semiconductor component is selected from the group consisting of a diode, MOSFET, EGBT, tyristor or bipolar transistor. In the case of such components in particular, partial discharges can occur which permanently destroy the casting compound.
  • the components are subjected to high thermal loads. The high thermal load can lead to the cracking and spreading described above in a connecting layer and in the sealing compound.
  • Figures 1 to 3 each show a section of an electrical product in the lateral cross section.
  • FIG. 4 shows a method for producing the electrotechnical product.
  • the electrotechnical product 1 is an electrical module with an electrical component 2, which is arranged on a substrate 5 (FIG. 1).
  • the substrate 5 is a DCB substrate with a carrier layer 50 and an electrically conductive layer 51 made of copper applied to the carrier layer 50.
  • the carrier layer 50 consists of a ceramic.
  • the electrical component 2 is a power semiconductor component in the form of a MOSFET.
  • the power semiconductor component 2 is soldered onto the electrically conductive layer 51.
  • a potting compound 3 is provided for the electrical insulation of a surface section 20 of the component 2.
  • the potting compound 3 has a silicone gel.
  • an electrical insulation layer 4 is arranged between the sealing compound 3 and the surface section 20 of the component 2.
  • the insulation layer 4 acts as
  • the surface section 20 of the component 2 and the potting compound 3 are hermetically separated from one another by the insulation layer 4.
  • the insulation layer 4 is guided over an edge 52 of the electrically conductive layer 51.
  • the electrically conductive layer 51 and the carrier layer 50 of the substrate 5 are connected to one another at the edge 52. It is precisely at such an edge 52 that bubbles can form in the potting compound 3.
  • the insulation layer 4 is therefore guided over this edge 52.
  • the insulation layer 4 is formed by an insulation film laminated on the surface section 20 of the component 2.
  • a layer thickness 40 of the insulation layer 4, which is given by the film thickness of the insulation film 4, is approximately 100 ⁇ m.
  • the insulation film has a plastic made of polyimide.
  • a part of the insulation film 4 is laminated onto the surface section 20 of the component 2 such that a surface contour 25 of the component 2 is in one
  • the insulation film 4 follows the topography of the power semiconductor component 4 and the substrate 5. A height difference of up to over 500 ⁇ m is overcome. The insulation film 4 is laminated on under vacuum.
  • the insulation layer 4 has a multilayer structure with a plurality of partial insulation layers 41 arranged one above the other (FIG. 2).
  • the partial insulation layers 41 are each formed by a partial insulation film.
  • the power semiconductor component 2 is soldered onto the electrically conductive layer 51 in such a way that an electrical contact surface 21 of the power semiconductor component 2 is from the
  • Substrate 5 is facing away ( Figure 3).
  • One of the contacts of the power semiconductor component 3 source, gate or drain is electrically contacted via the contact surface 21.
  • the insulation layer 4 has one along the layer thickness
  • connection line 6 available.
  • the connecting line 6 is guided over the insulation layer 4.
  • the connecting line 6 is formed by a metallization layer.
  • the connecting line 6 is galvanically reinforced in the region 43 of the insulation layer 4.
  • the connecting line 6 has a greater thickness than a layer thickness of the connecting line 6 in the opening 42.
  • the connecting line 6 has an electrodeposition 61 made of copper.
  • the thickness of the electrodeposition 61 is approximately 500 ⁇ m. Both on the electrodeposition 61 and on the The connecting line 6 in the area of the opening 42, the electrically insulating casting compound 3 is applied.
  • a component is provided on a substrate for producing the electrotechnical product (FIG. 4).
  • the component 2 is soldered onto the DCB substrate 5.
  • the insulation film 4 is produced on the surface section 20 of the component 2 (FIG. 4, reference number 401).
  • the potting compound is then applied to the insulation layer 4 (FIG. 4, reference number 402).
  • an insulation film is laminated on under vacuum.
  • the insulation film is not only on the insulation
  • the opening 42 is created in the applied insulation layer 4 by material removal, so that the contact surface 21 of the component 2 is exposed.
  • the material is removed by laser ablation.
  • a metallization layer is applied to the exposed contact area 21 and in the area 43 of the insulation layer 4 in order to form the connecting line 6 in a vapor deposition process. Then the
  • Metallization layer which is located on the insulation layer 6, galvanically reinforced with the help of copper.
  • a galvanic deposition 61 made of copper is produced. The galvanic deposition leads to a required current carrying capacity of the connecting line 6.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

L'invention concerne un produit électrotechnique (1) comprenant au moins un élément électrique (2) et au moins une masse de scellement (3) pour l'isolation électrique d'au moins une partie superficielle (20) de l'élément. L'invention est caractérisée en ce qu'entre la masse de scellement et la partie superficielle de l'élément se trouve une couche d'isolation électrique (4) en matériau d'isolation électrique. L'élément est notamment un composant semi-conducteur de puissance et la masse de scellement un gel silicone. La pellicule isolante est formée notamment d'une feuille isolante stratifiée. La couche d'isolation sert de barrière de diffusion, de sorte que des composants liquides et/ou gazeux ou bien des impuretés de l'élément ne peuvent pas pénétrer dans le gel silicone où ils pourraient provoquer la formation de bulles et de fissures en cas de changement de pression et/ou de température.
PCT/EP2004/053293 2004-03-15 2004-12-06 Produit electrotechnique comprenant un element electrique et une masse de scellement pour l'isolation electrique de l'element, et procede de fabrication associe WO2005096374A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004012547 2004-03-15
DE102004012547.3 2004-03-15

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Publication Number Publication Date
WO2005096374A1 true WO2005096374A1 (fr) 2005-10-13

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009010440A1 (fr) 2007-07-17 2009-01-22 Siemens Aktiengesellschaft Composant électronique et dispositif à haute résistance d'isolement et procédé de production de ceux-ci
EP2107604A3 (fr) * 2008-04-05 2010-11-03 SEMIKRON Elektronik GmbH & Co. KG Module semi-conducteur de puissance doté d'un circuit étanche hermétique et son procédé de fabrication
DE102012222012A1 (de) * 2012-11-30 2014-06-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
WO2015018721A1 (fr) * 2013-08-07 2015-02-12 Siemens Aktiengesellschaft Circuit électronique de puissance présentant un contact électrique planaire
DE102010024520B4 (de) * 2010-06-21 2017-08-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung der thermo-mechanischen Beständigkeit eines Metall-Keramik-Substrats

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009010440A1 (fr) 2007-07-17 2009-01-22 Siemens Aktiengesellschaft Composant électronique et dispositif à haute résistance d'isolement et procédé de production de ceux-ci
EP2107604A3 (fr) * 2008-04-05 2010-11-03 SEMIKRON Elektronik GmbH & Co. KG Module semi-conducteur de puissance doté d'un circuit étanche hermétique et son procédé de fabrication
US8324717B2 (en) 2008-04-05 2012-12-04 Semikron Elektronik Gmbh & Co., Kg Power semiconductor module with a hermetically tight circuit arrangement and method for producing such a module
DE102010024520B4 (de) * 2010-06-21 2017-08-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung der thermo-mechanischen Beständigkeit eines Metall-Keramik-Substrats
DE102012222012A1 (de) * 2012-11-30 2014-06-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
DE102012222012B4 (de) * 2012-11-30 2017-04-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und ein Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
WO2015018721A1 (fr) * 2013-08-07 2015-02-12 Siemens Aktiengesellschaft Circuit électronique de puissance présentant un contact électrique planaire

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