WO2005095670A3 - Procedes d'elimination de depots de surface par enceinte a distance - Google Patents

Procedes d'elimination de depots de surface par enceinte a distance Download PDF

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Publication number
WO2005095670A3
WO2005095670A3 PCT/US2005/010691 US2005010691W WO2005095670A3 WO 2005095670 A3 WO2005095670 A3 WO 2005095670A3 US 2005010691 W US2005010691 W US 2005010691W WO 2005095670 A3 WO2005095670 A3 WO 2005095670A3
Authority
WO
WIPO (PCT)
Prior art keywords
surface deposits
removing surface
remote chamber
chamber methods
remote
Prior art date
Application number
PCT/US2005/010691
Other languages
English (en)
Other versions
WO2005095670A2 (fr
Inventor
Herbert Harold Sawin
Bo Bai
Original Assignee
Du Pont
Massachusetts Inst Technology
Herbert Harold Sawin
Bo Bai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Massachusetts Inst Technology, Herbert Harold Sawin, Bo Bai filed Critical Du Pont
Priority to JP2007505281A priority Critical patent/JP2007530792A/ja
Priority to BRPI0508204-8A priority patent/BRPI0508204A/pt
Priority to EP05734780A priority patent/EP1733071A2/fr
Publication of WO2005095670A2 publication Critical patent/WO2005095670A2/fr
Publication of WO2005095670A3 publication Critical patent/WO2005095670A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Public Health (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

La présente invention concerne un procédé de nettoyage par plasma amélioré, un procédé permettant d'éliminer des dépôts de surface se trouvant sur une surface, telle que l'intérieur d'une chambre de dépôt utilisée pour fabriquer des dispositifs électroniques. L'amélioration décrite dans cette invention consiste en un prétraitement au plasma enrichi en fluorocarbone de la surface intérieure de la voie de passage depuis l'enceinte à distance vers les dépôts de surface.
PCT/US2005/010691 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance WO2005095670A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007505281A JP2007530792A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法
BRPI0508204-8A BRPI0508204A (pt) 2004-03-24 2005-03-24 método de remoção de depósitos de uma superfìcie
EP05734780A EP1733071A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
US60/640,444 2004-12-30
US60/640,833 2004-12-30

Publications (2)

Publication Number Publication Date
WO2005095670A2 WO2005095670A2 (fr) 2005-10-13
WO2005095670A3 true WO2005095670A3 (fr) 2006-05-04

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 WO2005098086A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres
PCT/US2005/010691 WO2005095670A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance
PCT/US2005/010693 WO2005090638A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 WO2005098086A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010693 WO2005090638A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

Country Status (6)

Country Link
EP (3) EP1733072A2 (fr)
JP (3) JP2007531289A (fr)
KR (3) KR20070037434A (fr)
BR (3) BRPI0508204A (fr)
TW (3) TWI281714B (fr)
WO (3) WO2005098086A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (fr) * 1994-07-21 1996-02-21 Applied Materials, Inc. Procédé et dispositif de nettoyage d'une chambre de dépÔt
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
RU2008108010A (ru) * 2005-08-02 2009-09-10 Массачусетс Инститьют Оф Текнолоджи (Us) Способ применения фторида серы для удаления поверхностных отложений
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US10240230B2 (en) * 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
SG11201605356PA (en) 2013-12-30 2016-07-28 Chemours Co Fc Llc Chamber cleaning and semiconductor etching gases
SG11202106864TA (en) * 2018-12-25 2021-07-29 Showa Denko Kk Adhesion removal method and film-forming method
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
CN116145106A (zh) * 2023-02-21 2023-05-23 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP1304731A1 (fr) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Procede de nettoyage d'un dispositif cvd et dispositif nettoyant afferent

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP1304731A1 (fr) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Procede de nettoyage d'un dispositif cvd et dispositif nettoyant afferent

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ALLGOOD C ET AL: "Evaluation of octafluorocyclobutane as a chamber clean gas in a plasma-enhanced silicon dioxide chemical vapor deposition reactor", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 150, no. 2, 2003, pages G122 - G126, XP002280013, ISSN: 0013-4651 *
OH C H ET AL: "Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry", SURFACE & COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 171, no. 1-3, 1 July 2003 (2003-07-01), pages 267 - 272, XP002362634, ISSN: 0257-8972 *

Also Published As

Publication number Publication date
EP1733071A2 (fr) 2006-12-20
TW200623251A (en) 2006-07-01
WO2005098086A2 (fr) 2005-10-20
JP2007531289A (ja) 2007-11-01
TWI284929B (en) 2007-08-01
TWI281715B (en) 2007-05-21
KR20070037434A (ko) 2007-04-04
BRPI0508204A (pt) 2007-07-17
WO2005090638A9 (fr) 2006-01-26
WO2005090638A8 (fr) 2006-11-16
EP1737998A2 (fr) 2007-01-03
WO2005090638A3 (fr) 2006-04-13
TW200623240A (en) 2006-07-01
JP2007531288A (ja) 2007-11-01
JP2007530792A (ja) 2007-11-01
WO2005098086A3 (fr) 2006-05-04
EP1733072A2 (fr) 2006-12-20
KR20070040748A (ko) 2007-04-17
WO2005090638A2 (fr) 2005-09-29
BRPI0508214A (pt) 2007-07-17
BRPI0508205A (pt) 2007-07-17
TWI281714B (en) 2007-05-21
WO2005095670A2 (fr) 2005-10-13
KR20070043697A (ko) 2007-04-25
TW200623281A (en) 2006-07-01

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