WO2005095670A2 - Procedes d'elimination de depots de surface par enceinte a distance - Google Patents

Procedes d'elimination de depots de surface par enceinte a distance Download PDF

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Publication number
WO2005095670A2
WO2005095670A2 PCT/US2005/010691 US2005010691W WO2005095670A2 WO 2005095670 A2 WO2005095670 A2 WO 2005095670A2 US 2005010691 W US2005010691 W US 2005010691W WO 2005095670 A2 WO2005095670 A2 WO 2005095670A2
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WO
WIPO (PCT)
Prior art keywords
gas mixture
fluorocarbon
oxygen
activated
chamber
Prior art date
Application number
PCT/US2005/010691
Other languages
English (en)
Other versions
WO2005095670A3 (fr
Inventor
Herbert Harold Sawin
Bo Bai
Original Assignee
Massachusetts Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute Of Technology filed Critical Massachusetts Institute Of Technology
Priority to JP2007505281A priority Critical patent/JP2007530792A/ja
Priority to BRPI0508204-8A priority patent/BRPI0508204A/pt
Priority to EP05734780A priority patent/EP1733071A2/fr
Publication of WO2005095670A2 publication Critical patent/WO2005095670A2/fr
Publication of WO2005095670A3 publication Critical patent/WO2005095670A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Definitions

  • the present invention relates to methods for removing surface deposits by using an activated gas created by remotely activating a gas mixture comprising of oxygen and fluorocarbon. More specifically, this invention involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote chamber to the surface deposits.
  • Remote plasma sources for the production of atomic fluorine are widely used for chamber cleaning in the semiconductor processing industry, particularly in the cleaning of chambers used for Chemical Vapor Deposition (CVD) and Plasma Enhanced Chemical Vapor Deposition
  • PECVD plasma-on-assisted chemical vapor deposition
  • the use of remote plasma sources avoids some of the erosion of the interior chamber materials that occurs with in situ chamber cleans in which the cleaning is performed by creating a plasma discharge within the PECVD chamber.
  • capacitively and inductively coupled RF as well as microwave remote sources have been developed for these sorts of applications, the industry is rapidly moving toward transformer coupled inductively coupled sources in which the plasma has a torroidal configuration and acts as the secondary of the transformer.
  • the use of lower frequency RF power allows the use of magnetic cores which enhance the inductive coupling with respect to capacitive coupling; thereby allowing the more efficient transfer of energy to the plasma without excessive ion bombardment which limits the lifetime of the remote plasma source chamber interior.
  • the present invention relates to a method for removing surface deposits, said method comprising: (a) activating in a remote chamber a pretreatment gas mixture comprising fluorocarbon and optionally oxygen wherein the molar ratio of oxygen and fluorocarbon is less than 1 :1 ; and thereafter (b) contacting said activated pretreatment gas mixture with at least a portion of interior surface of a pathway from the remote chamber to the surface deposits; (c) activating in the remote chamber a cleaning gas mixture comprising oxygen and fluorocarbon wherein the molar ratio of oxygen and fluorocarbon is at least 1 :3; and thereafter (d) passing said activated cleaning gas mixture through said pathway; (e) contacting said activated cleaning gas mixture with the surface deposits and thereby removing at least some of said surface deposits.
  • Figure 1 Schematic diagram of an apparatus useful for carrying out the present process.
  • Figure 2. Plot of the effect of transient oxygen shut off to Zyron® C318N4 (C F 8 ) on (a) gas emission, measured by FTIR, (b) etching rate.
  • Surface deposits removed in this invention comprise those materials commonly deposited by chemical vapor deposition or plasma- enhanced chemical vapor deposition or similar processes. Such materials include silicon, doped silicon, silicon nitride, tungsten, silicon dioxide, silicon oxynitride, silicon carbide and various silicon oxygen compounds referred to as low K materials, such as FSG (fluorosilicate glass) and SiCOH or PECVD OSG including Black Diamond (Applied Materials), Coral (Novellus Systems) and Aurora (ASM International).
  • FSG fluorosilicate glass
  • SiCOH or PECVD OSG including Black Diamond (Applied Materials), Coral (Novellus Systems) and Aurora (ASM International).
  • One embodiment of this invention is removing surface deposits from the interior of a process chamber that is used in fabricating electronic devices.
  • Such process chamber could be a Chemical Vapor Deposition (CVD) chamber or a Plasma Enhanced Chemical Vapor Deposition (PECVD) chamber.
  • the process of the present invention involves an activating step using sufficient power to form an activated gas mixture. Activation may be accomplished by any means allowing for the achievement of dissociation of a large fraction of the feed gas, such as: RF energy, DC energy, laser illumination and microwave energy.
  • the neutral temperature of the resulting plasma depends on the power and the residence time of the gas mixture in the remote chamber. Under certain power input and conditions, neutral temperature will be higher with longer residence time.
  • preferred neutral temperature of activated cleaning gas mixture is over about 3,000 K.
  • the activated gas is formed in a remote chamber that is outside of the process chamber, but in close proximity to the process chamber.
  • the remote chamber is connected to the process chamber by any means allowing for transfer of the activated gas from the remote chamber to the process chamber.
  • the remote chamber and means for connecting the remote chamber with the process chamber are constructed of materials known in this field to be capable of containing activated gas mixtures. For instance, aluminum and stainless steel are commonly used for the chamber components.
  • AI 2 O 3 is coated on the interior surface to reduce the surface recombination.
  • a pretreatment gas mixture that is activated to treat the interior surface of the pathway through which an activated cleaning gas passes to the process chamber comprises fluorocarbon and optionally oxygen.
  • a preferred pretreatment gas mixture has oxygen verses fluorocarbon molar ratio of less than 1 :1.
  • a more preferred pretreatment gas mixture contains no oxygen.
  • a cleaning gas mixture that is activated to remove the surface deposition comprises oxygen and fluorocarbon.
  • a preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least 1:3.
  • a more preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least from about 2:1 to about 20:1.
  • the fluorocarbon of the invention is herein referred to as a compound comprising of C and F.
  • Preferred fluorocarbon in this invention is perfluorocarbon compound.
  • a perfluorocarbon compound in this invention is herein referred to as a compound consisting of C, F and optionally oxygen.
  • Such perfluorocarbon compounds include, but are not limited to tetrafluoromethane, hexafluoroethane, octafluoropropane, hexafluorocyclopropane decafluorobutane, octafluorocyclobutane, carbonyl fluoride and octafluorotetrahydrofuran.
  • the gas mixture that is activated to form either the pretreatment gas mixture or the cleaning gas mixture may further comprise carrier gases such as argon and helium.
  • a preferred embodiment of the present invention is a method for removing surface deposits from the interior of a process chamber that is used in fabricating electronic devices, said method comprising: (a) activating in a remote chamber a pretreatment gas mixture comprising perfluorocarbon compound and no oxygen; (b) contacting said activated pretreatment gas mixture with at least a portion of interior surface of a pathway from the remote chamber to the surface deposits; (c) activating in the remote chamber a cleaning gas mixture comprising oxygen and perfluorocarbon compound, wherein the molar ratio of oxygen and perfluorocarbon compound is at least 1 :3, using sufficient power for a sufficient time such that said gas mixture reaches a neutral temperature of at least about 3,000 K to form an activated cleaning gas mixture; and thereafter (d) contacting said activated cleaning gas mixture with the interior of said deposition chamber and thereby removing at least some of said surface deposits.
  • fluorocarbon rich plasma it is meant that the gas mixture comprising fluorocarbon and optionally oxygen wherein the molar ratio of oxygen and fluorocarbon is less than about 1 :1 is activated to form a plasma.
  • the cleaning gas mixture is composed of
  • a pretreatment gas mixture consisting of fluorocarbon and Ar is activated and passes through the heat exchanger, a portion of pathway from the remote chamber to the surface deposits. This treatment can also increase the etching rate.
  • the drawbacks of the perfluorocarbon compound i.e. global warming gases emission and polymer deposition, can be overcome. In the cleaning process of this invention, no significant polymer depositions on the interior surface of process chamber was found. The global warming gas emissions were also very low as shown in Figure 2a.
  • the following Examples are meant to illustrate the invention and are not meant to be limiting:
  • Fig. 1 shows a schematic diagram of the remote plasma source and apparatus used to measure the etching rates, plasma neutral temperatures, and exhaust emissions.
  • the remote plasma source is a commercial toroidal-type MKS ASTRON®ex reactive gas generator unit made by MKS Instruments, Andover, MA, USA.
  • the feed gases e.g. oxygen, fluorocarbon, Argon
  • the oxygen is manufactured by Airgas with 99.999% purity.
  • the fluorocarbon is Zyron® C318N4 with minimum 99.99 vol % of octafluorocyclobutane, and Zyron® 8020 with minimum 99.9 vol % of octafluorocyclobutane, both are manufactured by DuPont and supplied in cylinders.
  • Nitrogen source in the examples is nitrogen gas manufactured by Airgas with grade of 4.8 and Argon is manufactured by Airgas with grade of 5.0.
  • the activated gas then passed through an aluminum water-cooled heat exchanger to reduce the thermal loading of the aluminum process chamber.
  • the surface deposits covered wafer was placed on a temperature controlled mounting in the process chamber.
  • the neutral temperature is measured by Optical Emission Spectroscopy (OES), in which rovibrational transition bands of diatomic species like C 2 and N 2 are theoretically fitted to yield neutral temperature. See also B. Bai and H. Sawin, Journal of Vacuum Science & Technology A 22 (5), 2014 (2004), herein incorporated as a reference.
  • the etching rate of the surface deposits by the activated gas is measured by interferometry equipment in the process chamber.
  • N 2 gas is added at the entrance of the pump both to dilute the products to a proper concentration for FTIR measurement and TO re ⁇ uce tne nang-up o ⁇ pro ⁇ ucis in the pump in the case that wet pump is used.
  • FTIR was used to measure the concentration of species in the pump exhaust.
  • Example 1 It was discovered that after certain periods of use, the etching rate of Zyron® C318N4 will drop to approximately one half of the previous rate. At the same time a much larger amount of COF 2 in the effluent gases was observed. It was also found that rapid closing and opening of the oxygen valve for a period of a few seconds could increase the etching rate back to the previous level.
  • the feeding gas composed of O 2 , Zyron® C318N4 (C 4 F ⁇ ) and Ar, wherein O 2 flow rate is 1750 seem, Ar flow rate is 2000 seem, C F ⁇ flow rate is 250 seem. Chamber pressure is 2 torr.
  • the 400 KHz 8.9 KW RF power was turned on at -800 seconds and the feeding gas was activated to a neutral temperature estimated to be 5000 K.
  • the activated gas then entered the process chamber and etched the SiO 2 surface deposits on the mounting with the temperature controlled at 100° C.
  • the oxygen valve was shut off for two seconds and then reopened.
  • the COF 2 emission decreased abruptly and the CO 2 emission increased to maintain the carbon mass balance.
  • COF 2 concentration slowly increased while CO 2 concentration slowly decreased.
  • the COF 2 and CO 2 concentration of emission leveled and did not appear to be returning to the prior levels before the O 2 induced transition.
  • the results are shown in Figure 2a.
  • etching rate jumped up at the transient closing off of oxygen.
  • the etching rate then slowly decreased and leveled off corresponding to the COF 2 and CO 2 concentration change in the emission gases.
  • the RF power was turned off at 450 seconds.
  • Example 2 This experiment was designed to measure the effect of the fluorocarbon rich plasma treatment on the interior surface of the apparatus.
  • the etching rate was measured as 900 Angstrom/min according to the conditions described below before the fluorocarbon rich plasma treatment.
  • the feeding gas composed of O 2 , Zyron® 8020 (C F 8 ) and Ar, wherein O 2 flow rate is 1750 seem, Ar flow rate is 2000 seem, C 4 F 8 flow rate is 250 seem. Chamber pressure is 2 torr.
  • the feeding gas was activated by 400 KHz 8.8 KW RF power to a neutral temperature of estimated to be 5000 K.
  • the activated gas then passed through the heat exchanger connection, entered the process chamber and etched the SiO 2 surface deposits on the mounting with the temperature controlled at 100° C.
  • the feeding gas mixture for the treatment consisted of 250 seem Zyron® 8020 and 2000 seem Ar. After activated by 400 KHz 7.0 KW RF power, the gas mixture passed through the heat exchanger for 2 minutes. After the treatment, the etching rate was measured again under the same condition as before the treatment. The etching rate was found to be 1350 Angstrom/min, 30% higher than the one before the treatment.
  • Example 3 This experiment was designed to measure the effect of the fluorocarbon rich plasma treatment on the interior surface of the apparatus. The etching rate was measured as 850 Angstrom/min according to the conditions described below before the fluorocarbon rich plasma treatment.
  • the feeding gas composed of O 2 , C 3 F 8 and Ar, wherein O 2 flow rate is 1000 seem, Ar flow rate is 2750 seem, C 3 F 8 flow rate is 250 seem.
  • Chamber pressure is 2 torr.
  • the feeding gas was activated by 400 KHz 6.0 KW RF power to a neutral temperature of estimated to be 4500 K.
  • the activated gas then passed through the heat exchanger connection, entered the process chamber and etched the SiO 2 surface deposits on the mounting with the temperature controlled at 100° C.
  • the heat exchanger connection between the remote plasma source and the process chamber was treated by fluorocarbon rich plasma.
  • the feeding gas mixture for the treatment consisted of 250 seem C 3 F 8 and 2750 seem Ar.
  • the gas mixture passed through the heat exchanger for two minutes. After the treatment, the etching rate was measured again under the same condition as before the treatment. The etching rate was found to be 1150 Angstrom/min, 30% higher than the one before the treatment.

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Abstract

La présente invention concerne un procédé de nettoyage par plasma amélioré, un procédé permettant d'éliminer des dépôts de surface se trouvant sur une surface, telle que l'intérieur d'une chambre de dépôt utilisée pour fabriquer des dispositifs électroniques. L'amélioration décrite dans cette invention consiste en un prétraitement au plasma enrichi en fluorocarbone de la surface intérieure de la voie de passage depuis l'enceinte à distance vers les dépôts de surface.
PCT/US2005/010691 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance WO2005095670A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007505281A JP2007530792A (ja) 2004-03-24 2005-03-24 表面堆積物を除去するための遠隔チャンバ方法
BRPI0508204-8A BRPI0508204A (pt) 2004-03-24 2005-03-24 método de remoção de depósitos de uma superfìcie
EP05734780A EP1733071A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
US60/640,444 2004-12-30
US60/640,833 2004-12-30

Publications (2)

Publication Number Publication Date
WO2005095670A2 true WO2005095670A2 (fr) 2005-10-13
WO2005095670A3 WO2005095670A3 (fr) 2006-05-04

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Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2005/010692 WO2005098086A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres
PCT/US2005/010691 WO2005095670A2 (fr) 2004-03-24 2005-03-24 Procedes d'elimination de depots de surface par enceinte a distance
PCT/US2005/010693 WO2005090638A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

Family Applications Before (1)

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PCT/US2005/010692 WO2005098086A2 (fr) 2004-03-24 2005-03-24 Procedes telecommandes destines a eliminer des depots de surface dans des chambres

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010693 WO2005090638A2 (fr) 2004-03-24 2005-03-24 Procede a chambre separee pour l'elimination des depots de surface

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EP (3) EP1733072A2 (fr)
JP (3) JP2007531289A (fr)
KR (3) KR20070037434A (fr)
BR (3) BRPI0508204A (fr)
TW (3) TWI281714B (fr)
WO (3) WO2005098086A2 (fr)

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US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems

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EP0697467A1 (fr) * 1994-07-21 1996-02-21 Applied Materials, Inc. Procédé et dispositif de nettoyage d'une chambre de dépÔt
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
RU2008108010A (ru) * 2005-08-02 2009-09-10 Массачусетс Инститьют Оф Текнолоджи (Us) Способ применения фторида серы для удаления поверхностных отложений
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US10240230B2 (en) * 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
SG11201605356PA (en) 2013-12-30 2016-07-28 Chemours Co Fc Llc Chamber cleaning and semiconductor etching gases
SG11202106864TA (en) * 2018-12-25 2021-07-29 Showa Denko Kk Adhesion removal method and film-forming method
CN116145106A (zh) * 2023-02-21 2023-05-23 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

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EP1304731A1 (fr) * 2001-03-22 2003-04-23 Research Institute of Innovative Technology for the Earth Procede de nettoyage d'un dispositif cvd et dispositif nettoyant afferent

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Title
ALLGOOD C ET AL: "Evaluation of octafluorocyclobutane as a chamber clean gas in a plasma-enhanced silicon dioxide chemical vapor deposition reactor" JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 150, no. 2, 2003, pages G122-G126, XP002280013 ISSN: 0013-4651 *
OH C H ET AL: "Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry" SURFACE & COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 171, no. 1-3, 1 July 2003 (2003-07-01), pages 267-272, XP002362634 ISSN: 0257-8972 cited in the application *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems

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EP1733071A2 (fr) 2006-12-20
TW200623251A (en) 2006-07-01
WO2005098086A2 (fr) 2005-10-20
WO2005095670A3 (fr) 2006-05-04
JP2007531289A (ja) 2007-11-01
TWI284929B (en) 2007-08-01
TWI281715B (en) 2007-05-21
KR20070037434A (ko) 2007-04-04
BRPI0508204A (pt) 2007-07-17
WO2005090638A9 (fr) 2006-01-26
WO2005090638A8 (fr) 2006-11-16
EP1737998A2 (fr) 2007-01-03
WO2005090638A3 (fr) 2006-04-13
TW200623240A (en) 2006-07-01
JP2007531288A (ja) 2007-11-01
JP2007530792A (ja) 2007-11-01
WO2005098086A3 (fr) 2006-05-04
EP1733072A2 (fr) 2006-12-20
KR20070040748A (ko) 2007-04-17
WO2005090638A2 (fr) 2005-09-29
BRPI0508214A (pt) 2007-07-17
BRPI0508205A (pt) 2007-07-17
TWI281714B (en) 2007-05-21
KR20070043697A (ko) 2007-04-25
TW200623281A (en) 2006-07-01

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