WO2005036453A1 - Carte incorporant un semiconducteur - Google Patents

Carte incorporant un semiconducteur Download PDF

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Publication number
WO2005036453A1
WO2005036453A1 PCT/JP2004/015185 JP2004015185W WO2005036453A1 WO 2005036453 A1 WO2005036453 A1 WO 2005036453A1 JP 2004015185 W JP2004015185 W JP 2004015185W WO 2005036453 A1 WO2005036453 A1 WO 2005036453A1
Authority
WO
WIPO (PCT)
Prior art keywords
card
adhesive
resin
semiconductor
built
Prior art date
Application number
PCT/JP2004/015185
Other languages
English (en)
Japanese (ja)
Inventor
Akira Urakami
Original Assignee
Japan Gore-Tex Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Gore-Tex Inc. filed Critical Japan Gore-Tex Inc.
Publication of WO2005036453A1 publication Critical patent/WO2005036453A1/fr

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G06K19/07728—Physical layout of the record carrier the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745—Mounting details of integrated circuit chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor built-in card represented by an IC card and a memory card.
  • semiconductors used in cards with built-in semiconductors are required to have a large capacity and a small size, and a board on which such a semiconductor is mounted (semiconductor mounting board) is required.
  • the card frame for holding is required to be thin and small.
  • -notes are used for exchanging data between digital cameras and computers, etc., and devices (digital cameras and computers) are used.
  • the card frame is grasped with a finger.
  • the card frame portion is gripped by a finger when the card is taken out of the card case.
  • the card frame portion is usually gripped by a finger due to its usage, and at this time, stress is applied vertically to the card frame surface.
  • Card frame When a part of the semiconductor device is gripped by a finger and the other part is held by a slot of the device, the semiconductor built-in force K is subjected to bending stress.
  • a semiconductor mounting board has a high strength and is hardly deformed even when subjected to the bending stress as described above.
  • the force frame is usually smaller in strength than the semiconductor mounting board and easily deformable, when the semiconductor built-in force is subjected to the above-mentioned bending stress, the force of the card frame is reduced.
  • Techniques that can improve the overall strength of K include, for example,
  • a method of introducing and reinforcing a frame is disclosed in Japanese Patent Application Laid-Open No. 5_968889.
  • the first card frame holding the semiconductor mounting substrate is replaced with the second card frame.
  • There are a covering technique Japanese Patent Application Laid-Open No. Hei 6-15992
  • a method of introducing a rigid support into the card frame to reinforce it Japanese Patent Application Laid-Open No. Hei 7-17575. If these technologies are applied, it is possible to suppress the deformation of the card frame (the entire card with a built-in semiconductor) when receiving the above bending stress, and to suppress the separation between the semiconductor mounting board and the card frame. is there.
  • Japanese Patent Application Laid-Open Nos. Hei 5-966989 and Hei 6-96 introduce a reinforcing material such as a metal frame, a second card frame, and a support.
  • the technology of Japanese Patent Application Laid-Open No. 15992/1995 and Japanese Patent Application Laid-Open No. 7-171575 meet the demand for miniaturization and thinning in order to increase the size and thickness of the entire semiconductor built-in card. Is not enough.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to meet the demand for miniaturization and thinning, and to reduce the distance between a semiconductor mounting board and a card frame when a bending stress is applied.
  • An object of the present invention is to provide a semiconductor built-in card in which peeling of the semiconductor is highly suppressed. Disclosure of the invention
  • the card with a built-in semiconductor of the present invention which has achieved the above object, includes a substrate on which a semiconductor is mounted and a card frame as constituent elements, and a stress relaxation layer is interposed between the substrate and the force frame.
  • the gist exists where it is.
  • the stress relaxation layer is preferably made of a resin film.
  • the resin film has a tensile modulus of 1 to 130 MPa and a tensile elongation at break of 5%. It is desirable that this is the case.
  • the stress relaxation layer preferably has a porous structure-more preferably, is more preferably made of an expanded porous polytetrafluoroethylene (PTFE film). It is recommended that the porosity of the stretched porous polytetrafluoroethylene film be 30 to 95%, and the thickness of the resin film constituting the stress relaxation layer is 0%.
  • the adhesive layer A is interposed between the stress relieving layer and the substrate, and also between the stress relieving layer and the card frame. It is a preferred embodiment of the present invention that the adhesive layer B is interposed and the stress relaxation layer is fixed to the substrate and the card frame by the adhesive layers A and B.
  • the peel strength at interface with adhesive layer A is, for example, 0.4 N / mm or more.
  • the adhesive layer A and the adhesive layer B may be composed of different adhesives.
  • the adhesive of the adhesive layer A is a thermosetting resin (particularly preferably an epoxy resin), and the adhesive of the adhesive layer B is a thermoplastic. Resins (particularly preferably polyester resins) may be used. It is recommended that the product of the tensile modulus and the thickness of the adhesive layer B be 50 MPa amm or less.
  • the adhesive layer A and / or the adhesive layer B those obtained by filling an adhesive in pores of an expanded porous polytetrafluoroethylene film are usually used.
  • film in this specification is a concept that includes a so-called “sheet”.
  • FIG. 1 is a schematic diagram showing an example of the structure of a semiconductor built-in card (memory card) of the present invention.
  • FIG. 2 is a sectional view taken along line 11 of the memory card of FIG.
  • FIG. 3 is an enlarged view showing a state where the semiconductor built-in force of the present invention is subjected to bending stress.
  • the present inventor has realized the above-described semiconductor built-in card using a card frame having a lower strength than the semiconductor mounting substrate.
  • the stress relaxation layer is formed of the above-mentioned JP-A-5-96889, JP-A-6-15992, and JP-A-7-171975.
  • the thickness of the semiconductor built-in card can be reduced. Since the second card frame is not required as in Japanese Patent Publication No.
  • FIG. 1 shows an example of a semiconductor built-in card (memory card) of the present invention.
  • 10 is a semiconductor built-in card
  • FIG. 11 is a card frame
  • 12 is a semiconductor mounting board
  • 13 is a connection terminal.
  • FIG. 2 is a cross-sectional view taken along the line 11 in FIG. 1, and reference numeral 14 denotes a stress relaxation layer (layers to be described later are not shown).
  • a stress relaxation layer layers to be described later are not shown.
  • the above-mentioned semiconductor mounting board is one in which one or more semiconductor elements are mounted on a board (circuit board) on which a circuit is formed.
  • the semiconductor mounting board used for the semiconductor built-in card of the present invention is not particularly limited.
  • a card used for a semiconductor built-in card such as a conventionally known memory card or IC card can be applied as it is.
  • examples of semiconductor chips include a memory made of silicon arsenic arsenic and a computer with a V-chip microphone.
  • a memory made of silicon arsenic arsenic and a computer with a V-chip microphone.
  • F E R AM F e r o e l e c t r i c R AM
  • a CPU Central Integrated Circuit
  • resistors and capacitors are mounted on a semiconductor mounting board together with such a semiconductor element.
  • a glass fiber-epoxy resin composite (so-called glass epoxy) or glass BT (bismalei)
  • Known materials such as medium triazine), ceramics and polyimide film are applicable.
  • a sealing resin As the sealing resin, a conventionally known epoxy resin compound or the like can be applied.
  • the thickness of the semiconductor mounting board after resin sealing is generally 3 mm or less.
  • connection terminals for transmitting and receiving information to and from the outside should be provided on the opposite side of the component mounting side of the semiconductor mounting board.
  • Figure 1 illustrates this aspect.
  • the connection terminals are not limited to these locations, and may be formed on the component mounting surface side when the semiconductor mounting board has components mounted on both sides or depending on the structure of the semiconductor built-in card.
  • a non-contact type memory card or IC card a non-contact type data communication means having an antenna or the like can be provided instead of the connection terminal.
  • the card frame is generally made of resin.
  • a resin that satisfies the function as a frame of a semiconductor built-in card can be obtained. it can.
  • the card frame is generally formed by an injection molding method, a resin suitable for injection molding can be preferably used. Specific examples include ABS (acrylonitrile-butadiene-styrene), polycarbonate, polyester (polybutylene terephthalate, etc.).
  • ABS acrylonitrile-butadiene-styrene
  • polycarbonate polycarbonate
  • polyester polybutylene terephthalate, etc.
  • reinforcing or coloring the card frame various known reinforcing materials and coloring agents (such as rod-shaped, fibrous, and particulate boilers) can also be added.
  • the shape of the card frame is not particularly limited. Just do it. For example, there are shapes used in conventionally known semiconductor memory cards such as various memory cards and IC cards.
  • the stress relaxation layer preferably has a porous structure.
  • the shape of the force frame should be designed in the card frame semiconductor mounting board installation part so that after the semiconductor mounting board is installed, there is a gap to allow the above-mentioned expanded air to escape. Is recommended.
  • the width of the gap is preferably, for example, not less than 0.1 mm. If the width of the gap is smaller than the above range, the expanded air escapes. The width of the gap may be, for example, 0.2 mm or less.o The smaller the width of the gap, the easier the force frame becomes / J and molding.o
  • the stress relieving layer is a layer that relieves bending stress applied to the card frame (built-in semiconductor chip).
  • connection terminal 13 near-near the side is shown in an enlarged manner.
  • the stress relaxation layer 14 is an adhesive layer 15 , 15 and are bonded to the force frame 11 and the semiconductor mounting substrate 12.
  • the stress relaxation layer 14 is deformed without peeling off from the card frame 11, but the bending stress is reduced. Since the stress is relieved in the layer 14, the stress transmitted to the semiconductor mounting substrate 12 is greatly reduced. Therefore, the interface separation between the stress relaxation layer 14 and the semiconductor mounting substrate 12 is also suppressed, and as a result, the separation between the semiconductor mounting substrate and the card frame is high. Is suppressed. At this time, the stress relieving layer 14 extends in the thickness direction, and the elongation in the thickness direction greatly contributes to suppression of separation between the card frame 11 and the semiconductor mounting substrate 12.
  • the stress relaxation layer is formed of a resin film.
  • the force S is a resin film.
  • a resin film has a tensile elastic modulus of IMPa to 130 OMPa and a tensile elongation at break of 5% or more. Is preferred.
  • the present inventors have found that the presence or absence of the function of extending the stress relaxation layer in the thickness direction can be alternatively evaluated by the tensile elastic modulus and the tensile elongation at break of the resin film constituting the stress relaxation layer. Was found.
  • a stress relaxation layer composed of a resin film having a tensile elastic modulus satisfying the above range and a tensile elongation at break equal to or greater than the lower limit above has a good function of extending the stress relaxation layer in the thickness direction. Therefore, the separation between the semiconductor mounting substrate and the card frame can be more highly suppressed.
  • the tensile modulus is more preferably 5 MPa or more and 80 OMPa or less, and the tensile elongation at break is more preferably 20% or more, still more preferably 30% or more. .
  • the stress relaxation layer has a small elongation in the thickness direction. In addition, the relaxation of the bending stress in the stress relaxation layer may be insufficient. Furthermore, when the tensile rupture elongation is lower than the above lower limit value, the stress relaxation layer may be broken when the internal semiconductor card receives a large bending strain. If the tensile modulus is lower than the above range, the stress relaxation layer may be unnecessarily deformed and broken.
  • the resin film constituting the stress relaxation layer is an adhesive laminated film in which adhesive layers are provided on both sides in advance, and then is used for bonding the card frame to the semiconductor mounting substrate. (Details will be described later.)
  • the adhesive laminate film is used. If a compressive stress is applied during passage between rolls during the production of a roll, a production problem such as difficulty in maintaining the thickness may occur.
  • polyolefin resins such as polyethylene (PE) and polypropylene (PP); Nylon 6, Nylon 66, etc.
  • Polyamide resins Polyester resins such as polyethylene terephthalate (PET) and polybutylene terephthalate; Polyurethane resins; Ataryl resins;
  • Fluorine-based resins such as TFE, tetrafluoroethylene, and polyethylene copolymers.
  • the stress relieving layer preferably has a porous structure.
  • a void-containing film such as a foam film, a woven fabric, a non-woven fabric, or a porous film such as a stretched porous finolem constitutes the stress relieving layer. It is mentioned.
  • the adhesive is used to integrate the semiconductor mounting board with the adhesive layer through the stress-relaxation process. The volatile components contained in the water can escape through the pores. As a result, it is difficult for voids to be formed at the interface between the adhesive and the adherend, and it is possible to prevent a decrease in adhesive strength due to generation of voids.
  • the semiconductor mounting board and the card frame are thermocompression bonded via a stress relaxation layer, there is a problem that the card frame is easily deformed by heat.
  • the layer has a porous structure, if it is heated from the semiconductor mounting substrate side, the stress relaxation layer plays the role of a heat insulating layer, making it difficult for heat to be transmitted to the card frame side. Can be prevented.
  • the stress relaxation layer having a porous structure a porous film made of a fibrous or fibrous resin is preferable.
  • the stress relaxation layer is formed of a porous film having extremely fine fibrils, the above-mentioned recovery effect is remarkable. Therefore, as the stress relaxation layer, a stretched porous PTFE film is particularly preferable because it can form an extremely thin fibril by stretching, has a large tensile elongation at break, and has an appropriate tensile modulus.
  • the card with a built-in semiconductor Since the card with a built-in semiconductor is gripped by a finger when using the card, it is usually made of a solid material so as to withstand the compressive force at this time.
  • the idea of forming a part with a porous structure is entirely new. -When the card with built-in semiconductor is crushed in the thickness direction when it is gripped by a finger-The position of the terminal part is lowered, and when the card with built-in semiconductor is inserted into the slot of the device, the built-in semiconductor Poor contact between the card terminals and equipment terminals may occur.
  • the present inventor has found that even when the material constituting the stress relaxation layer is a porous structure, the card with a built-in semiconductor is gripped with a finger by using a material having a tensile elasticity satisfying the above range. It has been found that it can withstand the compressive force at the time.
  • PTFE A paste obtained by mixing fine powder (having a crystallinity of 90% or more) with a molding aid is molded, the molding aid is removed from the molded body, and then a high temperature [melting point of PTFE (approximately 32) Temperature of less than 7 ° C), for example, about 300 ° C] It is obtained by stretching at a high speed and, if necessary, baking.
  • uniaxially stretched porous PTFE film can be obtained by stretching only in the MD direction (longitudinal direction at the time of manufacturing the stretched porous PTFE film) or TD direction (direction orthogonal to the MD direction). If the film is stretched biaxially in the direction and the TD direction, a biaxially stretched porous PTFE film can be obtained.
  • the stress relaxation layer of the present invention any of a uniaxially stretched and a biaxially stretched porous PTFE film may be used. However, since the mechanical anisotropy and the electrical anisotropy are small, biaxial stretching is preferred. Expanded porous PTFE films are more preferred.
  • the nodes are thin islands perpendicular to the stretching direction, and the interlocking buoyrils (folded crystals) are connected to connect the nodes.
  • a linear molecular bundle that has been melted and pulled out is oriented in the stretching direction.
  • the space between the fibers or the space defined by the buoyril and the suds has a fibrous structure with pores.
  • the fibrils spread radially, the nodes connecting the buibrils are scattered in islands, and the spider web has many spaces defined by the fibrils and the nodes. It has a fibrous structure.
  • the porosity of the expanded porous PTFE film is preferably from 30% to 95%, more preferably from 50% to 90%. If the porosity is too small, the tensile modulus may exceed the above range, and the stress relaxation layer using such a film may not sufficiently reduce the bending stress. On the other hand, the porosity is too large
  • the mechanical strength of the film is remarkably reduced, which may cause the film to fall below the lower limit of the tensile modulus, and may also deteriorate the handling property (handling property) at the time of processing.
  • the porosity is determined based on the apparent density P l (g / cm 3 ) of the expanded porous PTFE film measured according to the provisions of JISK6885 and the density of PTFE 0 (2.2 g / cm 3 ). 3 ) The following formula
  • the maximum pore size of the stretched porous P-TFE film is preferably from 0.1 ⁇ m to 20 ⁇ m, more preferably from 0.1 ⁇ m to 10 ⁇ m. . If the maximum pore size of the expanded porous PTFE film is out of the above range, it is difficult to make the tensile modulus and tensile elongation at break within the above ranges.
  • the adhesive of the adhesive layer (described later) adjacent to the stress relieving layer becomes the stress relieving layer.
  • the adhesion between the stress-relaxation layer and the adhesive layer is improved due to the An effect or the effect of the penetration into the pores.
  • the maximum pore diameter of the expanded porous PTFE film constituting the stress relaxation layer is less than the above range, the adhesive of the adhesive layer becomes difficult to penetrate into the pores, and the anchor effect tends to be insufficient. It is in.
  • the “maximum pore diameter” is a value measured according to the provisions of ASTM F-316.
  • the maximum pore diameter of the stretched porous PTFE film in this specification is a value measured by this method.
  • the preferred thickness of the resin film constituting the stress relaxation layer varies depending on the type of the resin film used, the porosity, and the like.
  • the thickness is generally from 0.05 mm to 0.5 mm. More preferably, the thickness is 0.01 mm or more and 0.3 mm or less, and more preferably 0.03 mm or more and 0.1 mm or less. Also, in the case of other resin films (especially porous films), it is desirable that the thickness is in the above range. If a resin film having a thickness exceeding the above range is used for the stress relaxation layer, it will be difficult to meet the demand for a thinner semiconductor built-in card. On the other hand, in the case of a resin film having a thickness less than the above range, the handleability is impaired due to a decrease in strength and the like.
  • the thickness of the porous film referred to here is the average thickness measured with a dial gauge (for example, 1/1000 mm Dianoresic Gage manufactured by Techloc) (other than the panel load on the main unit). (Measured under no load). All the thicknesses of the porous film in this specification are values measured by this method.
  • Adhesion between the stress relaxation layer and the card frame and between the stress relaxation layer and the semiconductor mounting substrate are desirably performed via an adhesive layer (15 in FIG. 3).
  • the adhesive layer is formed by applying a liquid adhesive to one or both of the contact surfaces of the card frame (semiconductor mounting g-plate), the stress relaxation layer, or the adhesive. A method using a film can be adopted.
  • An adhesive layer having a peel strength of 0.4 N / mm or more, preferably 0.8 N / mm or more is recommended. More specifically, when the adhesive layer between the stress relieving layer and the semiconductor mounting substrate is called an adhesive layer A, and the adhesive layer between the stress relieving layer and the card frame is called an adhesive layer B, the adhesive layer A and the semiconductor At least one (preferably both) of the peel strength A at the interface with the mounting board and the peel strength B at the interface between the adhesive layer B and the card frame are 0.4 N / mm or more (preferably 8 N / mm or more is recommended. Peel strength is too low
  • the peel strength is a value obtained by measuring under the conditions described in the examples described below, in accordance with the provisions of JIS C 6481.
  • the adhesive various adhesives known in the art can be used.
  • the adhesive (adhesive layer) A between the stress relieving layer and the semiconductor mounting substrate and the adhesive between the stress relieving layer and the card frame are used.
  • the agent (adhesive layer) B the same material or a different material may be used.
  • the adhesive is selected according to the material of the semiconductor mounting substrate (the sealing member, if the substrate is sealed as described below) and the card frame, as described later. Therefore, when the material of the semiconductor mounting substrate (or the sealing member) and the card frame are different, different adhesives A and B are often used.
  • the adhesive B used on the card frame side may be, for example, an epoxy resin, a polyurethane resin, an acrylic resin (a cyanoacrylate resin). And other acrylic resins), polyamide resins (such as nylon 6, nylon 66), -polyester resins-[polyethylene terephthalate-K (PET), Polybutylene terephthalate, a reactive polyester resin described below, etc.), and a nitrile rubber (NBR) resin.
  • the adhesive B may be epoxy resin, polyurethane resin, acrylic resin (cyanoacrylate resin, second generation reactive acrylic resin).
  • SGA Polyamide resin
  • PET polyethylene terephthalate
  • NBR resin reactive polyester resin described below, etc.
  • the material of the card frame is Even if different from the ABS resin, epoxy resin, polyurethane resin, acrylic resin, polyamide resin, polyester resin, nitrile rubber (NBR) resin, etc. are used as appropriate. I'm sorry.
  • thermoplastic resin such as a polycarbonate resin
  • a thermoplastic resin as the adhesive B.
  • the affinity with the force frame is improved, and the bonding strength to the card frame is improved.
  • the use of a polyester resin for the adhesive B is advantageous in improving the affinity (adhesion strength). Desirable.
  • the adhesive A for bonding the semiconductor mounting board and the stress relieving layer is an epoxy resin, a polyurethane resin, or an acrylic resin. Adhesives such as are preferred, and among them, thermosetting resins (particularly epoxy resins) are particularly preferred because of their excellent adhesiveness.
  • the sealing resin is other than the epoxy resin, or when the sealing resin is not used, the same resin as described above may be used as the adhesive A.
  • the epoxy resin used for the adhesive A and / or the adhesive B is a curable compound containing at least two epoxy groups in a molecule.
  • glycidyl ether of phenols is typical.
  • the glycidyl ethers of the phenols are particularly excellent in curability and cured product properties.
  • the phenols include bisphenol A such as bisphenol A, bisphenol S, bisphenol F, bisphenol AD, and bisphenol A such as hydrogenated bisphenol A.
  • bisphenol A such as bisphenol A, bisphenol S, bisphenol F, bisphenol AD, and bisphenol A such as hydrogenated bisphenol A.
  • Nopolak resins such as enol nopolak resin, cresol nopolak resin, and bisphenol A nopolak resin.
  • a compound having one epoxy group in the molecule may be used as a part of these epoxy resins (for example, about 50% by mass or less based on the total amount of the epoxy resin).
  • the curing agent include a phenol resin (a resin having at least two phenolic hydroxyl groups in a molecule), dicyandiamide, dicarboxylic dihydrazide, and a reaction product of an epoxy resin and an amide compound.
  • phenolic resin examples include phenolic phenolic resin, cresophenolic resin, bisphenol A phenolic resin, phenolic phenolic resin, and polyvinylphenol.
  • dicarponic acid diazide and razide examples include, for example, adipic dihydrazide, sebacic dihydrazide, and isophthalic dihydrid.
  • Drazid can be exemplified.
  • a reaction product of the epoxy group and the amine compound for example, a compound commercially available under the trade name of NOPOCURE J (manufactured by Asahi Kasei Corporation) is used.
  • curing agents have a functional group capable of reacting with the epoxy group of the epoxy resin in any case.-3 o
  • the curing agent is an equivalent ratio of the epoxy group of the epoxy resin to the reactive functional group of the curing agent. (Reactive functional group / epoxy group) is, for example, 03-1 to 5, preferably 05-1
  • various conventionally known compounds can be used as the curing accelerator for the epoxy resin.
  • imidazoles such as 2-ethyl-4-methylimidazole
  • dicyandiamide derivatives dicarboxylic dihydrazide
  • triphenylphosphine triphenylphosphine
  • tetratol Phenol phosphonimulet trafeborate 21-tetrafluoro-tetrafluorobutyrate
  • 1,8-diazabicyclo 5
  • Metal catalysts such as 4,0) pentacene-1 7-tetraphenyl ester and zinc octylate.
  • the amount of these curing accelerators used is preferably from 0.01 to 5.0 parts by mass, more preferably from 0.05 to 1.0 parts by mass, based on 100 parts by mass of the epoxy resin. Is more preferable.
  • a reactive thermoplastic resin for example, a saturated polyester resin “Hybon 766 3” manufactured by Hitachi Chemical Co., Ltd .; Generation-type reactive acrylic resin.
  • a cross-linking agent may be added as necessary to appropriately improve the adhesiveness, heat resistance, moisture absorption reliability, and the like.
  • the cross-linking agent include, in the case of a polyester resin, sociate, block succinate, and melamine resin.
  • thermoplastic resin may be added for the purpose of controlling the viscosity.
  • poly (ethylene terephthalate), poly (phenylene sulfide), polyester sulphone polyether ether ketone thermoplastic polyester, thermoplastic polyester resin, liquid crystalline polyester (liquid crystalline polyester), tetrafluoropropylene-hexafur.
  • various thermoplastic resins such as tetrapropylene copolymer, tetrafluoroethylene-perfluoroalkylvinylinoleate copolymer, and tetrafluoronorethylene-ethylene copolymer. They can be used alone or as a mixture of two or more.
  • urethane-based acrylic-based
  • acrylic-based acrylic-based
  • a flexible resin such as a rubber-based resin may be added. Furthermore, additives such as surfactants, coupling agents, plasticizers, and flame retardants; fillers such as organic and / or inorganic powders and fibers; May be calories.
  • these adhesives may be mixed with a component capable of exhibiting tackiness at room temperature, such as an acrylic resin, in order to improve the workability of application.
  • a component capable of exhibiting tackiness at room temperature such as an acrylic resin
  • the adhesive resin is set so that the softening point and the curing temperature after blending are 150 ° C. or less. If the temperature is higher than this, the processing temperature at the time of bonding becomes too high, and the card frame may be deformed.
  • the adhesive layer by coating As a method for forming the adhesive layer by coating, known coating methods such as roll coating, die coating, and spray coating can be employed.
  • the coating may be performed after the viscosity is reduced by adding an organic solvent to the adhesive resin to dilute the adhesive resin or by heating the adhesive resin.
  • an adhesive film for example, a casting method (formation of an adhesive resin-containing layer by coating on the surface of the release-film; drying if necessary) Can be used, but it is more preferable to use an adhesive film obtained by filling the pores of a porous base material with an adhesive.
  • an epoxy resin that is suitable as an adhesive has a low viscosity when heated and melted, so the resin flow is large, and it is easy for the resin to protrude from the area to be bonded during bonding. Problems such as dirt may occur.
  • an inorganic or organic filler or a rubber component is mixed into an epoxy resin.
  • the viscosity of the resin is too high, which tends to cause problems such as air bubbles during application.
  • an adhesive film formed by filling the pores of the porous substrate with an adhesive is used, the above problem is solved because the porous substrate plays a role in suppressing the opening of the adhesive resin. Can be avoided.
  • porous substrate used for the adhesive film examples include a porous film such as a void-containing film such as a foamed film, a woven fabric, a nonwoven fabric, and a stretched porous film. It is preferable to use a PTFE film. As described above, since the stretched porous PTFE film has a very fine fibril-node structure, the flow of the adhesive resin can be controlled extremely well. As the expanded porous PTFE film, the same one suitable for the above-mentioned stress relaxation layer can be used.
  • a kiss roll, a squeeze, a dip, a flow coat, a roll pressure impregnation, and a vacuum with a liquid adhesive resin (varnish) are used as a method of filling the adhesive resin into such a porous base material.
  • a method of impregnating the pores of the porous base material and drying (solidifying) by a method selected from various methods such as impregnation according to the required accuracy and the like can be adopted.
  • the adhesive resin may be provided as necessary.
  • the viscosity may be reduced by re-diluting the mechanical solvent or by heating, and then subjected to the impregnation.
  • the porous base material is a film made of a fluororesin such as an expanded porous PTFE film
  • the affinity with the bonding resin is low, so that repelling occurs and the bonding occurs. May not be sufficiently filled with resin for use. Therefore, it is recommended to apply a surface treatment to the porous resin film before impregnation to improve the wettability of the adhesive resin (varnish).
  • Such surface treatments include, for example, the following methods (I) to (III) for reducing water repellency.
  • the physicochemical method refers to a method of irradiating a porous resin film with plasma, ultraviolet rays, electron beams, or the like, or performing corona discharge treatment. This makes it possible to oxidize or radicalize the surface to lower the water repellency.
  • the chemical method is a method in which a compound having lower water repellency than the resin constituting the porous resin film is contained in the film, and the water repellency is reduced by the action of the compound.
  • a compound having such properties is dissolved in a solvent having wettability to the porous resin film, and the resultant is impregnated into a porous resin film. Then, only the solvent is removed to convert the compound into a porous resin film. It can be coated on the surface of the resin film skeleton (the surface of the node and the fiber).
  • Examples of such a compound include polymers having a hydrophilic group (such as a hydroxyl group, an ether group, and a ketone group), such as polyvinyl alcohol, polyvinylinolepyrrolidone, and vinylinoleate / recoholate phthalanolate.
  • a hydrophilic group such as a hydroxyl group, an ether group, and a ketone group
  • polyvinyl alcohol such as polyvinyl alcohol, polyvinylinolepyrrolidone, and vinylinoleate / recoholate phthalanolate.
  • organic polymers such as polyethylene block copolymers
  • inorganic polymers obtained by a sol-gel reaction from alkoxysilanes and the like can be mentioned.
  • a method in which a film (or a group of compounds) whose water repellency is reduced by irradiation or discharge treatment as described in (I) above is contained in the film in advance as in (II) above.
  • the group of compounds includes, for example, compounds that are activated by absorbing light of a specific wavelength (for example, photo-functionality such as 2,7—2—sodium anthraquinon-2-sulfonate). And a metal salt. If necessary, this compound group is mixed with a halogen ion source, a surfactant, a solvent, and the like, impregnated into a porous resin film, dried, and dried under a predetermined light (for example, a wavelength of 400 nm or less). UV light)
  • the metal ions can be reduced and the metal can be fixed on the surface of the porous resin film. Water repellency can be reduced by the action of the fixed metal.
  • Examples of the organic solvent used for diluting the adhesive resin include ketones such as acetone, methylethylketone (MEK), methylisobutylketone, cyclohexanone; toluene, xylene, and the like.
  • Aromatic hydrocarbons such as mesitylene; ethylene glycol monomethyl ether, ethylene glycol monoethylene glycol, etc.
  • Esters such as acetate and ethyl acetate; amides such as N, N-dimethylformamide and N, N-dimethylacetamide; and the like, depending on the type of adhesive resin. Or a mixture of two or more. From the viewpoint of reducing the amount of residual solvent after drying, it is desirable to use a low-boiling solvent having a boiling point of 150 ° C or less (especially 130 ° C or less) such as MEK.
  • the volume filling ratio of the pores is preferably from 80 to 120% by volume, from 90 to L; more preferably from L to 10% by volume, and from 95 to 10%. More preferably, it is set to 5% by volume. If the filling rate is too low, it may cause porosity and poor adhesion, while if it is too high, the resin flow may become large and the connection terminals may be stained.
  • the case where the filling rate exceeds 100% by volume means a state where the adhesive resin is also present on the surface of the porous substrate.
  • an adhesive laminated film in which adhesive layers are formed on both sides of the resin film that constitutes the stress relaxation layer in advance is also preferable to prepare them. According to this method, the workability at the time of assembling is improved and the thickness accuracy of the adhesive layer is also improved, as compared with the case where a liquid adhesive is applied to the semiconductor mounting substrate or the card frame.
  • An adhesive layer is formed only on one side of the resin film (stress relieving layer) in advance, and when the resin film (stress relieving layer) is laminated on a semiconductor mounting board or a card frame, the remaining part of the resin film (stress relieving layer) is formed. A method of applying a liquid adhesive on one side can also be adopted.
  • an adhesive is applied to both sides of the resin film constituting the stress relaxation layer and dried (solidified), or an adhesive is applied to both sides of the resin film constituting the stress relaxation layer.
  • a film preferably, an adhesive film filled with an adhesive resin in pores of a porous base material
  • a method of melting and bonding and integrating can be adopted. It is also possible to apply an adhesive to one side of the resin film, dry it, and bond and integrate the adhesive film on the other side.
  • thermosetting resin When a thermosetting resin is used as the adhesive resin, it is preferable that after forming the adhesive layer, the solvent be dried to be in a semi-cured state (a so-called B stage) and then heat-cured when assembling the semiconductor built-in card.
  • the thickness of the adhesive layer is not less than 0.01 mm and not more than 0.2 mm.
  • the thickness is more preferably from 0.03 mm to 0.1 mm, and still more preferably from 0.005 mm to 0.05 mm. If the thickness of the adhesive layer is less than the above range, the adhesiveness may be insufficient. If the thickness of the adhesive layer exceeds the above range, the thickness of the semiconductor built-in card becomes too thick, and the resin flow also increases. Too big.
  • the thickness of the adhesive B on the card frame side may be adjusted according to the elastic modulus of the adhesive layer B.
  • the adhesive layer B When the elasticity of the adhesive layer B is high, the bending stress concentrates on the adhesive interface, and the stress relaxation layer tends not to function sufficiently.Therefore, the adhesive layer is made thinner as the elastic modulus of the adhesive layer becomes higher. It is recommended to avoid concentration of bending stress. For example, it is desirable that the product of the elastic modulus (unit: MPa) and the thickness (unit: mm) of the adhesive layer B is 100 or less, preferably 50 or less. The thickness of the adhesive layer A on the substrate side does not have to satisfy the above numerical range because the adhesive layer A does not actually bend.
  • a release finolem on the surface for the purpose of preventing stickiness and preventing self-adhesion due to aging.
  • the release finolem one obtained by subjecting a paper to a release treatment or a resin film is suitably used.
  • the material of the resin film is not particularly limited, but is generally a polyolefin-based resin such as PE or PP; a polyester-based resin such as PET; Also, the resin film has
  • V Mold resin may be subjected to a release treatment such as a single step of attaching a resin film surface to the resin film.
  • the following is an example of a method of manufacturing a card with a built-in semiconductor according to the present invention, in which the above-mentioned adhesive laminated film in which adhesive layers are formed on both surfaces of a resin film constituting a stress relaxation layer is used. To explain.
  • the adhesive laminated film is cut as necessary according to the size of the semiconductor mounting substrate or the mounting portion of the card mounting frame on the semiconductor mounting substrate.
  • the adhesive laminated film may be supplied in a state of being cut into such a size in advance.
  • the semiconductor mounting board and the card frame are bonded via the cut adhesive laminated film.
  • either one of the semiconductor mounting board and the card frame is attached to one surface of the adhesive laminated film. It is also possible to adopt a method in which one is adhered and then the other is attached to the other surface.
  • T Adhesion of semiconductor mounting substrate-adhesive laminated film-one-time frame * ST
  • the surface to be bonded of the semiconductor mounting board or force frame is pre-assembled as necessary to improve the bonding strength. Treatment, corona discharge treatment, and bramer treatment may be performed.
  • the resin used for the sealing resin of the semiconductor mounting substrate and the resin frame often contains a fox component for the purpose of improving the mold release from the mold during molding. Physical or chemical treatment for removal may be applied.
  • the encapsulation resin used for the semiconductor mounting board is cured after encapsulation molding with a transfer mold, but when bonding to the encapsulation surface, the curing time is shortened and cured to improve the bonding strength. It is also good to reduce the degree. For example, if an epoxy resin is used for both the sealing resin and the adhesive, if the degree of curing of the sealing resin is reduced, the unreacted groups of the sealing resin (epoxy resin) become The adhesive strength is stronger than the resin.
  • the temperature at the time of bonding is preferably set to 115 ° C. or less from the viewpoint of suppressing deformation of the card frame.
  • a thermosetting resin is used as the adhesive for the adhesive layer, it is necessary to perform a curing treatment.In this case, however, the temperature is set to 150 ° C. or less to suppress the deformation of the card frame. (Preferably below 130 ° C) is recommended.
  • the separation between the semiconductor mounting substrate and the card frame is highly suppressed even under the bending stress by introducing the stress relaxation layer. Even if such a stress relaxation layer is extremely thin, the above-mentioned effect can be sufficiently ensured, so that it is possible to meet the demand for miniaturization and thinning of a semiconductor built-in card.
  • the tensile modulus of the adhesive film before lamination with the stress relaxation layer was measured in the same manner as in the case of the _b ⁇ self-stress relaxation layer. However, if the adhesive layer contains epoxy resin, cure at 120 ° C for 90 minutes before measuring.
  • the measurement is performed in accordance with JIS K 6856, under the conditions of indenter tip: R 1 mm, distance between support points: 20 mm, measurement temperature: normal temperature, compression speed: 1 mm / min. . Also check which part of the built-in semiconductor card is the peeled surface after peeling.
  • the adhesive film (1) laminated with the stress relaxation layer is used.
  • a release polyester film was placed on one side of this adhesive finolem (however, if the adhesive finolem was produced by the cast method, the release polyester film used in the cast method was used as it was. Use),
  • a copper foil with a thickness of 35 ⁇ is placed on the other surface, and these are pressed using a roll laminator at a temperature of 100 ° C and a pressure of 1 MPa. This crimped body was cut to a width of 10 mm, and the release film was peeled off.
  • the sealing surface side of the model plate was pressed using a press at a temperature of 120 ° C and a pressure of 0 • 5 Bond under the conditions of MPa and time of 10 seconds to prepare a measurement sample. At this time, a thickness of 2 between the adhesive film and the model plate
  • the part where the release film is inserted is not bonded, so it will be a chucking part when measuring peel strength.
  • the copper foil is used as a reinforcing material for preventing the adhesive film from elongating when measuring the peel strength.
  • Epoxy resin (“EPICLON” manufactured by Dainippon Ink and Chemicals, Inc.
  • the viscosity of the above varnish was measured using a viscometer (“RE100L” manufactured by Toki Sangyo Co., Ltd.) at a sample volume of 1 mL and a temperature of 23 ° C. Yes, use a gelling tester (“Nichishin Kagaku Co., Ltd.“ 0-Choice 0-3 ”).]” Temperature of hot plate: 170 ° C according to the provisions of 13C6487 The gel time measured under the following conditions was 240 seconds.
  • Stretched porous p TFE film (“Gotex (registered trademark)” manufactured by Japan Goatex, thickness: 20 ⁇ , porosity: 70%, maximum pore size: 0.2 the zm), impregnated with the varnish using a kiss roll coater, 1 5 0 ° to 5 minutes and dried in C, and the volume filling ratio of the pores is 1 0 0 vol 0 /. (64% by mass) of an adhesive film (adhesive layer) was obtained.
  • Stretched porous PTFE film ("Gotex (registered trademark)", manufactured by Japan Gortex Co., Ltd.), thickness: 80111, porosity: 35 ° /., Maximum pore diameter: 0 as a stress relaxation layer 1 ⁇ m) with the above adhesive film on both sides, using a roll laminator, pressure bonding at a temperature of 100 ° C and a pressure of 1 MPa to form a 3-layer adhesive. A laminated film was obtained.
  • a silicon chip (thickness: 0 mm) viewed from the flash memory on the surface of an FR 4 glass epoxy circuit board ("EL-170" manufactured by Mitsubishi Gas Chemical Company) with a terminal circuit on the back. 4mm, width: 7mm, length: 10) mounted and sealed with epoxy resin compound (outer dimensions: thickness: 1.5mm, width: 10mm, length
  • the above adhesive laminated film cut to the same size as the substrate was placed on a sealing surface (length: 15 mm) (the surface opposite to the terminal surface) using a press machine at a temperature of 110 °. C, pressure: 0.5 MPa, time: 5 seconds, preliminarily bonded to obtain a substrate with an adhesive laminated film.
  • the poly carb seen on the card frame With the adhesive laminated film in the center of a net plate ("Gulliver 301-1-10" manufactured by Sumitomo Dow) (thickness: 1.0 mm, width: 20 mm, length: 30 mm)
  • the substrate is bonded with the adhesive film exposed side to the polycarbonate plate side using a press machine under the following conditions: temperature: 120 ° C, pressure: 0.5 MPa, and time: 10 seconds.
  • the substrate was cured at 120 ° C. for 90 minutes to obtain a semiconductor built-in card.
  • the above-described evaluation was performed on the above-mentioned expanded porous PTFE film and the semiconductor built-in card. Table 1 shows the results.
  • the expanded porous PTF Efinolem that constitutes the stress relaxation layer has a thickness of 8
  • Example 1 was changed to that of Example 1 except that it was changed to that of Jiannon Gotex Co., Ltd. Similarly, a semiconductor built-in power was obtained.
  • the expanded porous PTFE finolem that constitutes the stress relaxation layer has a thickness of 8 ⁇ m-and a void of: -85.
  • the largest pore-diameter 5 •-0 ⁇ -m.
  • Gotechx registered trademark
  • the built-in semiconductor power was obtained in the same manner as in Example 1.
  • the above-described evaluation was performed on the above-mentioned stretched porous PTFE film and the semiconductor built-in force. The results are shown in Table 1.
  • This varnish is applied to the surface of a PET film (release film, thickness: 50 ⁇ m) to a thickness of 20 ⁇ using a die coater, and then applied to a surface of 150 °. After drying at C for 5 minutes, an adhesive film was obtained.
  • Example 2 Toluene was added to a saturated polyester resin (“Hybon 766 3” manufactured by Hitachi Chemical Co., Ltd.) to prepare a 60% by mass solution (varnish).
  • the viscosity of this varnish measured in the same manner as in Example 1 was as follows: Viscosity: -36-0 cm-voise. -Apply this varnish to the surface of a PET film (release film, thickness: 50 ⁇ m) using a die coater to a thickness of 20 / xm. It was dried at 150 ° C. for 5 minutes to obtain an adhesive film.
  • Example 2 MEK was added to the same composition as that used for the varnish in Example 1 to prepare a solution (varnish) having a concentration of 65% by mass of components other than the MEK.
  • the viscosity and the gel time of this varnish measured in the same manner as in Example 1 were as follows: viscosity: 380 cmvoise; gel time: 230 seconds.
  • This varnish is applied to the surface of a PET film (release film, thickness: 50 ⁇ ) by a casting method to a thickness of 120 ⁇ using a die coater. 1 5 0 dried 1 0 minutes D C, to obtain an adhesive Fi Noremu.
  • a card with a built-in semiconductor was obtained in the same manner as in Example 1, except that the adhesive film peeled from the release film was used instead of the adhesive laminated film having a stress relaxation layer.
  • the above-described evaluation was performed on the semiconductor built-in card. The results are shown in Table 1.
  • the stress-relaxation-layer-stretched porous P T-FE film is composed of:-one thickness-:-80 / im, porosity: 20%, maximum pore size: 0.05
  • a card with a built-in semiconductor was obtained in the same manner as in Example 1 except that it was changed to ⁇ (“GATEX (registered trademark)” manufactured by Japan Gotex).
  • the above-described evaluation was performed on the above-mentioned stretched porous PTFE film and the semiconductor built-in card. The results are shown in Table 1.
  • the stretched porous PTFE film that constitutes the stress relaxation layer has a thickness of 80 ⁇ m, a porosity of 96%, and a maximum pore diameter of 10 // m (“Gotex (registered trademark)” manufactured by Japan Goretex. Change to ”)”) and glue
  • a card with a built-in semiconductor was obtained in the same manner as in Example 2, except that the thickness of the adhesive film used in Example 2 was changed to 30 ⁇ m.
  • the above-described evaluation was performed on the above-mentioned stretched porous PTFE film and the semiconductor built-in card. The results are shown in Table 1.
  • a polyester adhesive film was produced in the same manner as in Example 5, except that the thickness was set to 120 ⁇ .
  • a semiconductor built-in force was obtained in the same manner as in Example 1 except that the above-mentioned polyester-based adhesive film peeled from the release film was used in place of the above-mentioned adhesive laminated film having a stress relaxation layer. .
  • the above-described evaluation was performed on the semiconductor built-in card. Table 1 shows the results. IN3
  • the number in parentheses on the peeled surface indicates the type of peeled surface in the case of fe-bonding.
  • the column of peeling surface in Table 1 shows where the peeling occurred in the semiconductor built-in force after measuring the bending peeling strength.
  • adhesive interface means the interface between the adhesive layer (adhesive film) and the semiconductor mounting substrate, and the interface between the force and the frame.
  • the built-in semiconductor card in which the stress relaxation layer is interposed between the semiconductor mounting board and the frame has no stress relaxation layer.
  • the flexural peel strength is higher, and it can be confirmed that the effect of suppressing the peeling between the semiconductor mounting board and the frame is exhibited.
  • the adhesive resin flow has become smaller.
  • an adhesive layer having a stress relaxation layer of an expanded porous PTFE film having both favorable values of tensile elastic modulus and elongation at break, and a product of tensile elastic modulus and thickness being suitable is used.
  • the bending peel strength was very good, and the above peeling suppressing effect was remarkable.
  • the semiconductor built-in card of the present invention can be used for a conventionally known application as a memory card or an IC card.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Credit Cards Or The Like (AREA)

Abstract

L'invention concerne une carte incorporant un semiconducteur, qui comprend un substrat sur lequel un semiconducteur est monté, et un porte-cartes, et se caractérise en ce qu'une couche de relâchement de tension est intercalée entre le substrat et le porte-cartes. La couche de relâchement de tension est, par exemple, une couche de résine présentant, de préférence, un module d'élasticité en traction d'environ 1-1300 Mpa et un allongement de rupture à la traction d'au moins environ 5 %. La couche de relâchement de tension présente, de préférence, une structure poreuse. Selon l'invention, la séparation entre le porte-cartes et le substrat sur lequel le semiconducteur est monté peut être supprimée dans une large mesure lorsqu'une contrainte de flexion est appliquée, la carte étant maintenue conforme aux exigences de réduction de la taille et de l'épaisseur.
PCT/JP2004/015185 2003-10-07 2004-10-07 Carte incorporant un semiconducteur WO2005036453A1 (fr)

Applications Claiming Priority (2)

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JP2003-348536 2003-10-07
JP2003348536 2003-10-07

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WO2005036453A1 true WO2005036453A1 (fr) 2005-04-21

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01145197A (ja) * 1987-06-11 1989-06-07 Dainippon Printing Co Ltd １ｃカードの製造方法
JPH0516584A (ja) * 1991-07-10 1993-01-26 Toppan Printing Co Ltd Ｉｃカード、ｉｃカード用モジユールおよびｉｃカードの製造方法
JPH0516585A (ja) * 1991-07-10 1993-01-26 Toppan Printing Co Ltd Ｉｃカード、ｉｃカード用モジユールおよびｉｃカードの製造方法
JPH08267973A (ja) * 1995-03-30 1996-10-15 Toppan Printing Co Ltd Ｉｃカード
JPH0995075A (ja) * 1995-09-30 1997-04-08 Hitachi Maxell Ltd Ｉｃカード
JP2000251048A (ja) * 1999-03-03 2000-09-14 Oji Paper Co Ltd Ｉｃカード
JP2002175510A (ja) * 2000-12-05 2002-06-21 Konica Corp 個人認証カード、画像記録体及び画像記録体の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01145197A (ja) * 1987-06-11 1989-06-07 Dainippon Printing Co Ltd １ｃカードの製造方法
JPH0516584A (ja) * 1991-07-10 1993-01-26 Toppan Printing Co Ltd Ｉｃカード、ｉｃカード用モジユールおよびｉｃカードの製造方法
JPH0516585A (ja) * 1991-07-10 1993-01-26 Toppan Printing Co Ltd Ｉｃカード、ｉｃカード用モジユールおよびｉｃカードの製造方法
JPH08267973A (ja) * 1995-03-30 1996-10-15 Toppan Printing Co Ltd Ｉｃカード
JPH0995075A (ja) * 1995-09-30 1997-04-08 Hitachi Maxell Ltd Ｉｃカード
JP2000251048A (ja) * 1999-03-03 2000-09-14 Oji Paper Co Ltd Ｉｃカード
JP2002175510A (ja) * 2000-12-05 2002-06-21 Konica Corp 個人認証カード、画像記録体及び画像記録体の製造方法

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