WO2005035837A1 - Compose semi-conducteur monocristallin et processus de production de celui-ci - Google Patents

Compose semi-conducteur monocristallin et processus de production de celui-ci Download PDF

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Publication number
WO2005035837A1
WO2005035837A1 PCT/JP2004/015311 JP2004015311W WO2005035837A1 WO 2005035837 A1 WO2005035837 A1 WO 2005035837A1 JP 2004015311 W JP2004015311 W JP 2004015311W WO 2005035837 A1 WO2005035837 A1 WO 2005035837A1
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WO
WIPO (PCT)
Prior art keywords
diameter
single crystal
crystal
compound semiconductor
crucible
Prior art date
Application number
PCT/JP2004/015311
Other languages
English (en)
Inventor
Fumio Matsumoto
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to DE112004001866T priority Critical patent/DE112004001866T5/de
Priority to GB0607078A priority patent/GB2421697A/en
Priority to US10/575,081 priority patent/US20070068446A1/en
Publication of WO2005035837A1 publication Critical patent/WO2005035837A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Definitions

  • the present invention relates to a process for producing a single crystal of a compound semiconductor, such as of GaAs or InP, by means of the vertical gradient freezing (hereinafter referred to as the "VGF") method or the vertical Bridgman (hereinafter referred to as the VVF) method or the vertical Bridgman (hereinafter referred to as the VVF) method or the vertical Bridgman (hereinafter referred to as the VVF) method or the vertical Bridgman (hereinafter referred to as the VVF) method or the vertical Bridgman (hereinafter referred to as the VVF) method or the vertical Bridgman (hereinafter referred to as the VBF) method or the vertical Bridgman (hereinafter referred to as the VBF) method or the vertical Bridgman (hereinafter referred to as the VBF) method or the vertical Bridgman (hereinafter referred to as the VBF) method or the vertical Bridgman (hereinafter referred to as the VBF) method or the
  • the liquid encapsulated Czochralski (hereinafter referred to as the ⁇ LEC") method has generally been employed for producing a GaAs single crystal or an InP single crystal.
  • the LEC method is advantageous in that it can relatively easily produce a wafer of large diameter.
  • the LEC method involves problems in that a crystal having a high dislocation density, which would affect device characteristics or device life, is grown because of a high temperature gradient in the crystal growth direction.
  • the VGF or VB method is advantageous in that it can reduce the temperature gradient in the crystal growth direction, and thus it easily produces a crystal of low dislocation density.
  • a crystal is grown at low temperature gradient, and thus generation of twin crystals tends to occur as a result of non-uniform crystal growth due to the temperature fluctuation in a furnace.
  • polycrystallization tends to occur through accumulation of dislocations contained in a grown crystal which are propagated from a seed crystal or accumulation of dislocations which are formed by thermal stress generated in the grown crystal.
  • the VGF or VB method encounters difficulty in producing a single crystal of low dislocation density with high reproducibility.
  • the probability of generation of twin crystals is closely related to the inclination angle of the diameter- increasing portion of a crystal, which portion is formed between the constant-diameter portion of the crystal and a seed crystal.
  • a (111) facet plane is formed at the diameter-increasing portion of the crystal, and twin crystals are generated from the facet plane. Since the angle between the (111) facet plane and the (100) crystal plane is 54.7°, in order to prevent formation of the facet plane, the angle of the diameter-increasing section of a crucible with respect to the crystal growth direction is preferably regulated to
  • the angle of the diameter-increasing portion of the crystal exceeds 35°, at which twin crystals are generated.
  • difficulty is encountered in producing a single crystal.
  • a compound semiconductor single crystal having a zincblende structure is to be grown by means of the VGF or VB method
  • a crucible whose bottom is inclined at a predetermined angle (80° or more and less than 90°) with respect to the crystal growth direction, and the temperature gradient (in the crystal growth direction) of at least the inclined bottom of the crucible is regulated to 1 °C/cm or more and less than 5 °C/cm during crystal growth, the single crystal is grown without forming a diameter-increasing portion.
  • the time required for forming a portion between the shoulder portion and the constant-diameter portion of the crystal is shortened, and facet growth is suppressed, thereby preventing generation of twin crystals (see JP-A HEI 10-87392) .
  • the temperature fluctuation in the crucible (which hermetically contains a raw material and a liquid encapsulant) must be regulated so as to fall within ⁇ 0.1°C as measured by a thermocouple provided at a position on the outer wall of the crucible, the position corresponding to the bottom of the crucible.
  • the pressure in the crucible must be increased to 30 to 50 atm
  • a single crystal is grown at high yield, since formation of a diameter-increasing portion, which is generally inevitable in the case of growth of a crystal, can be prevented (see Advanced Electronics Series 1-4, Baruku Kessho Seicho Gij ⁇ tsu ("Bulk Crystal Growth Technique") , edited and authored by Keigo Hoshikawa, Baifukan Co., Ltd., page 239) .
  • a seed crystal of large diameter not readily available at present must be employed.
  • objects of the present invention are to provide a process for producing a high-quality single crystal of a compound semiconductor, the single crystal having a large diameter (e.g., 3 inches or more), and to produce a compound semiconductor single crystal having a low average dislocation density (preferably less than 5,000 dislocations/cm 2 ) .
  • the present invention provides a process for producing a single crystal of a compound semiconductor, which process comprises bringing a molten raw material liquid into contact with a seed crystal accommodated in a lower section of a crucible; and gradually cooling the molten raw material liquid in the crucible so that solidification of the raw material liquid proceeds upward, to thereby grow a single crystal, wherein the seed crystal has a diameter which is 0.50 to 0.96 times that of a constant- diameter portion of the single crystal, and a diameter- increasing portion of the single crystal has a diameter increased during growth of the single crystal such that a peripheral wall of the diameter-increasing portion is inclined at 5° or more and less than 35° with respect to a crystal growth direction, followed by growth of a constant-diameter portion of the single crystal.
  • the seed crystal has an average dislocation density of less than 10,000 dislocations/cm 2 .
  • the seed crystal has a diameter of at least 50 mm.
  • the constant-diameter portion has a diameter of at least 75 mm.
  • the diameter-increasing portion has a length of 20 to 100 mm as measured in the crystal growth direction.
  • the compound semiconductor is a GaAs or InP semiconductor.
  • the present invention also provides a single crystal of a compound semiconductor produced through any one of the first to sixth mentioned processes for producing a compound semiconductor single crystal, wherein the compound semiconductor single crystal has an average dislocation density of less than 5,000 dislocations/cm 2 .
  • the compound semiconductor is a GaAs or InP semiconductor.
  • the invention also provides a crucible for growing a single crystal which is employed for a compound semiconductor single crystal growth process in which a molten raw material liquid is brought into contact with a seed crystal accommodated in a lower section of a crucible, and the molten raw material liquid is gradually cooled in the crucible so that solidification of the raw material liquid proceeds upward, to thereby grow a single crystal
  • the crucible comprising a seed crystal accommodation section; a diameter-increasing section which is provided atop the seed crystal accommodation section and which has an outer wall inclined at 5° or more and less than 35° with respect to a crystal growth direction; and a constant- diameter section provided atop the diameter-increasing section, wherein the seed crystal accommodation section has an inner diameter which is 0.50 to 0.96 times that of the constant-diameter section.
  • the seed crystal accommodation section has an inner diameter of at least 50 mm.
  • the constant-diameter section has a diameter of at least 75 mm.
  • the diameter-increasing section has a length of 20 to 100 mm.
  • Fig. 1 is a schematic cross-sectional view showing a crystal growth furnace employed in the case where the VGF method is employed in the process of the present invention.
  • Fig. 2 is a schematic cross-sectional view showing a seed crystal and a crucible employed in the process of the present invention.
  • Fig. 3 is a schematic cross-sectional view showing a seed crystal and a crucible employed in Comparative Example.
  • An InP substrate having a diameter as large as 3 inches or more is increasingly envisaged to be employed in optical communication devices or electronic devices, or to be employed as a substrate on which such devices are mounted for producing an optoelectronic integrated circuit (OEIC) .
  • OEIC optoelectronic integrated circuit
  • a substrate having a low dislocation density i.e., an average dislocation density of 5,000 dislocations/cm 2 .
  • a seed crystal having a low dislocation density i.e., an average dislocation density of 5,000 dislocations/cm 2
  • a seed crystal having a low dislocation density i.e., an average dislocation density of less than 10,000 dislocations/cm 2
  • the amount of dislocations (propagated from the seed crystal) contained in the resultant crystal is reduced to possibly as low as one-tenth that of dislocations contained in the seed crystal.
  • a seed crystal having a diameter of 3 inches i.e., a seed crystal having the same cross- sectional shape and dimensions as those of a crystal to be grown
  • a seed crystal having a diameter of 3 inches by means of the VGF or VB method.
  • a 2-inch seed crystal having a low dislocation density i.e., less than 10,000 dislocations/cm 2
  • difficulty is encountered in producing, through a technique belonging to the state of the art, a single crystal having a diameter as large as 3 inches or more and sufficiently low dislocation density, since thermal stress is generated in the single crystal during crystal growth or cooling.
  • the production process of the present invention produces a single crystal whose constant-diameter portion has a diameter of 3 or 4 inches, by use of a relatively readily available crystal serving as a seed crystal (e.g., a crystal having an average dislocation density of 10,000 dislocations/cm 2 and a diameter of 2 inches) .
  • the resultant single crystal has an average dislocation density of 10,000 dislocations/cm 2 or less.
  • a characteristic feature of the production process of the present invention resides in that the process employs the VB or VGF method; a crucible including a seed crystal accommodation section at its bottom, a diameter-increasing section which is provided atop the accommodation section and is inclined at 5° or more and less than 35° with respect to the crystal growth direction, and a constant- diameter section provided atop the diameter-increasing section; and a seed crystal having a diameter which is 0.50 to 0.96 times that of a constant-diameter portion of a single crystal to be produced.
  • the diameter- increasing section When the diameter- increasing section is inclined by less than 5° with respect to the crystal growth direction, the length of that section becomes excessively large, resulting in failure to produce a single crystal whose constant- diameter portion has a target diameter. In addition, a large production apparatus and high cost are required. In contrast, when the diameter-increasing section is inclined by 35° or more with respect to the crystal growth direction, twin crystals are generated. The angle between the diameter-increasing section and the crystal growth direction is more preferably 20 to 30°. When the diameter of the seed crystal to be employed is less than 0.5 times or 0.96 times or more that of the constant-diameter portion of the single crystal, an additional step is required for processing of a presently available 2-inch or 3-inch seed crystal.
  • the ratio of the seed crystal diameter to the constant-diameter portion diameter is preferably 0.6 to 0.8.
  • the diameter (inner diameter) of the seed crystal accommodation section of the crucible is 50 mm or more, and the length of the constant-diameter section of the crucible is 75 mm or more.
  • the length of the diameter-increasing section is preferably 20 to 100 mm as measured in the crystal growth direction.
  • the seed crystal to be employed preferably has an average dislocation density of less than 10,000 dislocations/cm 2 and a diameter of 50 mm or more.
  • the above-described production process can produce a single crystal (e.g., an InP or GaAs single crystal) having an average dislocation density of less than 5, 000 dislocations/cm 2 .
  • Fig. 1 is a schematic cross-sectional view showing a crystal growth furnace employed in the case where the VGF method is employed in the production process of the present invention.
  • reference numeral 1 denotes a BN-made crucible.
  • the crucible includes a seed crystal accommodation section having a diameter of 50 mm or more at its bottom; a diameter-increasing section which is provided atop the accommodation section and is inclined by an angle ( ⁇ ) of 5° or more and less than 35° with respect to the crystal growth direction; and a constant-diameter section having a diameter equal to that of a single crystal to be grown.
  • the accommodation section provided at the bottom of the crucible accommodates a seed crystal 2 having a low dislocation density, i.e., an average dislocation density of less than 10,000 dislocations/cm 2 .
  • a molten raw material liquid 3 of InP crystal is provided atop the seed crystal 2.
  • Reference numeral 4 denotes a crystal which has been grown upward from the seed crystal 2 through solidification of the molten raw material liquid 3.
  • the top surface of the molten raw material liquid is covered with a liquid encapsulant 5 (B 2 0 3 ) so as to prevent evaporation of phosphorus from the molten liquid.
  • Reference numeral 6 denotes a heater which is provided for melting the raw material 3 and the encapsulant 5, for maintaining the temperature of the section of the crucible where the seed crystal 2 is accommodated at a low level such that a crystal can be grown on the seed crystal, and for forming a temperature profile such that the temperature increases upward in the crucible.
  • Reference numeral 7 denotes a susceptor for supporting the crucible. This growth furnace is provided in a high-pressure container, and the furnace is filled with an inert gas.
  • the molten raw material liquid is solidified by controlling the temperature of the seed crystal accommodation section by the heater, to thereby grow a crystal upward from the seed crystal.
  • the heater and the crucible are moved relative to each other, to thereby grow a crystal through solidification of the molten raw material liquid.
  • a crystal of low dislocation density which has been produced through a typical LEC method is not suitable for use as a seed crystal, since, when such a crystal is employed as a seed crystal, the dislocation density of a crystal grown on the seed crystal fails to be reduced sufficiently.
  • the present invention employs, as a seed crystal, a crystal of low dislocation density which has been grown by means of, instead of the typical LEC method, a modified LEC method or horizontal boat method in a Group V element atmosphere at low temperature gradient.
  • a crystal of low dislocation density which has been grown through the process of the present invention employing the VGF or VB method can be used as a seed crystal.
  • the average ' dislocation density of a crystal is obtained by calculating the average of dislocation densities as measured, at intervals of 5 mm in a radial direction, in the surface of a wafer cut out of the crystal .
  • the seed crystal to be employed may be a crystal which is not doped with a dopant (i.e., a non-doped crystal) , or a crystal doped with an element which constitutes a crystal to be grown.
  • the seed crystal may -be recycled.
  • the process of the present invention is advantageous in that a crystal having two or more different diameters (e.g., a crystal having diameters of 2 inches and 3 inches) can be grown in a single crystal growth step by regulating the height of the seed crystal accommodation section of the crucible as shown in Fig. 2, and by regulating the angle between the diameter-increasing section and the crystal growth direction within a range of
  • a seed crystal (diameter: 51.5 mm, thickness: 20 mm), an InP polycrystalline raw material (2500 g) , Fe serving as a dopant (0.03 wt% on the basis of the weight of the polycrystalline raw material) , and B 2 0 3 (400 g) were fed into the BN-made crucible, and the crucible was accommodated in a susceptor.
  • the seed crystal employed was a crystal (average dislocation density: 8,000 dislocations/cm 2 ) which had been grown by means of a modified LEC method (instead of a typical LEC method) in a phosphorus atmosphere.
  • the susceptor containing the seed crystal, the polycrystalline raw material and B 2 0 3 was placed in the furnace, and argon gas (i.e., an inert gas) was brought into the furnace, whereby the pressure in the furnace was regulated to 40 atm (4 MPa) .
  • the furnace was heated to about 1,070°C by use of a heater such that B 2 0 3 and the polycrystalline raw material were melted.
  • the temperature of the seed crystal accommodation section was regulated to the melting point of InP (1,062°C), and the temperature of the furnace was decreased such that the crystal growth rate became 2 mm/hr. After crystal growth was performed for about 50 hours, the furnace was cooled to room temperature over 10 hours.
  • the crucible was removed from the furnace.
  • B 2 0 3 contained in the BN crucible was dissolved in alcohol, to thereby yield an Fe-doped InP single crystal ingot having a diameter of 3 inches and a total length of 90 mm.
  • the singe crystal ingot thus obtained was found to contain no twin crystals.
  • the single crystal ingot was cut into pieces, and the dislocation density thereof was measured. As a result, the single crystal was found to have a low dislocation density i.e., an average dislocation density of 2,500 dislocations/cm 2 .
  • Fe-doped InP single crystal growth tests were performed five times by use of a seed crystal having an average dislocation density of less than 10,000 dislocations/cm 2 .
  • generation of twin crystals was observed at the diameter-increasing portion of the resultant single crystal.
  • an InP single crystal containing no twin crystals and having a low dislocation density i.e., less than 5,000 dislocations/cm 2 ) was produced at high yield.
  • Comparative Example The procedure of the aforementioned Example was repeated, except that there were employed a BN-made crucible (total length: 250 mm) including a seed crystal accommodation section (inner diameter: 10 mm, height: 40 mm) , a diameter-increasing section (angle with respect to the crystal growth direction: 45°) and a constant-diameter section (inner diameter: 80 mm), and a seed crystal having a diameter of 9.5 mm and a length of 40 mm, to thereby grow an InP crystal.
  • Generation of twin crystals was observed at an initially grown portion of the diameter- increasing portion of the resultant Fe-doped crystal.
  • InP crystal growth tests were performed five times. In all the tests, generation of twin crystals was observed at the diameter- increasing portion of the resultant crystal, and a single crystal failed to be obtained.
  • Industrial Applicability The process of the present invention can produce, at high yield, a single crystal of a compound semiconductor
  • the compound semiconductor single crystal of large diameter can be employed in optical communication devices or electronic devices, and employed as a substrate for optoelectronic integrated circuits.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un processus de production de composé semi-conducteur monocristallin qui consiste à mettre en contact un liquide de matériau brut fondu avec un cristal gemme placé dans la partie inférieure d'un creuset et, à refroidir graduellement ce liquide de matériau brut fondu dans ce creuset de façon que la solidification de ce liquide de matériau brut se fasse vers le haut, permettant la croissance d'un monocristallin. Ce cristal gemme possède un diamètre de 0,5 à 0,96 fois celui d'une partie de diamètre constant d'un monocristal. Une partie à diamètre augmenté de ce monocristal possède un diamètre augmenté durant la croissance du monocristal de sorte qu'une paroi périphérique de cette partie à diamètre augmenté soit inclinée de 5 degrés au moins et de 35 degrés au plus par rapport au sens de croissance du cristal, suivie par la croissance de la partie à diamètre constant de ce monocristal..
PCT/JP2004/015311 2003-10-10 2004-10-08 Compose semi-conducteur monocristallin et processus de production de celui-ci WO2005035837A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112004001866T DE112004001866T5 (de) 2003-10-10 2004-10-08 Verbindungshalbleiter-Einkristall und Herstellungsverfahren dafür
GB0607078A GB2421697A (en) 2003-10-10 2004-10-08 Compound semiconductor single crystal and production process thereof
US10/575,081 US20070068446A1 (en) 2003-10-10 2004-10-08 Compound semiconductor single crystal and production process thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003-351827 2003-10-10
JP2003351827 2003-10-10
US51285803P 2003-10-22 2003-10-22
US60/512,858 2003-10-22

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DE (1) DE112004001866T5 (fr)
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (ja) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> 単結晶育成方法
JPH10139597A (ja) * 1996-11-07 1998-05-26 Japan Energy Corp Ｉｉｉ −ｖ 族化合物半導体単結晶の成長容器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (ja) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> 単結晶育成方法
JPH10139597A (ja) * 1996-11-07 1998-05-26 Japan Energy Corp Ｉｉｉ −ｖ 族化合物半導体単結晶の成長容器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
AMON J. ET AL.: "Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique", JOURNAL OF CRYSTAL GROWTH, vol. 187, 1998, pages 1 - 8, XP004119771 *

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GB0607078D0 (en) 2006-05-17
DE112004001866T5 (de) 2006-08-31

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