GB2421697A - Compound semiconductor single crystal and production process thereof - Google Patents

Compound semiconductor single crystal and production process thereof Download PDF

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Publication number
GB2421697A
GB2421697A GB0607078A GB0607078A GB2421697A GB 2421697 A GB2421697 A GB 2421697A GB 0607078 A GB0607078 A GB 0607078A GB 0607078 A GB0607078 A GB 0607078A GB 2421697 A GB2421697 A GB 2421697A
Authority
GB
United Kingdom
Prior art keywords
single crystal
diameter
crystal
compound semiconductor
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0607078A
Other versions
GB0607078D0 (en
Inventor
Fumio Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of GB0607078D0 publication Critical patent/GB0607078D0/en
Publication of GB2421697A publication Critical patent/GB2421697A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A process for producing a compound semiconductor single crystal includes bringing a molten raw material liquid into contact with a seed crystal accommodated in a lower section of a crucible and gradually cooling the molten raw material liquid in the crucible so that solidification of the raw material liquid proceeds upward, thereby growing a single crystal. The seed crystal has a diameter which is 0.50 to 0.96 times that of a constant-diameter portion of the single crystal. A diameter-increasing portion of the single crystal has a diameter increased during growth of the single crystal such that a peripheral wall of the diameter-increasing portion is inclined at 5{ or more and less than 35{ with respect to a crystal growth direction, followed by growth of constant-diameter portion of the single crystal.

Description

GB 2421697 A continuation (74) Agent and/or Address for Service: tJ
Cleveland 40-43 Chancery Lane, LONDON, WC2A 1JQ, United Kingdom
GB0607078A 2003-10-10 2004-10-08 Compound semiconductor single crystal and production process thereof Withdrawn GB2421697A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003351827 2003-10-10
US51285803P 2003-10-22 2003-10-22
PCT/JP2004/015311 WO2005035837A1 (en) 2003-10-10 2004-10-08 Compound semiconductor single crystal and production process thereof

Publications (2)

Publication Number Publication Date
GB0607078D0 GB0607078D0 (en) 2006-05-17
GB2421697A true GB2421697A (en) 2006-07-05

Family

ID=34436919

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0607078A Withdrawn GB2421697A (en) 2003-10-10 2004-10-08 Compound semiconductor single crystal and production process thereof

Country Status (3)

Country Link
DE (1) DE112004001866T5 (en)
GB (1) GB2421697A (en)
WO (1) WO2005035837A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (en) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> Growing method for single crystal
JPH10139597A (en) * 1996-11-07 1998-05-26 Japan Energy Corp Growth vessel for iii-v group compound semiconductor single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340987A (en) * 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> Growing method for single crystal
JPH10139597A (en) * 1996-11-07 1998-05-26 Japan Energy Corp Growth vessel for iii-v group compound semiconductor single crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. AMON et al., Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique, Journal of Crystal Growth, 1998, Vol.187, pp. 1-8 *

Also Published As

Publication number Publication date
GB0607078D0 (en) 2006-05-17
WO2005035837A1 (en) 2005-04-21
DE112004001866T5 (en) 2006-08-31

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)