WO2009017201A1 - PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT - Google Patents

PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT Download PDF

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Publication number
WO2009017201A1
WO2009017201A1 PCT/JP2008/063785 JP2008063785W WO2009017201A1 WO 2009017201 A1 WO2009017201 A1 WO 2009017201A1 JP 2008063785 W JP2008063785 W JP 2008063785W WO 2009017201 A1 WO2009017201 A1 WO 2009017201A1
Authority
WO
WIPO (PCT)
Prior art keywords
melt
producing
bulk
crystal
polycrystal ingot
Prior art date
Application number
PCT/JP2008/063785
Other languages
French (fr)
Japanese (ja)
Inventor
Noritaka Usami
Kazuo Nakajima
Isao Takahashi
Original Assignee
National University Corporation Tohoku University
Asa Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008108887A external-priority patent/JP4528995B2/en
Application filed by National University Corporation Tohoku University, Asa Co., Ltd. filed Critical National University Corporation Tohoku University
Priority to US12/671,139 priority Critical patent/US8187563B2/en
Publication of WO2009017201A1 publication Critical patent/WO2009017201A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

[PROBLEMS] To provide a process for producing an Si bulk polycrystal ingot, which can produce, at a high yield, a high-quality and high-homogeneity Si bulk polycrystal ingot which has no significant crystal defects and is free from diffused impurities. [MEANS FOR SOLVING PROBLEMS] A dendrite crystal (3) is produced, within a crucible (1) containing an Si melt (2), near the surface of the Si melt (2) by bringing a coolant close to the surface of the Si melt (2) from above the crucible (1), or by inserting the coolant into the Si melt (2) to locally cool the upper surface of the Si melt (2). Thereafter, the melt is cooled while maintaining a proper temperature distribution to allow an Si bulk crystal to grow from the upper part toward the lower part using the lower surface of the dendrite crystal (3) as a fresh growth face.
PCT/JP2008/063785 2007-08-02 2008-07-31 PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT WO2009017201A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/671,139 US8187563B2 (en) 2007-08-02 2008-07-31 Method for producing Si bulk polycrystal ingot

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007201697 2007-08-02
JP2007-201697 2007-08-02
JP2008-108887 2008-04-18
JP2008108887A JP4528995B2 (en) 2007-08-02 2008-04-18 Method for producing Si bulk polycrystalline ingot

Publications (1)

Publication Number Publication Date
WO2009017201A1 true WO2009017201A1 (en) 2009-02-05

Family

ID=40304429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063785 WO2009017201A1 (en) 2007-08-02 2008-07-31 PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT

Country Status (1)

Country Link
WO (1) WO2009017201A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104562193A (en) * 2015-01-30 2015-04-29 扬州荣德新能源科技有限公司 Casting method for polycrystalline silicon ingot

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10194718A (en) * 1996-12-27 1998-07-28 Kawasaki Steel Corp Production of polycrystalline silicon ingot for solar cell
JP2005132671A (en) * 2003-10-30 2005-05-26 Jfe Steel Kk Method for producing high-quality polycrystalline silicon
JP2007045640A (en) * 2005-08-08 2007-02-22 Tohoku Univ Forming method of semiconductor bulk crystal
WO2007063637A1 (en) * 2005-11-30 2007-06-07 Tohoku University Process for producing polycrystalline bulk semiconductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10194718A (en) * 1996-12-27 1998-07-28 Kawasaki Steel Corp Production of polycrystalline silicon ingot for solar cell
JP2005132671A (en) * 2003-10-30 2005-05-26 Jfe Steel Kk Method for producing high-quality polycrystalline silicon
JP2007045640A (en) * 2005-08-08 2007-02-22 Tohoku Univ Forming method of semiconductor bulk crystal
WO2007063637A1 (en) * 2005-11-30 2007-06-07 Tohoku University Process for producing polycrystalline bulk semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104562193A (en) * 2015-01-30 2015-04-29 扬州荣德新能源科技有限公司 Casting method for polycrystalline silicon ingot

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