WO2005020395A1 - Dispositif a semi-conducteur luminescent et son procede de production - Google Patents

Dispositif a semi-conducteur luminescent et son procede de production Download PDF

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Publication number
WO2005020395A1
WO2005020395A1 PCT/JP2004/012340 JP2004012340W WO2005020395A1 WO 2005020395 A1 WO2005020395 A1 WO 2005020395A1 JP 2004012340 W JP2004012340 W JP 2004012340W WO 2005020395 A1 WO2005020395 A1 WO 2005020395A1
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active layer
light
range
semiconductor device
period
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PCT/JP2004/012340
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English (en)
Inventor
Masanobu Ando
Masahito Nakai
Toshiya Uemura
Masaaki Nakayama
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Toyoda Gosei Co., Ltd.
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Priority to JP2006519272A priority Critical patent/JP4636022B2/ja
Priority to DE602004011656T priority patent/DE602004011656T2/de
Priority to US10/564,416 priority patent/US7291868B2/en
Priority to EP04772296A priority patent/EP1602157B1/fr
Publication of WO2005020395A1 publication Critical patent/WO2005020395A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures

Definitions

  • the present invention relates to a light-emitting semiconductor device which comprises an active layer of single-layer structure.
  • the present invention can be applied not only to a light-emitting semiconductor device such as a light-emitting diode (LED) but also to a light-receiving semiconductor device.
  • a light-emitting semiconductor device such as a light-emitting diode (LED)
  • LED light-emitting diode
  • a surface emitting type of semiconductor laser for example, a device disclosed in the following patent document 1 has been well-known.
  • Such a surface emitting type of semiconductor laser comprises an active layer of MQW structure in order to enlarge its gain.
  • some of a light-emitting diode (LED) and a semiconductor laser of a surface emitting type may comprise an active layer of MQW structure.
  • FIG. 6 is a perspective view illustrating a surface emitting type of semiconductor laser shown in a patent document 2 listed below. Such an active layer of MQW structure is employed to a lot of light-emitting semiconductor device now.
  • Patent document 1 Japanese Laid-open patent application Hll-46038
  • Patent document 2 Japanese Laid-open patent application 2001-160627
  • Non-patent document 1 CF. Klingshirn, "Semiconductor Optics," Chapter 19
  • a conventional invention unprofitably consumes materials and requires longer time for crystal growth. That is, MQW structure is not always a desirable structure for active layer considering materials , cost and productivity. Especially, the more well layers are deposited, the more this problem comes to the front and becomes strongly apparent.
  • an object of the present invention is to produce an active layer of high gain easily at lower cost, to thereby reduce the cost for manufacturing a light-emitting semiconductor device
  • the first aspect of the present invention provides a light-emitting semiconductor device which is formed by depositing plural layers of group III nitride compound semiconductor, comprising an active layer having single layer structure of a semiconductor layer at least including indium (In) , wherein composition ratio a of indium (In) is in a range of 0.0001 to 0.05, the composition ratio a is varied at a constant period L in waveform in a direction of the z axis which is parallel to the growth axis of the active layer, and the period L is arranged to be an approximately constant value selected from a range of lnm to lOnm.
  • a group III nitride compound semiconductor generally includes a binary, ternary, or quaternary semiconductor represented by a formula Al ⁇ - x - y Ga y In x N ( O ⁇ x ⁇ l , O ⁇ y ⁇ l, 0 ⁇ l-x-y ⁇ l) and having an arbitrary composition ratio
  • a group III nitride compound semiconductor in the present specification further includes a semiconductor doped with p-type or n-type impurity.
  • a semiconductor whose portion of the group III elements (Al, Ga, In) may be replaced with boron (B) or thallium (Tl), and a portion of nitrogen (N) may be replaced with phosphorous (P), arsenic (As), antimony (Sb) , or bismuth (Bi) is also included in a group III nitride compound semiconductor of the present specification.
  • the p-type dopant which can be added include magnesium (Mg) and calcium (Ca) .
  • the n-type dopant which can be added include silicon (Si) , sulfur (S) , selenium (Se) , tellurium (Te) , and germanium (Ge) .
  • dopants may be used in combination of two or more species, and a p-type dopant and an n-type dopant may be added simultaneously.
  • a crystal growth method for crystal growing a semiconductor crystal on a substrate MOVPE, HVPE, and MBE processes can be applied.
  • the second aspect of the present invention is a light-emitting semiconductor device which is formed by depositing plural layers of group III nitride compound semiconductor, comprising an active layer having single layer structure of a semiconductor layer at least including indium (In), wherein composition ratio a of indium (In) is in a range of 0.0001 to 0.05, the composition ratio a is varied at a constant period L in waveform in a direction of the z axis which is parallel to the growth axis of the active layer, and the period L is arranged to be an approximately constant value selected from a range of one to six times of Bohr radius R.
  • compositions, impurities and method for crystal growth of the group III nitride compound semiconductor can be the same as that of the first aspect.
  • the more preferable range for the period L is one to four times of BohrradiusR.
  • m h * 1.4m 0 (mo : rest mass of electron ⁇ .
  • the third aspect of the present invention according to the first or second aspect is that the period L is an approximately constant value selected from a range of 2.4nm to 6.8nm. More preferably, the period L is in a range from about 2.9nm to 6. Onm.
  • the fourth aspect of the present invention according to any one of the first to third aspects is that the composition ratio a is in a range from 0.010 to 0.040. More preferably, the composition ratio a is in a range from about 0.02 to 0.03.
  • the fifth aspect of the present invention according to any one of the first to fourth aspects is that gradient ⁇ a/3 z is arranged to be 0. Olnm -1 or less at almost all places .
  • the sixth aspect of the present invention provides a surface emitting type of semiconductor laser which is manufactured according to any one method of the first to fifth aspects, comprising reflection planes vertical to the z axis, each of which is formed on and below the active layer, respectively, wherein optical distance ⁇ Z between two reflection planes are arranged to an integral multiple of half a oscillation wavelength ⁇ /2.
  • oscillation wavelength ⁇ is a wavelength of lights in vacuum emitted by laser oscillation.
  • optical distance ⁇ Z is a length in the z axis direction in optical oscillation region defined by equation (3).
  • the right side of the equation (3) is definite integral and the range of the integral is obviously defined by position coordinate of each reflection plane.
  • Function n (z, ⁇ ) is reflection index of a semiconductor crystal at each coordinate z and the function n obviously depends not only on coordinate z but also oscillation wavelength ⁇ .
  • the seventh aspect of the present invention according to the sixth aspect is that the integer number is in a range of from 1 to 10.
  • the eighth aspect of the present invention provides a method for manufacturing a surface emitting type of semiconductor laser according to any one method of the first to seventh aspects, wherein supply amount of indium (In) material gas per unit time to the crystal growth surface on which the active layer grows is varied at a constant period selected from a range of 10 sec. to 6 min.
  • the ninth aspect of the present invention according to the eighth aspect is that the period is an approximately constant selected from a range of 30 sec. to 2 min.
  • the tenth aspect of the present invention is a light-emitting semiconductor device according to any one of the first to seventh aspects in which the active layer is doped with a donor impurity so that its electron concentration may be in a range from 1 x 10 16 /cm 3 to 1 x 10 18 /cm 3 at a room temperature. Silicon is preferable as a donor impurity. And more preferable range of the active layer in a room temperature is from 5.0 x 10 16 /cm 3 to 5.0 x 10 17 /cm 3 .
  • the first aspect of the present invention is approximately the same aspect as the second aspect.
  • an active layer having high gain can be manufactured by far easier compared with a conventional art.
  • the gain is large enough to occur stimulated emission and laser oscillation stably and continuously according to the structure of a light-emitting semiconductor device comprising the active layer.
  • Arranging the period L to be an approximately constant value in a range of lnm to lOn enables to provide high gain because the period L corresponds to Bohr radius R of an electron-hole pair existing in the active layer. This stimulated emission is, as shown in FIGS.
  • emission mechanism Electron-hole pairs (excitons EX) generated in the active layer collide to other excitons (EX) , and then one exciton is scattered to an exciton state (EX*) at higher energy side which has two or more quantum number while the other exciton is scattered to optical branch level at the lower energy side and is converted into lights (EX + EX
  • the inventors of the present invention confirmed that the stimulated emission process due to electron-exciton scattering is also generated overlapping with the stimulated emission due to exciton-exciton scattering process when the active layer has the electron concentration about 5.0 x 10 16 c ⁇ rT 3 or more .
  • the active layer is preferably doped with n-type impurity to have the electron concentration of 5.0 x 10 16 cm -3 or more at a room temperature.
  • the threshold can be decreased by about 10%.
  • electron concentration may be in a range from 1 x 10 16 /cm 3 to 1 x 10 18 /cm 3 . More preferably, the electron concentration of the active layer at a room temperature is in a range from 5.0 x 10 16 /cm 3 to 1 x 10 18 /cm 3 , and further preferably from 5.0 x 10 16 /cm 3 to 5.0 x 10 17 /cm 3 .
  • the active layer has those ranges of electron concentration, its oscillation threshold can be decreased by about 10% compared with that of a laser having a non-doped active layer whose electron concentration is smaller than 1 x 10 16 /cm 3 or 1 x 10 15 /cm 3 .
  • the inventors of the present invention consider that such a stimulated emission mechanism can be realized by means of injection of electric current into the group III nitride compound semiconductor effectively according to the first and second aspects of the present invention. It can be obviously understood from the non-patent document 1 that the gain necessary for the stimulate emission can be obtained when at least two excitons , in theory, go through the above explained processes..
  • the first and second aspects of the present invention can bring a remarkably ideal condition for localizing excitons . Consequently, according to the first or the second aspect of the present invention, high gain can be obtained using an active layer of simple structure. For example, with respect to a semiconductor laser, only by forming its active layer to comprise proper rate of In, a semiconductor laser whose threshold voltage is remarkably low can be manufactured. According to the third aspect of the present invention, the period L can correspond to the exciton radius R when the active layer is made of a non-doped InGaN or AlInGaN.
  • the active layer having high luminous efficiency can be formed to have a larger thickness, which is very useful.
  • the composition ratio a of indium (In) in the active layer is too large, stress generated in the device becomes too large by forming the active layer to have enough thickness. That is not desirable in quality of a device.
  • the composition ratio of indium (In) in the active layer is too small, it is obvious that luminous efficiency decreases .
  • the active layer is formed to have thickness of 500nm or more, limitation of the composition ratio of indium (In) is around 2%.
  • the composition ratio a of In is larger than 2%, defects such as cracks are generated in a device and life of a device tends to be shorter .
  • the full width at half-maximum of spectrum of light emitted from the active layer can be smaller to some extent.
  • structure in resonant direction can be quite simple. That makes it easier to design and manufacture a surface emitting type of semiconductor laser compared with a conventional art .
  • Optical distance ⁇ Z between the mirror surfaces is preferably one to ten multiple of half an oscillation wavelength ⁇ ( ⁇ /2) (the seventh aspect of the present invention) .
  • the active layer having excellent quality can be easily manufactured only by controlling supply amount of material gas comprising indium (In) .
  • supply amount of material gas comprising indium (In) In order to vary composition ratio of indium (In), proportion of relative supply amount of material gas comprising indium (In) to supply amount of other material gas is varied.
  • supply amount of other material gas may function as a control parameter, and the active layer can be also formed to have excellent quality.
  • the active layer is maintained to have crystal of higher I quality while decreasing crystal growth time of the active layer (: obtaining high productivity).
  • higher gain is obtained and the threshold voltage can be reduced .
  • FIG.1 is a sectional view illustrating layer structure of semiconductor crystal comprising an active layer of the present invention.
  • FIG. 2 is a graph showing TMI supplying method when the active layer is growing.
  • FIG. 3A is a graph illustrating output characteristic of a edge emitting type of semiconductor laser comprising the layer structure shown in FIG. 1.
  • FIG. 3B is a graph illustrating output characteristic of a edge emitting type of semiconductor laser comprising the layer structure shown in FIG. 1.
  • FIG.4 is a sectional view illustrating layer structure of semiconductor crystal in a surface emitting type of semiconductor laser in the present invention which comprises an active layer.
  • FIG.5 is a sectional view illustrating layer structure (a modified example of FIG. 1) of semiconductor crystal comprising an active layer in the present invention.
  • FIG. 6 is a perspective view showing an edge emitting type of conventional semiconductor laser.
  • FIG.1 is a sectional view illustrating layer structure 10 of semiconductor crystal comprising an active layer of a light-emitting semiconductor device (an edge emitting type of semiconductor laser) of the present invention.
  • An n-type layer 11 made of silicon (Si) doped gallium nitride (GaN) has a carrier concentration of about 10 19 cm ⁇ 3 .
  • a non-doped active layer 12 formed thereon through crystal growth is made of InGaN whose indium composition ratio is 0.02 and has thickness of about 200nm.
  • a p-type clad layer 13 made of magnesium (Mg) doped p-type AlGaN and a p-type contact layer 14 made of magnesium
  • (Mg) doped p-type AlGaN are deposited in sequence through crystal growth.
  • Aluminum (Al) composition ratio of the p-type contact layer 14 is smaller than that of the p-type clad layer 13.
  • the p-type contact layer 14 may not necessarily comprise aluminum.
  • the active layer 12 is formed through crystal growth described below. While the temperature is kept at 650°C, InGaN whose indium (In) composition ratio is 0.02 is kept growing at an average growth velocity of 5nm/min. for 40 minutes on the crystal growth surface of the n-type layer 11 through MOVPE process. As a result, InGaN having indium average composition ratio 0.02 is grown to be about 200nm in thickness .
  • TMG Ga(CH 3 ) 3
  • TMI trimethil indium
  • NH 3 ammonia
  • FIG. 2 is a graph showing supply amount of TMI while the active layer 12 is formed through crystal growth .
  • amplitude of varying TMI supply amount ( ⁇ (b MA ⁇ - M ⁇ N ) 12 ) and time period ⁇ t should be focused. When the amplitude is too large, the full width at half-maximum of output spectrum becomes larger.
  • the maximum amount b MAX of TMI supply amount is designed to be 8 ⁇ mol/min.
  • the minimum amount b MIN is 7 ⁇ mol/min.
  • the time period ⁇ t functions as a parameter which determines period L when indium composition ratio a in the active layer 12 is oscillated in the z axis direction parallel to the growth axis at an approximately constant period L.
  • the period L of the composition ratio a in the z axis direction may correspond to Bohr radius R in equation (1) .
  • Bohr radius R can be obtained by substituting the physical constant of InGaN whose indium composition ratio is 0.02.
  • ⁇ t in FIG. 2 may be about 34 sec. judging from the average growth velocity (5nm/min.) .
  • TMI supply amount b per unit time By controlling TMI supply amount b per unit time at that period, the active layer 12 whose indium composition ratio a is locally and periodically large (thick) and small (thin) can be obtained .
  • time period ⁇ t may be about 40 sec.
  • the period L is about 3.3nm. Then the active layer 12 having a thickness of 200nm comprises 60 thick and thin periods of indium composition ratio a.
  • the carrier concentration of the n-type layer 11 made of silicon (Si) doped n-type gallium nitride (GaN) is about 10 19 cm "3 . Amount of inj ect ion carrier of that carrier concentration is called In hereinafter.
  • 3A and 3B are graphs showing output characteristics of the edge emitting type of semiconductor laser comprising layers described above .
  • the edge emitting type of semiconductor laser has conventional structure as disclosed in the patent document 2 (FIG. 6) except for the above explained semiconductor crystal layer structure 10 (FIG. 1) .
  • the semiconductor laser is formed to have conventional structure such as a size and shape of a laser cavity, materials and arrangement of an electrode, and other details as much as possible. In these graphs, luminous intensity becomes smaller as amount of injection carrier I decreases.
  • carrier amount I in a range about 0.1I 0 to 0.2I 0 to the standard value I 0 as a boundary
  • the relationship between amount of injecting carrier I and the luminous intensity is nonlinear.
  • the luminous intensity is proportional to the square or the cube of the amount of injection carrier I.
  • the luminous intensity is measured to increase until the carrier concentration becomes about 10 19 cm -3 . Then the gradient of the luminous intensity increase becomes a little small because the gain is saturated.
  • FIG. 4 is a sectional view showing semiconductor crystal layer structure 20 of a surface emitting type of semiconductor laser comprising the active layer of the present invention.
  • Sign 21 represents an n-type contact layer made of n-type GaN and sign 24 represents a p-type layer made of p-type AlGaN.
  • the integer number may preferably in a range from 1 to 10.
  • the "optical distance ⁇ Z" is a length in the z axis direction in optical cavity region defined by the above described equation (3) .
  • the active layer 23 is formed as same as the active layer 12 of the first embodiment. That is, the composition ratio a of indium (In) of the active layer 23 is varied at a constant period L in waveform in a direction parallel to the growth axis of the active layer 23.
  • Each structure of other component may be the same as that of a well-known and common semiconductor laser of a surface emitting type. For example, by applying the above described structure, a semiconductor laser can be manufactured more easily than a conventional surface emitting type of semiconductor laser .
  • FIG. 5 is a sectional view illustrating a deposition layer structure 30 of crystal semiconductor mainly comprising the AlInGaN active layer 32.
  • the structure (deposition layer structure 30) is a modified example of the structure shown in FIG. 1. In short, this structure can be applied to an edge emitting type of semiconductor laser and so on.
  • indium composition ratio a is maintained as same as that in the first embodiment (FIG.
  • composition ratio a is maintained high as in the first embodiment in order to promote localization of excitons.
  • excitons are promoted to be localized by keeping indium composition ratio a high.
  • a semiconductor laser and a light-emitting diode (LED) which emit light having shorter wavelength such as near ultraviolet can be also obtained by mixing appropriate amount of aluminum to the active layer.
  • a luminescent material is used in a light-emitting semiconductor device, a light-emitting device which emits light of shorter output wavelength is advantageous because it can promote excitation in the luminescent material. Accordingly, such structure also has larger utility value.
  • the active layer 12, the active layer 23 and the active layer 32 are not doped with impurities intentionally.
  • silicon is doped into each of the active layer 12, the active layer 23 and the active layer 32 and its electron concentration is arranged to be 5.0 x 10 l ⁇ /cm 3 to 1 x 10 18 /cm 3 to obtain a light-emitting semiconductor device.
  • the stimulated emission mechanism is dependent on the electron concentration in the active layer.
  • the inventors of the present invention confirmed that the stimulated emission process due to electron-exciton scattering is also generated overlapping with the stimulated emission due to exciton-exciton scattering process when the active layer has the electron concentration described above. As a result, when the active layer has those ranges of electron concentration, its oscillation threshold can be decreased by about 10% compared with that of the laser with a non-doped active layer.
  • the present invention is useful not only to a a surface emitting type of semiconductor laser and an edge emitting type, but also to a LED and other kinds of light-emitting semiconductor devices .
  • the present invention is useful not only to a light-emitting semiconductor device but also to a light-receiving semiconductor device.

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif luminescent à semi-conducteur nitrure du groupe III lequel comprend une seule couche active contenant au moins de l'indium (In) dont le rapport de composition se situe dans la gamme de 0,001 à 0,05 et varie à une période L constante en forme d'onde le long du sens parallèle à l'axe de tirage. Ladite période L est réglée pour avoir une valeur approximativement constante choisie dans la gamme de 1 à 10 nm ou celle de 1 à 6 fois le rayon R de Bohr. L'adoption de la structure de ladite couche active permet d'obtenir une condition remarquablement idéale de localisation d'excitons et un dispositif luminescent ayant un gain élevé peut être produit par un processus simple faisant varier la quantité d'alimentation en gaz à indium par temps unitaire périodiquement en forme d'onde pendant le tirage d'une couche active. De plus, comme pour une diode laser à semi-conducteur, une tension à seuil remarquablement bas peut être également obtenue.
PCT/JP2004/012340 2003-08-21 2004-08-20 Dispositif a semi-conducteur luminescent et son procede de production WO2005020395A1 (fr)

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JP2006519272A JP4636022B2 (ja) 2003-08-21 2004-08-20 半導体発光素子及びその製造方法
DE602004011656T DE602004011656T2 (de) 2003-08-21 2004-08-20 Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung
US10/564,416 US7291868B2 (en) 2003-08-21 2004-08-20 Light-emitting semiconductor device and a method of manufacturing it
EP04772296A EP1602157B1 (fr) 2003-08-21 2004-08-20 Dispositif a semi-conducteur luminescent et procede de production

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JP2003-297682 2003-08-21
JP2003297682 2003-08-21

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EP (1) EP1602157B1 (fr)
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DE (1) DE602004011656T2 (fr)
TW (1) TWI238549B (fr)
WO (1) WO2005020395A1 (fr)

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WO2010100689A1 (fr) * 2009-03-03 2010-09-10 パナソニック株式会社 Procédé de fabrication de semi-conducteur composé au nitrure de gallium, et élément électroluminescent à semi-conducteur
EP2330697A1 (fr) * 2009-12-07 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Dispositif à semi-conducteur avec une couche InGaN
JP5238865B2 (ja) * 2011-10-11 2013-07-17 株式会社東芝 半導体発光素子
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102420016B1 (ko) 2015-08-28 2022-07-12 삼성전자주식회사 반사층을 가지는 광변조기

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EP1602157A1 (fr) 2005-12-07
DE602004011656T2 (de) 2009-01-29
EP1602157A4 (fr) 2006-05-03
DE602004011656D1 (de) 2008-03-20
US20060163585A1 (en) 2006-07-27
EP1602157B1 (fr) 2008-02-06
JP4636022B2 (ja) 2011-02-23
US7291868B2 (en) 2007-11-06
TWI238549B (en) 2005-08-21
JP2007529107A (ja) 2007-10-18
TW200509416A (en) 2005-03-01

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