WO2005001153A1 - 多元系被膜の製造装置と方法および多元系被膜の被覆工具 - Google Patents
多元系被膜の製造装置と方法および多元系被膜の被覆工具 Download PDFInfo
- Publication number
- WO2005001153A1 WO2005001153A1 PCT/JP2004/009157 JP2004009157W WO2005001153A1 WO 2005001153 A1 WO2005001153 A1 WO 2005001153A1 JP 2004009157 W JP2004009157 W JP 2004009157W WO 2005001153 A1 WO2005001153 A1 WO 2005001153A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- sequentially
- raw material
- power
- melting
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Definitions
- the present invention relates to a manufacturing apparatus, a manufacturing method, and a method for manufacturing a nitride, carbide, boride, oxide, or silicide having a metal component of two or more elements such as ⁇ 1 ⁇ more easily than the prior art. Further, the present invention relates to a coated tool formed with a film using the manufacturing method.
- PVD Physical Vapor Deposition
- the ion plating method which is a form of the PVD method and combines a part of the vacuum deposition method and the sputtering process, is used to coat metal compounds such as metal carbides, metal nitrides, and metal oxides, or composites of these. Is a surface treatment method for forming. This method is important at present, particularly as a surface coating method for sliding members and cutting tools.
- nitrides having two or more metal components have been produced exclusively by an arc method or a sputtering method.
- an alloy target serving as an evaporating material is expensive, and it is necessary to prepare a target having a composition according to a target film composition.
- the inevitable unreacted metal droplets adhere and the film quality cannot be said to be good.
- the sputtering method can form a very smooth film, but generally has a low film forming speed.
- the melt evaporation type ion plating method (hereinafter, abbreviated as melting method) has an advantage that most of the input raw material can be evaporated and the utilization rate of the raw material metal is high. For this reason, it is particularly advantageous when a metal having a high raw material price or a metal that is difficult to process is used as a raw material. However, it has been difficult for conventional melting methods to uniformly evaporate two or more metal raw materials with significantly different melting points.
- the composition of the obtained film depends on the difference in the melting points, and the film on the base material side becomes a film in which the ratio of the high melting point metal increases toward the surface layer where the ratio of the low melting point metal increases.
- the composition distribution depends solely on the melting point, and it is difficult to control the composition of the film in the film thickness direction.
- a method of mounting a plurality of evaporation sources on an ion booting apparatus has been adopted.
- providing a plurality of evaporation sources requires the addition of a power supply device.
- the deposition rate in the dissolution method depends on the distance and positional relationship of the evaporation source to the object to be deposited, but when multiple evaporation sources are used, the positional relationship between the object to be evaporated and the multiple evaporation sources is determined. It is difficult to make it uniform. Therefore, it is almost impossible to obtain a film having a uniform composition.
- An object of the present invention is to provide a manufacturing apparatus, a manufacturing method, and a tool formed with a coating by using the same method for realizing such a multi-component coating.
- an alloy containing at least two kinds of metals or intermetallic compounds is used as an evaporation raw material, and a single raw material is formed using plasma converged by an electric field or a magnetic field. Dissolve and evaporate from a crucible or hearth. At this time, the first power required to melt and evaporate the raw material is supplied, and after a predetermined time, The power that is gradually increased from the power of the above is repeatedly supplied until the required maximum power is supplied, and the unmelted portion is sequentially melted. In addition, the plasma is converged to the first plasma area necessary for evaporating the raw material, and the plasma is sequentially moved from the first plasma area in the next step. Enlarge and dissolve the unmelted parts sequentially.
- each component of a metal having a significantly different melting point such as TiAIN, has a desired film composition distribution over the entire film thickness to obtain a good film quality. It is possible.
- the evaporation source does not need to exactly match the target film composition. It is possible to use a raw material alloy having a metal component that is almost similar to the target film composition. In addition, since the entire raw material can be used effectively, the raw material utilization efficiency is high.
- the coated tool according to the present invention comprises a high-speed tool steel, a die steel, a cemented carbide, a cermet or the like as a cutting tool base material, and a nitride containing a plurality of metal elements on the base material by the above-described method of the present invention. , Forms a carbide, boride, oxide or silicide coating.
- the inventors attempted to form a TiAIN film using 50 g of a TiAl alloy as a melting raw material under the conditions for obtaining a general TiN film. At this time, the entire TiAl alloy was melted within a few minutes from the start of melting. The resulting coating had a composition in which the proportion of Ti increased as it went to the surface layer with more A1 on the base metal side. This is because A1 has a lower melting point than T-beams and preferentially evaporates the raw material, so that the first film formed necessarily has a higher proportion of A1.
- the electric power used to dissolve the raw material is generally controlled at a substantially constant electric power that is initially selected as optimal, except at the start of melting.
- the present inventors gradually increase this electric power at a predetermined time during melting, so that the unmelted portion starts to newly melt, and replenishes the coating with the low melting point metal contained in the unmelted portion. We inferred that we could do that, and after many experiments, we were able to prove this.
- the electric field or the magnetic field converging the plasma is controlled to melt the unmelted portion, and the plasma region used for melting the raw material is excluding the melting region.
- control is performed in a substantially constant plasma region which is initially selected as optimal.
- the inventors obtain the same effect by performing plasma control that sequentially moves and expands the plasma in the plasma region and continuously moves and expands the plasma region from the first region to the largest plasma region. We inferred that we could do that, and after many experiments, we could prove this.
- the present invention is based on such findings of the inventors.
- the manufacturing apparatus uses an alloy containing at least two kinds of metals or intermetallic compounds as an evaporation raw material, and melts and evaporates the raw material to form a multi-component coating.
- the manufacturing apparatus has a vacuum container 1 for accommodating a member to be coated, that is, a work 2, and a single crucible or hearth 3 provided in the container and containing a raw material 4.
- the apparatus further supplies electric power to the crucible to cause arc discharge, and uses a HCD gun (Hollow Cathode Gun) 5 to evaporate and ionize the raw material by the heat and the plasma 7.
- HCD gun Hollow Cathode Gun
- a plasma control device 9 including an electromagnetic coil 8 for controlling a magnetic field for converging plasma when evaporating the raw material.
- the manufacturing apparatus of the present embodiment has the same configuration as that of the conventional apparatus based on the melt-evaporation type ion plating method except for the power supply device 6 and the plasma control device 9, and further includes the same components as those described above. Description is omitted.
- the power supply device 6 is a progressively increasing power supply system in which the supplied power is gradually increased and the unmelted portions of the raw material are sequentially dissolved.
- the power supply device 6 first supplies 2000 W of electric power necessary for evaporating the raw material. After that, the equipment supplies 300W more power than the power just supplied, after a predetermined time of one minute. In this way, the power increased by 300 W is repeatedly supplied until the required maximum power reaches 8000 W, and the unmelted parts are sequentially melted.
- the plasma control device 9 is configured to change the control of the magnetic field for converging the plasma when evaporating the raw material.
- the plasma control device 9 converges the plasma to the first plasma region necessary for evaporating the raw material, that is, a region having a diameter of 10 mm substantially at the center of the raw material. After that, the device performs control to move and expand the plasma sequentially from the immediately preceding plasma region. In this way, the plasma moves and expands continuously until it reaches a maximum plasma region having a diameter of 40 mm, which covers almost the entire raw material, and sequentially melts the unmelted portion.
- a TiAl alloy plate with a diameter of 40 mm with a metal component almost similar to the target film composition was used as the evaporation material.
- This raw material was placed in a crucible (or hearth), heated and cleaned, and then melted and evaporated in an argon / nitrogen mixed atmosphere of about lPa.
- an HCD gun was used that converged so that the plasma beam diameter on the upper surface of the molten material became about 10 mm.
- a TiAIN coating was formed on a high-speed drill and a carbide end mill that had been previously coated with TiCN as a base.
- Table 1 shows the results of the cutting test using the obtained high-speed drill. In this test, a high-speed drill was used for cutting to the break life.
- Cutting method drilling, 5 cutting each
- Film thickness is measured with a high-speed test piece (SKH51, Ra ⁇ 0.2ii m) by the calotest method (scratch mark method).
- the hard-coated high-speed drill according to the present invention has an extremely long service life, almost double that of the conventional example. This is due to the small surface roughness, which causes almost no droplet formation in the dissolution method.
- a multi-layer coating having a metal component having a significantly different melting point, such as TiAIN has a good film quality such that each component of a different metal has a desired coating distribution over the entire film thickness.
- a raw material alloy having a metal component almost close to the target film composition can be used, and almost the entire material can be effectively used. Is high.
- the coating treatment was performed on the cemented carbide insert (A30) under the conditions of Example 1, and after heating at 900 ° C for 1 hour in the air, the thickness of the oxide layer on the surface was measured. Also shown (item name: oxide thickness). Film defects such as droplets compared to the arc method (conventional example) Because the amount of oxide is small, the oxidation progresses slowly, and the thickness of the oxide layer is also reduced (the oxidation resistance is improved).
- Example 2 Under the conditions of Example 1, a TiAIN film was coated on a carbide end mill previously coated with a TiCN film. For carbide end mills, the flank wear width at a cutting length of 40 m was measured, and the results are shown in Table 1 (item name: end mill flank wear). The cutting specifications are shown below.
- Cut 10mm in axial direction, 0.2mm in radial direction
- the carbide end mill showed about 10% better wear resistance than the TiAIN film formed by the arc method, and became an excellent TiAIN coating. Since the components of the coating are equivalent, it is considered that the oxidation resistance is improved by reducing the droplets.
- the hob provided with TiAIN prepared by the melting method according to the present invention has about 30% less crater wear and about 8% less flank wear than that of TiAIN prepared by the arc method, and is extremely good. It has excellent abrasion resistance.
- a force electric field utilizing a magnetic field may be used for controlling plasma convergence in the embodiment.
- FIG. 1 is a schematic diagram showing the entire configuration of an apparatus for producing a multi-layer coating according to an embodiment of the present invention.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Drilling Tools (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005511082A JP4396898B2 (ja) | 2003-06-30 | 2004-06-29 | 多元系被膜の製造装置および方法 |
EP04746626A EP1642998B1 (en) | 2003-06-30 | 2004-06-29 | Production device for multiple-system film and coating tool for multiple-system film |
US10/561,246 US20060222767A1 (en) | 2003-06-30 | 2004-06-29 | Production device for multiple-system film and coating tool for multiple-system film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-187257 | 2003-06-30 | ||
JP2003187257 | 2003-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005001153A1 true WO2005001153A1 (ja) | 2005-01-06 |
Family
ID=33549718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/009157 WO2005001153A1 (ja) | 2003-06-30 | 2004-06-29 | 多元系被膜の製造装置と方法および多元系被膜の被覆工具 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060222767A1 (ja) |
JP (1) | JP4396898B2 (ja) |
KR (1) | KR100770938B1 (ja) |
CN (1) | CN100465330C (ja) |
WO (1) | WO2005001153A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009061419A1 (en) | 2007-11-09 | 2009-05-14 | Cook Incorporated | Aortic valve stent graft |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2835445A1 (en) | 2010-04-23 | 2015-02-11 | Sulzer Metaplas GmbH | PVD coating for metal machining |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211376A (ja) * | 1986-02-06 | 1987-09-17 | Mitsubishi Electric Corp | 膜成長制御装置 |
JPH02101160A (ja) * | 1988-10-06 | 1990-04-12 | Asahi Glass Co Ltd | イオンプレーティング方法 |
JPH03193868A (ja) * | 1989-12-21 | 1991-08-23 | Toyota Motor Corp | 薄膜の形成方法 |
JPH0665466U (ja) * | 1993-03-02 | 1994-09-16 | 中外炉工業株式会社 | イオンプレーティング装置 |
JPH06264225A (ja) * | 1993-03-12 | 1994-09-20 | Ulvac Japan Ltd | イオンプレーティング装置 |
JP2001001202A (ja) * | 1999-04-23 | 2001-01-09 | Hitachi Tool Engineering Ltd | 被覆工具 |
JP2002212712A (ja) * | 2001-01-15 | 2002-07-31 | Shin Meiwa Ind Co Ltd | 成膜方法、真空成膜装置の制御装置、及び真空成膜装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0306612B2 (de) * | 1987-08-26 | 1996-02-28 | Balzers Aktiengesellschaft | Verfahren zur Aufbringung von Schichten auf Substraten |
EP0385475A3 (en) * | 1989-03-02 | 1991-04-03 | Asahi Glass Company Ltd. | Method of forming a transparent conductive film |
US5246787A (en) * | 1989-11-22 | 1993-09-21 | Balzers Aktiengesellschaft | Tool or instrument with a wear-resistant hard coating for working or processing organic materials |
US5250779A (en) * | 1990-11-05 | 1993-10-05 | Balzers Aktiengesellschaft | Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field |
EP0496053B1 (de) * | 1991-01-21 | 1995-07-26 | Balzers Aktiengesellschaft | Beschichtetes hochverschleissfestes Werkzeug und physikalisches Beschichtungsverfahren zur Beschichtung von hochverschleissfesten Werkzeugen |
DE29615190U1 (de) * | 1996-03-11 | 1996-11-28 | Balzers Verschleissschutz Gmbh | Anlage zur Beschichtung von Werkstücken |
CN1187469C (zh) * | 1997-09-12 | 2005-02-02 | 巴尔策斯有限公司 | 带有保护层系的刀具及其制造方法 |
-
2004
- 2004-06-29 JP JP2005511082A patent/JP4396898B2/ja not_active Expired - Fee Related
- 2004-06-29 CN CNB2004800184866A patent/CN100465330C/zh not_active Expired - Fee Related
- 2004-06-29 WO PCT/JP2004/009157 patent/WO2005001153A1/ja active Application Filing
- 2004-06-29 KR KR1020057025296A patent/KR100770938B1/ko not_active IP Right Cessation
- 2004-06-29 US US10/561,246 patent/US20060222767A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211376A (ja) * | 1986-02-06 | 1987-09-17 | Mitsubishi Electric Corp | 膜成長制御装置 |
JPH02101160A (ja) * | 1988-10-06 | 1990-04-12 | Asahi Glass Co Ltd | イオンプレーティング方法 |
JPH03193868A (ja) * | 1989-12-21 | 1991-08-23 | Toyota Motor Corp | 薄膜の形成方法 |
JPH0665466U (ja) * | 1993-03-02 | 1994-09-16 | 中外炉工業株式会社 | イオンプレーティング装置 |
JPH06264225A (ja) * | 1993-03-12 | 1994-09-20 | Ulvac Japan Ltd | イオンプレーティング装置 |
JP2001001202A (ja) * | 1999-04-23 | 2001-01-09 | Hitachi Tool Engineering Ltd | 被覆工具 |
JP2002212712A (ja) * | 2001-01-15 | 2002-07-31 | Shin Meiwa Ind Co Ltd | 成膜方法、真空成膜装置の制御装置、及び真空成膜装置 |
Non-Patent Citations (1)
Title |
---|
KIMURA A, ET AL.: "Hot-pressed Ti-Al targets for synthesizing Ti1-xAlxN films by the arc ion plating method", THIN SOLID FILMS, vol. 382, 2001, pages 101 - 105, XP002903405 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009061419A1 (en) | 2007-11-09 | 2009-05-14 | Cook Incorporated | Aortic valve stent graft |
Also Published As
Publication number | Publication date |
---|---|
KR100770938B1 (ko) | 2007-10-26 |
JPWO2005001153A1 (ja) | 2007-09-20 |
US20060222767A1 (en) | 2006-10-05 |
CN100465330C (zh) | 2009-03-04 |
KR20060032159A (ko) | 2006-04-14 |
CN1813079A (zh) | 2006-08-02 |
JP4396898B2 (ja) | 2010-01-13 |
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