WO2004107452B1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- WO2004107452B1 WO2004107452B1 PCT/JP2004/007872 JP2004007872W WO2004107452B1 WO 2004107452 B1 WO2004107452 B1 WO 2004107452B1 JP 2004007872 W JP2004007872 W JP 2004007872W WO 2004107452 B1 WO2004107452 B1 WO 2004107452B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- layer
- channel region
- semiconductor device
- main body
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 81
- 238000004519 manufacturing process Methods 0.000 title claims 6
- 238000000034 method Methods 0.000 title 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/558,671 US7473967B2 (en) | 2003-05-30 | 2004-05-31 | Strained channel finFET device |
JP2005506590A JP4277021B2 (ja) | 2003-05-30 | 2004-05-31 | 半導体装置 |
EP04735510A EP1643560A4 (en) | 2003-05-30 | 2004-05-31 | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-155043 | 2003-05-30 | ||
JP2003155043 | 2003-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004107452A1 WO2004107452A1 (ja) | 2004-12-09 |
WO2004107452B1 true WO2004107452B1 (ja) | 2005-03-17 |
Family
ID=33487345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/007872 WO2004107452A1 (ja) | 2003-05-30 | 2004-05-31 | 半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7473967B2 (ja) |
EP (1) | EP1643560A4 (ja) |
JP (1) | JP4277021B2 (ja) |
CN (1) | CN1799146A (ja) |
WO (1) | WO2004107452A1 (ja) |
Families Citing this family (38)
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US7045401B2 (en) * | 2003-06-23 | 2006-05-16 | Sharp Laboratories Of America, Inc. | Strained silicon finFET device |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
WO2006069340A2 (en) | 2004-12-21 | 2006-06-29 | Carnegie Mellon University | Lithography and associated methods, devices, and systems |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) * | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7575975B2 (en) * | 2005-10-31 | 2009-08-18 | Freescale Semiconductor, Inc. | Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer |
US7615806B2 (en) | 2005-10-31 | 2009-11-10 | Freescale Semiconductor, Inc. | Method for forming a semiconductor structure and structure thereof |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
JP2007207837A (ja) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2007299951A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 半導体装置およびその製造方法 |
WO2007133775A2 (en) * | 2006-05-15 | 2007-11-22 | Carnegie Mellon University | Integrated circuit, device, system, and method of fabrication |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
EP1900681B1 (en) * | 2006-09-15 | 2017-03-15 | Imec | Tunnel Field-Effect Transistors based on silicon nanowires |
US7456471B2 (en) * | 2006-09-15 | 2008-11-25 | International Business Machines Corporation | Field effect transistor with raised source/drain fin straps |
US8772858B2 (en) * | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
US7772048B2 (en) * | 2007-02-23 | 2010-08-10 | Freescale Semiconductor, Inc. | Forming semiconductor fins using a sacrificial fin |
FR2913526B1 (fr) * | 2007-03-09 | 2009-05-29 | Commissariat Energie Atomique | Procede de fabrication d'un transistor a effet de champ a grilles auto-alignees |
EP2001047A1 (en) * | 2007-06-07 | 2008-12-10 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
JP2009076575A (ja) | 2007-09-19 | 2009-04-09 | Elpida Memory Inc | 半導体装置の製造方法 |
JP4966153B2 (ja) * | 2007-10-05 | 2012-07-04 | 株式会社東芝 | 電界効果トランジスタおよびその製造方法 |
US8288756B2 (en) * | 2007-11-30 | 2012-10-16 | Advanced Micro Devices, Inc. | Hetero-structured, inverted-T field effect transistor |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US20110291188A1 (en) * | 2010-05-25 | 2011-12-01 | International Business Machines Corporation | Strained finfet |
JP5713837B2 (ja) | 2011-08-10 | 2015-05-07 | 株式会社東芝 | 半導体装置の製造方法 |
CN103779226B (zh) * | 2012-10-23 | 2016-08-10 | 中国科学院微电子研究所 | 准纳米线晶体管及其制造方法 |
CN103219384B (zh) | 2013-04-03 | 2015-05-20 | 北京大学 | 一种抗单粒子辐射的多栅器件及其制备方法 |
US9293534B2 (en) | 2014-03-21 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of dislocations in source and drain regions of FinFET devices |
CN104241366B (zh) * | 2013-06-07 | 2017-06-13 | 台湾积体电路制造股份有限公司 | FinFET器件的源极区和漏极区中的位错形成 |
DE112013007061T5 (de) * | 2013-06-25 | 2016-01-28 | Intel Corp. | Monolithische dreidimensionale (3D) ICS mit örtlichen ebenenübergreifenden Zwischenverbindungen |
US9443963B2 (en) | 2014-04-07 | 2016-09-13 | International Business Machines Corporation | SiGe FinFET with improved junction doping control |
US9472575B2 (en) | 2015-02-06 | 2016-10-18 | International Business Machines Corporation | Formation of strained fins in a finFET device |
US20170084454A1 (en) * | 2015-09-17 | 2017-03-23 | International Business Machines Corporation | Uniform height tall fins with varying silicon germanium concentrations |
US9837538B2 (en) * | 2016-03-25 | 2017-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0214578A (ja) * | 1988-07-01 | 1990-01-18 | Fujitsu Ltd | 半導体装置 |
US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
JP3543946B2 (ja) * | 2000-04-14 | 2004-07-21 | 日本電気株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP2002057329A (ja) | 2000-08-09 | 2002-02-22 | Toshiba Corp | 縦型電界効果トランジスタ及びその製造方法 |
KR100495023B1 (ko) * | 2000-12-28 | 2005-06-14 | 가부시끼가이샤 도시바 | 반도체 장치 및 그 제조 방법 |
JP2002280568A (ja) * | 2000-12-28 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
US6475869B1 (en) * | 2001-02-26 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of forming a double gate transistor having an epitaxial silicon/germanium channel region |
US6458662B1 (en) * | 2001-04-04 | 2002-10-01 | Advanced Micro Devices, Inc. | Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formed |
JP3647777B2 (ja) * | 2001-07-06 | 2005-05-18 | 株式会社東芝 | 電界効果トランジスタの製造方法及び集積回路素子 |
JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
US6635909B2 (en) * | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
US6800910B2 (en) | 2002-09-30 | 2004-10-05 | Advanced Micro Devices, Inc. | FinFET device incorporating strained silicon in the channel region |
JP4546021B2 (ja) * | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
US6762483B1 (en) | 2003-01-23 | 2004-07-13 | Advanced Micro Devices, Inc. | Narrow fin FinFET |
US6803631B2 (en) * | 2003-01-23 | 2004-10-12 | Advanced Micro Devices, Inc. | Strained channel finfet |
US7304336B2 (en) | 2003-02-13 | 2007-12-04 | Massachusetts Institute Of Technology | FinFET structure and method to make the same |
KR100483425B1 (ko) * | 2003-03-17 | 2005-04-14 | 삼성전자주식회사 | 반도체소자 및 그 제조 방법 |
TWI231994B (en) * | 2003-04-04 | 2005-05-01 | Univ Nat Taiwan | Strained Si FinFET |
US6943407B2 (en) * | 2003-06-17 | 2005-09-13 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
US7045401B2 (en) * | 2003-06-23 | 2006-05-16 | Sharp Laboratories Of America, Inc. | Strained silicon finFET device |
US6921982B2 (en) * | 2003-07-21 | 2005-07-26 | International Business Machines Corporation | FET channel having a strained lattice structure along multiple surfaces |
KR100596508B1 (ko) * | 2003-12-26 | 2006-07-05 | 한국전자통신연구원 | FinFET 및 Fin 채널 제조방법 |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US7279735B1 (en) * | 2004-05-05 | 2007-10-09 | Spansion Llc | Flash memory device |
US6972461B1 (en) * | 2004-06-30 | 2005-12-06 | International Business Machines Corporation | Channel MOSFET with strained silicon channel on strained SiGe |
-
2004
- 2004-05-31 US US10/558,671 patent/US7473967B2/en not_active Expired - Fee Related
- 2004-05-31 CN CNA200480015008XA patent/CN1799146A/zh active Pending
- 2004-05-31 EP EP04735510A patent/EP1643560A4/en not_active Withdrawn
- 2004-05-31 JP JP2005506590A patent/JP4277021B2/ja not_active Expired - Fee Related
- 2004-05-31 WO PCT/JP2004/007872 patent/WO2004107452A1/ja not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP1643560A4 (en) | 2007-04-11 |
CN1799146A (zh) | 2006-07-05 |
JPWO2004107452A1 (ja) | 2006-07-20 |
WO2004107452A1 (ja) | 2004-12-09 |
EP1643560A1 (en) | 2006-04-05 |
JP4277021B2 (ja) | 2009-06-10 |
US20070052041A1 (en) | 2007-03-08 |
US7473967B2 (en) | 2009-01-06 |
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