WO2004101203A1 - タンタルおよび/またはニオブの製造方法 - Google Patents
タンタルおよび/またはニオブの製造方法 Download PDFInfo
- Publication number
- WO2004101203A1 WO2004101203A1 PCT/JP2004/006801 JP2004006801W WO2004101203A1 WO 2004101203 A1 WO2004101203 A1 WO 2004101203A1 JP 2004006801 W JP2004006801 W JP 2004006801W WO 2004101203 A1 WO2004101203 A1 WO 2004101203A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tantalum
- niobium
- salt
- particles
- reaction vessel
- Prior art date
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 39
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052758 niobium Inorganic materials 0.000 title claims abstract description 25
- 239000010955 niobium Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 150000003839 salts Chemical class 0.000 claims abstract description 48
- 239000002245 particle Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000007865 diluting Methods 0.000 claims abstract description 14
- 235000002639 sodium chloride Nutrition 0.000 claims description 47
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical group [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 13
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 10
- 235000003270 potassium fluoride Nutrition 0.000 claims description 10
- 239000011698 potassium fluoride Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 239000001103 potassium chloride Substances 0.000 claims description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- -1 niobium potassium fluoride salt Chemical compound 0.000 claims description 2
- 239000011164 primary particle Substances 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 27
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000003638 chemical reducing agent Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- NUDNTLHELCPKLL-UHFFFAOYSA-G [Ta+5].[F-].[Ca+2].[F-].[F-].[F-].[F-].[F-].[F-] Chemical compound [Ta+5].[F-].[Ca+2].[F-].[F-].[F-].[F-].[F-].[F-] NUDNTLHELCPKLL-UHFFFAOYSA-G 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- FTPUNAWAGWERLA-UHFFFAOYSA-G dipotassium;heptafluoroniobium(2-) Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[F-].[K+].[K+].[Nb+5] FTPUNAWAGWERLA-UHFFFAOYSA-G 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- CCFRLZZLAHTWAU-UHFFFAOYSA-M potassium chloride hydrofluoride Chemical compound [Cl-].[K+].F CCFRLZZLAHTWAU-UHFFFAOYSA-M 0.000 description 1
- APLLYCDGAWQGRK-UHFFFAOYSA-H potassium;hexafluorotantalum(1-) Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[K+].[Ta+5] APLLYCDGAWQGRK-UHFFFAOYSA-H 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- SRWFBFUYENBCGF-UHFFFAOYSA-M sodium;chloride;hydrochloride Chemical compound [Na+].Cl.[Cl-] SRWFBFUYENBCGF-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Definitions
- the present invention relates to a method for producing tantalum and / or niobium suitable for an anode body of an electrolytic capacitor (capacitor).
- the tantalum or niobium powder manufacturing method is based on diluting tantalum or niobium-containing metal salts such as futanari tantalum or niobium fluoride in dilute salt.
- the method of reducing at a high temperature of 700 ° C. or more using lithium, potassium, or the like is general.
- This reduction method is usually performed in a nickel alloy or stainless steel reaction vessel.
- the reaction formula for obtaining tantalum by reducing heptafluorotantalic acid power rim with sodium is as follows.
- An object of the present invention is to provide a method for producing tantalum and Z or niobium by reducing a metal salt containing tantalum and / or niobium in a dilute salt, to minimize moisture absorption during handling, and to further reduce the reaction vessel
- the purpose is to reduce the amount of moisture brought in with the air contained within.
- the gist of the present invention is to provide a method for producing tantalum and Z or niobium by reducing a metal salt containing tantalum and / or niobium in a dilute salt, wherein the particles are # 100 or larger particles by a sieve weight method.
- a method for producing tantalum and z or niobium characterized by using a dilute salt containing at least 80 wt%.
- the dilute salt in a method of reducing tantalum and a metal salt containing Z or niobium in a dilute salt to produce tantalum and / or niobium, is used as a dilute salt by a sieve weight method.
- a particle larger than (149 ⁇ or more) that is, a particle containing 80% by weight or more of particles corresponding to the residue on the # 100 sieve.
- a fluorinated lithium salt, a halide or the like is preferable.
- potassium tantalum fluoride, niobium calcium fluoride, tantalum pentachloride, niobium pentachloride and the like can be mentioned.
- the diluting salt is usually selected from potassium fluoride, potassium chloride, sodium chloride or a mixture containing them.
- it is a eutectic salt such as potassium fluoride monochloride and sodium chloride monochloride.
- the proportion of # 100 or larger particles is at least 80 wt%, preferably at least 95 wt%.
- the particles do not form # 100 or larger particles by agglomeration of the fine powder, but the primary particles themselves are # 100 or larger particles. It is suitable.
- the above-mentioned metal salt containing tantalum or niobium is diluted with the above-mentioned diluting salt, and is brought into contact with a reducing agent under stirring at a temperature of 700 ° C or more, for example, 800 ° C to 900 ° C, Reduced at high temperatures.
- a reducing agent include alkali metal such as sodium, potassium, calcium, and magnesium, or alkaline earth metal.
- this reaction is carried out by heating the above-mentioned diluted salt to the above-mentioned temperature to form a melt, and adding the above-mentioned metal salt and reducing agent to the melt.
- the dilution ratio of the metal salt with the diluting salt is preferably about 2 to 10 times.
- the present invention it is possible to minimize moisture absorption during handling by increasing the particle size of the dilute salt to be subjected to the reaction, thereby reducing the surface area per unit volume of the dilute salt as compared with the conventional dilute salt. .
- the bulk density of the dilute salt is increased, voids between the particles are reduced, and the moisture brought in together with the air contained in the reaction vessel is reduced. The amount may be reduced.
- the reaction product obtained by reducing the metal salt in the diluted salt as described above is cooled, and the obtained lump is sufficiently washed with water, a weakly acidic aqueous solution, etc. to remove the diluted salt.
- the obtained tantalum and / or niob powder is subjected to a high temperature treatment under an inert atmosphere, usually at a temperature of 900 to 150 ° C. The resulting mass is crushed to obtain tantalum and Z or zob powder.
- the manufacture of the capacitor anode body itself can be by conventional methods.
- the tantalum and Z or niobium powder obtained by the above-mentioned high-temperature treatment are pressure-formed into a predetermined shape using a binder such as polybutyl alcohol or camphor in an amount of about 1 to 5 wt%, and then under vacuum conditions.
- Sintering is performed at a temperature 0 to 200 ° C. higher than the above high temperature treatment temperature to obtain a porous sintered body.
- the obtained porous sintered body is used as an anode.
- a solid electrolytic capacitor and a cathode are formed on the surface thereof, and a solid electrolytic capacitor is obtained by a conventional method such as coating with a resin.
- Example 2 After drying the reaction vessel made of nickel alloy at 130 ° C, potassium fluoride (85 wt% of particles of # 100 or more) (Example 1) and fluoride were used as diluting salts. After drying using potassium + chloride reamer (# 100 or more particles: 82 wt%) (Example 2), the reaction vessel was dried by a dryer. Was filled. After this, close the lid and purge with argon gas.
- the tantalum powder obtained in Example 1 had few impurities and had sufficient purity to be used for the anode body of the capacitor.
- the particle size of the diluted salt was measured as follows.
- potassium fluoride (# 100 or more particles at 98 wt%) was used as a diluting salt (Example 3), Lithium + potassium chloride (99 wt% or more of particles of # 100 or more) (Example 4) (6 wt%) (Example 5), and then filled into a reaction vessel from a drier. After this, the lid was closed and replaced with argon gas sufficiently. This was heated to 800 ° C. and melted, and then tantalum calcium fluoride was reduced using sodium metal as a reducing agent. After cooling, the lid was opened, the product was washed with water, and further washed with a mixed acid. As a result, a tantalum powder containing impurities as shown in Table 1 was obtained.
- the tantalum powders obtained in Examples 3 to 5 had few impurities and had sufficient purity to be used for the anode body of the capacitor.
- the amount of water entering the reaction vessel can be reduced, and the elution and mixing of impurities generated by the reaction between the reaction vessel and water can be suppressed. Tantalum and / or niobium powder can be obtained.
- porous sintered body using the metal powder as a raw material can be suitably used as a positive electrode of an electrolytic capacitor having excellent characteristics such as low leakage current and high pressure resistance, and is industrially useful. It is. Industrial applications
- the present invention it is possible to provide a method for suppressing the impurities of tantalum and / or niobium and stably producing tantalum and / or Z or niobium powder having excellent characteristics as a solid electrolytic capacitor anode body.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003137683A JP2004339567A (ja) | 2003-05-15 | 2003-05-15 | タンタルおよび/またはニオブの製造方法 |
JP2003-137683 | 2003-05-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004101203A1 true WO2004101203A1 (ja) | 2004-11-25 |
Family
ID=33447262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/006801 WO2004101203A1 (ja) | 2003-05-15 | 2004-05-13 | タンタルおよび/またはニオブの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2004339567A (ja) |
WO (1) | WO2004101203A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05508686A (ja) * | 1990-05-17 | 1993-12-02 | キャボット コーポレイション | 高表面積、低金属不純物のタンタル粉末の製造方法 |
-
2003
- 2003-05-15 JP JP2003137683A patent/JP2004339567A/ja active Pending
-
2004
- 2004-05-13 WO PCT/JP2004/006801 patent/WO2004101203A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05508686A (ja) * | 1990-05-17 | 1993-12-02 | キャボット コーポレイション | 高表面積、低金属不純物のタンタル粉末の製造方法 |
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JP2004339567A (ja) | 2004-12-02 |
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