Classifications

• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C9/00—Alloys based on copper
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
  • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Definitions

• the invention relates to a substrate material made of copper alloy, to be used in high-temperature coating processes.
• the alloy is particularly suited to be used when manufacturing products where a good thermal conductivity or electroconductivity is required of the substrate material. Such products are for example solar panels.
• Copper is used as a substrate material in various coated products, where a good thermal or electroconductivity is required of the substrate material. With copper, its electroconductivity and thermal conductivity are practically proportional to each other. Often this kind of product is manufactured at a relatively high temperature. At the temperatures required by these operations, for instance within the range of about 230 - 350° C, pure copper may already be too soft. Therefore the employed material is often so-called DHP copper containing phosphorus as an alloy ingredient for example about 0.02%. However, phosphorus alloying weakens the electric and thermal conductivity.
• a solar panel used for heat production can be manufactured for example so that copper strip is coiled in a vacuum chamber, where titanium is vaporized, and wherein simultaneously is conducted nitrogen and oxygen. The vaporized titanium reacts with nitrogen and oxygen, and the created TiNOx particles stick onto the strip surface. At the moment of coating, the strip temperature is over 250° C, momentarily even 350° C. After this first coating step, there follows a second step, where the strip is coiled back, and a quartz coating is vaporized on the surface thereof. In this product, copper is a good substrate material owing to its good thermal conductivity, but also to its weak emissive capacity. The end result is a plate that efficiently absorbs thermal radiation.
• the alloy is particularly suited to be used in products that are manufactured at high temperatures, for instance in the range 230 - 390° C.
• Possible production operations can be for example sputtering, vacuum vaporizing, thermal spraying and hot tinning.
• the Mg content of an oxygen-free copper alloy according to the invention is over 30 ppm, preferably over 50 ppm.
• the Mg content is below 180 ppm, preferably below 150 ppm.
• the oxygen content of the alloy is not higher than 10 ppm, preferably not higher than 5 ppm, such as 1 - 3 ppm.
• the temperature resistance of copper is remarkably improved.
• the temperature resistance of copper is generally expressed by the so-called half-softening temperature (V/2).
• V/z is generally defined with a degree of deformation of 40 % and 94 %.
• the electroconductivity of copper is generally expressed by the so-called IACS- value (International Anneal Copper Standard). It expresses the electroconductivity in percentages of the electroconductivity of standard non- alloyed copper.
• the electroconductivity of an oxygen-free copper quality is at least 100 % IACS.
• the half-softening temperature of a typical DHP copper, with a degree of deformation that is 40%, is about 355° C, and the electroconductivity is about 82% IACS.
• the half-softening temperature V/2 of a copper alloy according to the invention is at least 340°C, preferably at least 380°C. With a 94% degree of deformation, the V/2 is at least 300°C, preferably at least 335°C. Irrespective of the alloying, the electroconductivity still remains on a high level (over 100 % IACS). Preferably the conductivity is at least 101 % IACS.
• magnesium raises the recrystallization temperature of pure copper.
• Mg atoms are larger than Cu atoms, wherefore the lattice structure is distorted, and tensions are created. Consequently the moving of dislocations becomes more difficult.
• Mg alloyed copper can be manufactured by the same manufacturing methods as other oxygen-free copper qualities, i.e. by slab or rod casting either as a horizontal or vertical casting.
• a suitable stage for instance in the casting furnace, in the melt there is added a required quantity of magnesium.
• magnesium is sensitive to react with oxygen, special attention must be paid to protection from air.
• Casting is generally followed by thermal treatment and working.
• a typical manufacturing route could be slab casting downwards and working by hot and cold rolling.
• magnesium can result in secondary grain structure, which must be taken into account when choosing the working temperature.
• Phosphorus, silicon and sulfur may react with magnesium, thus weakening the improvement of temperature resistance. Therefore the total content of these impurities is preferably not higher than 10 ppm.
• the copper according to the invention can be used as substrate material particularly in coating targets where a good temperature resistance is required. These are for example sputtering, vacuum vaporizing, thermal spraying and hot tinning. For instance in hot tinning, the temperature can be for example 230 - 320° C, and in vacuum vaporizing for example about 350° C.
• Magnesium has earlier been used as a microalloying ingredient, generally in very small contents.
• Other alloy ingredients are generally used at the same time.
• these types of alloys which are used for producing connector wire employed in semiconductor technology. By melting, the wire is formed into drops that have a perfect ball shape. Said material also has a good tensile strength.
• magnesium is suggested as an alloy ingredient also in the publication JP-A-63140052, for example. Here magnesium, with the content 3 - 10 ppm, lowers the softening temperature of copper.
• alloy ingredients can be used. These are particularly Ag and P. It is well known that Ag raises the half- softening temperature. Its content is advantageously not higher than 500 ppm. Other possible alloy ingredients are for instance S, Sn, Zn, Ni, Si and Te. Advantageously the content is not higher than 50 ppm. Also Sn raises the half- softening temperature, but it is not as efficient as Mg, and what is more, it lowers conductivity to a larger degree.
• Mg alloyed oxygen-free copper alloys there were manufactured Mg alloyed oxygen-free copper alloys, in which there were alloyed Mg 50, 100 and 150 ppm of the alloy weight. The temperature resistance and electroconductivity of the alloys was measured.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Conductive Materials (AREA)
• Insulated Metal Substrates For Printed Circuits (AREA)

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Citations (4)

• 2003
  • 2003-04-03 FI FI20030507A patent/FI114809B/fi active
• 2004
  • 2004-03-29 TW TW093108504A patent/TW200508404A/zh unknown
  • 2004-04-01 WO PCT/FI2004/000198 patent/WO2004087975A1/en active Application Filing
  • 2004-04-01 DE DE112004000528T patent/DE112004000528T5/de not_active Withdrawn

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