WO2004077573A3 - Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren - Google Patents

Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren Download PDF

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Publication number
WO2004077573A3
WO2004077573A3 PCT/EP2004/001541 EP2004001541W WO2004077573A3 WO 2004077573 A3 WO2004077573 A3 WO 2004077573A3 EP 2004001541 W EP2004001541 W EP 2004001541W WO 2004077573 A3 WO2004077573 A3 WO 2004077573A3
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WO
WIPO (PCT)
Prior art keywords
state
electronic component
voltage source
source inverter
control method
Prior art date
Application number
PCT/EP2004/001541
Other languages
English (en)
French (fr)
Other versions
WO2004077573A2 (de
Inventor
Mark-Matthias Bakran
Hans-Guenter Eckel
Original Assignee
Siemens Ag
Mark-Matthias Bakran
Hans-Guenter Eckel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Mark-Matthias Bakran, Hans-Guenter Eckel filed Critical Siemens Ag
Priority to US10/547,175 priority Critical patent/US7582939B2/en
Priority to EP04712009A priority patent/EP1597771A2/de
Priority to JP2006501876A priority patent/JP2006519485A/ja
Publication of WO2004077573A2 publication Critical patent/WO2004077573A2/de
Publication of WO2004077573A3 publication Critical patent/WO2004077573A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Die Erfindung betrifft eine Halbleiterdiode, ein elektronisches Bauteil und einen Spannungszwischenkreisumrichter. Erfindungsgemäß ist die Halbleiterdiode (9) mit mindestens einem pn-Übergang die zwischen einem p-dotierten Gebiet (6)und einem n-dotierten Gebiet (7), die zwischen einem ersten Zustand und einem zweiten Zustand umschaltbar ist, wobei der zweite Zustand im Vergleich zum ersten Zustand einen größeren Durchlasswiderstand sowie eine kleinere Speicherladung aufweist und der pn-Übergang sowohl im ersten Zustand als auch im zweiten Zustand sperrfähig ist mit jeweils mindestens einem vorgegebenen Sperrvermögen. Ausserdem gehören zur Halbleiterdiode eine Kathode (3), eine Anode (2) und ein Gate (5), welches mit einer Oxidschicht (4) eine MOS-Struktur bildet. Somit erhält man eine MOS-gesteuerte Diode, bei der der Übergang vom Durchlass- in den Sperrfall vereinfacht und damit unkritischer in Bezug auf die zeitliche Abfolge der Steuerimpulse ist.
PCT/EP2004/001541 2003-02-26 2004-02-18 Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren WO2004077573A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/547,175 US7582939B2 (en) 2003-02-26 2004-02-18 Semiconductor diode, electronic component and voltage source inverter
EP04712009A EP1597771A2 (de) 2003-02-26 2004-02-18 Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren
JP2006501876A JP2006519485A (ja) 2003-02-26 2004-02-18 半導体ダイオード、電子構成部品、電力変換装置および制御方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10308313.8 2003-02-26
DE10308313A DE10308313B4 (de) 2003-02-26 2003-02-26 Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren

Publications (2)

Publication Number Publication Date
WO2004077573A2 WO2004077573A2 (de) 2004-09-10
WO2004077573A3 true WO2004077573A3 (de) 2004-12-23

Family

ID=32863909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/001541 WO2004077573A2 (de) 2003-02-26 2004-02-18 Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren

Country Status (6)

Country Link
US (1) US7582939B2 (de)
EP (1) EP1597771A2 (de)
JP (1) JP2006519485A (de)
CN (1) CN100483736C (de)
DE (1) DE10308313B4 (de)
WO (1) WO2004077573A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004036278B4 (de) * 2004-07-27 2006-07-06 Siemens Ag Halbleiterbauelement und Verfahren zum Betreiben des Halbleiterbauelements als elektronischer Schalter
DE102004042758B4 (de) 2004-09-03 2006-08-24 Infineon Technologies Ag Halbleiterbauteil
DE102005019860B4 (de) * 2005-04-28 2010-11-18 Siemens Ag Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter
DE102005020805A1 (de) * 2005-05-04 2006-11-16 Infineon Technologies Ag Halbbrückenschaltung mit Freilaufdioden, Ansteuerschaltung und Verfahren zum Ansteuern einer solchen Halbbrückenschaltung
US7888775B2 (en) 2007-09-27 2011-02-15 Infineon Technologies Ag Vertical diode using silicon formed by selective epitaxial growth
DE102007060188A1 (de) * 2007-12-14 2009-06-25 Siemens Ag Antriebssystem und zugehöriges Steuerverfahren
JP5333342B2 (ja) * 2009-06-29 2013-11-06 株式会社デンソー 半導体装置
CN101666919B (zh) * 2009-09-21 2012-06-27 浙江大学 一种具有刻蚀容差的硅狭缝波导电极
DE102011003938A1 (de) 2011-02-10 2012-08-16 Siemens Aktiengesellschaft Verfahren zur Steuerung zweier elektrisch in Reihe geschalteter rückwärts leitfähiger IGBTs einer Halbbrücke
US9184255B2 (en) 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
DE102013211411A1 (de) 2013-06-18 2014-12-18 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur Überwachung eines Leistungshalbleiterschalters
CN105379086B (zh) 2013-07-10 2018-11-20 株式会社电装 驱动控制装置
DE102013213986B4 (de) 2013-07-17 2016-02-04 Siemens Aktiengesellschaft Dreipunkt-Stromrichter
US9135937B1 (en) * 2014-05-09 2015-09-15 Western Digital (Fremont), Llc Current modulation on laser diode for energy assisted magnetic recording transducer
EP3002866B1 (de) 2014-09-30 2021-09-08 Siemens Aktiengesellschaft Spannungszwischenkreis-Stromrichter in Fünfpunkttopologie
GB2534818A (en) * 2014-11-18 2016-08-03 Ideal Power Inc Methods, systems, and devices for active charge control diodes
WO2016159948A1 (en) 2015-03-30 2016-10-06 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
US9685947B2 (en) 2015-03-30 2017-06-20 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
CN107218176B (zh) 2016-03-21 2020-05-19 通用电气公司 风力节距调整系统

Citations (1)

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US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure

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JP2524370B2 (ja) * 1986-12-05 1996-08-14 ゼネラル・エレクトリック・カンパニイ 半導体デバイスの製造方法
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
DE4407279C1 (de) * 1994-03-04 1994-10-13 Siemens Ag Halbleiterbauelement für den Überspannungsschutz von MOSFET und IGBT
JP3779401B2 (ja) * 1996-11-29 2006-05-31 株式会社東芝 ダイオードの駆動方法
SE9802908D0 (sv) * 1998-08-31 1998-08-31 Abb Research Ltd Electric circuit
JP2001161032A (ja) * 1999-12-01 2001-06-12 Canon Inc 系統連系パワーコンディショナ及びそれを用いた発電システム
DE10011523A1 (de) 2000-03-09 2001-09-20 Siemens Ag Stromversorgungsschaltung mit Silizium-Karbid-Bauelementen
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Non-Patent Citations (2)

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Also Published As

Publication number Publication date
DE10308313B4 (de) 2010-08-19
US20060071280A1 (en) 2006-04-06
CN1754263A (zh) 2006-03-29
JP2006519485A (ja) 2006-08-24
US7582939B2 (en) 2009-09-01
DE10308313A1 (de) 2004-09-16
CN100483736C (zh) 2009-04-29
WO2004077573A2 (de) 2004-09-10
EP1597771A2 (de) 2005-11-23

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