WO2004072736A1 - Composition de colle a base de ag destinee a la formation de micro-electrodes et micro-electrode formee au moyen de cette composition - Google Patents

Composition de colle a base de ag destinee a la formation de micro-electrodes et micro-electrode formee au moyen de cette composition Download PDF

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Publication number
WO2004072736A1
WO2004072736A1 PCT/KR2004/000258 KR2004000258W WO2004072736A1 WO 2004072736 A1 WO2004072736 A1 WO 2004072736A1 KR 2004000258 W KR2004000258 W KR 2004000258W WO 2004072736 A1 WO2004072736 A1 WO 2004072736A1
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Prior art keywords
group
paste composition
powders
composition
microelectrode
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PCT/KR2004/000258
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English (en)
Inventor
Chan-Seok Park
Byung-Joo Chung
Bong-Gi Kim
Young-Gil Yoo
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Dongjin Semichem Co. Ltd.
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Publication of WO2004072736A1 publication Critical patent/WO2004072736A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/22—Electrodes, e.g. special shape, material or configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/22—Electrodes
    • H01J2211/225—Material of electrodes

Definitions

  • the present invention relates to a high viscosity Ag paste composition for microelectrode formation, and a microelectrode formed using the same.
  • Plasma display panels (hereinafter, referred to as 'PDPs') have advantages over liquid crystal panels such as fast response speed and large size, and thus, have been currently used in various areas. Electrodes for PDPs had been conventionally fabricated by patterning of an electrode material using a screen printing method. However, the conventional screen printing method requires great skill, and during screen printing, a paste may flow on a substrate due to low viscosity. Also, due to low precision by a screen, it is difficult to accomplish a high precision, large screen pattern required in PDPs. In addition, the conventional screen printing method has disadvantages in that short circuit or disconnection may be caused by the screen during printing and the sintering temperature is as high as 1,000 °C or more.
  • the photolithography is a method forming a desired pattern by printing a photosensitive resin composition, in which conductive micro-powders are dispersed, to form a uniform thick film, and exposing the thick film thus formed to light using a desired shaped mask, followed by development with an alkaline developer.
  • the photosensitive resin composition is stable against external forces such as static electricity on the surfaces of the conductive micro-powders to maintain a uniform dispersion state, has a low crystallinity of a polymer resin, and has good adhesion with a glass surface and good thermal decomposition property. Disclosure of Invention Technical Problem
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a high viscosity Ag paste composition for microelectrode formation.
  • the Ag paste composition can be applied in a sintering process of 600 °C or less. Also, due to high viscosity, the Ag paste composition is suitable for formation of a precise microelectrode that cannot be formed by a conventional screen printing method, and has good printing property. In addition, because a surfactant and an organic solvent are not separately used, the Ag paste composition can be prepared simply and economically, and is environmental friendly.
  • FIG. 1 is a scanning electron microphotograph (SEM) after developing a 50 /an pattern formed of a Ag paste composition according to the present invention
  • FIG. 2 is a fractured surface SEM after developing a 50 /an pattern formed of a Ag paste composition according to the present invention
  • FIG. 3 is a SEM after sintering a 50 /an pattern formed of a Ag paste composition according to the present invention
  • FIG. 4 is a fractured surface SEM after sintering a 50 /an pattern formed of a Ag paste composition according to the present invention.
  • Ag paste composition for microelectrode formation including: [15] a) 60 to 80 wt% of Ag powders;
  • the negative photoresist composition includes: [20] a) 30 to 70 wt% of a photoresist acrylate copolymer represented by I rmula 1 below: [21] I rmula 1
  • R is hydrogen, phenyl group, benzyl group, phenyl group substituted with
  • R is ethylhexyl group, isobutyl group, tert-butyl group, octyl group,
  • R is hydrogen or methyl group
  • R is hydrogen or methyl group
  • n is an integer of 8 to 40
  • n is 1 or 2, or
  • R is hydrogen or carboxyl group; R is phenyl group, carboxyl group, or -
  • R is hydrogen or -CH COOH group
  • R , R , n , and n are as defined
  • the present invention provides a high viscosity Ag paste composition for microelectrode formation, which includes: a) 60 to 80 wt% of Ag powders; b) 1 to 10 wt% of an inorganic binder; c) 0.001 to 1 wt% of a stabilizer; and d) 15 to 35 wt% of a negative photoresist composition that disperses conductive micro-powders and is soluble in an alkaline.
  • the conductive micro-powders as used herein are Ag powders.
  • the Ag powders are used in the Ag paste composition in an amount of 60 to 80 wt%, preferably 65 to 75 wt%.
  • the content of the Ag powders is less than 60 wt%, the density of the Ag powders decreases, thereby increasing surface porosity after pattern formation and sintering. As a result, electric resistance increases and short circuit may be caused. Also, due to low viscosity, the Ag paste composition may flow on a glass substrate during printing. [36] On the other hand, if the content of the Ag powders exceeds 80 wt%, due to excessively high viscosity, there may arise a printing problem in that printing on a glass substrate is impossible or the glass substrate is not separated from a screen mask. Also, low smoothness after printing may cause a localized thickness difference and a mesh mark of a screen mask. In addition, as the density of the Ag powders increases, 'under cut' phenomenon may worsen.
  • the average particle size of the Ag powders is preferably in a range of 0.3 to 3 /an, more preferably 0.5 to 2 /an, most preferably 0.6 to 1.3 /an
  • the purity of the Ag powders is preferably 96% or more, more preferably 98% or more. This is because as the purity of the Ag powders decreases, due to impurities, electric resistance may be increased after sintering.
  • the Ag paste composition of the present invention includes the inorganic binder to sinter and adhere the conductive powders on a glass substrate.
  • the inorganic binder is used in an amount of 1 to 10 wt%, preferably 2 to 6 wt%, based on the total weight of the Ag paste composition.
  • the content of the inorganic binder is less than 1 wt%, the adhesion between a glass substrate and an electrode after sintering decreases, thereby causing electrode separation. On the other hand, if the content of the inorganic binder exceeds 10 wt%, the electric resistance of the electrode after sintering may increase or a short circuit may be caused.
  • the inorganic binder is one or more selected from the group consisting of lead borosilicate frit, bismuth borosilicate frit, B O • SiO • MO, and B O • SiO •
  • M is a divalent metal ion and M' is a monovalent metal ion.
  • the particle shape of the inorganic binder may be spherical but is not limited thereto.
  • the average particle size of the inorganic binder is preferably in a range of 0.3 to 3 /an, more preferably 0.5 to 2 /an, most preferably 0.6 to 1.3 /an
  • the inorganic binder has a glass transition temperature (Tg) of 360 to
  • Ts glass softening temperature
  • the sintering of the inorganic binder is initiated in a state wherein an organic material is incompletely decomposed. Therefore, an organic material may be present in a pattern, thereby lowering the performance of the pattern.
  • the glass transition temperature and the glass softening temperature respectively exceed 500 °C and 550 °C, the sintering of the inorganic binder may not be completed. Therefore, the adhesion between a microelectrode and a glass substrate may decrease, pattern characteristics may worsen, and pattern detachment may occur.
  • the inorganic binder it is preferable to store the inorganic binder in a place free of moisture. This is because moisture adsorbed in the inorganic binder may promote gelation of the paste composition. In this regard, it is preferable to dry the inorganic binder at a temperature of 80 to 350 °C in order for a foreign substance not to be attached to the surface of the inorganic binder. If the inorganic binder is stored at a temperature of more than 350 °C which is above transition temperature, the inorganic binder is out of powder phase, and thus, may not be used in the Ag paste composition.
  • the Ag paste composition of the present invention includes the stabilizer to prevent the gelation of the paste composition, maintain storage stability, and control a development rate.
  • the stabilizer is used in an amount of 0.001 to 1 wt%, preferably 0.005 to 1 wt%, most preferably 0.01 to 0.6 wt%, based on the total weight of the Ag paste composition.
  • the content of the stabilizer is less than 0.001 wt%, gelation of the paste easily occurs. On the other hand, if it exceeds 1 wt%, the viscosity of the composition may decrease or pattern formation may not occur.
  • An antioxidant generally used for example, benzotriazole, ascorbic acid, phosphoric acid, phosphorous acid, or a salt thereof may be used as the stabilizer but are not limited thereto.
  • the Ag paste composition of the present invention includes the negative photoresist composition that facilitates dispersion of the conductive micro-powders such as Ag powders due to high viscosity and can be developed at high speed in an alkaline developer.
  • the negative photoresist composition is used in an amount of 15 to 35 wt%, preferably 20 to 35 wt%, and most preferably 25 to 35 wt%, based on the total weight of the Ag paste composition.
  • the content of the negative photoresist composition exceeds 35 wt%, pores may be present in an electrode during electrode formation. As a result, electrode resistance increases, thereby causing short circuit during circuit driving. On the other hand, if it is less than 15 wt%, it is difficult to obtain a desired electrode pattern.
  • the negative photoresist composition includes:
  • R is hydrogen, phenyl group, benzyl group, phenyl group substituted with nitro group, phenyl group substituted with halogen, benzyl group substituted with nitro group, alkyl group of C to C , or alkyl group of C to C substituted with hydroxyl group;
  • R is ethylhexyl group, isobutyl group, tert-butyl group, octyl group,
  • R is hydrogen or methyl
  • R is hydrogen or methyl group
  • n is an integer of 8 to 40
  • n is 1 or 2, or
  • R is hydrogen or carboxyl group; R is phenyl group, carboxyl group, or -
  • R is hydrogen or -CH COOH group
  • R , R , n , and n are as defined
  • the acrylate copolymer of Ibrmula 1 has a viscosity of 10,000 to 20,000 cP, and a molecular weight of 15,000 to 50,000, more preferably, 25,000 to 30,000.
  • the acrylate copolymer has preferably a glass transition temperature of 100 °C or more. If the glass transition temperature is less than 100 °C, due to strong adhesion, printing related problems may be caused.
  • Examples of a monomer that can be used in preparation of the acrylate copolymer include an unsaturated carboxylic acid, an aromatic monomer, a self-plasticizable monomer, and an acrylic monomer except the self-plasticizable monomer.
  • the unsaturated carboxylic acid is used to render the composition soluble in an alkaline.
  • the unsaturated carboxylic acid include acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, vinyl acetic acid, and an anhydride thereof.
  • the unsaturated carboxylic acid is used in an amount of 20 to 50 wt%, based on the total weight of the acrylate copolymer. If the content of the unsaturated carboxylic acid exceeds 50 wt%, gelation easily occurs during polymerization, adjustment of the degree of polymerization is difficult, and storage stability of the resin composition during exposure to light is deteriorated. On the other hand, if the content of the unsaturated carboxylic acid is less than 20 wt%, time required for developing increases.
  • the aromatic monomer is used to provide adhesion with a glass surface during developing and stable pattern formation.
  • the aromatic monomer include styrene, benzylmethacrylate, benzylacrylate, phenylacrylate, phenylmethacrylate, 2- or 4-nitrophenylacrylate, 2- or 4-nitrophenylmethacrylate, 2- or 4-nitrobenzylmethacrylate, 2- or 4-chlorophenylacrylate, and 2- or 4-chlorophenylmethacrylate.
  • the aromatic monomer is preferably used in an amount of 15 to 45 wt%, more preferably 20 to 40 wt%, based on the total weight of the acrylate copolymer.
  • the content of the aromatic monomer exceeds 45 wt%, time required for developing increases. Also, due to increased heat resistance, a photosensitive resin is left during sintering thereby decreasing intrinsic electrode characteristics. On the other hand, if the content of the aromatic monomer is less than 15 wt%, adhesion with a glass surface during developing decreases. As a result, pattern detachment easily occurs and pattern straightness is deteriorated, which make it difficult to obtain a stable pattern.
  • the self-plasticizable monomer serves to adjust the degree of polymerization and to decrease crystallinity.
  • the self-plasticizable monomer include 2-ethylhexyl(meth)acrylate, isobutyl(meth)acrylate, tert-butyl(meth)acrylate, octyl(meth)acrylate, 3-methoxybutyl(meth)acrylate, and methoxypropy- leneglycol(meth)acrylate.
  • the self-plasticizable monomer is preferably used in an amount of 3 to 15 wt%, more preferably 5 to 10 wt%, based on the total weight of the acrylate copolymer.
  • the content of the self-plasticizable monomer exceeds 15 wt%, pattern detachment during developing worsens and pattern straightness is deteriorated. On the other hand, if the content of the self-plasticizable monomer is less than 3 wt%, the degree of polymerization increases, thereby causing gelation. Even when gelation does not occur, a formed pattern is easily damaged after developing.
  • the acrylate monomer except the self-plasticizable acrylate monomer serves to adjust the glass transition temperature, the adhesion with a substrate, and the polarity of the acrylate copolymer.
  • the acrylate monomer include 2-hydroxyethyl(meth)acrylate, 2-hydroxyoctyl(meth)acrylate, methyl(meth)acrylate, ethyl(meth)acrylate, and n-butylacrylate.
  • the acrylate monomer is preferably used in an amount of 10 to 30 wt%, based on the total weight of the acrylate copolymer, considering the glass transition temperature and heat resistance and hydrophilicity with a developer of the acrylate copolymer.
  • the acrylate copolymer can be obtained by polymerization of the above-described four monomers in a solvent with polarity appropriate to prevent the gelation of the monomers.
  • a solvent with polarity appropriate to prevent the gelation of the monomers.
  • the solvent include carbitolacetate, gammabuty- rolactone, diethyleneglycolbutylether, trimethylpentanediolmonoisobutyrate, and dipropyleneglycolmonoethylether.
  • the acrylate copolymer resin of Ibrmula 1 or 2 is used in an amount of 30 to 70 wt%. If the content of the acrylate copolymer is less than 30 wt%, pattern formation becomes difficult. If it exceeds 70 wt%, the dispersion characteristics of powders becomes poor.
  • the photopolymerization initiator may be one or a mixture of triazines, benzophenones, acetophenones, imidazoles, and thioxantones.
  • examples of the photopolymerization initiator include 2,4-bistrichloromethyl-6-p-methoxystyryl-s-triazine,
  • the photopolymerization initiator is preferably used in an amount of 0.5 to 10 wt%, more preferably 2 to 4 wt%. If the content of the photopolymerization initiator exceeds 10 wt%, storage stability may be decreased, and due to high degree of curing pattern detachment during developing may worsen. On the other hand, if it is less than 0.5 wt%, due to low sensitivity, normal pattern formation becomes difficult and pattern straightness worsens.
  • the photopolymerizable monomer may be one or a mixture of poly functional acrylate derivatives.
  • the photopolymerizable monomer include 1,4-butanediolediacrylate, 1,3-butyleneglycoldiacrylate, ethyleneglycoldiacrylate, diethyleneglycoldiacrylate, triethyleneglycoldiacrylate, polyethyleneglycoldiacrylate, dipentaerythritolkisacrylate, dipentaerythritolhydrox- ypentacrylate, glyceroldiacrylate, trimethylolpropanetrimethacrylate, pentaerythri- toltrimethacrylate, pentaerythntoldimethacrylate, sorbitoltnmethacrylate, bisphenol A diacrylate derivative, trimethylolpropanetriacrylate, and dipentaerythritolpolyacrylate.
  • the photopolymerizable monomer is preferably used in an amount of 10 to 40 wt%, more preferably 20 to 30 wt%. If the content of the photopolymerizable monomer exceeds 40 wt%, due to high degree of curing pattern detachment during developing and pattern straightness become worsen. On the other hand, if it is less than 10 wt%, due to low sensitivity and low degree of curing normal pattern formation becomes difficult and pattern straightness is deteriorated.
  • micro bubbles may be generated during mixing the Ag powders with other components.
  • the micro bubbles present in a thick film due to high viscosity are transformed into pin-holes during sintering thereby causing electrode disconnection.
  • the anti-foaming agent of the negative photoresist composition serves to prevent such electrode disconnection.
  • the leveling agent serves to mitigate the reduction of miscibility between the Ag powders and the photoresist composition due to the surface tension of the photoresist composition, and to reduce problems that may be caused by lack of film uniformity.
  • each of the anti-foaming agent and the leveling agent is used in an amount of 0.1 to 10 wt%. Using of more than 10 wt% of the anti-foaming agent and the leveling agent may leave a residual film during developing. If the content of the anti-foaming agent and the leveling agent is less than 0.1 wt%, desired characteristics are not easily obtained.
  • the Ag paste composition of the present invention is prepared by pre -mixing the
  • the Ag paste composition thus prepared has a viscosity of 3,000 to 60,000 cP and exhibits a pseudoplastic behavior. These characteristics enable the use of the Ag paste composition as the composition for microelectrode formation, which requires low resistance against stress during printing enhanced printing characteristics in spite of high viscosity, and high smoothness after printing.
  • a microelectrode formed using the Ag paste composition is provided.
  • the microelectrode is formed by a micro pattern formation step and a sintering step.
  • the Ag paste composition as prepared above is printed on the surface of a substrate using a screen printer that uses a screen mask such as SUS 325 mesh and SUS 400 mesh.
  • the coated specimens are dried in a convection oven at a temperature of 80 to 120 °C for 10 to 40 minutes.
  • the Ag paste coated film thus formed is exposed to a light source such as a mercury lamp with a complex wavelength of 365nm for pattern formation, followed by development using an appropriate alkaline developer such as Na CO solution, KOH, and TMA II at room
  • the above -formed micro pattern is sintered in an electric furnace at 500 to 600 °C for 10 to 60 minutes.
  • the micro pattern is maintained at a temperature of about 300 to 400 °C for 10 to 60 minutes.
  • an organic material of the photoresist composition is present in the form of carbonate, thereby incompletely sintering the Ag powders.
  • an electric resistance is increased after sintering or the micro pattern becomes dielectric. Rirthermore, micro crack may be generated in the micro pattern after sintering.
  • the acrylate copolymers of Ibrmula 1 were prepared through polymerization according to the compositions and contents presented in Table 1 below.
  • a solvent used for the polymerization 50 wt% of gammabutyrolactone (GBL) was used in Examples 1 through 3, and 50 wt% of dipropyleneglycolmonoethylether (DPGME) was used in Example 4.
  • GBL gammabutyrolactone
  • DPGME dipropyleneglycolmonoethylether
  • Example 10 Preparation of Ag paste composition [95] 65 wt% of Ag powders, 3 wt% of an inorganic binder, 0.05 wt% of a stabilizer, and 31.95 wt% of a negative photoresist composition that disperses conductive micro- powders and is soluble in an alkaline were mixed, pre-mixed using a planetary mixer, and uniformly dispersed using 3-roll mill to give a Ag paste composition. [96] Examples 11 through 14 [97] Evaluation of characteristics of Ag paste compositions according to the content of Ag powders
  • the average particle size of the Ag powders used was 1.2 /an Lead borosilicate frit was used as the inorganic binder and phosphorous acid was used as the stabilizer.
  • the photoresist composition included 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
  • Ag paste compositions were prepared in the same manner as in Example 10 except that the contents of the Ag powders were as defined in Examples 11 through 14 of Table 3. According to evaluation results of characteristics of the Ag paste compositions depending on the content of the Ag powders, the Ag paste compositions exhibited good developing property and pseudoplastic viscosity property. Also, printing property and pattern thickness after sintering were good.
  • the average particle size of the Ag powders used was 1.2 /an Lead borosilicate frit was used as the inorganic binder and phosphorous acid was used as the stabilizer.
  • the photoresist composition included 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
  • the average particle size of the Ag powders used was 1.2 /an Lead borosilicate frit was used as the inorganic binder and the antioxidants listed in Table 5 above were used as stabilizers.
  • the photoresist composition included 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
  • the average particle size of the Ag powders used was 1.2 /an Lead borosilicate frit was used as the inorganic binder and phosphorous acid was used as the stabilizer.
  • the photoresist composition included 68% of an acrylic copolymer, 28.1% of a photopolymerizable monomer, 2% of a photopolymerization initiator, and 1.9% of other additives.
  • the Ag paste compositions of the present invention exhibited good developing property and pattern formation regardless of differences in the amount of exposure to light.
  • Example 27 [121] R)rmation of microelectrodes [122]
  • the Ag paste compositions according to above Examples were printed on the surface of a glass substrate using a screen printer with a SUS 325 mesh screen mask. The printed specimens were dried in a convection oven at 90 °C for 20 minutes. The Ag paste coated films thus formed were exposed to light emitted from exposure equipment provided with a mercury lamp so that pattern formation occurred at 365 nm wavelength, and developed using a NaCO developer at 30 °C. The developed micro
  • An Ag paste composition for microelectrode formation according to the present invention can be applied in a sintering process of less than 600 °C and thus is suitable for PDP fabrication. Also, because of high viscosity, the Ag paste composition is suitable for formation of precise microelectrodes that cannot be formed by conventional screen printing technology, and has good printing property. In addition, because a surfactant and an organic solvent are not separately used, the Ag paste composition can be prepared simply and economically, and is environmental friendly.

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  • Spectroscopy & Molecular Physics (AREA)
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Abstract

L'invention concerne une composition de pâte Ag haute viscosité et une micro-électrode formée au moyen de la composition de pâte Ag. Cette composition de pâte Ag comprend a) 60 à 80 % en poids de poudres Ag, b) 1 à 10 % en poids d'un liant inorganique, c) 0,001 à 1 % en poids d'un stabilisateur, et d) 15 à 35 % en poids d'une composition de photorésine négative qui disperse les micro-poudres conductrices et qui est soluble dans un alcali. La composition de pâte Ag peut être appliquée dans un processus de frittage en dessous de 600 °C et convient de ce fait à la fabrication de PDP. En raison de sa viscosité élevée la composition de pâte Ag convient pour former des microélectrodes et possède une bonne propriété d'impression. En outre, grâce à l'utilisation non séparée d'un surfactant et d'un solvant organique, la composition de pâte Ag peut être produite par un procédé simple et économique; en outre, elle n'est pas dangereuse pour l'environnement.
PCT/KR2004/000258 2003-02-11 2004-02-10 Composition de colle a base de ag destinee a la formation de micro-electrodes et micro-electrode formee au moyen de cette composition WO2004072736A1 (fr)

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KR1020030008451A KR100581971B1 (ko) 2003-02-11 2003-02-11 미세 전극 형성용 고점도 Ａｇ 페이스트 조성물 및 이를이용하여 제조된 미세 전극
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WO2008008521A2 (fr) * 2006-07-13 2008-01-17 E. I. Du Pont De Nemours And Company Pâte conductrice photosensible pour la formation d'électrodes et électrode
CN100435366C (zh) * 2006-06-08 2008-11-19 天津大学 以纳米银焊膏低温烧结封装连接大功率led的方法
US20120234383A1 (en) * 2011-03-15 2012-09-20 E.I.Du Pont De Nemours And Company Conductive metal paste for a metal-wrap-through silicon solar cell
US20120234384A1 (en) * 2011-03-15 2012-09-20 E.I. Du Pont Nemours And Company Conductive metal paste for a metal-wrap-through silicon solar cell

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JP4640971B2 (ja) * 2005-09-08 2011-03-02 東京応化工業株式会社 プラズマディスプレイの遮光性パターン形成用感光性樹脂組成物
KR100871075B1 (ko) * 2006-04-18 2008-11-28 주식회사 동진쎄미켐 인쇄용 페이스트 조성물
KR101280489B1 (ko) * 2007-05-09 2013-07-01 주식회사 동진쎄미켐 태양전지 전극 형성용 페이스트
KR100978736B1 (ko) * 2008-05-01 2010-08-30 주식회사 엘 앤 에프 Ｐｄｐ 전극용 도전성 페이스트 조성물 및 이의 제조방법
JP6646643B2 (ja) * 2017-12-14 2020-02-14 株式会社ノリタケカンパニーリミテド 感光性組成物とその利用

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