WO2004043648A1 - Appareil de polissage - Google Patents

Appareil de polissage Download PDF

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Publication number
WO2004043648A1
WO2004043648A1 PCT/JP2003/013628 JP0313628W WO2004043648A1 WO 2004043648 A1 WO2004043648 A1 WO 2004043648A1 JP 0313628 W JP0313628 W JP 0313628W WO 2004043648 A1 WO2004043648 A1 WO 2004043648A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polished
elastic sheet
fluid
holding mechanism
Prior art date
Application number
PCT/JP2003/013628
Other languages
English (en)
Japanese (ja)
Inventor
Masayoshi Hirose
Hozumi Yasuda
Kazuto Hirokawa
Ikutaro Noji
Original Assignee
Ebara Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corporation filed Critical Ebara Corporation
Priority to AU2003275653A priority Critical patent/AU2003275653A1/en
Priority to US10/534,507 priority patent/US20070004324A1/en
Publication of WO2004043648A1 publication Critical patent/WO2004043648A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
    • B24D9/08—Circular back-plates for carrying flexible material
    • B24D9/085—Devices for mounting sheets on a backing plate

Definitions

  • the present invention relates to a chemical mechanical polishing (CMP) apparatus used for flattening a substrate to be polished, particularly a substrate such as a semiconductor wafer, and forming wiring.
  • CMP chemical mechanical polishing
  • CM field P chemical mechanical polishing
  • a pad having high hardness has a small deformation itself, pressure is concentrated on the convex portion of the substrate to be polished. For this reason, it has a high ability to flatten steps such as patterns existing in semiconductor wafers, etc., but on the other hand, it is also susceptible to large undulations and warpages that exist over the entire surface of the semiconductor wafer, and variations in thickness. This adversely affects the uniformity of the polishing rate within the semiconductor wafer surface.
  • a pad with low hardness has a large amount of deformation and is easy to follow the shape of the object to be polished, so it is not easily affected by large undulations and warpages in the wafer surface, variations in thickness, and the like. Performance is relatively easy to obtain, but the ability to flatten steps such as patterns is low.
  • a two-layer pad is used for the polishing pad, a relatively hard pad on the surface of the two-layer pad, and a low hardness on the lower layer.
  • the uniformity of the polishing rate within the semiconductor wafer surface changes, so it is necessary to use a material that minimizes the variation in the elasticity of the lower layer pad. In such a case, each time the pad is replaced, a variation factor such as an individual difference of the lower layer pad is generated.
  • a polishing apparatus comprising: a polishing object holding mechanism for holding a polishing object; and a table having a polishing surface.
  • the object to be polished held by the object is pressed against the polishing surface of the table, and the object to be polished is polished by the relative movement between the object to be polished held by the object to be polished and the polishing surface of the table.
  • An elastic sheet is stretched, and a polishing pad having a polishing surface on an upper surface is replaceably stretched on the elastic sheet.
  • the elastic sheet preferably has a plurality of protrusions on the surface.
  • an elastic sheet (preferably, an elastic sheet having a plurality of projections) is provided on the upper surface of the table, and a polishing pad having a polishing surface on the upper surface can be replaced on the elastic sheet. Since the elastic sheet has the function performed by the lower layer pad of the conventional two-layer pad, when the polishing ability of the polishing pad is reduced, only the polishing pad can be replaced. Thus, the polishing apparatus can reduce the cost of the polishing process and stabilize the process performance such as the uniformity of the polishing rate in the object to be polished.
  • a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism.
  • a polishing apparatus for pressing an object against a polishing surface of a table and polishing the object by relative movement between the object to be polished held by the object to be polished holding mechanism and the polishing surface of the table a concave portion is formed on the upper surface of the table.
  • a fluid chamber is formed by covering the opening of the concave portion with an elastic sheet, and the fluid chamber is filled with a fluid of a predetermined pressure, and a polishing pad having a polishing surface on the upper surface of the elastic sheet can be replaced. It is characterized by being stretched over.
  • a concave portion is provided on the upper surface of the table, an opening of the concave portion is covered with an elastic sheet to form a fluid chamber, and the fluid chamber is filled with a fluid at a predetermined pressure.
  • the replacement of a polishing pad with a polishing surface on the upper surface allows the elastic sheet to have the function of the lower pad of the conventional two-layer pad, and the polishing capability of the polishing pad has declined. In this case, it is possible to replace only the polishing pad, thereby reducing the cost of the polishing process and stabilizing the process performance such as the uniformity of the polishing rate in the object to be polished.
  • a fluid supply unit for supplying a fluid to the fluid chamber is provided, and the elastic sheet is provided with a fluid supplied from the fluid supply unit. Characterized in that it can be deformed according to the supply pressure.
  • the fluid supply unit includes the flow path for supplying the fluid and the fluid source
  • the fluid source includes the control unit that controls the supply pressure of the fluid, so that the pressure of the fluid chamber can be arbitrarily adjusted. Since the amount of deformation of the elastic sheet can be arbitrarily adjusted, the polishing apparatus can perform polishing suitable for the characteristics of the object to be polished.
  • the table further comprises: a plurality of pistons between the elastic sheet and the polishing pad; A piston guide plate for restricting the direction, wherein the piston is guided by the piston guide plate so as to move in a direction perpendicular to the polishing surface of the polishing pad following the deformation of the elastic sheet. I do.
  • a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism. Is pressed against the polished surface of the table, and the relative movement between the polished object held by the polished object holding mechanism and the polished surface of the table causes the polishing apparatus to polish the polished object.
  • An elastic sheet having a plurality of concave portions is stretched so as to enclose a fluid therebetween, and a polishing pad having a polishing surface on an upper surface is replaceably stretched on the elastic sheet.
  • the elastic sheet having a plurality of concave portions is stretched on the upper surface of the table so as to seal the fluid between the upper surface of the table and the polishing pad having the polishing surface on the upper surface is replaced on the elastic sheet.
  • the polishing pad is stretched as possible, the function of the lower pad of the conventional two-layer pad is performed by the elastic sheet having a plurality of recesses filled with fluid, and the polishing ability of the polishing pad is reduced. This makes it possible to replace only the polishing pad, thereby providing a polishing apparatus capable of reducing the cost of the polishing process and stabilizing the process performance such as the uniformity of the polishing rate in the object to be polished.
  • a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism.
  • a polishing apparatus for pressing the object against the polishing surface of the table, and polishing the object to be polished by a relative movement between the object to be polished held by the object to be polished holding mechanism and the polishing surface of the table;
  • An elastic sheet is stretched on the upper surface of the belt, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet.
  • the table comprises a belt suspended between pulleys, An elastic sheet is stretched on the upper surface, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet.
  • a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet.
  • FIG. 1 is a side sectional view showing a configuration example of a table section of a chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 2 is a side sectional view showing another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • Fig. 3 is an enlarged view of the part A in Fig. 2
  • Figs. 3 (a) and (b) are enlarged views of the part A
  • Fig. 3 (c) is a sectional view of Fig. 3 (a) and (b). It is B sectional drawing.
  • FIG. 4 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 5 is a side sectional view showing another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 6 is a sectional side view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 7 is a sectional view taken along line AA of FIG.
  • FIG. 8 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 10 is a side sectional view showing still another example of the configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 1 is a side sectional view showing a configuration of a table section of a chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • the elastic sheet 11 A is a flexible sheet that deforms in response to pressure, such as a nonwoven fabric or a porous resin sheet.
  • the fixing method is such that the outer edge of the turntable 10 is fixed via a ring-shaped pressing member 12.
  • a plurality of ports 13 are used for fixing, and the central portion is fixed using ports 15 via a disc-shaped pressing member 14.
  • the method of fixing the elastic sheet 11A to the surface of the rotary table 10 can be performed by attaching the elastic sheet 11A to the surface of the rotary table 10 using a double-sided tape or an adhesive.
  • the double-sided tape or adhesive, the ring-shaped pressing member 12 and the plurality of ports 13, and the disc-shaped pressing member 14 and the port 15 may be used in combination.
  • the elastic sheet 11A has sufficient smoothness on the upper surface so that the polishing pad 16 can be detachably adhered with a double-sided tape.
  • the polishing pad 16 is basically a relatively hard single-layer polishing pad (for example, a foamed polyurethane pad, etc.) having an excellent ability to eliminate a step on the polished surface, and using a double-sided tape or It is removably attached to the elastic sheet 11A surface using an adhesive.
  • the polishing pad 16 is not limited to a single-layer pad, but may be a two-layer polishing pad.
  • the turntable 10 can be rotated in a predetermined direction by a motor 17. Except for the ring-shaped pressing member 12 and the disc-shaped pressing member 14 of the polishing pad 16, the band-shaped portion on the upper surface of the polishing pad is a polishing area 18, and the polishing pad 1 of the polishing area 18 is provided.
  • the substrate to be polished held by the substrate holding mechanism (not shown) is pressed against the polishing surface on the upper surface of 6, and the polishing pad 16 and the substrate to be polished by the rotation of the turntable 10 and the rotation of the substrate holding mechanism (top ring, etc.) Is polished by the relative motion of.
  • the polishing liquid is supplied to the surface of the polishing pad 16.
  • polishing pad 16 that compensates for the weakness of polishing pad 16 and elastic sheet 11 A with low hardness, and has the ability to flatten the steps of patterns etc. while following the undulation, warpage, and thickness variations of the entire substrate to be polished. Can be realized. Particularly, it is suitable for flattening and wiring of a substrate such as a semiconductor wafer.
  • FIGS. 2 and 3 are views showing another configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • FIG. 2 is a side sectional view
  • FIGS. 3 (a) and 3 (b) are views of FIG. Fig. 3 (c) is an enlarged view of the portion A
  • Fig. 3 (c) is a cross-sectional view taken along line BB of Figs. 3 (a) and (b).
  • portions denoted by the same reference numerals as those in FIG. 1 indicate the same portions.
  • a rubber sheet provided with a large number of projections (here, columnar projections) 11a on the surface is used as the elastic sheet 11B.
  • the protrusions 11 a of the elastic sheet 11 B may face the polishing pad 16 as shown in FIG. 3 (a), or the rotating table 10 as shown in FIG. 3 (b). You may turn to the side.
  • a space is created between the elastic sheet 11B and the polishing pad 16 or the rotating tape 10 and the clearance space, that is, the local pressurization around the periphery. Since the space is easily deformed by the elastic projections to disperse the pads, the pads can be deformed more easily.
  • the hardness of the rubber sheet of the lower layer can be compared with the hardness of the polishing pad 16 of the surface layer.
  • the polishing pad 16 and the elastic sheet 11B are compensated for in the same way as above, and the unevenness of the pattern etc. is flattened while following the undulation and warpage of the substrate to be polished and variations in thickness. Polishing that does not lose the ability to perform polishing.
  • the polishing pad 16 is detachably attached to the surface of the elastic sheet 11 B with a double-sided tape or an adhesive, and when the polishing capability of the polishing pad 16 is reduced, the polishing pad 16 is removed. Replace only.
  • FIG. 4 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • CMP chemical mechanical polishing
  • the rotary table 10 is provided with the concave portion 20a, and the four opening portions are covered with the sheet layer 19 to form the fluid chamber 20, so that the amount of deformation with respect to pressure can be reduced by the surface polishing pad.
  • the lower sheet layer 19 is larger than 16, the weaknesses of the polishing pad 16 and the sheet layer 19 are compensated for in the same way as above, and the undulation, warpage and thickness variation of the polished substrate metal surface are reduced. Can achieve polishing without losing the ability to flatten steps such as patterns while copying.
  • it is suitable for flattening a substrate such as a semiconductor wafer and forming wiring.
  • the polishing pad 16 is detachably attached to the surface of the sheet layer 19 with a double-sided tape or an adhesive, and when the polishing capability of the polishing pad 16 is reduced, the polishing node 1 is removed.
  • FIG. 5 is a sectional side view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • the difference between the present chemical mechanical polishing (CMP) equipment and the chemical mechanical polishing (CMP) equipment shown in Fig. 4 is that the flow path 21 for supplying pressure fluid to the fluid chamber 20 is connected and the fluid chamber 2 is connected. The point is that 0 is the pressure chamber.
  • the flow path 21 passes through the center of the motor 17 and is connected to a pressure fluid source 23 via a rotary joint 22. By controlling the pressure at which the fluid is supplied from the pressure fluid source 23, the pressure in the fluid chamber 20, that is, the pressure chamber 1 can be adjusted.
  • the flow path 21 for supplying the pressurized fluid is connected to the fluid chamber 20 of the rotary table 10, and the fluid chamber 20 is used as the pressurized chamber, whereby the deformation of the sheet layer 19 with respect to the pressure is performed. Since the amount can be adjusted, it is possible to realize polishing without losing the ability to flatten a step of a pattern or the like, while following the undulation or warpage of the substrate to be polished or the variation in thickness. As in the case of FIG. 4, it is particularly suitable for flattening a substrate such as a semiconductor wafer and forming wiring.
  • the polishing pad 16 is detachably attached to the surface of the sheet layer 19 with a double-sided tape or an adhesive, and if the polishing ability of the polishing pad 16 decreases, only the polishing pad 16 is attached. Replace.
  • FIG. 6 and 7 are views showing another example of the configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • FIG. 6 is a side sectional view
  • FIG. 7 is a sectional view taken along line AA of FIG. is there.
  • the difference between this chemical mechanical polishing (CMP) device and the chemical mechanical polishing (CMP) device shown in Fig. 5 is that a fluid chamber 20 (pressurized) is provided between the sheet layer 19 and the polishing pad 16.
  • Chiyamba By pressing the sheet layer 19 in 1), a large number of pistons 24 which are pressed by the sheet layer 19 and move up and down are provided.
  • the piston 24 is guided vertically by a piston stroke P S by a piston guide plate 25.
  • the sheet layer 19 is fixed to the upper end surface of the rotary table 10 with a plurality of ports 27 via a ring-shaped holding member 26, and the piston guide plate 25 is mounted on the upper surface of the ring-shaped holding member 26. Porto 28 fixed.
  • the polishing pad 16 is detachably attached to the surface of the piston 24 and the piston guide plate 25 with a double-sided tape, an adhesive, or the like. Replace only.
  • FIG. 8 and 9 are views showing still another configuration example of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • FIG. 8 is a side sectional view
  • FIG. FIGS. 9 (b) and 9 (c) are enlarged cross-sectional views taken along the line BB of FIG. 9 (a).
  • a rubber sheet having a large number of concave portions (here, circular or pentagonal) 11b provided on the surface of an elastic sheet 11C is used.
  • the opening of the concave portion 11b of the elastic sheet 11C is bonded to the upper end surface of the turntable 10 with an adhesive. Fluids are sealed in the recesses 1 1b respectively.
  • polishing that does not lose the ability to flatten steps such as patterns while following variations in thickness can be realized. Particularly, it is suitable for flattening a substrate such as a semiconductor wafer and forming wiring. Also in this case, the polishing pad 16 1 Removably attach to the surface of c with a double-sided tape or adhesive, etc. If the polishing ability of the polishing pad 16 decreases, replace only the polishing pad 16.
  • FIG. 10 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.
  • the table is composed of a belt 31 suspended on pulleys 29, 30.
  • An elastic sheet 11D is attached on the upper surface of the belt 31 and further, on the upper surface of the elastic sheet 11D.
  • the polishing pad 16 is detachably attached with a double-sided tape or an adhesive.
  • As the elastic sheet 11D one having the same structure as that shown in FIGS. 3 and 9 can be used.
  • the pulley 29 rotates in the direction of the arrow C in a mode not shown, and the belt 31 moves in the direction of the arrow D.
  • the substrate to be polished W held by the substrate to be polished holding mechanism (top ring, etc.) 32 is placed on the polishing pad 16 which is adhered to the upper surface of the belt 31 via the elastic sheet 11 D as described above.
  • the substrate to be polished W is polished by pressing and rotating the substrate to be polished holding mechanism 32 in the direction of arrow D. Also in this case, if the polishing ability of the polishing pad 16 is reduced, only the polishing pad 16 is replaced. As described above, the same operation and effect can be obtained even if the table part of the chemical mechanical polishing (CMP) apparatus is of a belt type (linear type).
  • CMP chemical mechanical polishing
  • the elastic sheet 11 (11A to 11D) that is deformed by pressure is applied to the lower layer member.
  • the sheet layer 19 displaced by the pressing force of the fluid chamber 20 (pressurizing chamber 1) or the sheet layer 19 and the piston 2 Table 4 shows the function of the lower layer pad of the two-layer polishing pad used in conventional chemical mechanical polishing (CMP) equipment, and if the polishing capability of the polishing pad 16 is reduced, Since only the polishing pad 16 is replaced, the cost of the chemical mechanical polishing (CMP) process can be reduced, and the process performance such as the uniformity of the polishing rate in the surface of the substrate to be polished can be stabilized.
  • CMP chemical mechanical polishing
  • the present invention is not limited to the above-described embodiment.
  • the present invention includes a lower layer member that is deformed in response to pressure provided on the table upper surface or a polishing pad attached to a lower layer mechanism, and the polishing pad is a lower layer member.
  • the polishing pad is a lower layer member.
  • CMP chemical mechanical polishing
  • the table may have the function performed by the pad, and the polishing pad may be replaced if the polishing ability of the polishing pad is reduced.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un appareil de polissage qui comprend un mécanisme de retenue d'objet à polir et une table dotée d'une surface de polissage. L'objet à polir retenu par ledit mécanisme est comprimé contre la surface de polissage de la table, et il est poli par son mouvement relatif par rapport à ladite surface de polissage. En outre, une feuille de corps élastique (11) est étirée sur la surface supérieure de la table et un tampon de polissage (16) doté d'une surface de polissage sur la surface supérieure correspondante est étiré sur la feuille du corps élastique (11) pour fournir à la table une fonction remplie par le tampon inférieur d'un tampon de polissage à double couches utilisé dans un appareil de polissage de machine chimique. Le coût d'un processus de polissage de machine chimique peut être abaissé et une caractéristique du processus, telle que l'uniformité de la vitesse de polissage sur la surface d'un substrat poli, peut être stabilisée.
PCT/JP2003/013628 2002-11-11 2003-10-24 Appareil de polissage WO2004043648A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003275653A AU2003275653A1 (en) 2002-11-11 2003-10-24 Polishing apparatus
US10/534,507 US20070004324A1 (en) 2002-11-11 2003-10-24 Polishing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-327416 2002-11-11
JP2002327416A JP2004160573A (ja) 2002-11-11 2002-11-11 研磨装置

Publications (1)

Publication Number Publication Date
WO2004043648A1 true WO2004043648A1 (fr) 2004-05-27

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ID=32310518

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/013628 WO2004043648A1 (fr) 2002-11-11 2003-10-24 Appareil de polissage

Country Status (5)

Country Link
US (1) US20070004324A1 (fr)
JP (1) JP2004160573A (fr)
AU (1) AU2003275653A1 (fr)
TW (1) TW200414966A (fr)
WO (1) WO2004043648A1 (fr)

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US20230364734A1 (en) * 2019-08-23 2023-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Novel CMP Pad Design and Method of Using the Same

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WO2009140622A2 (fr) * 2008-05-15 2009-11-19 3M Innovative Properties Company Tampon de polissage muni d'une fenêtre de point final et systèmes et procédés faisant appel audit tampon
CN102131618A (zh) 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
KR20120125612A (ko) 2009-12-30 2012-11-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 상-분리 중합체 블렌드를 포함하는 폴리싱 패드 및 이의 제조 및 사용 방법
CN102884612B (zh) * 2011-01-03 2017-02-15 应用材料公司 压力控制的抛光压板
CN102990535A (zh) * 2012-11-27 2013-03-27 无锡市彩云机械设备有限公司 一种抛光垫
KR102427159B1 (ko) * 2015-11-11 2022-08-01 삼성전자주식회사 테이프 필름의 라미네이션 장치 및 그를 포함하는 반도체 소자의 제조 설비
JP6883475B2 (ja) 2017-06-06 2021-06-09 株式会社荏原製作所 研磨テーブル及びこれを備える研磨装置
KR101987949B1 (ko) * 2017-10-16 2019-06-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN115805523A (zh) * 2022-12-29 2023-03-17 西安奕斯伟材料科技有限公司 定盘、抛光设备和抛光方法

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US20230364734A1 (en) * 2019-08-23 2023-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Novel CMP Pad Design and Method of Using the Same

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