200414966 玖、發明說明 [發明所屬之技術領域] 本發明係關於被研磨基板，特別係關於使用於半導體 晶圓等基板的平坦化以及配線形成等時之化學機械研磨 (CMP)裝置。 [先前技術] 以往，貼在此種化學機械研磨（CMP)裝置之研磨平台 表面之研磨件大多使用雙層研磨墊（p〇lishing pad)(可參考 例如·日本專利特開平6-2 1 028號公報）。使用雙層研磨墊 之原因係基於研磨墊需同時具備兩種性能：一是可將存在 於半V體晶圓内的圖案之階差予以平坦化之能力，以及於 半導體晶圓面内具有均勻之研磨速度。 由於高硬度的研磨墊本身的變形量較少，故壓力會集 中在被研磨基板的凸部。因此對存在於半導體晶圓内的圖 案卩白差之平坦化效果較高，但反之，使用高硬度研磨墊時 部易又到存在於半導體晶圓全面之大幅度的彎曲、翹曲以 及厚度不均等的影響，&問題將對半導體晶圓面中的研磨 速度的均勻性造成不良之影響。 另-方面，低硬度研磨墊之變形量較大，容易隨被研 老物的形狀而㈣’因此不易受到晶圓面内的大彎曲、翹 曲以及厚度不均等的影響，而較易於晶圓面内獲得均句： 研磨速度，但對圖案等階差的平垣化效果卻較低。 雙：•繼研磨塾硬度高低所造成之問i乃使用 研磨塾之組合式研磨塾，雙層研磨墊的表層係使用硬 315211 5 度較高的研磨塾，而硬度較低的研磨塾則使用於下層，以 上达方式，使上述各研磨塾得以互補雙方的缺點，而能於 研砮衣中’ g无可隨整個半導體晶圓面之彎曲、翹曲或厚 度不均等狀態而變形’亦可將圖案等之階差研磨出較佳之 平坦度。 白1知之化學機械研磨（CMP)裝置中所使用的雙層研磨 墊，係以貼合兩種研磨墊的狀態提供使用者來使用，與單 層㈣磨墊相較其價格較高，且在更換消耗性元件之研磨 塾4，因不單只是換下實際具有研磨作用的表層研磨塾， 連下層的研磨墊也必須同時更換，此舉亦是導致化學機械 研磨（CMP)製程成本上升的原因之一。 、此外，使用於下層之研磨墊的彈性產生變化時，會使 得半導體晶圓面内之研磨速度均勻性亦隨之產生變化，因 此，必須使用儘量減少下層研磨墊彈性不均勾之研磨墊。 當使用兩層式研磨墊時，每次更換研磨墊即產生下層研磨 墊個別特性之差異等因素而產生不同之效果。 [發明内容] 本發明係鑒於上述問題而研發者，其目的在·提供一 種研磨裝置，可使化學機械研磨（CMp)裝置的研磨平台具 備有化學機械研磨（CMP)裝置所使用之雙層研磨墊的下層 研磨墊的功旎，使製程之效能穩定，可達到降低化學機械 研磨（CMP)製程成本，以及被研磨基板面内之研磨速度均 勻等目的。尤其是，本發明之目的在於提供一種能使半導 體晶圓的絕緣膜、半導體晶圓等基板達到全面平坦化，而200414966 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a substrate to be polished, and in particular, to a chemical mechanical polishing (CMP) apparatus used for planarization of a substrate such as a semiconductor wafer and wiring formation. [Prior art] In the past, most polishing parts attached to the surface of the polishing platform of such a chemical mechanical polishing (CMP) device used a double-layer polishing pad (see, for example, Japanese Patent Laid-Open No. 6-2 1 028). Bulletin). The reason for using a double-layer polishing pad is based on the fact that the polishing pad needs to have two properties at the same time: one is the ability to flatten the step difference of the pattern existing in the half-V wafer, and it is uniform on the surface of the semiconductor wafer. Grinding speed. Since the high-hardness polishing pad has less deformation, the pressure is concentrated on the convex portion of the substrate to be polished. Therefore, the flattening effect of the pattern and white difference existing in the semiconductor wafer is high, but on the contrary, when using a high-hardness polishing pad, the part is easy to be bent, warped and the thickness of the semiconductor wafer is not large. Equal impact, & problems will adversely affect the uniformity of the polishing rate in the semiconductor wafer surface. On the other hand, the deformation of the low-hardness polishing pad is large, and it is easy to change with the shape of the object to be studied. Therefore, it is not easy to be affected by large bending, warpage and uneven thickness in the wafer surface, and it is easier to wafer. The average sentence is obtained in the plane: The grinding speed is low, but the effect of leveling the pattern is low. Double: • The problem caused by the hardness of the subsequent grinding 塾 is a combined grinding 使用 using grinding 塾. The surface layer of the double-layer polishing pad is a hard 315211 5 degree high grinding 塾, while the lower hardness grinding 塾 is used. In the lower layer, the above methods make the above grinding pads complement each other's shortcomings, and in the research clothes, 'g can be deformed without bending, warping or uneven thickness of the entire semiconductor wafer surface'. Steps such as patterns are polished to obtain better flatness. The double-layer polishing pads used in the CMP equipment of Bai 1 Zhizhi are provided to users in a state that fits two types of polishing pads. Compared with single-layer honing pads, the price is higher, and Replacing the grinding 元件 4 of the consumable components, because not only the surface grinding 实际 which actually has the polishing effect, but also the lower polishing pads must be replaced at the same time. This is also the reason for the increase in the cost of the chemical mechanical polishing (CMP) process. One. In addition, when the elasticity of the polishing pad used in the lower layer changes, the uniformity of the polishing speed in the surface of the semiconductor wafer will change accordingly. Therefore, it is necessary to use a polishing pad that minimizes the uneven unevenness of the polishing pad in the lower layer. When a two-layer polishing pad is used, each time the polishing pad is replaced, a difference in the individual characteristics of the lower polishing pad and other factors will produce different effects. [Summary of the Invention] The present invention was developed in view of the above-mentioned problems, and an object thereof is to provide a polishing device capable of equipping a polishing platform of a chemical mechanical polishing (CMp) device with a double-layer polishing used by a chemical mechanical polishing (CMP) device The function of the polishing pad under the pad stabilizes the performance of the process, can reduce the cost of the chemical mechanical polishing (CMP) process, and achieve uniform polishing speeds within the surface of the substrate being polished. In particular, an object of the present invention is to provide a substrate that can completely planarize an insulating film of a semiconductor wafer, a semiconductor wafer, and the like, and
3152M 6 200414966 提升配線密度以及形成接觸孔之情況下使用之研磨裝置。 為解決上述課題，本發明第一態樣之研磨裝置係且 備：保持被研磨物之被研磨物保持機構；以及具有研磨面 之研磨平台，而將被研磨物保持機構所保持的被研磨物按 壓於研磨平台的研磨面上，利用被研磨物保持機構所保持 的被研磨物與研磨平台的研磨面之間的相對運動，研磨嗲 被研磨物，其中，係在研磨平台上面張設彈性體薄膜，並 以可更換之方式在該彈性體薄膜上張設上面具有研磨面之 研磨墊。 上述彈性體薄膜以表面具有數個突起部之薄膜較佳。 如上所述，在研磨平台上面張設彈性體薄膜（最好是具 有數個突起部的彈性體薄膜），並在該彈性體薄膜上張設; 更換之具有研磨面的研磨墊’如&，彈性體薄膜即具：習 用雙層研磨墊的下層研磨势夕六处 白 研逛墊之功此，而使研磨裝置能於研 磨塾的研磨性能衰退日m更換該研㈣，即可八 ^能穩定’而達料低研磨製程的成本，並使被研=内王 的研磨速度均勻等目的。 :物ΠΓΓΓ的被研磨物按壓於研磨平台的研磨面 而2用破研磨物保持機構所保持之被研磨物與研磨平 :研念面之間的相對運動’研磨該被研磨物，其中，在 上述研磨平台上面設置 " 的開口部形成…無性體薄膜覆蓋該凹部 成U至，使該流體室内充滿力的流 315211 7 200414966 體，並在該彈性體薄膜上以可更換之方式張設具有研磨面 之研磨ί墊。 如上所述’在上述研磨平台上面設置凹部，利用彈性 體薄膜覆蓋該凹部的開口部而形成流體室，使該流體室内 充滿一定壓力的流體，並在該彈性體薄膜上以可更換之方 式張設具有研磨面之研磨塾’藉由上述方式，彈性體薄膜 即具有習用雙層研磨墊的下層研磨墊之功能，當研磨墊的 研磨性能衰退時，可更換該研磨塾，並可使製程之效能移 定，達到降低研磨製程的成本，使被研磨物内的研磨速度 均勻等目的。 & 本發明之第三態樣，係如第二態樣之研磨裝置，其中， 設置將流體提供予上述流體室之流體供給部，而上述彈性 體薄膜係因應上述流體供給部所供給流體的供給塵力 生變形。 邱，如上：述置將流體提供予上述流體室之流體供給 二弹性體溥膜’因應上述流體供給部所供給流體的 ==生變形，因此，研磨裝置可經由調整流體室 々……查力，以調整彈性體薄膜的 被研磨物的特性進行研磨。 i並且依各 本卷月之第四態樣，係如第三態樣的 體供給部係由供給流體之流路以及流體源所：：置而；； 源中係具備可控制流體供給壓力之控制部。 - 士上所述，研磨裝置之流體供給部係由 路以及流體源所細a，甘丄、士 、〆 ，、、、、ϋ抓組之极 、、 〃中體源中係具備可控制流體供 315211 8 200414966 給壓力之控制部，藉由該控制部即 1 1』仕思调整流體室内的 壓力，以及彈性體薄膜的變形量，因 ❿里因此即可配合各種被研 磨物之特性進行研磨。3152M 6 200414966 A polishing device used to increase wiring density and form contact holes. In order to solve the above-mentioned problems, the grinding device of the first aspect of the present invention includes: a grinding object holding mechanism for holding the grinding object; and a grinding platform having a polishing surface to hold the grinding object held by the grinding object holding mechanism. Press on the polishing surface of the polishing platform and use the relative motion between the object to be polished held by the object holding mechanism and the polishing surface of the polishing platform to grind the object to be polished. An elastic body is stretched on the polishing platform. A film, and a polishing pad having a polishing surface thereon is stretched on the elastomer film in a replaceable manner. The elastomer film is preferably a film having a plurality of protrusions on its surface. As described above, an elastomer film (preferably an elastomer film having a plurality of protrusions) is stretched on the polishing table, and the elastomer film is stretched on the polishing film; Elastomer film has the following advantages: the lower layer of the two-layer polishing pad can be used to study the performance of the white polishing pad, so that the polishing device can replace the polishing pad when the grinding performance of the polishing pad deteriorates. It can be stable and achieve the cost of the low grinding process, and make the grinding speed of the researched = internal king uniform. : The object to be polished is pressed against the polishing surface of the polishing platform, and 2 the object to be polished and the polishing surface held by the broken object holding mechanism are used to grind the object to be polished. The opening portion provided on the above grinding platform is formed by an asexual film covering the recess to U to make the fluid chamber full of force 315211 7 200414966, and stretched on the elastomer film in a replaceable manner. Abrasive pad with abrasive surface. As described above, a recess is provided on the above polishing platform, and an opening of the recess is covered with an elastomer film to form a fluid chamber. The fluid chamber is filled with a fluid having a certain pressure, and the elastomer film is stretched in a replaceable manner. It is assumed that the polishing pad having a polishing surface has the function of the lower polishing pad of a conventional double-layer polishing pad by the above method. When the polishing performance of the polishing pad deteriorates, the polishing pad can be replaced and the manufacturing process can be changed. The efficiency is shifted to achieve the purpose of reducing the cost of the grinding process and making the grinding speed in the object to be polished uniform. & The third aspect of the present invention is a grinding device as in the second aspect, wherein a fluid supply section for supplying fluid to the fluid chamber is provided, and the elastomer film is adapted to the fluid supplied by the fluid supply section. The dust supply deforms. Qiu, as above: The fluid supply two elastomer diaphragms that supply fluid to the fluid chamber are set to correspond to the deformation of the fluid supplied by the fluid supply unit. Therefore, the grinding device can adjust the fluid chamber by ... In order to adjust the characteristics of the object to be polished of the elastomer film, polishing is performed. i And according to the fourth aspect of each volume, the body supply unit of the third aspect is composed of a fluid supply path and a fluid source: and the source is equipped with a controllable fluid supply pressure. Control department. -As mentioned in the above, the fluid supply part of the grinding device is composed of the road and the fluid source. The Gansu, Shi, Jiu, ,,,, poles of the grabbing group, and the middle body source have controllable fluids. Supply 315211 8 200414966 to the pressure control unit, and use this control unit to adjust the pressure in the fluid chamber and the amount of deformation of the elastomer film. Because of this, it can be polished according to the characteristics of various objects to be ground. .
本發明之第五態樣，係如第四態樣之研磨裝置，上述 研磨平台係在彈性體薄膜與研磨墊之間更具備有：複數個 活基；以及可限制該活塞運動方向之活塞引導板其中， 該活塞經由活塞引導板的引導’可隨著彈性體薄膜的變 形，而在研磨墊的研磨面之垂直方向上運動。 如上所述’由於研磨平台，另於彈性體薄膜與研磨墊 之間2備有：複數個活塞；以及可限制該活塞的運動方向 之活塞引導板，因此可藉由調整流體室内的壓力，以調整 多個活塞的垂直方向移動量，使研磨裝置可配合被研磨物 之特性而進行研磨。The fifth aspect of the present invention is the grinding device as in the fourth aspect. The above-mentioned polishing platform is further provided between the elastomer film and the polishing pad: a plurality of living bases; and a piston guide capable of restricting the direction of movement of the piston. In the plate, the piston is guided by the piston guide plate to move in the vertical direction of the polishing surface of the polishing pad as the elastomer film is deformed. As described above, 'the polishing platform is provided between the elastomer film and the polishing pad2: a plurality of pistons; and a piston guide plate which can limit the direction of movement of the piston, so the pressure in the fluid chamber can be adjusted by The amount of vertical movement of a plurality of pistons is adjusted so that the grinding device can perform grinding in accordance with the characteristics of the object to be ground.
本發明第六態樣之研磨裝置係具備：保持被研磨物之 被研磨物保持機構；以及具有研磨面之研磨平台，並且將 被研磨物保持機構所保持的被研磨物按壓於研磨平台的研 磨面上，亚利用被研磨物保持機構所保持之被研磨物與研 磨平台的研磨面之間的相對運動，研磨該被研磨物，其中， 在上述研磨平台上面設置具有複數凹部之彈性體薄膜，使 流體付以该彈性體薄膜與封入該研磨平台上面之間，並以 可更換之方式在彈性體薄膜上張設上面具有研磨面之研磨 墊。 石 如上所述’由於在研磨平台的上面張設具有多數凹部 之彈丨生組薄膜，以將流體封入該彈性體薄膜台與研磨平台 315211 200414966 上之間的空心’並在該彈性體薄膜上以可更換之方式張 :具有：磨面之研磨墊，藉由上述結構，可使封入流體之 夕凹邛之彈性體薄膜得以具有習用雙層研磨墊之下層研 磨墊的功此，而得以在研磨墊的研磨性能衰退時，更換該 研：墊’而形成一種研磨裝置，可使製程之效能穩定，達 牛低研磨‘&成本，並使被研磨物内的研磨速度均勻等 目的。 、 本發明第七態樣之研磨裝置係具備有··保持被研磨物 之被研磨物保持機構；以及具有研磨面之研磨平台，並且 :被研磨物保持機構所保持的被研磨物按壓於研磨平台的 研磨面上，並利用被研磨物保持機構所保持之被研磨物與 平台的研磨面之間的相對運動，研磨該被研磨物的研 磨裝置中，前述研磨平台係由懸掛於滑輪間之輸送帶 所構成，在該輸送帶上面張設彈性體薄膜，並以可更換之 方式在前述彈性體薄膜上張設具有研磨面之研磨墊。 如上所述，由於研磨平台係由懸掛於滑輪間之輸送帶 所構成，並藉由在該輸送帶上面張設彈性體薄膜，並以可 更換之方式於前述彈性體薄膜上張設具有研磨面之研磨 墊，使彈性體薄膜得以具有習用雙層研磨墊之下層研磨墊 的功能，而得以在研磨墊的研磨性能衰退時，更換該研磨 墊，使研磨裝置之製程效能穩定，達到降低研磨製程成本， 並使被研磨物内的研磨速度均勻等目的。 本發明之上述目的及其他目的，可由所附圖式以及下 列實施例中獲得了解。 315211 10 [實施方式] 以下，根據圖示說明本發明研 第1圖為顯示本發明化學機村/置之理4貫施例。 平A部八Μ Μ # 栈械研磨（CMP)裝置的研磨 千口口P刀的構成例之側剖面圖。如 〇〇 11A固定於旋轉平台1〇的表 不’將弹性體薄膜 - U為下層構件，並將研磨 墊16黏貼在該彈性體薄膜11A的表面。 彈性體薄膜11A係一種由不钟；^ 〃 Μ ^ ^ ^ 、哉布或夕孔質樹脂薄膜等 成之材貝，係一種隨著壓力的大小而產生 潯膜。該彈性體薄膜的固定方法，係 " 將旋轉平纟10的外緣部以複數個 I查構件12 —丄 後数调螺栓13加以固定，同時 精由圓板狀的推壓構件14將中央部以螺栓15加以固定。 此外，有關將彈性體薄膜11A固定於旋轉平台μ表面之 :法’可使用雙面膠或黏合劑將彈性體薄膜uA黏貼在旋 平台10的表面上，或者，亦可在使用雙面夥或接著劑以 卜，併用上述環狀推㈣件12與複數個螺拴13以及圓板 狀推壓構件14與螺栓15，以固定彈性體薄膜uA。此外， 為了能夠輕易地取下研磨墊16，可利用雙面膠來黏點，因 此彈性體薄膜ΠΑ表面必須保持充分的平滑度。 研磨墊16，基本上係使用具有可消除研磨面階差之功 能而且硬度較高的單層研磨墊（例如：發泡聚胺基甲酸醋研 磨墊）。利用雙面膠或黏合劑以可輕易取下之方式使直黏貼 於彈性體薄膜11A表面。此外，研磨塾16並未侷限於單 層墊，亦可使用雙層研磨墊。 旋轉平台10可藉由馬達17向一定方向轉動。除了研 315211 11 200414966 磨墊16的環狀推壓構件12以及圓板狀推壓構件μ之外， 該研磨墊上面的圓帶狀部份構成研磨區域i 8，將未顯示於 圖中之由基板保持機構所保持之被研磨基板㈣在該研磨 區或8白勺研磨墊！ 6上面的研磨面之上，利用旋轉平台⑺ 的旋轉與基板保持機構(上環等)的轉動使研磨墊“和被研 磨基板產生相對運動，藉此進行被研磨基板的研磨。此外， 圖示中雖省略該部分，但研磨墊16面上有研磨液的供給。 士上所述，將硬度較高的研磨墊1 6作為表層研磨墊 16來使用，並將硬度較低的彈性體薄膜11A使用在下層， 使硬度較高的研磨墊16與硬度較低的彈性體薄膜"Α得 、互補又方的缺點，而能於研磨製程中，既可隨整個半導 體晶圓面之彎曲、翹曲或厚度不均等狀態而㈣，亦可將 ®案等之階差研磨出較佳之平坦度。因此，尤適於欲使半 V肢日日圓等基板達到全面平坦化而減少設計佈局限制，提 升配線始、度之情況下使用。此外，在研磨墊1 6的研磨性能 衰退後，可自彈性體薄膜丨丨A中取下研磨墊16，換貼新的 研磨塾1 6。 第2圖、第3圖為顯示本發明化學機械研磨（cMp)裝 置的研磨平台部分的其他構成圖，其中第2圖為側剖面 圖，第3圖（a)、第3圖（b)為第2圖的A部份之放大圖， 第3圖（c)為第3圖（a)、第3圖（…的b_b剖面圖。在第2 圖、第3圖中與第！圖標示相同符號之部分即表示相同之 刀另卜在其他圖示之標示亦同。在此係使用表面配設 有夕數犬起部（在此為圓柱狀的突起部）1丨a之橡膠薄膜作 315211 200414966 為彈性體薄膜11B。彈性辦蕰 第3圖⑷所示面朝研磨墊 朝向旋轉…側的方向。藉由配設== =性體薄膜與研磨塾16或是旋轉平台i : 間，此即所謂的迂迴空間，亦 玍二 ^ 马了使局部性加壓得以分 放至周圍，而讓彈性體突起容易產生變彤 ^ 述空間，使研磨墊之變形 ^、工θ ，猎由上 夂小j運到更佳之追隨性。 作為=戶二使用表面具有多數突起部1U的橡膠薄膜 =杨性體㈣UB，相較於表層的研磨墊Μ的硬度，由 與彈性體薄膜UB#以互補雔方的缺;1㈣使研磨塾16 補又方的缺點，而能於研磨製程 既可酼整個半導體晶圓面之彎曲、翹曲或厚度不均等 卜:而變形，'亦可將圖案等之階差研磨出較佳之平坦度。 日可’亦可利用雙面膠或黏合劑將研磨墊16以可自由取下 :方式貼附於彈性體薄m UB的表面，在研磨墊Μ的研 4性能衰退後，可換貼新的研磨墊16。 、，第4 顯示本發明化學機械研磨（cMp)裝置的研磨 :台部分的其他構成例的側剖面圖。㈣所示，在旋轉平 =二〇—的表面上以圓帶狀之方式設置凹部2〇a，利用彈性膜 ，薄薄的金屬4膜| 19覆蓋該凹部的開口部以形成流體 至2〇。之後再使一定壓力之氣體與液體充滿於流體室20 中。 “如上所述，在旋轉平台〗〇上設置凹部20a，並利用薄 暝層19覆蓋該凹部的開口部以形成流體室2〇，因此，相 13 31521] 200414966 較於表層的研磨墊1 6，屙力似 變形量較大，故與前述相同7層之薄膜㉟19所造成之 以互補雙方的缺點，而能於研：：磨塾16與薄膜層19得 磨基板面之彎曲、想曲或厚广程中’既可隨整個被研 圖案寺之階差研磨出較佳之平、7Γ 了將 導體晶圓等基板達到全面平* ，尤適於欲使半 升配線密度之情況下使用=了、設計佈局限制，提 ώ •，亦可利用雙面膠或黏合 的茅”由取下之方式貼附於彈性體薄膜11Β =面’在研磨，16的研磨性能衰退後，可換貼新的研磨 第5圖為顯示本發明化學機械研磨(CMP)裝置的工作 =刀的另外的構成例之側剖面圖。本化學機械研磨（⑽） 、與第4圖中之化學機械研磨（CMp)裝置的相異點係在 於：連接提供壓力流體予流體室2〇之流路21，並將产蝴 室π作為加壓處理室的部份。流路21係經由旋轉接頭= 通過馬達1 7的中心部連接於壓力流體源23。藉由控制壓 力流體源23所供給之流體壓力，即可調整流體室2〇，= 即加壓處理室的壓力。 如上所述，使提供加壓流體之流路21連接於旋轉平台 10之流體室20，並將流體室20作為加壓處理室，藉由上 述方式即可調整壓力對薄膜層19所造成之變形量而能於 研磨製造中，既可隨著整個被研磨基板面之彎曲、翹曲或 厚度不均等狀態而變形，亦可將圖案等之階差研磨出較佳 之平坦度。與第4圖的形況相同，尤適於欲使半導體晶圓 315211 14 200414966 等基^達到全面平坦化而減少設計佈局限制、提升配線密 度之f月/兄下使用。&時，亦可利用雙面膠或黏合劑將研磨 塾16以可自由取下之方式貼附於薄膜層19的表面，在研 磨墊Μ的研磨性能力衰退後，可換貼新的研磨墊16。 第6圖”第7圖為顯示本發明化學機械研磨（CMp)裝 置的研磨平台部分的其他構成例之圖，其中第6圖為側剖 面圖’第7圖為第6圖㈤A_a線剖面圖。本化學性機械研 磨（CMP)^置與第5圖所示的化學機械研磨（咖）裳置的 不同關在於：利用流體室2G(加壓處理室）按壓薄膜層 19’在薄膜層19盘研麻执—日日 /、研潛墊16之間，配設因該薄膜層】9 按壓而上下移動之多數個活塞24。 一活塞24係藉由活塞引導板25而朝著上下方向移動於 活基冲PS中。4膜層19係利用環狀推壓構件％以 數：螺栓27固定在旋轉平台1〇的上面，而活塞引導板u 則是以螺栓28固定在該環狀推壓構件％的上面。 如上所述’藉由在薄膜層19的上面，設置多數個藉由 活塞引導板25使之得以朝著上下方向移動於活塞沖程μ 中的活塞24,即可利用流體室2〇的壓力調整薄膜層 =形量，同時亦可調整活塞24的上下移動量，而能於研磨 衣程中，既可隨整個被研磨基板面m曲或厚 均等狀態而變开)，亦可將圖案等之階差研磨出較佳之；垣 度。因此’尤適於欲使半導體晶圓等基板達到全面平垣: 而減少設計佈局限制、提升配線密度之情況下使用。此時 亦可利用雙面膠或黏合劑等將研磨墊16以可自由取4之 315211 15 200414966 方式貼附於活塞24以及活塞引導板25的表面，在研磨墊 1 6的研磨性能衰退後，可換貼新的研磨墊i 6。 第8圖、第9圖為顯示本發明化學機械研磨（cMp)裝 置的研磨平台部分的另外其他構成例之圖，其中第8圖為 側剖面圖，第9圖（a)為第8圖的A部份的放大圖，第9圖 (b)及第9圖（c)為往第9圖（a)B-B箭頭方向注視之剖面圖。 在第8圖、第9圖中，在此係使用表面具有多個凹部(此處 為圓形或五角形）11B的橡膠薄膜作為彈性體薄膜11 c。彈 性體薄膜11C的凹部lib的開口部如第9圖⑷所示，係利 用黏合劑黏貼在旋轉平台10的上端面。且在各個凹部工^ 内封入流體。 如上所述，由於係使用表面具有多個凹部ub，且在 各個凹部内封入流體之橡膠薄膜作為彈性體薄膜iic，因 此與表層研磨墊16的硬度相比，下層彈性體薄膜UC的 硬度較低（可藉由封入的流體壓力來調整），使研磨墊16與 彈性體薄m nc #以互補雙方的缺點，而能於研磨製程 中’既可隨整個被研磨基板面之彎曲、㈣或厚度不^ 狀態而變形，亦可將圖案等的階差研磨出較佳之平坦度： 因此，尤適於欲使半導體晶圓等基板達到全面平坦減 少設計佈局限制、提升配線密度之情況下使用。此時，亦 可利用雙面膠或黏合劑等將研磨墊丨6以可自由取下’、 式貼附於彈性體薄膜11C的表面，在研磨之方 能衰退後，可換貼新的研磨墊16。 、磨性 第10圖為顯示本發明化學機械研磨(CMp)裝置的研磨 315211 16 200414966 平台部分的另外其他構之 是利用懸掛在滑^ 29 ^面圖。在此研磨平台係 送帶31的上面為貼@ ρ 月k帀31所構成，在該輸 HD的上面利 1D此外，在彈性體薄膜 貼研磨墊16。彈性，一 M寺以了自由取下之方式黏 # f生體缚膜j 1D的部份可 二9圖所示構成例之構件 ？ 3圖以及 用未顯示於圖中 苒、之構件。滑輪29係利 則朝箭頭D的方向:動前頭C的方向旋轉，輪… 帶/上^^有/㈣㈣仙而貼合於輪送 所保持之被研磨基板 研磨基板保持機構（上環等）32 板保持結構32朝並广壓在研磨墊16上，使被研磨基 朝則頭D的方向旋轉， 被研磨基板W。此^上述方式研磨 此吩，在研磨墊16的 換貼新的研磨墊16。如上所述以輸送 匕哀退後，可 代化與趟只 、τ方式（線性方式）取 同之效果。 ^十口 Μ亦可以獲得相 如上所述，在第1圖、第2圖、第3圖、第 9圖以及第1G圖中的實施例中，係使用= 變形的彈性體薄膜11(UA p θ產生 圖…圖、第6圖二第7:Γ層構件，·而在第4 汉罘7圖中，在下層機 因流體室叫加麼處理室）的按麼力而產生位移的薄膜声 ㈣19和活塞24,如此-來研磨平台即可且有 習用化學機械研磨裳置，雙層研磨塾之下層研磨塾= 可於研磨墊16的研磨性能衰退時，更換該研磨塾〗6， 315211 17 200414966 而形成一種研磨裝置，可使製程之效能穩定，達到降低化 學機械研磨製程成本，並使被研磨基板面内的研磨速度均 勻專目的。 卜本4明並未侷限於上述實施例，只要其在構成 上具有配置於研磨平台上、可隨著壓力產生變形之下層構 件或黏貼在下層機構上之研磨墊，並可在下層構件或^層 =上貼換研磨墊即可。亦，其構造只要能夠使研料 台_以具有習用化學機械研磨裝置之雙層研磨塾之下層研 磨墊的功能，ϋ能在研磨墊的研磨性能衰退時，更換該研 [圖式簡單說明] 、，第1圖為顯示本發明化學機械研磨（CMP)裝置的研 平口。卩分的構成例之側剖面圖。 工△第2圖為顯示本發明化學機械研磨（CMP)裝置的研磨 + 口邛分的其他構成例之側剖面圖。 弟3圖為第2圖之A部份的放大圖，其中第3 1 j弟3圖（b)的β-Β剖面圖。 第:圖為顯示本發明化學機械研磨（CMp)裝置的研磨 μ刀之另外的其他構成例之側剖面圖。 :圖為頒不本發明化學機械研磨（CMP)裝置的研声 千口 Γ刀之另外的其他構成例之側剖面圖。 平么邱、圖為喊不本發明化學機械研磨（CMP)裝置的研声 千…卜刀的另外的其他構成例之側剖面圖。 31521] 18 200414966 第7圖為第6圖的A-Λ剖面圖。 第8圖為顯不本發明化學機械研磨（cMp)裝置的研磨 平台部分的另外的其他構成例之側剖面圖。 第9圖為第8圖之a部份之放大圖，其中第$圖⑷ 為第8圖的A部份的側面圖，第9圖⑻及第9圖⑷係往 第9圖⑷、第9圖（b)的B_B箭頭方向注視之剖面圖。 第1〇圖為顯示本發明化學機械研磨（CMP)裝置的研磨 平台部分的另外的其他構成 例之側剖面圖。 10 旋轉工作台 lb 11A至11D 彈性體薄膜 11a 突起部 lib、 20a 凹部 12 壞狀推壓構件 13、 15、27、28 螺栓 14 推壓構件 16 研磨墊 17 馬達 18 研磨區域 19 薄膜層 20 流體室 21 流路 22 旋轉接頭 23 壓力流體源 24 活塞 25 活塞引導板 26 環狀推壓構件 29、30 滑輪 31 輸送帶 32 被研磨基板保持機構（上 環等）A polishing apparatus according to a sixth aspect of the present invention includes: a polishing object holding mechanism for holding an object to be polished; and a polishing platform having a polishing surface; and the polishing object held by the polishing object holding mechanism is pressed against the polishing of the polishing platform. On the surface, the relative movement between the object to be polished held by the object holding mechanism and the polishing surface of the polishing platform is used to grind the object to be polished. An elastomer film having a plurality of recesses is provided on the polishing platform. A fluid is placed between the elastomer film and the upper surface of the polishing platform, and a polishing pad having a polishing surface thereon is stretched on the elastomer film in a replaceable manner. As described above, 'the elastic group film with a large number of recesses is stretched on the grinding platform to seal the fluid into the hollow between the elastomer film table and the grinding platform 315211 200414966' and on the elastomer film It can be replaced in a replaceable way: it has: a polishing pad with a grinding surface. With the above-mentioned structure, the elastomer film enclosing the fluid on the evening can have the function of the conventional polishing pad under the double-layer polishing pad. When the polishing performance of the polishing pad deteriorates, the grinding pad is replaced to form a polishing device, which can stabilize the performance of the process, achieve low cost of polishing, and make the polishing speed in the object to be polished uniform. 7. The polishing device according to the seventh aspect of the present invention is provided with a grinding object holding mechanism that holds the grinding object; and a polishing platform having a polishing surface, and the grinding object held by the grinding object holding mechanism is pressed against the grinding In the grinding device for grinding the grinding surface of the platform, and using the relative movement between the grinding object held by the grinding object holding mechanism and the grinding surface of the platform, the grinding platform is suspended by a pulley. It is composed of a conveyor belt, an elastomer film is stretched on the conveyor belt, and a polishing pad having a polishing surface is stretched on the elastomer film in a replaceable manner. As mentioned above, since the polishing platform is composed of a conveyor belt suspended between pulleys, an elastomer film is stretched on the conveyor belt, and a polishing surface is stretched on the aforementioned elastomer film in a replaceable manner. The polishing pad enables the elastomer film to have the function of a conventional polishing pad under the double-layer polishing pad, and when the polishing performance of the polishing pad deteriorates, the polishing pad can be replaced to stabilize the processing performance of the polishing device and reduce the polishing process. Cost, and uniform polishing speed in the object. The above and other objects of the present invention can be understood from the attached drawings and the following embodiments. 315211 10 [Embodiment] Hereinafter, the present invention will be described with reference to the drawings. Fig. 1 is a diagram showing a fourth embodiment of the principle of the chemical machine / control mechanism of the present invention. Flat A part Eight Μ Μ # Polishing of a stacking machine polishing (CMP) device A side cross-sectional view of a configuration example of a thousand-port P knife. For example, 〇11A is fixed to the surface of the rotating platform 10, and the elastomer film-U is a lower-layer member, and the polishing pad 16 is adhered to the surface of the elastomer film 11A. Elastomeric film 11A is a kind of material made of non-bell; ^ Μ ^ ^ ^ ^, 哉 cloth or pore resin film, etc., is a kind of cymbal film produced with the magnitude of pressure. The method for fixing the elastomer film is to fix the outer edge of the rotating flat cymbal 10 with a plurality of I-check members 12-the rear number of adjusting bolts 13 and meanwhile, the center is precisely centered by the disc-shaped pressing member 14 The part is fixed with a bolt 15. In addition, regarding the method of fixing the elastomer film 11A to the surface of the rotating platform μ: The method can be used to adhere the elastomer film uA to the surface of the rotary platform 10 using double-sided tape or adhesive, Then, the ring-shaped pusher 12 and the plurality of bolts 13 and the disc-shaped pusher member 14 and the bolt 15 are used to fix the elastomer film uA. In addition, in order to easily remove the polishing pad 16, a double-sided tape can be used to stick the dots, so the surface of the elastomer film ΠA must maintain sufficient smoothness. The polishing pad 16 is basically a single-layer polishing pad (for example, a foamed polyurethane polishing pad) which has a function of eliminating the difference in polishing surface and has a high hardness. A double-sided tape or an adhesive is used to directly and directly adhere to the surface of the elastomer film 11A in a removable manner. In addition, the polishing pad 16 is not limited to a single-layer pad, and a double-layer polishing pad may be used. The rotating platform 10 can be rotated in a certain direction by a motor 17. Except for the 315211 11 200414966 ring-shaped pressing member 12 and the disc-shaped pressing member μ of the polishing pad 16, the circular belt-shaped portion on the polishing pad constitutes the polishing area i 8 and will not be shown in the figure. The substrate to be polished held by the substrate holding mechanism is placed in the polishing area or 8 polishing pads! 6 On the upper polishing surface, the rotation of the rotary table ⑺ and the rotation of the substrate holding mechanism (upper ring, etc.) cause the polishing pad and the substrate to be moved relative to each other, thereby polishing the substrate to be polished. In addition, in the figure, Although this part is omitted, a polishing liquid is supplied on the surface of the polishing pad 16. As described above, the polishing pad 16 having a higher hardness is used as the surface polishing pad 16, and the elastomer film 11A having a lower hardness is used In the lower layer, the higher hardness of the polishing pad 16 and the lower hardness of the elastomer film "A", complementary and square defects, can be used in the polishing process, can follow the entire semiconductor wafer surface bending and warping Or uneven thickness, it can also polish the level difference of the ® case, etc. to achieve better flatness. Therefore, it is particularly suitable for the board to be fully flattened such as half-V limb Japanese yen to reduce design layout restrictions and improve wiring In addition, after the polishing performance of the polishing pad 16 has deteriorated, the polishing pad 16 can be removed from the elastomer film 丨 A and replaced with a new polishing pad 16. Figure 2 Figure 3 shows the invention Other structural diagrams of the grinding platform part of the mechanical mechanical polishing (cMp) device, where the second figure is a side sectional view, and the third figure (a) and the third figure (b) are enlarged views of the A part of the second figure, Fig. 3 (c) is a cross-sectional view of Fig. 3 (a) and Fig. 3 (b_b). In Fig. 2 and Fig. 3, parts with the same symbol as in the! Icon indicate the same knife. The other illustrations are the same. In this case, a rubber film with a number of dog bumps (a cylindrical protrusion) 1 丨 a on the surface is used as 315211 200414966 as the elastomer film 11B. The figure 3 shows the direction facing the polishing pad towards the rotation ... side. By setting == = sexual body film and polishing 塾 16 or rotating platform i :, this is the so-called circuitous space, which is also ^ 马In order to distribute the local pressure to the surroundings, and make the elastic protrusions prone to change the space, the deformation of the polishing pad ^, the work θ, hunting from the upper small j to better followability. As = Toji uses a rubber film with a large number of protrusions on the surface of 1U = Yang body ㈣UB. Compared with the hardness of the surface polishing pad M, The elastomer film UB # complements the defects of the square; 1 makes the grinding 塾 16 complements the shortcomings of the square, and can be used in the grinding process to bend, warp or uneven thickness of the entire semiconductor wafer surface: deformation, 'It is also possible to polish the step of the pattern to obtain a better flatness. Nikkei' can also use a double-sided tape or an adhesive to freely remove the polishing pad 16: adhere to the surface of the thin elastomer UB, After the performance of the polishing pad M is deteriorated, a new polishing pad 16 can be replaced. The fourth section shows a side sectional view of another example of the structure of the polishing: stage part of the chemical mechanical polishing (cMp) device of the present invention. It is shown that a recessed portion 20a is provided in a circular band-like manner on the surface of the rotating flat = 20—, and the opening of the recessed portion is covered with an elastic film and a thin metal film | 19 to form a fluid to 20%. Then, the fluid chamber 20 is filled with a certain pressure of gas and liquid. "As mentioned above, the recessed portion 20a is provided on the rotating platform, and the opening portion of the recessed portion is covered with a thin concrete layer 19 to form a fluid chamber 20. Therefore, phase 13 31521] 200414966 compared with the polishing pad 16 of the surface layer, The 屙 force seems to have a large amount of deformation. Therefore, the same seven layers of the thin film 造成 19 as described above have the disadvantages of complementarity and can be researched. In the wide range, it is possible to grind a better level with the step difference of the pattern pattern being studied, and to achieve a comprehensive level of substrates such as conductor wafers *, which is especially suitable for use in the case of half-liter wiring density = ,, Design layout restrictions, promotions • Can also use double-sided tape or glued grass to attach to the elastomer film by removing it. 11 Β = surface. After grinding, the grinding performance of 16 can be replaced with new grinding. FIG. 5 is a side cross-sectional view showing another example of the configuration of the operation = knife of the chemical mechanical polishing (CMP) apparatus of the present invention. The difference between the chemical mechanical polishing (⑽) and the chemical mechanical polishing (CMp) device in FIG. 4 is that the flow path 21 for supplying pressure fluid to the fluid chamber 20 is connected, and the production chamber π is added as Press the part of the processing chamber. The flow path 21 is connected to the pressure fluid source 23 via a rotary joint = through a central portion of the motor 17. By controlling the pressure of the fluid supplied from the pressure fluid source 23, the fluid chamber 20 can be adjusted, that is, the pressure of the pressurized processing chamber. As described above, the flow path 21 providing the pressurized fluid is connected to the fluid chamber 20 of the rotary platform 10, and the fluid chamber 20 is used as the pressurizing processing chamber. The deformation of the film layer 19 caused by the pressure can be adjusted in the above manner. It can be deformed with polishing, warping or uneven thickness of the entire surface of the substrate to be polished, and it can also polish the level difference of the pattern to a better flatness. It is the same as the situation in Figure 4. It is especially suitable for use on semiconductor wafers, such as semiconductor wafers 315211 14 200414966, which can achieve overall flattening, reduce design layout restrictions, and increase wiring density. & can also use a double-sided tape or an adhesive to attach the polishing pad 16 to the surface of the film layer 19 in a freely removable manner. After the polishing ability of the polishing pad M has deteriorated, a new polishing can be replaced.垫 16。 Pad 16. FIG. 6 ”FIG. 7 is a view showing another configuration example of the polishing platform part of the chemical mechanical polishing (CMp) device of the present invention, wherein FIG. 6 is a side sectional view, and FIG. 7 is a sectional view taken along line A-a in FIG. 6. The difference between the chemical mechanical polishing (CMP) device and the chemical mechanical polishing (coffee) device shown in FIG. 5 is that the film layer 19 'is pressed on the film layer 19 by the fluid chamber 2G (pressurized processing chamber). The researching hemp-sunday /, and the researching latent pad 16 are provided with a plurality of pistons 24 that move up and down due to the pressing of the film layer. 9 A piston 24 is moved by the piston guide plate 25 in the up and down direction. In the living base punch PS. The 4 film layer 19 uses a ring-shaped pressing member: bolts 27 are fixed on the rotary platform 10, and the piston guide plate u is fixed to the ring-shaped pressing member with bolts 28. As described above, 'the fluid chamber 2 can be used by providing a plurality of pistons 24 on the film layer 19 by the piston guide plate 25 so that they can move up and down in the piston stroke μ. Pressure adjustment film layer = shape, and also can adjust the up and down movement of the piston 24 In the grinding process, it can be changed with the entire surface of the substrate to be polished, or the thickness is uniform.) It can also be used to grind the step of the pattern etc .; If you want to achieve a full level of substrates such as semiconductor wafers: Use it to reduce design layout restrictions and increase wiring density. At this time, you can also use double-sided adhesive or adhesive to place the polishing pad 16 so that it can be freely taken 315211 15 200414966 It is affixed to the surface of the piston 24 and the piston guide plate 25, and after the polishing performance of the polishing pad 16 has deteriorated, a new polishing pad i 6 can be replaced. Figures 8 and 9 show the chemical mechanical polishing of the present invention ( cMp) A diagram of another configuration example of the polishing platform part of the apparatus, wherein FIG. 8 is a side sectional view, and FIG. 9 (a) is an enlarged view of part A of FIG. 8 and FIG. 9 (b) and FIG. Fig. 9 (c) is a cross-sectional view looking in the direction of the arrow of BB in Fig. 9 (a). In Figs. 8 and 9, the surface used here has a plurality of recesses (here, circular or pentagonal) 11B The rubber film is used as the elastomer film 11c. The opening of the recessed part lib of the elastomer film 11C is As shown in FIG. 9 (a), the upper end surface of the rotary platform 10 is adhered with an adhesive. The fluid is sealed in each recessed portion. As described above, since the surface has a plurality of recessed portions ub, the fluid is sealed in each recessed portion. The rubber film is used as the elastomer film iic, so the hardness of the lower layer elastomer film UC is lower than that of the surface layer polishing pad 16 (which can be adjusted by the pressure of the enclosed fluid), making the polishing pad 16 and the elastomer thin. nc # can complement each other's shortcomings, and can be deformed in the polishing process with the bending, ㈣ or thickness of the entire surface of the substrate to be polished, and can also grind the steps of patterns and other flatness to better flatness: Therefore, it is particularly suitable for use in the case where a substrate such as a semiconductor wafer is to be completely flat, design restrictions are reduced, and wiring density is increased. At this time, you can also use a double-sided tape or an adhesive to attach the polishing pad 丨 6 to the surface of the elastomer film 11C so that it can be removed freely. After the polishing can fade, you can change it to a new polishing.垫 16。 Pad 16. Grinding Figure 10 is a diagram showing the grinding of the chemical mechanical polishing (CMp) device of the present invention. The upper surface of the polishing belt 31 is formed by affixing @ ρ 月 k 帀 31 on the upper surface of the polishing platform. Furthermore, the upper surface of the HD is attached with a 1D polishing pad 16. Elastic, one M temple sticks in a way that it can be removed freely. # F 生 体 Binding membrane j 1D part can be a component of the example shown in Figure 9? Figure 3 and components not shown in the figure. The pulley 29 series is oriented in the direction of the arrow D: the front head C is rotated, and the wheel ... belts / up ^^ yes / ㈣㈣xian and fits on the polished substrate holding mechanism (upper ring, etc.) of the polished substrate held by the wheel 32 plates The holding structure 32 is pressed on the polishing pad 16 in a wide direction, and the substrate to be polished is rotated by rotating the substrate to be polished in the direction of the head D. Polish the phenol in the above manner, and replace the polishing pad 16 with a new polishing pad 16. As mentioned above, after transporting and retreating, you can replace the effect with the trajectory and τ mode (linear mode). ^ Ten mouths can also be obtained as described above. In the embodiments of FIGS. 1, 2, 3, 9, and 1G, the elastic film 11 (UA p θ generation diagrams ... Figures, Figures 6, 2 and 7: Γ layer members, and in Figure 4 Han 罘 7, in the lower machine due to the pressing force of the fluid chamber called the plus processing chamber) the displacement of the film sound ㈣19 and piston 24, so-to grind the platform and have conventional chemical mechanical polishing dressing, double-layer grinding 塾 lower grinding 塾 = can be replaced when the grinding performance of the polishing pad 16 declines, 6, 315211 17 200414966 The formation of a polishing device can stabilize the efficiency of the process, achieve the purpose of reducing the cost of the chemical mechanical polishing process, and uniform the polishing speed in the surface of the substrate to be polished. The book 4 is not limited to the above embodiments, as long as it is structurally provided with a lower-layer member or a polishing pad adhered to a lower-layer mechanism that can be deformed with pressure on the polishing platform, and can be used on the lower-layer member or ^ Layer = paste the polishing pad. Also, as long as its structure enables the grinding table to function as a double-layer grinding pad with a conventional chemical-mechanical polishing device, the grinding pad can be replaced when the grinding performance of the pad is degraded. [Schematic description] Fig. 1 is a plan view of a chemical mechanical polishing (CMP) apparatus of the present invention. A side sectional view of an example of a centrifugal component. FIG. 2 is a side cross-sectional view showing another configuration example of the polishing + mouth splitting of the chemical mechanical polishing (CMP) apparatus of the present invention. Fig. 3 is an enlarged view of part A of Fig. 2, in which the β-B cross-sectional view of Fig. 3 (b) is shown in Fig. 3 (b). Figure: A side cross-sectional view showing another configuration example of a grinding μ knife of a chemical mechanical polishing (CMp) device of the present invention. : The figure is a side cross-sectional view of another example of the constitution of a lapping sound of a chemical mechanical polishing (CMP) apparatus of the present invention. Ping Mo Qiu, the picture is a side cross-sectional view of another example of the structure of the chemical mechanical polishing (CMP) apparatus of the present invention. 31521] 18 200414966 Figure 7 is the A-Λ cross-sectional view of Figure 6. Fig. 8 is a side sectional view showing another configuration example of a polishing table portion of a chemical mechanical polishing (cMp) apparatus of the present invention. FIG. 9 is an enlarged view of part a of FIG. 8, where FIG. ⑷ is a side view of part A of FIG. 8, and FIGS. 9 and 9 are to FIG. 9 and FIG. 9. Figure (b) is a cross-sectional view in the direction of the arrow B_B. Fig. 10 is a side sectional view showing another configuration example of a polishing table portion of a chemical mechanical polishing (CMP) apparatus of the present invention. 10 Rotary table lb 11A to 11D Elastomer film 11a Protrusions lib, 20a Recesses 12 Bad push members 13, 15, 27, 28 Bolts 14 Push members 16 Polishing pads 17 Motor 18 Polishing area 19 Film layer 20 Fluid chamber 21 Flow path 22 Rotary joint 23 Pressure fluid source 24 Piston 25 Piston guide plate 26 Ring-shaped pressing member 29, 30 Pulley 31 Conveyor belt 32 Polished substrate holding mechanism (upper ring, etc.)
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