CN115805523A - Fixed plate, polishing device and polishing method - Google Patents
Fixed plate, polishing device and polishing method Download PDFInfo
- Publication number
- CN115805523A CN115805523A CN202211707177.6A CN202211707177A CN115805523A CN 115805523 A CN115805523 A CN 115805523A CN 202211707177 A CN202211707177 A CN 202211707177A CN 115805523 A CN115805523 A CN 115805523A
- Authority
- CN
- China
- Prior art keywords
- polishing
- silicon wafer
- polishing pad
- fixed plate
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 110
- 239000010703 silicon Substances 0.000 claims abstract description 110
- 238000007517 polishing process Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present disclosure relates to a surface plate used for a polishing apparatus and including a surface plate plane for attaching thereon a polishing pad for polishing a silicon wafer, the surface plate plane including a groove provided therein with an air passage capable of supplying an air pressure within the groove, so that a first portion of the polishing pad attached on the surface plate plane corresponding to an edge of the silicon wafer can be lower than a second portion of the polishing pad corresponding to a central region of the silicon wafer in a direction perpendicular to the surface plate plane during polishing of the silicon wafer. By the fixed disc, the polishing equipment and the polishing method, the flatness of the surface of the silicon wafer is improved.
Description
Technical Field
The disclosure relates to the technical field of semiconductor processing and manufacturing, in particular to a fixed disc, polishing equipment and a polishing method.
Background
With the continuous development of semiconductor technology, the requirement for the flatness of the surface of a silicon wafer is higher and higher. In the silicon wafer manufacturing process, the flatness of the silicon wafer can be improved by a polishing process. The polishing process generally includes a double-side polishing step of polishing both front and back sides of the silicon wafer and a final polishing step of polishing only the front side of the silicon wafer.
In the final polishing, the silicon wafer adsorbed to the polishing head is pressed against a polishing pad arranged below the polishing head to polish the front surface of the silicon wafer by means of the polishing pad, wherein the silicon wafer and the polishing pad are always in rotation at the time of polishing.
However, due to the centrifugal effect caused by rotation, polishing liquid is easy to gather at the edge of the silicon wafer, so that the polishing degree of the edge of the silicon wafer is larger than that of the center of the silicon wafer; and because the silicon wafer is pressed on the polishing pad, the polishing pad is compressed and deformed and can exert larger action on the outer edge of the silicon wafer close to the chamfer, and can also have stronger polishing and grinding action on the edge of the silicon wafer relative to the center of the silicon wafer, so that the thickness of the edge of the silicon wafer is thinner than that of the center of the silicon wafer, and the flatness of the surface of the silicon wafer is deteriorated.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
The purpose of the present disclosure is to provide a fixed plate for a polishing apparatus capable of reducing the degree of polishing of the edge of a silicon wafer.
In order to achieve the above object, according to one aspect of the present disclosure, there is provided a surface plate for a polishing apparatus, the surface plate including a surface plate plane for attaching thereon a polishing pad for polishing a silicon wafer,
the surface plate includes a groove provided with an air passage therein, the air passage being capable of providing air pressure within the groove so that a first portion of the polishing pad attached on the surface plate corresponding to an edge of the silicon wafer can be lower than a second portion of the polishing pad corresponding to a central region of the silicon wafer in a direction perpendicular to the surface plate during polishing of the silicon wafer.
In the above-described fixed plate, the groove may be an annular groove arranged concentrically with the fixed plate.
In the above-described fixed plate, the annular grooves may include an outer annular groove near an outer periphery of the fixed plate and/or an inner annular groove near a center of the fixed plate, wherein each of the outer and inner annular grooves is capable of making the first portion of the polishing pad lower than the second portion in the direction by supplying negative air pressure from the respective air passages.
In the above-described fixed plate, the annular groove may include an intermediate annular groove located between an outer periphery and a center of the fixed plate, wherein the intermediate annular groove is capable of making the first portion of the polishing pad lower than the second portion in the direction by supplying positive air pressure through an air passage thereof.
In the above-described fixed plate, the annular groove may be a plurality of annular grooves arranged continuously in a radial direction of the fixed plate.
In the above-described surface plate, the amount of air pressure provided by the air passage may be adjustable.
In the above surface plate, the amount of the air pressure supplied from the air passage can be adjusted according to the temperature difference between the edge and the central region of the wafer during the polishing process, or can be adjusted according to the flatness condition of the wafer polished at the previous time.
In the above-described surface plate, the air passages may extend following the extending path of the grooves.
According to another aspect of the present disclosure, there is provided a polishing apparatus including:
the surface plate of any of the preceding paragraphs;
a polishing pad attached to a surface of the surface plate; and
and a polishing head for holding the silicon wafer in contact with the polishing pad.
According to still another aspect of the present disclosure, there is provided a polishing method performed using the polishing apparatus described in the preceding paragraph, the polishing method including:
supplying air pressure into the grooves through the air passages such that the first portion of the polishing pad is lower than the second portion in a direction perpendicular to the plane of the surface plate; and
the silicon wafer held by the polishing head is brought into contact with the polishing pad by the polishing head to polish the silicon wafer.
According to the present disclosure, by providing a groove on the surface of the surface plate and providing air pressure in the groove by the air passage to drive the portion of the polishing pad attached on the surface of the surface plate corresponding to the groove so that the first portion of the polishing pad corresponding to the edge of the silicon wafer is lower than the second portion of the polishing pad corresponding to the central region of the silicon wafer in the direction perpendicular to the surface of the surface plate, on the one hand, the plastic deformation of the first portion of the polishing pad when contacting the edge of the silicon wafer is reduced overall through the entire polishing process and thus the effect of the polishing pad on the outer edge of the silicon wafer is reduced, reducing the degree of polishing and grinding of the edge of the silicon wafer; on the other hand, the amount of polishing liquid received from the polishing pad at the edge of the silicon wafer is relatively reduced through the whole polishing process, which also reduces the degree of polishing of the edge of the silicon wafer, thereby reducing the difference between the degree of polishing of the edge of the silicon wafer and the degree of polishing of the central region of the silicon wafer and improving the overall flatness of the polished silicon wafer.
The above features and advantages and other features and advantages of the present disclosure will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
FIG. 1 is a top plan view of a surface plate according to an embodiment of the present disclosure;
FIG. 2 is a cross-sectional view of the fixed plate taken along a diameter of the fixed plate;
FIG. 3 shows the surface plate shown in FIG. 2 with a polishing pad attached thereto in a top plan view, wherein a silicon wafer is shown in contact with the polishing pad during polishing;
FIG. 4 schematically illustrates, in cross-section, one mode of operation of the surface plate during polishing, wherein the gas passages provide negative gas pressure within the outer annular groove and the inner annular groove; and
fig. 5 schematically shows in cross-section another mode of operation of the surface plate during polishing, wherein the gas passages provide positive gas pressure in the intermediate annular groove.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended to be illustrative only and is not intended to be in any way limiting.
As mentioned earlier, during the polishing process, the polishing pad and the silicon wafer are both rotated, for example, in the same direction, and the centrifugal effect caused by the rotation tends to concentrate the polishing liquid at the edge of the silicon wafer, resulting in a greater degree of polishing at the edge of the silicon wafer than at the center of the silicon wafer; in addition, the polishing pad exerts a large effect on the outer edge of the silicon wafer near the chamfer due to plastic deformation upon contact with the silicon wafer, and also causes a large degree of polishing of the edge of the silicon wafer compared to the center of the silicon wafer, thereby deteriorating the flatness of the surface of the silicon wafer.
In order to solve the above problems, it is necessary to eliminate or at least reduce the difference between the degree of polishing at the edge of the wafer and the degree of polishing at the center of the wafer.
The inventors have noted that since both the polishing pad and the silicon wafer rotate during polishing, portions of the edge of the silicon wafer (or, as will be understood, a portion) periodically appear during polishing in two regions of the polishing pad, namely, an annular region near the periphery of the polishing pad and an annular region near the center of the polishing pad (i.e., for a fixed portion of the edge of the silicon wafer, they appear in the annular regions at regular intervals), and portions of the central region of the silicon wafer always appear in the middle region of the polishing pad, i.e., a region between the two annular regions.
To this end, according to an aspect of the present disclosure, there is provided a surface plate for a polishing apparatus, the surface plate including a surface plate plane for attaching thereon a polishing pad for polishing a silicon wafer, the surface plate plane including a groove provided therein with an air passage capable of supplying air pressure within the groove, so that a first portion of the polishing pad attached on the surface plate plane corresponding to an edge of the silicon wafer can be lower than a second portion of the polishing pad corresponding to a central region of the silicon wafer in a direction perpendicular to the surface plate plane during polishing of the silicon wafer.
Since each part of the edge of the silicon wafer periodically appears in the annular region during the polishing process, the part of the polishing pad attached on the surface of the surface plate corresponding to the groove is driven by the air pressure supplied by the air passage in the groove so that the first part of the polishing pad corresponding to the edge of the silicon wafer is lower than the second part of the polishing pad corresponding to the central region of the silicon wafer in the direction perpendicular to the surface of the surface plate, on one hand, the plastic deformation of the first part of the polishing pad when contacting the edge of the silicon wafer can be reduced as a whole through the entire polishing process and thus the effect of the polishing pad on the outer edge of the silicon wafer is reduced, and the polishing degree of the edge of the silicon wafer is reduced; on the other hand, the amount of polishing liquid received by the silicon wafer edge from the polishing pad can be relatively reduced through the whole polishing process, and the polishing degree of the silicon wafer edge can also be reduced, so that the difference between the polishing degree of the silicon wafer edge and the polishing degree of the silicon wafer central area can be reduced, and the overall flatness of the polished silicon wafer can be improved.
Specifically, referring to fig. 1 to 3, the surface plate 1 includes a surface plate plane 11, the polishing pad 2 is attachable on the surface plate plane 11 for polishing the silicon wafer 3, the groove 12 is provided in the surface plate plane 11, and the air passage 13 is provided in the groove 12, for example, a cross section of the groove 12 in a direction perpendicular to the surface plate plane 11 may be rectangular or funnel-shaped, and the air passage 13 may be provided at the bottommost portion of the groove 12. The gas duct 13 may provide gas or suction to provide gas pressure within the groove 12, and the groove 12 may be an annular groove arranged concentrically with the fixed plate 1. During polishing, by supplying the gas pressure into the grooves 12 through the gas passages 13, a first portion 21 (annular region shown by a dotted line) of the polishing pad 2 corresponding to the edge of the silicon wafer 3 can be made lower than a second portion 22 (annular region shown by a dotted line) of the polishing pad 2 corresponding to the central region of the silicon wafer 3 in a direction perpendicular to the surface plate plane 11.
That is, the gas pressure supplied by the gas passage 13 in the groove 12 drives the portion of the polishing pad 2 attached on the surface 11 of the fixed plate corresponding to the groove 12 to be lifted and lowered with the change of the gas pressure, thereby reducing the polishing degree of the edge of the silicon wafer as a whole, eliminating or at least reducing the difference between the polishing degree of the edge of the silicon wafer and the polishing degree of the central region of the silicon wafer, and improving the overall flatness of the polished silicon wafer.
It is conceivable that the groove 12 may be part of an annular groove arranged concentrically to the stator plate 1, for example one or more arc-shaped sections of the annular groove. In this case, since each portion of the edge of the silicon wafer still periodically appears in the portion of the polishing pad corresponding to the arc section during polishing, it is possible to reduce the difference between the degree of polishing of the edge of the silicon wafer and the degree of polishing of the central region of the silicon wafer, thereby improving the overall flatness of the polished silicon wafer.
In the embodiment of the present disclosure, as shown in fig. 4, the annular grooves (i.e., grooves) 12 may include an outer annular groove 121 near the outer circumference of the surface plate 1 and/or an inner annular groove 122 near the center of the surface plate 1, wherein each of the outer and inner annular grooves 121 and 122 is capable of making the first portion 21 of the polishing pad 2 lower than the second portion 22 in a direction perpendicular to the surface plate 11 by supplying negative air pressure through the respective air passages 13.
Specifically, when only the outer annular groove 121 or only the inner annular groove 122 is included, since various portions of the silicon wafer edge periodically appear at portions of the polishing pad 2 corresponding to the annular groove, the object of reducing the degree of polishing of the silicon wafer edge can still be achieved. Of course, if both the outer annular groove 121 and the inner annular groove 122 are included, the above object can be more effectively achieved by providing negative air pressure in both by the air passage 13. As shown in fig. 4, the portions of the polishing pad 2 corresponding to the outer annular groove 121 and the inner annular groove 122 are lowered from the dotted-line position to the solid-line position.
According to another embodiment of the present disclosure, as shown in fig. 5, the annular groove (i.e., groove) 12 may include an intermediate annular groove 123 located between the outer circumference and the center of the surface plate 1, wherein the intermediate annular groove 123 is capable of making the first portion 21 of the polishing pad 2 lower than the second portion 22 in a direction perpendicular to the surface plate plane 11 by providing a positive air pressure through its air passages 13.
In this case, since a positive air pressure is supplied into the intermediate annular groove 123 through the air passages 13 (as shown in FIG. 5, the portion of the polishing pad 2 corresponding to the intermediate annular groove 123 rises from the dotted line position to the solid line position), the second portion 22 of the polishing pad 2 corresponding to the central region of the silicon wafer 3 is higher than the first portion 21 of the polishing pad 2 corresponding to the edge of the silicon wafer 3 in the direction perpendicular to the surface plate 11, whereby the degree of polishing of the silicon wafer edge as a whole can be reduced, thereby eliminating or at least reducing the difference between the degree of polishing of the silicon wafer edge and the degree of polishing of the silicon wafer central region, and improving the overall flatness of the polished silicon wafer.
It is contemplated that the grooves 12 may include both the intermediate annular groove 123 and the outer and/or inner annular grooves 121, 122, and that the intermediate annular groove 123, the outer annular groove 121, and the inner annular groove 122 may each provide positive or negative air pressure through the air passage, as long as the first portion 21 of the polishing pad 2 is lower than the second portion 22 in a direction perpendicular to the surface plate 11.
According to an embodiment of the present disclosure, the annular groove (i.e., the groove) 12 may be a plurality of annular grooves arranged continuously in a radial direction of the fixed plate 1.
For example, the annular groove 12 may be a plurality of annular grooves arranged continuously in the radial direction from the center to the circumferential edge of the surface plate 1, whereby the degree of polishing of the entire silicon wafer can be more finely controlled in the radial direction, and the overall flatness of the silicon wafer can be improved more by reducing the difference between the degrees of polishing of the respective annular portions of the entire silicon wafer in the radial direction.
On the other hand, it may also be a plurality of annular grooves arranged continuously in the radial direction of the surface plate 1 only for the outer annular groove 121, the inner annular groove 122, or the intermediate annular groove 123, whereby the degree of polishing of the entire silicon wafer can be more finely controlled in the radial direction only for the region of this single annular groove.
According to embodiments of the present disclosure, the amount of air pressure provided by the airway 13 is adjustable.
For example, the amount of air being exhausted (or supplied) and inhaled by the air passage 13 may be controlled by the controller to thereby control the amount of air pressure supplied by the air passage 13 within the recess 12. By adjusting the amount of the air pressure in the grooves 12, the amount of the lifting displacement of the portion of the polishing pad 2 corresponding to the grooves 12 can be controlled, and thereby the degree of polishing of a specific portion of the silicon wafer can be controlled.
In this manner, when the degree of polishing of the wafer edge is only slightly greater relative to the degree of polishing of the central region of the wafer, a slight negative air pressure may be provided within the outer annular groove 121, for example, while when the degree of polishing of the wafer edge is greater relative to the degree of polishing of the central region of the wafer, a relatively greater negative air pressure may be provided within the outer annular groove 121, whereby differences between the degrees of polishing of the wafer edge and the central region may be more flexibly and accurately eliminated or at least reduced.
In the embodiment of the present disclosure, the amount of the gas pressure supplied by the gas passage 13 can be adjusted according to the temperature difference between the edge and the central region of the silicon wafer during the polishing process, or can be adjusted according to the flatness condition of the previously polished silicon wafer.
The temperature of the edge of the wafer is usually slightly higher than that of the central region of the wafer, and if the temperature difference between the two is higher, it indicates that the polishing degree of the edge of the wafer is greater than that of the central region of the wafer, so that the difference between the polishing degrees of the edge and the central region of the wafer can be reduced by changing the amount of the air pressure in the groove 12 accordingly. On the other hand, the polishing degree difference between the edge of the silicon wafer polished at the previous time and the central region can be adjusted according to the flatness condition of the silicon wafer polished at the previous time, for example, when the polishing degree difference between the edge of the silicon wafer polished at the previous time and the central region is large, a relatively large negative air pressure can be provided in the outer annular groove 121, so that the polishing degree difference between the edge of the silicon wafer and the central region can be reduced.
In the embodiment of the present disclosure, the air passage 13 may extend following an extending path of the groove 12. For example, as shown in fig. 1, the extending path of the groove 12 is annular, and the air passage 13 may also extend in an annular shape. In this way, the action exerted by the air passages 13 can be uniformly distributed over the entire extension of the grooves 12, contributing to exerting a uniform action on the portions of the polishing pad corresponding to the grooves 12, thereby achieving more effective and accurate polishing degree control.
It will be appreciated that the air passages 13 may also take any other suitable form, for example being evenly spaced along the path of the grooves 12.
In an embodiment of the present disclosure, the gas channel 13 provides a gas pressure within the groove 12 by providing, for example, nitrogen or helium gas, which may be, for example, 0.1 kilopascal to 1 kilopascal.
Note that, as shown in fig. 1, the outer annular groove 121 is generally provided more inward of the circumferential edge of the surface plate 11, so that the circumferential edge of the surface plate 11 can leave an annular region to which the polishing pad 2 can be firmly attached at its circumferential edge, thereby making it possible to more firmly attach the polishing pad 2 to the surface plate 11 throughout the polishing process.
According to another aspect of the present disclosure, there is also provided a polishing apparatus including:
a fixed plate 1;
a polishing pad 2 attached to the surface plate plane 11 of the surface plate 1; and
a polishing head (not shown) for holding the silicon wafer in contact with the polishing pad.
According to still another aspect of the present disclosure, there is also provided a polishing method performed using the above polishing apparatus, the polishing method may include:
supplying air pressure into the grooves through the air passages such that the first portion of the polishing pad is lower than the second portion in a direction perpendicular to the surface of the platen; and
the silicon wafer held by the polishing head is brought into contact with the polishing pad by the polishing head to polish the silicon wafer.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (10)
1. A surface plate for a polishing apparatus, the surface plate comprising a surface plate plane for attaching thereon a polishing pad for polishing a silicon wafer,
the platen plane includes a groove provided with an air passage therein, the air passage being capable of providing air pressure within the groove so that a first portion of the polishing pad attached on the platen plane corresponding to an edge of the silicon wafer can be lower than a second portion of the polishing pad corresponding to a central region of the silicon wafer in a direction perpendicular to the platen plane during polishing of the silicon wafer.
2. The fixed plate of claim 1, wherein the groove is an annular groove disposed concentrically with the fixed plate.
3. A fixed plate as defined in claim 2 wherein the annular grooves comprise an outer annular groove near the outer periphery of the fixed plate and/or an inner annular groove near the center of the fixed plate, wherein the outer and inner annular grooves are each capable of making the first portion of the polishing pad lower than the second portion in the direction by providing a negative air pressure from the respective air passages.
4. A fixed plate according to claim 2, wherein the annular groove comprises an intermediate annular groove located between the outer periphery and the center of the fixed plate, wherein the intermediate annular groove is capable of making the first portion of the polishing pad lower than the second portion in the direction by providing positive air pressure through its air passages.
5. The fixed plate according to claim 2, wherein the annular groove is a plurality of annular grooves arranged continuously in a radial direction of the fixed plate.
6. A surface plate according to any of claims 1 to 5, wherein the amount of air pressure provided by the air duct is adjustable.
7. The platen according to claim 6, wherein the amount of the air pressure supplied from the air passage is adjustable according to a temperature difference between the edge and the central region of the wafer during the polishing process, or according to a flatness condition of the wafer polished at the previous time.
8. A surface plate according to any of claims 1 to 5, wherein the air passages extend following the path of extension of the grooves.
9. A polishing apparatus, characterized by comprising:
a fixed plate according to any one of claims 1 to 8;
a polishing pad attached to the surface of the surface plate; and
a polishing head for holding a silicon wafer in contact with the polishing pad.
10. A polishing method characterized by being carried out using the polishing apparatus according to claim 9, the polishing method comprising:
providing a gas pressure into the recess through the gas passage such that the first portion of the polishing pad is lower than the second portion in a direction perpendicular to the surface of the platen; and
and contacting the silicon wafer held by the polishing head with the polishing pad by the polishing head to polish the silicon wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211707177.6A CN115805523A (en) | 2022-12-29 | 2022-12-29 | Fixed plate, polishing device and polishing method |
| TW112105936A TW202330173A (en) | 2022-12-29 | 2023-02-18 | Fixed disc, polishing equipment and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211707177.6A CN115805523A (en) | 2022-12-29 | 2022-12-29 | Fixed plate, polishing device and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115805523A true CN115805523A (en) | 2023-03-17 |
Family
ID=85487090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211707177.6A Pending CN115805523A (en) | 2022-12-29 | 2022-12-29 | Fixed plate, polishing device and polishing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115805523A (en) |
| TW (1) | TW202330173A (en) |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182867A1 (en) * | 2001-06-04 | 2002-12-05 | Multi Planar Technologies, Inc. | Chemical mechanical polishing apparatus and method having a retaining ring with a contoured surface |
| TW200414966A (en) * | 2002-11-11 | 2004-08-16 | Ebara Corp | Polishing apparatus |
| CN1628374A (en) * | 2002-02-07 | 2005-06-15 | 索尼株式会社 | Polishing pad, polishing device, and polishing method |
| TW200714411A (en) * | 2005-07-25 | 2007-04-16 | Hoya Corp | Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask |
| KR20080041408A (en) * | 2006-11-07 | 2008-05-13 | 삼성전자주식회사 | Chemical mechanical polishing apparatus and method |
| CN101257996A (en) * | 2005-09-06 | 2008-09-03 | 飞思卡尔半导体公司 | Grooved platen with channels or pathway to ambient air |
| CN101342679A (en) * | 2008-08-19 | 2009-01-14 | 清华大学 | Polishing head for chemico-mechanical polishing |
| CN201960452U (en) * | 2010-12-02 | 2011-09-07 | 北京有色金属研究总院 | Pressure ring device of polishing machine |
| CN203680027U (en) * | 2013-12-17 | 2014-07-02 | 中芯国际集成电路制造(北京)有限公司 | Chemical and mechanical grinding device |
| CN206519831U (en) * | 2017-01-26 | 2017-09-26 | 安徽三安光电有限公司 | A kind of chip carrying disk |
| CN109562506A (en) * | 2017-02-06 | 2019-04-02 | 株式会社大辉 | The recess portion forming method and polishing pad of polishing pad |
| CN111251177A (en) * | 2020-03-10 | 2020-06-09 | 北京烁科精微电子装备有限公司 | Bearing head and polishing device with same |
| CN211220218U (en) * | 2019-12-20 | 2020-08-11 | 西安奕斯伟硅片技术有限公司 | Double-side polishing device |
| CN111941251A (en) * | 2020-07-08 | 2020-11-17 | 上海新昇半导体科技有限公司 | Polishing pad, polishing equipment and polishing method of silicon wafer |
| CN116061083A (en) * | 2021-10-29 | 2023-05-05 | 华海清科股份有限公司 | Chemical mechanical polishing device and polishing method |
-
2022
- 2022-12-29 CN CN202211707177.6A patent/CN115805523A/en active Pending
-
2023
- 2023-02-18 TW TW112105936A patent/TW202330173A/en unknown
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182867A1 (en) * | 2001-06-04 | 2002-12-05 | Multi Planar Technologies, Inc. | Chemical mechanical polishing apparatus and method having a retaining ring with a contoured surface |
| CN1628374A (en) * | 2002-02-07 | 2005-06-15 | 索尼株式会社 | Polishing pad, polishing device, and polishing method |
| TW200414966A (en) * | 2002-11-11 | 2004-08-16 | Ebara Corp | Polishing apparatus |
| TW200714411A (en) * | 2005-07-25 | 2007-04-16 | Hoya Corp | Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask |
| CN101257996A (en) * | 2005-09-06 | 2008-09-03 | 飞思卡尔半导体公司 | Grooved platen with channels or pathway to ambient air |
| KR20080041408A (en) * | 2006-11-07 | 2008-05-13 | 삼성전자주식회사 | Chemical mechanical polishing apparatus and method |
| CN101342679A (en) * | 2008-08-19 | 2009-01-14 | 清华大学 | Polishing head for chemico-mechanical polishing |
| CN201960452U (en) * | 2010-12-02 | 2011-09-07 | 北京有色金属研究总院 | Pressure ring device of polishing machine |
| CN203680027U (en) * | 2013-12-17 | 2014-07-02 | 中芯国际集成电路制造(北京)有限公司 | Chemical and mechanical grinding device |
| CN206519831U (en) * | 2017-01-26 | 2017-09-26 | 安徽三安光电有限公司 | A kind of chip carrying disk |
| CN109562506A (en) * | 2017-02-06 | 2019-04-02 | 株式会社大辉 | The recess portion forming method and polishing pad of polishing pad |
| CN211220218U (en) * | 2019-12-20 | 2020-08-11 | 西安奕斯伟硅片技术有限公司 | Double-side polishing device |
| CN111251177A (en) * | 2020-03-10 | 2020-06-09 | 北京烁科精微电子装备有限公司 | Bearing head and polishing device with same |
| CN111941251A (en) * | 2020-07-08 | 2020-11-17 | 上海新昇半导体科技有限公司 | Polishing pad, polishing equipment and polishing method of silicon wafer |
| CN116061083A (en) * | 2021-10-29 | 2023-05-05 | 华海清科股份有限公司 | Chemical mechanical polishing device and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202330173A (en) | 2023-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6220944B1 (en) | Carrier head to apply pressure to and retain a substrate | |
| US9327382B2 (en) | Carrier for a double-side polishing apparatus, double-side polishing apparatus using this carrier, and double-side polishing method | |
| CN107431006B (en) | Single-wafer single-side polishing method and single-wafer single-side polishing apparatus for semiconductor wafer | |
| JPH09321001A (en) | Method for polishing semiconductor wafer | |
| US8323075B2 (en) | Polishing head, polishing apparatus and method for demounting workpiece | |
| US7090567B2 (en) | Method and an element for surface polishing | |
| JP2007012918A (en) | Polishing head | |
| KR102523271B1 (en) | polishing pad, polishing apparatus and a method for polishing silicon wafer | |
| KR20160071366A (en) | Dressing device for polishing-use foamed urethane pad | |
| CN115805523A (en) | Fixed plate, polishing device and polishing method | |
| JPH11254305A (en) | Both side polishing method for wafer and wafer carrier used for polishing method | |
| US6358117B1 (en) | Processing method for a wafer | |
| KR20050013436A (en) | Chemical mechanical polishing apparatus having insert pad for forming local step | |
| JP2001358098A (en) | Polishing head of chemical/mechanical polishing device | |
| JP3817771B2 (en) | Polishing method of synthetic quartz glass substrate | |
| EP1542267B1 (en) | Method and apparatus for polishing wafer | |
| KR102592009B1 (en) | Manufacturing method of polishing head, polishing device and semiconductor wafer | |
| TWI840128B (en) | Setting plate, polishing equipment and polishing method | |
| KR100722967B1 (en) | Double side polishing apparatus | |
| JP2000215429A (en) | Method and jig for grinding magnetic head slider | |
| KR20150111044A (en) | Retainer ring for using cmp head | |
| JP4169432B2 (en) | Workpiece holder, polishing apparatus, and polishing method | |
| US20230201994A1 (en) | Polishing head assembly having recess and cap | |
| JP2002331453A (en) | Wafer polishing method and wafer polishing device | |
| WO2021002089A1 (en) | Polishing pad, polishing device, polishing method using same, and method for manufacturing polishing pad |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |