CN101342679A - Polishing head for chemico-mechanical polishing - Google Patents
Polishing head for chemico-mechanical polishing Download PDFInfo
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- CN101342679A CN101342679A CNA2008101187043A CN200810118704A CN101342679A CN 101342679 A CN101342679 A CN 101342679A CN A2008101187043 A CNA2008101187043 A CN A2008101187043A CN 200810118704 A CN200810118704 A CN 200810118704A CN 101342679 A CN101342679 A CN 101342679A
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- retaining ring
- barrier film
- rubbing head
- pedestal
- mechanical polishing
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Abstract
The present invention discloses a polishing head used for chemical mechanical polishing. The polishing head comprises a pedestal with an annular groove at the underside edge area, a retaining ring membrane which is fixed under the pedestal and forms a retaining ring chamber with the annular groove, a retaining ring which is floated under the retaining ring chamber by the retaining chamber membrane which is provided with a bag area which is arranged just under the pedestal and is used for containing a wafer, and a multiple-chamber membrane which is provided with a circular plane and is assembled with a plurality of concentric annular ribs. The circular plan, the concentric annular ribs and the lower surface of the pedestal form a plurality of mutually independent concentric annular chambers. During the polishing process, the polishing head can apply different lower pressures on different areas at the back of the wafer by the concentric annular chambers, so as to obtain good uniformity.
Description
Technical field
The present invention relates to the ic manufacturing technology field, particularly relate to a kind of rubbing head that is used for chemically mechanical polishing.
Background technology
In the manufacture process of integrated circuit and since characteristic size constantly dwindle continuous increase with the metal interconnected number of plies, the depth of focus of graph exposure becomes more and more littler.Realize multilayer wiring, crystal column surface must have very high uniformity, and CMP (Chemical-MechanicalPolish, chemically mechanical polishing) technology is the most effective at present overall planarization.
The CMP technology is by the rubbing head clamping with polished wafer, and it is pressed on the polishing pad with certain pressure, in polishing process, rubbing head drives wafer and rotates along rotating shaft, polishing pad is then along another rotating shaft rotation, the polishing fluid of being made up of abrasive particle and chemical solution flows between wafer and polishing pad, by the having an even surface of acting in conjunction realization of chemistry and machinery.In polishing process, rubbing head plays a part the clamping wafer and its dorsal part is applied downforce (downforce), is the key point that realizes having an even surface.
In existing C MP technology, the known heterogeneity that has multiple reason can cause crystal column surface.These reasons comprise: the downforce that is applied to wafer backside is inhomogeneous, the edge effect that causes in crystal round fringes zone and the typical effect difference that occurs in the central area because of polishing pad, the non-homogeneous deposition of metal/oxide layer etc.Up to now, still do not achieve success for addressing these problems the effort of being done simultaneously.
Meanwhile, along with constantly dwindling of characteristic size, postpone in order to reduce RC (capacitance-resistance), the introducing of copper-connection and low-k materials has become inevitable.And the loose structure of low-k materials makes its mechanical performance become very poor, and the conventional downforce (2.0-6.0psi) in the CMP process can't meet the demands, the low downforce of necessary employing (＜2.0psi), this just need improve accordingly to rubbing head.
Summary of the invention
The problem that the embodiment of the invention will solve provides a kind of rubbing head that is used for chemically mechanical polishing, obtains uniformity preferably in the polishing process to be implemented in.
For achieving the above object, the technical scheme of the embodiment of the invention provides a kind of rubbing head that is used for chemically mechanical polishing, and described rubbing head comprises:
Pedestal, there is annular recess in described pedestal lower edge zone;
The retaining ring barrier film is fixed on the below of described pedestal, forms the retaining ring chamber with described annular recess;
Retaining ring floats on the below of described retaining ring chamber by described retaining ring barrier film, and described retaining ring is provided with pocket area under described pedestal, be used for holding wafer;
Multi-cavity chamber barrier film, described multi-cavity chamber barrier film has the plate-like plane, is integrated with a plurality of concentric circular ribs on it, and the lower surface of described plate-like plane, concentric circular ribs and described pedestal forms a plurality of separate concentric annular chambers.
Wherein, described retaining ring chamber housing has gas or liquid, and the pressure of described gas or liquid is passed to described retaining ring by described retaining ring barrier film, forms downforce.
Wherein, described a plurality of separate concentric annular chamber housing have gas or liquid, and the pressure of described gas or liquid is passed to wafer by described multi-cavity chamber barrier film, form downforce.
Wherein, the gas in the described retaining ring chamber or the pressure of liquid can be regulated.
Wherein, the gas in described a plurality of separate concentric annular chamber or the pressure of liquid can be regulated respectively.
Wherein, the end of described concentric circular ribs has the annular plate perpendicular to described concentric circular ribs, is used for fixing with described pedestal.
Wherein, described a plurality of separate concentric annular chamber is 3-5.
Wherein, the material of described retaining ring barrier film and multi-cavity chamber barrier film is an elastomeric material, and described elastomeric material comprises fluorubber, silicon rubber or polyurethane rubber.
Wherein, the fixed form of the fixed form of described retaining ring barrier film and described pedestal and described multi-cavity chamber barrier film and described pedestal is for adopting the mode of stickup and/or mechanical connection.
Wherein, the bottom of described retaining ring have a plurality ofly radially get through, equally distributed groove, described groove is used for entering/passing away in polishing process liquid and grinding.
Compared with prior art, technical scheme of the present invention has following advantage:
The embodiment of the invention is in polishing process, this rubbing head can be according to the downforce of multi-cavity chamber barrier film regulating action zones of different on wafer, can be according to the downforce of retaining ring barrier film regulating action on retaining ring, the design of multi-cavity chamber barrier film and retaining ring barrier film simultaneously can realize low downforce pressure polishing, therefore can improve the planarization effect of crystal column surface.
Description of drawings
Fig. 1 is the cross-sectional view of a kind of rubbing head of the embodiment of the invention;
Fig. 2 is another cross-sectional view of a kind of rubbing head of the embodiment of the invention;
Fig. 3 is the cross-sectional view of a kind of retaining ring of the embodiment of the invention;
Fig. 4 is the elevational schematic view of a kind of retaining ring of the embodiment of the invention;
Fig. 5 is the cross-sectional view of a kind of multi-cavity chamber barrier film of the embodiment of the invention;
Fig. 6 is the schematic top plan view of a kind of multi-cavity chamber barrier film of the embodiment of the invention.
The specific embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Fig. 1 and Fig. 2 are the cross-sectional view of rubbing head 100 according to the preferred embodiment of the invention.Rubbing head 100 comprises a upper shell 10, a pedestal 20, a retaining ring barrier film 30, a retaining ring 40 and a multi-cavity chamber barrier film 50.
Retaining ring barrier film 30 is annular membranes, and it covers on the annular recess of pedestal 20 fully, and utilizes that to clamp down on ring 74,75 fixing, thereby forms retaining ring chamber 66.Retaining ring barrier film 30 adopts the mode of stickups or mechanical connection or the two and usefulness to fix by clamping down on ring 74,75.Consider its design feature and work condition environment, the material of retaining ring barrier film 30 should be fluorubber, silicon rubber or polyurethane rubber elastomeric material, and thickness is 0.2-3mm.
Retaining ring 40 is an annular plate, it is connected with retaining ring barrier film 30 by certain mode, and float on the below of retaining ring chamber 66 via retaining ring barrier film 30, thus under pedestal 20, defining a pocket zone, its size is used for holding wafer 200 just.In polishing process, the interior ring surface interlock wafer 200 of retaining ring 40 skids off from rubbing head 100 bottoms to avoid wafer 200.In polishing process, retaining ring 40 directly contacts with polishing pad 200, its wearing and tearing, corrosion situation are very serious, therefore retaining ring 40 should be selected intensity height, good springiness, wear-resistant, corrosion-resistant, material that temperature deformation is little for use, PPS (Polyphenylene Sulfide polyphenylene sulfide), PEEK engineering plastics such as (Poly Ether Ether Ketone, polyether-ether-ketones) are its preferable selection.
See Fig. 3 and Fig. 4, a circular step 41 is arranged at the top of retaining ring 40, and retaining ring 40 is fixing by the upper surface and the retaining ring barrier film 30 of circular step 41, thereby has guaranteed that retaining ring 40 has enough floating spaces.The bottom of retaining ring 40 have a plurality ofly radially get through, equally distributed groove 42, groove 42 enters/passing away as liquid in polishing process and grinding.The degree of depth of groove 42 is between 2-5mm, and quantity is advisable between 6-12.
Get back to Fig. 1 and Fig. 2, multi-cavity chamber barrier film 50 is in the form of annular discs, is integrated with a plurality of concentric circular ribs on it.Multi-cavity chamber barrier film 50 has formed a plurality of separate concentric annular chambers 61,62,63,64,65 with the lower surface of pedestal 20.In polishing process, the lower surface of multi-cavity chamber barrier film 50 contacts with the dorsal part of wafer 200, and applies gas or fluid pressure by 61,62,63,64,65 pairs of wafer backside of a plurality of separate concentric annular chambers, forms downforce.For the wafer of 200mm specification, the concentric annular chamber is good with 3, and for the wafer of 300mm specification, the concentric annular chamber is good with 5.Concentric annular chamber in the preferred embodiment is 5.
See Fig. 5 and Fig. 6, be integrated with 5 concentric circular ribs 51,52,53,54,55 on the discoid plane of multi-cavity chamber barrier film 50, the end of these concentric circular ribs has annular plate 51a, 52a, 53a, 54a, a 55a perpendicular to this concentric circular ribs respectively.By these annular plates and clamp down on ring 71,72,73, multi-cavity chamber barrier film 50 adopts the mode of stickups or mechanical connection or the two and usefulness to be fixed on the pedestal 20, forms a plurality of separate concentric annular chambers 61,62,63,64,65.Consider its design feature and work condition environment, the material of multi-cavity chamber barrier film 50 should be fluorubber, silicon rubber or polyurethane rubber elastomeric material, and thickness is 0.2-3mm.
Get back to Fig. 1 and Fig. 2, according to a preferred embodiment of the invention, have through holes such as 61a, 62a, 63a, 64a, 65a, 66a on the pedestal 20, be used for feeding gas or liquid, thereby wafer 200 and retaining ring 40 are applied downforce to concentric annular chamber 61,62,63,64,65 and retaining ring chamber 66.The size that change to feed gas flow or amount of liquid can change the pressure size of different chamber, and then can change and be applied to the pressure size on the respective regions and retaining ring 40 on the wafer 200.
The front is mentioned, and influences one of heteropical principal element of crystal column surface and be the high low head that the non-homogeneous deposition of metal/oxide layer causes crystal column surface to occur.And the design of the multi-cavity chamber of this rubbing head can apply different pressure to the zones of different of wafer backside, that is to say, high zone is applied bigger pressure, polishing speed can be faster like this, low zone is applied smaller pressure, polishing speed can be slow like this, just can eliminate the high low head that the non-homogeneous deposition of metal/oxide layer causes since so, makes the crystal column surface after the polishing reach preferable uniformity.Why the design of multi-cavity chamber being concentric annular and distributing, is that mode is carried out because the deposition of preceding working procedure-metal/oxide layer generally adopts spin coating etc., and the high low head that these technologies form often is concentric annular and distributes.
Meanwhile, big I by gas flow or amount of liquid in the change feeding retaining ring chamber 66 changes the downforce that acts on the retaining ring 40, thereby can regulate the compression degree of 40 pairs of polishing pads 300 of retaining ring, improve the edge effect that causes in crystal round fringes typical effect difference regional and that occur in the central area because of polishing pad.
Rubbing head of the present invention can improve the heterogeneity of crystal round fringes; Can regulate the removal profile of crystal column surface material, with the non-homogeneous deposition of the structure sheaf on the compensation wafer; Low downforce pressure polishing can be realized, and then the excellent planarization effect can be obtained.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1, a kind of rubbing head that is used for chemically mechanical polishing is characterized in that, described rubbing head comprises:
Pedestal, there is annular recess in described pedestal lower edge zone;
The retaining ring barrier film is fixed on the below of described pedestal, forms the retaining ring chamber with described annular recess;
Retaining ring floats on the below of described retaining ring chamber by described retaining ring barrier film, and described retaining ring is provided with pocket area under described pedestal, be used for holding wafer;
Multi-cavity chamber barrier film, described multi-cavity chamber barrier film has the plate-like plane, is integrated with a plurality of concentric circular ribs on it, and the lower surface of described plate-like plane, concentric circular ribs and described pedestal forms a plurality of separate concentric annular chambers.
2, the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, described retaining ring chamber housing has gas or liquid, and the pressure of described gas or liquid is passed to described retaining ring by described retaining ring barrier film, forms downforce.
3. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1, it is characterized in that, described a plurality of separate concentric annular chamber housing has gas or liquid, and the pressure of described gas or liquid is passed to wafer by described multi-cavity chamber barrier film, forms downforce.
4. the rubbing head that is used for chemically mechanical polishing as claimed in claim 2 is characterized in that, the gas in the described retaining ring chamber or the pressure of liquid can be regulated.
5. the rubbing head that is used for chemically mechanical polishing as claimed in claim 3 is characterized in that, the gas in described a plurality of separate concentric annular chambers or the pressure of liquid can be regulated respectively.
6. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that the end of described concentric circular ribs has the annular plate perpendicular to described concentric circular ribs, is used for fixing with described pedestal.
7. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, described a plurality of separate concentric annular chambers are 3-5.
8. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the material of described retaining ring barrier film and multi-cavity chamber barrier film is an elastomeric material, and described elastomeric material comprises fluorubber, silicon rubber or polyurethane rubber.
9. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the fixed form of the fixed form of described retaining ring barrier film and described pedestal and described multi-cavity chamber barrier film and described pedestal is for adopting the mode of stickup and/or mechanical connection.
10. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the bottom of described retaining ring have a plurality ofly radially get through, equally distributed groove, described groove is used for entering/passing away in polishing process liquid and grinding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101187043A CN101342679A (en) | 2008-08-19 | 2008-08-19 | Polishing head for chemico-mechanical polishing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101187043A CN101342679A (en) | 2008-08-19 | 2008-08-19 | Polishing head for chemico-mechanical polishing |
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| CN101342679A true CN101342679A (en) | 2009-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101187043A Pending CN101342679A (en) | 2008-08-19 | 2008-08-19 | Polishing head for chemico-mechanical polishing |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101780657A (en) * | 2010-03-25 | 2010-07-21 | 南京航空航天大学 | Polishing loading device capable of uniformly distributing load on surface of loader |
| CN102380820A (en) * | 2010-08-31 | 2012-03-21 | 不二越机械工业株式会社 | Polishing apparatus |
| CN104942697A (en) * | 2014-03-24 | 2015-09-30 | 盛美半导体设备（上海）有限公司 | Wafer grinding head and wafer absorbing method |
| CN106887399A (en) * | 2010-12-20 | 2017-06-23 | Ev 集团 E·索尔纳有限责任公司 | Storing apparatus for keeping chip |
| CN106891244A (en) * | 2017-03-01 | 2017-06-27 | 天津华海清科机电科技有限公司 | Rubbing head |
| CN107756232A (en) * | 2017-11-10 | 2018-03-06 | 北京鼎泰芯源科技发展有限公司 | A kind of wafer polishing apparatus |
| CN107953242A (en) * | 2017-12-22 | 2018-04-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Color-buffing finish device and polishing system |
| CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
| CN112045548A (en) * | 2020-08-24 | 2020-12-08 | 华海清科股份有限公司 | Wafer bearing device for chemical mechanical polishing and chemical mechanical polishing equipment |
| CN114286736A (en) * | 2019-08-27 | 2022-04-05 | 应用材料公司 | Chemical mechanical polishing correction tool |
| CN115151376A (en) * | 2020-07-08 | 2022-10-04 | 应用材料公司 | Multi-tooth magnetic control retaining ring |
| CN115805523A (en) * | 2022-12-29 | 2023-03-17 | 西安奕斯伟材料科技有限公司 | Fixed plate, polishing device and polishing method |
| CN116276624A (en) * | 2023-03-29 | 2023-06-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
-
2008
- 2008-08-19 CN CNA2008101187043A patent/CN101342679A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101780657A (en) * | 2010-03-25 | 2010-07-21 | 南京航空航天大学 | Polishing loading device capable of uniformly distributing load on surface of loader |
| CN101780657B (en) * | 2010-03-25 | 2011-05-11 | 南京航空航天大学 | Polishing loading device capable of uniformly distributing load on surface of loader |
| CN102380820A (en) * | 2010-08-31 | 2012-03-21 | 不二越机械工业株式会社 | Polishing apparatus |
| CN102380820B (en) * | 2010-08-31 | 2015-07-15 | 不二越机械工业株式会社 | Polishing apparatus |
| US10886156B2 (en) | 2010-12-20 | 2021-01-05 | Ev Group E. Thallner Gmbh | Accomodating device for retaining wafers |
| CN106887399A (en) * | 2010-12-20 | 2017-06-23 | Ev 集团 E·索尔纳有限责任公司 | Storing apparatus for keeping chip |
| US11756818B2 (en) | 2010-12-20 | 2023-09-12 | Ev Group E. Thallner Gmbh | Accommodating device for retaining wafers |
| CN106887399B (en) * | 2010-12-20 | 2020-02-21 | Ev 集团 E·索尔纳有限责任公司 | Accommodating device for holding wafers |
| US10325798B2 (en) | 2010-12-20 | 2019-06-18 | Ev Group E. Thallner Gmbh | Accommodating device for retaining wafers |
| US11355374B2 (en) | 2010-12-20 | 2022-06-07 | Ev Group E. Thallner Gmbh | Accommodating device for retaining wafers |
| CN104942697B (en) * | 2014-03-24 | 2019-02-19 | 盛美半导体设备（上海）有限公司 | Grinding wafer head and wafer adsorption method |
| CN104942697A (en) * | 2014-03-24 | 2015-09-30 | 盛美半导体设备（上海）有限公司 | Wafer grinding head and wafer absorbing method |
| CN106891244A (en) * | 2017-03-01 | 2017-06-27 | 天津华海清科机电科技有限公司 | Rubbing head |
| CN107756232A (en) * | 2017-11-10 | 2018-03-06 | 北京鼎泰芯源科技发展有限公司 | A kind of wafer polishing apparatus |
| CN107953242A (en) * | 2017-12-22 | 2018-04-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Color-buffing finish device and polishing system |
| CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
| CN114286736A (en) * | 2019-08-27 | 2022-04-05 | 应用材料公司 | Chemical mechanical polishing correction tool |
| CN115151376A (en) * | 2020-07-08 | 2022-10-04 | 应用材料公司 | Multi-tooth magnetic control retaining ring |
| CN112045548B (en) * | 2020-08-24 | 2022-09-06 | 华海清科股份有限公司 | Wafer bearing device for chemical mechanical polishing and chemical mechanical polishing equipment |
| CN112045548A (en) * | 2020-08-24 | 2020-12-08 | 华海清科股份有限公司 | Wafer bearing device for chemical mechanical polishing and chemical mechanical polishing equipment |
| CN115805523A (en) * | 2022-12-29 | 2023-03-17 | 西安奕斯伟材料科技有限公司 | Fixed plate, polishing device and polishing method |
| CN116276624A (en) * | 2023-03-29 | 2023-06-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
| CN116276624B (en) * | 2023-03-29 | 2024-01-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
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Application publication date: 20090114 |