TWI685896B - Method of manufacturing chemical mechanical polishing pad with internal channels - Google Patents

Method of manufacturing chemical mechanical polishing pad with internal channels Download PDF

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TWI685896B
TWI685896B TW108102132A TW108102132A TWI685896B TW I685896 B TWI685896 B TW I685896B TW 108102132 A TW108102132 A TW 108102132A TW 108102132 A TW108102132 A TW 108102132A TW I685896 B TWI685896 B TW I685896B
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polishing pad
polishing
channels
forming
features
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TW108102132A
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Chinese (zh)
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TW201929088A (en
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傑森G 馮
拉吉菲 巴札
卡錫拉曼 克利許南
馬韓卓C 奧利拉
佛瑞德C 瑞德可
羅素艾德華 派瑞
葛利格瑞E 敏克
丹尼爾 瑞特法德
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美商應用材料股份有限公司
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Priority claimed from US14/695,299 external-priority patent/US9873180B2/en
Priority claimed from US14/695,778 external-priority patent/US20160101500A1/en
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Abstract

A polishing pad for chemical mechanical polishing is provided. The polishing pad includes a base region having a supporting surface. The polishing pad further includes a plurality of polishing features forming a polishing surface, the polishing surface opposing the supporting surface. The polishing pad further includes one or more channels formed in an interior region of the polishing pad and extending at least partly around a center of the polishing pad, wherein each channel is fluidly coupled to at least one port.

Description

具有內部通道的化學機械研磨墊之製造方法 Manufacturing method of chemical mechanical polishing pad with internal channel

本案中揭示之實施例總體上係關於用於化學機械研磨(chemical mechanical polishing;CMP)製程中之研磨製品之製造。更具體而言,本案中揭示之實施例係關於用於CMP製程中之研磨墊,及使用增添製造技術來製造研磨墊之方法。 The embodiments disclosed in this case generally relate to the manufacture of abrasive articles used in chemical mechanical polishing (CMP) processes. More specifically, the embodiments disclosed in this case relate to polishing pads used in CMP processes, and methods of manufacturing polishing pads using additive manufacturing techniques.

化學機械研磨(chemical mechanical polishing;CMP)是在半導體製造工業中用以在積體電路裝置上提供平坦表面之製程,該製程亦被稱作化學機械平面化。請參看第1圖,該圖圖示典型CMP系統100之側剖面視圖。如圖所示之CMP系統100顯示安置於研磨頭102中之基板104。研磨頭102使基板104旋轉,且將基板104壓抵住研磨墊150之研磨表面152。研磨墊150被支撐在平臺106上,該平臺使研磨墊150相對於基板104旋轉。研磨液或漿料自漿料輸送源110被輸送至研磨墊150。漿料影響薄膜或其他材料自基板104上之移除。該種研磨常常用以使諸如氧化矽之絕緣層及/或諸如鎢、鋁,或銅之金屬層平面化,該等層已沉積在基板104上。Chemical mechanical polishing (CMP) is a process used to provide a flat surface on an integrated circuit device in the semiconductor manufacturing industry. This process is also called chemical mechanical planarization. Please refer to FIG. 1, which illustrates a side cross-sectional view of a typical CMP system 100. The CMP system 100 as shown shows the substrate 104 disposed in the polishing head 102. The polishing head 102 rotates the substrate 104 and presses the substrate 104 against the polishing surface 152 of the polishing pad 150. The polishing pad 150 is supported on a platform 106 that rotates the polishing pad 150 relative to the substrate 104. The polishing liquid or slurry is transported from the slurry transport source 110 to the polishing pad 150. The slurry affects the removal of the film or other materials from the substrate 104. This type of grinding is often used to planarize insulating layers such as silicon oxide and/or metal layers such as tungsten, aluminum, or copper, which have been deposited on the substrate 104.

在處理期間,對研磨墊與基板之間的條件(如壓力、溫度及化學作用)之環境控制獲得一致及均勻的研磨結果。常常藉由改變研磨頭施加在與研磨墊相抵之基板上之向下壓力的量,控制研磨期間的壓力。儘管此壓力可改變,但往往難以改變基板中不同部分上之壓力。往往藉由控制周圍空氣之溫度或藉由經由平臺供應冷卻劑以試圖冷卻正在研磨之基板,從而控制研磨期間之溫度。該等間接方法往往不足以對基板中經研磨之表面進行精密的溫度控制。諸如研磨漿料之化學品被頻繁供應至研磨墊頂部,如第1圖中所示。研磨墊中之凹槽可用以將漿料運輸至正在研磨之基板的下側。儘管一些漿料確實到達基板下側,但通常浪費大量漿料,因為該等量之漿料從未到達基板下側。During processing, environmental control of the conditions (such as pressure, temperature, and chemical action) between the polishing pad and the substrate results in consistent and uniform polishing results. The pressure during polishing is often controlled by changing the amount of downward pressure that the polishing head exerts on the substrate against the polishing pad. Although this pressure can be changed, it is often difficult to change the pressure on different parts of the substrate. The temperature during grinding is often controlled by controlling the temperature of the surrounding air or by supplying coolant through the platform to try to cool the substrate being polished. These indirect methods are often not sufficient for precise temperature control of the polished surface in the substrate. Chemicals such as abrasive slurry are frequently supplied to the top of the polishing pad, as shown in Figure 1. The grooves in the polishing pad can be used to transport the slurry to the underside of the substrate being polished. Although some paste does reach the underside of the substrate, a large amount of paste is usually wasted because the same amount of paste never reaches the underside of the substrate.

因此,現需要改良之研磨墊以允許對研磨墊與正在研磨之基板之間條件的溫度、壓力及化學作用進行更有效及精確的控制。Therefore, there is a need for improved polishing pads to allow more effective and precise control of the temperature, pressure, and chemical interactions between the polishing pad and the substrate being polished.

在一個實施例中,提供用於化學機械研磨之研磨墊。研磨墊包括基底區,該基底區具有支撐表面。研磨墊進一步包括複數個研磨特徵,該等研磨形成與支撐表面相對之研磨表面。研磨墊進一步包括形成於研磨墊之內部區域中之一或更多個通道,該一或更多個通道至少部分地圍繞研磨墊之中心延伸,其中每一通道流體耦接至至少一個埠。In one embodiment, a polishing pad for chemical mechanical polishing is provided. The polishing pad includes a base region having a support surface. The polishing pad further includes a plurality of polishing features that form a polishing surface opposite the support surface. The polishing pad further includes one or more channels formed in an inner region of the polishing pad, the one or more channels extending at least partially around the center of the polishing pad, wherein each channel is fluidly coupled to at least one port.

在另一實施例中,提供用於化學機械研磨之研磨墊。研磨墊包括基底區,該基底區具有支撐表面。研磨墊進一步包括複數個研磨特徵,該等研磨形成與支撐表面相對之研磨表面。研磨墊進一步包括形成於研磨墊內部區域中且流體耦接至至少一個埠之氣室。In another embodiment, a polishing pad for chemical mechanical polishing is provided. The polishing pad includes a base region having a support surface. The polishing pad further includes a plurality of polishing features that form a polishing surface opposite the support surface. The polishing pad further includes an air chamber formed in the inner region of the polishing pad and fluidly coupled to the at least one port.

在另一實施例中,提供用於化學機械研磨之研磨裝置。研磨裝置包括平臺、研磨墊及密封件。平臺包括軸及由軸支撐之平臺板。平臺板包括用於支撐研磨墊之安裝表面。平臺進一步包括穿過軸及平臺板而安置的一或更多個導管。研磨墊包括基底區,該基底區具有支撐表面以用於接觸平臺之安裝表面。研磨墊進一步包括複數個研磨特徵,該等研磨特徵形成與支撐表面相對之研磨表面。研磨墊進一步包括一或更多個通道,該等通道形成於研磨墊內部區域中,且圍繞研磨墊之中心延伸至少15度。密封件在平臺之一或更多個導管與研磨墊之一或更多個通道之間產生密封連接。In another embodiment, a grinding device for chemical mechanical grinding is provided. The grinding device includes a platform, a grinding pad and a seal. The platform includes a shaft and a platform plate supported by the shaft. The platform board includes a mounting surface for supporting the polishing pad. The platform further includes one or more conduits disposed through the shaft and platform plate. The polishing pad includes a base area having a support surface for contacting the mounting surface of the platform. The polishing pad further includes a plurality of polishing features that form a polishing surface opposite the support surface. The polishing pad further includes one or more channels formed in the inner region of the polishing pad and extending at least 15 degrees around the center of the polishing pad. The seal creates a sealed connection between one or more conduits of the platform and one or more channels of the polishing pad.

本揭示案之實施例可進一步提供包括複合襯墊主體之研磨墊。複合襯墊主體包括由第一材料或第一材料組成物形成之一或更多個第一特徵,及由第二材料或第二材料組成物形成之一或更多個第二特徵,其中一或更多個第一特徵及一或更多個第二特徵是藉由沉積複數個層而形成的,該等層包括第一材料或第一材料組成物及第二材料或第二材料組成物。The embodiments of the present disclosure may further provide a polishing pad including a composite pad body. The composite gasket body includes one or more first features formed from a first material or a first material composition, and one or more second features formed from a second material or a second material composition, one of which The one or more first features and the one or more second features are formed by depositing a plurality of layers including the first material or the first material composition and the second material or the second material composition .

本揭示案大體係關於用於化學機械研磨(chemical mechanical polishing; CMP)製程中之研磨製品之製造。更具體而言,本案中揭示之實施例係關於用於CMP製程中之研磨墊,及藉由使用諸如3D列印之增添製造技術來製造研磨墊之方法。第2-8B圖描述可利用3D列印製程而形成之研磨墊之不同實施例,該3D列印製程藉由參考第10圖及第11圖而進行描述。The general system of the present disclosure relates to the manufacture of abrasive products used in chemical mechanical polishing (CMP) processes. More specifically, the embodiments disclosed in this case relate to polishing pads used in CMP processes and methods of manufacturing polishing pads by using additive manufacturing techniques such as 3D printing. FIGS. 2-8B describe different embodiments of polishing pads that can be formed using a 3D printing process, which is described by referring to FIGS. 10 and 11.

第2圖是根據一個實施例之研磨裝置200之側剖面視圖。研磨裝置200包括平臺210及研磨墊250。平臺210包括軸214及由軸214支撐之平臺板216。平臺板216包括安裝表面218以用於支撐研磨墊250。平臺210進一步包括第一導管211及第二導管212以用於將流體運輸至研磨墊250及/或自研磨墊250運輸流體。每一導管211、212經分佈穿過軸214及平臺板216。在一些實施例中,一或更多個導管可經分佈穿過軸及平臺板。不同導管可運輸相同流體或不同流體,如研磨漿料、表面活性劑、去離子水、溶劑、混合物,或其他流體。導管211、212可經分佈穿過密封表面232之各個開口221、222,或平臺210之另一表面,如面對研磨墊250之另一表面,如安裝表面218。FIG. 2 is a side sectional view of the polishing apparatus 200 according to an embodiment. The polishing device 200 includes a platform 210 and a polishing pad 250. The platform 210 includes a shaft 214 and a platform plate 216 supported by the shaft 214. The platform plate 216 includes a mounting surface 218 for supporting the polishing pad 250. The platform 210 further includes a first conduit 211 and a second conduit 212 for transporting fluid to and/or from the polishing pad 250. Each conduit 211, 212 is distributed through the shaft 214 and the platform plate 216. In some embodiments, one or more catheters may be distributed through the shaft and platform plate. Different conduits can transport the same fluid or different fluids, such as abrasive slurry, surfactants, deionized water, solvents, mixtures, or other fluids. The ducts 211, 212 may be distributed through each opening 221, 222 of the sealing surface 232, or another surface of the platform 210, such as the other surface facing the polishing pad 250, such as the mounting surface 218.

研磨墊250包括基底區260,該基底區260具有支撐表面254,該支撐表面254接觸平臺210之安裝表面218。研磨墊250進一步包括研磨區域,該研磨區域包括形成研磨表面274之複數個研磨特徵271。研磨表面274與支撐表面254相對。The polishing pad 250 includes a base area 260 having a support surface 254 that contacts the mounting surface 218 of the platform 210. The polishing pad 250 further includes a polishing area that includes a plurality of polishing features 271 that form the polishing surface 274. The abrasive surface 274 is opposite to the support surface 254.

研磨墊250及下文中論述之其他研磨墊可由聚合物形成,如聚胺甲酸酯、聚胺甲酸酯-丙烯酸酯、環氧樹脂、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯胺、聚酯、耐龍、聚苯碸(polyphenylsulfone; PPS)、聚醚酮(polyetherketone; PEEK)、聚乙烯醇、聚乙酸乙烯酯、聚氯乙烯、聚碳酸酯、聚醯胺,或上述各者之共聚物及摻合物,以及光聚合物丙烯酸酯單體及寡聚物,如聚胺甲酸酯丙烯酸酯、聚酯丙烯酸酯,及環氧乙酸酯。基底區260及研磨區域270可由相同或不同材料形成。例如,在一些實施例中,基底區260可由多晶矽形成,而研磨區域270可由聚胺甲酸酯形成。研磨區域可具有約40肖氏A等級與約90肖氏D等級之間的硬度,如約50肖氏D等級之硬度。研磨區域270可具有約15密耳與約80密耳之間的厚度,如約50密耳。研磨特徵271在平行於研磨表面之平面中可具有約50微米與約5000微米之間的尺寸,如約150微米。研磨特徵可具有紋理化之研磨表面,該表面具有粗糙特徵,該等特徵具有約1微米與約10微米之間的尺寸,如約2微米。研磨特徵271可覆蓋研磨墊250之總水平表面面積中約15%與約90%之間的面積。研磨特徵之間的間隙277可在約2.5毫米與下至約100微米之間,如300微米。研磨特徵271之高度可在約0.1毫米至約1.5毫米之間,如約0.5毫米。基底區260可比研磨區域270更軟或更硬。基底區260之厚度可比研磨區域270之厚度厚、薄或相同厚度。除非另行指定,否則此段中論述之研磨墊250之尺寸及特性適用於下文中論述之全部研磨墊。The polishing pad 250 and other polishing pads discussed below may be formed of polymers, such as polyurethane, polyurethane-acrylate, epoxy resin, acrylonitrile butadiene styrene (ABS) , Polyetheramide, polyester, nylon, polyphenylsulfone (PPS), polyetherketone (PEEK), polyvinyl alcohol, polyvinyl acetate, polyvinyl chloride, polycarbonate, polyamide , Or copolymers and blends of the above, and photopolymer acrylate monomers and oligomers, such as polyurethane acrylate, polyester acrylate, and epoxy acetate. The base region 260 and the polishing region 270 may be formed of the same or different materials. For example, in some embodiments, the base region 260 may be formed of polysilicon, and the polishing region 270 may be formed of polyurethane. The abrasive area may have a hardness between about 40 Shore A grade and about 90 Shore D grade, such as about 50 Shore D grade hardness. The abrasive region 270 may have a thickness between about 15 mils and about 80 mils, such as about 50 mils. The abrasive feature 271 may have a size between about 50 microns and about 5000 microns in a plane parallel to the abrasive surface, such as about 150 microns. The abrasive features may have a textured abrasive surface with rough features, the features having a size between about 1 micron and about 10 microns, such as about 2 microns. The abrasive feature 271 may cover an area between about 15% and about 90% of the total horizontal surface area of the abrasive pad 250. The gap 277 between the abrasive features may be between about 2.5 mm and down to about 100 microns, such as 300 microns. The height of the abrasive feature 271 may be between about 0.1 mm and about 1.5 mm, such as about 0.5 mm. The base region 260 may be softer or harder than the grinding region 270. The thickness of the base region 260 may be thicker, thinner, or the same thickness than the thickness of the polishing region 270. Unless otherwise specified, the dimensions and characteristics of the polishing pad 250 discussed in this paragraph apply to all polishing pads discussed below.

研磨墊250進一步包括形成於研磨墊250內部區域中之第一通道251及第二通道252。第一通道251及第二通道252可圍繞研磨墊250之中心257而至少部分地延伸。例如,在一些實施例中,第一通道251及第二通道252可圍繞研磨墊250之中心257而延伸至少15度。在一些實施例中,第一通道251及第二通道252可圍繞研磨墊250之中心257而完全延伸(亦即360度)。通道251、252端接各個埠241、242處。埠241、242可形成於研磨墊250之支撐表面254中或另一表面中,如面對平臺210之另一表面。在一些實施例中,研磨墊可在研磨墊之一側面包括一或更多個埠,如垂直於支撐表面254之側面。The polishing pad 250 further includes a first channel 251 and a second channel 252 formed in the inner region of the polishing pad 250. The first channel 251 and the second channel 252 may at least partially extend around the center 257 of the polishing pad 250. For example, in some embodiments, the first channel 251 and the second channel 252 may extend at least 15 degrees around the center 257 of the polishing pad 250. In some embodiments, the first channel 251 and the second channel 252 may fully extend around the center 257 of the polishing pad 250 (that is, 360 degrees). The channels 251 and 252 terminate at the ports 241 and 242. The ports 241 and 242 may be formed in the supporting surface 254 of the polishing pad 250 or another surface, such as the other surface facing the platform 210. In some embodiments, the polishing pad may include one or more ports on one side of the polishing pad, such as a side perpendicular to the support surface 254.

在一些實施例中,研磨墊可包含形成於研磨墊之內部區域中之一或更多個通道(如100個通道),該一或更多個通道之每一者可圍繞研磨墊之中心至少部分地延伸。一或更多個通道中之每一者可流體耦接至至少一個埠。In some embodiments, the polishing pad may include one or more channels (eg, 100 channels) formed in the inner region of the polishing pad, each of the one or more channels may surround at least the center of the polishing pad Partially extended. Each of the one or more channels may be fluidly coupled to at least one port.

研磨裝置200進一步包括密封件230,該密封件230在第一導管211與第一通道251之間產生密封連接,且在第二導管212與第二通道252之間產生密封連接。密封件230可與平臺210上之各個開口221、222及研磨墊250之各個埠241、242介接。在一些實施例中,密封件230可在平臺之一或更多個導管與研磨墊之一或更多個通道之間產生密封連接。The grinding device 200 further includes a seal 230 that creates a sealed connection between the first conduit 211 and the first channel 251 and a sealed connection between the second conduit 212 and the second channel 252. The sealing member 230 can interface with each opening 221 and 222 on the platform 210 and each port 241 and 242 of the polishing pad 250. In some embodiments, the seal 230 may create a sealed connection between one or more conduits of the platform and one or more channels of the polishing pad.

以下實施例提供具有內部通道之研磨墊可如何用以改良研磨製程結果、改良所有權的成本,及降低研磨製程可消耗成本之實例。具有內部通道之研磨墊可使用諸如3D列印之增添製造技術製造。下文中之第10圖及第11圖描述使用3D列印製造具有內部通道之研磨墊之製程。The following embodiments provide examples of how a polishing pad with internal channels can be used to improve the results of the polishing process, improve the cost of ownership, and reduce the cost that can be consumed by the polishing process. Abrasive pads with internal channels can be manufactured using additive manufacturing techniques such as 3D printing. Figures 10 and 11 below describe the process of using 3D printing to manufacture polishing pads with internal channels.

第3A圖是一俯視平面圖,該圖圖示根據一個實施例之研磨墊350之內部通道佈局。第3B圖是研磨裝置300之側剖面視圖,該研磨裝置300包括第3A圖之研磨墊350。研磨裝置300進一步包括平臺310及密封件330。研磨墊350包括氣室355、內部通道351,及外部通道352,上述各者中每一者可連接至形成於平臺310中之不同導管,此配置將在下文中進一步詳細論述。該等獨立連接可耦接至諸如壓縮空氣源之高壓源380,以允許個別地控制氣室355、內部通道351,及外部通道352內側之壓力。FIG. 3A is a top plan view illustrating the internal channel layout of the polishing pad 350 according to an embodiment. FIG. 3B is a side cross-sectional view of the polishing apparatus 300, which includes the polishing pad 350 of FIG. 3A. The grinding device 300 further includes a platform 310 and a seal 330. The polishing pad 350 includes an air chamber 355, an internal channel 351, and an external channel 352, each of which may be connected to a different conduit formed in the platform 310, this configuration will be discussed in further detail below. These independent connections may be coupled to a high-pressure source 380, such as a compressed air source, to allow individual control of the pressure inside the gas chamber 355, the internal passage 351, and the external passage 352.

氣室355形成於研磨墊350之內部區域中。氣室355流體耦接至埠345,該埠允許穿過密封件330與平臺310之導管315進行流體連接。內部通道351流體耦接至埠341,該埠允許穿過密封件330與平臺310之導管311進行流體連接。外部通道352流體耦接至埠342,從而允許穿過密封件330與平臺310之導管312進行流體連接。氣室355大體上由內部通道351圍繞。內部通道351大體上由外部通道352圍繞。在一些實施例中,每一通道351、352可至少部分地圍繞(例如15度)研磨墊350之中心357而延伸。通道351、352中至少兩者分別流體耦接至單獨的埠,如埠341、342。通道351、352中之至少兩者流體耦接至導管311、312中之單個導管。儘管第3A圖中圖示一窄線,該窄線分隔通道351與352,且將氣室355與通道351、352隔開,但在一些實施例中,通道351、352彼此之間及與氣室355之間的分隔可大於通道351、352之寬度。The air chamber 355 is formed in the inner area of the polishing pad 350. The gas chamber 355 is fluidly coupled to the port 345, which allows fluid connection with the conduit 315 of the platform 310 through the seal 330. The internal channel 351 is fluidly coupled to the port 341 which allows fluid connection with the conduit 311 of the platform 310 through the seal 330. The external channel 352 is fluidly coupled to the port 342, thereby allowing fluid connection with the conduit 312 of the platform 310 through the seal 330. The air chamber 355 is generally surrounded by the internal passage 351. The inner channel 351 is generally surrounded by the outer channel 352. In some embodiments, each channel 351, 352 may extend at least partially around (eg, 15 degrees) the center 357 of the polishing pad 350. At least two of the channels 351 and 352 are fluidly coupled to separate ports, such as ports 341 and 342, respectively. At least two of the channels 351, 352 are fluidly coupled to a single one of the conduits 311, 312. Although FIG. 3A illustrates a narrow line that separates the channels 351 and 352 and separates the gas chamber 355 from the channels 351, 352, in some embodiments, the channels 351, 352 are separated from each other and The separation between the chambers 355 may be greater than the width of the channels 351,352.

氣室355可安置在氣室研磨特徵375鄰近處,如在氣室研磨特徵375下方。內部通道351可安置在內部研磨特徵371鄰近處,如在內部研磨特徵371下方。外部通道352可安置在外部研磨特徵372鄰近處,如在外部研磨特徵372下方。在操作期間,氣室355、內部通道351,及外部通道352可在不同壓力下增壓,如利用不同的流體壓力(例如空氣壓力)而增壓。向氣室355及通道351、352相對於彼此施加更多或更少壓力可提供優勢,如在CMP製程期間減輕中心至邊緣的不均勻性並調整基板中研磨表面之長距及短距平面化。在一些配置中,提供至氣室及通道中一或更多者之壓力及/或流體類型可用以調整研磨墊之動態特性,且由此影響研磨製程之結果。可經調整之兩個常見CMP墊動態特性是損失模數及儲存模數。在習知應用中,CMP墊之動態特性僅可藉由調整材料組成及/或襯墊形成製程變數以改變所形成襯墊之材料特性而修正。CMP墊之儲存模數特性表示材料中彈性部分之模數。因此,儲存模數是儲存在材料中之能量的度量,且在襯墊於正在研磨之基板下方經過之每一週期恢復。反之,損失模數涉及襯墊材料或在此情況下為襯墊堆疊之黏稠性質或特性。損失模數是由於襯墊在研磨期間之週期性形變而隨熱而散逸之能量的度量。損失模數與儲存模數之比率定義為損耗角正切(δ)且表示材料散逸能量之能力。調整襯墊堆疊之儲存模數及損耗模數特性將影響基板之研磨後表面的長距及短距平面化。如下文中將進一步論述,藉由調整壓力及/或安置在氣室及通道內之材料,可調整研磨墊350之動態特性,及由此調整研磨墊350之平面化能力。The air chamber 355 may be disposed adjacent to the air chamber grinding feature 375, such as below the air chamber grinding feature 375. The internal channel 351 may be disposed adjacent to the internal abrasive feature 371, such as below the internal abrasive feature 371. The outer channel 352 may be disposed adjacent to the outer abrasive feature 372, such as below the outer abrasive feature 372. During operation, the air chamber 355, the internal passage 351, and the external passage 352 may be pressurized at different pressures, such as using different fluid pressures (eg, air pressure). Applying more or less pressure to the gas chamber 355 and the channels 351, 352 relative to each other may provide advantages, such as reducing center-to-edge unevenness during the CMP process and adjusting the long and short distance planarization of the polished surface in the substrate . In some configurations, the pressure and/or fluid type provided to one or more of the gas chamber and the channel can be used to adjust the dynamic characteristics of the polishing pad, and thereby affect the results of the polishing process. The two common dynamic characteristics of CMP pads that can be adjusted are loss modulus and storage modulus. In conventional applications, the dynamic characteristics of the CMP pad can only be modified by adjusting the material composition and/or pad formation process variables to change the material characteristics of the formed pad. The storage modulus characteristic of the CMP pad indicates the modulus of the elastic part in the material. Therefore, the storage modulus is a measure of the energy stored in the material and is recovered every cycle when the pad passes under the substrate being polished. Conversely, the loss modulus relates to the gasket material or, in this case, the viscous nature or characteristics of the gasket stack. The loss modulus is a measure of the energy dissipated with heat due to the periodic deformation of the pad during grinding. The ratio of the loss modulus to the storage modulus is defined as the loss tangent (δ) and represents the ability of the material to dissipate energy. Adjusting the storage modulus and loss modulus characteristics of the pad stack will affect the long and short distance planarization of the polished surface of the substrate. As will be discussed further below, by adjusting the pressure and/or the materials disposed in the gas chamber and the channel, the dynamic characteristics of the polishing pad 350, and thus the planarization ability of the polishing pad 350, can be adjusted.

儘管第3A-3B圖中圖示三個壓力區(亦即氣室355及通道351、352),但其他實施例可包括兩個或兩個以上區,如十個區。在一些實施例中,圍繞氣室355及通道351、352之材料可為與研磨墊350之研磨區域或基底區不同的材料,如更軟及/或更可撓的材料。例如,在一些實施例中,研磨墊350之不同部分可全部由聚胺甲酸酯形成,但圍繞氣室355及通道351、352之材料可由比包含研磨墊350中其餘部分之材料更軟的材料製成,以為圍繞氣室355及通道351、352之材料賦能更大可撓性,及/或用於調整研磨墊堆疊之動態特性。在其他實施例中,研磨墊350可全部由相同材料形成。Although three pressure zones (ie, gas chamber 355 and channels 351, 352) are shown in Figures 3A-3B, other embodiments may include two or more zones, such as ten zones. In some embodiments, the material surrounding the gas chamber 355 and the channels 351, 352 may be a different material than the polishing area or base area of the polishing pad 350, such as a softer and/or more flexible material. For example, in some embodiments, the different parts of the polishing pad 350 may be formed entirely of polyurethane, but the material surrounding the air chamber 355 and the channels 351, 352 may be softer than the material containing the remaining part of the polishing pad 350 It is made of materials to provide greater flexibility around the gas chamber 355 and the channels 351 and 352, and/or to adjust the dynamic characteristics of the polishing pad stack. In other embodiments, the polishing pad 350 may all be formed of the same material.

研磨墊350亦可包括一或更多個感測器,如一或更多個壓力感測器或溫度感測器。例如,研磨墊350可包括氣室壓力感測器365、內部通道壓力感測器361,及外部通道壓力感測器362。在一個實例中,壓力感測器可包括應變計類型裝置,該裝置提供用以測定所施加壓力值之信號。氣室壓力感測器365可具有定位在氣室355中的感測表面,以測定氣室355內側之壓力。內部通道壓力感測器361可具有定位在內部通道351中之感測表面,以測定內部通道351內側的壓力。外部通道壓力感測器362可具有定位在外部通道352中的感測表面,以測定外部通道352內側之壓力。壓力感測器365、361、362中之每一者可經由有線或無線連接向控制器25傳達已測定之壓力。控制器25可為任何能夠監測輸入及/或控制輸出之控制器,如任何微處理器、微電腦,或可程式化邏輯控制器。The polishing pad 350 may also include one or more sensors, such as one or more pressure sensors or temperature sensors. For example, the polishing pad 350 may include an air chamber pressure sensor 365, an internal channel pressure sensor 361, and an external channel pressure sensor 362. In one example, the pressure sensor may include a strain gauge type device that provides a signal to determine the applied pressure value. The air chamber pressure sensor 365 may have a sensing surface positioned in the air chamber 355 to measure the pressure inside the air chamber 355. The internal channel pressure sensor 361 may have a sensing surface positioned in the internal channel 351 to measure the pressure inside the internal channel 351. The external channel pressure sensor 362 may have a sensing surface positioned in the external channel 352 to measure the pressure inside the external channel 352. Each of the pressure sensors 365, 361, 362 can communicate the measured pressure to the controller 25 via a wired or wireless connection. The controller 25 may be any controller capable of monitoring input and/or controlling output, such as any microprocessor, microcomputer, or programmable logic controller.

可將諸如控制閥之壓力調節裝置置於高壓源380與氣室355及通道351、352中每一者之間。可將控制閥385置於高壓源380與氣室355之間。可將控制閥381、382分別置於高壓源380與內部通道351之間及高壓源380與外部通道352之間。可將控制閥385、381、382置於遠離平臺310之位置處。控制器25可藉由調整控制閥之位置來控制氣室355及通道351、352內側之壓力。在一個實施例中,控制器25為用於氣室355及通道351、352之每一對壓力感測器及控制閥執行諸如PID迴路之個別反饋迴路。在一些實施例中,可將額外壓力感測器置於研磨墊350中之其他位置,如更靠近密封件330之位置,以提供研磨墊350內側壓力之更多資料。A pressure regulating device such as a control valve may be placed between the high-pressure source 380 and the gas chamber 355 and each of the channels 351, 352. The control valve 385 can be placed between the high-pressure source 380 and the gas chamber 355. The control valves 381, 382 may be placed between the high-pressure source 380 and the internal channel 351 and between the high-pressure source 380 and the external channel 352, respectively. The control valves 385, 381, 382 may be placed away from the platform 310. The controller 25 can control the pressure inside the gas chamber 355 and the channels 351 and 352 by adjusting the position of the control valve. In one embodiment, the controller 25 performs a separate feedback loop, such as a PID loop, for each pair of pressure sensors and control valves for the gas chamber 355 and the channels 351, 352. In some embodiments, additional pressure sensors may be placed at other locations in the polishing pad 350, such as closer to the seal 330, to provide more information on the pressure inside the polishing pad 350.

在一些實施例中,高壓源380是壓縮空氣源,但亦可使用諸如DI水或另一有用流體之其他流體。例如,在一些實施例中,壓縮惰性氣體用作高壓源之流體。In some embodiments, the high-pressure source 380 is a source of compressed air, but other fluids such as DI water or another useful fluid can also be used. For example, in some embodiments, compressed inert gas is used as the fluid for the high-pressure source.

在其他實施例中,非牛頓流體可用作高壓源之流體。可使用之非牛頓流體之實例包括多醣溶液及聚乙二醇溶液,該兩者亦可包括陶瓷粒子。利用非牛頓流體充填研磨墊350之氣室355及通道351、352允許研磨墊350之彈性及阻尼特性得以調整。研磨墊之彈性及阻尼特性測定研磨墊在研磨期間如何回應於應力。例如,彈性過度之研磨墊可能導致「凹陷」,或從正在研磨之表面上移除過多材料之區域。此不當之凹陷導致非平面研磨及可能導致所生產之裝置的不良效能。彈性極低的研磨墊亦可能剛度過大而無法順應待研磨表面的變異,從而導致不良之研磨結果。在一個實例中,形成於半導體基板之表面上之更小特徵(如與尺寸更寬及間隔更寬的溝槽相比,間隔緊密之32奈米線狀特徵)可具有完全不同的研磨特性。因此,非牛頓流體之阻尼特性將賦能所供應之流體在研磨期間吸收能量及應力,從而防止研磨墊與基板之間的過度振動。非牛頓流體之應力及剪切稠化特性導致流體回應於應力而硬化並吸收能量。另一方面,牛頓流體不具有該等應力及剪切稠化特性,由此使得牛頓流體在吸收研磨期間產生之能量及應力時效率更低。In other embodiments, non-Newtonian fluids can be used as the fluid for the high-pressure source. Examples of non-Newtonian fluids that can be used include polysaccharide solutions and polyethylene glycol solutions, both of which can also include ceramic particles. Filling the air chamber 355 and the channels 351, 352 of the polishing pad 350 with non-Newtonian fluid allows the elasticity and damping characteristics of the polishing pad 350 to be adjusted. The elasticity and damping characteristics of the polishing pad determine how the polishing pad responds to stress during polishing. For example, an excessively elastic polishing pad may cause "dents" or areas where too much material is removed from the surface being polished. This improper depression leads to non-planar grinding and may cause poor performance of the produced device. A polishing pad with extremely low elasticity may also be too rigid to conform to the variation of the surface to be polished, resulting in poor polishing results. In one example, smaller features formed on the surface of the semiconductor substrate (such as closely spaced 32-nanometer linear features compared to wider-sized and wider-spaced trenches) can have completely different abrasive characteristics. Therefore, the damping characteristics of the non-Newtonian fluid will enable the supplied fluid to absorb energy and stress during polishing, thereby preventing excessive vibration between the polishing pad and the substrate. The stress and shear thickening properties of non-Newtonian fluids cause fluids to harden and absorb energy in response to stress. On the other hand, Newtonian fluids do not have such stress and shear thickening properties, thereby making Newtonian fluids less efficient in absorbing energy and stresses generated during grinding.

研磨墊350之彈性及阻尼特性(例如研磨墊之動態特性)可藉由變更流體的類型(諸如非牛頓流體)及供應至氣室355及通道351、352之流體的壓力而調整。先前,為了實現不同的彈性及阻尼特性,會使用不同的研磨墊,但目前,可利用不同的流體充填一個襯墊以獲得不同的彈性及阻尼特性。此外,在一些實施例中,可將諸如不同的非牛頓流體之不同流體供應至氣室355或通道351、352中之一或更多者,從而賦能對研磨墊中不同區域的彈性及阻尼特性進行調整,如研磨墊之不同徑向區域。The elasticity and damping characteristics of the polishing pad 350 (such as the dynamic characteristics of the polishing pad) can be adjusted by changing the type of fluid (such as non-Newtonian fluid) and the pressure of the fluid supplied to the gas chamber 355 and the channels 351, 352. Previously, in order to achieve different elasticity and damping characteristics, different polishing pads were used, but at present, different fluids can be used to fill a pad to obtain different elasticity and damping characteristics. Furthermore, in some embodiments, different fluids, such as different non-Newtonian fluids, can be supplied to the air chamber 355 or one or more of the channels 351, 352, thereby imparting elasticity and damping to different areas of the polishing pad The characteristics are adjusted, such as different radial areas of the polishing pad.

第4A圖是一俯視平面圖,該圖圖示根據一個實施例之研磨墊450之內部通道佈局。第4B圖是第4A圖中研磨墊450之局部側剖面視圖。研磨墊450包括第一研磨通道451、第二研磨通道452,及第三研磨通道453。通道451-453各自流體耦接至供應通道461。通道451-453可大體上圍繞研磨墊450之中心457而延伸,如圍繞研磨墊450之中心457延伸360度。FIG. 4A is a top plan view illustrating the internal channel layout of the polishing pad 450 according to an embodiment. FIG. 4B is a partial side sectional view of the polishing pad 450 in FIG. 4A. The polishing pad 450 includes a first polishing channel 451, a second polishing channel 452, and a third polishing channel 453. The channels 451-453 are each fluidly coupled to the supply channel 461. The channels 451-453 may extend substantially around the center 457 of the polishing pad 450, such as 360 degrees around the center 457 of the polishing pad 450.

研磨墊450進一步包括複數個研磨特徵,該等研磨特徵包括可調整的研磨特徵471及固定研磨特徵472。可調整的研磨特徵471可相對於固定研磨特徵472而移動,以使得當諸如空氣壓力之壓力被施加於通道451-453時,可調整的研磨特徵471可延伸經過固定研磨特徵472以研磨基板。當壓力移除時,可調整的研磨特徵471可返回相對於固定研磨特徵472之凹陷位置,以使得固定研磨特徵472可研磨基板。可調整的研磨特徵471可包括第一研磨表面481,且固定研磨特徵可包括第二研磨表面482。第一研磨表面481可具有不同於第二研磨表面482之特性,如具有不同的硬度或紋理。通道451-453中之每一者可安置在至少一些可調整的研磨特徵471之鄰近處,如在可調整的研磨特徵471之下方。例如,可調整的研磨特徵471可沿同心環安置在通道451-453上方。固定研磨特徵472可沿研磨墊中未被同心環佔用之區域而安置,該等同心環安置在通道451-453上方。The polishing pad 450 further includes a plurality of polishing features including adjustable polishing features 471 and fixed polishing features 472. The adjustable grinding feature 471 can be moved relative to the fixed grinding feature 472 so that when pressure such as air pressure is applied to the channels 451-453, the adjustable grinding feature 471 can extend past the fixed grinding feature 472 to grind the substrate. When the pressure is removed, the adjustable grinding feature 471 can return to the recessed position relative to the fixed grinding feature 472 so that the fixed grinding feature 472 can grind the substrate. The adjustable abrasive feature 471 may include a first abrasive surface 481, and the fixed abrasive feature may include a second abrasive surface 482. The first abrasive surface 481 may have different characteristics than the second abrasive surface 482, such as having different hardness or texture. Each of the channels 451-453 may be positioned adjacent to at least some of the adjustable abrasive features 471, such as below the adjustable abrasive features 471. For example, the adjustable abrasive feature 471 may be placed above the channels 451-453 along concentric rings. The fixed abrasive feature 472 may be positioned along the area of the polishing pad that is not occupied by a concentric ring, which is positioned above the channels 451-453.

可調整的研磨特徵471可回應於通道451-453中之壓力變更而移動,如在通道451-453中之壓力升至某個水平以上時延伸經過固定研磨特徵472。可調整的研磨特徵471可具有不同於固定研磨特徵472之特性,如不同的形狀、尺寸、硬度、組成。當通道451-453未增壓時,可調整的研磨特徵471可相對於固定研磨特徵472而凹陷。當通道451-453增壓時,可調整的研磨特徵471可延伸經過固定研磨特徵472。在操作期間,可自一源(諸如經由平臺導管(未圖示))將空氣壓力供應至研磨墊450以增壓供應通道461及通道451-453,從而允許可調整的研磨特徵471延伸經過固定研磨特徵472。Adjustable abrasive feature 471 can move in response to pressure changes in channels 451-453, such as extending past fixed abrasive feature 472 when the pressure in channels 451-453 rises above a certain level. The adjustable abrasive feature 471 may have different characteristics than the fixed abrasive feature 472, such as different shapes, sizes, hardness, composition. When the channels 451-453 are not pressurized, the adjustable grinding feature 471 may be recessed relative to the fixed grinding feature 472. When the channels 451-453 are pressurized, the adjustable grinding feature 471 can extend past the fixed grinding feature 472. During operation, air pressure can be supplied to the polishing pad 450 from a source, such as via a platform conduit (not shown) to pressurize the supply channels 461 and channels 451-453, thereby allowing the adjustable grinding feature 471 to extend past the fixed Grinding features 472.

研磨墊450賦能使用一個研磨墊在不同時間研磨具有不同研磨特徵之基板。例如,如若固定研磨特徵472比可調整的研磨特徵471硬度更大,或具有更粗糙之紋理,則固定研磨特徵472可首先用於進行更粗糙之研磨,然後可增壓通道451-453以允許將可調整的研磨特徵471用於進行更精細的研磨。在一個實施例中,可調整的研磨特徵471可具有約15至約25之間的肖氏D等級硬度(例如約20肖氏D等級硬度),且固定研磨特徵472可具有約50至約70之間的肖氏D等級硬度(例如約60肖氏D等級硬度)。儘管圖中僅圖示圍繞研磨墊450之中心457延伸之三個通道451-453,但亦可能包括兩個或三個以上之通道。儘管圖中僅圖示一個供應通道461,但一些實施例可能包括多個供應通道以允許不同的研磨墊通道接收不同的壓力,接收壓力之方式類似於研磨墊350之通道351、352可能接收不同壓力之方式。獨立供應通道亦可用於具有一組以上可調整的研磨特徵之實施例中。例如,研磨墊可包括第一組可調整的研磨特徵以用於應用中等研磨,且包括第二組可調整的研磨特徵以用於應用更精細之研磨,以及固定研磨特徵以用於應用更粗糙之研磨。在一些實施例中,研磨墊450可包括一或更多個壓力感測器(未圖示),如包括於研磨墊350中之壓力感測器。例如,研磨墊可在通道451-453之一或更多者中包括壓力感測器。The polishing pad 450 enables one polishing pad to polish substrates with different polishing characteristics at different times. For example, if the fixed abrasive feature 472 is harder than the adjustable abrasive feature 471, or has a rougher texture, the fixed abrasive feature 472 can be used for rougher polishing first, and then the channels 451-453 can be pressurized to allow The adjustable grinding feature 471 is used for finer grinding. In one embodiment, the adjustable abrasive feature 471 can have a Shore D hardness of between about 15 to about 25 (eg, about 20 Shore D hardness), and the fixed abrasive feature 472 can have about 50 to about 70 Between Shore D hardness (for example, about 60 Shore D hardness). Although only three channels 451-453 extending around the center 457 of the polishing pad 450 are shown in the figure, two or more channels may be included. Although only one supply channel 461 is shown in the figure, some embodiments may include multiple supply channels to allow different polishing pad channels to receive different pressures in a manner similar to the channels 351, 352 of the polishing pad 350 that may receive different Way of stress. Independent supply channels can also be used in embodiments with more than one set of adjustable grinding characteristics. For example, the polishing pad may include a first set of adjustable polishing features for applying medium polishing, and a second set of adjustable polishing features for applying finer polishing, and a fixed polishing feature for applying coarser polishing Of grinding. In some embodiments, the polishing pad 450 may include one or more pressure sensors (not shown), such as those included in the polishing pad 350. For example, the polishing pad may include a pressure sensor in one or more of the channels 451-453.

在一些實施例中,供應通道461可導向氣室,該氣室可向全部可調整的研磨特徵增壓,而非使用分隔之通道,如通道451-453。氣室可鄰近於大體上全部可調整的研磨特徵471及固定研磨特徵472。具有氣室之研磨墊可藉由在氣室與固定特徵472之間採用額外或不同的材料,來阻止固定特徵472回應於空氣壓力變更而相對於可調整的研磨特徵471移動。例如,可將可撓性更大的材料置於可調整的研磨特徵471與氣室之間,而非置於固定研磨特徵472與氣室之間。In some embodiments, the supply channel 461 can be directed to an air chamber that can pressurize all adjustable grinding features instead of using separate channels, such as channels 451-453. The gas chamber may be adjacent to substantially all adjustable grinding features 471 and fixed grinding features 472. A polishing pad with an air chamber can prevent the fixed feature 472 from moving relative to the adjustable abrasive feature 471 in response to changes in air pressure by using additional or different materials between the air chamber and the fixed feature 472. For example, a more flexible material may be placed between the adjustable grinding feature 471 and the air chamber instead of between the fixed grinding feature 472 and the air chamber.

第5A圖是一俯視平面圖,該圖圖示根據一個實施例之研磨墊550之內部通道佈局。第5B圖是研磨裝置500之側剖面視圖,該研磨裝置500包括第5A圖之研磨墊550。研磨裝置500包括研磨墊550、平臺510,及密封件530,該密封件在研磨墊550與平臺510之間提供密封連接。平臺510包括供應導管511及回流導管512。供應導管511及回流導管512可用以使流體流經研磨墊550。例如,導管511、512可用以使加熱或冷卻流體流經研磨墊550以調整研磨製程溫度,從而調整漿料化學品之活性及/或調整研磨墊之動態特性。FIG. 5A is a top plan view illustrating the internal channel layout of the polishing pad 550 according to one embodiment. FIG. 5B is a side cross-sectional view of the polishing apparatus 500, which includes the polishing pad 550 of FIG. 5A. The polishing device 500 includes a polishing pad 550, a platform 510, and a seal 530, which provides a sealed connection between the polishing pad 550 and the platform 510. The platform 510 includes a supply duct 511 and a return duct 512. The supply duct 511 and the return duct 512 can be used to flow fluid through the polishing pad 550. For example, the conduits 511 and 512 can be used to flow heating or cooling fluid through the polishing pad 550 to adjust the polishing process temperature, thereby adjusting the activity of slurry chemicals and/or adjusting the dynamic characteristics of the polishing pad.

研磨墊550包括複數個通道551-556。儘管第5A圖中圖示一窄線,該窄線分隔通道551-556,但在一些實施例中,通道551-556之相隔距離可大於通道寬度。每一通道551-556可大體上圍繞研磨墊550之中心557,如圍繞研磨墊550之中心557約360度。每一通道551-556鄰近於研磨墊550之研磨特徵571。研磨特徵571之面向外側之表面形成研磨墊550之研磨表面574。每一通道551-556流體耦接至供應通道561及供應埠541,且每一通道551-556亦流體耦接至回流通道562及回流埠542。在一些實施例中,可將不包括通道之外環559包括在研磨墊550中,以為研磨墊550提供額外的結構支撐。The polishing pad 550 includes a plurality of channels 551-556. Although FIG. 5A illustrates a narrow line that separates the channels 551-556, in some embodiments, the distance between the channels 551-556 may be greater than the width of the channel. Each channel 551-556 may substantially surround the center 557 of the polishing pad 550, such as about 360 degrees around the center 557 of the polishing pad 550. Each channel 551-556 is adjacent to the polishing feature 571 of the polishing pad 550. The outwardly facing surface of the polishing feature 571 forms the polishing surface 574 of the polishing pad 550. Each channel 551-556 is fluidly coupled to the supply channel 561 and the supply port 541, and each channel 551-556 is also fluidly coupled to the return channel 562 and the return port 542. In some embodiments, an outer ring 559 that does not include a channel may be included in the polishing pad 550 to provide additional structural support for the polishing pad 550.

供應通道561及回流通道562可大體上自研磨墊550之中心557延伸至最外側通道556之外緣。供應通道561及回流通道562可經安置而彼此鄰近。供應通道561及回流通道562可安置在鄰近於通道551-556之處,如自通道551-556下方耦接至通道551-556。以此排列安置供應通道561、回流通道562及通道551-556,允許流體流經通道551-556以形成圍繞研磨墊550之中心557之大體閉合迴路。阻障層591可用以確保流體在經由回流通道562離開之前圍繞最內側通道551流動。The supply channel 561 and the return channel 562 may extend substantially from the center 557 of the polishing pad 550 to the outer edge of the outermost channel 556. The supply channel 561 and the return channel 562 may be arranged adjacent to each other. The supply channel 561 and the return channel 562 may be disposed adjacent to the channels 551-556, such as being coupled to the channels 551-556 from below the channels 551-556. The supply channels 561, the return channels 562, and the channels 551-556 are arranged in this arrangement, allowing fluid to flow through the channels 551-556 to form a generally closed loop around the center 557 of the polishing pad 550. The barrier layer 591 may be used to ensure that fluid flows around the innermost channel 551 before leaving via the return channel 562.

密封件530在供應導管511與供應通道561之間提供密封連接,且將回流導管512耦接至回流通道562。密封件530可與平臺510上之各個開口521、522及研磨墊550之各個埠541、542對接。每一通道551-556穿過密封件530流體耦接至平臺510之兩個導管511、512。The seal 530 provides a sealed connection between the supply duct 511 and the supply channel 561 and couples the return duct 512 to the return channel 562. The sealing member 530 can be docked with each opening 521 and 522 on the platform 510 and each port 541 and 542 of the polishing pad 550. Each channel 551-556 is fluidly coupled through the seal 530 to the two conduits 511, 512 of the platform 510.

如上所述,在操作期間,諸如冷卻水之加熱或冷卻流體可流經通道551-556以提供對研磨墊550及研磨表面574之溫度控制。在一些實施例中,加熱流體首先在研磨墊中循環以使研磨墊達到規定溫度,然後在研磨期間,冷卻劑可在研磨墊中循環。冷卻劑之流速或溫度可經調整以提供更多或更少冷卻。As described above, during operation, heating or cooling fluid such as cooling water may flow through the channels 551-556 to provide temperature control of the polishing pad 550 and the polishing surface 574. In some embodiments, the heating fluid is first circulated in the polishing pad to bring the polishing pad to a prescribed temperature, and then, during polishing, the coolant can be circulated in the polishing pad. The flow rate or temperature of the coolant can be adjusted to provide more or less cooling.

儘管圖中圖示六個通道551-556,但可能包括更多或更少通道。在一些實施例中,可將諸如鰭狀結構之額外結構置於通道551-556中,以為研磨墊550與冷卻劑之間的熱傳遞提供額外的表面面積。鰭狀結構可從通道551-556側壁中之一或更多者中伸出。在一些實施例中,其他的通道排列可用於熱傳遞。例如,在一個實施例中,通道可圍繞研磨墊中心形成一或更多個迴路,該等迴路盤旋朝向或離開研磨墊之中心。在其他實施例中,通道可圍繞研磨墊中心形成不完整迴路。Although six channels 551-556 are shown in the figure, more or fewer channels may be included. In some embodiments, additional structures such as fin structures can be placed in the channels 551-556 to provide additional surface area for heat transfer between the polishing pad 550 and the coolant. The fin structure may protrude from one or more of the side walls of the channels 551-556. In some embodiments, other channel arrangements may be used for heat transfer. For example, in one embodiment, the channels may form one or more loops around the center of the polishing pad, the loops spiraling toward or away from the center of the polishing pad. In other embodiments, the channel may form an incomplete loop around the center of the polishing pad.

與間接方法(如冷卻平臺)相比,使冷卻劑直接流經研磨墊可提供對研磨表面574之更佳溫度控制。改良之溫度控制使得研磨得以改良,如更均勻的研磨及更一致的研磨速率。Compared to indirect methods (such as cooling platforms), flowing coolant directly through the polishing pad provides better temperature control of the polishing surface 574. The improved temperature control enables improved grinding, such as more uniform grinding and more consistent grinding rate.

第6A圖是一俯視平面圖,該圖圖示根據一個實施例之研磨墊650之內部通道佈局。第6B圖是研磨裝置600之局部側剖面視圖,該研磨裝置600包括第6A圖之研磨墊650。研磨裝置600包括研磨墊650及平臺610。平臺610可包括一個供應導管(在第6B圖之橫剖面中不可見)及多個回流導管621-626。供應導管可直接位於第6A圖中圖示之主供應通道641M下方。供應導管及回流導管621-626可用以使流體流經研磨墊650。例如,供應導管及回流導管621-626可用以使諸如冷卻水之加熱或冷卻流體流經研磨墊650。多個回流導管621-626允許對研磨墊650之不同區域進行獨立的溫度控制。FIG. 6A is a top plan view illustrating the internal channel layout of the polishing pad 650 according to one embodiment. FIG. 6B is a partial side cross-sectional view of the polishing device 600, which includes the polishing pad 650 of FIG. 6A. The polishing device 600 includes a polishing pad 650 and a platform 610. The platform 610 may include a supply duct (not visible in the cross-section of FIG. 6B) and a plurality of return ducts 621-626. The supply duct may be located directly below the main supply channel 641M shown in FIG. 6A. Supply and return conduits 621-626 can be used to flow fluid through the polishing pad 650. For example, supply conduits and return conduits 621-626 may be used to flow heating or cooling fluid, such as cooling water, through the polishing pad 650. Multiple return conduits 621-626 allow independent temperature control of different areas of the polishing pad 650.

研磨墊650包括複數個通道651-656。儘管第6A圖中圖示一窄線,該窄線分隔通道651-656,但在一些實施例中,通道651-656之相隔距離可大於通道寬度。每一通道651-656可大體上圍繞研磨墊650之中心657,如圍繞研磨墊650之中心657約360度。每一通道651-656鄰近於研磨墊650之研磨特徵671。研磨特徵671之面向外側之表面形成研磨墊650之研磨表面674。通道651-656中之每一者流體耦接至共用供應通道641及各個單獨的回流通道651R-656R。供應通道641流體耦接至主供應通道641M及埠(未圖示)。回流通道651R-656R流體耦接至各個埠651P-656P。每一通道651-656經由各別回流通道651R-656R、埠651P-656P並穿過密封件631-636流體耦接至各別獨立導管621-626。在一些實施例中,可將不包括通道之外環659包括在研磨墊650中,以為研磨墊650提供額外的結構支撐。The polishing pad 650 includes a plurality of channels 651-656. Although FIG. 6A illustrates a narrow line that separates the channels 651-656, in some embodiments, the distance between the channels 651-656 may be greater than the channel width. Each channel 651-656 may substantially surround the center 657 of the polishing pad 650, such as about 360 degrees around the center 657 of the polishing pad 650. Each channel 651-656 is adjacent to the polishing feature 671 of the polishing pad 650. The outward-facing surface of the polishing feature 671 forms the polishing surface 674 of the polishing pad 650. Each of the channels 651-656 is fluidly coupled to a common supply channel 641 and individual return channels 651R-656R. The supply channel 641 is fluidly coupled to the main supply channel 641M and the port (not shown). The return channels 651R-656R are fluidly coupled to each port 651P-656P. Each channel 651-656 is fluidly coupled to respective independent conduits 621-626 via respective return channels 651R-656R, ports 651P-656P and through seals 631-636. In some embodiments, an outer ring 659 that does not include a channel may be included in the polishing pad 650 to provide additional structural support for the polishing pad 650.

供應通道641及回流通道651R-656R陣列可大體上自研磨墊650之中心657延伸至最外側通道656之外緣。供應通道641及回流通道651R-656R可安置在鄰近於彼此之處。供應通道641及回流通道651R-656R之陣列可安置在鄰近於通道651-656之處,如在通道651-656之下方。以此排列安置供應通道641、回流通道651R-656R,及通道651-656允許流體流經通道651-656以形成圍繞研磨墊650之中心657之大體閉合迴路。阻障層691可用以確保流體在經由回流通道651R離開之前圍繞最內側之通道651流動。The supply channel 641 and the return channel 651R-656R array may extend substantially from the center 657 of the polishing pad 650 to the outer edge of the outermost channel 656. The supply channel 641 and the return channels 651R-656R may be disposed adjacent to each other. The array of supply channels 641 and return channels 651R-656R may be placed adjacent to the channels 651-656, such as below the channels 651-656. In this arrangement, the supply channels 641, the return channels 651R-656R, and the channels 651-656 allow fluid to flow through the channels 651-656 to form a generally closed loop around the center 657 of the polishing pad 650. The barrier layer 691 may be used to ensure that fluid flows around the innermost channel 651 before leaving via the return channel 651R.

在操作期間,來自冷卻劑供應680之冷卻劑可使用一或更多個泵(未圖示)流經通道651-656,以提供對研磨墊650及研磨表面674之溫度控制。將個別回流通道651R-656R穿過密封件631-636耦接至個別回流導管621-626允許對研磨表面674之不同區域進行單獨的溫度控制。例如,可將個別控制閥681-686置於各別回流導管621-626之下游及遠離平臺610之處,以賦能對每一通道651-656之單獨的溫度控制。冷卻劑之流量或溫度可經調整以向每一通道651-656提供更多或更少之冷卻。During operation, the coolant from the coolant supply 680 may flow through the channels 651-656 using one or more pumps (not shown) to provide temperature control of the polishing pad 650 and the polishing surface 674. Coupling the individual return channels 651R-656R through the seals 631-636 to the individual return conduits 621-626 allows separate temperature control of different areas of the abrasive surface 674. For example, individual control valves 681-686 can be placed downstream of the respective return conduits 621-626 and away from the platform 610 to enable individual temperature control of each channel 651-656. The flow or temperature of the coolant can be adjusted to provide more or less cooling to each channel 651-656.

研磨墊650亦可包括一或更多個感測器,如一或更多個溫度感測器。例如,研磨墊650可包括溫度感測器661-666,該溫度感測器定位在各個通道651-656中之每一者中以測量該通道651-656之溫度。在另一實例中,溫度感測器661-666中之一或更多者可定位在研磨墊350之研磨表面(例如襯墊之曝露表面)處或附近,以便可在研磨製程期間測量研磨墊及基板之表面溫度。溫度感測器661-666可包括熱電偶、RTD或類似類型之溫度測量裝置。溫度感測器661-666中之每一者可將測得的溫度傳達至控制器,如上文中藉由參考第3A圖及第3B圖所述之控制器25。溫度感測器661-666與控制器25之間的通信可為有線或無線。控制器25可藉由調整控制閥681-686之位置而控制通道651-656內側之溫度。在一個實施例中,控制器25為用於不同通道651-656之每一對溫度感測器及控制閥執行諸如PID迴路之個別反饋迴路。在一些實施例中,可將額外溫度感測器置於研磨墊650中之其他位置,如主供應通道641M中,以提供研磨墊650內側溫度之更多資料。The polishing pad 650 may also include one or more sensors, such as one or more temperature sensors. For example, the polishing pad 650 may include temperature sensors 661-666 that are positioned in each of the various channels 651-656 to measure the temperature of the channels 651-656. In another example, one or more of the temperature sensors 661-666 may be positioned at or near the polishing surface of the polishing pad 350 (eg, the exposed surface of the pad) so that the polishing pad can be measured during the polishing process And the surface temperature of the substrate. The temperature sensors 661-666 may include thermocouples, RTDs, or similar types of temperature measuring devices. Each of the temperature sensors 661-666 can communicate the measured temperature to the controller, as described above by referring to the controller 25 of FIGS. 3A and 3B. The communication between the temperature sensors 661-666 and the controller 25 may be wired or wireless. The controller 25 can control the temperature inside the channels 651-656 by adjusting the positions of the control valves 681-686. In one embodiment, the controller 25 performs a separate feedback loop such as a PID loop for each pair of temperature sensors and control valves for different channels 651-656. In some embodiments, additional temperature sensors may be placed at other locations in the polishing pad 650, such as the main supply channel 641M, to provide more information about the temperature inside the polishing pad 650.

亦可將供應控制閥690置於冷卻劑供應680與主供應通道641M之間,以控制到達研磨墊之冷卻劑之整體流量。在一些實施例中,每一通道651-656具有單獨供應導管及單獨回流導管,以便對耦接至例如研磨墊之第一通道的控制閥進行的調整不影響加熱或冷卻流體流向研磨墊650之其他通道中之一或更多者。與間接方法(如冷卻平臺)相比,使冷卻劑直接流經研磨墊可提供對研磨表面之更佳溫度控制。改良之溫度控制使得研磨得以改良,如更均勻的研磨及更一致的研磨速率。儘管上文參考第5A圖及第5B圖未予以論述,但研磨墊550亦可包括一或更多個溫度感測器,以賦能研磨墊550之溫度控制,該溫度控制之方式類似於研磨墊650之溫度控制。The supply control valve 690 can also be placed between the coolant supply 680 and the main supply channel 641M to control the overall flow of coolant to the polishing pad. In some embodiments, each channel 651-656 has a separate supply conduit and a separate return conduit so that adjustments to the control valve coupled to the first channel of, for example, the polishing pad do not affect the flow of heating or cooling fluid to the polishing pad 650 One or more of the other channels. Compared with indirect methods (such as cooling platforms), flowing coolant directly through the polishing pad provides better temperature control of the polishing surface. The improved temperature control enables improved grinding, such as more uniform grinding and more consistent grinding rate. Although not discussed above with reference to FIGS. 5A and 5B, the polishing pad 550 may also include one or more temperature sensors to enable temperature control of the polishing pad 550 in a manner similar to polishing Temperature control of pad 650.

在一些實施例中,可將諸如鰭狀結構之額外結構置於通道651-656中,以為研磨墊650與冷卻劑之間的熱傳遞提供額外的表面面積。鰭狀結構可從通道651-656側壁中之一或更多者中伸出。在一些實施例中,其他通道排列可用於熱傳遞。例如,在一個實施例中,通道可圍繞研磨墊之中心形成一或更多個迴路,該等迴路盤旋朝向或離開研磨墊中心。在其他實施例中,通道可圍繞研磨墊中心延伸至小於閉合迴路之程度。In some embodiments, additional structures such as fin structures can be placed in the channels 651-656 to provide additional surface area for heat transfer between the polishing pad 650 and the coolant. The fin-like structure may protrude from one or more of the side walls of the channels 651-656. In some embodiments, other channel arrangements may be used for heat transfer. For example, in one embodiment, the channels may form one or more loops around the center of the polishing pad, the loops spiraling toward or away from the center of the polishing pad. In other embodiments, the channel may extend around the center of the polishing pad to less than a closed loop.

第7圖是根據一個實施例之研磨墊750之局部側剖面視圖。研磨墊750可具有大致環形形狀,該形狀類似於上文論述之另一研磨墊。研磨墊750包括供應通道761及氣室765。氣室765可安置在研磨表面774鄰近處,如在研磨表面774下方。研磨墊750進一步包括研磨特徵771。每一研磨特徵771可包括研磨特徵通道775。研磨特徵通道775可與供應通道761及氣室765一起用於向研磨表面774中之孔口776輸送流體。7 is a partial side cross-sectional view of the polishing pad 750 according to an embodiment. The polishing pad 750 may have a generally ring shape that is similar to another polishing pad discussed above. The polishing pad 750 includes a supply channel 761 and an air chamber 765. The gas chamber 765 may be disposed adjacent to the grinding surface 774, such as below the grinding surface 774. The polishing pad 750 further includes abrasive features 771. Each abrasive feature 771 may include abrasive feature channels 775. The grinding feature channel 775 can be used with the supply channel 761 and the air chamber 765 to deliver fluid to the orifice 776 in the grinding surface 774.

經由研磨特徵通道775輸送至研磨表面774之流體可包括諸如漿料、表面活性劑、去離子水,及其他流體之流體。可經由一或更多個平臺導管(未圖示)而輸送流體。在一些實施例中,漿料可經由供應通道761而輸送,且諸如表面活性劑及去離子水之其他流體可經由輔助通道(未圖示)而輸送。供應通道761及輔助通道可在研磨墊750表面上具有埠,如研磨墊750之底表面。直接從研磨特徵中輸送流體確保在正在研磨之基板與研磨墊之間提供流體。The fluid delivered to the abrasive surface 774 via the abrasive feature channel 775 may include fluids such as slurry, surfactant, deionized water, and other fluids. The fluid can be delivered via one or more platform conduits (not shown). In some embodiments, the slurry may be transported via the supply channel 761, and other fluids such as surfactants and deionized water may be transported via an auxiliary channel (not shown). The supply channel 761 and the auxiliary channel may have ports on the surface of the polishing pad 750, such as the bottom surface of the polishing pad 750. Direct delivery of fluid from the polishing feature ensures that fluid is provided between the substrate being polished and the polishing pad.

第8A圖是一俯視平面圖,該圖圖示根據一個實施例之研磨墊850之內部通道佈局。第8B圖是第8A圖中研磨墊850之局部側剖面視圖。研磨墊850包括第一研磨通道851、第二研磨通道852,及第三研磨通道853。通道851-853可大體上圍繞研磨墊850之中心857而延伸,如圍繞研磨墊850之中心857延伸360度。通道851-853各自流體耦接至共用供應通道861。FIG. 8A is a top plan view illustrating the internal channel layout of the polishing pad 850 according to one embodiment. FIG. 8B is a partial side sectional view of the polishing pad 850 in FIG. 8A. The polishing pad 850 includes a first polishing channel 851, a second polishing channel 852, and a third polishing channel 853. The channels 851-853 may extend generally around the center 857 of the polishing pad 850, such as 360 degrees around the center 857 of the polishing pad 850. The channels 851-853 are each fluidly coupled to a common supply channel 861.

研磨墊850進一步包括複數個研磨特徵,該等研磨特徵包括第一研磨特徵871及第二研磨特徵872。每一第一研磨特徵871可包括研磨特徵通道875。每一研磨特徵通道875可與供應通道861一起用以穿過研磨表面874將流體輸送至第一研磨特徵871端部之孔口876。第一研磨特徵871各自具有穿過研磨表面874之孔口876,且第二批研磨特徵872各自沒有穿過研磨表面874之孔口。通道851-853中之每一者可安置在第一研磨特徵871中至少一些者之鄰近處,如在第一研磨特徵871之下方。第二批研磨特徵872可安置在通道851-853之間,以便第一研磨特徵871之環可圍繞第二批研磨特徵872之環。The polishing pad 850 further includes a plurality of polishing features. The polishing features include a first polishing feature 871 and a second polishing feature 872. Each first grinding feature 871 may include a grinding feature channel 875. Each grinding feature channel 875 can be used with the supply channel 861 to deliver fluid through the grinding surface 874 to the orifice 876 at the end of the first grinding feature 871. The first abrasive features 871 each have an aperture 876 through the abrasive surface 874, and the second batch of abrasive features 872 each do not have an aperture through the abrasive surface 874. Each of the channels 851-853 may be disposed adjacent to at least some of the first abrasive features 871, such as below the first abrasive feature 871. The second batch of grinding features 872 may be positioned between the channels 851-853 so that the ring of the first grinding feature 871 may surround the ring of the second batch of grinding features 872.

第一研磨特徵871可用以輸送流體至研磨表面874,該等流體如漿料、表面活性劑,及去離子水。可經由一或更多個平臺導管(未圖示)而輸送流體。在一些實施例中,可經由供應通道861而輸送漿料,且可經由輔助通道(未圖示)而輸送諸如表面活性劑及去離子水之其他流體。供應通道861及輔助通道可在研磨墊850表面上具有埠,該表面如研磨墊850之底表面。The first abrasive feature 871 can be used to deliver fluids to the abrasive surface 874, such fluids as slurry, surfactant, and deionized water. The fluid can be delivered via one or more platform conduits (not shown). In some embodiments, the slurry may be delivered via the supply channel 861, and other fluids such as surfactants and deionized water may be delivered via an auxiliary channel (not shown). The supply channel 861 and the auxiliary channel may have ports on the surface of the polishing pad 850, such as the bottom surface of the polishing pad 850.

直接從研磨特徵中輸送流體確保在正在研磨之基板與研磨墊之間提供流體。儘管研磨墊850具有輸送流體之第一研磨特徵871及不輸送流體之第二批研磨特徵872的交替環,但亦可使用其他排列。例如,可能有比第二批研磨特徵872多或少之第一研磨特徵871。亦可有容納在同一環中之第一研磨特徵871及第二批研磨特徵872,該環圍繞研磨墊850之中心857。在一些實施例中,不同通道可流體耦接至平臺之不同導管,以便研磨墊之不同區域可接收不同的流體量。例如,如若基板顯著小於研磨墊,且基板正在研磨墊邊緣附近進行研磨,則大多數或全部流體可提供至研磨墊850之邊緣,而較少或沒有流體可不提供至研磨墊中心。該種設計可藉由使用更少流體來節省材料成本,該等流體如CMP期間使用之漿料。Direct delivery of fluid from the polishing feature ensures that fluid is provided between the substrate being polished and the polishing pad. Although the polishing pad 850 has alternating rings of first polishing features 871 that transport fluid and second batches of polishing features 872 that do not transport fluid, other arrangements may be used. For example, there may be more or less first grinding features 871 than the second batch of grinding features 872. There may also be a first grinding feature 871 and a second batch of grinding features 872 contained in the same ring that surrounds the center 857 of the polishing pad 850. In some embodiments, different channels may be fluidly coupled to different conduits of the platform so that different areas of the polishing pad can receive different amounts of fluid. For example, if the substrate is significantly smaller than the polishing pad and the substrate is being polished near the edge of the polishing pad, most or all of the fluid may be provided to the edge of the polishing pad 850, and little or no fluid may not be provided to the center of the polishing pad. This design can save material costs by using less fluid, such as slurry used during CMP.

第9A-9H圖圖示上文論述之研磨特徵可能具有之一些不同形狀的俯視圖及側視圖。在一些實施例中,上文論述之研磨特徵可採取圓柱形狀。第9A圖圖示具有圓柱形狀之研磨特徵910之俯視圖。第9B圖圖示研磨特徵910之側視圖,該研磨特徵910具有連接至研磨墊(未圖示)之第一側911及形成研磨墊之部分研磨表面之第二側912。在其他實施例中,上文論述之研磨特徵可採用稜柱之形狀,該稜柱具有任何多邊形之橫剖面,如三角形、正方形、矩形、五邊形、六邊形,等等。第9C圖圖示具有矩形稜柱形狀之研磨特徵920之俯視圖。第9D圖圖示研磨特徵920之側視圖,該研磨特徵920具有連接至研磨墊(未圖示)之第一側921及形成研磨墊之部分研磨表面之第二側922。Figures 9A-9H illustrate top and side views of some different shapes that the abrasive features discussed above may have. In some embodiments, the abrasive features discussed above can take the shape of a cylinder. FIG. 9A illustrates a top view of an abrasive feature 910 having a cylindrical shape. FIG. 9B illustrates a side view of the polishing feature 910 having a first side 911 connected to a polishing pad (not shown) and a second side 912 forming part of the polishing surface of the polishing pad. In other embodiments, the abrasive features discussed above may take the shape of prisms having any polygonal cross-section, such as triangles, squares, rectangles, pentagons, hexagons, and so on. FIG. 9C illustrates a top view of an abrasive feature 920 having a rectangular prism shape. FIG. 9D illustrates a side view of the polishing feature 920 having a first side 921 connected to a polishing pad (not shown) and a second side 922 that forms part of the polishing surface of the polishing pad.

在其他實施例中,上文論述之研磨特徵可採取鰭形形狀。在該等實施例中之一些實施例中,鰭可能採取矩形稜柱形狀,在此情況下,橫剖面之一個尺寸大於另一方向之長度的兩倍。在其他實施例中,鰭可包括其他形狀,如允許鰭遵循圓形研磨墊之曲率的彎曲特徵。第9E圖圖示研磨特徵930之俯視圖,該研磨特徵930具有鰭形形狀,該鰭具有矩形稜柱形式,在該情況下,第一尺寸936大於第二尺寸937之兩倍長度。第9F圖圖示研磨特徵930之側視圖,該研磨特徵930具有連接至研磨墊(未圖示)之第一側931及形成研磨墊之部分研磨表面之第二側932。In other embodiments, the abrasive features discussed above may assume a fin shape. In some of these embodiments, the fin may take the shape of a rectangular prism, in which case one dimension of the cross section is greater than twice the length in the other direction. In other embodiments, the fins may include other shapes, such as curved features that allow the fins to follow the curvature of a circular polishing pad. FIG. 9E illustrates a top view of the abrasive feature 930 having a fin shape with a rectangular prismatic form. In this case, the first dimension 936 is greater than twice the length of the second dimension 937. FIG. 9F illustrates a side view of the polishing feature 930 having a first side 931 connected to a polishing pad (not shown) and a second side 932 that forms part of the polishing surface of the polishing pad.

在其他實施例中,上文論述之研磨特徵可採取圓錐或角錐形狀,如截頂錐或角錐。第9G圖圖示具有截頂錐形狀之研磨特徵940之俯視圖。第9H圖圖示研磨特徵940之側視圖,該研磨特徵940具有連接至研磨墊(未圖示)之第一側941及形成研磨墊之部分研磨表面之第二側942。In other embodiments, the abrasive features discussed above may take the shape of cones or pyramids, such as truncated cones or pyramids. Figure 9G illustrates a top view of a grinding feature 940 having a truncated cone shape. FIG. 9H illustrates a side view of the polishing feature 940 having a first side 941 connected to a polishing pad (not shown) and a second side 942 forming part of the polishing surface of the polishing pad.

使用由個別研磨特徵形成之研磨表面(如藉由參考第9A圖至第9H圖所論述之研磨特徵)提供眾多益處。不使用個別研磨特徵之研磨墊通常已使用溝槽,如形成同心環之溝槽。該等溝槽通常已藉由從研磨墊表面移除材料而形成。儘管該等溝槽可允許充足流體在溝槽內傳遞,但溝槽之間的壁則阻礙溝槽之間的流體傳遞。另一方面,當使用個別研磨特徵時,流體可圍繞個別特徵而流動,且沒有諸如溝槽之間的壁之大型結構來抑制研磨墊表面上任何方向上之流體傳輸。當無法向研磨頭及基板下方之研磨墊區域提供充足的諸如漿料之流體時,可能浪費諸如漿料之流體。浪費漿料可降低研磨製程之效率且增大成本。個別特徵可促進諸如漿料之流體向研磨頭及基板下方之研磨墊區域之傳遞,從而減少浪費且增加效率。The use of abrasive surfaces formed from individual abrasive features (such as those discussed by reference to Figures 9A through 9H) provides numerous benefits. Grinding pads that do not use individual grinding features have typically used grooves, such as grooves that form concentric rings. These grooves have generally been formed by removing material from the surface of the polishing pad. Although the grooves may allow sufficient fluid to pass within the grooves, the walls between the grooves hinder fluid transmission between the grooves. On the other hand, when individual abrasive features are used, fluid can flow around the individual features, and there are no large structures such as walls between the grooves to inhibit fluid transport in any direction on the surface of the abrasive pad. When the polishing head and the polishing pad area under the substrate cannot be supplied with sufficient fluid such as slurry, fluid such as slurry may be wasted. Waste slurry can reduce the efficiency of the grinding process and increase costs. Individual features can facilitate the transfer of fluids such as slurry to the polishing head and the polishing pad area under the substrate, thereby reducing waste and increasing efficiency.

個別研磨特徵亦允許具有多個類型之研磨特徵之設計,在該情況下,不同類型之研磨特徵可執行不同的功能。例如,上文論述之研磨墊450允許利用可調整的研磨特徵471或固定研磨特徵472進行研磨,從而賦能利用一個研磨墊獲得兩個或兩個以上類型之研磨結果,如先粗糙研磨後精細研磨。可使用諸如3D列印之增添製造技術形成個別特徵。Individual grinding features also allow designs with multiple types of grinding features, in which case different types of grinding features can perform different functions. For example, the polishing pad 450 discussed above allows for grinding with adjustable grinding features 471 or fixed grinding features 472, thereby enabling one grinding pad to obtain two or more types of grinding results, such as rough grinding followed by fine grinding Grind. Additional manufacturing techniques such as 3D printing can be used to form individual features.

第10圖是一製程流程圖,該圖概述用於藉由使用3D印表機形成具有一或更多個內部通道之研磨墊之製程1000。第11圖圖示3D印表機50,該印表機可用以執行製程1000以形成研磨墊,如上文藉由參考第2圖論述及第11圖中再次圖示之研磨墊250。儘管下文藉由使用研磨墊250作為可使用製程1000製造之示例性研磨墊來描述製程1000,但上文藉由參考第2-8B圖論述之任一研磨墊及第9A-9H圖中之研磨特徵皆可使用製程1000而形成。Figure 10 is a process flow diagram that outlines a process 1000 for forming a polishing pad with one or more internal channels by using a 3D printer. FIG. 11 illustrates a 3D printer 50 that can be used to perform a process 1000 to form a polishing pad, such as the polishing pad 250 discussed above with reference to FIG. 2 and shown again in FIG. 11. Although process 1000 is described below by using polishing pad 250 as an exemplary polishing pad that can be manufactured using process 1000, any polishing pad discussed above with reference to FIGS. 2-8B and polishing in FIGS. 9A-9H Features can be formed using process 1000.

3D印表機50可使用噴射光聚合物製程以沉積光聚合物滴液,隨後使用紫外線固化以形成研磨墊250之結構。3D印表機50可列印光聚合物材料及一或更多個其他材料之連續層以形成研磨墊250。3D印表機50可使用一或更多個列印頭以沉積組成材料及支撐材料。用以形成研磨墊250之組成材料可為光聚合物,如丙烯酸封端聚胺甲酸酯或任何聚合物,諸如聚酯、耐龍、聚苯碸(polyphenylsulfone; PPS)、聚醚酮(PEEK)聚乙烯醇、聚乙酸乙烯酯、聚氯乙烯、聚碳酸酯,或聚醯胺及上述各者之共聚物及摻合物。組成材料亦可包括丙烯酸光聚合物單體及寡聚物,如聚胺甲酸酯丙烯酸酯、聚酯丙烯酸酯,及環氧丙烯酸酯。可用以形成研磨墊250之其他材料包括聚胺甲酸酯丙烯酸酯、環氧樹脂、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯亞胺,或聚醯胺。支撐材料亦可是光聚合物,或支撐材料可能是不同材料,如另一聚合物、蠟,或水溶性材料。支撐材料用以在列印製程期間充填任何空隙並支撐任何研磨墊250之懸垂物。研磨墊250形成之後,可使用諸如相變、溶解、化學反應或機械製程之製程選擇性地從研磨墊250上移除支撐材料。儘管對製程1000描述的是噴射光聚合物3D列印製程,但亦可使用其他3D列印製程,如立體微影(stereolithography; SLA)、選擇性鐳射燒結(selective laser sintering; SLS),或熔融燈絲製造(fused filament fabrication; FFF)。The 3D printer 50 may use a jet photopolymer process to deposit photopolymer droplets, and then use ultraviolet curing to form the structure of the polishing pad 250. The 3D printer 50 can print a continuous layer of photopolymer material and one or more other materials to form the polishing pad 250. The 3D printer 50 can use one or more print heads to deposit the constituent materials and supports material. The material used to form the polishing pad 250 may be a photopolymer, such as acrylic-terminated polyurethane or any polymer, such as polyester, nylon, polyphenylsulfone (PPS), and polyetherketone (PEEK) ) Polyvinyl alcohol, polyvinyl acetate, polyvinyl chloride, polycarbonate, or polyamide and copolymers and blends of the above. The constituent materials may also include acrylic photopolymer monomers and oligomers, such as polyurethane acrylate, polyester acrylate, and epoxy acrylate. Other materials that can be used to form the polishing pad 250 include polyurethane acrylate, epoxy resin, acrylonitrile butadiene styrene (ABS), polyether amide imide, or poly amide. The support material may also be a photopolymer, or the support material may be a different material, such as another polymer, wax, or water-soluble material. The support material is used to fill any voids and support any overhangs of the polishing pad 250 during the printing process. After the polishing pad 250 is formed, the support material may be selectively removed from the polishing pad 250 using processes such as phase change, dissolution, chemical reaction, or mechanical processes. Although process 1000 describes a jet photopolymer 3D printing process, other 3D printing processes can also be used, such as stereolithography (SLA), selective laser sintering (SLS), or melting Filament manufacturing (fused filament fabrication; FFF).

在方塊1002中,研磨墊250之3D模型以賦能3D列印之格式載入3D印表機50,該格式如STL。在方塊1004中,3D印表機50藉由在平臺70上沉積初始基底層260i 而開始列印。平臺70可為金屬、塑料,或陶瓷材料,如鋁、鈦、鐵、不銹鋼、氧化鋁(Al2 O3 )、矽、二氧化矽,或碳化矽。如若平臺70由金屬材料形成,則金屬可經電鍍或陽極化以改良釋放特性。平臺70可塗覆有非黏著材料,如聚四氟乙烯。初始基底層260i 包括組成材料及支撐材料。3D印表機沉積組成材料以形成研磨墊250之結構。3D印表機50沉積支撐材料(未圖示)以充填組成材料之區域之間的任何空隙或間隙,如埠241、242。支撐材料亦可圍繞研磨墊250周緣而沉積。埠241、242可用於將研磨墊250流體耦接至來自平臺或另一個源之流體。在沉積初始基底層260i 之後或之時,使用紫外線能而固化初始基底層260i 之組成材料。支撐材料亦經由固化、相變或另一製程而凝固。At block 1002, the 3D model of the polishing pad 250 is loaded into the 3D printer 50 in a format that enables 3D printing, such as STL. In block 1004, 3D printer initial base layer 50 by depositing on the platform 260 i 70 starts printing. The platform 70 may be metal, plastic, or ceramic material, such as aluminum, titanium, iron, stainless steel, aluminum oxide (Al 2 O 3 ), silicon, silicon dioxide, or silicon carbide. If the platform 70 is formed of a metal material, the metal can be plated or anodized to improve the release characteristics. The platform 70 may be coated with a non-adhesive material, such as polytetrafluoroethylene. The initial base layer 260 i includes constituent materials and supporting materials. The 3D printer deposits the constituent materials to form the structure of the polishing pad 250. The 3D printer 50 deposits support material (not shown) to fill any voids or gaps between the areas that make up the material, such as ports 241, 242. The support material can also be deposited around the periphery of the polishing pad 250. Ports 241, 242 can be used to fluidly couple the polishing pad 250 to a fluid from a platform or another source. After the initial deposition of the base layer 260 i or when the initial ultraviolet cured base layer can be composed of material 260 i. The support material also solidifies through curing, phase change, or another process.

在方塊1006中,3D印表機50在初始基底層260i 上方沉積額外的基底層以形成基底區260。3D印表機在額外層中沉積組成材料以形成研磨墊250之結構,且沉積支撐材料以充填研磨墊250中之任何空隙或間隙,如通道251、252。在沉積下一層之前,利用紫外線能固化每一層組成材料。亦可繼續圍繞研磨墊250之周緣沉積支撐材料以提供額外支撐。在一些實施例中,在方塊1006期間可暫停製程1000,以便安裝一或更多個感測器,如上文中藉由參考第3A圖、第3B圖及第6A圖、第6B圖論述之壓力感測器及溫度感測器。在一些實施例中,3D印表機50可形成凹槽,感測器置於該凹槽中,然後3D印表機50可圍繞感測器形成連續層以將感測器緊固到位。在其他實施例中,3D印表機50可沉積組成材料,該材料隨後將被移除以形成自研磨墊外側到達研磨墊內側通道之一的一或更多個埠。例如,一或更多個埠可形成於研磨墊中在研磨期間面對平臺之側上。藉由對研磨墊通道使用可從外部進出之埠,可更易於從研磨墊上移除感測器。除移除感測器以用於另一研磨墊之外,如若感測器故障並需要更換,則移除感測器可十分有用,例如在研磨墊之使用壽命已結束之情況下。At block 1006, additional 3D printer base layer 50 is deposited over the initial base layer to form a base region 260 i 260.3D printer constituent material deposited additional layer to form the polishing pad structure 250, and the deposition support The material fills any voids or gaps in the polishing pad 250, such as the channels 251, 252. Before the next layer is deposited, each component material is cured using ultraviolet light. Support material may continue to be deposited around the periphery of the polishing pad 250 to provide additional support. In some embodiments, the process 1000 may be suspended during block 1006 to install one or more sensors, such as the sense of pressure discussed above with reference to FIGS. 3A, 3B, 6A, and 6B Sensor and temperature sensor. In some embodiments, the 3D printer 50 may form a groove in which the sensor is placed, and then the 3D printer 50 may form a continuous layer around the sensor to secure the sensor in place. In other embodiments, the 3D printer 50 may deposit a constituent material, which will then be removed to form one or more ports from one side of the polishing pad to one of the channels inside the polishing pad. For example, one or more ports may be formed in the polishing pad on the side facing the platform during polishing. By using ports that can be accessed from the outside for the polishing pad channel, the sensor can be more easily removed from the polishing pad. In addition to removing the sensor for use with another polishing pad, if the sensor fails and needs to be replaced, removing the sensor can be very useful, for example, when the life of the polishing pad has ended.

在方塊1008中,3D印表機50在基底區260上方沉積研磨層以形成研磨區域270。在一些實施例中,基底區260及研磨區域270由相同材料形成,如由聚胺甲酸酯形成。在其他實施例中,基底區260及研磨區域270可由不同的材料形成。3D印表機50可形成具有組成材料之研磨區域270及研磨特徵271。3D印表機50可在研磨特徵271之間沉積支撐材料(未圖示)。在諸如研磨墊750或研磨墊850之實施例中,3D印表機50可沉積支撐材料以形成穿過研磨特徵之通道,如研磨特徵通道775、875。At block 1008, the 3D printer 50 deposits an abrasive layer over the base region 260 to form an abrasive region 270. In some embodiments, the base region 260 and the polishing region 270 are formed of the same material, such as polyurethane. In other embodiments, the base region 260 and the polishing region 270 may be formed of different materials. The 3D printer 50 can form a grinding region 270 and a grinding feature 271 having constituent materials. The 3D printer 50 can deposit a supporting material (not shown) between the grinding features 271. In embodiments such as abrasive pad 750 or abrasive pad 850, 3D printer 50 may deposit support material to form channels through abrasive features, such as abrasive feature channels 775, 875.

在方塊1010中,從研磨墊250上移除支撐材料。根據所使用之支撐材料類型,可經由相變、溶解、化學反應或其他製程來移除支撐材料。例如,當使用水溶性支撐材料時,可將研磨墊250浸入水浴中以移除支撐材料。At block 1010, the support material is removed from the polishing pad 250. Depending on the type of support material used, the support material can be removed via phase change, dissolution, chemical reaction, or other processes. For example, when a water-soluble support material is used, the polishing pad 250 may be immersed in a water bath to remove the support material.

在另一實施例中,3D印表機50可用以形成具有複合襯墊主體的研磨墊。複合襯墊主體包括由至少兩個不同材料形成之離散特徵。研磨墊可藉由類似於製程1000之三維(three-dimensional; 3D)列印製程而生產。例如,複合襯墊主體可利用3D印表機50藉由連續沉積複數個層而形成,每一層包括不同材料或不同材料組成之區域。然後,該複數個層可藉由固化而凝固。可同時利用不同的材料或不同的材料組成形成複合襯墊主體中之離散特徵。3D列印之沉積及固化製程允許離散特徵牢固接合在一起。離散特徵之幾何形狀可藉由使用3D列印製程而易於控制。藉由選擇不同的材料或不同的材料組成,離散特徵可具有不同的機械、物理、化學,及幾何形狀特性,以獲得指定的襯墊特性。在一個實施例中,複合主體可由具有不同機械特性之黏彈性材料形成。例如,複合主體可由具有不同儲存模數及不同損失模式之黏彈性材料形成。因此,複合襯墊主體可包括由第一材料或第一材料組成形成之一些彈性特徵,且由第二材料或第二材料組成形成之一些堅硬特徵,該第二材料或第二材料組成比第一材料或第一材料組成更剛硬。In another embodiment, the 3D printer 50 can be used to form an abrasive pad with a composite pad body. The composite cushion body includes discrete features formed from at least two different materials. The polishing pad can be produced by a three-dimensional (3D) printing process similar to the process 1000. For example, the composite liner body may be formed by continuously depositing multiple layers using the 3D printer 50, each layer including a different material or a region composed of different materials. Then, the plurality of layers can be solidified by curing. Different materials or different material compositions can be used simultaneously to form discrete features in the composite cushion body. The deposition and curing process of 3D printing allows discrete features to be firmly joined together. The geometry of discrete features can be easily controlled by using a 3D printing process. By selecting different materials or different materials, the discrete features can have different mechanical, physical, chemical, and geometric characteristics to obtain the specified pad characteristics. In one embodiment, the composite body may be formed from viscoelastic materials with different mechanical properties. For example, the composite body may be formed of viscoelastic materials with different storage modulus and different loss modes. Therefore, the composite cushion body may include some elastic features formed by the first material or the first material, and some hard features formed by the second material or the second material, and the second material or the second material One material or the first material composition is more rigid.

此外,可為彈性特徵及堅硬特徵選擇不同的機械特性以實現均勻研磨。機械特性之變更可藉由選擇不同的材料及/或選擇不同的固化製程而實現。在一個實施例中,彈性特徵可具有更低硬度值及更低楊氏模數值,而堅硬特徵可具有更高硬度值及更高楊氏模數值。在另一實施例中,諸如儲存模數及損失模數之動態機械特性可用以設計彈性特徵及堅硬特徵。In addition, different mechanical properties can be selected for elastic and hard features to achieve uniform grinding. The mechanical properties can be changed by selecting different materials and/or selecting different curing processes. In one embodiment, the elastic features may have lower hardness values and lower Young's modulus values, while the hard features may have higher hardness values and higher Young's modulus values. In another embodiment, dynamic mechanical properties such as storage modulus and loss modulus can be used to design elastic and rigid features.

堅硬特徵可由聚合物材料形成。堅硬特徵可由單聚合物材料或兩個或兩個以上聚合物之混合物形成,以獲得目標特性。在一個實施例中,堅硬特徵可由一或更多個熱塑性聚合物形成,如聚胺甲酸酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚苯硫、聚醚碸、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯亞胺、聚醯胺、三聚氰胺、聚酯、聚碸、聚乙酸乙烯酯、氟化烴,等等,及上述各者之混合物、共聚物及接枝物。在另一實施例中,硬質特徵可包括一或更多個熱固性聚合物,如環氧樹脂、酚醛樹脂、胺類、聚酯、胺基甲酸酯、矽,及上述各者之混合物、共聚物,及接枝物。此外,在一個實施例中,磨粒可嵌入堅硬特徵中以強化研磨。包括磨粒之材料可為金屬氧化物(如氧化鈰、氧化鋁、氧化矽,或上述各者之組合)、聚合物、金屬間化合物,或陶瓷。The stiff features can be formed from polymer materials. Rigid features can be formed from a single polymer material or a mixture of two or more polymers to achieve the desired characteristics. In one embodiment, the rigid feature may be formed from one or more thermoplastic polymers, such as polyurethane, polypropylene, polystyrene, polyacrylonitrile, polymethyl methacrylate, polychlorotrifluoroethylene, Polytetrafluoroethylene, polyoxymethylene, polycarbonate, polyimide, polyether ether ketone, polyphenylene sulfide, polyether ash, acrylonitrile butadiene styrene (ABS), polyether amide imine , Polyamide, melamine, polyester, polystyrene, polyvinyl acetate, fluorinated hydrocarbons, etc., and mixtures, copolymers and grafts of the above. In another embodiment, the hard features may include one or more thermosetting polymers, such as epoxy resins, phenolic resins, amines, polyesters, carbamates, silicon, and mixtures, copolymerizations of the above Thing, and graft. Additionally, in one embodiment, abrasive particles can be embedded in the hard features to enhance grinding. The material including abrasive particles may be metal oxide (such as cerium oxide, aluminum oxide, silicon oxide, or a combination of the foregoing), polymer, intermetallic compound, or ceramic.

彈性特徵可由一或更多個聚合物材料形成。彈性特徵可由單聚合物材料或兩個或兩個以上聚合物之混合物而形成,以獲得目標特性。在一個實施例中,彈性特徵可由一或更多個熱塑性聚合物形成。例如,彈性特徵可由熱塑性聚合物形成,如聚胺甲酸酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚苯硫、聚醚碸、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯亞胺、聚醯胺、三聚氰胺、聚酯、聚碸、聚乙酸乙烯酯、氟化烴,等等,及上述各者之混合物、共聚物及接枝物。彈性特徵206可由熱塑性彈性體形成。在一個實施例中,彈性特徵可由橡膠狀3D列印材料形成。The elastic feature may be formed from one or more polymer materials. The elastic feature can be formed from a single polymer material or a mixture of two or more polymers to achieve the desired characteristics. In one embodiment, the elastic features may be formed from one or more thermoplastic polymers. For example, elastic features can be formed from thermoplastic polymers such as polyurethane, polypropylene, polystyrene, polyacrylonitrile, polymethyl methacrylate, polychlorotrifluoroethylene, polytetrafluoroethylene, polyoxymethylene, poly Carbonate, polyimide, polyetheretherketone, polyphenylene sulfide, polyether sulfone, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamide, melamine, polyester , Polystyrene, polyvinyl acetate, fluorinated hydrocarbons, etc., and mixtures, copolymers and grafts of the above. The elastic feature 206 may be formed from a thermoplastic elastomer. In one embodiment, the elastic feature may be formed from a rubber-like 3D printing material.

堅硬特徵一般比彈性特徵更堅硬及剛性更大,而彈性特徵比堅硬特徵更柔軟及撓曲性更大。可選擇堅硬特徵及彈性特徵之材料、圖案,及相對用量以獲得研磨墊之「調諧」整塊材料。利用此「調諧」整塊材料形成之研磨墊具有各種益處,如改良之研磨結果、降低的製造成本、延長之襯墊使用壽命。在一個實施例中,「調諧」整塊材料或研磨墊整體上可具有約65肖氏A至約75肖氏D之間的硬度。研磨墊之抗拉強度可在5 MPa與約75 MPa之間。研磨墊可具有約5%至約350%之墊延長。研磨墊可具有約10m Pa以上之抗剪強度。研磨墊可具有約5 MPa與約2000 MPa之間的儲存模數。研磨墊可具有25℃至90℃溫度範圍中之穩定儲存模數,以使得E30/E90之儲存模數處於約6至約30之間的範圍中,其中E30是30℃下之儲存模數,且E90是90℃下之儲存模數。堅硬特徵及彈性特徵可在整個研磨墊主體及/或研磨墊之研磨層中使用。上述研磨墊450是可結合堅硬特徵及彈性特徵之研磨墊之一個實例。例如,可調整的研磨特徵471可為彈性特徵,該等彈性特徵可延伸經過固定研磨特徵472,該等固定研磨特徵為堅硬特徵。Hard features are generally harder and more rigid than elastic features, while elastic features are softer and more flexible than hard features. The materials, patterns, and relative amounts of hard and elastic features can be selected to obtain the "tuned" monolithic material of the polishing pad. Polishing pads formed from this "tuned" monolithic material have various benefits, such as improved polishing results, reduced manufacturing costs, and extended pad life. In one embodiment, the "tuned" monolithic material or polishing pad as a whole may have a hardness between about 65 Shore A to about 75 Shore D. The tensile strength of the polishing pad can be between 5 MPa and about 75 MPa. The polishing pad may have a pad extension of about 5% to about 350%. The polishing pad may have a shear strength of about 10m Pa or more. The polishing pad may have a storage modulus between about 5 MPa and about 2000 MPa. The polishing pad may have a stable storage modulus in the temperature range of 25°C to 90°C, so that the storage modulus of E30/E90 is in the range of about 6 to about 30, where E30 is the storage modulus at 30°C, And E90 is the storage modulus at 90°C. The hard and elastic features can be used throughout the polishing pad body and/or the polishing layer of the polishing pad. The above-mentioned polishing pad 450 is an example of a polishing pad that can combine hard and elastic features. For example, the adjustable abrasive feature 471 can be an elastic feature that can extend past the fixed abrasive feature 472, and the fixed abrasive feature can be a hard feature.

第12A圖是根據一個實施例之研磨墊1250之俯視剖面圖。第12B圖是研磨墊1250之側剖面視圖,該圖是沿第12A圖之線12B截取的。請參看第12A及12B圖,研磨墊1250類似於第7圖之研磨墊750,不同之處在於研磨墊1250包括圍繞研磨墊1250之中心1257安置之複數個區段1210。研磨墊1250經圖示包括四個區段1210,但亦可包括更多或更少區段。研磨墊1250包括複數個分離器1214以分隔相鄰區段。不同的區段1210可用以控制流體輸送,該流體輸送在X-Y平面內流經圍繞研磨墊1250之中心1257的不同角度區域。在一些實施例中,區段1210圍繞研磨墊1250之中心1257對稱安置。例如,研磨墊1250圖示四個對稱區段1210,每一區段在X-Y平面中覆蓋研磨墊1250中約90度之角度區域。FIG. 12A is a top cross-sectional view of a polishing pad 1250 according to an embodiment. Figure 12B is a side cross-sectional view of the polishing pad 1250, which is taken along line 12B of Figure 12A. Referring to FIGS. 12A and 12B, the polishing pad 1250 is similar to the polishing pad 750 of FIG. 7 except that the polishing pad 1250 includes a plurality of sections 1210 disposed around the center 1257 of the polishing pad 1250. The polishing pad 1250 is shown to include four sections 1210, but may include more or fewer sections. The polishing pad 1250 includes a plurality of separators 1214 to separate adjacent sections. Different sections 1210 can be used to control fluid delivery that flows through different angular areas around the center 1257 of the polishing pad 1250 in the X-Y plane. In some embodiments, the sections 1210 are arranged symmetrically around the center 1257 of the polishing pad 1250. For example, the polishing pad 1250 illustrates four symmetrical sections 1210, each of which covers an angular area of about 90 degrees in the polishing pad 1250 in the X-Y plane.

在一些實施例中,研磨墊1250一般可具有大致環形形狀,該形狀類似於上文論述之其他研磨墊。研磨墊1250之每一區段1210包括氣室1215(亦被稱作通道)及供應線路1216。每一氣室1215可圍繞區段之大部分角度區域延伸,如該區段之至少75%或至少90%之角度區域。每一氣室1215可安置在給定區段1210之研磨表面1274的鄰近處,如在區段1210之研磨表面1274下方。研磨墊1250之每一區段1210進一步包括研磨特徵1271。每一研磨特徵1271可包括研磨特徵通道1275。研磨特徵通道1275可與供應通道1261及氣室1265一起用於向穿過研磨表面1274之孔口1276輸送流體。In some embodiments, the polishing pad 1250 may generally have a generally annular shape that is similar to other polishing pads discussed above. Each section 1210 of the polishing pad 1250 includes an air chamber 1215 (also referred to as a channel) and a supply line 1216. Each plenum 1215 may extend around most of the angular area of the section, such as at least 75% or at least 90% of the angular area of the section. Each gas chamber 1215 may be disposed adjacent to the grinding surface 1274 of a given section 1210, such as below the grinding surface 1274 of the section 1210. Each section 1210 of the polishing pad 1250 further includes polishing features 1271. Each grinding feature 1271 can include a grinding feature channel 1275. The grinding feature channel 1275 can be used with the supply channel 1261 and the gas chamber 1265 to deliver fluid to the orifice 1276 passing through the grinding surface 1274.

供應氣室1215將給定區段1210之供應線路1216連接至區段1210之研磨特徵通道1275,以便可將流體輸送至區段1210之研磨表面1274。經由研磨特徵通道1275輸送至研磨表面1274之流體可包括諸如漿料、表面活性劑、襯墊清潔化學品、去離子水,及其他流體之流體。可經由平臺之一或更多個導管(未圖示)輸送流體。供應線路1216中之每一者可連接至研磨墊1250表面上之不同的埠1218,如研磨墊1250之底表面。直接從研磨通道特徵中輸送流體確保在正在研磨之基板與研磨墊之間提供流體。The supply air chamber 1215 connects the supply line 1216 of a given section 1210 to the grinding feature channel 1275 of the section 1210 so that fluid can be delivered to the grinding surface 1274 of the section 1210. The fluid delivered to the abrasive surface 1274 through the abrasive feature channel 1275 may include fluids such as slurry, surfactants, pad cleaning chemicals, deionized water, and other fluids. Fluid can be delivered via one or more conduits (not shown) of the platform. Each of the supply lines 1216 can be connected to a different port 1218 on the surface of the polishing pad 1250, such as the bottom surface of the polishing pad 1250. Direct delivery of fluid from the polishing channel feature ensures that fluid is provided between the substrate being polished and the polishing pad.

不同的區段1210可用以控制流體輸送,該流體輸送流經研磨墊1250之研磨表面1274的不同角度區域。例如,在研磨墊1250在研磨期間旋轉時,諸如漿料之流體可脈衝流經不同區段1210,以便在經研磨之基板在接觸區段1210之研磨特徵1271時,經由給定區段1210而輸送更多流體。在一個實施例中,每一供應線路1216連接至分隔閥1281-1284,在該情況下,每一閥1281-1284按需連接至漿料供應及一或更多個泵。諸如上述控制器25之控制器可用以開啟及閉合閥1281-1284。閥1281-1284之開啟及閉合可與研磨墊1250在平臺(未圖示)上之旋轉同步,以便當正在研磨之基板與區段1210之研磨特徵1271接觸時,諸如漿料之流體經脈衝流經給定區段。在一些實施例中,有時,相鄰區段1210之至少兩個閥(例如閥1281、1282)在研磨期間開啟,以便下一個將接觸基板之區段1210在基板下旋轉之前已將諸如漿料之流體供應至該下一區段1210之研磨表面1274。Different sections 1210 can be used to control fluid transport that flows through different angular areas of the polishing surface 1274 of the polishing pad 1250. For example, as the polishing pad 1250 rotates during polishing, fluids such as slurry may pulse through different sections 1210 so that when the polished substrate is in contact with the grinding features 1271 of the section 1210, via the given section 1210 Transport more fluid. In one embodiment, each supply line 1216 is connected to a partition valve 1281-1284, in which case each valve 1281-1284 is connected to a slurry supply and one or more pumps as needed. A controller such as controller 25 described above can be used to open and close valves 1281-1284. The opening and closing of the valves 1281-1284 can be synchronized with the rotation of the polishing pad 1250 on a platform (not shown) so that when the substrate being polished is in contact with the polishing feature 1271 of the section 1210, a fluid such as slurry flows through the pulse After a given section. In some embodiments, sometimes, at least two valves (eg, valves 1281, 1282) of adjacent sections 1210 are opened during grinding, so that the next section 1210 that will contact the substrate will The material fluid is supplied to the grinding surface 1274 of the next section 1210.

藉由在研磨期間使漿料或其他流體向基板位置之輸送同步,可節省大量漿料或其他流體。該等節省可降低使用化學機械研磨而製造的裝置之生產成本。By synchronizing the transport of slurry or other fluid to the substrate location during grinding, a large amount of slurry or other fluid can be saved. These savings can reduce the production cost of devices manufactured using chemical mechanical grinding.

上文論述之研磨墊的眾多不同特徵可與其他研磨墊之特徵結合,以產生具有更大功能之研磨墊。例如,一個研磨墊可包括諸如可增壓通道(例如通道451-453)、溫度控制通道(例如通道651-656),及漿料輸送通道(例如通道851-853及875)之特徵。在一些實施例中,一個通道可用於兩個目的。例如,可應用增壓冷卻水以控制一個通道中之壓力及溫度。The many different features of the polishing pad discussed above can be combined with the features of other polishing pads to produce polishing pads with greater functionality. For example, a polishing pad may include features such as pressurizable channels (eg, channels 451-453), temperature control channels (eg, channels 651-656), and slurry delivery channels (eg, channels 851-853 and 875). In some embodiments, one channel can serve two purposes. For example, pressurized cooling water can be used to control the pressure and temperature in a channel.

在一些實施例中,上文論述之設計可經修正以產生更對稱的設計,以在研磨期間當研磨墊被平臺旋轉時提供更佳的力平衡。例如,如第4A圖中圖示之研磨墊450之通道461可徑向延伸向兩個或兩個以上方向,以增壓通道451-453且使得研磨墊450更為對稱。In some embodiments, the design discussed above may be modified to produce a more symmetrical design to provide better force balance when the polishing pad is rotated by the platform during polishing. For example, the channels 461 of the polishing pad 450 as shown in FIG. 4A may extend radially in two or more directions to pressurize the channels 451-453 and make the polishing pad 450 more symmetrical.

儘管研磨墊及研磨墊之眾多特徵(諸如內部通道(例如內部通道351))經描述具有環形幾何形狀,但研磨墊及研磨墊之特徵可採用其他形狀,如多邊形或不規則形狀。例如,研磨墊可具有多邊形形狀,如矩形形狀。作為另一個實例,氣室355、內部通道351,及外部通道352可全部形成於矩形或其他形狀中。作為另一個實例,一些研磨墊之內部通道可採用螺旋形狀。例如,研磨墊550可經重新設計以使得一個通道從研磨墊中心向研磨墊邊緣盤旋,以便加熱或冷卻流體進入中心且圍繞研磨墊邊緣退出。Although many features of the polishing pad and polishing pad (such as internal channels (eg, internal channel 351)) have been described as having a ring-shaped geometry, the characteristics of the polishing pad and polishing pad may take other shapes, such as polygonal or irregular shapes. For example, the polishing pad may have a polygonal shape, such as a rectangular shape. As another example, the air chamber 355, the inner channel 351, and the outer channel 352 may all be formed in a rectangle or other shapes. As another example, the internal channels of some polishing pads may adopt a spiral shape. For example, the polishing pad 550 may be redesigned such that one channel spirals from the center of the polishing pad to the edge of the polishing pad so that heating or cooling fluid enters the center and exits around the edge of the polishing pad.

此外,除上述壓力及溫度感測器之外的其他感測器可安裝在研磨墊中。在一個實施例中,差壓感測器排列可包括在用於液體輸送之研磨墊之一者中,如研磨墊850。可測量共用供應通道861與每一通道851-853之間的差壓。例如,較高的差壓測量結果可指示通道851-853中之該一個通道堵塞或需要清潔。In addition, sensors other than the above-mentioned pressure and temperature sensors may be installed in the polishing pad. In one embodiment, the differential pressure sensor arrangement may be included in one of the polishing pads for liquid delivery, such as polishing pad 850. The differential pressure between the common supply channel 861 and each channel 851-853 can be measured. For example, a higher differential pressure measurement may indicate that one of the channels 851-853 is blocked or needs cleaning.

儘管前述內容係針對本揭示案之實施例,但可在不背離本揭示案之基本範疇之前提下設計本揭示案之其他及更多實施例,且本揭示案之範疇由下文之專利申請範圍決定。Although the foregoing is directed to the embodiments of the present disclosure, other and more embodiments of the design of the present disclosure can be proposed without departing from the basic scope of the present disclosure, and the scope of the present disclosure is covered by the following patent applications Decide.

25‧‧‧控制器 100‧‧‧CMP系統 102‧‧‧研磨頭 104‧‧‧基板 106‧‧‧平臺 110‧‧‧漿料輸送源 150‧‧‧研磨墊 152‧‧‧研磨表面 200‧‧‧研磨裝置 210‧‧‧平臺 211‧‧‧第一導管 212‧‧‧第二導管 214‧‧‧軸 216‧‧‧平臺板 218‧‧‧安裝表面 221‧‧‧開口 222‧‧‧開口 230‧‧‧密封件 232‧‧‧密封表面 241‧‧‧埠 242‧‧‧埠 250‧‧‧研磨墊 251‧‧‧通道 252‧‧‧通道 254‧‧‧支撐表面 257‧‧‧中心 260‧‧‧基底區 260i‧‧‧初始基底層 270‧‧‧研磨區域 271‧‧‧研磨特徵 274‧‧‧研磨表面 277‧‧‧間隙 300‧‧‧研磨裝置 310‧‧‧平臺 311‧‧‧導管 312‧‧‧導管 315‧‧‧導管 330‧‧‧密封件 341‧‧‧埠 342‧‧‧埠 345‧‧‧埠 350‧‧‧研磨墊 351‧‧‧內部通道 352‧‧‧外部通道 355‧‧‧氣室 357‧‧‧中心 361‧‧‧內部通道壓力感測器 362‧‧‧外部通道壓力感測器 365‧‧‧氣室壓力感測器 371‧‧‧內部研磨特徵 372‧‧‧外部研磨特徵 375‧‧‧氣室研磨特徵 380‧‧‧高壓源 381‧‧‧控制閥 382‧‧‧控制閥 385‧‧‧控制閥 450‧‧‧研磨墊 451‧‧‧第一研磨通道 452‧‧‧第二研磨通道 453‧‧‧第三研磨通道 457‧‧‧中心 461‧‧‧供應通道 471‧‧‧可調整的研磨特徵 472‧‧‧固定研磨特徵 481‧‧‧第一研磨表面 482‧‧‧第二研磨表面 500‧‧‧研磨裝置 510‧‧‧平臺 511‧‧‧供應導管 512‧‧‧回流導管 521‧‧‧開口 522‧‧‧開口 530‧‧‧密封件 541‧‧‧供應埠 550‧‧‧研磨墊 551‧‧‧通道 552‧‧‧通道 553‧‧‧通道 554‧‧‧通道 555‧‧‧通道 556‧‧‧通道 557‧‧‧中心 559‧‧‧外環 561‧‧‧供應通道 562‧‧‧回流通道 571‧‧‧研磨特徵 574‧‧‧研磨表面 591‧‧‧阻障層 610‧‧‧平臺 621‧‧‧回流導管 622‧‧‧回流導管 623‧‧‧回流導管 624‧‧‧回流導管 625‧‧‧回流導管 626‧‧‧回流導管 631‧‧‧密封件 632‧‧‧密封件 633‧‧‧密封件 634‧‧‧密封件 635‧‧‧密封件 636‧‧‧密封件 641‧‧‧供應通道 641M‧‧‧主供應通道 650‧‧‧研磨墊 651‧‧‧通道 651P‧‧‧埠 651R‧‧‧回流通道 652‧‧‧通道 652P‧‧‧埠 652R‧‧‧回流通道 653‧‧‧通道 653P‧‧‧埠 653R‧‧‧回流通道 654‧‧‧通道 654P‧‧‧埠 654R‧‧‧回流通道 655‧‧‧通道 655P‧‧‧埠 655R‧‧‧回流通道 656‧‧‧最外側通道 656P‧‧‧埠 656R‧‧‧回流通道 657‧‧‧中心 659‧‧‧外環 661‧‧‧溫度感測器 662‧‧‧溫度感測器 663‧‧‧溫度感測器 664‧‧‧溫度感測器 665‧‧‧溫度感測器 666‧‧‧溫度感測器 671‧‧‧研磨特徵 674‧‧‧研磨表面 680‧‧‧冷卻劑供應 681‧‧‧控制閥 682‧‧‧控制閥 683‧‧‧控制閥 684‧‧‧控制閥 685‧‧‧控制閥 686‧‧‧控制閥 690‧‧‧控制閥 691‧‧‧阻障層 750‧‧‧研磨墊 761‧‧‧供應通道 765‧‧‧氣室 771‧‧‧研磨特徵 774‧‧‧研磨表面 775‧‧‧研磨特徵通道 776‧‧‧孔口 850‧‧‧研磨墊 851‧‧‧第一研磨通道 852‧‧‧第二研磨通道 853‧‧‧第三研磨通道 857‧‧‧中心 861‧‧‧共用供應通道 871‧‧‧第一研磨特徵 872‧‧‧第二研磨特徵 874‧‧‧研磨表面 875‧‧‧研磨特徵通道 876‧‧‧孔口 910‧‧‧研磨特徵 911‧‧‧第一側 912‧‧‧第二側 920‧‧‧研磨特徵 921‧‧‧第一側 922‧‧‧第二側 930‧‧‧研磨特徵 931‧‧‧第一側 932‧‧‧第二側 936‧‧‧第一尺寸 937‧‧‧第二尺寸 940‧‧‧研磨特徵 941‧‧‧第一側 942‧‧‧第二側 1000‧‧‧製程 1002‧‧‧方塊 1004‧‧‧方塊 1006‧‧‧方塊 1008‧‧‧方塊 1010‧‧‧方塊 1210‧‧‧區段 1214‧‧‧分離器 1215‧‧‧氣室 1216‧‧‧供應線路 1218‧‧‧埠 1250‧‧‧研磨墊 1257‧‧‧中心 1261‧‧‧供應通道 1265‧‧‧氣室 1271‧‧‧研磨特徵 1274‧‧‧研磨表面 1276‧‧‧孔口 1281‧‧‧閥 1282‧‧‧閥 1283‧‧‧閥 1284‧‧‧閥25‧‧‧Controller 100‧‧‧CMP system 102‧‧‧Grinding head 104‧‧‧ substrate 106‧‧‧Platform 110‧‧‧Slurry transport source 150‧‧‧Abrasive pad 152‧‧‧Abrasive surface 200‧‧‧Grinding device 210‧‧‧platform 211‧‧‧The first catheter 212‧‧‧Second catheter 214‧‧‧axis 216‧‧‧Platform board 218‧‧‧Installation surface 221‧‧‧ opening 222‧‧‧ opening 230‧‧‧Seal 232‧‧‧Seal surface 241‧‧‧ port 242‧‧‧ port 250‧‧‧Grinding pad 251‧‧‧channel 252‧‧‧channel 254‧‧‧Support surface 257‧‧‧ Center 260‧‧‧Base area 260i‧‧‧Initial base layer 270‧‧‧Abrasive area 271‧‧‧Grinding characteristics 274‧‧‧Abrasive surface 277‧‧‧ gap 300‧‧‧Grinding device 310‧‧‧platform 311‧‧‧Catheter 312‧‧‧Catheter 315‧‧‧Catheter 330‧‧‧Seal 341‧‧‧ port 342‧‧‧ port 345‧‧‧ port 350‧‧‧Grinding pad 351‧‧‧Internal passage 352‧‧‧External channel 355‧‧‧air chamber 357‧‧‧ Center 361‧‧‧Internal channel pressure sensor 362‧‧‧External channel pressure sensor 365‧‧‧Air chamber pressure sensor 371‧‧‧Internal grinding characteristics 372‧‧‧External grinding characteristics 375‧‧‧Air chamber grinding characteristics 380‧‧‧High voltage source 381‧‧‧Control valve 382‧‧‧Control valve 385‧‧‧Control valve 450‧‧‧Abrasive pad 451‧‧‧First grinding channel 452‧‧‧Second grinding channel 453‧‧‧The third grinding channel 457‧‧‧ Center 461‧‧‧Supply channel 471‧‧‧Adjustable grinding characteristics 472‧‧‧Fixed grinding characteristics 481‧‧‧First grinding surface 482‧‧‧Second grinding surface 500‧‧‧Grinding device 510‧‧‧platform 511‧‧‧Supply catheter 512‧‧‧Return catheter 521‧‧‧ opening 522‧‧‧ opening 530‧‧‧Seal 541‧‧‧ Supply port 550‧‧‧Abrasive pad 551‧‧‧channel 552‧‧‧channel 553‧‧‧channel 554‧‧‧channel 555‧‧‧channel 556‧‧‧channel 557‧‧‧ Center 559‧‧‧Outer ring 561‧‧‧Supply channel 562‧‧‧Return channel 571‧‧‧ grinding characteristics 574‧‧‧Abrasive surface 591‧‧‧ barrier layer 610‧‧‧platform 621‧‧‧Return catheter 622‧‧‧Return catheter 623‧‧‧Return catheter 624‧‧‧Return catheter 625‧‧‧Return catheter 626‧‧‧Return catheter 631‧‧‧Seal 632‧‧‧Seal 633‧‧‧Seal 634‧‧‧Seal 635‧‧‧Seal 636‧‧‧Seal 641‧‧‧Supply channel 641M‧‧‧Main supply channel 650‧‧‧Abrasive pad 651‧‧‧channel 651P‧‧‧port 651R‧‧‧Return channel 652‧‧‧channel 652P‧‧‧port 652R‧‧‧Return channel 653‧‧‧channel 653P‧‧‧port 653R‧‧‧Return channel 654‧‧‧channel 654P‧‧‧port 654R‧‧‧Return channel 655‧‧‧channel 655P‧‧‧port 655R‧‧‧Return channel 656‧‧‧ Outermost channel 656P‧‧‧port 656R‧‧‧Return channel 657‧‧‧ Center 659‧‧‧Outer ring 661‧‧‧Temperature sensor 662‧‧‧Temperature sensor 663‧‧‧Temperature sensor 664‧‧‧Temperature sensor 665‧‧‧Temperature sensor 666‧‧‧Temperature sensor 671‧‧‧Grinding characteristics 674‧‧‧Abrasive surface 680‧‧‧Coolant supply 681‧‧‧Control valve 682‧‧‧Control valve 683‧‧‧Control valve 684‧‧‧Control valve 685‧‧‧Control valve 686‧‧‧Control valve 690‧‧‧Control valve 691‧‧‧ barrier layer 750‧‧‧Abrasive pad 761‧‧‧Supply channel 765‧‧‧air chamber 771‧‧‧Grinding characteristics 774‧‧‧Abrasive surface 775‧‧‧Grinding feature channel 776‧‧‧ Orifice 850‧‧‧Abrasive pad 851‧‧‧First grinding channel 852‧‧‧Second grinding channel 853‧‧‧The third grinding channel 857‧‧‧Center 861‧‧‧ shared supply channel 871‧‧‧First grinding feature 872‧‧‧Second grinding characteristics 874‧‧‧Abrasive surface 875‧‧‧Grinding feature channel 876‧‧‧ Orifice 910‧‧‧Grinding characteristics 911‧‧‧ First side 912‧‧‧Second side 920‧‧‧ grinding characteristics 921‧‧‧ First side 922‧‧‧Second side 930‧‧‧Grinding characteristics 931‧‧‧ First side 932‧‧‧Second side 936‧‧‧ First size 937‧‧‧Second size 940‧‧‧Grinding characteristics 941‧‧‧ First side 942‧‧‧Second side 1000‧‧‧Process 1002‧‧‧ block 1004‧‧‧ block 1006‧‧‧ block 1008‧‧‧ block 1010‧‧‧ block 1210‧‧‧ section 1214‧‧‧separator 1215‧‧‧air chamber 1216‧‧‧Supply line 1218‧‧‧ port 1250‧‧‧Abrasive pad 1257‧‧‧ Center 1261‧‧‧Supply channel 1265‧‧‧air chamber 1271‧‧‧Grinding characteristics 1274‧‧‧Abrasive surface 1276‧‧‧ Orifice 1281‧‧‧Valve 1282‧‧‧Valve 1283‧‧‧Valve 1284‧‧‧Valve

為詳細理解本揭示案之上述特徵,可藉由參考實施例對上文中簡短概述之本揭示案進行更特定之描述,該等實施例中之一些實施例在附圖中進行圖示。然而,將注意,附圖僅圖示本揭示案之典型實施例,因此將不被視作限制本揭示案之範疇,因為本揭示案可承認其他同等有效的實施例。In order to understand the above features of the present disclosure in detail, the present disclosure briefly summarized above can be described more specifically by referring to the embodiments, some of which are illustrated in the drawings. However, it will be noted that the drawings only illustrate typical embodiments of the present disclosure, and therefore will not be considered as limiting the scope of the present disclosure, because the present disclosure may recognize other equally effective embodiments.

第1圖是CMP系統之側剖面視圖。Figure 1 is a side cross-sectional view of the CMP system.

第2圖是根據一個實施例之研磨裝置之側剖面視圖。Fig. 2 is a side cross-sectional view of a polishing device according to an embodiment.

第3A圖是根據一個實施例之研磨墊之俯視平面圖。FIG. 3A is a top plan view of a polishing pad according to an embodiment.

第3B圖是第3A圖中研磨墊之側剖面視圖。Figure 3B is a side cross-sectional view of the polishing pad of Figure 3A.

第4A圖是根據一個實施例之研磨墊之俯視平面圖。FIG. 4A is a top plan view of a polishing pad according to an embodiment.

第4B圖是第4A圖中研磨墊之側剖面視圖。Figure 4B is a side cross-sectional view of the polishing pad of Figure 4A.

第5A圖是根據一個實施例之研磨墊之俯視平面圖。FIG. 5A is a top plan view of a polishing pad according to an embodiment.

第5B圖是根據一個實施例之包括第5A圖中研磨墊之研磨裝置的側剖面視圖。FIG. 5B is a side cross-sectional view of a polishing apparatus including the polishing pad of FIG. 5A according to an embodiment.

第6A圖是一俯視平面圖,該圖圖示根據一個實施例的研磨墊之內部通道之佈局。第6B圖是根據一個實施例的包括第6A圖中研磨墊之研磨裝置之部分側剖面視圖。FIG. 6A is a top plan view illustrating the layout of internal channels of the polishing pad according to one embodiment. FIG. 6B is a partial side sectional view of the polishing apparatus including the polishing pad of FIG. 6A according to an embodiment.

第7圖是根據一個實施例之研磨墊之側剖面視圖。Figure 7 is a side cross-sectional view of a polishing pad according to an embodiment.

第8A圖是根據一個實施例之研磨墊之俯視平面圖。Figure 8A is a top plan view of a polishing pad according to an embodiment.

第8B圖是第8A圖中研磨墊之側剖面視圖。Figure 8B is a side cross-sectional view of the polishing pad of Figure 8A.

第9A-9H圖圖示研磨特徵之俯視圖及側視圖,該等研磨特徵可併入研磨墊之不同實施例中。Figures 9A-9H illustrate top and side views of polishing features that can be incorporated into different embodiments of polishing pads.

第10圖是根據一個實施例之製程流程圖。Figure 10 is a process flow diagram according to an embodiment.

第11圖是使用第10圖之製程而形成之示例性研磨墊。Figure 11 is an exemplary polishing pad formed using the process of Figure 10.

第12A圖是根據一個實施例之研磨墊之俯視剖面圖。FIG. 12A is a top cross-sectional view of a polishing pad according to an embodiment.

第12B圖是第12A圖中研磨墊之側剖面視圖。Figure 12B is a side cross-sectional view of the polishing pad of Figure 12A.

為便於理解,在可能之情況下已使用常用字以指定圖式中共有之相同元件。設想在一實施例中揭示之元件可在無需具體詳述之情況下有利地用於其他實施例。For ease of understanding, common words have been used when possible to designate the same elements shared in the drawings. It is envisaged that elements disclosed in one embodiment can be advantageously used in other embodiments without specific details.

國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無Domestic storage information (please note in order of storage institution, date, number) no

國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Overseas hosting information (please note in order of hosting country, institution, date, number) no

200‧‧‧研磨裝置 200‧‧‧Grinding device

210‧‧‧平臺 210‧‧‧platform

212‧‧‧第二導管 212‧‧‧Second catheter

214‧‧‧軸 214‧‧‧axis

216‧‧‧平臺板 216‧‧‧Platform board

218‧‧‧安裝表面 218‧‧‧Installation surface

221‧‧‧開口 221‧‧‧ opening

222‧‧‧開口 222‧‧‧ opening

230‧‧‧密封件 230‧‧‧Seal

241‧‧‧埠 241‧‧‧ port

242‧‧‧埠 242‧‧‧ port

250‧‧‧研磨墊 250‧‧‧Grinding pad

251‧‧‧通道 251‧‧‧channel

252‧‧‧通道 252‧‧‧channel

254‧‧‧支撐表面 254‧‧‧Support surface

257‧‧‧中心 257‧‧‧ Center

260‧‧‧基底區 260‧‧‧Base area

270‧‧‧研磨區域 270‧‧‧Abrasive area

271‧‧‧研磨特徵 271‧‧‧Grinding characteristics

274‧‧‧研磨表面 274‧‧‧Abrasive surface

277‧‧‧間隙 277‧‧‧ gap

Claims (19)

一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料,且其中複數個列印頭的相應列印頭被用以沉積該第一組成材料和該支撐材料的滴液;和從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道。 A method of forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a substrate region of the polishing pad, the step of forming the substrate region includes continuously forming a plurality of substrate layers, wherein the plurality of substrate layers are formed The one or more substrate layers include depositing a first component material, depositing a support material, and curing at least the first component material, and the corresponding print heads of the plurality of print heads are used to deposit the first component material And the drip of the support material; and removing the support material from the abrasive pad to form one or more channels in an inner area thereof. 一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料;和從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道,其中從該研磨墊的該內部區域移除該支撐材料還進一步形成一或多個埠,用於將該一或多個通道流體地耦接到一流體源。 A method of forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a substrate region of the polishing pad, the step of forming the substrate region includes continuously forming a plurality of substrate layers, wherein the plurality of substrate layers are formed The one or more base layers include depositing a first component material, depositing a support material, and curing at least the first component material; and removing the support material from the polishing pad to form one or more in an inner region thereof Channels, wherein the support material is removed from the inner region of the polishing pad to further form one or more ports for fluidly coupling the one or more channels to a fluid source. 如請求項1所述之方法,其中該支撐材料包括一聚合物、一蠟、一水溶性材料、或其中之一組合。 The method of claim 1, wherein the support material comprises a polymer, a wax, a water-soluble material, or a combination thereof. 一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料;從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道;及使用該增添製造系統來形成該基底區上的一研磨區域,形成該研磨區域之步驟包括連續地形成複數個研磨層,其中形成該複數個研磨層中的一或多個研磨層包括沉積一第二組成材料於該第一組成材料上,和固化該第二組成材料。 A method of forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a substrate region of the polishing pad, the step of forming the substrate region includes continuously forming a plurality of substrate layers, wherein the plurality of substrate layers are formed The one or more substrate layers include depositing a first component material, depositing a support material, and curing at least the first component material; removing the support material from the polishing pad to form one or more in an inner region thereof A channel; and using the additive manufacturing system to form a polishing area on the substrate area, the step of forming the polishing area includes continuously forming a plurality of polishing layers, wherein forming one or more polishing layers of the plurality of polishing layers includes Depositing a second component material on the first component material, and curing the second component material. 如請求項4所述之方法,其中該第一組成材料和該第二組成材料是相同的。 The method according to claim 4, wherein the first component material and the second component material are the same. 如請求項4所述之方法,其中該第一組成材料和該第二組成材料是不同的。 The method according to claim 4, wherein the first component material and the second component material are different. 如請求項4所述之方法,其中該第一組成材料和該第二組成材料中的一者或兩者包括丙烯酸酯單體、丙烯酸酯寡聚物、或其中之組合。 The method of claim 4, wherein one or both of the first component material and the second component material include an acrylate monomer, an acrylate oligomer, or a combination thereof. 如請求項4所述之方法,其中形成該研磨區域包括形成複數個研磨特徵,該一或多個通道至少部分地圍繞該研磨墊的一中心延伸,每個通道流體地耦接到一埠,且該複數個研磨特徵中的至少一些研磨特徵包括一研磨特徵通道,該研磨特徵通道將該一或多個通道中的一個通道流體地耦接到穿過該研磨墊的一研磨表面設置的一孔口。 The method of claim 4, wherein forming the polishing region includes forming a plurality of polishing features, the one or more channels extend at least partially around a center of the polishing pad, each channel is fluidly coupled to a port, And at least some of the plurality of grinding features include a grinding feature channel that fluidly couples one of the one or more channels to a channel disposed through a grinding surface of the polishing pad Orifice. 如請求項4所述之方法,其中形成該研磨區域包括形成複數個研磨特徵,該複數個研磨特徵包括固定研磨特徵和可調整的研磨特徵,且其中該等通道中的一或多個通道與該等可調整的研磨特徵中的至少一些可調整的研磨特徵相鄰設置。 The method of claim 4, wherein forming the polishing region includes forming a plurality of polishing features, the plurality of polishing features including a fixed polishing feature and an adjustable polishing feature, and wherein one or more of the channels and At least some of the adjustable abrasive features are adjacently arranged. 如請求項9所述之方法,其中當該研磨墊 設置在一研磨平台上時,該等可調整的研磨特徵形成為回應於該一或多個通道中的壓力變化而移動。 The method according to claim 9, wherein when the polishing pad When placed on a grinding platform, the adjustable grinding features are formed to move in response to pressure changes in the one or more channels. 如請求項10所述之方法,其中當該一或多個通道未增壓時,該等可調整的研磨特徵形成為相對於該等固定研磨特徵而凹陷。 The method of claim 10, wherein when the one or more channels are not pressurized, the adjustable abrasive features are formed to be recessed relative to the fixed abrasive features. 一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料;及從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道,其中從該研磨墊的該內部區域移除該支撐材料還進一步形成一或多個埠,該一或多個埠從該研磨墊的一支撐表面中的一相應開口延伸至該一或多個通道中的相應的一個通道。 A method for forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a base region of the polishing pad, the step of forming the base region includes continuously forming a plurality of base layers, wherein the plurality of base layers are formed The one or more base layers include depositing a first component material, depositing a support material, and curing at least the first component material; and removing the support material from the polishing pad to form one or more in an inner region thereof Channels in which removing the support material from the inner region of the polishing pad further forms one or more ports that extend from a corresponding opening in a support surface of the polishing pad to the one or Corresponding one of the multiple channels. 如請求項12所述之方法,其中該一或多個通道包括複數個通道,每個通道流體地耦接到複數個埠的 一相應埠。 The method of claim 12, wherein the one or more channels include a plurality of channels, each channel is fluidly coupled to a plurality of ports A corresponding port. 一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料;從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道;及使用該增添製造系統來形成該基底區上的一研磨區域,形成該研磨區域之步驟包括連續地形成複數個研磨層,其中形成該複數個研磨層中的一或多個研磨層包括形成複數個第一研磨特徵和複數個第二研磨特徵,且其中用以形成該等第一研磨特徵的一材料組成與用以形成該等第二研磨特徵的一材料組成不同。 A method for forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a base region of the polishing pad, the step of forming the base region includes continuously forming a plurality of base layers, wherein the plurality of base layers are formed The one or more substrate layers include depositing a first component material, depositing a support material, and curing at least the first component material; removing the support material from the polishing pad to form one or more in an inner region thereof A channel; and using the additive manufacturing system to form a polishing region on the substrate region, the step of forming the polishing region includes continuously forming a plurality of polishing layers, wherein forming one or more polishing layers of the plurality of polishing layers includes A plurality of first grinding features and a plurality of second grinding features are formed, and a material composition used to form the first grinding features is different from a material composition used to form the second grinding features. 如請求項14所述之方法,其中該等通道中的一或多個通道與該等第一研磨特徵中的至少一些第一研磨特徵相鄰地設置,使得當對該一或多個通道施加壓力時,該等第一研磨特徵中的至少一些第一研磨特徵將延伸 超過該複數個第二研磨特徵。 The method of claim 14, wherein one or more of the channels are disposed adjacent to at least some of the first abrasive features such that when applied to the one or more channels Under pressure, at least some of the first abrasive features will extend More than this plurality of second grinding features. 如請求項14所述之方法,其中複數個列印頭的相應列印頭用於沉積用以形成相應的該等第一研磨特徵和該等第二研磨特徵的該等材料組成的滴液。 The method of claim 14, wherein the corresponding print heads of the plurality of print heads are used to deposit droplets composed of the materials used to form the corresponding first abrasive features and the second abrasive features. 一種形成一研磨墊的方法,包括以下步驟:使用一增添製造系統來形成該研磨墊的一基底區,形成該基底區之步驟包括連續地形成複數個基底層,其中形成該複數個基底層中的一或多個基底層包括沉積一第一組成材料、沉積一支撐材料,和固化至少該第一組成材料;使用該增添製造系統來形成該基底區上的一研磨區域,形成該研磨區域之步驟包括連續地形成複數個研磨層,其中形成該複數個研磨層中的一或多個研磨層包括沉積一第二組成材料和固化該第二組成材料;和從該研磨墊移除該支撐材料以在其一內部區域中形成一或多個通道。 A method for forming a polishing pad, comprising the steps of: using an additive manufacturing system to form a base region of the polishing pad, the step of forming the base region includes continuously forming a plurality of base layers, wherein the plurality of base layers are formed The one or more substrate layers include depositing a first component material, depositing a support material, and curing at least the first component material; using the additive manufacturing system to form a polishing region on the substrate region, forming the polishing region The steps include continuously forming a plurality of abrasive layers, wherein forming one or more abrasive layers of the plurality of abrasive layers includes depositing a second component material and curing the second component material; and removing the support material from the abrasive pad To form one or more channels in one of its internal regions. 如請求項17所述之方法,其中該第一組成材料和該第二組成材料中的一者或兩者包括丙烯酸酯單 體、丙烯酸酯寡聚物、或其中之組合。 The method of claim 17, wherein one or both of the first component material and the second component material include an acrylate monomer , Acrylate oligomer, or a combination thereof. 如請求項18所述之方法,其中複數個列印頭的相應列印頭被用以沉積該等組成材料和該支撐材料的滴液。 The method according to claim 18, wherein the corresponding print heads of the plurality of print heads are used to deposit the drip of the constituent materials and the support material.
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US14/695,299 US9873180B2 (en) 2014-10-17 2015-04-24 CMP pad construction with composite material properties using additive manufacturing processes
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